MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory

March 1988

MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory

General Description
The MM54C89 MM74C89 is a 16-word by 4-bit random access read write memory Inputs to the memory consist of four address lines four data input lines a write enable line and a memory enable line The four binary address inputs are decoded internally to select each of the 16 possible word locations An internal address register latches the address information on the positive to negative transition of the memory enable input The four TRI-STATE data output lines working in conjunction with the memory enable input provide for easy memory expansion Address Operation Address inputs must be stable tSA prior to the positive to negative transition of memory enable It is thus not necessary to hold address information stable for more than tHA after the memory is enabled (positive to negative transition of memory enable)
Note The timing is different than the DM7489 in that a positive to negative transition of the memory enable must occur for the memory to be selected

Read Operation The complement of the information which was written into the memory is non-destructively read out at the four outputs This is accomplished by selecting the desired address and bringing memory enable low and write enable high When the device is writing or disabled the output assumes a TRI-STATE (Hi-z) condition

Features
Y Y Y Y

Y Y Y

Wide supply voltage range 3 0V to 15V Guaranteed noise margin 1 0V High noise immunity 0 45 VCC (typ ) Low power fan out of 2 TTL compatibility driving 74L Low power consumption 100 nW package (typ ) Fast access time 130 ns (typ ) at VCC e 10V TRI-STATE output

Write Operation Information present at the data inputs is written into the memory at the selected address by bringing write enable and memory enable low

Logic and Connection Diagrams

Dual-In-Line Package

Top View

TL F 5888 2

Order Number MM54C89 or MM74C89

TL F 5888 1

TRI-STATE is a registered trademark of National Semiconductor Corporation C1995 National Semiconductor Corporation

TL F 5888

RRD-B30M105 Printed in U S A

Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications
Voltage at any Pin Operating Temperature Range MM54C89 MM74C89 Storage Temperature Range (TS)
b 0 3V to VCC a 0 3V b 55 C to a 125 C b 40 C to a 85 C b 65 C to a 150 C

Power Dissipation (PD) Dual-In-Line Small Outline Operating VCC Range Absolute Maximum VCC Lead Temperature (TL) (Soldering 10 seconds)

700 mW 500 mW 3 0V to 15V 18V 260 C

DC Electrical Characteristics Min

Symbol CMOS TO CMOS VIN(1) VIN(0) VOUT(1) VOUT(0) IIN(1) IIN(0) IOZ ICC VIN(1) VIN(0) VOUT(1) VOUT(0) Logical 1 Input Voltage Logical 0 Input Voltage Logical 1 Output Voltage Logical 0 Output Voltage Logical 1 Input Current Logical 0 Input Current Output Current in High Impedance State Supply Current Logical 1 Input Voltage Logical 0 Input Voltage Logical 1 Output Voltage Logical 0 Output Voltage Parameter

Max limits apply across temperature range unless otherwise noted Conditions Min 35 80 15 20 45 90 05 10
b 0 005 b1 0 b1 0 b 0 005

Typ

Max

Units V V V V V V V V mA mA mA mA mA V V

VCC e 5 0V VCC e 10V VCC e 5 0V VCC e 10V VCC e 5 0V IO e b10 mA VCC e 10V IO e b10 mA VCC e 5 0V IO e a 10 mA VCC e 10V IO e a 10 mA VCC e 15V VIN e 15V VCC e 15V VIN e 0V VCC e 15V V e 15V VCC e 15V VO e 0V VCC e 15V 54C VCC e 4 5V 74C VCC e 4 75V 54C VCC e 4 5V 74C VCC e 4 75V 54C VCC e 4 5V IO e b360 mA 74C VCC e 4 75V IO e b360 mA 54C VCC e 4 5V IO e a 360 mA 74C VCC e 4 75V IO e a 360 mA VCC e 5 0V VOUT e 0V TA e 25 C VCC e 10V VOUT e 0V TA e 25 C VCC e 5 0V VOUT e VCC TA e 25 C VCC e 10V VOUT e VCC TA e 25 C

10 10 300

0 005 b 0 005 0 05

CMOS LPTTL INTERFACE VCC b 1 5 VCC b 1 5 08 08 24 24 04 04

V V V V V V

OUTPUT DRIVE (See 54C 74C Family Characteristics Data Sheet) (Short Circuit Current) ISOURCE ISOURCE ISINK ISINK Output Source Current (P-Channel) Output Source Current (P-Channel) Output Sink Current (N-Channel) Output Sink Current (N-Channel)
b 1 75 b8 0 b3 3 b 15

mA mA mA mA

1 75 80

36 16

Note 1 Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed Except for Operating Range they are not meant to imply that the devices should be operated at these limits The table of Electrical Characteristics provides conditions for actual device operation

