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    Aod 4186

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    dragon-red0816
    The AOD4186 is an N-channel enhancement mode field effect transistor suitable for low voltage inverter applications. It combines trench MOSFET technology with a low resistance package, providing extremely low RDS(ON) of less than 15mΩ at 10V gate voltage. Key features include a drain-source voltage rating of 40V, continuous drain current of 35A, and RoHS and halogen free compliance.

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    Aod 4186

    Uploaded by

    dragon-red0816
    253 views6 pages
    The AOD4186 is an N-channel enhancement mode field effect transistor suitable for low voltage inverter applications. It combines trench MOSFET technology with a low resistance package, providing extremely low RDS(ON) of less than 15mΩ at 10V gate voltage. Key features include a drain-source voltage rating of 40V, continuous drain current of 35A, and RoHS and halogen free compliance.

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    The AOD4186 is an N-channel enhancement mode field effect transistor suitable for low voltage inverter applications. It combines trench MOSFET technology with a low resistance package, providing extremely low RDS(ON) of less than 15mΩ at 10V gate voltage. Key features include a drain-source voltage rating of 40V, continuous drain current of 35A, and RoHS and halogen free compliance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    253 views6 pages

    Aod 4186

    Uploaded by

    dragon-red0816
    The AOD4186 is an N-channel enhancement mode field effect transistor suitable for low voltage inverter applications. It combines trench MOSFET technology with a low resistance package, providing extremely low RDS(ON) of less than 15mΩ at 10V gate voltage. Key features include a drain-source voltage rating of 40V, continuous drain current of 35A, and RoHS and halogen free compliance.

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    AOD4186

    N-Channel Enhancement Mode Field Effect Transistor


    General Description

    Features

    The AOD4186 combines advanced trench MOSFET


    technology with a low resistance package to provide
    extremely low RDS(ON). This device is ideal for low
    voltage inverter applications.

    VDS (V) =40V


    ID = 35A

    (VGS = 10V)

    RDS(ON) < 15m

    (VGS = 10V)

    RDS(ON) < 19m

    (VGS = 4.5V)

    - RoHS Compliant
    - Halogen Free

    100% UIS Tested!


    100% R g Tested!

    TO-252
    D-PAK

    Top View
    D

    Bottom View

    Absolute Maximum Ratings TA=25C unless otherwise noted


    Parameter
    Symbol
    VDS
    Drain-Source Voltage
    VGS
    Gate-Source Voltage
    TC=25C

    Continuous Drain
    Current G

    Pulsed Drain Current C

    V
    A

    70
    10

    IDSM

    TA=70C

    20
    27

    IDM

    TA=25C

    Continuous Drain
    Current

    Units
    V

    35

    ID

    TC=100C

    Maximum
    40

    Avalanche Current C

    IAR

    24

    Repetitive avalanche energy L=0.1mH C

    EAR

    29

    mJ

    TC=25C
    Power Dissipation

    TC=100C
    TA=25C

    Power Dissipation A

    Junction and Storage Temperature Range

    Alpha & Omega Semiconductor, Ltd.

    2.5

    1.6

    TJ, TSTG

    -55 to 175

    Symbol
    t 10s
    Steady-State
    Steady-State

    25

    PDSM

    TA=70C

    Thermal Characteristics
    Parameter
    Maximum Junction-to-Ambient A
    Maximum Junction-to-Ambient A D
    Maximum Junction-to-Case

    50

    PD

    RJA
    RJC

    Typ
    16.7
    40
    2.5

    Max
    25
    50
    3

    Units
    C/W
    C/W
    C/W

    www.aosmd.com

    AOD4186

    Electrical Characteristics (T J=25C unless otherwise noted)


    Parameter

    Symbol

    STATIC PARAMETERS
    BVDSS
    Drain-Source Breakdown Voltage

    Conditions

    Min

    ID=250A, VGS=0V
    VDS=40V, VGS=0V

    IGSS

    Gate-Body leakage current

    VDS=0V, VGS= 20V

    VGS(th)
    ID(ON)

