Silvaco PDF

Process Modeling
ROCHESTER INSTITUTE OF TECHNOLOGY

MICROELECTRONIC ENGINEERING
2D Process Modeling with Silvaco

ATHENA
Dr. Lynn Fuller
Webpage: http://people.rit.edu/lffeee
Microelectronic Engineering
Rochester Institute of Technology
82 Lomb Memorial Drive
Rochester, NY 14623-5604
Tel (585) 475-2035
Fax (585) 475-5041
Email: Lynn.Fuller@rit.edu
Department webpage: http://www.microe.rit.edu
November 15, 2015, Dr. Lynn Fuller, Professor
11-15-2010 silvaco.ppt
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Process Modeling
OUTLINE
Introduction
Tips (Printing tonyplot)
Getting Started
Printing Deckbuild File
Deckbuild Example
Tonyplot for Example
Summary
References
Homework
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Process Modeling
INTRODUCTION
SUPREM Stanford University PRocess Engineering Module, 1977
ATHENA is Silvaco, Incs. version of SUPREM. ATHENA is
normally used in conjunction with VWF Interactive tools. These
include DECKBUILD, TONYPLOT,DEVEDIT, MASKVIEWS and
OPTIMIZER. DECKBUILD provides an interactive run time
environment. TONYPLOT supplies scientific visualization
capabilities. DEVEDIT is an interactive tool for structure and mesh
specification and refinement, and MASKLVIEWS is an IC Layout
Editor. The OPTIMIZER supports black box optimizations across
multiple simulators. ATHENA is frequently used in conjunction
with ATLAS device simulator. ATHENA predicts the physical
structure that result from processing. These physical structures are
used as input by ATLAS, which then predicts the electrical
characteristics associated with specified bias conditions.
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Process Modeling
TIPS AND PRINTING TONYPLOT

Tips: The software runs on a UNIX computer. The commands are
case sensitive. The pull down menus are often enabled with a right
mouse click (RMC) and then the desired selection is made with a
left mouse click (LMC).
Example: once you run ATHENA you most often generate a graph
of the results using the software TONYPLOT. To print the plot you
need to do the following:
Pull down Print on the top banner (right mouse click, RMC)
Select Printers (left mouse click, LMC)
Pull down Queue (right mouse click, RMC)
Select prec2 (left mouse click, LMC)
Update
Save Set Up (click on icon at bottom right)
Pull down Print on top banner (RMC)
Select Print view (LMC)
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Process Modeling
GETTING STARTED
To get started you need to invoke the DECKBUILD application.
DECKBUILD will allow you to specify the process steps you want to
analyze.
(1,0)
(0,0)
X
Open terminal window (shell)
Type deckbuild
commands (RMC) select mesh define
(0,2) Y
commands select mesh initialize (LMC)
commands select process (RMC) deposit (LMC)
select parameters for nitride layer
commands select process (RMC) select implant (LMC)
select parameters for ion implant
tonyplot
quit Rochester Institute of Technology
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Process Modeling
DECKBUILD EXAMPLE
go athena
#comment lines start with #
#near location 0m on the x line set grid approximately 0.1 m
#near location 1m on the x line set grid approximately 0.1 m
line x loc=0.00 space=0.1
line x loc=1.00 space=0.1
#near location 0m on the y line set grid approximately 0.01 m
#near location 2m on the y line set grid approximately 0.01 m
line y loc=0.00 space=0.01
line y loc=2.00 space=0.01
#
init silicon phosphorous resistivity=15 orientation=100
#change nitride thickness to investigate implant penetration
deposit nitride thick=0.30
# dual Pearson model is SIMS verified empirical model
implant boron dose=8.0e12 energy=100 tilt=0 \
rotation=0 crystal lat.ratio1=1.0 lat.ratio2=1.0
#
tonyplot
quit
Microelectronic
Engineering
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Process Modeling
TONY PLOT FOR EXAMPLE
3000 Nitride
2500 Nitride

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Process Modeling
SUMMARY
Silvaco ATHENA (SUPREM) analysis allows for the calculation of
resultant impurity concentrations, layer thickness, and much more
for processes such as oxidation, diffusion, implantation and
deposition for temperatures above 800 C.

