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Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering

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Abstract

Metal halide perovskite semiconductors have attracted considerable attention because they enable the development of devices with exceptional optoelectronic and electronic properties via cost-effective and high-throughput chemical solution processes. However, challenges persist in the solution processing of perovskite films, including limited control over crystallization and the formation of defective deposits, leading to suboptimal device performance and reproducibility. Tin (Sn2+) halide perovskite holds promise for achieving high-performance thin-film transistors (TFTs) due to its intrinsic high hole mobility. Nevertheless, reliable production of high-quality Sn2+ perovskite films remains challenging due to the rapid crystallization compared with more extensively studied lead (Pb)-based materials. Recently, composition engineering has emerged as a mature and effective strategy for realizing the high-yield fabrication of Sn2+ halide perovskite thin films. This approach cannot only achieve improved TFT performance with high hole mobilities and current ratios1,2,3,4,5,6, but also enable reliable device operation with hysteresis-free character and long-term stability7,8,9,10,11,12. Here we provide the experimental procedure for precursor preparation, film and device fabrication and characterization. The entire process typically takes 20–24 h. This protocol requires a basic understanding of metal halide perovskites, perovskite film coating process, standard TFT fabrication and measurement techniques.

Key points

  • This protocol offers a comprehensive roadmap for scientists seeking to deposit high-quality tin halide perovskite thin films via chemical solution processes for applications in electronic devices such as thin-film transistors (TFTs) and beyond.

  • Sn2+ halide perovskite TFTs provide state-of-the-art high and reliable performance suitable for real-world applications, offering a reliable platform for studying the intrinsic charge transport properties of diverse perovskites, thereby advancing the understanding of different devices.

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Fig. 1: Typical techniques for the deposition of Sn2+-halide perovskite thin films.
Fig. 2: Halide perovskites for high-performance TFT application.
Fig. 3: Experiment procedures.
Fig. 4: Antisolvent dripping time dependency on film morphology.
Fig. 5: Channel patterns for TFT operations.
Fig. 6: Film Characterizations of 3D FACsSnI3-based perovskite thin films.
Fig. 7: Electrical characterizations of one typical 3D FACsSnI3-based TFT.

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Data availability

The authors declare that the data supporting the findings of this study are available within the paper. Should any raw data files be needed in another format, they are available from the corresponding author upon reasonable request.

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Acknowledgements

This study was supported by the Ministry of Science and ICT through the National Research Foundation, funded by the Korean government (2021R1A2C3005401 & RS-2023-00260608). This work was also supported by the National Natural Science Foundation of China (62474029).

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Author notes

  1. These authors contributed equally: Huihui Zhu, Youjin Reo.

Authors and Affiliations

  1. Institute of Fundamental and Frontier Sciences, School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, Key Laboratory of Quantum Physics and Photonic Quantum Information of the Ministry of Education, University of Electronic Science and Technology of China, Chengdu, China

    Huihui Zhu & Ao Liu

  2. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea

    Youjin Reo, Geonwoong Park, Wonryeol Yang & Yong-Young Noh

Authors
  1. Huihui Zhu
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  4. Wonryeol Yang
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  5. Ao Liu
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Contributions

H.Z., A.L., Y.R. and Y.-Y.N. conceived the project and all authors contributed to the manuscript writing. Y.-Y.N. and A.L. supervised the project.

Corresponding authors

Correspondence to Huihui Zhu, Ao Liu or Yong-Young Noh.

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Key references

Park , G. et al. Mater. Sci. Eng. R Rep. 159, 100806 (2024): https://doi.org/10.1016/j.mser.2024.100806

Zhu, H. et al. Nat. Electron. 6, 650–657 (2023): https://doi.org/10.1038/s41928-023-01019-6

Zhu, H. et al. Nat. Commun. 13, 1741 (2022): https://doi.org/10.1038/s41467-022-29434-x

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Zhu, H., Reo, Y., Park, G. et al. Fabrication of high-performance tin halide perovskite thin-film transistors via chemical solution-based composition engineering. Nat Protoc (2025). https://doi.org/10.1038/s41596-024-01101-z

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