UNCLASSIFIED

AD NUMBER
AD850232

NEW LIMITATION CHANGE TO

FROM
Distribution authorized to U.S. Gov't. agencies and their contractors; Administrative/Operational Use; Mar 1969. Other requests shall be referred to Commanding Officer, Naval Weapons Center, Corona Lab., Attn: Code 2035, Corona, CA 91720.

AUTHORITY
US Naval Weapons Center ltr dtd 16 Apr 1969

THIS PAGE IS UNCLASSIFIED

,,4 .r

NWCCL TP 845

0(
SO00

THE LINVILL METHOD OF HIGH FREQUENCY TRANSISTOR AMPLIFIER DESIGN

4by
D. Rubin
&.,

ODOD
--I~rFA r r{
4
5

,.Research Department

ABSTRACT. This report discusses a method-known as theinvill method-for determining the terminations that a transistor amplifier should have for a specified value of power gain and bandwidth. Basically, the Linvill method makes use of measured transistor parameters to develop charts from which one can read power gain and input impedance or admittance as functions of the load terminations. This report gives a complete geometrical deri-v-ation of the Linville "stability factor," whose value is an indication of the stability of the amplifier under various load conditions. In addition, procedure steps are given for using the charts developed for determining input and load admittances.

NAVAL

WEAPONS

CENTER

CORONA LABORATORIES, CORONA, CALIFORNIA * MARCH 1969

DISTRIBUTION STAT!UMENT FOREIGN THIS DOCUMENT IS SUBJECT TO SPECIAL EXPORT CONTROLS AND EACH TRANSMITTAL TO COMCR FOREIGN NATIONALS MAY BE MADE ONLY WITH PRIOR APPROVAL OF THE (CODE 2035). CORONA. MANDING OfFICER OF THE NAVAL ',WEAPONS CENTER CORONA LABORATORIES CAL;FORNIA 91720.

"GOVERNMENVS

CFMl

* WhITE SECTION

Doc FCAi........

lUf

SECT

VAL

EAPONS
............................

CENTER
Commanding

CORONA
... R. M. Fo-bis, CDR.. USN

LABORATORIES
Officer

...............

aim,3UT)lIOM/MAAILABILITY CODES I DIST. i AVAI . xr -'r S PEIALI

FOREWORD In designing high frequency receivers-, personnel of the Electronics Division of the Naval Weapons Center Corona Laboratories must devise sensitive amplifiers which have very little noise and wide bandwidth. Such circuits require highly effective ust of transistors. This report describes a method by which. the measured admittance parameters of a transistor are used to obtain power gain as a function of frequency and load admittances of an amplifier. This work was accomplished under AIRTASK A36533/216/69F17343604.

Released by C. P. HABER
Acting Associate Head of Research Department, Corona

Under authority of H. W. HUNTER, Head

26 March 1969

NWC Corona Laboratories Technical Publication 845

Technical Information Division

Collation

. Cover,

17 leaves, DD Form 1473, abstract cards

F;' t printing ...... ............... Security classification .........

ii

NWCCL TP 845

i.

CONTENTS Introduction .................................... Power Relationships .......................... Stability Factor ....................................... Gain Relationships ............................. Application Steps ............................... Appendixe s: A. B. C. Conversion to h Parameters ...... ............. .. ... 25 ... .. .. .. 1 2 10 .11 18

Circle Intersection Points of C > 1 ............ Determination of Input Admittance from G2 and B 2 Values ...........................

.. ..

27 30

References ...................................

'I

ii

9.T.