    Gate Threshold Voltage

    VDS=VGS ID=250A

    1.7

    On state drain current

    VGS=10V, VDS=5V

    100

    RDS(ON)

    Static Drain-Source On-Resistance

    TJ=55C

    VGS=10V, ID=20A
    TJ=125C
    VGS=4.5V, ID=15A
    Forward Transconductance

    VSD

    Diode Forward Voltage


    IS=1A,VGS=0V
    Maximum Body-Diode Continuous Current

    VDS=5V, ID=20A

    DYNAMIC PARAMETERS
    Ciss
    Input Capacitance
    Coss

    Output Capacitance

    Crss

    Reverse Transfer Capacitance

    Rg

    Gate resistance

    SWITCHING PARAMETERS
    Qg(10V) Total Gate Charge
    Qg(4.5V) Total Gate Charge
    Qgs

    Gate Source Charge

    Qgd

    Gate Drain Charge

    tD(on)

    Turn-On DelayTime

    tr

    Turn-On Rise Time

    tD(off)

    Turn-Off DelayTime

    tf

    Turn-Off Fall Time

    Units
    V

    Zero Gate Voltage Drain Current

    gFS

    Max

    40

    IDSS

    IS

    Typ

    VGS=0V, VDS=20V, f=1MHz


    VGS=0V, VDS=0V, f=1MHz

    VGS=10V, VDS=20V, ID=20A

    2.2

    100

    nA

    2.7

    V
    A

    12.4

    15

    20

    24

    14.5

    19

    m
    m

    60
    0.75

    S
    1

    60

    780

    980

    1200

    pF

    90

    130

    170

    pF

    48

    80

    110

    pF

    1.9

    3.8

    5.7

    13.5

    17

    20

    nC

    11

    nC

    2.5

    nC

    2.7

    4.5

    6.3

    nC

    VGS=10V, VDS=20V, RL=1.0,


    RGEN=3

    ns

    12

    ns

    26

    ns

    ns

    trr

    Body Diode Reverse Recovery Time

    IF=20A, dI/dt=500A/s

    12

    15

    Qrr

    Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s

    24

    31

    38

    ns
    nC

    A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power
    dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the
    user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
    B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
    limit for cases where additional heatsinking is used.
    C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ
    =25C.
    D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
    E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
    F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
    maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating.
    G. The maximum current rating is limited by bond-wires.
    H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
    Rev 1 : May-09
    COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
    OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
    FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

    AOD4186

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    80

    80
    6V

    10V

    VDS=5V

    4.5V

    60

    60

    ID(A)

    ID (A)

    4V
    40

    40
    125C
    20

    20

    25C

    VGS=3.5V
    0

    0
    0

    20

    Normalized On-Resistance

    18
    RDS(ON) (m)

    VGS(Volts)
    Figure 2: Transfer Characteristics (Note E)

    VDS (Volts)
    Fig 1: On-Region Characteristics (Note E)

    VGS=4.5V

    16
    14

    VGS=10V

    12
    10

    1.8

    VGS=10V
    ID=20A

    1.6

    17
    5
    2
    VGS=4.5V10

    1.4
    1.2

    ID=15A

    1
    0.8

    8
    0

    10

    15
    20
    25
    30
    ID (A)
    Figure 3: On-Resistance vs. Drain Current and
    Gate Voltage (Note E)

    25

    50

    75

    100

    125

    150

    175

    200

    Temperature (C)
    0
    Figure 4: On-Resistance vs. Junction Temperature
    18
    (Note E)

    40

    1.0E+02
    ID=20A

    1.0E+01

    35

    25

    IS (A)

    RDS(ON) (m)

    40

    1.0E+00

    30
    125C

    20

    125C

    1.0E-01
    1.0E-02

    25C

    1.0E-03
    25C

    15

    1.0E-04
    1.0E-05

    10
    2

    10

    VGS (Volts)
    Figure 5: On-Resistance vs. Gate-Source Voltage
    (Note E)

    Alpha & Omega Semiconductor, Ltd.

