GENERAL PURPOSE

NE76100
GaAs MESFET

FEATURES NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY
• LOW NOISE FIGURE: VDS = 3 V, IDS = 10 mA
4 24
NF = 0.8 dB typical at f = 4 GHz

Optimum Noise Figure, NFOPT (dB)

• HIGH ASSOCIATED GAIN: 3.5 21

GA = 12.0 dB typical at f = 4 GHz

Associated Gain, GA (dB)

3 18
Ga
• LG = 1.0 µm, WG = 400 µm
2.5 15

2 12
DESCRIPTION
1.5 9
NE76100 is a high performance gallium arsenide metal semi-
1 6
conductor field effect transistor chip. Its low noise figure makes NF
this device appropriate for use in the second or third stages of 0.5 3
low noise amplifiers operating in the 1-12 GHz frequency
0 0
range. The device is fabricated using ion implantation for
1 10 20
improved RF and DC performance, reliability, and uniformity.
The NE76100 is suitable for a wide variety of commercial and Frequency, f (GHz)
industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE76100
PACKAGE OUTLINE 00 (CHIP)
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
1
NFOPT Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz dB 0.8 1.4
GA1 Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz dB 12.0
P1dB Output Power at 1 dB Gain Compression Point, f = 4 GHz
VDS = 3 V, IDS = 10 mA dBm 12.5
VDS = 3 V, IDS = 30 mA dBm 15.0
G1dB Gain at P1dB, f = 4 GHz
VDS = 3 V, IDS = 10 mA dB 11.5
VDS = 3 V, IDS = 30 mA dB 13.5
IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 mA 30 60 100
VP Pinch Off Voltage at VDS = 3 V, ID = 100 mA V -3.0 -1.1 -0.5
gm Transconductance at VDS = 3 V, ID = 10 mA mS 20 45
IGSO Gate to Source Leak Current at VGS = -5 V µA 1.0 10
RTH2 Thermal Resistance °C/W 190
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects
for 10 samples.
2. Chip mounted on an infinite heat sink.

California Eastern Laboratories

NE76100

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA
SYMBOLS PARAMETERS UNITS RATINGS
FREQ. NFOPT GA ΓOPT
VDS Drain to Source Voltage V 5
(GHz) (dB) (dB) MAG ANG Rn/50
VGD Gate to Drain Voltage V -6 1.0 0.55 18.0 0.90 16 0.50
VGS Gate to Source Voltage V -5 2.0 0.60 15.0 0.82 34 0.48
4.0 0.80 12.0 0.70 65 0.45
IDS Drain Current mA IDSS
6.0 1.15 10.0 0.60 95 0.39
TCH Channel Temperature °C 175
8.0 1.60 8.5 0.52 122 0.38
TSTG Storage Temperature °C -65 to +175 10.0 2.10 7.5 0.50 150 0.32
PT2 Total Power Dissipation mW 350 12.0 2.60 7.0 0.50 171 0.27

Notes: Includes effects from wirebonds. See S-Parameter data for details.
1. Operation in excess of anyone of these parameters may result in
permanent damage.
2. Mounted on an infinite heat sink.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NOISE FIGURE AND ASSOCIATED
TOTAL POWER DISSIPATION vs. GAIN vs. DRAIN CURRENT
AMBIENT TEMPERATURE VDS = 3 V, f = 4 GHz
400 2.5 15
Total Power Dissipation, PT (mW)

350 GA 14

Associated Gain, GA (dB)

300 2
Noise Figure, NF (dB)
13
Infinite
250 Heat sink 12

200 1.5 11
NF
150 10

100 1 9

50 8

0 0.5 7
0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60

Ambient Temperature, TA (°C) Drain Current, IDS (mA)

DRAIN CURRENT vs. TRANSCONDUCTANCE vs.