NWCCL TP 845

INTRODUCTION It is not reasonable to use transistor models for the design of amplifiers in the UHF region and above. Actual measurement of the admittance (y), hybrid (h), or scattering (s) parameters of a transistor at the frequencies of interest is practical with laboratory instruments and leads to precise calculations of gain, bandwidth, input and output admittances, etc. In 1956 Linvill and Schimpf (Ref. 1) described a method by which gain and input impedance could be characterized graphically for any value of load admittance. All that was required was a knowledge of the h parameters at the frequencies of interest. From these, radii of various circles (gain circles) were calculated and positioned on a regular Smith Chart. The regions of stability were also clearly indicated. The method, which was reiterated in a book (Ref. 2), was revie- ed by various writers (Ref. 3 through 6), most of whom preferred the use of y parameters. An exceedingly important quantity known as the stability factor C (called the critical factor by Linvill) was defined by Linvill in his 1956 paper. The C factor, a function only of the device parameters, determined if the device would be stable for all values of load admittance, or if not, would determine the area of the Linvill chart (and hence the range of load values) to be avoided. Linvill and his reviewers define the C factor, but do not give explicit proof regarding its evaluation, although it was suggested that the C factor could be evaluated by way of geometry. In this report it will be shown that the geometry used in the discussion of the Linvill method could indeed be used to determine the value of the C factor. The explanation of the Linvill method can then be made without it being accepted on definition alone or requiring additional references. It will finally be shown how charts obtained by the Linvill method can be used to determine power gain and input admittance as a function of load admittance.

!1

P0W1~il 11 I11LAT1ONS1 11Ptig uiw~ 1hpjkt JPI) m~id power otitl,.At (P,,) rAr ubtatined fruiv the relattomhhipo botwoon Ninath Voltage liati aurrUVIt ph$ OOPO (Pl) Mcud (110 y OV1 PA PKIIietes11Of the dOViO -1, 8'ettering (o) pipikimptret may he directly convaredtnt to itheu' of thooo tw Not#, The The derivktion of fo11tjwftng analyoto wil be donte uiahi y patrmetro th.o po~wer' aut~utinN uping h pirametSIr In giveti in Appo-ndim A, ty
rq1iqHi~tNu

valitti

d"(tuittuIon iooo rigt, 1)

Vol

whorp~

V L t thie Wlla

chtti auikkvo

Tluwlaful,4e

Not Nert

y,

h "v~
"Y41l14

\"I.,y

YA -

Ihi u'pfuu'e, III MA041101.1411

NWCCL, TP 845

e-(L e 1Re

+ jM) y2 2 Since Pi Re(ilel'), where i1 and el are

(2)

where L and M are real. in rms values,

P. = Re Pile,

+ yi~e2)e

= Re

1i1

+ yiz(L + jM)

)I ell

Now, let Re I2+ l[ I2R - Re (L + jM ) [Re (. .ZY

1 p v. _._

lJZ

:~V2 "
Then (Y12Y21 21 LReI

]Jt ,Tzey (-yl 2)lJ + jIm

lYl +M.ImI

Y2 1

P'=Rey

also -Re i e, Po = -R) = -Re y

1 zi

+) lel + Y2 2 e 2

1
e2] (3) 3

= -Re[

i e(L+ 1

jM) (R

Y) Ne

+ Y2-

but

NWCCL TP

845

_------------------

~e 12

(L.)L+ =I.

..... jM) 1-2

L2 + M2 4(Rey,,) .1 l je 1

We next define Po where

Py=

-Re L.(L+

[Mo

-I

2) Ih2Z1 (L2 + M

M)

(22

Therefore,
_ _ _ _

2Re YM2

__ _

__

(4)

y 4Re(e

"Wre finally let

I)(a

Y2R1y 2

2 vRey

Z then fromeq.
pI

y2 2

2Re

3 and 4,
= Re yl 2 La2 + Ma2 (6)

N2)2 - , (L+ L Me 1b 2b

(7)

NWCCL TP 845

The constants L and M are functions of YL' eYZ 2 .YL (L + jM)

since from Eq. 1 and 2

or

MRe Y22
L L+ jM
T

'
Y22

(8)

That is, a given value of L and M represents a specific YL. For YL = Y22' we have from Eq. 8 Y
L 22-

2ReY 2
L+ jM
-jY

(Re y2 2

)
+ Y2 )

?' (R e
=

(Re Y 22

Y.Ym 2

Re

Y2 2 (L+ M

I)~r
j2

Therefore

2 jML+ L jMi

1 =1 Consequently, for YL =Y2Z,

or L = 1 and M= 0.
P! 1
=

B'.

