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    Nr10205-Semiconductor Devices & Circuits

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    SRINIVASA RAO GANTA
    The document contains four sets of questions for an examination on Semiconductor Devices and Circuits. Each set contains 8 questions with part (a) and part (b) worth 8 marks each, and two questions worth 16 marks. The questions cover topics such as BJT amplifiers, FET operation, feedback amplifiers, oscillators, diode characteristics, and transistor modeling. The exam is for undergraduate students of engineering programs such as electrical engineering and aims to test their understanding of fundamental semiconductor devices and circuits.

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    Nr10205-Semiconductor Devices & Circuits

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    SRINIVASA RAO GANTA
    29 views4 pages
    The document contains four sets of questions for an examination on Semiconductor Devices and Circuits. Each set contains 8 questions with part (a) and part (b) worth 8 marks each, and two questions worth 16 marks. The questions cover topics such as BJT amplifiers, FET operation, feedback amplifiers, oscillators, diode characteristics, and transistor modeling. The exam is for undergraduate students of engineering programs such as electrical engineering and aims to test their understanding of fundamental semiconductor devices and circuits.

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    The document contains four sets of questions for an examination on Semiconductor Devices and Circuits. Each set contains 8 questions with part (a) and part (b) worth 8 marks each, and two questions worth 16 marks. The questions cover topics such as BJT amplifiers, FET operation, feedback amplifiers, oscillators, diode characteristics, and transistor modeling. The exam is for undergraduate students of engineering programs such as electrical engineering and aims to test their understanding of fundamental semiconductor devices and circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views4 pages

    Nr10205-Semiconductor Devices & Circuits

    Uploaded by

    SRINIVASA RAO GANTA
    The document contains four sets of questions for an examination on Semiconductor Devices and Circuits. Each set contains 8 questions with part (a) and part (b) worth 8 marks each, and two questions worth 16 marks. The questions cover topics such as BJT amplifiers, FET operation, feedback amplifiers, oscillators, diode characteristics, and transistor modeling. The exam is for undergraduate students of engineering programs such as electrical engineering and aims to test their understanding of fundamental semiconductor devices and circuits.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    Code.

    No: 11106
    NR SET-1
    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
    I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
    SEMICONDUCTOR DEVICES AND CIRCUITS
    (Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
    Time: 3hours Max.Marks:80
    Answer any FIVE questions
    All questions carry equal marks
    ---

    1.a) Define current density. Derive an expression for current density.


    b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

    2.a) How does doping modify the conductivity of semiconductor?


    b) Explain the forward bias condition of a p-n junction diode and give its current equation.
    [8+8]

    3.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.


    b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

    4.a) Derive an expression for the stability factor S of a BJT amplifier.


    b) A transistor connected in CE configuration has the following h-parameter,
    hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
    AI , Ri and AV of the amplifier. [8+8]

    5.a) What are the general characteristics of a negative feedback amplifier? Explain how
    feedback amplifiers are classified.
    b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
    [8+8]

    6. Explain the functioning of a complementary Push Pull amplifier and derive the
    expression for efficiency and power output for the same. [16]

    7.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
    off frequencies.
    b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
    frequency of oscillations. [8+8]

    8. Write a brief note on


    a) Grain band width product.
    b) UJT V-I characteristics. [16]

    --o0o--
    Code.No: 11106
    NR SET-2
    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
    I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
    SEMICONDUCTOR DEVICES AND CIRCUITS
    (Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
    Time: 3hours Max.Marks:80
    Answer any FIVE questions
    All questions carry equal marks
    ---

    1.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.


    b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

    2.a) Derive an expression for the stability factor S of a BJT amplifier.


    b) A transistor connected in CE configuration has the following h-parameter,
    hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
    AI , Ri and AV of the amplifier. [8+8]

    3.a) What are the general characteristics of a negative feedback amplifier? Explain how
    feedback amplifiers are classified.
    b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
    [8+8]

    4. Explain the functioning of a complementary Push Pull amplifier and derive the
    expression for efficiency and power output for the same. [16]

    5.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
    off frequencies.
    b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
    frequency of oscillations. [8+8]

    6. Write a brief note on


    a) Grain band width product.
    b) UJT V-I characteristics. [16]

    7.a) Define current density. Derive an expression for current density.


    b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

    8.a) How does doping modify the conductivity of semiconductor?


    b) Explain the forward bias condition of a p-n junction diode and give its current equation.
    [8+8]

    --o0o--
    Code.No: 11106
    NR SET-3
    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
    I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
    SEMICONDUCTOR DEVICES AND CIRCUITS
    (Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
    Time: 3hours Max.Marks:80
    Answer any FIVE questions
    All questions carry equal marks
    ---

    1.a) What are the general characteristics of a negative feedback amplifier? Explain how
    feedback amplifiers are classified.
    b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
    [8+8]

    2. Explain the functioning of a complementary Push Pull amplifier and derive the
    expression for efficiency and power output for the same. [16]

    3.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
    off frequencies.
    b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
    frequency of oscillations. [8+8]

    4. Write a brief note on


    a) Grain band width product.
    b) UJT V-I characteristics. [16]

    5.a) Define current density. Derive an expression for current density.


    b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

    6.a) How does doping modify the conductivity of semiconductor?


    b) Explain the forward bias condition of a p-n junction diode and give its current equation.
    [8+8]

    7.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.


    b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

    8.a) Derive an expression for the stability factor S of a BJT amplifier.


    b) A transistor connected in CE configuration has the following h-parameter,
    hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
    AI , Ri and AV of the amplifier. [8+8]

    --o0o--
    Code.No: 11106
    NR SET-4
    JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
    I .B.TECH – SUPPLEMENTARY EXAMINATIONS JANUARY- 2010
    SEMICONDUCTOR DEVICES AND CIRCUITS
    (Common to EEE, ECE, CSE, CSIT, EIE, BME, E.CON.E, ETM, ECC, CSS)
    Time: 3hours Max.Marks:80
    Answer any FIVE questions
    All questions carry equal marks
    ---

    1.a) Draw a neat high frequency model of transistor and drive the expression for α and β cut
    off frequencies.
    b) Draw the equivalent circuit model of crystal oscillator and derive the expression for
    frequency of oscillations. [8+8]

    2. Write a brief note on


    a) Grain band width product.
    b) UJT V-I characteristics. [16]

    3.a) Define current density. Derive an expression for current density.


    b) Prove that the motion of an electron in 2-D is parabolic. [8+8]

    4.a) How does doping modify the conductivity of semiconductor?


    b) Explain the forward bias condition of a p-n junction diode and give its current equation.
    [8+8]

    5.a) Give β dc = 180 and I c = 2mA , find I E , I B andα dc of the BJT.


    b) With the help of a neat structure of a p-channel FET, explain the operation of it. [8+8]

    6.a) Derive an expression for the stability factor S of a BJT amplifier.


    b) A transistor connected in CE configuration has the following h-parameter,
    hie = 1.1k Ω, hre = 2.5 ×10−4 , hfe = 50, hoe = 25µ siemens and RS = RL = 1k Ω . Calculate
    AI , Ri and AV of the amplifier. [8+8]

    7.a) What are the general characteristics of a negative feedback amplifier? Explain how
    feedback amplifiers are classified.
    b) With the help of neat circuit diagram explain the operation of an LC type oscillator.
    [8+8]

    8. Explain the functioning of a complementary Push Pull amplifier and derive the
    expression for efficiency and power output for the same. [16]

    --o0o--

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