LDR PDF
LDR PDF
LDR PDF
No:
Date :
A U
decreases with increasing incident light intensity. It can also be referred to as a light-
dependent resistor (LDR), photoconductor, or photocell. A
T - photoresistor is made of
a high-resistance semiconductor. If light falling on A
E the device is of high enough
frequency, photons absorbed by the semiconductor
I -Fgive bound electrons enough energy
E
to jump into the conduction band. The resulting& free electron (and its hole partner)
B -
conduct electricity, thereby lowering resistance.
Cadmium sulfide (CdS) cells LArely on the material's ability to vary its resistance
E C striking the cell. The more light that strikes the cell,
according to the amount of light
1
Fig.1. Characteristics of LDR
A U
T-
E A
I- F
E &
B -
L A (12V 52 25IPS)
EC
E L
2
Procedure:
1. Set up a 60W lamp on the bench to act as a light source as shown in Fig.1.
2. Connect the multi-meter to the LDR and adjust it to a suitable resistance range.
3. Measure the dark resistance of the LDR after covering the LDR by a black piece
of cloth.
4. Now place the LDR at different distances (r) from the lamp and measure its
resistance.
5. You should end up with a table showing distance and resistance.
Plot a graph to show how the resistance (y-axis) varies with distance (x-axis) as
shown in model graph (Fig.3). The light intensity ( E ) is believed to be inversely
1
proportional to the square of the distance ( r ) from the light source ( E = 2 ).
r
1
A U
Therefore, complete the table with calculated 2 values. Plot a graph to show how the
r
T- 1
EA
resistance varies with light intensity by plotting resistance against 2 as shown in
r
model graph (Fig.4).
I- F
&
Part II
- E
Object Counter Using LDR
Apparatus required
A B
(i) L supply
0 30 volts dual D.C power
(ii)
E C
3 volts dc motor (FHP)
(iii)
EL counter (12 volts , 52 ohms , 25 IPS)
Electromagnetic
(iv) 2N3055 NPN power transistor
(v) SL100 NPN transistor
(vi) 1N4007 Junction diode ------- 2 Nos.
(vii) Resistors: 1.8 k,1/2 watt; 2.2 k ,1/2 watt.
Theory:
The circuit diagram shown in Fig.2 is an object counter that uses LDR as light
sensor. Under normal condition when the object is not present, the LDR is exposed to the
light source and hence the LDR resistance is low. Therefore, the voltages drop across the
3
550
Characteristics of LDR
500
450
400
RLDR, Ohms
350
300
250
200
150
U
10 20 30 40 50 60
A
Distance between LDR and Light source (r), cm
T-
E A
F
Fig.3. LDR Resistance ( R LDR ) versus Distance ( r )
& I-
- E
550
B
Light intensity Vs Resistance of LDR
A
L
500
450
EC
400
EL
RLDR, Ohms
350
300
250
200
150
4
1.8 k (Base to emitter Voltage VBE1 of Transistor T1) is more than 0.7V. This voltage
can be calculated by potential divider rule and is as follows:
R2
VBE1 = VCC ( VCC =10V here)
R 2 + RLDR
This voltage is sufficient enough to drive the transistor T1 into saturation. This results
in a low collector voltage VC1 (around 0.2V) which is not sufficient to switch on the
Transistor T2. However, when the light is interrupted by a moving object, the LDR
resistance increases momentarily thus reducing V BE1 below 0.7V. This makes the
transistor T1 off thus raising the the collector voltage VC1 to 10V approximately. This
switches on the transistor T2 thus energizing the counter coil to increment the count.
These actions are summarized in the following table.
A U
T -
Status of A
Object LDR LDR V
E V Status of Counter
-F
BE1 C1
LA increment
High C <0.7V Off
E
Yes No 10V On Incremented
E L
A conveyor belt (elastic belt) is used to achieve fast movement of an object in
this experiment. The speed of the movement of the object is controlled by the speed of
the dc motor. A 3 volts dc supply is applied to the dc motor and the light source.
Energise the sensor circuit with 10 volts dc supply. When the motor is switched on, the
conveyor belt moves and hence object moves. The light source and the LDR are placed
diametrically opposite to each other in opposite sides of the conveyor belt and when the
object crosses this arrangement, the light falling on the LDR is momentarily
interrupted.
5
Table 1. LDR Characteristics
Distance between 1 R LDR
LDR and source r2
(Ohms)
r (cm)
5
10
15
20
25
U
30
35
- A
40
A T
F E
I-
45
50
E &
B -
L A
EC
L
Table 2. Object Counter Circuit experimental verification data
6
Procedure:
(1) Connect the circuit as shown in Fig.2
(2) Energise the circuit with 10V D.C power supply. Switch on the light source.
However, do not switch on the supply to the conveyor.
(3) Manually adjust the conveyor so that the object does not interrupt the light
source from falling on the LDR. Measure the voltages VBE1 and VC1 and tabulate the
values in the table. Indicate the status of the transistor switches and counter in the
table.
(4) Manually adjust the conveyor so that the object does interrupt the light source
from falling on the LDR. Measure the voltages VBE1 and VC1 and tabulate the values
U
in the table. Indicate the status of the transistor switches and counter in the table.
A
-
(5) Now, switch on the supply to the conveyor and note down the count after 10
T
revolutions. Justify your result.
E A
I- F
Result:
E &
-
The characteristics of LDR were determined. The resistance of the LDR decreases
B
A
with increasing light intensity. The dark resistance of the given LDR was measured
L
C
to be ------Ohms. An object counter was constructed using LDR sensor and
E
satisfactorily. E L
transistor switches. The object counting is tested and found to be working
Exercises :
1. What are the materials used for fabricating LDR?
2. What is the relationship between resistance of the LDR and the light intensity?
3. What will happen if LDR and resistor R2 are interchanged?
4. What are the applications of LDR?
7
APPENDIX
SPECIFICATIONS OF ELECTRONIC DEVICES
8
Exp. No:
Date :
The common emitter circuit has good voltage gain with phase inversion i.e. the
U
output voltage decreases when the input voltage increases and vice-versa. The CE
- A
circuit also has good current gain and power gain and relatively high input and low
output impedance. As a voltage amplifier the CE circuit T
E A is by far the most frequently
used of all 3 basic transistor configurations.
F
In the amplifier circuit shown in Fig.1, RI-is the thermal stabilizing resistance,
E& resistance R is kept at 1 k and R
E
A B C 1
2
L
and R form the potential divider. The load R is coupled by a capacitor to block any
L
E C
d.c voltage at the load. Similarly, the a.c. input signal is input to the amplifier through a
coupling capacitor C . L
Procedure
C
E
To obtain the input impedance Z in
1. The connections are made as per the circuit diagram shown in Fig.2.
2. Set the function generator input voltage as 20mV and frequency as 1kHz.
3. Note down the output voltage of the amplifier keeping RX =0.
4. Now, increase RX, till the output voltage is reduced to half. Note down the
reading RX.
9
A U
T-
E A
Fig.1. Circuit Diagram of RC coupled Common Emitter Amplifier
I - F
E &
B -
LA
E C
EL
10
This RX value gives the input impedance ( Z in )of the amplifier circuit. This is
due to the fact when the value of RX equals the input impedance Z in of the amplifier
only half the input voltage appears across Z in and therefore the output voltage reduces
to half (Vo/2) since the voltage gain (Av ) is constant and the frequency is maintained
constant at 1kHz.
F E
I-
1. The connections are made as per the circuit diagram shown in Fig. 3.
&
2. Set the function generator input voltage as 20mV and frequency as 1kHz.
E
B -
3. Set Ry = 10 k so that Zo << Ry and note down the output voltage Vo.
L A
4. Now, decrease RY, till Vo becomes Vo/2. At this point, the load voltage
C
becomes half since the present value of RY equals Zo of the amplifier.
E
E L
5. The experimental setup shown in Fig.3 is used to determine the output
impedance of the amplifier circuit. Considering the Thevenins equivalent
circuit to the output side, we find that when the value of the resistance in the
decade box, RY equals Zo of the amplifier, the voltage is divided equally
and hence Vo becomes Vo /2.
11
Table 1 Frequency response characteristics
Vin = 20mV
Output Gain in dB
Frequency Voltage Gain
S.No Voltage Vo 20 log
(Hz) Vo / Vin
(Volts) (Vo/Vin)
1 20
2 40
3 60
4 80
5 100
6 200
7 400
8 600
9 800
10 1000
A U
11
12
2000
4000
T-
13 6000
EA
14
15
8000
10000
I- F
16 20000
E &
17 40000
B -
A
18 60000
19 80000
L
20
21
EC
100k
200k
E L
12
To Determine Bandwidth
1. The connections are made as per the circuit diagram shown in Fig. 1.
2. The signal generator input voltage is maintained at 20 mV constant and its
frequency is varied from 10Hz to 100kHz.
3. Corresponding output voltages are noted down at each frequency.
4. Frequency response curve is plotted on a semilog sheet taking log f along X-
axis and the Voltage gain in dB= 20 log Vo/Vin along Y-axis.
To Determine current gain AI
AI Z o
We know that the voltage gain AV is given as AV = . Therefore, the
Z in
current gain AI =
AV Z in
A U
. At the frequency of 1kHz, we have already obtained the
Zo
T -
V in
E
voltage gain A , input impedance Z and output impedanceA Z . Using the values, the
o
C
were calculated. The current gain A was estimated
I
from the measured values ofEvoltage gain, input impedance, and output impedance. The
EL are summarized below.
measured amplifier parameters
Bandwidth
Voltage gain at 1kHz ( AV )
13
A U
T-
EA
I- F
E &
B-
L A
EC
EL
14
Exp. No:
Date :
Aim:
1. To experimentally obtain the hybrid a.c equivalent circuit of the given transistor by
calculating the h-parameters from the input and output characteristics of the
transistor.