10

bI P' =P' = o 00 and gain PI

(9)

P'

00 10

is therefore,

from Eq. 7 and 9,

NWCCLTP 845

P'

=2P' L
0

-(L

+ M 2 )?'
-

00

oo

[(L

1)2

M(o

The equation for Pl is that of a paraboloid whose axis is along the line L = 1, M = 0, and whose maximum height is P'0o. Its intersection with the LM-plane (see Fig. 2) occurs when P' = 0. There we have 2 1 M = 0). 1, i.e., a circle of radius I centered at (L 1, (L2 ._)2 + MI

I!/\
.'<,<.'.

",
SIlk

~\

I\.\
I

I 0
.

..-'-; ,
-N.

M'=L

FIG. Z.

Power Output and Input as Functions of L. and M.

The equation for Pt is that of a plane, intersecting the LM-plane along the line given when P1 = 0, i.e., when 0 = ReYlLaI + Ma 2 , or

NWCCL TP 845

aI M = a

Re -(01) a2

There is another line, M' (called the gradient line), which lies ir the I,Mplane, is perpendicular to the Pt = 0 line, and intersects (L = 1, M = 0). This line is the projection of a line in the Pt plane along the maximum slope of the plane. The gradient line may be written in the slope-irintercept form M = mL + d. For this line to be perpendicular to the Pt = 0 line, the slopes of the two lines must be negative recipricals of each other, i.e., a a1

I a a2 so that a2 M= -a1 L+

For M= 0 we must have L = 1, for the gradient line is a2 M = -a1

so that d = a 2 /a

Hence the equation

(L

1)

(12)

The P! = 0 line and the gradient line intersect at (ho, Mo). I Eq. 11 and 12,

From

Mo

(R4e \a 2 /

" 2I

\al/Jo

a1

Solving for Mo and Lor)

we have

NWCCL TP 845

a.a

(Val)

a1

a1

\a/

The Po = 0 circle, the P= 0 line, and the gradient line are shcwn in Fig. 3. From the figure'

tan0 = -tan

1a 2 /ai; therefore

(14)

and from Eq. 12, when L = 0, M

tane

---

a2 a.I

(15)

and since

(-1 2

2 1)

=~Ry

12y 2 1)

im(yl,2 y 2 1 )]'

Re (Y1 2 Y2 1 ) + jim(yl 2 y 2 1 )

the equation for 9 in terms of y12 and Y2 1 is, from Eq. 5, 9 a1

-~(Yl

22

l)

(y1 2 y 2 1 ) or
= tan 1Arg(-yl 2 yl)" ""

(16)

_NWCCL

TP 845

\
GRADIENT LINE

FIG. 3.

LM-Plane Traces.

Any line perpendicular to the LM-plane which intersects the P plane and P_ paraboloid will give the gain G = Po/Pt_ =~ o/PI' for a particular value of L and M, and hence for a particular YL' For a given output power (a circle parallel to the LM-plane), the point of least power input must lie along the line of steepest descent of the Pt plane. To find the maximum gain, we find the point along the M' axis
which gives the largest P, over P ratio.

NWCCL TP 845

STABILITY FACTOR Sighting down the L' axis of Fig. 2, we obtain the projection shown in Fig. 4. The P! plane is reduced to a line and the P paraboloid reduced to a parabola. Note from Fig. 2 tnat instability can occur for some values of L and M if the Pt = 0 line intersects the Po = 0 circle. Within the sector thus formed, there will be some values of P even though Pt is zero or negative, i.e., the device will oscillate for some values of Y1 ,. In Fig. 4, if -r < -1 the dev'ce will be stable for all YL" From this figure it is clear that for potential instability C > 1; this is the C referred to earlier as the "stability factor." It will be shown that C depends only on the device parameters (not YL). In general there will be some frequency above which C will be less than one and (because of low inherent gain) the device cannot oscillate.

