The incorporated Mn forms a shallow acceptor level, and the GaN becomes a p-type semiconductor.例文帳に追加

Ｍｎが浅いアクセプタレベルを形成し、ＧａＮがｐ型を示す。 - 特許庁

The field effect transistor includes: a first impurity introduction region 110 which is formed on a first barrier layer 102 and is introduced with an impurity that is an shallow acceptor with respect to AlGaSb; and a second impurity introduction region 111 which is formed on a second barrier layer 104 and is introduced with an impurity that is an shallow acceptor with respect to AlGaSb.例文帳に追加

第１障壁層１０２に形成されてＡｌＧａＳｂに対して浅いアクセプタとなる不純物が導入された第１不純物導入領域１１０と、第２障壁層１０４に形成されてＡｌＧａＳｂに対して浅いアクセプタとなる不純物が導入された第２不純物導入領域１１１とを備える。 - 特許庁