2. To analyze the given RC coupled amplifier employing the given transistor using the
hybrid a.c equivalent circuit of the transistor and determine analytically the voltage
gain of the given amplifier.
A U
3. To conduct suitable experiments on the given amplifier T - and measure the voltage
E A gain with the analytical
gain of the amplifier and compare the measured voltage
-F
gain calculated.
& I
E
Apparatus Required:
1. Signal generator
B -
LA
2. DC power supply [0-30V D.C]
3. A.C Voltmeter [0-10V]
Theory: E
Two Port Network: To determine the hybrid equivalent circuit, consider a two-
port network as shown in Fig.1. We may select any two of the quantities as
independent variable and express the remaining two dependent variables in terms of
independent variables. Fig.2 shows the equivalent circuit of any two port network. In
this network,
v1 = h11i1 + h12 v2
i2 = h21i1 + h22 v2
where h11 , h12 , h21 and h22 are called hybrid parameters or simply h-
parameters.
15
Fig.1 Two port network
A U
T-
E A
I- F
E &
B -
L A
C
Fig 2. Hybrid equivalent circuit of two port network
E
E L
Fig.3 Hybrid equivalent circuit of two port network with output shorted
16
v
h11 = 1 with v2 = 0
i1
This gives the a.c input resistance with output shorted for a.c. (Fig.3)
v
h12 = 1 with i1 = 0
v2
This gives the reverse voltage transfer ratio with the input open for a.c (Fig.4)
i
h21 = 2 with v2 = 0
i1
This gives the forward current gain with output shorted for a.c (Fig.3)
i
h22 = 2 with i1 = 0
v2
This gives the output conductance with the input open for a.c (Fig.4)
U
CE Transistor as two port network: Consider a simple common emitter transistor
A
-
configuration shown in Fig.5. Select the base current ( I B ) and Collector to Emitter
T
E
voltage ( V ) as independent variables. The input voltage
CE A (V ) and output current
BE
I = f ( I ,V )
C B CE
ic = h fe ib + hoe vce
Now, if one wishes to obtain the a.c equivalent circuit of the given transistor it becomes
necessary to measure the h-parameters hie , hre , h fe and hoe . From the above said
17
Fig.4 Hybrid equivalent circuit of two port network with input open circuited
A U
T-
E A
I- F
E &
B -
L A
Fig.5 CE Configured Transistor circuit
EC
E L
18
achieved by maintaining VCE constant. However, input voltage should be given a small
to calculate hie the a.c input resistance of the transistor. It is obvious from the above
discussion that hie can be calculated from the input characteristics of the given
transistor where in I B versus V BE is plotted keeping VCE constant. So, the input a.c
V BE
resistance of the transistor is hie = with VCE constant.
I B
v
hre = be with ib = 0 . The input should be opened for a.c. to make ib = 0 . Physically,
vce
A U
-be given a small change
it means that input current should not be allowed to change. This can be achieved by
maintaining I constant. However, input voltage should
B
A T
( v or V ) and the change in output voltage ( v Eor V ) should be observed to
I -Fthat h can be calculated from the
be BE ce CE
re
E &
estimate h . It is obvious from the above discussion re
LA
B BE
of constant V values.
CE
E C
h =
fe
ic with v = 0Ece
L
. The output should be shorted for a.c to make v = 0 . ce
ib
Physically, it means that output voltage should not be allowed to change. This can be
achieved by maintaining VCE constant. However, input current should be given a small
calculate h fe , the forward a.c current gain of the transistor. It is obvious from the above
discussion that h fe can be calculated from the output characteristics of the given
19
A U
T -
E A
Fig.7 Experimental Circuit diagram for Input characteristics of CE transistor
I -F
E &
B -
LA
E C
EL
20
i
hoe = c with ib = 0 . The input should be opened for a.c. to make ib = 0 . Physically,
vce
it means that input current should not be allowed to change. This can be achieved by
maintaining I B constant. However, output current should be given a small change
( ic or I C ) and the change in output voltage ( vce or VCE ) should be observed to
estimate hoe . It is obvious from the above discussion that hoe can be calculated from
the output characteristics of the given transistor where in I C versus VCE is plotted for a
constant I B value.
Procedure:
Determination of hie :
A U
-
1. The measured data of the input characteristics from the circuit (Fig.7) are given in
T
Table1.
E A
F
2. Draw the I B versus V BE characteristics as shown in the model graph given as
I-
Fig.M1.
E &
B -
80
L A
VCE=1V Constant
IB2
EC
EL
Base Current IB, A
60
40
IB1
20
VBE1 VBE2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Base to Emitter Voltage VBE, Volts
21
A U
T-
Fig.9 Experimental circuit diagram of RC coupled A
E
Common Emitter Amplifier
I -F
E &
B -
LA
E C
EL
22
3. Mark the points I B1 , I B 2 , V BE1 and V BE 2 as shown in the Fig.M1 and note down
the values.
4. V BE = V BE 2 V BE1 and I B = I B 2 I B1 .
5. Calculate the a.c input resistance of the given transistor using the
V BE
formula hie = .
I B
Determination of hre :
1. The measured data of the input characteristics are given in Table1.
2. Draw the I B versus V BE characteristics as shown in the model graph given as
Fig.M2 for two different values of VCE .
A U
T- VCE2=1V
A
80 VCE1=0.3V
F E
I-
Base Current IB, A
&
60
IB=50
- E
40
A B
L
20
EC
E L VBE1 VBE2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Base to Emitter Voltage VBE, Volts
3. Mark the points V BE1 , V BE 2 , VCE1 , VCE 2 as shown in the Fig.M2 and note down
the values.
4. V BE = V BE 2 V BE1 and VCE = VCE 2 VCE1 .
5. Calculate the reverse voltage transfer ratio of the given transistor using the
V BE
formula hre = .
VCE
23
Table 1. Input Characteristics of the given Transistor
A U
T-
E A
I- F
Table2. Output Characteristics of the given Transistor
E &
-
AB
I B =30 A I B = 50 A
VCE ( V ) I C ( mA )
L VCE ( V ) I C ( mA )
0
EC 0 0 0
L
0.5 2 0.5 3.1
1
2 E 2.25
2.35
1
2
3.2
3.225
3 2.4 3 3.25
4 2.425 4 3.275
5 2.45 5 3.3
6 2.475 6 3.325
7 2.5 7 3.35
8 2.525 8 3.375
24
Determination of h fe :
1. The measured data of the output characteristics using circuit shown in Fig.8 are
given in Table2.
2. Draw the I C versus VCE characteristics as shown in the model graph given as
3.5 IB2=50
IC2
3.0
Collector Current IC, mA
IC1 IB1=30
2.5
U
2.0
1.5
- A
T
VCE=5V
1.0
E A
0.5
I- F
E &
-
0.0
B
0 2 4 6 8
A
Collector to Emitter Voltage VCE, Volts
L
EC
Fig.M3 I C versus VCE characteristics of given BJT
E L
3. Mark the points I B1 , I B 2 , I C1 , I C 2 as shown in the Fig.M3 and note down the
values.
4. I B = I B 2 I B1 and I C = I C 2 I C1
5. Calculate the a.c forward current gain of the given transistor using the
I C
formula h fe = .
I B
Determination of hoe :
1. The measured data of the output characteristics are given in Table2.
2. Draw the I C versus VCE characteristics as shown in the model graph given as
Fig.M4.
25
Table 3. Frequency Response characteristics of the given Amplifier
Vin = 20mV
Output
Frequency Voltage Gain Gain in dB
S.No Voltage Vo
(Hz) Vo / Vin 20 log (Vo/Vin)
(Volts)
1 20
2 40
3 60
4 80
5 100
A U
6 200
T-
7 400
EA
8 600
I- F
9 800
E &
10 1000
B -
11 2000
L A
12 4000
E C
13 L
E8000
6000
14
15 10000
16 20000
17 40000
18 60000
19 80000
20 100k
21 200k
26
3.5
IC2 IB=50
3.0 IC1
Collector Current IC, mA 2.5
2.0
1.5
1.0
0.5
VCE1 VCE2
0.0
0 2 4 6 8
T -
Fig.M4 I versus V characteristics of
E A given BJT
C CE
asF
3. Mark the points I , I , V and V
I - shown in the Fig.M4 and note down
C1 C2 CE1 CE 2
the values.
E &
4. I = I I and V = VB- V
1. The amplifier for which the analytical voltage gain is to be estimated is given in
Fig.9.
2. The equivalent circuit of the given transistor amplifier can be drawn as shown
in Fig.10 using the hybrid equivalent model obtained in the previous sections.
3. The theoretical mid band voltage gain of the amplifier can be calculated using
the formula
h fe R L'
AV =
(
hie + hie .hoe hre .h fe R L' )
27
A U
T-
EA
I- F
E &
B-
L A
EC
EL
28
Experimental measurement of the mid band voltage gain
frequency graph.
5. Compare the measured mid band gain with the analytically obtained mid band gain.
Result:
U
The h-parameters of the given transistor were obtained from the input and
A
-
output characteristics. The h-parameter values obtained are summarized below.
