IRF9540, SiHF9540

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

Dynamic dV/dt Rating

- 100

RDS(on) ()

VGS = - 10 V

Qg (Max.) (nC)

14

Qgd (nC)

29

Configuration

RoHS*

P-Channel

61

Qgs (nC)

Available

Repetitive Avalanche Rated

0.20

COMPLIANT

175 C Operating Temperature

Fast Switching
Ease of Paralleling

Single

Simple Drive Requirements

S

Compliant to RoHS Directive 2002/95/EC

TO-220AB

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

S
D
P-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF9540PbF
SiHF9540-E3
IRF9540
SiHF9540

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

VDS
VGS

- 100
20
- 19
- 13
- 72
1.0
640
- 19
15
150
- 5.5
- 55 to + 175
300d
10

lbf in

1.1

Nm

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

VGS at - 10 V

TC = 25 C
TC = 100 C

ID
IDM

TC = 25 C

for 10 s
6-32 or M3 screw

EAS
IAR
EAR
PD
dV/dt
TJ, Tstg

UNIT
V

A
W/C
mJ
A
mJ
W
V/ns
C

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12).
c. ISD - 19 A, dI/dt 200 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91078
S11-0512-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9540, SiHF9540
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

1.0

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = - 250 A

- 100

VDS/TJ

Reference to 25 C, ID = - 1 mA

- 0.087

V/C

VGS(th)

VDS = VGS, ID = - 250 A

- 2.0

- 4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 100 V, VGS = 0 V

- 100

VDS = - 80 V, VGS = 0 V, TJ = 150 C

- 500

Gate-Source Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)
gfs

ID = - 11 Ab

VGS = - 10 V

VDS = - 50 V, ID = - 11 Ab

0.20

6.2

1400

590

140

61

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

Qg

Gate-Source Charge

Qgs

14

Gate-Drain Charge

Qgd

29

Turn-On Delay Time

td(on)

16

tr

73

34

57

4.5

Rise Time
Turn-Off Delay Time

td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5

VGS = - 10 V

ID = - 19 A, VDS = - 80 V,
see fig. 6 and 13b

VDD = - 50 V, ID = - 19 A,
Rg = 9.1 , RD = 2.4, see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

pF

nC

ns

nH

7.5

- 19

- 72

TJ = 25 C, IS = - 19 A, VGS = 0 Vb

- 5.0

130

260

ns

0.35

0.70

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IF = - 19 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9540, SiHF9540
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

102

VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V

101
- 4.5 V

- ID, Drain Current (A)

- ID, Drain Current (A)

Top

25 C
175 C
101

20 s Pulse Width
TC = 25 C
100

101

- VDS, Drain-to-Source Voltage (V)

91078_01

20 s Pulse Width
VDS = - 50 V

- ID, Drain Current (A)

101
- 4.5 V
20 s Pulse Width
TC = 175 C
100

91078_02

3.0

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

10

ID = - 19 A
VGS = - 10 V

2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0

101

- VDS, Drain-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V

- VGS, Gate-to-Source Voltage (V)

91078_03

Fig. 1 - Typical Output Characteristics, TC = 25 C

Top

91078_04

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9540, SiHF9540

3000

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

2500
2000

Ciss

1500
1000

Coss
500
Crss

- ISD, Reverse Drain Current (A)

Vishay Siliconix

101

175 C

25 C

100
VGS = 0 V

0
100

101

0.0

- VDS, Drain-to-Source Voltage (V)

91078_05

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

103

ID = - 19 A

VDS = - 20 V

102
5

100 s

1 ms

10
5

10 ms

1
TC = 25 C
TJ = 175 C
Single Pulse

For test circuit

see figure 13

0
0
91078_06

10

20

30

40

50

0.1

60

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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4

5.0

4.0

VDS = - 50 V
12

3.0

Operation in this area limited

by RDS(on)

VDS = - 80 V

16

2.0

Fig. 7 - Typical Source-Drain Diode Forward Voltage

- ID, Drain Current (A)

- VGS, Gate-to-Source Voltage (V)

20

1.0

- VSD, Source-to-Drain Voltage (V)

91078_07

0.1
91078_08

10

102

103

- VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9540, SiHF9540
Vishay Siliconix

RD
VDS
VGS

D.U.T.

RG

+VDD

20
- 10 V
Pulse width 1 s
Duty factor 0.1 %

- ID, Drain Current (A)

16

Fig. 10a - Switching Time Test Circuit

12

8
td(on)

td(off) tf

tr

VGS
4

10 %

0
25

50

75

100

125

150

175
90 %
VDS

TC, Case Temperature (C)

91078_09

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

1
D = 0.5
PDM
0.2
0.1

0.1

t1
t2

0.05
0.02
0.01

Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

Single Pulse
(Thermal Response)

10-2
10-5
91078_11

10-4

10-3

10-2

0.1

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

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5

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9540, SiHF9540
Vishay Siliconix

L
Vary tp to obtain
required IAS

IAS

VDS

VDS

D.U.T

RG

+ V DD
VDD

IAS
tp

- 10 V
0.01

tp

VDS
Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

2000
ID
- 7.8 A
- 13 A
Bottom - 19 A
Top

1600

1200

800

400

VDD = - 25 V
25

91078_12c

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

- 10 V

12 V

0.2 F
0.3 F

QGS

QGD
D.U.T.

VG

+ VDS

VGS
- 3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9540, SiHF9540
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Note
Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = - 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = - 5 V for logic level and - 3 V drive devices

Fig. 14 - For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91078.

Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

www.vishay.com
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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
A

DIM.

Q
H(1)
D

L(1)

M*

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

4.24

4.65

0.167

0.183

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F
P

MILLIMETERS

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C

b
e
J(1)
e(1)

Package Picture
ASE

Revison: 14-Dec-15

Xian

Document Number: 66542

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000