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Process Modeling
SILVACO ATHENA SIMULATIONS OF D/S IMPLANT

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Process Modeling
EXTRACT
The extract command provides a way to output important device
parameters such as oxide thickness, junction depth, sheet
resistance, surface concentration, and threshold voltage. These
results are available in the run dialog window and in the
results.final file. These commands can be placed anywhere in the
input file. A few extract commands are shown below:
extract name="Source Oxide Thickness" thickness material="SiO~2" \
mat.occno=1 x.val=2.0
extract name="Final Source xj" xj material="Silicon" mat.occno=1 x.val=2.0 \
junc.occno=1
extract name="p-type Sheet Rs" p.sheet.res material="Silicon" mat.occno=1 \
x.val=2.0 region.occno=1
extract name="Surface Concentration" surf.conc impurity="Net Doping" \
material="Silicon" mat.occno=1 x.val=10.0
extract name="VTO" 1dvt ntype qss=3e11 workfunc=4.15 x.val=10.0
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RESULTS.FINAL FILE
First Oxide=7611.19 angstroms (0.761119 um) X.val=2
2nd Oxide Thickness=8944.31 angstroms (0.894431 um) X.val=10
2nd Oxide Thickness=4251.74 angstroms (0.425174 um) X.val=2
Gate Oxide Thickness=754.154 angstroms (0.0754154 um) X.val=10
Final Source xj=1.84039 um from top of first Silicon layer X.val=2
p-type Sheet Rs=95.5111 ohm/square X.val=2
Surface Concentration=6.86682e+14 atoms/cm3 X.val=10
VTO=-2.08365 V X.val=10
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Process Modeling
VIEWING AND PRINTING INPUT AND RESULTS FILES

The input file created using DECKBUILD can be saved as a text file.
Select file on the top banner (RMC) and select Save As (LMC) and
enter the filename.in
This text file can be viewed using KWrite, WordPad or other text
editor. It can be sent to another computer using secure ftp (such as
WinSCP) where it can be edited, read and/or printed.
These files can be printed in the VLSI lab by opening another
Terminal Window and at the command type lpr filename.in <RET>
The output results file is saved as results.final in the same directory
as the input file. This is also a text file that can be opened in KWrite,
WordPad or other editor and sent to another computer using secure
ftp.
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Process Modeling
SILVACO ATHENA (SUPREM) EXAMPLE

go athena
# set grid
line x loc=0.0 spac=0.1
line y loc=0.0 spac=0.01
Starting wafer resistivity = 11.3 ohm-cm
init silicon phosphor resistivity=11.3 orientation=1.00 space.mult=5.0

# ramp up from 800 to 900c soak 50 min dry o2, ramp down to 800 n2
diff time=10 temp=800 t.final=900 dryo2 press=1.0 hcl.pc=0
diff time=50 temp=900 dryo2 press=1.0 hcl.pc=0
diff time=20 temp=900 t.final=800 nitro press=1.0 hcl.pc=0
deposit photoresist thickness=1.0
etch phtotoresist left ;1.x=2.0
etch photoresist right p1.x=10.00
Grow Kooi oxide 1000
Ion Implant P-type D/S at Dose = 1E15
# ion implant drain and source

implant boron dose=1e15 energy=70 tilt=0 rotation=0 crysatal lat.ratio1=1.0 lat.ratio2=1.0
Etch photoresist all
Strip photoresist
# ramp up from 800 to 1000c soak 90 min, ramp down to 800 n2

diff time=90 temp=1000 nitro press=1.0 hcl.pc=0
diff time=40 temp=1000
t.final=800
nitro press=1.0 hcl.pc=0
Rochester Institute
of Technology
Anneal D/S implant
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Process Modeling