T
E A
Parameter
I-
Measured Values F Unit
E &
hie
B - Ohms
hre
L A No dimension
EC
L
h fe No dimension
hoe
E mho
29
+Vcc
Rc
T1
V2
V1 NPN NPN
SL100 SL100
RE RE
re
RE
A U
- amplifier
-VEE
A T
Fig.1 Double ended input single ended output Differential
E 15V D.C.
-F
+ -
& I
- E
B
RL
LA
7.5K
Vo
V1
NPN
E C NPN
V2 +
EL
SL100 SL100 V DMM
-
500 +
VCM 1.2A 1.5V
-
+
RE V DMM
7.5K -
-
15V
+
30
Exp. No:
Date :
A B d 1 2
L V = V +2 V
C
1 2
Common mode signal cm
E
ELmode gain A = where V is the output when V = 0
V
Differential d
od
od cm
Vd
Vocm
Common mode gain Acm = where Vocm is the output when Vd = 0
Vcm
Ad
Common Mode Rejection Ratio (CMRR) =
Acm
CMRR is a good indicator of the ability of the differential amplifier to reject the
common mode input signal while amplifying the differential mode input signals.
A
Common Mode Rejection Ratio (CMRR) in dB = 20 log d
Acm
31
S 15V
+ -
RL
7.5K
Vo
AU
V1 V2 +
NPN NPN
SL100 SL100
T- V DMM
A
-
F E
+
& I- VCM
500
1.2A
1.5V
+
E
1.5V 500 -
- 1.2A
-
AB
+
+
LRE V2 DMM
C
V1 DMM 7.5K -
-
L E -
E +
15V
32
Fig.1 shows the most practical and widely used form of differential
amplifier.This is called doubled ended input since it accepts differential inputs. But the
output is not differential but is taken with respect to the ground. Therefore, the output is
single ended. This has many applications because it can drive single ended loads like
Common Emitter amplifiers, emitter follower etc. This type of differential amplifier is
useful as the input stage for most of the high gain amplifiers. By theoretical analysis, it
can be proved that
Rc
Ad
2re
Rc
Acm
2 R E + re
A U
-
where re = ac emitter resistance
25mv
A T
E
= where I c in mA
F
Ic
I -
E
d
&
Theoretical calculation of A , A and CMRR: cm
R = R = 7.5 k
C E
B -
r =
25mv
=25 if I =1mA. L
A
C
e c
I
E
c
EL
R
A d
c
2r e
7500
= = 150
2 25
Rc
Acm
2 R E + re
7.5k
= = 0.5
2 7.5k
150 A
= 300; CMRR in dB = 20 log d = 20 log[300] = 49.5 dB
Ad
CMMR = =
Acm 0.5 Acm
33
Table 1. Estimation of common mode gain
A U
Mean Acm =.
T-
E A
F
Table 2. Estimation of differential mode gain
I-Actual
E&
S.No V1 V2 Vd = V1 V2 Measured V1 + V2 ActualVod
Vcm = Ad =
B-
(V ) (V ) (V ) Vo Vod 2 Vd
(V ) (V ) (V )
1 0 0
LA
2 0.005 -0.005
EC
3 0.01 -0.01
E L
4 0.015 -0.015
5 0.02 -0.02
6 -0.005 0.005
7 -0.01 0.01
8 -0.015 0.015
9 -0.02 0.02
10 -0.025 0.025
Mean Ad =.
34
Procedure
Experimental estimation of common mode gain ( Acm )
1. Give connections are as per the circuit diagram shown in Fig.2.
2. Note down the measured output voltages ( Vo ) for various common mode
input voltages ( Vcm ) in the Table 1.
3. Calculate the actual common mode output voltage ( Vocm ) by subtracting the
measured output voltage Vo when the Vcm =0V.
4. Estimate the common mode gain ( Acm ) using the
ActualVocm
formulae Acm = .
Vcm
5. Calculate the mean Acm .
Experimental estimation of differential mode gain ( Ad )
1. Give connections are as per the circuit diagram shown in Fig.3.
U
2. Note down the measured output voltages ( Vo ) for various input voltages
A
V1 and V2 in the Table 2.
T-
A
3. Calculate the actual differential mode output voltage ( Vod ) by subtracting
E
I- F
the measured output voltage Vo when V1 and V2 were set to 0V.
4. Estimate the differential mode gain ( A d ) using the
E &
-
ActaualVod
formulae Ad =
B
.
Vd
5. Calculate the mean Ad .
L A
EC
L
Ad
CMMR =
Result
Acm
E
For the given BJT differential amplifier differential mode gain , common mode
gain and CMMR are theoretically calculated. By conducting experiments on the given
BJT differential amplifier, the same parameters were practically measured. The results
are tabulated as follows:
Differential mode Common mode CMRR in dB
gain ( Ad ) gain ( Acm )
Theoretical 150 0.5 49.5
Experimental
The experimental values are matching closely with the theoretical values.
35
A
1N 4007
D3 D2
1N 4007
Vsin
A=10V
F=50 Hz ~ D1
1N 4007
R1
1K
D4 .
B 1N 4007
A U
Fig.1 Circuit diagram of a Bridge rectifier with- resistive load
A T
F E
I -
E &
B -
LA 1N 4007
D3 C
E
D2
Vsin
E L1N4007
A=10v
F=50Hz ~ D1
R1
1N4007
1K
D4 .
C5
1000 UF
1N 4007
Fig.2 Circuit diagram of a Bridge rectifier with resistive load and capacitor filter
36
Exp. No:
Date :
SIMULATION OF FULL WAVE BRIDGE RECTIFIER WITH AND
WITHOUT FILTER USING ORCAD SOFTWARE
Aim
To simulate the function of a full-wave bridge rectifier with and without filter
using ORCAD software.
Apparatus Required
Theory
A U
T -
The circuit diagram of a Bridge rectifier with resistive load is shown in Fig.1.
A rectifier is an electronic circuit which converts a.c.Avoltage into a pulsating d.c.
&
positive and point B becomes negative, the voltages
E
diodes are
B -
i. LA with respect to cathode
Anode of diode D2 is positive
Anode of diode E
C
ELD4 is negative with respect to cathode
ii. D1 is positive with respect to cathode
The diode which has its anode positive with respect to cathode is forward biased.
Therefore, only diodes D2 and D1 will conduct. These two diodes will be in series
through load.
During the negative half cycle of a.c supply, point A becomes negative and point B
becomes positive. The voltages on the anode and cathode of four diodes are
37
Output wave form (without filter)
4.0v
2.0v
0v
-2.0v
0ms 10ms 20ms 30ms 40ms 50ms 60ms 70ms 80ms 90ms 100ms
A U
T-
E A
I- F
E &
B -
A
Output wave form (with filter)
4.0v
L
EC
2.0v E L
0v
0s 0ms 20ms 30ms 40ms 50ms 60ms 70ms 80ms 90ms 100ms
38
iii. Anode of diode D2 is negative with respect to cathode
During the negative half cycle of a.c supply only diodes D4 and D3 will conduct.
The conventional current flow is in the same direction as that of the previous half cycle
of a.c supply and therefore the load voltage is pulsating d.c in nature.
When a filter capacitor is connected across the load as shown in Fig. 2, the a.c.
components in the pulsating d.c are filtered and therefore an almost constant d.c voltage
is obtained.
Simulation Procedure
A U
1. To open PSPICE ORCAD: Go to programs in start menu and select ORCAD
capture.
T-
E A
I- F
2. To open a new project: Select File option in the main men. Then select new.
&
Another pop-up window appears in the select project option. Now type your file
E
B -
name and select analog or mixed A/D in the window that appears and click at OK.
L A
A window will appear, there select create Blank Project and enter. Now a
C
new schematic page will open up.
E
E L
3. To place the components: Select parts icon (second icon from the top) in the tool
palette (right side of the screen) or select place option in the main menu, then select
part in the pull down menu or press shift +P
4. To select the required components from the components library: Select the
library listed in the library window, a list of components available in that library
will be displayed in the list window there select the appropriate component. The
component (part) name will appear in the part window and the circuit symbol will
appear in the display box then click OK and place them in the schematic page.
39
A U
T-
EA
I- F
E &
B-
L A
EC
EL
40
5. To wire the components: Select wire (third icon from the top) in the tool palette or
select place option in main menu, select wire in the pull down menu. A pointer cursor
appears, click and drag to wire the components.
6. To simulate the circuit: Select PSPICE in main menu, select new simulation profile
give a file name and click at create.
A window will appear on which enter the voltage probe, differential probe
etc., from the tool bar and place them in the required position in the circuits.
Now again select PSPICE option in the main menu and select Run. Observe
the load voltage waveforms for both cases which will be as shown in Fig.3 and
Fig.4.
A U
Result:
T -
The operation of full-wave bridge rectifier A
E
with and without filter was
simulated using ORCAD software.
I -F
E &
B -
LA
E C
EL
41
A U
T-
EA
I- F
E &
B-
L A
EC
EL
42
Exp. No:
Date :
Aim
To simulate the function of complementary symmetry power amplifier with R load
using ORCAD software.
Apparatus Required
Theory
A U
T -
Fig. (1) shows the circuit diagram of complementary symmetry power
amplifier. The diodes D1 and D2 are of the same typeA
E
and R1=R2. Since both diodes
are forward biased they help us to maintain +0.6VF
I - at base 1 and -0.6 V at base 2 under
E
follows: During positive half Ccycle of the a.c input voltage or when the signal is
positive, the transistorE
Q1Lis driven to active region and transistor Q2 is driven to cut
off region. This is illustrated in Fig.2. The circuit operates as a common collector
amplifier or emitter follower with voltage gain almost equal to one. This implies that
the entire input appears across the load.
