Large Ar
Large Ar
Large Ar
I. INTRODUCTION
High performance power electronic circuits are expected
to make a major impact on more-electric ships, submarines,
aircrafts, hybrid vehicles, nuclear-powered satellites, directed
energy weapons and spacecraft [1,2]. The primary benefits
are in terms of reduced weight and size, fuel savings, simple
thermal management and lower lifecycle costs. Si-based
power devices cannot meet the temperature, voltage,
switching speed, size and efficiency requirements to realize
these benefits. Wide bandgap semiconductors, particularly
S i c and GaN, are well suited to meet these requirements.
The wide bandgap results in very low intrinsic camer
concentration that provides negligible junction leakage
current up to 500C. This allows high temperature operation
3Materials Department
University of California Santa Barbara
Santa Barbara, CA 93 106
moranbaengineering. ucsb.edu
edmaster@engineering. ucsb.edu
clarke@engineering.ucsb.edu
233
I -*
Fig. 2. I-V curves under DC (solid lines). and .nulsed (dotted lines)
conditions showing dispersion for an unoptimised device.
Ld=1.5-24pn
S
SO
Semi-hrulsting SIC
85 nm AIN
Semi-insulating Sic
Fig. 4. I-V curves under DC (solid lines) and pulsed (dotted lines)
conditions showina
.nealiaible
.. disoersion for the double-eate
- dielectric
StNCNE.
234
UI1"F.U
0 . 1 II
COotrDl
DUT
S
-TO
140
2.4
120
2.0
1.6
E
m
=P
B
80
s
1.2
60
0.8
5
0
0.4
40
20
0.0
0.4
100 120
40
-40
-20
20
40
60
80
Time (ns)
Fig. IO. T u " characteristics afGaN HEMT device under resistive
load showing the drain-to-source voltage (Vds) and drain current (Id).
~.
6 S Io I2 i 4 I6 i n
Drain Voltage (V)
Fig. 8. I-V characteristics of a 600V / 2.SA GaN HEMT device.
o
235
-Id 21%
...
-Id mvc
0.8
3
5
0.4
0.0
0.4
40
-20
20
40
60
80
100
2.0
1.2
(PI
2.4
1.6
Time
120
Time (nr)
1.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
12
do (v)
Fig. 12. Static I-V curves o f a single GaN HEMT device at 23C and
E
.......
200oc.
0.8
.:.
>
I......
0.4 0
.
.
.,oo
. .
. ~.
~
.
0.0
. . . . . . .
I 4.54
.
.
3
E
400
100
300
400
em
Time (SJ
Fig. 15. Tum-on characteristics of GaN HEMT device before (top) and
after degradation @onom) upon exposure to ambient for 4-6 weeks
l.Oe-5
5.0.-7
V. TEMPERATURE MEASUREMENTS
0.0
0
40
80
100
Vds 0
Fig. 13. Leakage current of large a m GaN HEMT power device at 23C
and 2 0 0 T at gate-to-source voltage of -2OV.
236
Fig. 16. Schematic of a large area GaN HEMT device used for high
resolution temperaare measurements.
G lZO.O
e 100.0
fP
80.0
60.0
f 40.0
20.0
0.0
5.0
10.0
15.0
VI. CONCLUSIONS
600V / 2 S A GaN HEMT devices for power electronic
applications have been demonstrated. AIGaN/GaN devices
with a sheet charge of 8 . 3 ~ 1 0 ~
mobility of 1500
cm2N.s, and a specific on-resistance of 1.7 d a n 2have
been fabricated. Switching times less than 30 ns were
achieved with an on-resistance of 0.4 0. The dynamic
characteristics were measured up to 2SOV. At blocking
voltages of IlOV, a turn-on loss of 0.612 pJ and a turn-off
loss of 0.834 pJ was measured that corresponds to a total
switching loss of 1.4SW at 1 MHz switching frequency. The
static and dynamic characteristics of GaN HEMT devices
were also measured as a function of temperature up to 20OoC
demonstrating their applicability for high temperature power
electronics.
High-resolution (1-2 pm) temperature
measurements were performed using Raman spectroscopy.
Finally, device reliability upon prolonged exposure to
ambient was investigated. Improvements in materials growth
to reduce trap density and improved passivation materials are
critical needs for improving device reliability.
567.2
ACKNOWLEDGMENT
0 566.8
0.0
.?
5.0
10.0
15.0
777.0
22 776.5
776.0
775.5
775.0
0.0
5.0
10.0
15.0
REFERENCES
237
Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.
Alternative Proxies: