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    Nte 392

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    aalex28
    The document describes NTE392 and NTE393 silicon complementary transistors. They are designed for general purpose power amplifier and switching applications in a TO218 package. Key features include a continuous collector current of 25A, excellent DC gain of 40 typical, and a high current gain bandwidth product of 3MHz minimum. The document provides maximum ratings and electrical characteristics for the transistors.

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    Nte 392

    Uploaded by

    aalex28
    84 views2 pages
    The document describes NTE392 and NTE393 silicon complementary transistors. They are designed for general purpose power amplifier and switching applications in a TO218 package. Key features include a continuous collector current of 25A, excellent DC gain of 40 typical, and a high current gain bandwidth product of 3MHz minimum. The document provides maximum ratings and electrical characteristics for the transistors.

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    The document describes NTE392 and NTE393 silicon complementary transistors. They are designed for general purpose power amplifier and switching applications in a TO218 package. Key features include a continuous collector current of 25A, excellent DC gain of 40 typical, and a high current gain bandwidth product of 3MHz minimum. The document provides maximum ratings and electrical characteristics for the transistors.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    84 views2 pages

    Nte 392

    Uploaded by

    aalex28
    The document describes NTE392 and NTE393 silicon complementary transistors. They are designed for general purpose power amplifier and switching applications in a TO218 package. Key features include a continuous collector current of 25A, excellent DC gain of 40 typical, and a high current gain bandwidth product of 3MHz minimum. The document provides maximum ratings and electrical characteristics for the transistors.

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    NTE392 (NPN) & NTE393 (PNP)

    Silicon Complementary Transistors


    General Purpose
    Description:
    The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package
    designed for general purpose power amplifier and switching applications.
    Features:
    D 25A Collector Current
    D Low Leakage Current: ICEO = 1mA @ VCE = 60V
    D Excellent DC Gain: hFE = 40 Typ @ 15A
    D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz
    Absolute Maximum Ratings:
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Collector Current, IC
    Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
    Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
    Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
    Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
    Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C
    Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ
    Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
    Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W
    Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle 10%.

    Electrical Characteristics: (TC = +25C unless otherwise specified)


    Parameter

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    100

    OFF Characteristics
    CollectorEmitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2
    CollectorEmitter Cutoff Current
    EmitterBase Cutoff Current

    ICEO

    VCE = 60V, IB = 0

    mA

    ICES

    VCE = 100V, VEB = 0

    0.7

    mA

    IEBO

    VEB = 5V, IC = 0

    mA

    hFE

    IC = 1.5A, VCE = 4V

    25

    IC = 15A, VCE = 4V

    15

    75

    IC = 15A, IB = 1.5A

    1.8

    IC = 25A, IB = 5A

    IC = 15A, VCE = 4V

    2.0

    IC = 25A, VCE = 4V

    4.0

    ON Characteristics (Note 2)
    DC Current Gain
    CollectorEmitter Saturation Voltage
    BaseEmitter ON Voltage

    VCE(sat)
    VBE(on)

    Dynamic Characteristics
    SmallSignal Current Gain

    hfe

    IC = 1A, VCE = 10V, f = 1kHz

    25

    CurrentGain Bandwidth Product

    fT

    IC = 1A, VCE = 10V,


    f = 1MHz, Note 3

    MHz

    Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.


    Note 3. fT = |hfe|  ftest
    .060 (1.52)

    .600
    (15.24)

    .173 (4.4)
    C

    .144 (3.65)
    Dia. Max
    B

    .550
    (13.97)

    .430
    (10.92)

    .500
    (12.7)
    Min
    .055 (1.4)

    .216 (5.45)

    .015 (0.39)

    NOTE: Dotted line indicates that


    case may have square corners

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