Y Y ZXXJ Y Y Yna: References
Y Y ZXXJ Y Y Yna: References
Y Y ZXXJ Y Y Yna: References
m
(t - T) = C(co) e-*
2TT J_OO
1 r
m(
f
~
T
) = =-
+ 0
ZTT JOO
+ 0
+ 0
j'daj
PROPOSED GUNN-EFFECT SWITCH*
The possibility of using a Gunn device as a switch similar to
a tunnel diode is investigated theoretically. Three switching
types are obtained, one of which leads to the homogeneous
high-field state with predicted switching times of a few \R
N
\C
(corresponding to the homogeneous sample).
For Gunn-effect semiconductors, various kinds of application
possibilities have been published. However, to use the Gunn
device according to its typical current/voltage characteristic
as a switch similar to a tunnel diode has not yet been pro-
posed, and this will be investigated theoretically in this letter.
The problem is illustrated using the familiar static
characteristic () according to Fig. 1. A load line is assumed
which intersects the characteristic at three points (i), (ii), (iii).
Now, is it possible to switch the device from the stable point
(i) to point (iii) by applying a short trigger pulse of amplitude
{E'
B
E
B
)L1 Such a transition is expected, since point (iii),
lying again in a range of positive differential mobility, should
be stable (or at least quasistable) against domain formation.
During this process, however, the sample field has to go
through the range of negative slope, and hence a high-field
domain should build up. When such a domain has fully
formed, the sample is described by its dynamic characteristic
1
and the working point is given by point (iv), E
x
= E
xaa
being
the field strength outside the domain. After reaching the
anode, the domain will be quenched, and E
x
increases until
the initial working point (i) has been re-established.
In order to investigate the detailed behaviour of the device,
one has to start with equations which describe the dynamical
properties of the high-field domains :
2> 3
190
* Supported in part by the Ministry of Defence, Federal Republic of Germany
ELECTRONICS LETTERS 17th May 1968 Vol. 4 No. 10
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