BY229 (X, B) - 200 Thru BY229 (X, B) - 800: Vishay General Semiconductor
BY229 (X, B) - 200 Thru BY229 (X, B) - 800: Vishay General Semiconductor
BY229 (X, B) - 200 Thru BY229 (X, B) - 800: Vishay General Semiconductor
TO-220AC ITO-220AC
FEATURES
Glass passivated chip junction
Superfast recovery time for high efficiency
Low leakage current
High forward surge capability
2 2 Meets MSL level 1, per J-STD-020, LF
1
1 maximum peak of 245 C (for TO-263AB package)
BY229 Series BY229x Series Solder dip 260 C, 40 s (for TO-220AC and
PIN 1
PIN 1
ITO-220AC package)
PIN 2 CASE
PIN 2
Component in accordance to RoHS 2002/95/EC
TO-263AB
and WEEE 2002/96/EC
K
TYPICAL APPLICATIONS
2 For use in fast switching rectification of power
1
supply, inverters, converters and freewheeling diodes
BY229B Series
PIN 1 K
application.
PIN 2 HEATSINK
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
PRIMARY CHARACTERISTICS
Epoxy meets UL 94V-0 flammability rating
IF(AV) 8.0 A
Terminals: Matte tin plated leads, solderable per
VRRM 200 V to 800 V
J-STD-002 and JESD22-B102
IFSM 100 A
E3 suffix for commercial grade, meets JESD 201 class
trr 145 ns 1A whiskter test, HE3 suffix for high reliability grade
VF 1.85 V (AEC Q101 qualified), meets JESD 201 class 2
TJ max. 150 C whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Document Number: 88540 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 06-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
BY229(X,B)-200 thru BY229(X,B)-800
Vishay General Semiconductor
IF = 1.0 A, VR = 30 V,
Maximum reverse recovery time trr 145 ns
dI/dt = 50 A/s, Irr = 10 % IRM
IF = 2.0 A, VR = 30 V,
Maximum recovered stored charge Qrr 700 nC
dI/dt = 20 A/s
Note:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Typical thermal resistance from junction to case RJC 2.0 4.8 2.0 C/W
Typical thermal resistance from junction to air RJA 20 - 20 C/W
Note:
(1) Automotive grade AEC Q101 qualified
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88540
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 06-Nov-07
BY229(X,B)-200 thru BY229(X,B)-800
Vishay General Semiconductor
12 1000
Average Forward Rectified Current (A)
8 TJ = 100 C
Current (A)
10
1
4
TJ = 25 C
2 0.1
0 0.01
0 25 50 75 100 125 150 0 20 40 60 80 100
Case Ambient Temperature (C) Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics
150 100
TJ = 25 C
Peak Forward Surge Current (A)
TL = 75 C f = 1.0 MHz
125
8.3 ms Single Half Sine-Wave Vsig = 50 mVp-p
Junction Capacitance (pF)
100
75
50
25
0 10
1 10 100 1 10 100
Number of Cycles at 60 Hz Reverse Voltage (V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Figure 5. Typical Junction Capacitance
100
Instantaneous Forward Current (A)
TJ = 150 C TJ = 25 C
10
TJ = 100 C
1
TJ = 125 C
Document Number: 88540 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 06-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
BY229(X,B)-200 thru BY229(X,B)-800
Vishay General Semiconductor
0.105 (2.67)
0.095 (2.41) 0.037 (0.94) 0.035 (0.89)
0.025 (0.64) 0.025 (0.64)
0.027 (0.68) 0.022 (0.56)
0.015 (0.38) 0.028 (0.71)
0.205 (5.20) 0.014 (0.36) 0.205 (5.21)
0.195 (4.95) 0.020 (0.51)
0.195 (4.95)
TO-263AB
0.411 (10.45) 0.190 (4.83) Mounting Pad Layout
0.380 (9.65) 0.160 (4.06) 0.055 (1.40)
0.245 (6.22) 0.045 (1.14) 0.42 (10.66) MIN.
MIN.
K
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88540
4 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 06-Nov-07
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