P?

100

-- 10 FIG. 4. Gain Diagram.

+1

We next derive the equation for C. Fig. 2 to be r

The distance r is found from

J(L

)'

(Mi

1)2(a )

)2
1 2)

=
and since from Eq. 13, (LO - W

~22

(a,/a?)ZMo

10

NWCCL TP 845

(a

a,,

Rey i 2

R y i
"1

F2[

1)+1--Il

Substituting values from Eq. 5, Re (yl2 y 21 ) r

y IIRe Y2 2 1

(17)

From the similar triangles of Fig. 4,

r Therefore

j2Rey, Re y 2? -Re(y 1 Zy

GAIN RELATIONSHIPS We now find maximum device gain, Gmax. From Fig. 4, P' 1 - M' 2 ) and P!- P! (M'/r + 1); then the device gain, G, is 0 00( 1 10 ' p, p, i' G oi oo(
io

P=

~0

-MI

,2)=G

00

IK
-

(19)

When G = Gmax, let M' G

M' and K = KG, i.e., let (20) This gives

= KGG G 00

Then (dG/dM')M,=- = 0.

11

NWCCL TP 845

__

4t

-r M'
or since M' > -r

*=

-: I

r<

Substituting from Eq. 18 gives M' = "_, C (21)

From Eq. 19 we have

I+ CM' we get

substituting M' from Eq. 21,

-L
-

I(

12c

J1-

2\

(22)

Note in Eq. 22 that the maximum value of KG, given C < 1, occurs when C = 1. There KG = 2. The maximum gain Gmax, therefore, cannot be greater than 3 dB over the gain Goo given when YL = Y22" Also, KG cannot be defined for C > 1 since some values of YL will then cause oscillation. From Eq. 9 and 5,

Po
G 00

4Rey
z22

00

Pi

y ReYll - Re(yl Me 2 .2 1 )

j
or

NWCCL TP 845

G
00

IYZ 1 21
2[2Me Y,,Re Y2 2
-

(23)
Re (Y1 Z2Y2 I

From Eq. 18 and 19, K

1 + CM,
or M' 2 + CKM' = 1
-

K.

Therefore

S=

- K + (2)

(24)

Thcse are circles centered on the M' axis. Each value of K gives a circle whose center and radius, respectively, are given by CK MK - --K 2C

"PK

[IK+(.-" G max)

(25)

Specifically, for K = KG (G

CKG

"MK
PKG =0

Mt

and for K = I (G = G MK

).

C
C

S"

PK=l

13

NWCCL TP 845

Figures 5 and. 6 show constant gain circles constructed from the y parameters of a 2N4957 transistor. A few constant gain circles are shown at 1,000 MHz (Fig. 5) and 450 MHz (Fig. 6). Note particularly that for C < 1, 1. A gain of KG Goo occurs at only one point (a particular YL).

2. A gain of I Goo occurs for a circle which includes the point L= 1, M= 0. 3. Gain circles are contained within one another-the largest circles correspond to the least gain.

and for C > 1, 1. As can be seen from Fig. 4, gain corresponding to values of MI < -r are indeterminate. Areas to one side of the M' = 1/C line in Fig. 6 correspond to values of YL which will lead to oscillation. Figure 7 shows the gain diagram for such a case. 2. Equation 2Z is meaningless; however, Eq. Z3, 24, and 25 hold, just as for C < 1. 3. All circles intersect at M' Appendix B). -I/C, L'= A- - I/CZ (sec

We have now found the gain of the device as a function of L and M. Since the L and M values relate to YL, we now find gain as a function of YL' Equation 8 gave ZRe Y 2, L+ jM

YL+ y 2 2 Set Y Then + y yL 22

= G + jB 2

(26)

14

NWCCL TP 845

100
5~

NWCCL TP 845

f
G

450 MHz
318

1.20

K=2-

M=M, 0 L

K=0,

K=0 .6

K="0.0

K=6for C= S~~FIG. 6. Constant Gain Circles

..