In the negative half cycle or when the input signal turns negative, the transistor
Q2 is driven to active region and Q1 is driven to cut off region. This is illustrated in
Fig.3. Again the PNP transistor operates as an emitter follower and the entire input
appears across the load.
Thus in one full cycle, the NPN transistor conducts during positive half cycle
and PNP transistor conducts during negative half cycle. Thus the output will be
43
R1 +12v
+ -
n
1k
p Q1
2N 3055
n
D1 1N 4007
A RL
D2 1N 4007 1K
Vin p B
Vin (1Vpp)
f (1kHZ) Q2
n
2N2955
1k p -12v
- +
R2
A U
-
Fig 1: Circuit Diagram of Complementary Symmetry Power Amplifier
v T
o +12
E A
I -
n F
&
p Q1
E
2N 3055
+
B - n
LA
Vin
A +
C
- RL
L E B -
1K
Vo
E
Fig.2 Circuit operation during positive half cycle of the a.c signal
p
n Q2 A RL
1K
2N 2955 Vo
p +
- B
Vin
+ -12v
o
Fig. 3. Circuit operation during negative half cycle of the a.c signal
44
available in both half cycles. But the direction of the current differs in both half cycles
as shown in Fig. 2 and Fig.3. The load current flows in from A to B in the positive half
cycle and it flows from B to A in negative half cycle.
Procedure
2. To open a new project: Select File option in the main menu, then select new,
another pop-up window appears in that select project. Now type your file name and
select analog or mixed A/D in the window that appears and click at OK.
A U
A window will appear, there select create Blank Project and enter. Now a
new schematic page will open up. T-
E A
I- F
3. To place the components: Select parts icon (second icon from the top) in the tool
E &
- shift +P
palette (right side of the screen) or select place option in the main menu, then select
B
part in the pull down menu or press
LA
E
4. To select the requiredC components from the components library: Select the
E L library window, a list of components available in that library
library listed in the
will be displayed in the list window there select the appropriate component. The
component (part) name will appear in the part window and the circuit symbol will
appear in the display box then click OK and place them in the schematic page.
5. To wire the components: Select wire (third icon from the top) in the tool palette or
select place option in main menu, select wire in the pull down menu. A pointer
cursor appears, click and drag to wire the components.
6. To simulate the circuit: Select PSPICE in main menu, select new simulation
profile give a file name and click at create.
45
12v
R1
+ _
1K Q1 V2
C
Q2N3053
B
D2 E
DIN 4007
+ R3
VOFF =0
1K
V1
VAMP =0.5v D1
_ DIN 4007 Q2 C
F=1000Hz
B Q2N2907
R2 E 12v
_ +
1K
V3
A U
Fig.4 Simulation Circuit diagram of complementaryT
-
A
symmetry power amplifier
500mv
E
I -F
E &
0 mv
B -
LA
-500mv
E C
EL
0ms 1ms 2ms 3ms 4ms
Time
500uA
0uA
-500uA
0ms 1ms 2ms 3ms 4ms
Time
Fig.6 Output (load) current
46
A window will appear on which enter the voltage probe, differential probe etc.,
from the tool bar and place them in the required position in the circuits.
Now again select PSPICE option in the main menu, select Run. Observe the
waveforms of input voltage and load current that will resemble the waveforms
shown in Fig.5 and Fig.6.
Result
A U
T-
E A
I- F
E &
B -
L A
EC
E L
47
R1 +12v
+ -
n
1k
p Q1
2N 3055
n
D1 1N 4007
A RL
D2 1N 4007 1K
Vin Vin (1Vpp)
p B
f (1kHZ) n Q2
2N2955
1k p -12v
- +
R2
A U
Fig 1: Circuit Diagram of Complementary Symmetry Power Amplifier
T-
o +12v
E A
n
I- F
E&
p Q1
2N 3055
B-
+ n
LA
Vin +
-
A RL
EC -
1K
Vo
E L B
Fig.2 Circuit operation during positive half cycle of the a.c signal
p
n Q2 A RL
1K
p
2N 2955 + Vo
- B
Vin
+ -12v
o
Fig. 3. Circuit operation during negative half cycle of the a.c signal
48
Exp. No:
Date :
COMPLEMENTARY SYMMETRY POWER AMPLIFIER
ANALYSIS AND DIRECTION CONTROL OF D.C MOTOR USING
COMPLEMENTARY SYMMETRY POWER AMPLIFIER
Aim:
U
Fig. (1) shows the circuit diagram of complementary symmetry power
A
-
amplifier. The diodes D1 and D2 are of the same type and R1=R2. Since both diodes
T
A
are forward biased they help us to maintain +0.6V at base 1 and -0.6 V at base 2 under
E This helps us to minimize
- F
zero signal condition. Therefore, it is class AB operation.
I
cross over distortion.
E &
-
The operation of the amplifierBfor an a.c input voltage can be explained as
follows: During positive half cycleLAof the a.c input voltage or when the signal is
E C to active region and transistor Q2 is driven to cut
positive, the transistor Q1 is driven
In the negative half cycle or when the input signal turns negative, the transistor
Q2 is driven to active region and Q1 is driven to cut off region. This is illustrated in
Fig.3. Again the PNP transistor operates as an emitter follower and the entire input
appears across the load.
Thus in one full cycle, the NPN transistor conducts during positive half cycle
and PNP transistor conducts during negative half cycle. Thus the output will be
available in both half cycles. But the direction of the current differs in both half cycles
49
R1 +12
v
n
+ -
1k
p Q1
2N
n
1N 4007
L1
22 f X1 o
o To Y plates of
A CRO
+ - Y1 o RL
1K
Vo
1N 4007
Vin Vin (1Vpp) B
f (1kHZ) Q2
2N2955
R2 -12v
- +
1k
U
Fig. 4. Experimental circuit diagram for a resistive load
- A
A T
F E
& I-
- E
A B
L Output voltage Waveform
C
Fig. 5 Model
L E 1K v +12
-12v
o E R1 n
1k p Q1
2N 3055
n
D1 1N 4007
Vin
10k DMM
v M 12V DC Motor
D2
1N 4007 p
n Q2
1k 2N2955
R2 p
o - +
-12v -12v
1k
50
as shown in Fig. 2 and Fig.3. The load current flows in from A to B in the positive half
cycle and it flows from B to A in negative half cycle.
Experimental Procedure:
Connect up and energise the circuit as shown in Fig. 4.
1. Set Vin = 1 V peak to peak and set the frequency to 1000 Hz.
2. Connect X1 with L1 and observe the waveform of output voltage (Vo). In this
case you get only positive half cycles in the output. This indicates that the NPN
transistor is responsible for the amplification of the positive input.
3. Disconnect X1 from L1 and now connect Y1 to L1 and observe the waveform of
output voltage (Vo). In this case you get only negative half cycles in the output.
A U
This indicates that the PNP transistor is responsible for the amplification of the
positive input.
T-
E A
4. Then connect X1, Y1 and L1 all together and observe waveform of the output
I- F
voltage (Vo). You will get a waveform as shown in Fig. 5.
E &
-
Vo( p p )
5. The gain of the amplifier can be estimated using AV = .
A B Vin( p p )
51
Table 1. Observation Table for Direction control of D.C motor
52
Result:
The complementary symmetry power amplifier was studied and the gain of the
amplifier is measured to be . The cross over distortion was found to be absent in
this amplifier due to Class AB operation. The same amplifier was used to drive a DC
motor load and control its direction. The performance of the complementary symmetry
power amplifier was found to be satisfactory.
A U
T-
EA
I- F
E &
B -
L A
EC
E L
53
TO - 220 PLASTIC PACKAGE OF IC 7805
7805
A U
1 2 3
T-
E A
I F
- FOR IC 7805
&
TYPICAL CIRCUIT CONNECTION
E
B -
Unregulated I/P
V
LA IC 7805 V
in out
Regulated O/P
7.5V to 35V
E C 1 3 5V, 0 - 1A
E L 2
0.33F Ci 0.1F Co
54
Exp. No:
Date:
Aim:
Components Required:
A U
-
Step down Transformer 1, 230V/15V` 1 No.
Diodes (BY 127) T
4 Nos.
A
IC 7805 E1No.
Capacitor 1000F, 0.1F
& I-F 1No.
Milli ammeter (0 - 100mA)
- E 1 No.
AB
Voltmeter (0 - 40V) 1 No.
Rheostat 3.6K, 0.3A L 1 No.
EC
Specifications of IC 7805:
E L
Output Voltage 5V DC
Max. Input Voltage 35V DC
Max. Output Current 1A
IC 7805 is available in TO -220 plastic package
Theory:
55
(0 - 1A) MC
U
1A Vin Vout +
A
L 7805 A
-
Fuse 1 3 SPST
T
2
A
FE
DPST SWITCH
5 0 0 , 1.2A
+ +
-
230V + 1000 F
I
AC BY 127 V 25V 0.1 F V (0 - 25V) MC
&
SUPPLY
E
(0 - 40V)
B - MC
LA
NL
N
C
AUTO STEP DOWN
TRANSFORMER TRANSFORMER
E
230/270V 230/15V
56
by at least the dropout voltage. The 78XX series of ICs provide three terminal positive
voltage regulators with seven output voltage options as given in the Table 1.