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    VSD (Volts)
    Figure 6: Body-Diode Characteristics (Note E)

    www.aosmd.com

    AOD4186

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    10

    1500
    VDS=20V
    ID=20A

    1200
    Capacitance (pF)

    VGS (Volts)

    900

    600
    Coss

    300

    0
    0

    10
    15
    Qg (nC)
    Figure 7: Gate-Charge Characteristics

    Ciss

    20

    Crss
    0

    10

    20
    30
    VDS (Volts)
    Figure 8: Capacitance Characteristics

    40

    200

    100.0

    10.0

    10s

    160

    100s
    DC

    1ms
    10ms

    1.0

    TJ(Max)=175C
    TC=25C
    0.1
    0.01

    0.1

    120

    17
    TJ(Max)=175C
    TC=25C 5

    80

    2
    10

    40

    1
    VDS (Volts)

    10

    100

    10
    D=Ton/T
    TJ,PK=TC+PDM.ZJC.RJC

    0
    0.0001

    0.001

    0.01

    0.1

    10

    Pulse Width (s)


    18
    Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

    Figure 9: Maximum Forward Biased Safe


    Operating Area (Note F)

    ZJC Normalized Transient


    Thermal Resistance

    Power (W)

    ID (Amps)

    10s
    RDS(ON)
    limited

    In descending order
    D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

    40

    RJC=3C/W
    1

    PD

    0.1
    Single Pulse

    Ton
    0.01
    0.00001

    0.0001

    0.001

    0.01

    0.1

    10

    100

    Pulse Width (s)


    Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

    AOD4186

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    100

    Power Dissipation (W)

    IAR(A) Peak Avalanche Current

    60

    TA=25C

    TA=100C
    TA=150C

    50
    40
    30
    20
    10

    TA=125C
    0

    10
    0.000001

    0.00001
    0.0001
    0.001
    Time in avalanche, tA (s)
    Figure 12: Single Pulse Avalanche capability (Note
    C)

    25

    50

    75

    100

    150

    175

    10000

    60

    TA=25C

    50

    1000
    40

    Power (W)

    Current rating ID(A)

    125

    TCASE (C)
    Figure 13: Power De-rating (Note F)

    30

    17
    5
    2
    10

    100

    20

    10
    10

    1
    0.00001

    0
    0

    25

    50

    75

    100

    125

    150

    175

    TCASE (C)
    Figure 14: Current De-rating (Note F)

    ZJA Normalized Transient


    Thermal Resistance

    10

    0.1

    10

    1000

    Pulse Width (s)


    18
    Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

    In descending order
    D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

    D=Ton/T
    TJ,PK=TA+PDM.ZJA.RJA
    1

    0.001

    40

    RJA=50C/W

    0.1
    Single Pulse

    PD

    0.01

    Ton
    0.001
    0.00001

    0.0001

    0.001

    0.01

    0.1

    10

    100

    1000

    Pulse Width (s)


    Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

    Alpha & Omega Semiconductor, Ltd.

    www.aosmd.com

    AOD4186

    Gate Charge Test Circuit & W aveform


    Vgs
    Qg
    10V

    + Vds

    VDC

    Qgs

    Qgd

    VDC

    DUT
    Vgs
    Ig

    Charge

    Resistive Switching Test Circuit & Waveforms


    RL
    Vds
    Vds

    Vgs

    90%

    + Vdd

    DUT

    VDC

    Rg

    10%

    Vgs

    Vgs

    t d(on)

    tr

    t d(off)

    t on

    tf
    t off

    Unclamped Inductive Switching (UIS) Test Circuit & Waveforms


    L

    E AR= 1/2 LIAR

    Vds

    BVDSS

    Vds

    Id

    + Vdd

    Vgs

    Vgs

    I AR

    VDC

    Rg

    Id

    DUT
    Vgs

    Vgs

    Diode Recovery Test Circuit & Waveforms


    Q rr = - Idt

    Vds +
    DUT
    Vgs

    Vds Isd

    Isd

    Vgs
    Ig

    Alpha & Omega Semiconductor, Ltd.

    + Vdd

    t rr

    dI/dt
    I RM
    Vdd

    VDC

    IF

    Vds

    www.aosmd.com

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