TLP190B: Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver

TLP190B
TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array
TLP190B
Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver
Unit in mm
The TOSHIBA mini flat coupler TLP190B is a small outline coupler, suitable for surface mount assembly. The TLP190B consists of a GaAAs light emitting diode, optically coupled to a series connected photo diode array which is suitable for MOS FET gate drive.
Open voltage: 7.0V (min.) Short current: 12.0A (min.) Isolation voltage: 2500Vrms (min.) UL recognized: UL1577, file no. E67349 TOSHIBA 114C1
Absolute Maximum Ratings (Ta = 25C)

Characteristic Forward current Forward current derating (Ta 25C) LED Pulse forward current (100s pulse 100pps) Reverse voltage Junction temperature Forward current Detector Reverse voltage Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. 60%) (Note) Symbol IF IF / C IFP VR Tj IFD VRD Tj Tstg Topr Tsol BVS Rating 50 0.5 1 3 125 50 10 125 55~125 40~85 260 2500 Unit mA mA / C A V C A V C C C C Vrms
Weight: 0.09 g
Pin Configuration (top view)

1 6
4 1. Anode 3. Cathode 4. Cathode 6. Anode
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
2007-10-01
TLP190B
Recommended Operating Conditions
Characteristic Forward current Operating temperature Symbol IF Topr Min. 25 Typ. 20 Max. 25 85 Unit mA C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25C)

Characteristic Forward voltage LED Reverse current Capacitance Forward voltage Detector Reverse current Capacitance (anode to cathode) Symbol VF IR CT VFD IRD CTD Test Condition IF = 10 mA VR = 3 V V = 0, f = 1 MHz IC = 10 A VR = 10 V V = 0, f = 1 MHz Min. 1.2 Typ. 1.4 30 7 1 Max. 1.7 10 60 Unit V A pF V nA pF
Coupled Electrical Characteristics (Ta = 25C)

Characteristic Open voltage Short current Symbol VOC ISC Test Condition IF = 10 mA IF = 10 mA MIn. 7 12 Typ. 8 20 Max. Unit V A
Isolation Characteristics (Ta = 25C)

Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second in oil DC, 1 minute in oil Min. 510
10
Typ. 0.8 10
14
Max.
Unit pF Vrms Vdc
2500
5000 5000
Switching Characteristics (Ta = 25C)

Characteristic Turnon time Turnoff time Symbol tON tOFF Test Condition IF = 20 mA, RSH = 510 k (Fig. 1) CL = 1000pF Min. Typ. 0.2 1 Max. Unit ms ms
Fig. 1 Switching time test circuit

IF RSH CL VOUT 0V RSH : External shunt resistance tON 5V 1V tOFF VOUT IF
2007-10-01
TLP190B
IF Ta
100 4.0 3.6
VF /Ta IF
Allowable forward current IF (mA)
80
Forward voltage temperature Coefficient VF /Ta (mV / C)
3.2 2.8 2.4 2.0 1.6 1.2 0.8
60
40
20
0 20
20
40
60
80
100
0.1
0.3 0.5
10
30
Ambient temperature Ta (C)
Forward current
IF (mA)
IF V F
100 Ta = 25 C 5000 3000
IFP DR
Pulse width 100s Ta = 25 C
Pulse forward current IFP (mA)
50
(mA)
30
1000 500 300
Forward current IF
10
5 3
100 50 30
1 1.0
10 1.2 1.4 1.6 1.8 2.0 2.2 3 10
10
10
10
Forward voltage VF
(V)
Duty cycle ratio
DR
2007-10-01
TLP190B
IO VO
Ta = 25 C 40 100 30 10 3 1 0.3 0.1 0.03 6 10 0.01 10 2 3
tON, tOFF CL
RSH=2.4M 1M 510k 300k IF=20mA RSH IF VOUT 0V tON 300 10 3000 10 4 5V tOFF tOFF tON Ta = 25 C IF = 20 mA VOUT CL
20 IF=0mA 0 5mA 10mA 15mA 40 20mA 25mA 60 0 2 4 8
20
Switching time tON, tOFF (ms)
Output current
IO
(A)
300k 510k 1M 2.4M
1V
Output voltage
VO
(V)
Load capacitance
CL (PF)
VOC IF
10 RSH OPEN 100 50 30 1M
ISC IF
(V)
VOC
(A)
510k
10
Short current ISC

Ta = 25 C
Open voltage
300k
1 0.5 0.3 0.1 1 Ta = 25 C
2 RSH=2.4M 0 1 3 5 10
30
50
100
10
30
50
100
Forward current
IF (mA)
Forward current
IF (mA)
VOC Ta
12 24
ISC Ta
10
20
(V)
VOC
(A) Short current ISC

IF = 10mA 20 20 120
16
Open voltage
12
IF = 10mA 20 20 120
40
60
80
100
40
60
80
100
2007-10-01
TLP190B
RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
2007-10-01

TLP190B: Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver

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TLP190B

TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array

Absolute Maximum Ratings (Ta = 25C)

Pin Configuration (top view)

4 1. Anode 3. Cathode 4. Cathode 6. Anode

Individual Electrical Characteristics (Ta = 25C)

Coupled Electrical Characteristics (Ta = 25C)

Isolation Characteristics (Ta = 25C)

Unit pF Vrms Vdc

Switching Characteristics (Ta = 25C)

Fig. 1 Switching time test circuit

Allowable forward current IF (mA)

Forward voltage temperature Coefficient VF /Ta (mV / C)

3.2 2.8 2.4 2.0 1.6 1.2 0.8

Ambient temperature Ta (C)

Pulse forward current IFP (mA)

1000 500 300

10 1.2 1.4 1.6 1.8 2.0 2.2 3 10

Duty cycle ratio

20 IF=0mA 0 5mA 10mA 15mA 40 20mA 25mA 60 0 2 4 8

Switching time tON, tOFF (ms)

300k 510k 1M 2.4M

Short current ISC

1 0.5 0.3 0.1 1 Ta = 25 C

(A) Short current ISC

Ambient temperature Ta (C)

Ambient temperature Ta (C)

RESTRICTIONS ON PRODUCT USE

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