( 0
NWCCL TP 845

p P
00 P.0

UNSTABLE

FIG. 7.

Gain Diagram for MI < -r.

2ReY2 2 (L L G2 2LRe Y2 2L2 +M2

jM) 2

L2

L
or 2 .,

Ley2M
2M R e
2

+G L2 S+ 2
M

t.(L

2e

Y2MR2

eY~ G 2

(2e

G
17

NWCCL TP 845

BZ (++M .Y2~2)2

/ L =\BZ ( 2 a) /2Z

(27)

APPLICATION STEPS Equations 27 represent orthogonal circles, very similar to those obtained by relating reflection coefficient to load impedances of a transmission line (Smith Chart). The circles obtained from Eq. 27 are plotted in Fig. 8 and 9 over the gain circles of Fig. 6 and 7, respectively. Of course, oneneed only to use the ready-made circles on a Smith Chart. The design process is therefore as follows: 1. Normalize a Smith Chart in terms of Rey 2 2 (or Reh 2 2 ) as shown in Fig. 9. Be sure to add 1.0 to all values of the abscissa of the Smith Chart. 2. Obtain sets of Y parameters for the center of the frequency range to be used. For broadband amplifiers several sets may be required (for each set plot one chart). 3. 4. Draw the gradient line at an angle

= tan- 1 Arg (-Yl2zyz)":"r 2 7 21 )I"

Find C = IY 1 2 YZI I/IZReyRey2 2 - Re(,

5. If C > 1, draw a line perpendicular to the gradient line at a distance -1/C from the center of the chart.

6.

If C < 1, find KG= 2

C
IRey 2 2
-

7. Find Goo =8.

ReY1 2 Y2 1 )' centered at

2 Plot circles of radii PK = [1 - K + (KC/ ) )1T

MkCK/2.
9. Determine ranges of L and M values needed for given bandwidth. This determines required YL and also input admittance (Appendix C). 10. Devise matching networks for source and load impedances.

Steps 9 and 10 are best carried out on a digital computer, especially when a large bandwidth is required. Several sets of G2, B 2 values may

NWCCL

TP 845

f =1000 MHz
G =6.72

K=O8 LnilChr

C = 0.76.

K=0.

119

ItI

NWCCL TP 845-

G
00

1.20

9. FIG.

Chrtfo2C0.0

=il

20=

NWCCL TP 845

be lected, e.g., from within the K = 1 (Gain = Goo) circle of a Linvill cha. t near the highest frequency of interest. Each GZ, Bz set requires a particular output admittance. At this frequency a matching network is devised which makes the load appear as the required output admittance. The input admittance of the amplifier is also determined by the G 2 , B 2 set under consideration. An input network is then devised that makes this input admittance appear as the conjugate of the source admittance. We now have one frequency at which we know that all available power will be absorbed by the amplifier and a given power gain will appear at the load. At other frequencies the output network and load, togethor with the now values of y parameters, determine new G2, B2 valuts and henet new device pi1n. Tht resulting transistor input admittance and input network will determine how much available power will be absorbed by the amplifier. The network attenuation multiplied by the device gain yields total power gain of the amplifier as a function of frequency. ror some of the original GZ, B2 values selected at the high frequency, the resultant mismatches at lower frequencies will yield a rather level total-gain-versus-frequency curve.

21

NWCCL TP 845

Appendix A

CONVERSION TO h PARAMETERS In this appendix the procedure is shown for deriving the transistor power equations using the h parameters. By definition e i Therefore, e_ h2 1 hz +YL 22 +YL h22, 11
h h

-h
=

i1 + h 1 2 e 2

h 2iI + h

e2 = -e2YL

i-.-I
if YL w 0 l',

1 m t

2 (~YL=hZz ) But since Y

121 h 2 2 + h22

h 21 h2 2Reh 22

is not necessarity h 2 2 , set

e2

2Li il (L + jM) jZ~ 2-g2

where L and M are real.

