27C16 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified

January 1989

27C16
16,384-Bit (2048 x 8) UV Erasable CMOS PROM
Military Qualified
General Description Features
The 27C16 is a high speed 16K UV erasable and electrically Y Access time down to 450 ns
reprogrammable CMOS EPROM, ideally suited for applica- Y Low CMOS power consumption
tions where fast turnaround, pattern experimentation and Ð Active Power: 26.25 mW max
low power consumption are important requirements. Ð Standby Power: 0.53 mW max (98% savings)
The 27C16 is packaged in a 24-pin dual-in-line package with Y Performance compatible to NSC800TM CMOS micro-
transparent lid. The transparent lid allows the user to ex- processor
pose the chip to ultraviolet light to erase the bit pattern. A Y Single 5V power supply
new pattern can then be written into the device by following Y Pin compatible to MM2716 and higher density EPROMs
the programming procedure. Y StaticÐno clocks required
This EPROM is fabricated with the reliable, high volume, Y TTL compatible inputs/outputs
time proven, P2CMOSTM silicon gate technology. Y TRI-STATEÉ output
The 27C16 specified on this data sheet is fully compliant Y Windowed DIP Package
with MIL-STD-883, Revision C. Y Specifications guaranteed over full military temperature
range (b55§ C to a 125§ C)

Block Diagram

Pin Names
A0 – A10 Addresses
CE Chip Enable
OE Output Enable
O0 –O7 Outputs
PGM Program
NC No Connect

TL/D/10329 – 1

TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.

NS800TM are P2CMOSTM trademarks of National Semiconductor Corporation.

C1995 National Semiconductor Corporation TL/D/10329 RRD-B30M105/Printed in U. S. A.

Connection Diagram
27C256 27C128 27C64 27C32 27C32 27C64 27C128 27256
27256 27128 2764 2732 2732 2764 27128 27256

VPP VPP VPP Dual-In-Line Package VCC VCC VCC

A12 A12 A12 27C16Q PGM PGM A14
A7 A7 A7 A7 VCC NC A13 A13
A6 A6 A6 A6 A8 A8 A8 A8
A5 A5 A5 A5 A9 A9 A9 A9
A4 A4 A4 A4 A11 A11 A11 A11
A3 A3 A3 A3 OE/VPP OE OE OE
A2 A2 A2 A2 A10 A10 A10 A10
A1 A1 A1 A1 CE CE CE CE
A0 A0 A0 A0 O7 O7 O7 O7
O0 O0 O0 O0 O6 O6 O6 O6
O1 O1 O1 O1 O5 O5 O5 O5
O2 O2 O2 O2 O4 O4 O4 O4
GND GND GND GND O3 O3 O3 O3

TL/D/10329 – 2
Top View
Note: Socket compatible EPROM pin configurations are shown in the blocks adjacent to the 27C16 pins.

Military Temp Range (b55§ C to a 125§ C) VCC e 5V g 10%

Parameter/Order Number Access Time (ns)

27C16Q450/883 450
27C16Q550/883 550

2
Absolute Maximum Ratings (Note 1) Operating Conditions (Note 9)
Temperature Under Bias b 55§ C to a 125§ C Temperature Range (Tcase) b 55§ C to a 125§ C
Storage Temperature b 65§ C to a 125§ C VCC Power Supply (Notes 2 and 3) 5V a 10%
All Input Voltages with VPP Power Supply (Note 3) VCC
Respect to Ground a 6.5V to b 0.3V
All Output Voltages with
Respect to Ground (Note 11) VCC a 0.3V to GND b0.3V
VPP Supply Voltage
with Respect to Ground
during Programming a 26.5V to b 0.3V
Power Dissipation 1.0W
Lead Temperature
(Soldering, 10 Seconds) 300§ C