DRAIN TO SOURCE VOLTAGE DRAIN CURRENT VDS = 3 V

100 75
Transconductance, gm (mS)
Drain Current, IDS (mA)

80 60
VGS

0
60 45

-0.2

40 30
-0.4

20 -0.6 15

-0.8
0 -1.0 0
0 1 2 3 4 5
0 20 40 60 80 100

Drain to Source Voltage, VDS (V) Drain Current, IDS (mA)

 NE76100

TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)

j50 +90˚
+120˚ +60˚
j25 j100
S11
20 GHz
+150˚ +30˚
j10

S11 S12 S21

S12
10 25 50 100 .1 GHz S22 .1 GHz .1 GHz
0 +180
– ˚ 20 GHz 0˚
.1 GHz S21
1
20 GHz
S22
2
-j10 20 GHz
-150˚ 3 -30˚

4
-j25 -j100
-120˚ 5 -60˚

-j50 -90˚

VDS = 3 V, lDS = 10 mA
FREQUENCY S11 S21 S12 S22 K S21 MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) (dB)

0.1 0.99 -2.3 3.782 178.2 0.004 86.7 0.769 -1.2 0.052 11.6 30.1
0.2 0.999 -4.5 3.779 176.3 0.007 86.4 0.769 -2.3 0.037 11.5 27.1
0.5 0.996 -11.3 3.763 170.9 0.018 83.1 0.767 -5.7 0.045 11.5 23.1
1.0 0.986 -22.5 3.707 161.9 0.036 76.9 0.759 -11.4 0.076 11.2 18.4
1.5 0.971 -33.3 3.619 153.1 0.053 70.8 0.747 16.8 0.110 11.4 20.1
2.0 0.951 -43.9 3.505 144.7 0.068 65.0 0.731 -22.0 0.145 10.9 17.1
3.0 0.905 -63.6 3.233 128.9 0.093 54.5 0.694 -31.5 0.214 10.2 15.4
4.0 0.859 -81.4 2.941 114.6 0.112 45.5 0.657 -39.7 0.281 9.4 14.2
5.0 0.818 -97.3 2.662 101.9 0.126 37.9 0.624 -46.8 0.347 8.5 13.3
6.0 0.784 -111.4 2.411 90.3 0.135 31.5 0.598 -53.1 0.410 7.6 12.5
7.0 0.759 -124.2 2.190 79.8 0.141 26.1 0.577 -58.9 0.470 6.8 11.9
8.0 0.739 -135.6 1.999 70.1 0.145 21.6 0.562 -64.2 0.526 6.0 11.4
9.0 0.726 -146.0 1.833 61.1 0.148 17.7 0.552 -69.3 0.578 5.3 10.9
10.0 0.718 -155.4 1.688 52.7 0.149 14.3 0.547 -74.2 0.626 4.5 10.5
11.0 0.713 -164.0 1.562 44.7 0.149 11.4 0.545 -79.0 0.669 3.9 10.2
12.0 0.711 -172.0 1.449 37.2 0.149 8.8 0.545 -83.7 0.708 3.2 9.9
13.0 0.712 -179.3 1.349 29.9 0.148 6.7 0.548 -88.3 0.741 2.6 9.6
14.0 0.715 173.9 1.259 23.0 0.147 4.8 0.554 -92.9 0.770 2.0 9.3
15.0 0.719 167.5 1.177 16.4 0.146 3.2 0.561 -97.5 0.793 1.4 9.1
16.0 0.725 161.6 1.102 10.0 0.144 1.8 0.569 -102.1 0.811 0.8 8.8
17.0 0.732 156.1 1.033 3.8 0.142 0.7 0.579 -106.7 0.824 0.3 8.6
18.0 0.739 150.9 0.968 -2.1 0.141 -0.2 0.589 -111.2 0.831 -0.3 8.4
19.0 0.747 146.0 0.908 -7.8 0.139 -0.9 0.601 -115.7 0.833 -0.8 8.1
20.0 0.755 141.4 0.851 -13.4 0.138 -1.5 0.613 -120.1 0.830 -1.4 7.9

Note:
1. Gain Calculations:

, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12

|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

2. S-parameters include bond wires as follows:

GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE: 0.0007" (17.8 µm) DIA. GOLD.
NE76100

TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)

j50 +90˚
j100 +120˚ +60˚
j25
S11
20 GHz
+150˚ +30˚
j10

S11 S12 S21

10 25 50 100 .1 GHz S22 S12
0 .1 GHz .1 GHz
.1 GHz
+180
– ˚ 20 GHz 0˚
S21
1
20 GHz
S22
20 GHz 2
-j10
-150˚ 3 -30˚

