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    UTC 2SD1616/A NPN Epitaxial Silicon Transistor

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    nishatiwari82
    This document provides specifications for the UTC 2SD1616/A NPN epitaxial silicon transistor. It lists the transistor's absolute maximum ratings, characteristics such as current gain and saturation voltages, and classification of DC current gain. The transistor is intended for use in audio frequency power amplification and medium speed switching. It has a DC current rating of 1A, storage temperature range of -55°C to +150°C, and comes in a standard TO-92 package. Key electrical characteristics include a current gain of 135-600, turn on and fall times of less than 0.1 microseconds, and an fT of 100-160 MHz.

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    © All Rights Reserved
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    UTC 2SD1616/A NPN Epitaxial Silicon Transistor

    Uploaded by

    nishatiwari82
    105 views4 pages
    This document provides specifications for the UTC 2SD1616/A NPN epitaxial silicon transistor. It lists the transistor's absolute maximum ratings, characteristics such as current gain and saturation voltages, and classification of DC current gain. The transistor is intended for use in audio frequency power amplification and medium speed switching. It has a DC current rating of 1A, storage temperature range of -55°C to +150°C, and comes in a standard TO-92 package. Key electrical characteristics include a current gain of 135-600, turn on and fall times of less than 0.1 microseconds, and an fT of 100-160 MHz.

    Original Description:

    datasheet

    Original Title

    2SD1616A

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    This document provides specifications for the UTC 2SD1616/A NPN epitaxial silicon transistor. It lists the transistor's absolute maximum ratings, characteristics such as current gain and saturation voltages, and classification of DC current gain. The transistor is intended for use in audio frequency power amplification and medium speed switching. It has a DC current rating of 1A, storage temperature range of -55°C to +150°C, and comes in a standard TO-92 package. Key electrical characteristics include a current gain of 135-600, turn on and fall times of less than 0.1 microseconds, and an fT of 100-160 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    105 views4 pages

    UTC 2SD1616/A NPN Epitaxial Silicon Transistor

    Uploaded by

    nishatiwari82
    This document provides specifications for the UTC 2SD1616/A NPN epitaxial silicon transistor. It lists the transistor's absolute maximum ratings, characteristics such as current gain and saturation voltages, and classification of DC current gain. The transistor is intended for use in audio frequency power amplification and medium speed switching. It has a DC current rating of 1A, storage temperature range of -55°C to +150°C, and comes in a standard TO-92 package. Key electrical characteristics include a current gain of 135-600, turn on and fall times of less than 0.1 microseconds, and an fT of 100-160 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR

    UTC UNISONIC TECHNOLOGIES CO., LTD.


    1

    QW-R201-008,A
    NPN EPITAXIAL SILICON
    TRANSISTOR
    DESCRIPTION
    *Audio frequency power amplifier
    *Medium speed switching



    TO-92
    1

    1: EMITTER 2: COLLECTOR 3: BASE


    ABSOLUTE MAXIMUM RATINGS
    PARAMETER SYMBOL VALUE UNIT
    Storage Temperature Tstg -55 ~+150 C
    Junction Temperature Tj 150 C
    Total Power Dissipation (Ta=25C) Pc 750 mW
    Collector to Base Voltage: D1616
    D1616A
    VCBO 60
    120
    V
    Collector to Emitter Voltage: D1616
    D1616A
    VCEO 50
    60
    V
    Emitter to Base Voltage VEBO 6 V
    Collector Current (DC) Ic 1 A
    Collector Current (*Pulse) Ic 2 A
    Note: (*) Pulse width10ms, Duty cycle<50%

    CHARACTERISTICS (Ta=25C)
    CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
    Collector Cut-Off Current ICBO VCB=60V 100 nA
    Emitter Cut-Off Current IEBO VEB= 6V 100 nA
    Collector-Emitter Saturation Voltage VCE(SAT) IC=1A, IB=50mA 0.15 0.3 V
    Base-Emitter Saturation Voltage VBE(SAT) IC=1A, IB=50mA 0.9 1.2 V
    Base Emitter On Voltage VBE(ON) VCE=2V, IC=50mA 600 640 700 mV
    DC Current Gain: D1616
    D1616A
    hFE1 VCE=2V, IC=100mA 135
    135
    600
    400

    hFE2 VCE=2V, IC=1A 81
    Current Gain Bandwidth Product fT VCE=2V, IC=100mA 100 160 MHz
    Output Capacitance Cob VCB=10V, f=1MHz 19 pF
    Turn On Time ton VCE=10V, IC=100mA 0.07 us
    UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR
    UTC UNISONIC TECHNOLOGIES CO., LTD.
    2

    QW-R201-008,A
    CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
    Storage Time ts IB1=-IB2=10mA 0.95 us
    Fall Time tf VBE(off)=-2!-3V 0.07 us

    Classification of h
    FE1

    RANK Y G L
    hFE1 135-270 200-400 300-600

    UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR
    UTC UNISONIC TECHNOLOGIES CO., LTD.
    3

    QW-R201-008,A

    This datasheet has been download from:
    www.datasheetcatalog.com
    Datasheets for electronics components.

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