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    TC58NVG3S0FTA00

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    varimasr
    This document provides specifications for the TC58NVG3S0F 8 Gbit NAND flash memory chip from Toshiba. It has an 8-bit interface and is organized into 4096 blocks of 256KB + 14.5KB pages. The chip uses an internal register to facilitate high-speed reading and writing in 4328-byte increments and performs erase operations on entire blocks at a time. It is designed for applications requiring high density non-volatile storage such as solid state drives, cameras, and voice recorders.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    TC58NVG3S0FTA00

    Uploaded by

    varimasr
    141 views73 pages
    This document provides specifications for the TC58NVG3S0F 8 Gbit NAND flash memory chip from Toshiba. It has an 8-bit interface and is organized into 4096 blocks of 256KB + 14.5KB pages. The chip uses an internal register to facilitate high-speed reading and writing in 4328-byte increments and performs erase operations on entire blocks at a time. It is designed for applications requiring high density non-volatile storage such as solid state drives, cameras, and voice recorders.

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    NAND Datasheet

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    This document provides specifications for the TC58NVG3S0F 8 Gbit NAND flash memory chip from Toshiba. It has an 8-bit interface and is organized into 4096 blocks of 256KB + 14.5KB pages. The chip uses an internal register to facilitate high-speed reading and writing in 4328-byte increments and performs erase operations on entire blocks at a time. It is designed for applications requiring high density non-volatile storage such as solid state drives, cameras, and voice recorders.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    141 views73 pages

    TC58NVG3S0FTA00

    Uploaded by

    varimasr
    This document provides specifications for the TC58NVG3S0F 8 Gbit NAND flash memory chip from Toshiba. It has an 8-bit interface and is organized into 4096 blocks of 256KB + 14.5KB pages. The chip uses an internal register to facilitate high-speed reading and writing in 4328-byte increments and performs erase operations on entire blocks at a time. It is designed for applications requiring high density non-volatile storage such as solid state drives, cameras, and voice recorders.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    TC58NVG3S0FTA00

    TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

    2
    8 GBIT (1G × 8 BIT) CMOS NAND E PROM
    DESCRIPTION
    The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable
    Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.
    The device has two 4328-byte static registers which allow program and read data to be transferred between the
    register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block
    unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).
    The TC58NVG3S0F is a serial-type memory device which utilizes the I/O pins for both address and data
    input/output as well as for command inputs. The Erase and Program operations are automatically executed making
    the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
    cameras and other systems which require high-density non-volatile memory data storage.

    FEATURES
    • Organization
    x8
    Memory cell array 4328 × 256K × 8
    Register 4328 × 8
    Page size 4328 bytes
    Block size (256K + 14.5K) bytes

    • Modes
    Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
    Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

    • Mode control
    Serial input/output
    Command control

    • Number of valid blocks


    Min 4016 blocks
    Max 4096 blocks

    • Power supply
    VCC = 2.7V to 3.6V

    • Access time
    Cell array to register 30 μs max
    Serial Read Cycle 25 ns min (CL=100pF)

    • Program/Erase time
    Auto Page Program 300 μs/page typ.
    Auto Block Erase 3 ms/block typ.

    • Operating current
    Read (25 ns cycle) 30 mA max.
    Program (avg.) 30 mA max
    Erase (avg.) 30 mA max
    Standby 50 μA max

    • Package
    TSOP I 48-P-1220-0.50C (Weight: 0.53 g typ.)

    • 4bit ECC for each 512Byte is required.

    1 2011-07-01C
    TC58NVG3S0FTA00
    PIN ASSIGNMENT (TOP VIEW)

    TC58NVG3S0FTA00

    ×8 ×8

    NC 1 48 NC
    NC 2 47 NC
    NC 3 46 NC
    NC 4 45 NC
    NC 5 44 I/O8
    NC 6 43 I/O7
    RY / BY 7 42 I/O6
    RE 8 41 I/O5
    CE 9 40 NC
    NC 10 39 PSL
    NC 11 38 NC
    VCC 12 37 VCC
    VSS 13 36 VSS
    NC 14 35 NC
    NC 15 34 NC
    CLE 16 33 NC
    ALE 17 32 I/O4
    WE 18 31 I/O3
    WP 19 30 I/O2
    NC 20 29 I/O1
    NC 21 28 NC
    NC 22 27 NC
    NC 23 26 NC
    NC 24 25 NC

    PINNAMES

    I/O1 to I/O8 I/O port

    CE Chip enable

    WE Write enable

    RE Read enable

    CLE Command latch enable

    ALE Address latch enable

    PSL Power on select

    WP Write protect

    RY/BY Ready/Busy

    VCC Power supply

    VSS Ground

    2 2011-07-01C
    TC58NVG3S0FTA00
    BLOCK DIAGRAM

    VCC VSS
    Status register

    I/O1 Address register Column buffer


    I/O
    to Column decoder
    Control circuit
    I/O8 Command register Data register

    Sense amp
    CE

    Row address decoder


    CLE

    Row address buffer


    ALE

    decoder
    WE Logic control Control circuit Memory cell array
    RE
    WP

    PSL

    RY / BY
    RY / BY HV generator

    ABSOLUTE MAXIMUM RATINGS

    SYMBOL RATING VALUE UNIT

    VCC Power Supply Voltage −0.6 to 4.6 V

    VIN Input Voltage −0.6 to 4.6 V

    VI/O Input /Output Voltage −0.6 to VCC + 0.3 (≤ 4.6 V) V

    PD Power Dissipation 0.3 W

    TSOLDER Soldering Temperature (10 s) 260 °C

    TSTG Storage Temperature −55 to 150 °C

    TOPR Operating Temperature 0 to 70 °C

    CAPACITANCE *(Ta = 25°C, f = 1 MHz)

    SYMB0L PARAMETER CONDITION MIN MAX UNIT

    CIN Input VIN = 0 V ⎯ 10 pF

    COUT Output VOUT = 0 V ⎯ 10 pF

    * This parameter is periodically sampled and is not tested for every device.

    3 2011-07-01C
    TC58NVG3S0FTA00
    VALID BLOCKS
    SYMBOL PARAMETER MIN TYP. MAX UNIT

    NVB Number of Valid Blocks 4016 ⎯ 4096 Blocks

    NOTE: The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
    The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
    The specification for the minimum number of valid blocks is applicable over lifetime
    The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane
    operations.

    RECOMMENDED DC OPERATING CONDITIONS

    SYMBOL PARAMETER MIN TYP. MAX UNIT

    VCC Power Supply Voltage 2.7 ⎯ 3.6 V

    VIH High Level input Voltage 2.7 V ≤ VCC ≤ 3.6 V Vcc x 0.8 ⎯ VCC + 0.3 V

    VIL Low Level Input Voltage 2.7 V ≤ VCC ≤ 3.6 V −0.3* ⎯ Vcc x 0.2 V

    * −2 V (pulse width lower than 20 ns)

    DC CHARACTERISTICS (Ta = 0 to 70℃, VCC = 2.7 to 3.6V)

    SYMBOL PARAMETER CONDITION MIN TYP. MAX UNIT

    IIL Input Leakage Current VIN = 0 V to VCC ⎯ ⎯ ±10 μA

    ILO Output Leakage Current VOUT = 0 V to VCC ⎯ ⎯ ±10 μA

    PSL = GND or NU ⎯ ⎯ 30
    ICCO0 * Power On Reset Current PSL = VCC, FFh command input after mA
    ⎯ ⎯ 30
    Power On

    ICCO1 Serial Read Current CE = VIL, IOUT = 0 mA, tcycle = 25 ns ⎯ ⎯ 30 mA

    ICCO2 Programming Current ⎯ ⎯ ⎯ 30 mA

    ICCO3 Erasing Current ⎯ ⎯ ⎯ 30 mA

    CE = VCC − 0.2 V, WP = 0 V/VCC,


    ICCS Standby Current ⎯ ⎯ 50 μA
    PSL = 0 V/VCC/NU

    VOH High Level Output Voltage IOH = −0.4 mA 2.4 ⎯ ⎯ V

    VOL Low Level Output Voltage IOL = 2.1 mA ⎯ ⎯ 0.4 V

    IOL Output current of RY / BY


    VOL = 0.4 V ⎯ 8 ⎯ mA
    ( RY / BY ) pin

    * Refer to application note (2) for detail

    4 2011-07-01C
    TC58NVG3S0FTA00
    AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
    (Ta = 0 to 70℃, VCC = 2.7 to 3.6V)

    SYMBOL PARAMETER MIN MAX UNIT

    tCLS CLE Setup Time 12 ⎯ ns

    tCLH CLE Hold Time 5 ⎯ ns

    tCS CE Setup Time 20 ⎯ ns

    tCH CE Hold Time 5 ⎯ ns

    tWP Write Pulse Width 12 ⎯ ns

    tALS ALE Setup Time 12 ⎯ ns

    tALH ALE Hold Time 5 ⎯ ns

    tDS Data Setup Time 12 ⎯ ns

    tDH Data Hold Time 5 ⎯ ns

    tWC Write Cycle Time 25 ⎯ ns

    tWH WE High Hold Time 10 ⎯ ns

    tWW WP High to WE Low 100 ⎯ ns

    tRR Ready to RE Falling Edge 20 ⎯ ns

    tRW Ready to WE Falling Edge 20 ⎯ ns

    tRP Read Pulse Width 12 ⎯ ns

    tRC Read Cycle Time 25 ⎯ ns

    tREA RE Access Time ⎯ 20 ns

    tCEA CE Access Time ⎯ 25 ns

    tCLR CLE Low to RE Low 10 ⎯ ns

    tAR ALE Low to RE Low 10 ⎯ ns

    tRHOH RE High to Output Hold Time 25 ⎯ ns

    tRLOH RE Low to Output Hold Time 5 ⎯ ns

    tRHZ RE High to Output High Impedance ⎯ 60 ns

    tCHZ CE High to Output High Impedance ⎯ 20 ns

    tCSD CE High to ALE or CLE Don’t Care 0 ⎯ ns

    tREH RE High Hold Time 10 ⎯ ns

    tIR Output-High-impedance-to- RE Falling Edge 0 ⎯ ns

    tRHW RE High to WE Low 60 ⎯ ns

    tWHC WE High to CE Low 30 ⎯ ns

    tWHR WE High to RE Low 60 ⎯ ns

    tR Memory Cell Array to Starting Address ⎯ 30 μs

    tDCBSYR1 Data Cache Busy in Read Cache (following 31h and 3Fh) ⎯ 30 μs

    tDCBSYR2 Data Cache Busy in Page Copy (following 3Ah) ⎯ 35 μs

    tWB WE High to Busy ⎯ 100 ns

    tRST Device Reset Time (Ready/Read/Program/Erase) ⎯ 10/10/30/500 μs

    *1: tCLS and tALS can not be shorter than tWP


    *2: tCS should be longer than tWP + 8ns.