4
-j25 -j100
-120˚ 5 -60˚
-j50 -90˚

VDS = 3 V, lDS = 20 mA
FREQUENCY S11 S21 S12 S22 K S21 MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) (dB)
0.1 0.999 -2.5 4.692 178.0 0.003 86.5 0.713 -1.2 0.053 13.4 31.4
0.2 0.999 -5.1 4.668 176.1 0.007 86.2 0.712 -2.5 0.038 13.4 28.4
0.5 0.995 -12.7 4.662 170.3 0.017 82.7 0.710 -6.2 0.047 13.4 24.4
1.0 0.983 -25.2 4.572 160.7 0.033 76.2 0.701 -12.2 0.081 13.2 21.4
1.5 0.965 -37.3 4.435 151.5 0.048 69.8 0.686 -17.9 0.117 12.9 19.7
2.0 0.943 -48.8 4.261 142.6 0.061 63.8 0.669 -23.3 0.154 12.6 18.4
3.0 0.893 -70.1 3.860 126.5 0.083 53.3 0.629 -33.0 0.227 11.7 16.7
4.0 0.845 -88.8 3.451 112.3 0.098 44.7 0.592 -41.1 0.299 10.8 15.4
5.0 0.805 -105.2 3.078 99.7 0.109 37.8 0.560 -48.0 0.368 9.8 14.5
6.0 0.774 -119.5 2.754 88.6 0.117 32.2 0.536 -54.1 0.434 8.8 13.7
7.0 0.752 -132.1 2.477 78.5 0.122 27.7 0.519 -59.6 0.496 7.9 13.1
8.0 0.736 -143.3 2.242 69.2 0.125 23.9 0.507 -64.8 0.554 7.0 12.5
9.0 0.726 -153.3 2.042 60.6 0.127 20.8 0.500 -69.8 0.606 6.2 12.0
10.0 0.720 -162.3 1.870 52.5 0.129 18.2 0.497 -74.7 0.654 5.4 11.6
11.0 0.717 -170.6 1.722 44.9 0.130 16.1 0.497 -79.4 0.696 4.7 11.2
12.0 0.717 -178.1 1.592 37.7 0.131 14.2 0.500 -84.2 0.732 4.0 10.9
13.0 0.719 174.9 1.477 30.7 0.131 12.7 0.505 -88.8 0.762 3.4 10.5
14.0 0.722 168.5 1.374 24.1 0.131 11.4 0.511 -93.5 0.787 2.8 10.2
15.0 0.727 162.5 1.282 17.7 0.131 10.3 0.519 -98.1 0.805 2.2 9.9
16.0 0.733 156.9 1.197 11.5 0.131 9.4 0.529 -102.7 0.816 1.6 9.6
17.0 0.739 151.6 1.120 5.6 0.131 8.6 0.539 -107.2 0.823 1.0 9.3
18.0 0.746 146.7 1.049 -0.2 0.131 7.9 0.551 -111.7 0.823 0.4 9.0
19.0 0.754 142.1 0.983 -5.7 0.132 7.4 0.563 -116.2 0.818 -0.1 8.7
20.0 0.761 137.7 0.921 -11.1 0.132 6.9 0.575 -120.6 0.808 -0.7 8.4

Note:
1. Gain Calculations:

, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12

|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

2. S-parameters include bond wires as follows:

GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE: 0.0007" (17.8 µm) DIA. GOLD.
 NE76100

TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)

j50 +90˚
+120˚ +60˚
j25 j100
S11
20 GHz
+150˚ +30˚
j10

S11 S12 S21

.1 GHz S12
10 25 50 100 S22 .1 GHz .1 GHz
0 +180
– ˚ 20 GHz 0˚
.1 GHz
S21
1
20 GHz
S22
20 GHz 2
-j10
-150˚ 3 -30˚

4
-j25 -j100
-120˚ 5 -60˚
-j50 -90˚

VDS = 3 V, lDS = 30 mA
FREQUENCY S11 S21 S12 S22 K S21 MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) (dB)

