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    P0903BSG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Uploaded by

    Andika Wicaksana
    This document summarizes the specifications of the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor in a TO-263 package. Key specifications include: - Maximum drain current of 50A continuous, 200A pulsed - On-state drain-source resistance between 7.5-16 mOhms - Gate threshold voltage between 1-3V - Drain-source breakdown voltage of 25V minimum It provides detailed electrical characteristics, thermal resistance ratings, and mechanical dimensions for the transistor.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    P0903BSG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Uploaded by

    Andika Wicaksana
    421 views5 pages
    This document summarizes the specifications of the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor in a TO-263 package. Key specifications include: - Maximum drain current of 50A continuous, 200A pulsed - On-state drain-source resistance between 7.5-16 mOhms - Gate threshold voltage between 1-3V - Drain-source breakdown voltage of 25V minimum It provides detailed electrical characteristics, thermal resistance ratings, and mechanical dimensions for the transistor.

    Original Description:

    N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Original Title

    P0903BSG

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    © Attribution Non-Commercial (BY-NC)

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    This document summarizes the specifications of the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor in a TO-263 package. Key specifications include: - Maximum drain current of 50A continuous, 200A pulsed - On-state drain-source resistance between 7.5-16 mOhms - Gate threshold voltage between 1-3V - Drain-source breakdown voltage of 25V minimum It provides detailed electrical characteristics, thermal resistance ratings, and mechanical dimensions for the transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    421 views5 pages

    P0903BSG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor

    Uploaded by

    Andika Wicaksana
    This document summarizes the specifications of the NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor in a TO-263 package. Key specifications include: - Maximum drain current of 50A continuous, 200A pulsed - On-state drain-source resistance between 7.5-16 mOhms - Gate threshold voltage between 1-3V - Drain-source breakdown voltage of 25V minimum It provides detailed electrical characteristics, thermal resistance ratings, and mechanical dimensions for the transistor.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    NIKO-SEM N-Channel Logic Level Enhancement P0903BSG

    Mode Field Effect Transistor TO-263 (D2PAK)


    Lead-Free

    D
    PRODUCT SUMMARY
    1. GATE
    V(BR)DSS RDS(ON) ID 2. DRAIN
    G
    25 9.5mΩ 50A 3. SOURCE

    S
    ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Gate-Source Voltage VGS ±20 V
    TC = 25 °C 50
    Continuous Drain Current ID
    TC = 100 °C 35
    1
    A
    Pulsed Drain Current IDM 200
    Avalanche Current IAR 40
    Avalanche Energy L = 0.1mH EAS 250
    2
    mJ
    Repetitive Avalanche Energy L = 0.05mH EAR 8.6
    TC = 25 °C 50
    Power Dissipation PD W
    TC = 100 °C 30
    Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150
    1
    °C
    Lead Temperature ( /16” from case for 10 sec.) TL 275

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RθJC 2.5
    Junction-to-Ambient RθJA 62.5 °C / W
    Case-to-Heatsink RθCS 0.6
    1
    Pulse width limited by maximum junction temperature.
    2
    Duty cycle ≤ 1％

    ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.6 3
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
    VDS = 20V, VGS = 0V 25
    Zero Gate Voltage Drain Current IDSS µA
    VDS = 20V, VGS = 0V, TC = 125 °C 250

    Jun-29-2004
    1
    NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
    Mode Field Effect Transistor TO-263 (D2PAK)
    Lead-Free

    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 50 A

    Drain-Source On-State VGS = 4.5V, ID = 20A 11 16


    RDS(ON) mΩ
    Resistance1 VGS = 10V, ID = 25A 7.5 9.5
    Forward Transconductance1 gfs VDS = 10V, ID = 25A 32 S
    DYNAMIC
    Input Capacitance Ciss 1200 1800
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 600 1000 pF
    Reverse Transfer Capacitance Crss 350 500
    2
    Total Gate Charge Qg 25 50
    Gate-Source Charge 2
    Qgs VDS = 10V, VGS = 10V, 15 nC
    Gate-Drain Charge 2
    Qgd ID = 25A 10
    2
    Turn-On Delay Time td(on) 6 16
    Rise Time2 tr VDS = 15V, RL = 1Ω 120 250
    nS
    Turn-Off Delay Time2 td(off) ID ≅ 50A, VGS = 10V, RGEN = 24Ω 40 90

    Fall Time2 tf 105 200


    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
    Continuous Current IS 50
    A
    Pulsed Current3 ISM 150
    Forward Voltage1 VSD IS = 25A, VGS = 0V 0.9 1.3 V
    Reverse Recovery Time trr 70 nS
    Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / µS 200 A
    Reverse Recovery Charge Qrr 0.043 µC
    1
    Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
    2
    Independent of operating temperature.
    3
    Pulse width limited by maximum junction temperature.

    REMARK: THE PRODUCT MARKED WITH “P0903BSG”, DATE CODE or LOT #


    Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

    Jun-29-2004
    2
    NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
    Mode Field Effect Transistor TO-263 (D2PAK)
    Lead-Free

    TYPICAL CHARACTERISTICS

    Jun-29-2004
    3
    NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
    Mode Field Effect Transistor TO-263 (D2PAK)
    Lead-Free

    Jun-29-2004
    4
    NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
    Mode Field Effect Transistor TO-263 (D2PAK)
    Lead-Free

    TO-263 (D2PAK) MECHANICAL DATA

    mm mm
    Dimension Dimension
    Min. Typ. Max. Min. Typ. Max.

    A 14.5 15 15.8 H 1.0 1.5 1.8

    B 4.2 4.7 I 9.8 10.3

    C 1.20 1.35 J 6.5

    D 2.8 K 1.5

    E 0.3 0.4 0.5 L 0.7 1.4

    F -0.102 0.203 M 4.83 5.08 5.33

    G 8.5 9 9.5 N

    A
    E
    B
    C

    H G
    L
    3
    J

    M
    2
    I

    Jun-29-2004
    5

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