Papers by Marco Mastrapasqua
Nuclear Instruments and …, 1991
... The device is operated biased above the breakdown voltage in the socalled Geiger mode, The ab... more ... The device is operated biased above the breakdown voltage in the socalled Geiger mode, The absorption of a single photon results in a mArange avalanche pulse. ... London, 1983). [81 S. Cova, A. Lacaita, M. Ghioni, G Ripamonti and TA Louis, Rev. Sci. lnstrum. 60 (1989) 1104. ...
devices logic light-emitting novel of implementation the and principle the discuss We conducting ... more devices logic light-emitting novel of implementation the and principle the discuss We conducting complementary between electrons hot of (RST) transfer real-space the on based doped is emitter, the layers, these of One layers. n for contacts more or two has and -type a into injected are electrons field, this by Heated field. electric lateral the applying complementary p is current injection The independently. contacted layer, collector -type transferred the of recombination the from arising signal luminescence a by accompanied region. active collector designed specially a in electrons functional implement to one enables RST by injection charge of symmetry peculiar The the in gate OR exclusive an as acts contacts emitter two with structure simplest The gates. logic The voltages. input the on light output the and current collector the both of dependence electrically is functions such performs device multiterminal at demonstrated are operations logic powerful These functions. these betw...
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001
We present a characterization of self-heating in a 0.25 μm SiGe BiCMOS technology on bulk and SOI... more We present a characterization of self-heating in a 0.25 μm SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed
IEEE Electron Device Letters, 1994
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000
The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufact... more The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 μm COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 μm gate length, and up
Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000
A Low-Cost Modular SiGe BiCMOS Technology and Analog Passives for High-Performance RF and Wide-Ba... more A Low-Cost Modular SiGe BiCMOS Technology and Analog Passives for High-Performance RF and Wide-Band Applications ... R. Tang, C. Leung, D. Nguyen, T. Hsu, , L. Fritzinger, S. Molloy, T. Esry, T. Ivanov, J. Chu, M. Carroll, J. Huang, W. Moller, T. Campbell, W. ...
IEEE Transactions on Electron Devices, 1996
A charge injection transistor, which operates as an exclusive-OR logic gate, and a monolithic mul... more A charge injection transistor, which operates as an exclusive-OR logic gate, and a monolithic multiterminal device, electrically reprogrammable between OR and NAND logic function, have been successfully implemented in a Si/Sio 7Geo 3 heterostructure grown by rapid thermal epitaxy on a Si substrate. Room temperature operation of the charge injection transistor is demonstrated, with 10 dB odoff ratio for the excluAive-OR logic function. Microwave measurements indicate a short circuit current gain cutoff of 6 GHz, for a device with a source-drain distance of 0.5 wm. Device simulations were used to identify primary dependencies of the device performance on the parameters used in the design of the structure. Further structural improvements are suggested. Marco Mastrapasqua (M'91) received the Doctor of Nuclear Engineering degree (summa cum laude
IEEE Microwave Magazine, 2002
Ndt & E International, 1994
We report a detailed experimental analysis of both electron and hole Real Space Transfer occurrin... more We report a detailed experimental analysis of both electron and hole Real Space Transfer occurring in InAlAs/InGaAs heterostructure devices grown on InP. At high drain-source voltages electrons are heated and holes are created by impact ionization. Both electrons and holes contribute to the gate current whereas the relative size of these contribution depends on the magnitude and polarity of the
IEEE MTT-S International Microwave Symposium Digest, 2003
ABSTRACT Silicon RF LDMOSFET technology is demonstrated with excellent RF performance. It achieve... more ABSTRACT Silicon RF LDMOSFET technology is demonstrated with excellent RF performance. It achieves high power gain of 14.5dB with a high power of 130W at 2.1GHz. Its high efficiency and high linearity makes it highly desired for base station applications. 2mil substrate enables the best-in-class of thermal stability. Low HCI effect, integrated ESD and gold metal ensure high long-term reliability.
Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
ABSTRACT It is experimentally demonstrated that hot carrier degradation in high voltage LDMOS dev... more ABSTRACT It is experimentally demonstrated that hot carrier degradation in high voltage LDMOS devices can be minimized by adding a dummy gate field plate, DGFP, over the drain drift region close to the gate. The level of on resistance increase due to hot carrier stress can be controlled by design with the amount of the DGFP overlap of the drift region. Significant decrease in the degradation is experimentally observed by a 40% DGFP overlap without substantially affecting the breakdown voltage of the device. It was also demonstrated that the initial peak substrate/body current is a good indicator of the hot carrier degradation effect and can be used as a process monitor.
Proceedings of 1994 VLSI Technology Symposium
The impact ionization (II) current of p-channel MOSFETs designed for 0.1 μm operation has been in... more The impact ionization (II) current of p-channel MOSFETs designed for 0.1 μm operation has been investigated as a function of temperature and channel length, Lch down to 0.1 μm. It has been experimentally observed that at any channel length, the substrate current to source current ratio, IR, decreases with decreasing lattice temperature. The temperature behavior of the II multiplication measured
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Papers by Marco Mastrapasqua