0.1 0.999 -2.7 5.142 178.0 0.003 86.5 0.694 -1.3 0.054 14.2 32.0
0.2 0.999 -5.4 5.137 176.0 0.006 86.1 0.693 -2.5 0.039 14.2 29.0
0.5 0.995 -13.4 5.104 169.9 0.016 82.5 0.690 -6.3 0.049 14.2 25.0
1.0 0.982 -26.6 4.995 160.1 0.031 75.7 0.680 -12.5 0.083 14.0 22.0
1.5 0.963 -39.3 4.827 150.6 0.045 69.2 0.665 -18.3 0.120 13.7 20.3
2.0 0.939 -51.4 4.619 141.5 0.058 63.2 0.647 -23.7 0.158 13.3 19.0
3.0 0.887 -73.4 4.146 125.2 0.078 52.7 0.606 -33.3 0.233 12.4 17.3
4.0 0.840 -92.5 3.676 111.0 0.092 44.4 0.569 -41.2 0.307 11.3 16.0
5.0 0.802 -109.0 3.256 98.6 0.102 37.8 0.538 -48.0 0.378 10.3 15.1
6.0 0.773 -123.3 2.896 87.6 0.108 32.6 0.516 -53.9 0.445 9.2 14.3
7.0 0.752 -135.8 2.594 77.6 0.113 28.5 0.500 -59.4 0.508 8.3 13.6
8.0 0.738 -146.8 2.340 68.6 0.116 25.1 0.490 -64.5 0.565 7.4 13.1
9.0 0.730 -156.6 2.125 60.1 0.118 22.4 0.485 -69.5 0.618 6.5 12.6
10.0 0.725 -165.5 1.941 52.2 0.120 20.2 0.483 -74.3 0.664 5.8 12.1
11.0 0.723 -173.5 1.783 44.7 0.121 18.4 0.484 -79.1 0.705 5.0 11.7
12.0 0.723 179.1 1.646 37.6 0.122 16.8 0.487 -83.8 0.739 4.3 11.3
13.0 0.726 172.4 1.524 30.8 0.123 15.6 0.493 -88.5 0.766 3.7 10.9
14.0 0.730 166.1 1.417 24.3 0.124 14.5 0.500 -93.2 0.787 3.0 10.6
15.0 0.735 160.3 1.320 18.0 0.124 13.6 0.508 -97.8 0.802 2.4 10.3
16.0 0.740 154.8 1.232 11.9 0.125 12.9 0.518 -102.5 0.810 1.8 9.9
17.0 0.747 149.7 1.151 6.0 0.126 12.2 0.529 -107.0 0.812 1.2 9.6
18.0 0.754 144.9 1.077 0.4 0.127 11.7 0.541 -111.6 0.808 0.6 9.3
19.0 0.761 140.4 1.009 -5.1 0.128 11.2 0.553 -116.1 0.800 0.1 9.0
20.0 0.768 136.1 0.945 -10.4 0.129 10.8 0.566 -120.5 0.787 -0.5 8.7

Note:
1. Gain Calculations:

, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12

|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

2. S-parameters include bond wires as follows:

GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE: 0.0007" (17.8 µm) DIA. GOLD.
NE76100

TYPICAL SCATTERING PARAMETERS2 (TA = 25°C)

j50 +90˚

j100 +120˚ +60˚

j25
S11
20 GHz
+150˚ +30˚
j10

S11 S12 S21

10 25 50 100 .1 GHz S12
S22 .1 GHz .1 GHz
0 +180
– ˚ 20 GHz 0˚
.1 GHz
S21
1
20 GHz
S22 2
-j10 20 GHz
-150˚ 3 -30˚

4
-j25 -j100
-120˚ 5 -60˚
-j50 -90˚

VDS = 3 V, lDS = 40 mA
FREQUENCY S11 S21 S12 S22 K S21 MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB) (dB)