    5 2011-07-01C
    TC58NVG3S0FTA00
    AC TEST CONDITIONS
    CONDITION
    PARAMETER
    VCC: 2.7 to 3.6V

    Input level 0V to Vcc

    Input pulse rise and fall time 3 ns

    Input comparison level Vcc / 2

    Output data comparison level Vcc / 2

    Output load CL (100 pF) + 1 TTL

    Note: Busy to ready time depends on the pull-up resistor tied to the RY / BY pin.
    (Refer to Application Note (9) toward the end of this document.)

    PROGRAMMING AND ERASING CHARACTERISTICS


    (Ta = 0 to 70℃, VCC = 2.7 to 3.6V)

    SYMBOL PARAMETER MIN TYP. MAX UNIT NOTES

    tPROG Average Programming Time ⎯ 300 700 μs

    tDCBSYW1 Data Cache Busy Time in Write Cache (following 11h) ⎯ 0.5 1 μs

    tDCBSYW2 Data Cache Busy Time in Write Cache (following 15h) ⎯ ⎯ 700 μs (2)

    N Number of Partial Program Cycles in the Same Page ⎯ ⎯ 4 (1)

    tBERASE Block Erasing Time ⎯ 3 10 ms

    (1) Refer to Application Note (12) toward the end of this document.
    (2) tDCBSYW2 depends on the timing between internal programming time and data in time.

    Data Output
    When tREH is long, output buffers are disabled by /RE=High, and the hold time of data output depend on tRHOH
    (25ns MIN). On this condition, waveforms look like normal serial read mode.
    When tREH is short, output buffers are not disabled by /RE=High, and the hold time of data output depend on
    tRLOH (5ns MIN). On this condition, output buffers are disabled by the rising edge of CLE,ALE,/CE or falling
    edge of /WE, and waveforms look like Extended Data Output Mode.

    6 2011-07-01C
    TC58NVG3S0FTA00
    TIMING DIAGRAMS

    Latch Timing Diagram for Command/Address/Data

    CLE
    ALE
    CE
    RE Setup Time Hold Time

    WE

    tDS tDH

    I/O

    : VIH or VIL

    Command Input Cycle Timing Diagram

    CLE
    tCLS tCLH
    tCS tCH

    CE

    tWP

    WE

    tALS tALH

    ALE

    tDS tDH

    I/O

    : VIH or VIL

    7 2011-07-01C
    TC58NVG3S0FTA00

    Address Input Cycle Timing Diagram

    tCLS tCLH

    CLE

    tCH tCS tWC tWC tCH


    tCS

    CE

    tWP tWH tWP tWH tWP tWH tWP tWH tWP

    WE

    tALS tALH

    ALE

    tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH

    I/O CA0 to 7 CA8 to 12 PA0 to 7 PA8 to 15 PA16 to 17

    : VIH or VIL

    Data Input Cycle Timing Diagram

    tCLS tCLH

    CLE

    tCS tCH tCS tCH

    CE

    tALS tALH

    tWC
    ALE

    tWP tWH tWP tWP

    WE

    tDS tDH tDS tDH tDS tDH

    I/O DIN0 DIN1 DIN4327*

    8 2011-07-01C
    TC58NVG3S0FTA00
    Serial Read Cycle Timing Diagram

    tRC

    CE

    tRP tREH tRP tRP tCHZ

    RE
    tRHZ tRHZ tRHZ
    tREA tRHOH tREA tRHOH tREA tRHOH

    tCEA tCEA
    I/O

    tRR

    RY / BY
    : VIH or VIL

    Status Read Cycle Timing Diagram

    tCLR

    CLE
    tCLS tCLH

    tCS

    CE

    tWP tCH tCEA

    WE tCHZ
    tWHC
    tWHR

    RE
    tRHOH
    tDS tDH tIR
    tREA tRHZ
    Status
    I/O 70h*
    output

    RY / BY

    : VIH or VIL
    *: 70h represents the hexadecimal number

    9 2011-07-01C
    TC58NVG3S0FTA00
    Read Cycle Timing Diagram
    tCLR

    CLE
    tCLS tCLH tCLS tCLH
    tCS tCH tCS tCH

    CE

    tWC

    WE
    tALH tALS tALH tALS

    ALE

    tR tRC

    RE tWB

    tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tCEA
    tRR

    CA0 CA8 PA0 PA8 PA16 tREA D DOUT


    I/O 00h 30h OUT
    to 7 to 12 to 7 to 15 to 17 N N+1

    Data out from


    Col. Add. N Col. Add. N
    RY / BY

    Read Cycle Timing Diagram: When Interrupted by CE


    tCLR

    CLE
    tCLS tCLH tCLS tCLH
    tCS tCH tCS tCH

    CE

    tWC tCSD

    WE
    tALH tALS tALH tALS

    ALE

    tR tRC tCHZ

    RE tWB
    tRHZ
    tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tCEA
    tRR tRHOH

    CA0 CA8 PA0 PA8 PA16 tREA D DOUT


    I/O 00h 30h OUT
    to 7 to 12 to 7 to 15 to 17 N N+1

    Col. Add. N Col. Add. N

    RY / BY

    10 2011-07-01C
    TC58NVG3S0FTA00
    Read Cycle with Data Cache Timing Diagram (1/2)

    tCLR tCLR

    CLE
    tCLH tCLH tCLH tCLH
    tCLS tCLS tCLS tCLS
    tCH tCH tCH tCH
    tCS tCS tCS tCS
    CE

    tWC

    WE
    tALH tALS tALH tALS tRW tCEA tCEA

    ALE

    tR tDCBSYR1 tRC tDCBSYR1

    RE tWB tWB tWB

    tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tRR tDS tDH tRR tREA
    tREA

    CA0 CA8 PA0 PA8 PA16 DOUT DOUT DOUT


    I/O 00h 30h 31h DOUT 31h
    to 7 to 12 to 7 to 15 to 17 0 1 0

    Column address Page address Page address


    N* M Page address M M+1
    RY / BY Col. Add. 0 Col. Add. 0

    * The column address will be reset to 0 by the 31h command input. 1

    Continues to 1 of next page

    11 2011-07-01C
    TC58NVG3S0FTA00
    Read Cycle with Data Cache Timing Diagram (2/2)

    tCLR tCLR tCLR


    CLE
    tCLH tCLH tCLH
    tCLS tCLS tCLS
    tCH tCH tCH
    tCS tCS tCS
    CE

    WE
    tCEA tCEA
    tCEA

    ALE
    tDCBSYR1 tRC tDCBSYR1 tRC tDCBSYR1 tRC

    tWB tWB tWB


    RE
    tDS tDH tDS tDH tDS tDH
    tRR tREA tRR tREA tRR tREA

    DOUT DOUT DOUT DOUT DOUT DOUT


    I/O DOUT 31h DOUT 31h DOUT 3Fh DOUT
    0 1 0 1 0 1
    Page address Page address M + x
    Page address M + 1 M+2

    RY / BY
    Col. Add. 0
    Col. Add. 0 Col. Add. 0

    1 Make sure to terminate the operation with 3Fh command.

    Continues from 1 of last page

    12 2011-07-01C
    TC58NVG3S0FTA00
    Column Address Change in Read Cycle Timing Diagram (1/2)

    tCLR

    CLE
    tCLS tCLH tCLS tCLH

    tCS tCH tCS tCH


    CE
    tWC
    tCEA
    WE

    tALH tALS tALH tALS

    ALE

    tR tRC

    RE tWB

    tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tRR tREA

    CA0 CA8 PA0 PA8 PA16 DOUT DOUT DOUT


    I/O 00h 30h
    to 7 to 12 to 7 to 15 to 17 A A+1 A+N

    Page address Page address


    P P

    RY / BY

    Column address
    A

    Continues from 1 of next page

    13 2011-07-01C
    TC58NVG3S0FTA00
    Column Address Change in Read Cycle Timing Diagram (2/2)

    tCLR

    CLE
    tCLS tCLH tCLS tCLH

    tCS tCH tCS tCH

    CE

    tRHW tWC tCEA

    WE
    tALH tALS tALH tALS

    ALE

    tWHR tRC

    RE
    tDS tDH tDS tDH tDS tDH tDS tDH tREA
    tIR
    DOUT CA0 CA8 DOUT DOUT DOUT
    I/O 05h E0h
    A+N to 7 to 12 B B+1 B + N’
    Column address Page address
    B P

    RY / BY

    Column address
    B

    Continues from 1 of last page

    14 2011-07-01C
    TC58NVG3S0FTA00

    Data Output Timing Diagram

    CLE
    tCLS tCLH

    tCS tCH

    CE

    WE
    tALH

    ALE

    tRC tCHZ
    tRP tREH tRP tRP tRHZ

    RE
    tREA tREA
    tCEA tDS tDH
    tREA tRLOH tRLOH

    I/O Dout Dout Command

    tRR
    tRHOH tRHOH

    RY / BY

    15 2011-07-01C
    TC58NVG3S0FTA00
    Auto-Program Operation Timing Diagram

    tCLS
    CLE
    tCLS tCLH

    tCS tCS

    CE

    tCH

    WE
    tALH tALH
    tALS tPROG
    tALS
    tWB

    ALE

    RE tDS
    tDS
    tDS tDH tDS tDH tDH tDH

    CA0 CA8 PA0 PA8 PA16 DIN Status


    I/O 80h DINN DINM 10h 70h
    to 7 to 12 to 7 to 15 to 17 N+1 output
    Column address
    N

    RY / BY

    : Do not input data while data is being output.

    : VIH or VIL

    *) M: up to 4327 (byte input data for ×8 device).

    16 2011-07-01C
    TC58NVG3S0FTA00
    Auto-Program Operation with Data Cache Timing Diagram (1/3)

    tCLS
    CLE
    tCLS tCLH

    tCS tCS
    CE

    tCH

    WE
    tALH tALH
    tALS tDCBSYW2
    tALS tWB
    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    CA0 CA8 PA0 PA8 PA16 DIN CA0


    I/O 80h DINN 15h 80h
    to 7 to 12 to 7 to 15 to 17 N+1 to 7

    DIN4327

    RY / BY
    : Do not input data while data is being output.

