9 STTH212 High voltage ultrafast diode Main product characteristics Features and benefits Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology Description The STTH212, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. Housed in axial, SMB, and SMC packages, this diode will reduce the losses in high switching freqency operations. Order codes I F(AV) 2 A V RRM 1200 V T j 175C V F (typ) 1.0 V t rr (max) 75 ns Part Number Marking STTH212 STTH212 STTH212RL STTH212 STTH212U U22 STTH212S S12 K A SMB STTH212U SMC STTH212S DO-201AD STTH212 www.st.com 1 Electrical characteristics STTH212 2/9 1 Electrical characteristics To evaluate the conduction losses use the following equation: P = 1.26 x I F(AV) + 0.12 I F 2 (RMS) Table 1. Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 1200 V V (RMS) RMS voltage 850 V I F(AV) Average forward current = 0.5 DO-201AD T l = 105C 2 A SMB T l = 90C SMC T l = 105C I F(RMS) RMS forward current DO-201AD, SMB, SMC 10 A I FSM Forward surge current t p = 8.3ms DO-201AD, SMB, SMC 40 A T stg Storage temperature range -50 to + 175 C T j Maximum operating junction temperature 175 C Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-l) Junction to lead L = 10 mm DO-201AD 20 C/W SMB 25 SMC 20 R th(j-a) Junction to ambient L = 10 mm DO-201AD 75 C/W Table 3. Static Electrical Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I R Reverse leakage current T j = 25C V R = V RRM 10 A T j = 125C 100 V F Forward voltage drop T j = 25C I F = 2A 1.75 V T j = 125C 1.07 1.50 T j = 150C 1.0 - STTH212 1 Electrical characteristics 3/9 Table 4. Dynamic Electrical Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time T j = 25C I F = 1A dI F /dt = -100 A/s V R =30V 75 ns t fr Forward recovery time T j = 25C I F = 2A dI F /dt = 50 A/s V FR = 1.1 x V Fmax 500 ns V FP Forward recovery voltage 30 V Figure 1. Conduction losses versus average forward current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, L Leads = 10mm) Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, S CU = 1cm 2 ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 T =tp/T tp I (A) F(AV) P(W) = 0.05 = 0.1 = 0.2 = 1 = 0.5 0 5 10 15 20 25 30 35 40 45 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 I (A) FM V (V) FM T=125C (typical values) j T=25C (maximum values) j T=125C (maximum values) j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 DO-201AD L leads =10mm Z th(j-a) /R th(j-a) t p (s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 SMB S Cu =1cm Z th(j-a) /R th(j-a) t p (s) 1 Electrical characteristics STTH212 4/9 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4, S CU = 1cm 2 ) Figure 6. Reverse recovery current versus dI F /dt (typical values) Figure 7. Reverse recovery time versus dI F /dt (typical values) Figure 8. Reverse recovery charges versus dI F /dt (typical values) Figure 9. Softness factor versus dI F /dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 SMC S Cu =1cm Z th(j-a) /R th(j-a) t p (s) 0 1 2 3 4 5 6 7 8 9 10 11 0 20 40 60 80 100 120 140 160 180 200 VR=600V Tj=125C I F =2 x I F(AV) I F =2 x I F(AV) I F =0.5 xI F(AV) I F =0.5 xI F(AV) I F =I F(AV) I F =I F(AV) I (A) RM dl /dt(A/s) F 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 350 400 450 500 V R =600V T j =125C I F =0.5 x I F(AV) I F =2 x I F(AV) I F =I F(AV) I F =I F(AV) t rr (ns) dl /dt(A/s) F 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 450 500 Q rr (nC) V R =600V T j =125C I F =I F(AV) I F =0.5 x I F(AV) I F =2 x I F(AV) dl /dt(A/s) F 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 25 50 75 100 125 150 175 200 225 250 S FACTOR I F =I F(AV) V R =600V T j =125C dl /dt(A/s) F 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 25 50 75 100 125 T j (C) I RM Q RR S FACTOR I F =I F(AV) V R =600V Reference:T j =125C STTH212 1 Electrical characteristics 5/9 Figure 11. Transient peak forward voltage versus dI F /dt (typical values) Figure 12. Forward recovery time versus dI F /dt (typical values) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance versus lead length Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, e CU = 35m) Figure 16. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, e cu = 35 m) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 10 20 30 40 50 60 70 80 90 100 V (V) FP I F =I F(AV) T j =125C dl /dt(A/s) F 200 220 240 260 280 300 320 340 360 380 400 420 0 20 40 60 80 100 t (ns) FR I F =I F(AV) V FR =1.1 x V F m ax. T j =125C dl /dt(A/s) F 1 10 100 1 10 100 1000 C(pF) V (V) R F=1MHz V osc =30mV RMS T j =25C 0 10 20 30 40 50 60 70 80 90 100 5 10 15 20 25 R (C/W) th(j-a) L (mm) Leads DO201-AD R th(j-a) R th(j-l) 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 R (C/W) th(j-a) S (cm ) Cu 2 DO-201AD 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R (C/W) th(j-a) S (cm ) Cu 2 SMB SMC 2 Package mechanical data STTH212 6/9 2 Package mechanical data Table 5. SMB dimensions REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 Figure 17. SMB references to dimensions table Figure 18. SMB footprint dimensions (in millimetres) E C L E1 D A1 A2 b 1.64 6.10 2.23 2.30 2.23 STTH212 2 Package mechanical data 7/9 Note: 1 The lead diameter D is not controlled over zone E. 2 The minimum length which must stay straight between the right angles after bending is 15 mm (0.59 inch). Table 6. SMC dimensions REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 E 7.75 8.15 0.305 0.321 E1 6.60 7.15 0.260 0.281 E2 4.40 4.70 0.173 0.185 D 5.55 6.25 0.218 0.246 L 0.75 1.60 0.030 0.063 Figure 19. SMC references to dimensions table Figure 20. SMC footprint dimensions (in millimetres) Table 7. DO-201AD dimensions REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A - 9.5 - 0.37 B 25.4 - 1.00 - C - 5.3 - 0.21 D - 1.3 - 0.051 E - 1.25 - 0.048 E C L E2 E1 D A1 A2 b 4.25 8.65 2.20 3.30 2.20 C D A E E Note 2 Note 1 Note 1 B B 3 Ordering information STTH212 8/9 3 Ordering information 4 Revision history Part Number Marking Package Weight Base qty Delivery mode STTH212 STTH212 DO-201AD 1.12 g 600 Ammopack STTH212RL STTH212 1900 Tape & reel STTH212U U22 SMB 0.11 g 2500 Tape & reel STTH212S S12 SMC 0.243 g 2500 Tape & reel Date Revision Description of Changes 28-Jun-2005 1 First issue. STTH212 4 Revision history 9/9 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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