0.1 0.999 -2.8 5.433 177.9 0.003 86.4 0.685 -1.3 0.054 14.7 32.4
0.2 0.999 -5.6 5.428 175.9 0.006 86.0 0.684 -2.5 0.039 14.7 29.4
0.5 0.995 -13.9 5.391 169.7 0.015 82.3 0.681 -6.3 0.049 14.6 25.4
1.0 0.981 -27.5 5.267 159.6 0.030 75.5 0.671 -12.5 0.085 14.4 22.4
1.5 0.961 -40.6 5.079 150.0 0.044 69.0 0.655 -18.3 0.123 14.1 20.7
2.0 0.937 -53.0 4.846 140.8 0.055 62.9 0.637 -23.7 0.162 13.7 19.4
3.0 0.885 -75.5 4.325 124.4 0.074 52.6 0.596 -33.1 0.239 12.7 17.7
4.0 0.838 -94.8 3.815 110.2 0.087 44.4 0.559 -40.8 0.313 11.6 16.4
5.0 0.800 -111.3 3.365 97.8 0.096 38.1 0.530 -47.4 0.385 10.5 15.4
6.0 0.773 -125.6 2.984 86.9 0.102 33.2 0.508 -53.2 0.453 9.5 14.7
7.0 0.753 -138.0 2.666 77.1 0.107 29.4 0.494 -58.5 0.516 8.5 14.0
8.0 0.741 -148.9 2.400 68.1 0.110 26.3 0.484 -63.6 0.573 7.6 13.4
9.0 0.733 -158.6 2.176 59.8 0.112 23.9 0.480 -68.6 0.625 6.8 12.9
10.0 0.728 -167.3 1.985 51.9 0.114 21.9 0.479 -73.4 0.670 6.0 12.4
11.0 0.727 -175.2 1.821 44.5 0.115 20.3 0.480 -78.2 0.709 5.2 12.0
12.0 0.728 177.6 1.679 37.5 0.117 18.9 0.484 -82.9 0.740 4.5 11.6
13.0 0.731 170.9 1.554 30.7 0.118 17.8 0.490 -87.7 0.765 3.8 11.2
14.0 0.734 164.7 1.442 24.3 0.119 16.9 0.497 -92.4 0.784 3.2 10.8
15.0 0.739 159.0 1.343 18.0 0.120 16.2 0.506 -97.1 0.795 2.6 10.5
16.0 0.745 153.6 1.252 12.0 0.121 15.5 0.516 -101.7 0.800 2.0 10.1
17.0 0.751 148.6 1.170 6.2 0.123 14.9 0.527 -106.3 0.799 1.4 9.8
18.0 0.758 143.9 1.094 0.5 0.124 14.4 0.538 -110.9 0.793 0.8 9.5
19.0 0.765 139.4 1.024 -4.9 0.125 13.9 0.551 -115.4 0.782 0.2 9.1
20.0 0.772 135.2 0.959 -10.2 0.127 13.5 0.563 -119.9 0.767 -0.4 8.8

Note:
1. Gain Calculations:

, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12

|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

2. S-parameters include bond wires as follows:

GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG.
DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG.
SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG.
WIRE: 0.0007" (17.8 µm) DIA. GOLD.
 NE76100

NE76100 LINEAR MODEL

SCHEMATIC

LG RG CDG RD LD

0.235 0.04
1.2 2
GATE DRAIN
GGS
CGS
1E-6 CDC
0.085 RDS CDS
g
0.079
t
f=200GHz
RI
3

RS
2

LS
0.025

SOURCE

BIAS DEPENDANT MODEL PARAMETERS

Parameters 3 V, 10 mA 3 V, 20 mA 3 V, 30 mA 3 V, 40 mA

g 48 mS 63 mS 70 mS 76 mS
t 5 pSec 4.5 pSec 4.5 pSec 4 pSec
RDS 350 ohms 260 ohms 240 ohms 230 ohms
CGS 0.45 pF 0.52 pF 0.57 pF 0.61pF
CDG 0.07 pF 0.068 pF 0.065 pF 0.061 pF

UNITS MODEL RANGE

Parameter Units Frequency: 0.1 to 20 GHz
Bias: VDS = 3 V, ID = 10, 20, 30, 40 mA
capacitance picofarads
Date: 10/23/96
inductance nanohenries
resistance ohms
conductance millisiemans
time picoseconds
frequency gigahertz
NE76100

OUTLINE DIMENSIONS (Units in µm)

NE76100 (CHIP)

500

40
102
58 47
90
S S
76
76
133 D D
360

90 205
70
G
45

Chip Thickness: 140 µm

Note:
All dimensions are typical unless otherwise specified.

ORDERING INFORMATION
PART NUMBER IDSS SELECTION
NE76100 30 to 100 mA (Standard)
NE76100N 30 to 60
NE76100M 60 to 100

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DATA SUBJECT TO CHANGE WITHOUT NOTICE 12/02/99