2 Generation Thinq! Sic Schottky Diode: Features Product Summary

IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode

Features
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
Product Summary
V DC
600
Qc
nC
IF
No reverse recovery/ No forward recovery

No temperature influence on the switching behavior
High surge current capability
PG-TO220-2-2
Pb-free lead plating; RoHS compliant

Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like:

CCM PFC
Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDT04S60C
PG-TO220-2-2
D04S60C
Maximum ratings, at T j=25 C, unless otherwise specified

Value
Parameter
Symbol Conditions
Continuous forward current
IF
T C<140 C
RMS forward current
I F,RMS
f =50 Hz
5.6
T C=25 C, t p=10 ms
32
Surge non-repetitive forward current,

I F,SM
sine halfwave
Unit
A
Repetitive peak forward current
I F,RM
T j=150 C,
T C=100 C, D =0.1
18
Non-repetitive peak forward current
I F,max
T C=25 C, t p=10 s
132
i t value
i 2dt
T C=25 C, t p=10 ms
5.1
A2s
Repetitive peak reverse voltage
V RRM
600
Diode dv/dt ruggedness
dv/ dt
V R = 0.480V
50
V/ns
Power dissipation
P tot
T C=25 C
42
Operating and storage temperature
T j, T stg
-55 ... 175
Mounting torque
Rev. 2.0
M3 and M3.5 screws

page 1
60
Mcm
2006-03-08
IDT04S60C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
3.6
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
leaded
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6mm (0.063 in.) from

case for 10s
260
600
K/W
Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics
DC blocking voltage
V DC
I R=0.05 mA
Diode forward voltage
VF
I F=4 A, T j=25 C
1.7
1.9
I F=4 A, T j=150 C
2.4
V R=600 V, T j=25 C
0.5
50
V R=600 V, T j=150 C
500
nC
<10
ns
pF
Reverse current
IR
AC characteristics
Total capacitive charge
Qc
Switching time3)
tc
V R=400 V,I FI F,max,

di F/dt =200 A/s,
T j=150 C
V R=1 V, f = MHz
130
V R=300 V, f =1 MHz
20
V R=600 V, f =1 MHz
20
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
3)
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4)
Rev. 2.0
Only capacitive charge occuring, guaranteed by design.
page 2
2006-03-08
IDT04S60C
1 Power dissipation
2 Diode forward current
P tot=f(T C)
I F=f(T C); T j175 C
parameter: RthJC(max)
parameter: R thJC(max); V F(max)
45
10
40
9
8
35
30
I F [A]
P tot [W]
6
25
20
5
4
15
10
0
25
50
75
100
125
150
175
200
25
50
75
100
T C [C]
125
150
175
200
T C [C]
3 Typ. forward characteristic
4 Typ. forward characteristic in surge current
I F=f(V F); t p=400 s
mode
parameter: T j
I F=f(V F); t p=400 s; parameter: Tj
40
-55C
175C
150C
150C
25C
100C
IF
30
IF
I F [A]
I F [A]
-55C
20
175C
25C
10
100C
0
0
V F[V]
Rev. 2.0
10
V F[V]
page 3
2006-03-08
IDT04S60C
5 Typ. forward power dissipation vs.
6 Typ. reverse current vs. reverse voltage
average forward current
I R=f(V R)
P F,AV=f(I F), T C=100 C, parameter: D =t p/T
parameter: T j
101
20
0.1
0.5
0.2
18
100
16
14
I R [A]
P F(AV) [W]
175 C
10-1
12
10
150 C
100 C
10-2
25 C
6
-55 C
10-3
4
2
10-4
100
0
0
200
I F(AV) [A]
300
400
500
600
V R [V]
7 Transient thermal impedance
8 Typ. capacitance vs. reverse voltage
Z thJC=f(t p)
C =f(V R); T C=25 C, f =1 MHz
parameter: D =t p/T
101
200
175
0.5
150
100
125
C [pF]
Z thJC [K/W]
0.2
0.1
0.05
10-1
100
75
0.02
50
25
single pulse
10-2
10-5
0
10-4
10-3
10-2
10-1
100
101
102
103
V R [V]
t P [s]
Rev. 2.0
10-1
page 4
2006-03-08
IDT04S60C
9 Typ. C stored energy
10 Typ. capacitance charge vs. current slope
E C=f(V R)
Q C=f(di F/dt )4); T j=150 C; I FI F,max
3.5
10
3.0
8
2.0
Q c [nC]
E c [C]
2.5
1.5
1.0
2
0.5
0.0
0
0
100
200
300
400
500
600
V R [V]
Rev. 2.0
100
400
700
1000
di F/dt [A/s]
page 5
2006-03-08
IDT04S60C
Package Outline:PG-TO220-2-2
Rev. 2.0
page 6
2006-03-08
IDT04S60C
Published by
Infineon Technologies AG
81726 Mnchen, Germany
Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 7
2006-03-08

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IDT04S60C

2ndGeneration thinQ!TM SiC Schottky Diode

No reverse recovery/ No forward recovery

Pb-free lead plating; RoHS compliant

thinQ! 2G Diode specially designed for fast switching applications like:

Maximum ratings, at T j=25 C, unless otherwise specified

Continuous forward current

RMS forward current

Surge non-repetitive forward current,

Repetitive peak forward current

Non-repetitive peak forward current

Repetitive peak reverse voltage

Diode dv/dt ruggedness

Operating and storage temperature

-55 ... 175

M3 and M3.5 screws

1.6mm (0.063 in.) from

Electrical characteristics, at T j=25 C, unless otherwise specified

Diode forward voltage

V R=400 V,I FI F,max,

J-STD20 and JESD22

Only capacitive charge occuring, guaranteed by design.

2 Diode forward current

I F=f(T C); T j175 C

parameter: R thJC(max); V F(max)

3 Typ. forward characteristic

4 Typ. forward characteristic in surge current

I F=f(V F); t p=400 s

I F=f(V F); t p=400 s; parameter: Tj

6 Typ. reverse current vs. reverse voltage

average forward current

P F,AV=f(I F), T C=100 C, parameter: D =t p/T

7 Transient thermal impedance

8 Typ. capacitance vs. reverse voltage

C =f(V R); T C=25 C, f =1 MHz

10 Typ. capacitance charge vs. current slope

Q C=f(di F/dt )4); T j=150 C; I FI F,max

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