READ OPERATION
DC Electrical Characteristics
Typ
Symbol Parameter Conditions Min Max Units
(Note 4)
ILI Input Load Current VIN e VCC or VIL 10 mA
ILO Output Leakage Current VOUT e VCC or VIL, CE e VIH 10 mA
ICC1 VCC Current (Active) OE e CE e VIL, f e 1 MHz
2 30 mA
(Note 3) TTL Inputs Inputs e VIH or VIL, I/O e 0 mA
ICC2 VCC Current (Active) OE e CE e VIL, f e 1 MHz mA
1 25
(Note 3) CMOS Inputs Inputs e VCC or GND, I/O e 0 mA
ICCSB1 VCC Current (Standby) CE e VIH
0.1 1 mA
TTL Inputs
ICCSB2 VCC Current (Standby) CE e VCC
0.01 0.1 mA
CMOS Inputs
VIL Input Low Voltage b 0.1 0.8 V
VIH Input High Voltage 2.2 VCC a 1 V
VOL1 Output Low Voltage IOL e 2.1 mA 0.45 V
VOH1 Output High Voltage IOH e b400 mA 2.4 V
VOL2 Output Low Voltage IOL e 0 mA 0.1 V
VOH2 Output High Voltage IOH e 0 mA 4.4 V

AC Electrical Characteristics
27C16
Symbol Parameter Conditions 450 550 Units
Min Max Min Max
tACC Address to Output Delay CE e OE e VIL 450 550 ns
tCE CE to Output Delay OE e VIL 450 550 ns
tOE OE to Output Delay CE e VIL 120 120 ns
tDF OE High to Output Float CE e VIL 0 100 0 100 ns
tOH Output Hold from Addresses, CE e OE e VIL
(Note 5) CE or OE, Whichever 0 0 ns
Occurred First

3
Capacitance TA e a 25§ C, f e 1 MHz (Note 5)
Symbol Parameter Conditions Typ Max Units
CIN Input Capacitance VIN e 0V 4 10 pF
COUT Output Capacitance VOUT e 0V 8 12 pF

AC Test Conditions
Output Load 1 TTL Gate and CL e 100 pF Timing Measurement Reference Level
Input Rise and Fall Times s 20 ns Inputs 1V and 2V
Input Pulse Levels 0.8V to 2.2V Outputs 0.8V and 2V

AC Waveforms (Notes 2, 8, 9, 10)

TL/D/10329 – 3
Note 1: Stresses above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 2: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
Note 3: VPP may be connected to VCC except during programming. ICC1 s the sum of the ICC active and IPP read currents.
Note 4: Typical values are for TA e a 25§ C and nominal supply voltages.
Note 5: This parameter is only sampled and is not 100% tested.
Note 6: OE may be delayed up to tACC b tOE after the falling edge of CE without impact on tACC.
Note 7: The tDF compare level is determined as follows:
High to TRI-STATE, the measured VOH1 (DC) b 0.10V
Low to TRI-STATE, the measured VOL1 (DC) a 0.10V
Note 8: TRI-STATE may be attained using OE or CE.
Note 9: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that a 0.1 mF ceramic capacitor be used on every
device between VCC and GND.
Note 10: The 27C16 requires one address transition after initial power-up to reset the outputs.
Note 11: The outputs must be restricted to VCC a 0.3V to avoid latch-up and device damage.

4
PROGRAMMING CHARACTERISTICS (Note 1)
DC Programming Characteristics (Notes 2 & 3)
(TA e a 25§ C g 5§ C, VCC e 5V g 10%, VPP e 25V g 1V)

Symbol Parameter Conditions Min Typ Max Units

ILI Input Current (for Any Input) VIN e VCC or GND 10 mA
IPP VPP Supply Current during CE/PGM e VIH 30 mA
Programming Pulse
ICC VCC Supply Current 10 mA
VIL Input Low Level b 0.1 0.8 V
VIH Input High Level 2.0 VCC a 1 V

AC Programming Characteristics (Notes 2 & 3)

(TA e a 25§ C g 5§ C, VCC e 5V g 10%, VPP e 25V g 1V)

Symbol Parameter Conditions Min Typ Max Units

tAS Address Setup Time 2 ms
tOES OE Setup Time 2 mS
tDS Data Setup Time 2 ms
tAH Address Hold Time 2 ms
tOEH OE Hold Time 2 ms
tDH Data Hold Time 2 ms
tDF Output Enable to Output Float Delay CE/PGM e VIL 0 120 ns
tOE Output Enable to Output Delay CE/PGM e VIL 100 ns
tPW Program Pulse Width 45 50 55 ms
tPRT Program Pulse Rise Time 5 ns
tPFT Program Pulse Fall Time 5 ns