&
between input and output voltage as shown in Fig.1.I
input and output voltages (Vin ~Vo) calledE
B - dropout voltage must be typically 2V. The
current changes.
Procedure:
regulator changes (e.g., by amount Vin ), the output voltage will change (e.g., Vo ).
Line regulation, S v , describes how the voltage regulator hold its output voltage
57
Model graphs
5
Load Voltage, Vo (Volts)
A U
0
T - 24 26
Input Voltage, V (Volts) A
6 8 10 12 14 16 18 20 22
F
in
E
I - (Model Graph)
&
Fig.3 Line Regulation Characteristics
E
B - Characteristics
LA
Load Regulation
E C Ideal Case
Load Voltage Vo, (Volts)
EL
5.0
Practical Case
4.5
0 200 400 600 800 1000
Load Current IL, (mA)
58
Vo
constant when the input voltage changes, and is defined as S v = . Good regulators
Vin
have small line regulation. The line regulation characteristics explain the ability of a
voltage regulator to maintain a predetermined output voltage for variation in input
voltage at a constant load. Therefore, it is important to maintain the load constant
during this study.
E &
the input voltage as shown in the model graph shown in Fig.3.
6. Calculate the line regulation factor- S from the formulae
A B v
S =L
V
C
o
mV / V
V
v
L E in
E
II. Load Regulation Characteristics:
59
Table 1. Line Regulation Characteristics
Load Current, I L = 500mA
Input Load Voltage ( Vo ) Vo
Voltage ( Vin ) Sv =
(Volts) Vin
(Volts)
8
A U
10
T-
12
E A
14
I- F
16
E &
18
B -
20
L A
22
EC
E L24
60
Fig.4. Thevenins equivalent Circuit of the voltage regulator
A U
T -
1. Give the connections as per the circuit diagram shown in Fig. 2.
2. Now keep the load resistance value maximum and
E Aclose the SPST switch.
3.
I -F
Set the input voltage at pin 1 of 7805 at 15V.
4.
E & of 5mA and note down in Table 2.
Measure the output voltage at a load current
5.
B
Repeat the measurements for a load - current starting from 50 mA to 1000 mA at
an interval of 50mA.
L A
6. C
Obtain the load regulation characteristics by plotting the output voltage against
E in the model graph shown in Fig.5.
the load current asLshown
7. E resistance ( R ) from the formulae
Calculate the output o
Vo
Ro = mV / A
I L
Precautions
61
Table 2. Load Regulation Characteristics
Input Voltage Vin = 15V
Load Current ( I L ) Load Voltage ( Vo ) Vo
Ro =
( mA) (Volts) I L
5
A U
100
T-
200
E A
300
I- F
400
E &
500
B -
600
L A
700
E C
L800
E900
1000
62
Result:
A fixed voltage regulator was constructed and tested using IC 7805. The line
regulation and load regulation characteristics were studied. The line regulation factor
and output resistance were estimated.
A U
T-
E A
I- F
E &
B -
L A
EC
E L
63
Exp No:
Date:
Aim
To design a class-A amplifier using Bipolar Junction Transistor and to obtain
its frequency response using electronic workbench circuit simulation software.
Theory
The class-A amplifier is, basically a common emitter amplifier as shown in
Fig.1. In the class-A amplifier the transistor bias and amplitude of the input signal are
such that the output current flows for the complete cycle (i.e. 360) of the input signal.
This condition is achieved by locating the Q-point somewhere near the centre of the
A U
- so that the circuit can
load line. This leads to obtaining the maximum output signal. The operation of the
amplifier is restricted to smaller central region of the loadTline,
operate in the linear region of the load line. The largeA
E
-F and hence produce amplitude
signals may shift the Q-point
I
& the linear region of the load line,
into non-linear regions near saturation or cut-off
-
distortion. Since the amplifier operates over
E
B
LA
therefore the output waveform is almost similar to the input waveform.
Design
E C
E L biasing network is used in this amplifier
The voltage divider
From the circuit,
V = I C R C + VCE + VE
CC
=I R +V + I RE
C C CE C
since IB is very small, I I E
C
VCC = VCE + I C R C + I E R E
= VCE + I C (R C + R E )
V VCE
I = CC (1)
C RC + RE
65
15V DC
+ -
VCC
R1 Rc
32k 5.6k
CC2
+ -
CC1 10uf
10F
+ - SL100
10uf
22F
RL CL
0.01uf
10k
V
20Hz to 20KHz
Vin=20mv
R2 RE + CE
5.6k
1K - 22uf
A U
T-
E A
I- F
Fig.1. Class-A amplifier.
E &
B -
L A
EC
E L 3dB
Voltage Gain
(AV) in dB
Frequency (Hz)
66
Design of RC and RE
R + R E = 6.6k (2)
C
For better amplification, the voltage drop across RC should be low.
Let us assume that the emitter voltage is one tenth of supply voltage.
V 15
VE = CC = = 1.5V
10 10
V
RE = E
IE
A U
=
1.5
T-
1.5 10 3
EA
= 1k
I- F
Hence RC = 6.6 1 = 5.6 k
E &
B -
A
Now,
V
R2
= VBE + VE
L
E C
VBE = 0.7V for silicon transistor
EVL
V = 2.2V
R2
CC
I1 = (3)
( R1 + R2 )
IC
=
IB
As = 40
I 1.5 10 3
IB = C =
40
= 0.0375mA
67
A U
T-
EA
I- F
E &
B-
L A
EC
EL
68
Design of Biasing Resistors R1 and R2
I1 = 10 I B
= 10 0.0375 103
= 0.375mA
Substitute I1 in equation (3)
VCC
R1 + R 2 =
I1
15
=
(0.375 10 3 )
= 40 k (4)
U
V2
A
R2 =
I2
T-
=
2.2
(0.3375 10 3 ) EA
I- F
&
= 6.51k
Substitute R2 in equation (4)
- E
R1 + R 2 = 40 k
A B
R = 40 6.5 = 33.5 k
1
L
EC
L
Design of CC1,CC2 and CE
E
The signal is coupled to the base of the transistor through a capacitor CC1. The
purpose of this capacitor is to block dc so as not to disturb the bias conditions already
established. The value of CC1 should be chosen, sufficiently large so that for
wide signal frequencies of our interest it acts as a short circuit. Obviously, CC1
will cause the amplifier gain to drop at low frequencies and will cause the
gain to be zero at dc.
The output signal voltage at the collector is coupled to a load resistance RL
through another coupling capacitance CC2. Again CC2 should be chosen large in
69
A U
T-
EA
I- F
E &
B-
L A
EC
EL
70
order to act as a perfect coupler at all frequencies of interest. Let us assume R
is 10 times greater than that of XC,
XC1 = 100
1
100 =
2 100 C
1
At the lowest frequency 1k =
2 20 C
Therefore CC2 = 7.96F 10F
A U
-
The bypass capacitor CE acts as by-pass to the amplified a.c. signal.
T
A
Let XE << RE
F E
I-
RS
= 10
X CS
E &
R
XCS = E =
1k
= 100
B -
A
10 10
L
CE =
1
EC
22F
L
2 3.14 100 100
E
.
Procedure
(1) Wire the circuit as per the circuit diagram shown in Fig.1. using electronic
work bench software.
(2) Keep the input voltage at 20mV.
(3) Keeping the input voltage constant, vary the input frequency from 20 Hz to
20 kHz and note down the corresponding output voltage.
(4) Calculate the gain in dB using the formula given below
V
Gain = 20 log O
Vin
(5) Draw the frequency response curve and calculate the band width.
71
Tabulation
Input Voltage = 20 mV
72
Result
Thus the class A amplifier is designed and its parameters have been estimated
and tabulated below
Parameter Theoretical Value Measured Value Unit
Voltage Gain
Bandwidth
Exercise
(1) What is class A amplifier?
(2) What is the use of bypass capacitor?
(3) What is the need for estimation of bandwidth?
A U
T-
EA
I- F
E &
B -
L A
EC
E L
73
VDD
10F
22F
Cc2
VG
Cc1 Vs
RL
20mV RG
3k 5.3F
20Hz 20kHz
Voltage Gain
EC
E
(AV) in dB L
Frequency (Hz)
74
Exp. No:
Date:
Aim
(i)To Design a common source FET amplifier
(ii)To study its frequency response characteristics
Theory
Capacitors CC1 and CC2 are used as coupling capacitors. Capacitor CC2 couples
U
the a.c. signal to the load, whereas CC1 couples the input signal to the gate.
A
T
The resistor R connected in the source lead of the FET - amplifier provides self
A
S
biasing and thermal stability. This resistor should be adequately bypassed by bypass
F E
capacitor to avoid a degenerative effect for d.c. due to negative feedback.
-
V = I .R Therefore V I = 0-I R = -I R
S D S
E & GS D S D S
Circuit Description LA
E Cis used in audio frequency amplifier such as FET
this should extend in L
A signal generator
Ethe range of 20Hz to 20 kHz. Since this is the nominal
frequency range to which the ear is sensitive.
FET is biased using a combination of fixed bias and self-bias. Though small
gate current flows through RG, this current increases with temperature its value
imposes an upper limit to RG. Otherwise the bias point of the FET becomes
temperature dependent.