    : VIH or VIL

    CA0 to CA12 is 0 in this diagram. 1

    Continues to 1 of next page

    17 2011-07-01C
    TC58NVG3S0FTA00
    Auto-Program Operation with Data Cache Timing Diagram (2/3)

    tCLS

    CLE
    tCLS tCLH

    tCS tCS
    CE

    tCH

    WE
    tALH tALH
    tALS tALS tDCBSYW2
    tWB
    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    I/O CA0 CA8 PA0 PA8 PA16 DIN CA0


    80h DINN 15h 80h
    to 7 to 12 to 7 to 15 to 17 N+1 to 7

    DIN4327

    RY / BY

    Repeat a max of 62 times (in order to program pages 1 to 62 of a block).


    1 2

    Continued from 1 of last page

    : Do not input data while data is being output.

    : VIH or VIL

    18 2011-07-01C
    TC58NVG3S0FTA00
    Auto-Program Operation with Data Cache Timing Diagram (3/3)

    tCLS

    CLE
    tCLS tCLH

    tCS tCS

    CE

    tCH

    WE
    tALH tALH
    tALS tALS tPROG (*1)
    tWB

    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    CA0 CA8 PA0 PA8 PA16 DIN


    I/O 80h DINN 10h 70h Status
    to 7 to 12 to 7 to 15 to 17 N+1

    DIN4327

    RY / BY
    : Do not input data while data is being output.

    : VIH or VIL

    2
    (*1) tPROG: Since the last page programming by 10h command is initiated after the previous cache
    Continued from 2 of last page program, the tPROG during cache programming is given by the following equation.

    tPROG = tPROG of the last page + tPROG of the previous page − A


    A = (command input cycle + address input cycle + data input cycle time of the last page)

    If “A” exceeds the tPROG of previous page, tPROG of the last page is tPROG max.

    (Note) Make sure to terminate the operation with 80h-10h- command sequence.
    If the operation is terminated by 80h-15h command sequence, monitor I/O 6 (Ready / Busy) by
    issuing Status Read command (70h) and make sure the previous page program operation is
    completed. If the page program operation is completed issue FFh reset before next operation.

    19 2011-07-01C
    TC58NVG3S0FTA00
    Multi-Page Program Operation with Data Cache Timing Diagram (1/4)

    tCLS
    CLE
    tCLS tCLH

    tCS tCS
    CE

    tCH

    WE
    tALH tALH
    tALS tALS tDCBSYW1
    tWB
    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    CA0 CA8 PA0 PA8 PA16 DIN CA0


    I/O 80h DINN 11h 81h
    to 7 to 12 to 7 to 15 to 17 N+1 to 7
    Page Address M
    District-0 DIN4327

    RY / BY
    : Do not input data while data is being output.

    : VIH or VIL

    Continues to 1 of next page

    20 2011-07-01C
    TC58NVG3S0FTA00
    Multi-Page Program Operation with Data Cache Timing Diagram (2/4)

    tCLS
    CLE
    tCLS tCLH

    tCS tCS
    CE

    tCH

    WE
    tALH tALH
    tALS tDCBSYW2
    tALS tWB
    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    I/O CA0 CA8 PA0 PA8 PA16 DIN CA0


    81h DINN 15h 80h
    to 7 to 12 to 7 to 15 to 17 N+1 to 7
    Page Address M
    District-1 DIN4327

    RY / BY

    Repeat a max of 63 times (in order to program pages 0 to 62 of a block).


    1 2

    Continued from 1 of last page

    : Do not input data while data is being output.

    : VIH or VIL

    21 2011-07-01C
    TC58NVG3S0FTA00
    Multi-Page Program Operation with Data Cache Timing Diagram (3/4)

    tCLS

    CLE
    tCLS tCLH

    tCS tCS
    CE

    tCH

    WE
    tALH tALH
    tALS tALS tDCBSYW1
    tWB
    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    CA0 CA8 PA0 PA8 PA16 DIN CA0


    I/O 80h DINN 11h 81h
    to 7 to 12 to 7 to 15 to 17 N+1 to 7
    Page Address M+n
    District-0 DIN4327

    RY / BY
    : Do not input data while data is being output.

    : VIH or VIL

    2 3

    Continues to 3 of next page

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    TC58NVG3S0FTA00
    Multi-Page Program Operation with Data Cache Timing Diagram (4/4)

    tCLS

    CLE
    tCLS tCLH

    tCS tCS

    CE

    tCH

    WE
    tALH tALH
    tALS tALS tPROG (*1)
    tWB

    ALE

    RE
    tDS tDS
    tDS tDH tDS tDH tDH tDH

    CA0 CA8 PA0 PA8 PA16 DIN


    I/O 81h DINN 10h 71h Status
    to 7 to 12 to 7 to 15 to 17 N+1
    Page Address M+n
    District-1 DIN4327

    RY / BY
    : Do not input data while data is being output.

    : VIH or VIL

    Continued from 3 of last page

    (*1) tPROG: Since the last page programming by 10h command is initiated after the previous cache
    program, the tPROG during cache programming is given by the following equation.

    tPROG = tPROG of the last page + tPROG of the previous page − A


    A = (command input cycle + address input cycle + data input cycle time of the last page)

    If “A” exceeds the tPROG of previous page, tPROG of the last page is tPROG max.

    (Note) Make sure to terminate the operation with 80h-10h- command sequence.
    If the operation is terminated by 81h-15h command sequence, monitor I/O 6 (Ready / Busy) by issuing Status
    Read command (70h) and make sure the previous page program operation is completed. If the page program
    operation is completed issue FFh reset before next operation.

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    TC58NVG3S0FTA00
    Auto Block Erase Timing Diagram

    CLE
    tCLS
    tCLH
    tCS
    tCLS
    CE

    WE
    tALH
    tALS tWB tBERASE

    ALE

    RE

    tDS tDH

    PA0 PA8 PA16 Status


    I/O 60h D0h 70h
    to 7 to 15 to 17 output

    Busy
    RY / BY Auto Block Erase Start Status Read
    Erase Setup command command
    command

    : VIH or VIL : Do not input data while data is being output.

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    TC58NVG3S0FTA00
    Multi Block Erase Timing Diagram

    CLE
    tCLS
    tCLH
    tCS
    tCLS
    CE

    WE

    tALS tALH tWB tBERASE

    ALE

    RE

    tDS tDH

    I/O1 PA0 PA8 PA16


    60h D0h 71h
    to to 7 to 15 to 17
    Status
    output

    RY/BY Auto Block Busy Status Read


    Erase Setup command
    command

    Repeat 2 times (District-0,1)

    : VIH or VIL

    : Do not input data while data is being output.

    25 2011-07-01C
    Copy Back Program with Random Data Input

    CLE

    CE
    tWC

    WE
    tWB tPROG

    tWB tWHR
    ALE

    tR

    26
    RE

    Col Col Row Row Row Col Col Row Row Row
    I/Ox 00h 35h 85h Data1 DataN 10h 70h I/O
    Add1 Add2 Add1 Add2 Add3 Add1 Add2 Add1 Add2 Add3

    Column Address Row Address Column Address Row Address Read Status command
    R/B

    Busy Busy
    Copy Back Program Data I/O1=0 Successful Program
    Input Command I/O1=1 Error in Program
    TC58NVG3S0FTA00

    2011-07-01C
    TC58NVG3S0FTA00
    ID Read Operation Timing Diagram

    tCLS

    CLE
    tCLS

    tCS tCS tCH tCEA

    CE

    tCH

    WE
    tALH

    tALH tALS tAR

    ALE

    RE
    tDH

    tDS
    tREA tREA tREA tREA tREA

    See See See


    I/O 90h 00h 98h D3h Table 5 Table 5 Table 5
    ID Read Address Maker code Device code
    command 00
    : VIH or VIL

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    TC58NVG3S0FTA00
    PIN FUNCTIONS
    The device is a serial access memory which utilizes time-sharing input of address information.

    Command Latch Enable: CLE


    The CLE input signal is used to control loading of the operation mode command into the internal command
    register. The command is latched into the command register from the I/O port on the rising edge of the WE
    signal while CLE is High.

    Address Latch Enable: ALE


    The ALE signal is used to control loading address information into the internal address register. Address
    information is latched into the address register from the I/O port on the rising edge of WE while ALE is High.

    Chip Enable: CE
    The device goes into a low-power Standby mode when CE goes High during the device is in Ready state. The
    CE signal is ignored when device is in Busy state ( RY / BY = L), such as during a Program or Erase or Read
    operation, and will not enter Standby mode even if the CE input goes High.

    Write Enable: WE
    The WE signal is used to control the acquisition of data from the I/O port.

    Read Enable: RE
    The RE signal controls serial data output. Data is available tREA after the falling edge of RE .
    The internal column address counter is also incremented (Address = Address + l) on this falling edge.

    I/O Port: I/O1 to 8


    The I/O1 to 8 pins are used as a port for transferring address, command and input/output data to and from
    the device.

    Write Protect: WP
    The WP signal is used to protect the device from accidental programming or erasing. The internal voltage
    regulator is reset when WP is Low. This signal is usually used for protecting the data during the power-on/off
    sequence when input signals are invalid.

    Ready/Busy: RY / BY
    The RY / BY output signal is used to indicate the operating condition of the device. The RY / BY signal is
    in Busy state ( RY / BY = L) during the Program, Erase and Read operations and will return to Ready state
    ( RY / BY = H) after completion of the operation. The output buffer for this signal is an open drain and has to be
    pulled-up to Vccq with an appropriate resister.

    Power on Select: PSL


    The PSL signal is used to select whether the device initialization should take place during the device power
    on or during the first Reset. Please refer to the application note (2) for details.

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    Schematic Cell Layout and Address Assignment
    The Program operation works on page units while the Erase operation works on block units.

    I/O1

    Data Cache 4096 232 I/O8


    A page consists of 4328 bytes in which 4096 bytes are
    used for main memory storage and 232 bytes are for
    redundancy or for other uses.
    Page Buffer 4096 232 1 page = 4328bytes
    1 block = 4328 bytes × 64 pages = (256K + 14.5K) bytes
    Capacity = 4328 bytes × 64pages × 4096 blocks

    64 Pages=1 block
    262144
    pages
    4096 blocks
    An address is read in via the I/O port over five
    consecutive clock cycles, as shown in Table 1.
    8I/O

    4328

    Table 1. Addressing

    I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1


    CA0 to CA12: Column address
    PA0 to PA17: Page address
    First cycle CA7 CA6 CA5 CA4 CA3 CA2 CA1 CA0

    Second cycle L L L CA12 CA11 CA10 CA9 CA8 PA6 to PA17: Block address
    PA0 to PA5: NAND address in block
    Third cycle PA7 PA6 PA5 PA4 PA3 PA2 PA1 PA0

    Fourth cycle PA15 PA14 PA13 PA12 PA11 PA10 PA9 PA8

    Fifth cycle L L L L L L PA17 PA16

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    TC58NVG3S0FTA00
    Operation Mode: Logic and Command Tables
    The operation modes such as Program, Erase, Read and Reset are controlled by command operations shown
    in Table 3. Address input, command input and data input/output are controlled by the CLE, ALE, CE , WE ,
    RE , WP and PSL signals, as shown in Table 2.

