A High Efficiency Boost Converter For TFT-LCD Bias Supply
A High Efficiency Boost Converter For TFT-LCD Bias Supply
z
) (1)
MP1
MP4
MP2
MN1
MN2 MN3 MN4
MP5
MP3
VSS
Vg
1 : K
V
P
V
N
Fig. 4. Operational transconductance amplier (OTA).
z
=
1
R
c
C
c
(2)
where G
m
and R
out
denote the transconductance and output
resistance of OTA, respectively.
The converters unity gain frequency set by the feedback
loop is usually set within 20 % of the switching frequency to
reduce the effect of switching noise. For the purposes of this
paper, adequate R
c
and C
c
values were selected to achieve a
phase margin of 60 degrees at Vg=3V, VGH=10V and load
current=100mA. Fig. 4 shows the OTA structure used in the
compensation circuit. The OTA transconductance G
m
can be
written as follows [7]:
G
m
=
I
out
V
P
V
N
= K g
mp4,5
. (3)
B. Clock and Ramp Generator
Vg
Vref
M1
C1
I
REF
hys_comp
Clock
Ramp
Fig. 5. Clock and ramp generator.
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3
TABLE I
PERFORMANCE SUMMARY OF THE SIMULATED BOOST
CONVERTER.
Process 0.5-m 5V, 3.5-m 30V
Switching frequency 1.3MHz
Supply voltage 2.5V 5V
Output voltage 10V 20V
Efciency(MAX) 92% @ Vg=5V, VGH=12V, Iout=120mA
Core area 2150m 2150m
Subharmonic oscillation is a well-known problem for cur-
rent mode switching converters with the duty ratio D larger
than 0.5. To avoid subharmonic oscillation, the slope of the
compensation ramp m
a
must be larger than half of the slope
of inductor current m
2
during the second subinterval
DT. The
value of m
a
is generally determined as follows [8]:
m
a
m
2
2
(4)
where m
2
denotes the slope (V g V GH)/L in the region
where inductor current decreases.
The circuit for generating the articial ramp signal and the
clock signal is shown in Fig. 5. The slope of the articial ramp
is determined by I
REF
and C1. When I
REF
from the current
source charges the capacitor C1, the voltage at the ramp node
increases at a xed rate I
REF
/C1, which is equal to the slope
m
a
. If the increasing ramp signal reaches V
ref
, the output node
of the hysteresis comparator switches from low to high and the
clock also becomes high. Once the clock switches to the high
state, it turns on transistor M1. In turn, C1 is discharged and
the ramp node voltage decreases. When the ramp node voltage
decreases to the low boundary of the hysteresis comparator,
its output switches from high to low, the clock drops to the
low state, and M1 is switched off, triggering I
REF
to charge
C1.
III. SIMULATION RESULTS
Simulation results show the successful operation of the
boost converter. Table I summarizes the overall characteristics.
The maximum efciency of the boost converter is 92 % at Vg
= 5 V, VGH = 12 V, and load current = 120 mA. Fig. 6
illustrates output voltages according to variation in the load
current. The test is conducted with Vg = 3 V, VGH = 10
V, inductor = 4.7 uH, capacitor = 4.7 uF, and a load current
variation of 10 100 10 mA. Fig. 7 also illustrates output
voltages according to variation in the load current. The test
is conducted with Vg = 3 V, VGH = 20 V, inductor = 4.7
uH, capacitor = 4.7 uF, and a load current variation of 10
100 10 mA. As the simulation results indicate, the boost
converter displays stable operation even under substantial load
current variation. Fig. 8 shows the start-up operation of the
boost converter. The test is conducted with Vg = 3 V, VGH
= 10 V, inductor = 4.7 uH, capacitor = 4.7 uF. The efciency
of the boost converter is shown in Fig. 9.
IV. CONCLUSION
In this paper, the boost converter is designed using a 0.5
m 5 V, 3.5 m 30-V CMOS process for TFT-LCD bias
Fig. 6. Load transient response.(Vg=3V, VGH=10V)
Fig. 7. Load transient response.(Vg=3V, VGH=20V)
Fig. 8. Startup operation.
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4
L=4.7uH, C=4.7uF
50
55
60
65
70
75
80
85
90
95
100
10 60 110 160 210
Load current (mA)
E
f
f
i
c
i
e
n
c
y
(
%
)
Vg=5V, VGH=12V
Vg=3V, VGH=20V
Fig. 9. Power conversion efciency.
supply. Simulation results verify that the boost converter is
accurately controlled by external resistors. The boost converter
not only displays stable operation even under substantial load
current variation but also provides power conversion efciency
higher than 90 %. The boost converter is capable of supplying
optimized power for a wide range of systems, especially for
TFT-LCD bias supply.
ACKNOWLEDGEMENT
This work was supported by the Korea Science and En-
gineering Foundation (KOSEF) grant funded by the Korea
government (MEST) (No. R01-2008-000-11056-0).
REFERENCES
[1] C. Shi, B. C. Walker, E. Zeisel, B. Hu, and G. H. McAllister, A highly
integrated power management IC for advanced mobile applications,
IEEE J. Solid-State Circuits, vol. 42, no. 8, pp. 1723-1731, Aug. 2007.
[2] A. I. Pressman, Switching Power Supply Design, second edition, McGraw-
Hill, 1998.
[3] C. F. Lee and P. K. T. Mok, A monolithic current-mode CMOS DC-DC
converter with on-chip current-sensing technique, IEEE J. Solid-State
Circuits, vol. 39, no. 1, pp. 3-14, Jan. 2004.
[4] LT1946: 1.2MHz boost DC/DC converter with 1.5A switch and soft-
start,2001, http://www.linear.com
[5] C. Y Leung, P. K. T. Mok, and K. N. Leung, A 1-V integrated current-
mode boost converter in standard 3.3/5-V CMOS technologies, IEEE J.
Solid-State Circuits, vol. 40, no. 11, pp. 2265-2274, Nov. 2005.
[6] J. Roh, High-performance error amplier for fast transient DC-DC
converters, IEEE Trans. Circuit and Syst, vol. 52, no. 9, pp. 591-595.
Sept. 2005.
[7] R. J. Baker, CMOS Circuit, Design, Layout, and Simulation, second
edition, WILEY-INTERSCIENCE, 2005.
[8] R. W. Erickson, and D. Maksimovic, Fundamentals of power electronics,
2nd edition, KAP, 2001.
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