Ion Implant P-type channel at
Dose = 0, 4E12, 4e11, 1e12
# ion implant channel

implant boron dose=4e12 energy=100 tilt=0 rotation=0 crysatal lat.ratio1=1.0 lat.ratio2=1.0
etch oxide all
deposit nitride thick=0.010
Deposit 100 nitride
deposit oxynitride thick=0.01
Grow 700 gate oxide
Temp cycle for growth of

oxynitride
Deposit 100 oxynitride
deposit poly thick=0.60 c.phosphor=4e20
Deposit 6000 poly
# ramp up from 800 to 1000c soak 30 min, ramp down to 800 n2

diff time=30 temp=1000 nitro press=1.0 hcl.pc=0
Temp cycle for poly dope

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Process Modeling

etch poly left p1.x=1.5
etch poly right p1.x=10.5
etch oxynitride left p1.x=1.5
etch oxynitride right p1.x=10.5
etch nitride left p1.x=1.5
etch nitride right p1.x=10.5
etch oxide left p1.x=1.5
etch oxide right p1.x=10.5
deposit alumin thick=0.5
Deposit 5000 aluminum
etch alum start x=1.0 y= -2.0

etch cont x=1.0 y= 2.0
etch x=11.0 y= 2.0
etch done x=11.0 y= -2.0
struct outfile=UofH.str
tonyplot UofH.str
quit

Tonyplot example Only

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Process Modeling
SILVACO ATHENA (SUPREM)

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Process Modeling

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Process Modeling

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Process Modeling
SILVACO ATLAS (DEVICE SIMULATOR) EXAMPLE

Go athena
Init infile=UofH.str
Read in structure file created by Athena
#name the electrodes

Electrode name=gate x=6
Electrode name=source x=0
Electrode name=drain x=12
Electrode name=substrate backside
Define location of gate, source and drain
Extract name=vt 1dvt ptype qss=1e11 workfunc=4.11 x.val=6

Go atlas
# define the gate workfunction
Contact name=gate n.poly
# define the Gate Qss
Interface qf=1e11
# use the cvt mobility model for MOS
Models cvt srh
# set gate biases with Vds=0.0
Solve init
Solve vgate=0 outf=solve_temp0
Solve vgate=-1 outf=solve_temp1
Step gate voltage from 0 to 5 volts in 1 volt steps
# load in temporary file and ramp Vds

Load infile=solve_temp0
Log outf=Vg_0.log
Solve name=drain vdrain=0 vfinal=-5 vstep=-0.5
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Process Modeling
SILVACO ATLAS (DEVICE SIMULATOR EXAMPLE

# load in temporary file and ramp vds
load infile=solve_temp1
log outf=vg_1.log
solve name=drain vdrain=0 vfinal=-5 vstep=-0.5
log outf=vg_2.log
log outf=vg_3.log
log outf=vg_4.log
Sweep drain voltage from 0 to 5 volts

in 0.5 volt steps

log outf=vg_5.log
# extract max current and saturation slope
extract name=pidsmax max(abs(i.drain))
extract name=p_sat_slope slope(minslope(curve(abs(v.drain), abs(i.drain)))
tonyplot overlay vg_0.log vg_1.log vg_2.log vg_3.log vg_4.log vg_5.log set mos1ex09_1
quit
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Process Modeling
ATLAS SIMULATED FAMILY OF CURVES

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Process Modeling

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Process Modeling
VLSI DESIGN CENTER AT RIT

The VLSI Design Center (room 17-2500) consists of AMD Athlon 64
FX-51 Gentoo LINUX workstations, file servers and printers. The
workstations are primarily PCs running LINIX operating system.
The PCs are fast, have lots of RAM and disk space. There are two
file servers for user accounts and application software. The two main
print devices are a HP laser printer and a HP 36 inch color plotter.
There devices are connected through an Ethernet based network. The
primary application software, on this network, is the very
sophisticated and tightly integrated Mentor Graphics suite of EDA
(Electronic Design Automation) tools.
Accounts on the computers and access to the room are controlled by
the computer engineering department. Currently Charles Gruener for
computer accounts and Rick Tolleson for card swipe room access.
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Process Modeling
BASICS - DESKTOP
A graphical interface that provides workspaces, windows, menus,
controls, and a front panel to help you organize and manage your
software applications.
The Front Panel has a tool bar (usually at the bottom of the
screen).
The tool bar has a K-Gear icon which allows access to editors,
graphics programs and the open office software package. The
open office package has calculators, drawing programs, equation
editor and word processing. You can change the settings for the
look and feel of the desktop and the windows that are running. I
suggest that you do not go too wild changing things , instead stick
to getting the job done.
There are four desk tops available to run programs on. The
toolbar tells you which desktop you are looking at and what is
running in each window on the desktop.
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Process Modeling
BASICS CONTINUED
The Mouse: is a three button mouse. The left mouse button is used to
select or click on something. The right mouse button is used for
popup menus. The middle mouse button is typically defined for each
application and does not have a common function. For example in the
layout software IC the middle mouse button shifts the layout so that
the clicked location is centered in the workspace.
Log Out: click on K Gear icon, select Log Out, Select End Current
Session
Restore Session: If there is no activity for several minutes the screen
will be locked and require the user to type his password to restore the
session.