The signal is coupled to the gate of the FET through a capacitor CC1. The
purpose of this capacitor is to block dc so as not to disturb the bias conditions already
established. The value of CC1 should be chosen, sufficiently large so that for
wide signal frequencies of our interest it acts as a short circuit. Obviously, CC1
will cause the amplifier gain to drop at low frequencies and will cause the
gain to be zero at dc.
75
Tabulation
Input Voltage (Vin) = 20mV
76
RS 3k
XCS = = = 300
10 10
1
CS = = 5.307 F
2 3.14 100 300
2I DSS 2 4mA
g mo = =
VP 6
g mo = 1.33m mho
V
g m = g mo 1 GS
VP
(3) 3 3
U
= 1.33 10 3 1 = 1.33 10 1 + = 1.95 10
3
A
6 6
3
AV = g m Rd = 19.5 10 10k
T-
E A
F
AV = 19.5
& I-
E
Design of CC1 and CC2
B -
X C1 = 0.1 5k = 500
L A
C C1 =
1
=
EC 1
5F
L
2 f X C 1 2 100 500
R
E
X C2 = D
10
1 1
CC 2 = = 10 F
2 f X C 2 2 20 1000
Procedure
1. The input signal is given from a signal generator and the input
voltage is maintained at 20mV
78
4. Mid band gain is noted from the frequency response characteristics
Result
A FET common source amplifier was constructed and tested. The frequency
response characteristic was studied. The voltage gain and bandwidth were estimated.
Questions
U
2. What is the advantage of using FET amplifier?
3. What is the Bandwidth of an amplifier?
- A
4. Explain why the gain is expressed in dB?
A T
F E
& I-
- E
A B
L
EC
E L
79
A U
T-
EA
I- F
E &
B-
L A
EC
EL
80
Exp. No:
Date:
Aim
E
The block diagram of feedback system is shown in Fig.1. in which the loop
gain kAv is negative.
Vo '
The overall gain with feedback, is shown to be
Vi
Vo ' AV
A Vf = = ,
Vi 1 - kA V
Vo '
where AV is the amplifier gain, , and k is the portion of the output voltage fed
Vi '
back to the input. Obviously, if kAv is negative, the overall gain is reduced. But when
kAv is positive, it provides positive feedback. However the effect of positive feedback
81
Amplifier Vo'
Vi Vi'
gain, AV
A U
T- -
A V'
+ Amplifier
FE
Vi s2 Vi' o
- AV +
I -
-
E & +
kVo'
B -
Network
Vo
LA
k
+ -
EC
Fig.2. Block Diagram ofL
E an Oscillator in which both A V and K are negative
82
on the amplifier performance depends on how much feedback is introduced, as shown
by the following typical calculations.
40 40 40
Case(i) A vf = = =
1 - 0.01 40 1 - 0.4 0.6
= 66.7
40 40 40
Case(ii) A vf = = =
1 - 0.02 40 1 - 0.8 0.6
= 220
40 40 40
Case(iii) A vf = = =
1 - 0.025 40 1 - 1 0
=
A U
This shows that the gain will increase with a larger amount -of positive feedback until
a critical stage is reached where seemingly the gain A
T
E is infinite. Assuming that the
feedback network is frequency selective network,Fthe infinite gain is achieved for a
I -
E & is sustained at the output of the
particular frequency. So the particular frequency
amplifier. In other words, the circuit has- stopped amplifying and started oscillating.
A Band the output will continue. Its frequency
L or the amplifier, or both.
At this stage, the input is removed,
E C
depends upon the feedback network
EL
Requirements for Oscillation
Av
A vf =
1 kA v
kAv is made slightly larger than 1, at which the above equation does not hold good,
since the circuit no longer acts as an amplifier.
Since k cannot usually be greater than 1 (if k is an attenuation network), then,
kAv 1 means that Av 1/k.
Say that 1.5% of the output of an amplifier is fed back positively to the input.
The minimum gain of the amplifier for oscillations to occur is
83
Vc
C
I
Vi R Vo
A U
T-
EA
VR I
I -F
E &
B -
LA
EC
E L
Vc Vi
Fig. 4. Phasor
Fig. 2Diagram of RC Network
84
1 1 100
Av = = = 66.6
k 0.015 1.5
Actually, if kAv > 1, the gain of the whole system will adjust itself
until kAv = 1.
Thus, if Av = 100 and k = 0.005 (0.5%), kAv = 0.5, and the circuit will not
oscillate. But if the feed back is increased to 2%, (k=0.02) and the system will
continue to oscillate, since kAv=2, which meets the requirement for oscillation. For
linear oscillations, in which the output is relatively free from distortion, KAv should
be slightly greater than one.
A U
Consider the diagram in Fig.2. in which the amplifier causes a phase shift of
180between v and v ' (A is negative as in a single stage CE
T - amplifier). In order to
A a phase shift of another
i o v
E
provide positive feedback, the feedback network must provide
180 so as to provide a signal that can replace v '-F
I and not cause more attenuation than
& 1. This condition of unity loop gain,
i ,
E
- for oscillation and may be met by k and A
1/A , since kA must be equal to or greater than
v v
B
LAWhen this criterion is satisfied, switch S-2 can
(kA =1), is called the Barkhausen criterion
v v
E C
be closed which in turn removes and the output will continue. Its frequency may be
E
different, depending uponL the particular circuit components.
85
+ _
12V DC
33K 2K
E
CH-I of CRO
L
0.01F
EC
C C C C
L A B
0.01F 0.01F 0.01F 0.01F
-
SL 100
E
NPN
& I- F
CH-II of CRO
10K 1K 25F
+
R 1K
E A
R 1K R 1K
T
-
-
25 v
A U
Fig.5.
Fig 3.Circuit
RC Phase of RC Phase
DiagramShift Shift Oscillator
Oscillator
86
Derivation of Frequency Formula
Let us take one RC network as shown in Fig.3.. Let I be the current flowing
through the RC circuit. The phasor diagram of the circuit is as shown in fig 2. Taking
I as the reference vector, Vo is in-phase with I and Vo is o ahead of Vi and represents
a phase shift of o.
To find o
Vc
From figure 2, tan o = , Where Vc = I Xc and Vo = I R
Vo
1
Therefore, tan o =
2fRC
A U
Assuming 60o phase shift from a single RC circuit.
T-
tan 60o =
1
E A
2fRC
I- F
E &
-
1
B
3 =
2fRC
L A
C
1
Therefore, f=
2 3RC
L E
E
If we include the additional current that flows through C for the other sections, then
the frequency is given as
1
f=
2 6 RC
1
f=
2 6 R C
87
y
x
y
A U
T-
A
Specifications Of SL 100 NPN Transistor
F E
I-
Absolute maximum ratings
E &
BVCBO (V) = 60 V, BVCER (V) = 50 V, BVEB0 (V) = 6.0 V, Ic (A) = 0.5 A
C
Maximum Collector dissipation
E
EL
88
Determination of Feedback Circuit Parameters for given frequency
1
6.5 1000 =
2 6 R 0.01 10 6
R1000=1k
Precautions
A U
-
1. Check the polarity of the power supply
2. Identify the transistor terminals properly
A T
3. The DC power supply should not exceed 12Volt.
F E
& I-
E
Procedure
B -
A
1. Give connections as per the circuit diagram shown in fig 5.
2. L the transistor to the channel-1 of CRO.
Connect the collector of
3.
E C supply.
Switch on the power
4.
E L and find the frequency of waveform using CRO.
Trace the waveform
st
5. Now connect the channel-II of CRO to the output of the 1 RC then to
2nd RC and then to 3 rd RC and calculate the respective phase difference
of each RC network.
6. Compare the phase difference and frequency of the waveform with
theoretical
values.
89
A U
T-
EA
I- F
E &
B-
L A
EC
EL
90
Phase Difference from the Waveform
1. Adjust the CRO settings (Time/Div and Volts/Div knobs). Obtain the
waveforms, Shown in fig 6. Trace the waveforms.
a
2. Now calculate the phase angle () as = 360 * .
b
Where a No. of divisions between collector output and RC
network waveforms.
b- Time period of the wave form.
3. Repeat the procedure to obtain phase shift for other RC networks with
collector output.
Result
A U
T - phase shift at each
The given RC phase shift oscillator is tested and the
RC network was verified.
E A
I -F
E &
B -
LA
E C
EL
91
A U
T-
EA
I- F
E &
B-
L A
EC
EL
92
Exp. No:
Date:
DESIGN AND TESTING OF COLPITTS OSCILLATOR
Aim
To construct Colpitts Oscillator circuit and to compare the experimental
output voltage frequency with the design value of theoretical frequency of the
oscillator.
Apparatus Required
Components Required
A U
-
SL 100 NPN Transistor
Resistors: 330 , 220 , 3.3k, 100
A T
Capacitors: 0.08 F, 10 F, 100 F
F E
Inductor: 23 mH, 0.1H
& I-
Probe
- E
A B
Principle of Operation
L
E C
The Colpitts oscillator is shown in fig.1. The ciruit can be recognized as
93
+ -
0.1H 12 V
RF CHOKE
3.3 K 220
A U
T- + -
A
10 F ,25v 10 F , 25V
To CRO
+ -
SL 100
F E
& I-
- E +
AB
330 100 100 F,25v
-
L
EC
E L 23mH
0.08 F C1 C2 0.08 F
94
Derivation of Frequency Formula
XL = XC
1
2fL =
2fC
1 C1 C 2
f= Where C =
2 LC C1 + C 2
U
Surge (A) = 1.0 A, ICBO (A) = 1.0 mA, hFE = 40/300, VCE = 5 V, IC = 150 mA
- A
Maximum Collector dissipation at Tc = 25 o is 40W.
