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TYN612T: Haopin Microelectronics Co.,Ltd

This document provides specifications for glass passivated thyristors from Haopin Microelectronics intended for general purpose switching and phase control applications. The TYN612T thyristors have a blocking voltage up to 600V, on-state RMS current up to 12A, and require ultra low gate trigger currents. They are housed in a plastic TO-220 package and can interface directly with microcontrollers and logic ICs for motor control, lighting, and heating applications.

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101 views

TYN612T: Haopin Microelectronics Co.,Ltd

This document provides specifications for glass passivated thyristors from Haopin Microelectronics intended for general purpose switching and phase control applications. The TYN612T thyristors have a blocking voltage up to 600V, on-state RMS current up to 12A, and require ultra low gate trigger currents. They are housed in a plastic TO-220 package and can interface directly with microcontrollers and logic ICs for motor control, lighting, and heating applications.

Uploaded by

Testronicparts
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TM

TYN612T
HPM SCRs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose
switching and phase control applications. These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Symbol Simplified outline


Applications:

a k Motor control
Industrial and domestic lighting
g
12 Heating
3
TO-220 Static switching
Pin Description
1 Cathode Features
2 Anode Blocking voltage to 600 V
3 Gate On-state RMS current to 12A
Ultra low gate trigger current

SYMBOL PARAMETER Value Unit


V DRM Repetitive peak off-state voltages 600 V

IT RMS RMS on-state current 12 A

I TSM Non-repetitive surge peak on-state current 140 A

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

Rth( j-c)
Junction to case(DC) - 1.3 - /W

Rth( j-a) Junction to ambient - 60 - /W

http://www.haopin.com 1/5
TM
TYN612T
HPM SCRs
HAOPIN MICROELECTRONICS CO.,LTD.

Limiting values in accordance with the Maximum system(IEC 134)


SYMBOL PARAMETER CONDITIONS MIN Value UNIT
V DRM/V RRM - 600 V

I T(RMS) RMS on-state current 180 oC conduction angle Tc=105 - 12 A


o -
Non repetitive surge Tj=25 C tp=8.3ms
I TSM peak on-statecurrent - 146 A
o
Tj=25 C tp=10ms - 140 A

IT (AV)
o
Average on-state current 180 C conduction angle Tc=105 - - A

2
It 2
I t Value for fusing T p=10ms Tj=25 - 98 AS
2

Critical rate of rise of


DI/dt on-state current IG=2x I GT,tr<=100ns F=60H Z Tj=125 - 50 A/ s
I GM Peak gate current tp=20us Tj=125 - 4 A
I DRM V DRM=V RRM Tj=25 - 5 A
I RRM V DRM=V RRM Tj=125 - 2 mA
Average gate
P G(AV) Tj=125 - 1 W
power dissipation
Storage junction
T stg temperature range -40 150

Operating junction
Tj Temperature range
-40 125

O
T J=25 C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT


Static characteristics
I GT V D=12V; RL=33
0.5 - 5 mA
V GT
1.3 V
IL I G=1.2I GT
- - 30 mA
IH I T=500mA Gate open - - 15 mA
V GD V D=V DRM R L=3.3K Tj=125 0.2 - - V

dV/dt V D=67%V DRM Gateopen;T J=125 40 - - V/us

Dynamic Characteristics

V TM l TM=24A tp=380 s T J=25 - - 1.6 V

V to Threshold voltage T J=125 - - 0.85 V


Rd Dynamic resistance T J=125 30 m

http://www.haopin.com 2/5
TM
TYN612T
HPM SCRs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

http://www.haopin.com 3/5
TM
TYN612T
HPM SCRs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

http://www.haopin.com 4/5
TM
TYN612T
HPM SCRs
HAOPIN MICROELECTRONICS CO.,LTD.

Description

http://www.haopin.com 5/5
TM
TYN612T
HPM SCRs
HAOPIN MICROELECTRONICS CO.,LTD.

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g
TO-220AB

http://www.haopin.com 5/5

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