Now

22

NWCCL TP 845

Re{l[il+ h(lh

YMh

ll1

1)

'in which e, i are in rrms values.

We then define hhh

ehise =

ReJh

12

21~

__

Reh+ +

"\

jJ 8)2

P.

/hzhl

FM/hhz

/h

Threo

eutoyn thgi Pb re = Re( Poen

em 1h
2

hpaaeesi

"1

/hi

2h

(=28

l Theefre teP eq aini te mofhp r eters isz

'2 + hzz[ZRehz (L- 1M'i11 (L + .iM\2Reh)1

jM )+

from which

12

Re Lh2((2Reh

Ih (h

21

he
22

2(28hl

22

23

NWCCL TP 845

or P'=L 2 -2Reh o

V 1
22

2I)h
(L + M )zReh
22

(29)2

Equations 28 and 29, it can be noted, are identical to Eq. 3 and 4 if we set Y12Yzl M. e y 22 h12 h21 2Ke h 22

a-

2ReY12

2Rehl2

The analysis follows through with hij zation of the Smith Charts to Reh 2 .i

yip including the normalig

24

NWCCL TP 845

Appendix

CIRCLE INTERSECTION POINTS FOR C > 1 In this appendix it is shown that the Dower gain circles for C > 1 all intersect at (M' = -1/C, L' = 41 - 1/C 2 ). Equations 25 gives 2K

The equations for circles of different K values (see Fig. 10) can be written
(L') 2 + (M' , 2 =) 2

/
K

FIG. 10.

Gain Circle Intersections. 25

a!
NWCCL TP 845
_

Substituting for PK and 2 2

Mk,

we get

(L') + (M') + CM'K

If the intersection of two circles due to K1 and K 2 occur at L'1 and MW, we will have (L) (M')+ CMIK = 1 -K

(L-,)Z + (MI.)

+ CM!K 2 = 1 - K

Solving simultaneously, we find that

i
L

M1 -C

-(30)

Since M! and L! are independent of K values, all circles for C > 1 will intersect at 1 %1 ' M'
-

L=

1C-C2

and (L')- + (M.)2 = 1, i.e., the intersections are those points where the M' = -1/C line intersects the extremities of the Smith Chart.

NWCCL TP 845

Appendix

DETERMINATION OF INPUT ADMITTANCE FROM G AND B VALUES 2 2 The following procedure shows how the input admittance Yin can be determined from the coordinates of a point (G 2 , Bz) on the Linvill chart. Since, by Eq. 1,
eI = YlleI + Y12e2

e2 = el(L + iM)
2
=

/ 2Rey y 1
2

Then

Y.

(L-+

M)(2' 2y2)

(31)

As in Eq. 5, let

a a, + ja:
A

2Rey22!

ale

al cosk

j al

sinfl

Then tan(W = a 2 /a,

= tang' = -tanG (Eq. 14 and 15).

From Fig. 3,

sino = sinG cosO = -cosa

Therefore, a = -al (cosO

jsinO)

27

NWCCL TP 845

Substitution in Eq. 31 then gives

Y in
or

+ (L+ jM)IaI (cos9

-JisinO)

Y~s

- Yl

lal

= (L+ jM)(cosO - j sinQ)

(32)

= (LcosO+ MsinO)+ j(McosO - LsinO) = M"+ jL" where M", L" are orthogonal axes rotated an angle 0 from the L, M axes. The projections M", L" of the point (GZ, BZ) onto these axes thereby give (see Fig. 11) Y in = Yll + a(M" + jL"-.)

C.in+ jB.

L" AXIS

M AXIS

(G 2,

B)

I ",l ; .1t

Ax f~i t s

IN L AXIS (1,0) L

FIG. 11.

Point Coordinates for Two Sets of Axes.

