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    S175 50

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    Andra Belea
    The S175-50 is a 50 volt transistor designed for linear amplifier applications from 1.5-30 MHz. It can provide up to 175 watts of power output with a power gain of 17-17.5 dB and 65% efficiency. The transistor uses gold topside metal, diffused emitter ballast resistors, and silicon nitride passivation for high reliability.

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    S175 50

    Uploaded by

    Andra Belea
    102 views4 pages
    The S175-50 is a 50 volt transistor designed for linear amplifier applications from 1.5-30 MHz. It can provide up to 175 watts of power output with a power gain of 17-17.5 dB and 65% efficiency. The transistor uses gold topside metal, diffused emitter ballast resistors, and silicon nitride passivation for high reliability.

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    datasheet tranzistori

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    S175-50

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    The S175-50 is a 50 volt transistor designed for linear amplifier applications from 1.5-30 MHz. It can provide up to 175 watts of power output with a power gain of 17-17.5 dB and 65% efficiency. The transistor uses gold topside metal, diffused emitter ballast resistors, and silicon nitride passivation for high reliability.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    102 views4 pages

    S175 50

    Uploaded by

    Andra Belea
    The S175-50 is a 50 volt transistor designed for linear amplifier applications from 1.5-30 MHz. It can provide up to 175 watts of power output with a power gain of 17-17.5 dB and 65% efficiency. The transistor uses gold topside metal, diffused emitter ballast resistors, and silicon nitride passivation for high reliability.

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    © All Rights Reserved
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    S175 - 50

    175 Watts, 50 Volts, Class AB


    Milcom 1.5 - 30 MHz

    GENERAL DESCRIPTION CASE OUTLINE


    The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,
    AB or C operation in the HF/VHF frequency bands. Its high collector voltage
    55HX, Style 2
    simplifies the design of wideband, SSB linear amplifiers. The transistor chip is
    built using Gold Topside Metal, diffused emitter ballast resistors and silicon
    nitride passivation, providing the user with the Highest MTTF available.

    ABSOLUTE MAXIMUM RATINGS


    Maximum Power Dissipation @ 25oC 270 Watts

    Maximum Voltage and Current


    BVces Collector to Emiter Voltage 110 Volts
    BVebo Emitter to Base Voltage 4.0 Volts
    Ic Collector Current 20 A

    Maximum Temperatures
    Storage Temperature - 65 to +150 oC
    Operating Junction Temperature +200 oC

    ELECTRICAL CHARACTERISTICS @ 25 OC
    SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

    Pout Power Output F = 30 MHz 175 Watts


    Pin Power Input Vcc = 50 Volts 3.5 Watts
    Pg Power Gain At Rated Power Out 17 17.5 dB
    c Efficiency 65 %
    VSWR Load Mismatch Tolerance 30:1

    BVebo Emitter to Base Breakdown Ie = 10 mA 4 Volts


    BVces Collector to Emitter Ic = 100 mA 110 Volts
    BVceo Breakdown Ie = 100 mA 53 Volts
    Zin Collector to Emitter At Rated Pout & Freq. 0.6-j0.4 OHMS
    ZI Breakdown At Rated Pout & Freq. 4.6+2.1 OHMS
    Cob Series Input Impedance Vcb = 50 V, Ie = 0 180
    hFE Series Load Impedance Vce = 5 V, Ic = 2 A 10
    IMD Output Capacitance At Rated Pout -35 dBc
    DC - Current Gain
    Intermodulation Distortion Lev.

    Initial Issue June, 1994

    GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
    BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
    THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

    GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
    S175-50
    S175-50

    2-30 MHz, 300 Watts


    Linear Amplifier
    L2 C5 +50V
    C8 C9

    R3 C10 RF OUT

    RF IN Q1
    T1
    R4
    C7
    C2 C4 T3
    R5
    T2
    Q2

    R6
    L3 C6

    L1
    BYI-1
    R1

    R2
    +

    Vbb
    C1
    - C3

    Q1,Q2=Ghz S175-50 TRANSFORMER DETAILS


    BYISTOR=GHz BYl-1 T1: 8 beads of Indiana General F625-9, H
    C1,C3,C5,C6,C7,C8=0.1mF ceramic material on two brass tubes. The primary is
    C2=25-240pF Compression Mica four turns of #20 vinyl clad wire wound
    C4=75-480pF Compression Mica through the brass tubes
    C9=10mF, 50V, Electrolytic
    C10=2700pF DM15 T2: #20 twisted pair, approximately 2 crests
    L1=6 turns on Indiana General F627-9, H Material per centimeter, wound on Indiana General
    L2,L3=2.2mH, Molded Inductor F624-19, H material
    R1,R2=22W, 2 Watts
    R3,R6=220W, 2 Watts T3: 10 beads of Indiana General F627-8,
    R4,R5=10W, 1/4 Watt H materail mounted on two brass tubes. The
    secondary consist of 3 #20 vinyl clad wires
    August 1996 in parallel. The three wires should be wound
    to produce a 2:1 turns ratio
    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

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