AC Electrical Characteristics
Symbol tpd tACC tSA tHA tME Parameter Propagation Delay from Memory Enable Access Time from Address Input Address Setup Time Address Hold Time Memory Enable Pulse Width

TA e 25 C CL e 50 pF unless otherwise noted Conditions VCC e 5V VCC e 10V VCC e 5V VCC e 10V VCC e 5V VCC e 10V VCC e 5V VCC e 10V VCC e 5V VCC e 10V 2 150 60 60 40 400 150 250 90 Min Typ 270 100 350 130 Max 500 220 650 280 Units ns ns ns ns ns ns ns ns ns ns

AC Electrical Characteristics
Symbol tSR tWS tWE tHD tSD t1H t0H Parameter Write Enable Setup Time for a Read Write Enable Setup Time for a Write Write Enable Pulse Width Data Input Hold Time Data Input Setup Propagation Delay from a Logical 1 or Logical 0 to the High Impedance State from Memory Enable Propagation Delay from a Logical 1 or Logical 0 to the High Impedance State from Write Enable Input Capacity Output Capacity Power Dissipation Capacity

TA e 25 C CL e 50 pF unless otherwise noted (Continued) Conditions VCC e 5V VCC e 10V VCC e 5V VCC e 10V VCC e 5V tWS e 0 VCC e 10V tWS e 0 VCC e 5V VCC e 10V VCC e 5V VCC e 10V VCC e 5V CL e 5 pF RL e 10k VCC e 10V CL e 5 pF RL e 10k 300 100 50 25 50 25 180
b 85

Min 0 0

Typ

Max

Units ns ns

tME tME 160 60

ns ns ns ns ns ns ns ns

300 120

ns ns

t1H t0H

VCC e 50V CL e 5 pF RL e 10k VCC e 10V CL e 5 pF RL e 10k

180 85

300 120

ns ns

CIN COUT CPD

Any Input (Note 2) Any Output (Note 2) (Note 3)

5 65 230

pF pF pF

AC Parameters are guaranteed by DC correlated testing Note 2 Capacitance is guaranteed by periodic testing Note 3 CPD determines the no load AC power consumption of any CMOS device For complete explanation see 54C 74C Family Characteristics application note AN-90

AC Electrical Characteristics
Parameter tPD Conditions VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V VCC e 15V 210 90 70 80 55 45 560 210 170 420 140 110 70 35 30 Min

Guaranteed across the specified temperature range CL e 50 pF MM74C89 TA e b40 C to a 85 C Min Max 600 265 210 780 345 270 180 80 60 70 50 40 480 180 150 360 120 100 60 30 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units

MM54C89 TA e b55 C to a 125 C Max 700 310 250 910 400 320

tACC

tSA

tHA

tME

tWE

tHD

AC Parameters are guaranteed by DC correlated testing

AC Electrical Characteristics
Guaranteed across the specified temperature range CL e 50 pF (Continued) Parameter tSD Conditions VCC e 5V VCC e 10V VCC e 15V VCC e 5V VCC e 10V CL e 5 pF VCC e 15V RL e 10 kX MM54C89 TA e b55 C to a 125 C Min 70 35 30 420 170 135 Max MM74C89 TA e b40 C to a 85 C Min 60 30 25 360 145 115 Max ns ns ns ns ns ns Units

t1H t0H

AC Parameters are guaranteed by DC correlated testing

Truth Table
ME L L H H WE L H L H Operation Write Read Inhibit Storage Inhibit Storage Condition of Outputs TRI-STATE Complement of Selected Word TRI-STATE TRI-STATE

AC Test Circuits
t0H t1H

TL F 5888 3 TL F 5888 4

Switching Time Waveforms

t0H t1H

TL F 5888 6 TL F 5888 5

Read Cycle

Write Cycle

TL F 5888 7

TL F 5888 8

Switching Time Waveforms (Continued)

Read Modify Write Cycle

TL F 5888 9

Note tr e 60 ns tf e 10 ns

MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory

Physical Dimensions inches (millimeters)

Ceramic Dual-In-Line Package (J) Order Number MM54C89J or MM74C89J NS Package Number J16A

Molded Dual-In-Line Package (N) Order Number MM54C89N or MM74C89N NS Package Number N16E LIFE SUPPORT POLICY NATIONALS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user
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