A T
F E
I-
Determination of Feedback Circuit Parameters for given frequency
E &
-
Assume the frequency(f) of oscillation to be produced is 5.3kHz
C1 + C 2
0.08 10 6 0.08 10 6
C=
0.08 10 6 + 0.08 10 6
C = 0.04 F
1
f=
2 LC
1
5.3 1000=
2 L 0.04 10 6
L2.9 1O-3H=2.9mH
95
A U
T-
EA
I- F
E &
B-
L A
EC
EL
96
Precautions
Procedure
A U
Result
T-
E A
F
The Colpitts oscillator is constructed,tested and the frequency of
oscillation was estimated.
& I-
Theoretical
- E
AB
Measured Frequency Unit
Frequency
L
EC
E L
97
A U
T-
EA
I- F
E &
B-
L A
EC
EL
98
Exp. No:
Date:
Aim
A U
Components Required
T- - 2 Nos
SK100 PNP transistor
A
E - 2 Nos
I - F
47 k resistors
&
1k resistors - 2 Nos
0.01 FE
B - capacitor - 2 Nos
A
Regulated Power Supply.
L
E C
EL is a device, which generates square waves of its
Theory
Astable multivibrator
own without any external triggering pulse. There is no stable state and there
are two quasi-stable states. In one quasi-stable state, one transistor conducts
(ON state) and the other is in non-conducting state (OFF state) for a
prescribed time (TON). After this time, in the second quasi stable state again
for a prescribed time (TOFF). The waveform generated by such a circuit is as
shown in Fig.1, the second transistor is turned ON while the first transistor is
turned OFF.
99
A U
T-
EA
I- F
E &
B-
L A
EC
EL
100
V
T OFF
T ON Time t (sec)
T
Operation
Practically, no two transistors can have exactly matched
characteristics. The current gain hFE of two transistors can never be same.
U
Assuming the transistor T1 conducts more than transistor T2, let us analyse the
circuit operation.
- A
When the power is applied, the current flowing through
transistor T is more than the current flowing throughTtransistor T . The rising
1
E A V = -0.2V. This is 2
&
applied to the base of the transistor T through
2 1
E
continues until T EisLdriven into saturation and T into cut-off. In this state,
causes a further decrease 2
1 2
When the transistor T1 is in saturation, the whole VCC drops across RC1
i.e., the point. A is at VCE(sat) = - 0.2V. Further, the transistor T2 is at cut-off i.e.,
it conducts no current. As there is no voltage drop across RC2, the point B is at -
VCC.As point A is at - 0.2V,the capacitor C1 starts charging through RB1 towards
-VCC as shown in Fig.2. When the voltage across C1 becomes more than -0.7V,
the transistor T2 is forward biased and starts conducting.
101
A U
T-
EA
I- F
E &
B-
L A
EC
EL
102
-VCC
RC1 RB1
C1
A + -
T1
A U
Quickly, the transistor T2 is in saturation state while the transistor T1 becomes
T - -V to -0.2V.
cut-off. In this state, the potential of point B decreases from
The decrease in potential is applied to the base A
CC
E of transistor T through C .
1 2
B
LA
When T is OFF and T is ON
1
E C 2
EL -VCC
RB2 RC2
C2
B
- +
T2
103
VCC
- +
470
470 37k 37k
RC2
RC1 RB1 RB2
AU
To C.R.O 0.01. F 0.01. F
T-
A
+ C - - +
E
A 1 C2 B
VC1
I- F
E&
T1 B1 B2 T2 VC2
VB1
B -
L A
EC
E L
Fig. 5.Circuit diagram of an Astable Multivibrator
104
As point B is at -0.2V, the capacitor C2 starts charging through RB2 to
potential -VCC. When the voltage across C2 is more than -0.7V,the transistor
T1 is forward biased and starts conducting as shown in Fig.3.
Frequency of oscillations
U
VC = Vini + (Vfin - Vini ) (1-e t/RC)
VC = VCC +(- VCC - VCC) (1-e t/RC)
- A
A T
F E
I-
[Since Vinitial = VCC and Vfinal = -VCC ]
VC = VCC - 2VCC + 2VCC e t/RC
E &
0 = 2VCC e t/RC - VCC
B -
1 t/RC
L A
C
=e
2
TON = RB1C ln (0.5)
L E
TON = 0.69RB1C1 E
The ON time of transistor T1 or the OFF time of transistor T2 is given by
TON = 0.69 RB1C1
Similarly, the OFF time of transistor T1 or ON time of transistor T2 is given by
TOFF = 0.69 RB2C2
Hence, total time period of square wave
T = TON + TOFF = 0.69 (RB1C1 + RB2C2) ..(1)
As RB1 = RB2 = R and C2 = C1 = C, then
105
VC1
0
VCE(sat)
Time t
-VCC
VB1
VCC
0
VBE(sat)
Time t
A U
-
VC2
T
ON OFF ON OFF
EA
VCE(sat)0
I- F Time t
-VCC
E &
TON
B -
T OFF
LTA
C
VB2
VCC
L E
VBE(sat)0
E
Time t
106
From (1)
Design
Specification
A U
f =
1
(Choosing C = 0.01 F)
T-
A
1.38 R B C
F E
RB =
1
& I-
E
1.38 2 10 0.01 10 6
3
B -
RB = 36.23 k = 37 k
L A
EC
VBB VBE(sat)
L
IB =
E
R B
.. (2)
12 0.7
IB = 3
= 3.05 10 4 A = 0.305mA
37 10
VCC VCE(sat)
IC = (3)
RC
Also I C = I B h FE ..(4)
107
(i).Transistor specifications:
Tc = 25oC, hFE(min/max)=40/300
Table.1.
A U
Duty T
-
AT
cycle
E
1
-I F T + T
TON TOFF ON
F=
D= T ON + TOFF
&
(Sec) (Sec) ON OFF
- E
AB
Theoretical Hz
L
Experimental
EC Hz
E L
F . Measured F . Theoretical
% Deviation = 100%
F . Theoretical
108
From (4)
I C = 3.05 10 4 80 = 24.8mA
12 0.2
RC = = 475.806 = 470
24.8 10 -3
Procedure
A U
- values.
3. Measure the TON and TOFF times from the observed waveforms.
A T
4. Calculate the frequency and compare it with theoretical
Result
F E
An Astable multivibrator was designedI-and tested for frequency of 2kHz.
E & were verified and values are
B -
The theoretical and experimental frequencies
A
value is = .. L
tabulated in Table.1.The percentage of deviation in the frequency from design
E C
EL
Exercise
109
A U
T-
EA
I- F
E &
B-
L A
EC
EL
110
Exp. No:
Date:
Components Required
SL100 Transistor - 2Nos.
Resistor 1k - 2Nos.
Resistor 20k,7k,8k - 1No.
Capacitor - 0.01F, 100pF
A U
Theory
T-
E A
I - F
A monostable or one-shot multivibrator has only one stable state.i.e.one
&
transistor is conducting and the other in non-conducting. The circuit remains
C
ON
E
Input
EL
trigger
pulse
Time t (sec)
output
voltage
TON
Time t (sec)
111
A U
T-
EA
I- F
E &
B-
L A
EC
EL
112
After this predetermined time, the multivibrator returns to its original stable
state automatically and remains there until another triggering pulse is applied,
this is explained in Fig.1.
Operation
RC1 R RC2
IC1 C
A U
IC2
-
VCC =VC1
A T VC2 = + 0.2V
E
R1
volt
age IR2
I- F
IB1
-ve
R2
E &
- VCE(sat)= 0.2
AB
T1
T2
OFF I B2
L
ON
EC - VBB
E L
Fig.2 Operation of monostable multivibrator at stable state.
113
A U
T-
EA
I- F
E &
B-
L A
EC
EL
114
R1
VB1 = VBB
R1 + R 2
Quasi-Stable State
L E
E R2
-VBB
R2
VB1 = (VCC + VBB )
R1 + R 2
115
A U
T-
EA
I- F
E &
B-
L A
EC
EL
116
Turn on time
T1 will stay in this quasi -stable state only for a predetermined time. The
capacitor C now begins to discharge through T1 to ground via R with the
polarity as shown in Fig.4. When this voltage goes above 0.7 T2 goes on
again thus making the multivibrator to switch back to the stable state.