    Table 2. Logic Table


    *1 *3
    CLE ALE CE WE RE WP PSL

    Command Input H L L H * 0V/VCC/NU

    Data Input L L L H H 0V/VCC/NU

    Address input L H L H * 0V/VCC/NU

    Serial Data Output L L L H * 0V/VCC/NU

    During Program (Busy) * * * * * H 0V/VCC/NU

    During Erase (Busy) * * * * * H 0V/VCC/NU

    * * H * * * 0V/VCC/NU
    During Read (Busy)
    * * L H (*2) H (*2) * 0V/VCC/NU

    Program, Erase Inhibit * * * * * L 0V/VCC/NU

    Standby * * H * * 0 V/VCC 0V/VCC/NU

    H: VIH, L: VIL, *: VIH or VIL


    *1: Refer to Application Note (10) toward the end of this document regarding the WP signal when Program or Erase Inhibit
    *2: If CE is low during read busy, WE and RE must be held High to avoid unintended command/address input to the device or
    read to device. Reset or Status Read command can be input during Read Busy.
    *3: PSL must be tied to either 0V or VCC or left unconnected(NU).

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    TC58NVG3S0FTA00

    Table 3. Command table (HEX)

    First Set Second Set Acceptable while Busy

    Serial Data Input 80 ⎯

    Read 00 30

    Column Address Change in Serial Data Output 05 E0

    Read with Data Cache 31 ⎯

    Read Start for Last Page in Read Cycle with Data Cache 3F ⎯

    Auto Page Program 80 10

    Column Address Change in Serial Data Input 85 ⎯

    Auto Program with Data Cache 80 15

    80 11

    Multi Page Program 81 15

    81 10

    Read for Page Copy (2) with Data Out 00 3A

    Read for Copy-Back without Data Out 00 35

    Copy-Back Program without Data Out 85 10

    Auto Program with Data Cache during Page Copy (2) 8C 15

    Auto Program for last page during Page Copy (2) 8C 10

    Auto Block Erase 60 D0

    Page Program with 2KB Data 80 – 11 80 - 10

    Copy-Back Program with 2KB Data 85 - 11 85 - 10

    ID Read 90 ⎯

    Status Read 70 ⎯ {

    Status Read2 F1 ⎯ {

    Status Read for Multi-Page Program or Multi Block Erase 71 ⎯ {

    Reset FF ⎯ {

    HEX data bit assignment


    (Example) Serial Data Input: 80h

    1 0 0 0 0 0 0 0
    8 7 6 5 4 3 2 I/O1

    Table 4. Read mode operation states

    CLE ALE CE WE RE I/O1 to I/O8 Power

    Output select L L L H L Data output Active

    Output Deselect L L L H H High impedance Active

    H: VIH, L: VIL

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    DEVICE OPERATION
    Read Mode
    Read mode is set when the "00h" and “30h” commands are issued to the Command register. Between the two
    commands, a start address for the Read mode needs to be issued. After initial power on sequence, “00h”
    command is latched into the internal command register. Therefore read operation after power on sequence is
    excuted by the setting of only five address cycles and “30h” command. Refer to the figures below for the
    sequence and the block diagram (Refer to the detailed timing chart.).
    CLE

    CE

    WE

    ALE

    RE

    RY / BY Column Address M Page Address N Busy tR

    I/O 00h 30h M M+1 M+2

    Page Address N
    Start-address input
    A data transfer operation from the cell array to the Data
    M m
    Data Cache Cache via Page Buffer starts on the rising edge of WE in the
    30h command input cycle (after the address information has
    Page Buffer been latched). The device will be in the Busy state during this
    Select page transfer period.
    N After the transfer period, the device returns to Ready state.
    Cell array
    Serial data can be output synchronously with the RE clock
    from the start address designated in the address input cycle.
    I/O1 to 8: m = 4327

    Random Column Address Change in Read Cycle

    CLE

    CE

    WE

    ALE

    RE

    RY / BY
    Busy
    tR
    Col. M
    00h 30h M M+1 M+2 M+3 05h E0h M’ M’+1 M’+2 M’+3 M’+4
    I/O

    Col. M Page N Col. M’


    Page N Page N
    Start-address input Start from Col. M Start from Col. M’

    M M’ During the serial data output from the Data Cache, the column
    address can be changed by inputting a new column address
    using the 05h and E0h commands. The data is read out in serial
    starting at the new column address. Random Column Address
    Change operation can be done multiple times within the same
    Select page page.
    N

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    TC58NVG3S0FTA00
    Read Operation with Read Cache
    The device has a Read operation with Data Cache that enables the high speed read operation shown below. When the block address changes, this sequence has to be
    started from the beginning.

    CLE

    CE

    WE

    ALE

    RE

    RY / BY
    tR tDCBSYR1 tDCBSYR1 tDCBSYR1
    3 5 7
    1 2 4 6
    I/O 00h 30h 31h 0 1 2 3 4327 31h 0 1 2 3 4327 3Fh 0 1 2 3 4327

    Col. M Page N Column 0 Page Address N Page Address N + 1 Page Address N + 2


    Data Cache Page N Page N + 1 Page N + 2
    Page Buffer 1 2 Page N Page N + 1 Page N + 2
    3 5 7
    4 6
    Page N
    Cell Array 1 Page N + 1
    3 Page N + 2
    5
    30h 31h & RE clock 31h & RE clock 3Fh & RE clock
    If the 31h command is issued to the device, the data content of the next page is transferred to the Page Buffer during serial data out from the Data Cache, and therefore the tR (Data transfer from memory
    cell to data register) will be reduced.
    1 Normal read. Data is transferred from Page N to Data Cache through Page Buffer. During this time period, the device outputs Busy state for tR max.
    2 After the Ready/Busy returns to Ready, 31h command is issued and data is transferred to Data Cache from Page Buffer again. This data transfer takes tDCBSYR1 max and the completion of this time
    period can be detected by Ready/Busy signal.
    3 Data of Page N + 1 is transferred to Page Buffer from cell while the data of Page N in Data cache can be read out by /RE clock simultaneously.
    4 The 31h command makes data of Page N + 1 transfer to Data Cache from Page Buffer after the completion of the transfer from cell to Page Buffer. The device outputs Busy state for tDCBSYR1 max..
    This Busy period depends on the combination of the internal data transfer time from cell to Page buffer and the serial data out time.
    5 Data of Page N + 2 is transferred to Page Buffer from cell while the data of Page N + 1 in Data cache can be read out by /RE clock simultaneously
    6 The 3Fh command makes the data of Page N + 2 transfer to the Data Cache from the Page Buffer after the completion of the transfer from cell to Page Buffer. The device outputs Busy state for
    tDCBSYR1 max.. This Busy period depends on the combination of the internal data transfer time from cell to Page buffer and the serial data out time.
    7 Data of Page N + 2 in Data Cache can be read out, but since the 3Fh command does not transfer the data from the memory cell to Page Buffer, the device can accept new command input immediately
    after the completion of serial data out.

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    Multi Page Read Operation
    The device has a Multi Page Read operation and Multi Page Read with Data Cache operation..

    (1) Multi Page Read without Data Cache


    The sequence of command and address input is shown below.
    Same page address (PA0 to PA5) within each district has to be selected.

    Command
    input (3 cycle) (3 cycle)
    60 Address input 60 Address input 30 A
    Page Address Page Address
    PA0 to PA17 PA0 to PA17
    (District 0) (District 1) tR
    RY/BY A

    Command
    input (5 cycle) (2 cycle)
    A 00 Address input 05 Address input E0 Data output B
    Column + Page Address Column Address (District 0)
    CA0 to CA12, PA0 to PA17 CA0 to CA12
    (District 0) (District 0)
    RY/BY A B

    Command
    input (5 cycle)
    B 00 Address input 05 Address input E0 Data output
    Column + Page Address Column Address (District 1)
    CA0 to CA12, PA0 to PA17 CA0 to CA12
    (District 1) (District 1)
    RY/BY B

    District 0 District 1

    Reading

    Selected
    page Selected
    page

    The data transfer operation from the cell array to the Data Cache via Page Buffer starts on the rising
    edge of WE in the 30h command input cycle (after the 2 Districts address information has been
    latched). The device will be in the Busy state during this transfer period.
    After the transfer period, the device returns to Ready state. Serial data can be output synchronously
    with the RE clock from the start address designated in the address input cycle.

    34 2011-07-01C
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    (2) Multi Page Read with Data Cache
    When the block address changes (increments) this sequenced has to be started from the beginning.
    The sequence of command and address input is shown below.
    Same page address (PA0 to PA5) within each district has to be selected.

    Command
    input
    60 Address input 60 Address input 30 A
    Page Address Page Address
    PA0 to PA17 PA0 to PA17
    (Page m0 ; District 0) (Page n0 ; District 1) tR
    RY/BY A

    Command
    input
    A 31 00 Address input 05 Address input E0 Data output B
    Column + Page Address Column Address (District 0)
    CA0 to CA12, PA0 to PA17 CA0 to CA12
    tDCBSYR1 (Page m0 ; District 0) (District 0)
    RY/BY A B

    Command
    input
    B 00 Address input 05 Address input E0 Data output C
    Column + Page Address Column Address (District 1)
    CA0 to CA12, PA0 to PA17 CA0 to CA12
    (Page n0 ; District 1) (District 1)
    RY/BY B C

    Return to A
    Repeat a max of 63 times
    Command
    input
    C 3F 00 Address input 05 Address input E0 Data output D
    Column + Page Address Column Address (District 0)
    CA0 to CA12, PA0 to PA17 CA0 to CA12
    tDCBSYR1 (Page m63 ; District 0) (District 0)
    RY/BY C D

    Command
    input
    D 00 Address input 05 Address input E0 Data output
    Column + Page Address Column Address (District 1)
    CA0 to CA12, PA0 to PA17 CA0 to CA12
    (Page n63 ; District 1) (District 1)
    RY/BY D

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    (3) Notes
    (a) Internal addressing in relation with the Districts
    To use Multi Page Read operation, the internal addressing should be considered in relation with the District.
    • The device consists from 2 Districts.
    • Each District consists from 2048 erase blocks.
    • The allocation rule is follows.
    District 0: Block 0, Block 2, Block 4, Block 6,···, Block 4094
    District 1: Block 1, Block 3, Block 5, Block 7,···, Block 4095

    (b) Address input restriction for the Multi Page Read operation
    There are following restrictions in using Multi Page Read;

    (Restriction)
    Maximum one block should be selected from each District.
    Same page address (PA0 to PA5) within two districts has to be selected.
    For example;
    (60) [District 0, Page Address 0x00000] (60) [District 1, Page Address 0x00040] (30)
    (60) [District 0, Page Address 0x00001] (60) [District 1, Page Address 0x00041] (30)

    (Acceptance)
    There is no order limitation of the District for the address input.
    For example, following operation is accepted;
    (60) [District 0] (60) [District 1] (30)
    (60) [District 1] (60) [District 0] (30)

    It requires no mutual address relation between the selected blocks from each District.