28

NWCCL TP 845

where Gin and Bin, the input conductance and susceptance, are G in Rey
1

respectively,

+ laIM"

B.in = Iayl
and

aIL" l

MRe y22

29

NWCCL TP 845

REFERENCES 1. Linvill, J. G., and L. G. Schinmpf. "The Design of Tetrode Transistor Amplifiers," BELL SYST TECH J, Vol. 35 (July 1956), pp. 813-840. Linvill, J. G., and J. F. Gibbons. New York, McGraw-Hill, 1961. Transistors and Active Circuits.

2..

3.

Johnson, G. "High Frequency Amplifier Design Using Admittance Parameters," ELECTRO-TECHNOL (November 1963), pp. 74-79. Johnson, G., P. Norris, and F. Opp. "High Frequency Amplifier Design Using Admittance Parameters," ELECTRO-TECHNOL (December 1963), pp. 66-74. Lauchner, J., and M. Silverstein. "Design High Frequency Amplifiers Graphically," ELECTRON DESIGN (April 1966), pp. 48-54. Texas Instruments, Inc. Solid State Communication, by the Engineering Staff. New York, ,IcGraw-Hill, 1966.

4.

5.

6.

30

s..turtt, Clsmca.,,o.

UNCLASSIFIED DOCUMENT CONTROL DATA - R & D

(Security classificationof title, body of abstract nlidindexi.p annorficmn n u.t hb entered when the overall repoFI is (i.,sili,?d)
I OF41INATING ACTIVITY (Corporate author) 20. REPORT SECURI TY CLASSIFICA TION

Naval Weapons Center Corona Laboratories

UNCLASSIFIED
2b. GRo

Corona, California 91720

THE LINVILL METHOD OF HIGH FREQUE'NCY TRANSISTOR AMPLIFIER DESIGN

AU THOSiS1 (First

name, middle initial,

Jase nvee)

David Rubin
, REPORT'OATE 7s, 7OTAL NO, OF PAGES

7b. NO. OF R EF 5

March 1969
0a. CONTRACT OR GRANT NO. go.

31
ORIGINATOR'S REPORT NUM9TERISI

b. PROJECT

NO.

NWCCL TP 845
,. OTER REPORT NOISI (Any other numbers that may be assigned this report)

C. AIRTASK A36533/216/69FI7343604
d.
10

DISTRIBUTION

STATEMET' -

DRTTHIS

DOCUMENT IS SUBJECT TO SPECIAL EXPORT CONTROLS AND EACH TRANSMITTAL TO FOREIGN GOVERNMENTS OR FOREIGN NATIONALS MAY BE MADE ONLY WITH PRIOR APPROVAL OF THE COMMANDING OFFICER OF THE NAVAL WEAPONS CENTER CORONA LABORATORIES (CODE 2035), CORONA, CALIFORNIA 91720.
12. SPONSORING MILITAN4Y ACTIVITY

SUPPLEMENTARY

NOTES

Naval Air Systems Command Navy Department

Washington,

D. C.

20360

13

AB

TRACT

This report discusses a method-known as the Linvill method-for determining the terminations that a transistor amplifier should have for a specified value of power gain and bandwidth. Basically, the Linvill method makes use of measured transistor parameters to develop charts from which one can read power gain and input impedance or admittance as fun..tions of the load termination. The report gives a complete geometrical derivation of the Linvill "stability factor,'1 whose value is an indication of the stability of the amplifier under various load conditions. In addition, procedure steps are given for using the charts developed for determining input and load admittances.

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Linvill method transistor amplifiers admittance parameters Smith Chart stability factor

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INFORMATI ON

NOTICES OF CHANGES IN CLASSIFICATION, DISTRIBUTION AND AVAILABILITY

AD-850 232

Naval Wapons Center, Calif, Corona Labs. Nept. No. N4t"Ccl-TP8W5

No Foreign without approval op Commanding Offic(,r, Naval W'apons Celter,

No limitation

USNWC Itr,

16 Apr 69

Coronat, crtiif.