RC1
R
- +
C
T1
A U
T-
E A
F
Fig.4.Capacitance charge path when T Iis- ON and T is OFF
E & 1 2
B -
Design
LA
E C
Let the supply voltage Vcc = 6V,V =1.5V,assume h min = 20, Ic(sat) =6
BB FE
mA T = 50msec. L
ON
E
At stable state T2 is ON and T1 is OFF:
117
VCC
+ -
6V
R
RC1 1k 18k RC2 1k
100pF
IC1 C C1
IC2
VC1 R1
4.7UF VC2
8.9k
IR2
A U
T1
IB1 R2 7.3k
T-
C2
-
1.5V
E
IB2 A T2
0.01UF + VBB
I- F
E &
B -
Input
L A
C
trigger
E
pulse
E L
Fig.7.Circuit diagram of monostable multivibrator
118
I C(sat) 6 0.3
I B2(sat) = = = 0.3mA
h FE(min) 20
(ii).Estimation of R:
A U
At quasi- stable state T1 is ON and T2 is OFF:
T-
VC = Capacitor voltage
EA
Vini = Initial capacitor voltage
I- F
E &
B
Vfin = Final capacitor voltage -
VC = Vini
A
L )
+ (V V ) (1-e t/RC
C
fin ini
+(- V -E
VC = VCC
E L V ) (1-e
CC ) CC
t/RC
119
Q1 OFF Q1 ON Q1 OFF
Q2 ON Q2 OFF Q2 ON
VBE(sat)
O
VB2 Time t (sec)
-VCC
+VCC
VCE(sat)
VC2
0
T ON Time t (sec)
A U
T-
E A
I- F
E &
B -
VBE(sat)
L A
C
VB1
E
0
Time t (sec)
-0.82
E L
+VCC
VCE(sat)
0
VC1 Time t (sec)
Fig.8.Shows collector
Collector and
and Base base waveforms
Waveforms
120
TON = RC ln (0.5)
From (1)
TON 50 10 3
C= = = 4.7 F
0.693R 0.693 18 10 3
Assume IB1 (sat) = IB2
When T1 is in conduction
I R1 = I B1(sat) + I R2 = 0.3mA+0.3mA = 0.6mA
0.6mA
VC2 = VCC = 6V
A U
T-
R1
E A
B1
I- F
0.3mA 0.3mA
E &
B -
R2
L A
EC
L
-VBB = -1.5 V
E
Fig.5.Biasing for T1 in quasi- stable state
VB1 = 0.7V
121
A U
T-
EA
I- F
E &
B-
L A
EC
EL
122
I R1 R 1 = VCC VBE(sat) ------------------------------------------ (3)
0.2
8.9 k
A U
T-
A
VB1 = -0.82V
F E
7.3k
& I-
- E
-VBB = -1.5 V
A B
L
C
Fig.6.Base biasing condition for T1 at stable state (T1 OFF)
E
VB1 =
8.9
E L
1.5 = 0.82V (This negative voltage can help the transistor T1
16.2
OFF. Therefore our design is fine. The speed up capacitor C1 is chosen
such that R1C1 = 1 F and hence,
10 6
C1 = = 112.4pF = 100 pF
8.9 10 3
Procedure
123
A U
T-
EA
I- F
E &
B-
L A
EC
EL
124
3. Now apply a pulse at the base of T1 and observe waveform.
4. Note down TON .
5. Compare it with theoretical TON.
Result
A monostable multivibrator was designed and tested.
Theoretical Measured
TON TON
(sec) (sec)
A U
-
Theoretical
A T
F E
I-
Experimental
E &
TON
B - T . Theoretical 100%
. Measured
LA
ON
% Deviation =
T . Theoretical
ON
EC
E L
125
+ +
0 0
+ Positive Voltage Load 1
- Regulator
230v
50Hz
Ac
A U
Supply -
0
I- F
E &
-
AB
- -
L
EC
Fig.1. Block Diagram of Regulated Dual D.C. Power Supply
E L
126
Exp. No:
Date:
Aim
To construct a Dual DC Power Supply and to study its load regulation
characteristics.
Components Required
N-P-N Transistor SL100 ----------- 1No.
BC147 -----------1No.
A U
BC158 ------------1No. T-
P-N-P Transitor SK100 ------------1 No.
E A
-F 2Nos.
1N 4007 Diode--------------------------------4 Nos.
Resistor
I
560, W ---------------
&
- E
330, W---------------- 2Nos.
100, B
A F,25V --------------- 2Nos.
W ---------------2Nos.
Capacitor L1000
Formula
EC
EL
% Load Regualtion =
(V -V )
no load load
100
(Vno load )
Precautions
(1) SPST switches are kept open at the time of starting to find the no load
output voltage.
(2) The rheostat (resistive load) should be kept at maximum resistance position.
(3) Do not load both upper and lower part simultaneously.
127
Tabular Column
Vnoload = ____V
A U
T-
E A
I- F
E &
B -
L A
EC
EL
O
IDC
% Reg
IDC Vs VDC
128
Model Graph
Theory
Load Regulation
(Vno load - Vload )
% Regualtion = 100
(Vno load )
A U
-
Where Vno load is the output voltag at zero load crrent and V full load is the output
voltage at rated load current. This is usually denoted inTpercentage.
E A
Procedure
I - F
E & diagram shown in Fig. 1
1. The connections are given as per the circuit
E C
4. Close the SPST switch for positive DC output voltage
E L
5. Vary the load rheostat to set the load current
6. Note down the corresponding DC output voltage
7. Repeat the procedure for , , , full load currents and find the
corresponding DC output voltage.
8. Fill it in the tabular column
9. Open SPST1 switch
10. Find the % regulation as per formula given.
11. Draw the graph IDC Versus VDC and IDC Versus % Regulation
12. Close the SPST2 switch for negative DC output voltage.
13. Repeat the procedure from step 5 to step 8.
14. Open SPST2 switch
15. Repeat the procedure from step 10 to step 11.
129
D1
1A (+) (0-1)A
IN4007
SL100 SPST 1 M.C
L Fuse
-
+ A
V
D2
FZ9.1
560
+
+ 330 (0-15)V
1000F 500
V M.C
E
D - 25V 1.2 A
L
P BC147 -
E
S
T 100
C
L
S
W
A
I
B
T 100
-
C
E
BC158 +
&
+1000F
V M.C 1.2 A
I-
- 25V 330
F
-
D1
560 A E FZ9.1
V (0-1)A
M.C
T
- A +
-
N NL C.T SPST 2
A
/ 1A
V 1A
230230V/15-0-15 (-) SK100
U
1, 50mA IN4007
C.T Transformer
Transformer
D2
130
Result
A U
T-
EA
I- F
E &
B -
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Exp No:
Date:
Aim
To design and construct an AC voltage stabilizer with auto cut off at 230 volts and
to verify its operation.
Components Required
Auto transformer, single pole 8 way switch, 230/12 volts transformer.
Diode (1N4001), capacitor (1000f/25volts) resistors (4.7 k, preset 1 k) relay (6
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volts/40 ), transistor (BC 147), Zener diode (FZ 9.1 V), red and green lamps,
Voltmeter (0-300V MI)
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Theory
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Need For Voltage Stabilizer
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Voltage fluctuations are present everywhere and unless some sort of remedial
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measures are taken, serious damage to expensive equipment could result. Most of
the electrical appliances are designed to operate satisfactorily at 230 volts ac
supply. A variation of supply voltage of +/- 10% will not harm most of them. But
variation larger than these can cause problem varying from unsatisfactory performance
to a total failure of the equipment. For example, a refrigerator (compressor) will not
function properly if the supply voltage drops below 190 volts. Similarly a 100 watts
tungsten filament bulb in the home would glow as 60 watts when there is a drop in
supply voltage. Also we can observe that the fan is revolving with lesser speed due
to supply voltage drop. Hence a voltage stabilizer can be used to counteract the
problem of voltage fluctuations. A manual voltage stabilizer with higher voltage cut
off (240 volts) can be constructed as explained in this experiment.
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Tabulation
Cut Off Voltage = 230 Volts
Measured I/P Status of green Status of red Measured O/P
Sl.No.
voltage lamp lamp voltage
1. 150
2. 160
3. 170
4. 180
5. 190
6. 200
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7. 210
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8. 220
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9. 230
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10. 240
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Position Up Position Down
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Working of Auto Cut-Off Circuit
In this circuit 230 volts ac supply is stepped down to 12 volts ac by 230/12 volts
transformer and rectified by a diode bridge rectifier and then filtered by a capacitor.
Under normal operation the dc voltage available is 12 volts. The Zener diode which is
used as a comparator has a breakdown voltage of 9.1 volts and the transistor has a
voltage drop of 0.7 volts at VB E.
The voltage at point A should to be minimum 9.8 volts to make the transistor
on. During normal operation, transistor is less forward biased and hence acts as an open
circuit. Hence the base current of the transistor is Zero (IB = 0) and the current which will
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energize the relay coil is not enough since transistor is off. Therefore the relay is in
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normal closed position and hence the green lamp glows indicating the normal operation.
Now the voltmeter connected at the output reads the outputTvoltage. But when the supply
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voltage increases, the dc voltage at point A exceeds
F 9.8 volts making the Zener to
breakdown and drives the base of the transistorI which causes collector current to flow
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making V = 0 and I = I(sat) . This collector
CE C - current energizes the relay coil and hence,
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relay switches its state from normallyA closed to normally open. Hence, green lamp
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doesn't get ac supply where as red lamp gets ac supply and glows there by indicating the
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auto cutoff operation. Under
indicates 0 volts. This auto cut off circuit operates only when there are supply voltage
fluctuations.
Procedure
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cut off. Now the voltmeter at the output side reads zero volts.
4. If the input side voltmeter shows input voltage above 230 volts, (since the single
pole 2 way switch is already in ''DOWN" position) then use the single pole 8 way
switch to decrease the input voltage and observe the auto cutoff at 240 volts
indicated by the glow of red lamp and note down the reading of voltmeter at the
input side as 240 volts and the voltmeter at the output reads zero volts.
5. Under normal operation, when the input is 230 volts, the green lamp glows and the
voltmeter reads the output voltage.
Result
Auto cut off circuit for AC voltage stabilizer was constructed for a cut-off voltage
of 230V and its operation was verified.
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Exercise
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1. What is a stabilizer?
2. What are the types of stabilizer?
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3. Is a stabilizer differ from voltage regulator?
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4. What is the function of Zener diode auto cutoff circuit?
5. Why should a diode is connected L
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across the relay coil?
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