AC Test Conditions
VCC 5V g 10% Timing Measurement Reference Level
VPP 25V g 1V Inputs 1V and 2V
Input Rise and Fall Times s 20 ns Outputs 0.8V and 2V
Input Pulse Levels 0.8V to 2.2V

5
Programming Waveforms VPP e 25V g 11V, VCC e 5V g 5% (Note 3)

TL/D/10329 – 4
Note: All times shown in parentheses are minimum and in ms unless otherwise specified.
Note 1: National’s standard product warranty applies only to devices programmed to specifications described herein.
Note 2: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. The 27C16 must not be inserted into or removed from a board
with VPP at 25V g 1V to prevent damage to the device.
Note 3: The maximum allowable voltage which may be applied to the VPP pin during programming is 26V. Care must be taken when switching the VPP supply to
prevent overshoot exceeding this 26V maximum specification. A 0.1 mF capacitor is required across VPP, VCC to GND to suppress spurious voltage transients
which may damage the device.

Functional Description
DEVICE OPERATION b) complete assurance that output bus contention will not
occur.
The six modes of operation of the 27C16 are listed in Table
I. It should be noted that all inputs for the six modes are at To most efficiently use these two control lines, it is recom-
TTL levels. The power supplies required are a 5V VCC and a mended that CE (pin 18) be decoded and used as the pri-
VPP. The VPP power supply must be at 25V during the three mary device selecting function, while OE (pin 20) be made a
programming modes, and must be at 5V in the other three common connection to all devices in the array and connect-
modes. ed to the READ line from the system control bus. This as-
sures that all deselected memory devices are in their low
Read Mode power standby modes and that the output pins are active
The 27C16 has two control functions, both of which must be only when data is desired from a particular memory device.
logically active in order to obtain data at the outputs. Chip
Programming
Enable (CE) is the power control and should be used for
device selection. Output Enable (OE) is the output control CAUTION: Exceeding 26.5V on pin 21 (VPP) will damage the
and should be used to gate data to the output pins, indepen- 27C16.
dent of device selection. Assuming that addresses are sta- Initially, and after each erasure, all bits of the 27C16 are in
ble, address access time (tACC) is equal to the delay from the ‘‘1’’ state. Data is introduced by selectively program-
CE to output (tCE). Data is available at the outputs tOE after ming ‘‘0s’’ into the desired bit locations. Although only ‘‘0s’’
the falling edge of OE, assuming that CE has been low and will be programmed, both ‘‘1s’’ and ‘‘0s’’ can be presented
addresses have been stable for at least tACC – tOE. The in the data word. The only way to change a ‘‘0’’ to a ‘‘1’’ is
27C16 requires one address transition after initial power-up by ultraviolet light erasure.
to reset the outputs. The 27C16 is in the programming mode when the VPP pow-
Standby Mode er supply is at 25V and OE is at VIH. It is required that a
0.1 mF capacitor be placed across VPP, VCC to ground to
The 27C16 has a standby mode which reduces the active
suppress spurious voltage transients which may damage
power dissipation by 98%, from 26.25 mW to 0.53 mW. The
the device. The data to be programmed is applied 8 bits in
27C16 is placed in the standby mode by applying a TTL high
parallel to the data output pins. The levels required for the
signal to the CE input. When in standby mode, the outputs
address and data inputs are TTL.
are in a high impedance state, independent of the OE input.
When the address and data are stable, a 50 ms, active high,
Output OR-Tying TTL program pulse is applied to the CE/PGM input. A pro-
Because 27C16s are usually used in larger memory arrays, gram pulse must be applied at each address location to be
National has provided a 2-line control function that accom- programmed. You can program any location at any timeÐ
modates this use of multiple memory connections. The either individually, sequentially, or at random. The program
2-line control function allows for: pulse has a maximum width of 55 ms. The 27C16 must not
a) the lowest possible memory power dissipation, and be programmed with a DC signal applied to the CE/PGM
input.