    (c) WP signal
    Make sure WP is held to High level when Multi Page Read operation is performed

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    Auto Page Program Operation

    The device carries out an Automatic Page Program operation when it receives a "10h" Program command
    after the address and data have been input. The sequence of command, address and data input is shown below.
    (Refer to the detailed timing chart.)

    CLE

    CE

    WE

    ALE

    RE

    RY/BY

    Status
    I/O 80h Din Din Din Din 10h 70h Out

    Col. M Page P Data

    Data input
    The data is transferred (programmed) from the Data Cache via
    the Page Buffer to the selected page on the rising edge of WE
    Program Read& verification following input of the “10h” command. After programming, the
    programmed data is transferred back to the Page Buffer to be
    Selected
    automatically verified by the device. If the programming does not
    page
    succeed, the Program/Verify operation is repeated by the device
    until success is achieved or until the maximum loop number set in
    the device is reached.

    Random Column Address Change in Auto Page Program Operation


    The column address can be changed by the 85h command during the data input sequence of the Auto Page Program
    operation.
    Two address input cycles after the 85h command are recognized as a new column address for the data input. After
    the new data is input to the new column address, the 10h command initiates the actual data program into the
    selected page automatically. The Random Column Address Change operation can be repeated multiple times within
    the same page.

    80h Din Din Din Din 85h Din Din Din Din 10h 70h Status

    Col. M Page N Col. M’ Busy


    Col. M Col. M’

    Data input

    Program Reading & verification


    Selected
    page

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    Multi Page Program
    The device has a Multi Page Program, which enables even higher speed program operation compared to Auto
    Page Program. The sequence of command, address and data input is shown bellow. (Refer to the detailed timing
    chart.)

    Although two planes are programmed simultaneously, pass/fail is not available for each page when the program
    operation completes. Status bit of I/O 1 is set to “1” when any of the pages fails. Limitation in addressing with
    Multi Page Program is shown below.

    Multi Page Program

    tDCBSYW1 tPROG
    R/ B

    ”0”
    I/O0~7 80h Address & Data Input 11h 81h Address & Data Input 10h 70h I/O1 Pass
    Note
    CA0~CA12 : Valid CA0~CA12 : Valid ”1”
    PA0~PA5 : Valid’ PA0~PA5 : Valid
    PA6 : District0’ PA6 : District1 Fail
    PA7~PA17 : Valid’ PA7~PA17 : Valid

    NOTE: Any command between 11h and 81h is prohibited except 70h/F1h and FFh.

    80h 11h 81h 10h


    Data
    Input
    Plane 0 Plane 1
    (2048 Block) (2048 Block)

    Block 0 Block 1
    Block 2 Block 3

    Block 4092 Block 4093


    Block 4094 Block 4095

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    Auto Page Program Operation with Data Cache
    The device has an Auto Page Program with Data Cache operation enabling the high speed program operation shown below. When the block address changes this
    sequenced has to be started from the beginning.

    CLE

    CE

    WE

    ALE

    RE
    RY / BY
    tDCBSYW2 tDCBSYW2 tPROG (NOTE)

    I/O 80h Add Add Add Add Add Din Din Din 15h 70h 80h Add Add Add Add Add Din Din Din 15h 70h 80h Add Add Add Add Add Din Din Din 10h 70h

    Page N 1 2 Status Output Page N + 1 3 4 Status Output Page N + P 5 6 Status Output

    Data for Page N 2 3 Data for Page N + 1 5 Data for Page N + P


    Data Cache
    4
    Page Buffer 1 Data for Page N Data for Page N + 1
    3

    Cell Array Page N 5 6


    Page N + 1
    Page N + P − 1 Page N + P
    Issuing the 15h command to the device after serial data input initiates the program operation with Data Cache
    1 Data for Page N is input to Data Cache.
    2 Data is transferred to the Page Buffer by the 15h command. During the transfer the Ready/Busy outputs Busy State (tDCBSYW2).
    3 Data is programmed to the selected page while the data for page N + 1 is input to the Data Cache.
    4 By the 15h command, the data in the Data Cache is transferred to the Page Buffer after the programming of page N is completed. The device output busy state from the 15h command
    until the Data Cache becomes empty. The duration of this period depends on timing between the internal programming of page N and serial data input for Page N + 1 (tDCBSYW2).
    5 Data for Page N + P is input to the Data Cache while the data of the Page N + P − 1 is being programmed.
    6 The programming with Data Cache is terminated by the 10h command. When the device becomes Ready, it shows that the internal programming of the Page N + P is completed.
    NOTE: Since the last page programming by the 10h command is initiated after the previous cache program, the tPROG during cache programming is given by the following;
    tPROG = tPROG for the last page + tPROG of the previous page − ( command input cycle + address input cycle + data input cycle time of the previous page)

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    Pass/fail status for each page programmed by the Auto Page Programming with Data Cache operation can be detected by the Status Read operation.
    z I/O1 : Pass/fail of the current page program operation.
    z I/O2 : Pass/fail of the previous page program operation.
    The Pass/Fail status on I/O1 and I/O2 are valid under the following conditions.
    z Status on I/O1: Page Buffer Ready/Busy is Ready State.
    The Page Buffer Ready/Busy is output on I/O6 by Status Read operation or RY / BY pin after the 10h command
    z Status on I/O2: Data Cache Read/Busy is Ready State.
    The Data Cache Ready/Busy is output on I/O7 by Status Read operation or RY / BY pin after the 15h command.

    Example)
    I/O2 => Invalid Page 1 Page 1 Page N − 2 invalid Page N − 1
    I/O1 => Invalid Invalid Page 2 Invalid invalid Page N

    Status Status Status 80h…15h Status Status Status


    80h…15h 70h Out 80h…15h 70h Out 70h Out 70h Out 80h…10h 70h Out 70h Out

    Page 1 Page 2 Page N − 1 Page N

    RY/BY pin

    Data Cache Busy

    Page 1
    Page Buffer Busy
    Page 2
    Page N − 1
    Page N

    If the Page Buffer Busy returns to Ready before the next 80h command input, and if Status Read is done during
    this Ready period, the Status Read provides pass/fail for Page 2 on I/O1 and pass/fail result for Page1 on I/O2

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    Multi Page Program with Data Cache
    The device has a Multi Page Program with Data Cache operation, which enables even higher speed program
    operation compared to Auto Page Program with Data Cache as shown below. When the block address changes
    (increments) this sequenced has to be started from the beginning.

    The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)

    Data input Data input


    command command
    Dummy Program with Dummy Auto Page
    Data input for multi-page Data input for multi-page
    Program Data Cache Program Program
    program program
    command command command command command command
    80 11 81 15 80 11 81 10

    Address Data input Address Data input Address Data input Address Data input
    input 0 to 4327 input 0 to 4327 input 0 to 4327 input 0 to 4327
    (District 0) (District 1) (District 0) (District1)

    RY/BY

    After “15h” or “10h” Program command is input to device, physical programing starts as follows. For details
    of Auto Program with Data Cache, refer to “Auto Page Program with Data Cache”.

    District 0 District 1

    Program Reading & verification

    Selected
    page

    The data is transferred (programmed) from the page buffer to the selected page on the rising edge of
    /WE following input of the “15h” or “10h” command. After programming, the programmed data is
    transferred back to the register to be automatically verified by the device. If the programming does not
    succeed, the Program/Verify operation is repeated by the device until success is achieved or until the
    maximum loop number set in the device is reached.

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    Starting the above operation from 1st page of the selected erase blocks, and then repeating the operation
    total 64 times with incrementing the page address in the blocks, and then input the last page data of the
    blocks, “10h” command executes final programming. Make sure to terminate with 81h-10h- command
    sequence.
    In this full sequence, the command sequence is following.

    1st 80 11 81 15

    80 11 81 15

    63th 80 11 81 15

    64th 80 11 81 10

    After the “15h” or “10h” command, the results of the above operation is shown through the “71h”Status Read
    command.

    Pass
    10 or15 71 I/O

    Status Read Fail


    command

    RY/BY

    The 71h command Status description is as below.

    STATUS OUTPUT

    I/O1 Chip Status1 : Pass/Fail Pass: 0 Fail: 1


    I/O1 describes Pass/Fail condition of
    I/O2 District 0 Chip Status1 : Pass/Fail Pass: 0 Fail: 1 district 0 and 1(OR data of I/O2 and I/O3).
    If one of the districts fails during multi
    I/O3 District 1 Chip Status1 : Pass/Fail Pass: 0 Fail: 1 page program operation, it shows “Fail”.
    I/O4 District 0 Chip Status2 : Pass/Fail Pass: 0 Fail: 1
    I/O2 to 5 shows the Pass/Fail condition of
    I/O5 District 1 Chip Status2 : Pass/Fail Pass: 0 Fail: 1 each district. For details on “Chip Status1”
    and “Chip Status2”, refer to section
    I/O6 Ready/Busy Ready: 1 Busy: 0
    “Status Read”.
    I/O7 Data Cache Ready/Busy Ready: 1 Busy: 0

    I/O8 Write Protect Protect: 0 Not Protect: 1

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    Internal addressing in relation with the Districts
    To use Multi Page Program operation, the internal addressing should be considered in relation with the
    District.
    • The device consists from 2 Districts.
    • Each District consists from 2048 erase blocks.
    • The allocation rule is follows.
    District 0: Block 0, Block 2, Block 4, Block 6,···, Block 4094
    District 1: Block 1, Block 3, Block 5, Block 7,···, Block 4095

    Address input restriction for the Multi Page Program with Data Cache operation
    There are following restrictions in using Multi Page Program with Data Cache;

    (Restriction)
    Maximum one block should be selected from each District.
    Same page address (PA0 to PA5) within two districts has to be selected.
    For example;
    (80) [District 0, Page Address 0x00000] (11) (81) [District 1, Page Address 0x00040] (15 or 10)
    (80) [District 0, Page Address 0x00001] (11) (81) [District 1, Page Address 0x00041] (15 or 10)

    (Acceptance)
    There is no order limitation of the District for the address input.
    For example, following operation is accepted;
    (80) [District 0] (11) (81) [District 1] (15 or 10)
    (80) [District 1] (11) (81) [District 0] (15 or 10)

    It requires no mutual address relation between the selected blocks from each District.

