Irfp460: N - Channel 500V - 0.22 - 20 A - To-247 Powermesh Mosfet

IRFP460
N - CHANNEL 500V - 0.22 - 20 A - TO-247

PowerMESH MOSFET
TYPE
IRFP460
V DSS
R DS(on)
ID
500 V
< 0.27
20 A
TYPICAL RDS(on) = 0.22

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
companys consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
TO-247
APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS

Symbol
V DS
V DGR
Value
Un it
Drain-source Voltage (V GS = 0)
Parameter
500
Drain- gate Voltage (R GS = 20 k)
500
G ate-source Voltage
20
ID
Drain Current (continuous) at Tc = 25 o C
20
ID
Drain Current (continuous) at Tc = 100 oC
13
Drain Current (pulsed)
80
V GS
I DM ()
P tot
T otal Dissipation at Tc = 25 C
Derating Factor
dv/dt( 1 )
Ts tg
Tj
Peak Diode Recovery voltage slope

Storage Temperature
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
September 1998
250
W /o C
3.5
V/ns
-65 to 150
150
( 1) ISD 20 , di/dt 160 A/s, VDD V(BR)DSS, Tj TJMAX
1/8
IRFP460
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case

Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.5
30
0.1
300
C/W
oC/W
o
C/W
o
C
Max Valu e
Unit
20
1000
mJ
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)
E AS
Single Pulse Avalanche Energy

o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions

I D = 250 A
V DS = Max Rating
Zero G ate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
T yp.
Max.
500
V GS = 0
I DSS
Min.
Unit
V
T c = 125 oC
V GS = 20 V
10
100
A
A
100
nA
ON ()
Symbo l
Parameter
Test Con ditions

ID = 250 A
V GS(th)
Gate Threshold
Voltage
R DS(on)
Static Drain-source O n V GS = 10V

Resistance
I D(o n)
V DS = V GS
Min.
T yp.
Max.
Unit
0.22
0.27
ID = 12 A
20
On State Drain Current V DS > ID(o n) x R DS(on )ma x

V GS = 10 V
DYNAMIC
Symbo l
g f s ()
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 12 A
V GS = 0
Min.
T yp.
13
Max.
Unit
S
4200
500
50
pF
pF
pF
IRFP460
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 250 V ID = 10 A
VGS = 10 V
R G = 4.7
(see test circuit, figure 1)
Qg
Q gs
Q gd
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
V DD = 400 V ID = 20 A V GS = 10 V
Min.
T yp.
Max.
32
15
Unit
ns
ns
100
21
37
130
nC
nC
nC
T yp.
Max.
Unit
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
Min.
20
25
47
V DD = 400 V ID = 20 A
R G = 4.7 V GS = 10 V
ns
ns
ns
SOURCE DRAIN DIODE

Symbo l
ISD
I SDM ()
V SD ()
t rr
Q rr
I RRM
Parameter
Test Con ditions
Min.
T yp.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 20 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 20 A di/dt = 100 A/s

T j = 150 o C
V DD = 100 V
V GS = 0
Max.
Unit
20
80
A
A
1.6
700
ns
25
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

() Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
IRFP460
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
IRFP460
Normalized Gate Threshold Voltage vs
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
IRFP460
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
6/8
IRFP460
TO-247 MECHANICAL DATA

mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
4.7
5.3
0.185
0.209
2.2
2.6
0.087
0.102
0.4
0.8
0.016
0.031
1.4
0.039
0.055
F3
2.4
0.079
0.094
F4
3.4
0.118
0.134
10.9
0.429
15.3
15.9
0.602
0.626
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
7/8
IRFP460
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
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Irfp460: N - Channel 500V - 0.22 - 20 A - To-247 Powermesh Mosfet

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IRFP460

N - CHANNEL 500V - 0.22 - 20 A - TO-247

TYPICAL RDS(on) = 0.22

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Drain- gate Voltage (R GS = 20 k)

Drain Current (continuous) at Tc = 25 o C

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Peak Diode Recovery voltage slope

() Pulse width limited by safe operating area

( 1) ISD 20 , di/dt 160 A/s, VDD V(BR)DSS, Tj TJMAX

Thermal Resistance Junction-case

Avalanche Current, Repetitive or Not-Repetitive

Single Pulse Avalanche Energy

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Test Con ditions

Test Con ditions

Static Drain-source O n V GS = 10V

On State Drain Current V DS > ID(o n) x R DS(on )ma x

Test Con ditions

V DS > ID(o n) x R DS(on )ma x

Test Con ditions

Total Gate Charge

Test Con ditions

SOURCE DRAIN DIODE

Test Con ditions

I SD = 20 A di/dt = 100 A/s

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

TO-247 MECHANICAL DATA

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