6
Functional Description (Continued)
Programming multiple 27C16s in parallel with the same data 12,000 mW/cm2 power rating. The 27C16 should be placed
can be easily accomplished due to the simplicity of the pro- within 1 inch of the lamp tubes during erasure. Some lamps
gramming requirements. Like inputs of the paralleled have a filter on their tubes which should be removed before
27C16s may be connected together when they are pro- erasure.
grammed with the same data. A high level TTL pulse ap- Note: The 27C16-550 may take up to 60 minutes for complete erasure to
plied to the CE/PGM input programs the paralleled 27C16s. occur.

Program Inhibit An erasure system should be calibrated periodically. The

distance from lamp to unit should be maintained at one inch.
Programming multiple 27C16s in parallel with different data The erasure time increases as the square of the distance. (If
is also easily accomplished. Except for CE/PGM, all like distance is doubled the erasure time increases by a factor of
inputs (including OE) of the parallel 27C16s may be com- 4.) Lamps lose intensity as they age. When a lamp is
mon. A TTL level program pulse applied to an 27C16’s CE/ changed, the distance has changed, or the lamp has aged,
PGM input with VPP at 25V will program that 27C16. A low the system should be checked to make certain full erasure
level CE/PGM input inhibits the other 27C16 from being is occurring. Incomplete erasure will cause symptoms that
programmed. can be misleading. Programmers, components, and even
Program Verify system designs have been erroneously suspected when in-
complete erasure was the problem.
A verify should be performed on the programmed bits to
determine whether they were correctly programmed. The SYSTEM CONSIDERATION
verify may be performed with VPP at 25V. VPP must be at The power switching characteristics of EPROMs require
VCC, except during programming and program verify. careful decoupling of the devices. The supply current, ICC,
ERASURE CHARACTERISTICS has three segments that are of interest to the system de-
signerÐthe standby current level, the active current level,
The erasure characteristics of the 27C16 are such that era-
and the transient current peaks that are produced on the
sure begins to occur when exposed to light with wave-
falling and rising edges of chip enable. The magnitude of
lengths shorter than approximately 4000 Angstroms (Ð). It
these transient current peaks is dependent on the output
should be noted that sunlight and certain types of fluores-
capacitance loading of the device. The associated transient
cent lamps have wavelengths in the 3000Ж4000Рrange.
voltage peaks can be suppressed by properly selected de-
Opaque labels should be placed over the 27C16 window to
coupling capacitors. It is recommended that a 0.1 mF ce-
prevent unintentional erasure. Covering the window will also
ramic capacitor be used on every device between VCC and
prevent temporary functional failure due to the generation of
photo currents. GND. This should be a high frequency capacitor of low in-
herent inductance. In addition, a 4.7 mF bulk electrolytic ca-
The recommended erasure procedure for the 27C16 is ex- pacitor should be used between VCC and GND for each
posure to short wave ultraviolet light which has a wave- eight devices. The bulk capacitor should be located near
length of 2537 Angstroms (Ð). The integrated dose (i.e., UV where the power supply is connected to the array. The pur-
intensity c exposure time) for erasure should be a minimum pose of the bulk capacitor is to overcome the voltage drop
of 15W-sec/cm2. The erasure time with this dosage is ap- caused by the inductive effects of the PC board traces.
proximately 21 minutes using an ultraviolet lamp with a
TABLE I. Mode Selection

Pins CE/PGM OE VP VCC Outputs

Mode (18) (20) (21) (24) (9 – 11, 13 – 17)
Read VIL VIL VCC 5 DOUT
Standby VIH Don’t Care VCC 5 Hi-Z
Program Pulsed VIL to VIH VIH 25 5 DIN
Program Verify VIL VIL 25 5 DOUT
Program Inhibit VIL VIH 25 5 Hi-Z
Output Disable X VIH VCC 5 Hi-Z

7
27C16 16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified
Physical Dimensions inches (millimeters) Lit. Ý 114700

24 Lead Ceramic Dual-In-Line Package (J)

Order Number 27C16Q450/883 or 27C16Q550/883
NS Package Number J24AQ

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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