    Operating restriction during the Multi Page Program with Data Cache operation
    (Restriction)
    The operation has to be terminated with “10h” command.
    Once the operation is started, no commands other than the commands shown in the timing diagram is allowed
    to be input except for Status Read command and reset command.

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    Page Copy (2)
    By using Page Copy (2), data in a page can be copied to another page after the data has been read out.
    When the block address changes (increments) this sequenced has to be started from the beginning.

    Command 2 3
    input
    00 Address input 30 Data output 8C Address input Data input 15 00 Address input 3A Data output A
    Address Col = 0 start Address When changing data,
    Address Col = 0 start
    CA0 to CA12, PA0 to PA17 CA0 to CA12, PA0 to PA17 changed data is input. CA0 to CA12, PA0 to PA17
    (Page N) (Page M) (Page N+P1)
    1 4 5

    A
    RY/BY tR tDCBSYW2 tDCBSYR2

    1 Data for Page N 2 Data for Page N 3 Data for Page M 4 5 Data for Page N + P1
    Data Cache
    Page Buffer

    Cell Array
    Page M

    Page N Page N + P1

    Page Copy (2) operation is as following.


    1 Data for Page N is transferred to the Data Cache.
    2 Data for Page N is read out.
    3 Copy Page address M is input and if the data needs to be changed, changed data is input.
    4 Data Cache for Page M is transferred to the Page Buffer.
    5 After the Ready state, Data for Page N + P1 is output from the Data Cache while the data of Page M is being programmed.

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    Command 6
    input
    A 8C Address input Data input 15 00 Address input 3A Data output 00 Address input 3A Data output B
    Address When changing data,
    Address Col = 0 start Address Col = 0 start
    CA0 to CA12, PA0 to PA17 changed data is input. CA0 to CA12, PA0 to PA17 CA0 to CA12, PA0 to PA17
    (Page M+R1) (Page N+P2) (Page N+Pn)
    7 8 9

    RY / BY A B
    tDCBSYW2 tDCBSYR2 tDCBSYR2

    6 7 8 9
    Data for Page M + R1 Data for Page M + R1 Data for Page N + P2 Data for Page N + Pn
    Data Cache
    Page Buffer

    Page M + Rn − 1 Page M + Rn − 1
    Cell Array Page M + R1
    Page M
    Page N + Pn
    Page N + P2
    Page N + P1

    6 Copy Page address (M + R1) is input and if the data needs to be changed, changed data is input.
    7 After programming of page M is completed, Data Cache for Page M + R1 is transferred to the Page Buffer.
    8 By the 15h command, the data in the Page Buffer is programmed to Page M + R1. Data for Page N + P2 is transferred to the Data cache.
    9 The data in the Page Buffer is programmed to Page M + Rn − 1. Data for Page N + Pn is transferred to the Data Cache.

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    Command 10
    input
    B 8C Address input Data input 10 70 Status output
    Address
    CA0 to CA12, PA0 to PA17
    (Page M+Rn)
    11
    RY / BY B
    tPROG (*1)

    Data for Page M + Rn Data for Page M + Rn


    10 11
    Data Cache
    Page Buffer
    Page N + Pn
    Page M + Rn − 1
    Cell Array

    10 Copy Page address (M + Rn) is input and if the data needs to be changed, changed data is input.
    11 By issuing the 10h command, the data in the Page Buffer is programmed to Page M + Rn.

    (*1) Since the last page programming by the 10h command is initiated after the previous cache program, the tPROG here will be expected as the following,
    tPROG = tPROG of the last page + tPROG of the previous page − ( command input cycle + address input cycle + data output/input cycle time of the last page)

    NOTE) This operation needs to be executed within District-0 or District-1.

    Data input is required only if previous data output needs to be altered.


    If the data has to be changed, locate the desired address with the column and page address input after the 8Ch command, and change only the data that needs be changed.
    If the data does not have to be changed, data input cycles are not required.

    Make sure WP is held to High level when Page Copy (2) operation is performed.
    Also make sure the Page Copy operation is terminated with 8Ch-10h command sequence

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    Multi Page Copy (2)
    By using Multi Page Copy (2), data in two pages can be copied to another pages after the data has been read out.
    When the each block address changes (increments) this sequenced has to be started from the beginning.
    Same page address (PA0 to PA5) within two districts has to be selected.

    Command
    input
    60 Address input 60 Address input 30 00 Address input 05 Address input E0 Data output A
    Address Address Address Address
    PA0 to PA17 PA0 to PA17 CA0 to CA12, PA0 to PA17 CA0 to CA12
    (Page m0 ; District 0) (Page n0 ; District 1) (Page m0) (Col = 0)

    A
    RY/BY tR

    A 00 Address input 05 Address input E0 Data output 8C Address input Data input 11 B
    Address Address Address
    CA0 to CA12, PA0 to PA17 CA0 to CA12 CA0 to CA12, PA0 to PA17
    (Page n0) (Col = 0) (Page M0 ; District 0)
    A B
    RY/BY tDCBSYW1

    B 8C Address input Data input 15 60 Address input 60 Address input 3A C


    Address Address Address
    CA0 to CA12, PA0 to PA17 PA0 to PA17 PA0 to PA17
    (Page N0 ; District 1) (Page m1 ; District 0) (Page n1 ; District 1)
    B C
    RY/BY tDCBSYW2 tDCBSYR2

    C 00 Address input 05 Address input E0 Data output 00 Address input 05 Address input E0 Data output D
    Address Address Address Address
    CA0 to CA12, PA0 to PA17 CA0 to CA12 CA0 to CA12, PA0 to PA17 CA0 to CA12
    (Page m1) (Col = 0) (Page n1) (Col = 0)
    C D
    RY/BY

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    D 8C Address input Data input 11 8C Address input Data input 15 E


    Address Address
    CA0 to CA12, PA0 to PA17 CA0 to CA12, PA0 to PA17
    (Page M1 ; District 0) (Page N1 ; District 1)
    D E
    RY/BY tDCBSYW1 tDCBSYW2

    E 60 Address input 60 Address input 3A 00 Address input 05 Address input E0 Data output F
    Address Address Address Address
    PA0 to PA17 PA0 to PA17 CA0 to CA12, PA0 to PA17 CA0 to CA12
    (Page m63 ; District 0) (Page n63 ; District 1) (Page m63) (Col = 0)

    E F
    RY/BY tDCBSYR2

    F 00 Address input 05 Address input E0 Data output 8C Address input Data input 11 G
    Address Address Address
    CA0 to CA12, PA0 to PA17 CA0 to CA12 CA0 to CA12, PA0 to PA17
    (Page n63) (Col = 0) (Page M63 ; District 0)
    F G
    RY/BY tDCBSYW1

    G 8C Address input Data input 10


    Address Note)
    CA0 to CA12, PA0 to PA17 This operation needs to be executed within each District.
    (Page N63 ; District 1)
    G Data input is required only if previous data output needs to be altered.
    RY/BY If the data has to be changed, locate the desired address with the column and page address input after
    tPROG (*1)
    the 8Ch command, and change only the data that needs be changed.
    (*1) tPROG: Since the last page programming by 10h command is initiated after the previous cache If the data does not have to be changed, data input cycles are not required.
    program, the tPROG* during cache programming is given by the following equation.
    Make sure WP is held to High level when Multi Page Copy (2) operation is performed.
    tPROG = tPROG of the last page + tPROG of the previous page-A Also make sure the Multi Page Copy operation is terminated with 8Ch-10h command sequence
    A = (command input cycle + address input cycle + data output/input cycle time of the last page)
    If “A” exceeds the tPROG of previous page, tPROG of the last page is tPROG max.

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    Auto Block Erase
    The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “D0h” which
    follows the Erase Setup command “60h”. This two-cycle process for Erase operations acts as an extra layer of
    protection from accidental erasure of data due to external noise. The device automatically executes the Erase
    and Verify operations.

    Pass
    60 D0 70 I/O
    Block Address Erase Start Status Read Fail
    input: 3 cycles command command

    RY / BY Busy

    Multi Block Erase


    The Multi Block Erase operation starts by selecting two block addresses before D0h command as in below
    diagram. The device automatically executes the Erase and Verify operations and the result can be monitored by
    checking the status by 71h status read command. For details on 71h status read command, refer to section
    “Multi Page Program with Data Cache”.

    Pass
    60 60 D0 71 I/O
    Status Read Fail
    Block Address Block Address Erase Start
    command
    input: 3 cycles input: 3 cycles command
    District 0 District 1

    RY / BY Busy

    Internal addressing in relation with the Districts


    To use Multi Block Erase operation, the internal addressing should be considered in relation with the District.
    • The device consists from 2 Districts.
    • Each District consists from 2048 erase blocks.
    • The allocation rule is follows.
    District 0: Block 0, Block 2, Block 4, Block 6,···, Block 4094
    District 1: Block 1, Block 3, Block 5, Block 7,···, Block 4095

    Address input restriction for the Multi Block Erase


    There are following restrictions in using Multi Block Erase

    (Restriction)
    Maximum one block should be selected from each District.
    For example;
    (60) [District 0] (60) [District 1] (D0)

    (Acceptance)
    There is no order limitation of the District for the address input.
    For example, following operation is accepted;
    (60) [District 1] (60) [District 0] (D0)

    It requires no mutual address relation between the selected blocks from each District.

    Make sure to terminate the operation with D0h command. If the operation needs to be terminated before D0h
    command input, input the FFh reset command to terminate the operation.