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Process Modeling
BASIC UNIX COMMANDS

Command
ls
directory
ls xxx*
cd
mv
rm
pwd
mkdir
rmdir
more filename
Description
list the files and directories in the current
list file or folders beginning with name xxx
change directory
move a file (rename a file)
remove a file (delete a file)
print path of current directory
create a new directory
remove a director
displays contents of filename
It is important to remember that since this is a UNIX operating system,

the commands are case sensitive.

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Process Modeling
REFERENCES
1. Silicon Processing for the VLSI Era, Vol.2., Stanley Wolf
2. The Science and Engineering of Microelectronic Processing,
Stephen Campbell
3. Technology Modeling Associates, TMA-SUPREM-4, Instruction
Manual.
4. Silvaco Modeling, Inc.
5. MicroTec-3.03 release note of March 27, 1998 floppy-disk
contains a complete set of MicroTec-3.03 programs for 2D
semiconductor process and device simulation and the Manual in
Adobe Acrobat format. http://www.siborg.ca

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Process Modeling
HOMEWORK SILVACO 2D SIMULATIONS

1. Determine the minimum nitride thickness that can be used for
the locos process in the RIT sub micron CMOS process that
will work as a ion implant masking layer during the channel
stop implant.
2. Determine the minimum field oxide thickness that can be used
for masking subsequent ion implants.
3. Determine the minimum poly thickness that can be used for
masking n+ and p+ D/S implants.
4. Determine the maximum time that the wafers can be at 1000
C before phosphorous from the poly gate will penetrate the
gate oxide and dope the channel region of the FET.
Page 33

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Process Modeling

ROCHESTER INSTITUTE OF TECHNOLOGY

2D Process Modeling with Silvaco

November 15, 2015, Dr. Lynn Fuller, Professor

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

PLAY BACK NEXT

November 15, 2015, Dr. Lynn Fuller, Professor

TIPS AND PRINTING TONYPLOT

November 15, 2015, Dr. Lynn Fuller, Professor

November 15, 2015, Dr. Lynn Fuller, Professor

TONY PLOT FOR EXAMPLE

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

SILVACO ATHENA SIMULATIONS OF D/S IMPLANT

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

November 15, 2015, Dr. Lynn Fuller, Professor

November 15, 2015, Dr. Lynn Fuller, Professor

VIEWING AND PRINTING INPUT AND RESULTS FILES

November 15, 2015, Dr. Lynn Fuller, Professor

SILVACO ATHENA (SUPREM) EXAMPLE

Starting wafer resistivity = 11.3 ohm-cm

init silicon phosphor resistivity=11.3 orientation=1.00 space.mult=5.0

Grow Kooi oxide 1000

Ion Implant P-type D/S at Dose = 1E15

# ion implant drain and source

# ramp up from 800 to 1000c soak 90 min, ramp down to 800 n2

Anneal D/S implant

November 15, 2015, Dr. Lynn Fuller, Professor

SILVACO ATHENA (SUPREM) EXAMPLE

# ion implant channel

Deposit 100 nitride

Grow 700 gate oxide

Temp cycle for growth of

Deposit 100 oxynitride

deposit poly thick=0.60 c.phosphor=4e20

Deposit 6000 poly

# ramp up from 800 to 1000c soak 30 min, ramp down to 800 n2

Temp cycle for poly dope

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

SILVACO ATHENA (SUPREM) EXAMPLE

Deposit 5000 aluminum

etch alum start x=1.0 y= -2.0

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

Tonyplot example Only

SILVACO ATHENA (SUPREM)

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

SILVACO ATHENA (SUPREM)

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor

SILVACO ATHENA (SUPREM)

Rochester Institute of Technology

November 15, 2015, Dr. Lynn Fuller, Professor