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    READ FOR COPY-BACK WITH DATA OUTPUT TIMING GUIDE
    Copy-Back operation is a sequence execution of Read for Copy-Back and of copy-back program with the
    destination page address. A read operation with “35h” command and the address of source page moves the
    whole 4328byte data into the internal data buffer. Bit errors are checked by sequential reading the data. In the
    case where there is no bit error, the data don’t need to be reloaded. Therefore Copy-Back program operation is
    initiated by issuing Page-Copy Data-Input command (85h) with destination page address. Acutual programming
    operation begins after Program Confirm command (10h) is issued. Once the program process starts, the Read
    Status Register command (70h) may be enterd to read the status register. The system contoller can detect the
    completion of a program cycle by monitoring the RY / BY output, or the Status Bit (I/O7) of the Status Register.
    When the Copy-Back Program is complete, the Write Status Bit (I/O1) may be checked. The command register
    remains in Read Status command mode until another valid command is written to the command register.
    During copy-Back program, data modification is possible using randam data input command (85h) as shown
    below.

    Page Copy-Back Program Operation

    tR tPROG
    R/ B

    ”0”
    I/Ox 00h Add.(5Cycles) 35h Data Output 85h Add.(5Cycles) 10h 70h I/O1 Pass
    Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2 & Page Add.1,2,3 ”1”
    Source Address Destination Address
    Fail

    NOTE: 1. Copy-Back Program operation is allowed only within the same district.

    Page Copy-Back Program Operation with Random Data Input

    tR tPROG
    R/ B

    I/Ox 00h Add.(5Cycles) 35h Data Output 85h Add.(5Cycles) Data 85h Add.(2Cycles) Data 10h 70h

    Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2
    Source Address Destination Address
    There is no limitation for the number of repetition

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    Two-Plane Copy-Back Program Operation
    Multi Page Copy-Back Program is an extension of Copy-Back Program, for a single plane with 4328byte data
    registers. Since the device is equipped with two memory planes, activating the two sets of 4328 byte data
    registers enable a simultaneous programming of two pages. Same page address (PA0 to PA5) within two
    districts has to be selected.
    tR
    R/ B

    I/Ox 60h Address(3Cycle) 60h Address(3Cycle) 35h

    Row Add.1,2,3 Row Add.1,2,3


    1
    PA0~PA5 : Valid PA0~PA5 : Valid
    PA6 : Fixed ‘Low’ PA6 : Fixed ‘High’
    PA7~PA17 : Valid PA7~PA17 : Valid

    R/ B

    I/Ox 00h Address(5Cycle) 05h Address(2Cycle) E0h Data Output

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2


    1 2
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘Low’
    PA7~PA17 : Valid

    R/ B

    I/Ox 00h Address(5Cycle) 05h Address(2Cycle) E0h Data Output

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2


    2 3
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘High’
    PA7~PA17 : Valid
    tDCBSYW1 tPROG
    R/ B

    I/Ox 85h Add.(5Cycles) 11h 81h Add.(5Cycles) 10h 70h


    *2
    Note
    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 & Row Add.1,2,3
    3
    Destination Address Destination Address
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid PA0~PA5 : Valid
    PA6 : Fixed ‘Low’ PA6 : Fixed ‘High’
    PA7~PA17 : Valid PA7~PA17 : Valid

    Plane0 Plane1

    Source page Source page

    Target page Target page (1) : Multi Page Read for Copy Back
    (2) : Multi Page Random Data Out
    (1) (3) (1) (3) (3) : Multi Page Copy-Back Program

    Data field Spare field Data field Spare field


    (2) (2)

    NOTE: 1. Copy-Back Program operation is allowed only within the same district.
    2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.

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    Two-Plane Copy-Back Program Operation with Random Data Input

    tR
    R/ B

    I/Ox 60h Address(3Cycle) 60h Address(3Cycle) 35h

    Page Add.1,2,3 Page Add.1,2,3


    1
    PA0~PA5 : Valid PA0~PA5 : Valid
    PA6 : Fixed ‘Low’ PA6 : Fixed ‘High’
    PA7~PA17 : Valid PA7~PA17 : Valid

    R/ B

    I/Ox 00h Address(5Cycle) 05h Address(2Cycle) E0h Data Output

    Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2


    1 2
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘Low’
    PA7~PA17 : Valid

    R/ B

    I/Ox 00h Address(5Cycle) 05h Address(2Cycle) E0h Data Output

    Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2


    2 3
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘High’
    PA7~PA17 : Valid
    tDBSY
    R/ B

    I/Ox 85h Add.(5Cycles) Data 85h Add.(2Cycles) Data 11h


    *2
    Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2 Note
    3 4
    Destination Address
    CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘Low’
    PA7~PA17 : Valid

    tPROG
    R/ B

    I/Ox 81h Add.(5Cycles) Data 85h Add.(2Cycles) Data 10h

    Col. Add.1,2 & Page Add.1,2,3 Col. Add.1,2


    4
    Destination Address
    CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘High’
    PA7~PA17 : Valid

    NOTE: 1. Copy-Back Program operation is allowed only within the same district.
    2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.

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    2KB Program Operation Timing Guide
    The device is designed also to support the program operation with 2KByte data to offer the backward
    compatibility to the controller which uses the NAND Flash with 2KByte page. The sequence of command,
    address and data input is shown below.

    (2KBx2) Program Operation

    tDCBSYW1 tPROG
    R/ B

    I/O0~7 80h Address & Data Input 11h 80h Address & Data Input 10h 70h
    Note

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 & Row Add.1,2,3
    2112 Byte Data 2112 Byte Data
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid PA0~PA5 : Must be same with the previous
    PA6 : Valid PA6 : Must be same with the previous
    PA7~PA17 : Valid PA7~PA17 : Must be same with the previous

    NOTE: 1. Any command between 11h and 81h is prohibited except 70h/F1h and FFh

    (2KBx2) Copy-Back
    tR
    R/ B

    I/Ox 00h Add.(5Cycles) 35h Data Output

    Col. Add.1,2 & Row Add.1,2,3


    1
    Source Address
    tDCBSYW1 tPROG
    R/ B

    I/Ox 85h Add.(5Cycles) Data 11h 85h Add.(5Cycles) Data 10h

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 & Row Add.1,2,3
    1
    Destination Address Destination Address
    CA0~CA12 : Valid CA0~CA12 : Valid
    PA0~PA5 : Valid PA0~PA5 : Must be same with the previous
    PA6 : Valid PA6 : Must be same with the previous
    PA7~PA17 : Valid PA7~PA17 : Must be same with the previous

    NOTE: 1. Copy-Back is allowed only within the same memory district.


    2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.

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    (2KBx2) Copy-Back with Random Data Input

    tR
    R/ B

    I/Ox 00h Add.(5Cycles) 35h Data Output

    Col. Add.1,2 & Row Add.1,2,3


    1
    Source Address
    tDCBSYW1

    R/ B

    I/Ox 85h Add.(5Cycles) Data 85h Add.(2Cycles) Data 11h


    *2
    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 Note
    1 2
    Destination Address
    CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Valid
    PA7~PA17 : Valid

    tPROG
    R/ B

    I/Ox 85h Add.(5Cycles) Data 85h Add.(2Cycles) Data 10h

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2


    2
    Destination Address
    CA0~CA12 : Valid
    PA0~PA5 : Must be same with the previous
    PA6 : Must be same with the previous
    PA7~PA17 : Must be same with the previous

    NOTE: 1. Copy-Back is allowed only within the same memory district.


    2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.

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    Multi Page Copy-Back using 4KB Buffer RAM
    The deveice consists of 4KB pages and can support Multi Plane program operation. The internal RAM
    requirement for a controller is 8KB, but for those controllers which support less than 8KB RAM, the sequence of
    command, address and data input is shown below for Multi Plane program operation.

    District0 District1

    Source page Source page

    (1) : Two-Plane Read for Copy-Back


    (2) : Random Data Out On Plane 0(Up to 4328Byte)
    (3) : Random Data In On Plane 0(Up to 4328Byte)
    Target page Target page (4) : Random Data Out On Plane 1(Up to 4328Byte)
    (5) : Random Data In On Plane 1(Up to 4328Byte)
    (1) (6) (1) (6) (6) : Two-Plane Program for Copy-Back

    4KByte 4KByte

    Data field Spare field Data field Spare field


    (2) (3) (4) (5)

    Multi Page Copy-Back with Random Data Input


    tR
    R/ B

    I/Ox 60h Add.(3Cycle) 60h Add.(3Cycle) 35h 00h Add.(5Cycle) 05h Add.(2Cycle) E0h DOUT

    Row Add.1,2,3 Row Add.1,2,3 Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 Up to 4328Byte
    PA0~PA5 : Valid PA0~PA5 : Valid CA0~CA12 : Fixed ‘Low’ CA0~CA12 : Valid
    PA6 : Fixed ‘Low’ PA6 : Fixed ‘High’ PA0~PA5 : Fixed ‘Low’
    1
    PA7~PA17 : Valid PA7~PA17 : Valid PA6 : Fixed ‘Low’
    PA7~PA17 : Fixed ‘Low’
    tDCBSYW1
    R/ B

    I/Ox 85h Add.(5Cycle) DIN 85h Add.(2Cycle) DIN 11h 00h Add.(5Cycle) 05h Add.(2Cycle) E0h DOUT

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2, Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2 Up to 4328Byte
    Destination Address CA0~CA12 : Fixed ‘Low’ CA0~CA12 : Valid
    1 PA0~PA5 : Fixed ‘Low’
    2
    CA0~CA12 : Valid
    PA0~PA5 : Valid PA6 : Fixed ‘High’
    PA6 : Fixed ‘Low’ PA7~PA17 : Fixed ‘Low’
    PA7~PA17 : Valid
    tPROG
    R/ B

    I/Ox 81h Add.(5Cycle) DIN 85h Add.(2Cycle) DIN 10h 70h

    Col. Add.1,2 & Row Add.1,2,3 Col. Add.1,2,


    Destination Address
    2
    CA0~CA12 : Valid
    PA0~PA5 : Valid
    PA6 : Fixed ‘High’
    PA7~PA17 : Valid

    NOTE: 1. Copy-Back is allowed only within the same memory district.

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    ID Read
    The device contains ID codes which can be used to identify the device type, the manufacturer, and features of
    the device. The ID codes can be read out under the following timing conditions:

    CLE
    tCEA
    CE

    WE
    tAR

    ALE

    RE
    tREA
    See See See
    I/O 90h 00h 98h D3h table 5 table 5 table 5
    ID Read Address 00 Maker code Device code
    command

    Table 5. Code table

    Description I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 Hex Data

    1st Data Maker Code 1 0 0 1 1 0 0 0 98h

    2nd Data Device Code 1 1 0 1 0 0 1 1 D3h

    3rd Data Chip Number, Cell Type ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ See table

    4th Data Page Size, Block Size ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ See table

    5th Data Plane Number ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ See table

    3rd Data

    Description I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1

    1 0 0
    2 0 1
    Internal Chip Number
    4 1 0
    8 1 1

    2 level cell 0 0
    4 level cell 0 1
    Cell Type
    8 level cell 1 0
    16 level cell 1 1

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    4th Data

    Description I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1

    1 KB 0 0
    Page Size 2 KB 0 1
    (without redundant area) 4 KB 1 0
    8 KB 1 1

    64 KB 0 0
    Block Size 126 KB 0 1
    (without redundant area) 256 KB 1 0
    512 KB 1 1

    5th Data

    Description I/O8 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1

    1 Plane 0 0
    2 Plane 0 1
    Plane Number
    4 Plane 1 0
    8 Plane 1 1

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    Status Read
    The device automatically implements the execution and verification of the Program and Erase operations.
    The Status Read function is used to monitor the Ready/Busy status of the device, determine the result (pass
    /fail) of a Program or Erase operation, and determine whether the device is in Protect mode. The device status is
    output via the I/O port using RE or CE after a “70h” or “F1h” command input. This two signal control allows
    the system to poll the progress of each device in multiple memory connections even when Ready/Busy pins are
    common-wired. The Status Read can also be used during a Read operation to find out the Ready/Busy status.
    The resulting information is outlined in Table 6 and Tabel 7.

    Table 6. Status output table

    Page Program Read


    Definition Cache Program
    Block Erase Cache Read

    Chip Status1
    I/O1 Pass/Fail Pass/Fail Invalid
    Pass: 0 Fail: 1

    Chip Status 2
    I/O2 Invalid Pass/Fail Invalid
    Pass: 0 Fail: 1

    I/O3 Not Used 0 0 0

    I/O4 Not Used 0 0 0

    I/O5 Not Used 0 0 0

    Page Buffer Ready/Busy


    I/O6 Ready/Busy Ready/Busy Ready/Busy
    Ready: 1 Busy: 0

    Data Cache Ready/Busy


    I/O7 Ready/Busy Ready/Busy Ready/Busy
    Ready: 1 Busy: 0

    Write Protect
    I/O8 Write Protect Write Protect Write Protect
    Not Protected :1 Protected: 0

    The Pass/Fail status on I/O1 and I/O2 is only valid during a Program/Erase operation when the device is in the Ready state.

    Chip Status 1:
    During a Auto Page Program or Auto Block Erase operation this bit indicates the pass/fail result.
    During a Auto Page Programming with Data Cache operation, this bit shows the pass/fail results of the
    current page program operation, and therefore this bit is only valid when I/O6 shows the Ready state.

    Chip Status 2:
    This bit shows the pass/fail result of the previous page program operation during Auto Page Programming
    with Data Cache. This status is valid when I/O7 shows the Ready State.
    The status output on the I/O6 is the same as that of I/O7 if the command input just before the 70h is not
    15h or 31h.

    Tabel 7 : F1h Read Status Register Definition

    Definition Page Program Block Erase Read

    I/O 1 Pass : “0”, Fail : “1” Pass/Fail Pass/Fail Not use


    I/O 2 Pass : “0”, Fail : “1” Plane0 Pass/Fail Plane0 Pass/Fail Not use
    I/O 3 Pass : “0”, Fail : “1” Plane1 Pass/Fail Plane1 Pass/Fail Not use
    I/O 4 Don’t-cared Not use Not use Not use
    I/O 5 Don’t-cared Not use Not use Not use
    I/O 6 Don’t-cared Not use Not use Not use
    I/O 7 Busy : “0”, Ready : “1” Ready/Busy Ready/Busy Ready/Busy
    I/O 8 Protected : “0”, Not Protected :
    Write Protect Write Protect Write Protect
    “1”

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    An application example with multiple devices is shown in the figure below.

    CE1 CE2 CE3 CEN CEN + 1

    CLE
    ALE Device Device Device Device Device
    WE 1 2 3 N N+1
    RE

    I/O1
    to I/O8
    RY / BY

    RY / BY Busy

    CLE

    ALE

    WE

    CE1

    CEN

    RE

    I/O 70h 70h

    Status on Device 1 Status on Device N

    System Design Note: If the RY / BY pin signals from multiple devices are wired together as shown in the
    diagram, the Status Read function can be used to determine the status of each individual device.

    Reset

    The Reset mode stops all operations. For example, in case of a Program or Erase operation, the internally
    generated voltage is discharged to 0 volt and the device enters the Wait state.
    Reset during a Cache Program/Page Copy may not just stop the most recent page program but it may also
    stop the previous program to a page depending on when the FF reset is input.
    The response to a “FFh” Reset command input during the various device operations is as follows:

    When a Reset (FFh) command is input during programming

    80 10 FF 00

    Internal VPP

    RY / BY
    tRST (max 30 μs)

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    When a Reset (FFh) command is input during erasing

    D0 FF 00

    Internal erase
    voltage

    RY / BY
    tRST (max 500 μs)

    When a Reset (FFh) command is input during Read operation

    00 30 FF 00

    RY / BY

    tRST (max 10 μs)

    When a Reset (FFh) command is input during Ready

    FF 00

    RY / BY

    tRST (max 10 μs)

    When a Status Read command (70h) is input after a Reset

    FF 70
    I/O status: Pass/Fail → Pass
    : Ready/Busy → Ready
    RY / BY

    When two or more Reset commands are input in succession

    (1) (2) (3)

    10 FF FF FF

    RY / BY

    The second FF command is invalid, but the third FF command is valid.

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    APPLICATION NOTES AND COMMENTS

    (1) Power-on/off sequence:

    The timing sequence shown in the figure below is necessary for the power-on/off sequence.
    The device internal initialization starts after the power supply reaches an appropriate level in the power on
    sequence. During the initialization the device Ready/Busy signal indicates the Busy state as shown in the
    figure below. In this time period, the acceptable commands are FFh or 70h/71h/F1h.
    The WP signal is useful for protecting against data corruption at power-on/off.

    2.7 V 2.7 V
    2.5 V 2.5 V
    ≥ 1ms
    VCC 0.5 V 0.5 V
    0 V
    Don’t Don’t Don’t
    care care care
    CE , WE , RE
    CLE, ALE
    VIH

    VIL VIL
    WP 2 ms max 2 ms max
    100 μs max Operation 100 μs max

    Invalid Don’t Invalid


    care
    Ready/Busy

    (2) Power-on Reset


    The device goes into automatic self-initialization during power on if PSL is tied either to GND or NU.
    During the initialization process, the device consumes a maximum current of 30mA (ICCO0). If PSL is tied to
    VCC, the device will not complete its self-initialization during power on and will not consume ICCO0, and
    completes the initialization process with the first Reset command input after power on. During the first FFh
    reset Busy period, the device consumes a maximum current of 30mA (ICCO0). In either case (PSL = GND/NU
    or VCC), The following sequence is necessary because some input signals may not be stable at power-on.

    Power on FF

    Reset

    (3) Prohibition of unspecified commands

    The operation commands are listed in Table 3. Input of a command other than those specified in Table 3 is
    prohibited. Stored data may be corrupted if an unknown command is entered during the command cycle.

    (4) Restriction of commands while in the Busy state

    During the Busy state, do not input any command except 70h(71h, F1h) and FFh.

    61 2011-07-01C
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    (5) Acceptable commands after Serial Input command “80h”

    Once the Serial Input command “80h” has been input, do not input any command other than the Column
    Address Change in Serial Data Input command “85h”, Auto Program command “10h”, Multi Page Program
    command “11h”, Auto Program with Data Cache Command “15h”, or the Reset command “FFh”.

    80 FF

    WE

    Address input

    RY / BY

    If a command other than “85h” , “10h” , “11h” , “15h” or “FFh” is input, the Program operation is not
    performed and the device operation is set to the mode which the input command specifies.

    80 XX 10
    Mode specified by the command. Programming cannot be executed.

    Command other than


    “85h”, “10h”, “11h”, “15h” or “FFh”

    (6) Addressing for program operation

    Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of
    the block to MSB (most significant bit) page of the block. Random page address programming is prohibited.

    From the LSB page to MSB page Ex.) Random page program (Prohibition)

    DATA IN: Data (1) Data (64) DATA IN: Data (1) Data (64)

    Data register Data register

    Page 0 (1) Page 0 (2)


    Page 1 (2) Page 1 (32)
    Page 2 (3) Page 2 (3)

    Page 31 (32) Page 31 (1)

    Page 63 (64) Page 63 (64)

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    (7) Status Read during a Read operation

    00

    [A]
    Command 00 30 70

    CE

    WE

    RY/BY

    RE
    Address N Status Read
    command input Status output
    Status Read
    .

    The device status can be read out by inputting the Status Read command “70h” in Read mode. Once the
    device has been set to Status Read mode by a “70h” command, the device will not return to Read mode
    unless the Read command “00h” is inputted during [A]. If the Read command “00h” is inputted during [A],
    Status Read mode is reset, and the device returns to Read mode. In this case, data output starts
    automatically from address N and address input is unnecessary

    (8) Auto programming failure

    Fail
    80 10 70 I/O 80 10
    Address Data Address Data
    M input N input
    80
    If the programming result for page address M is Fail, do not try to program the
    10 page to address N in another block without the data input sequence.
    Because the previous input data has been lost, the same input sequence of 80h
    M command, address and data is necessary.

    (9) RY / BY : termination for the Ready/Busy pin ( RY / BY )

    A pull-up resistor needs to be used for termination because the RY / BY buffer consists of an open drain
    circuit.

    VCC
    Ready
    VCC
    VCC
    R Busy
    Device
    RY / BY
    tf tr
    CL

    VCC = 3.3 V
    VSS Ta = 25°C
    1.5 μs CL = 100 pF 15 ns
    tf
    tr 1.0 μs 10 ns tf
    tr
    0.5 μs 5 ns
    This data may vary from device to device.
    We recommend that you use this data as a
    0
    reference when selecting a resistor value. 1 KΩ 2 KΩ 3 KΩ 4 KΩ
    R
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    (10) Note regarding the WP signal

    The Erase and Program operations are automatically reset when WP goes Low. The operations are
    enabled and disabled as follows:

    Enable Programming

    WE

    DIN 80 10

    WP

    RY / BY

    tWW (100 ns MIN)

    Disable Programming

    WE

    DIN 80 10

    WP

    RY / BY

    tWW (100 ns MIN)

    Enable Erasing

    WE

    DIN 60 D0

    WP

    RY / BY

    tWW (100 ns MIN)

    Disable Erasing

    WE

    DIN 60 D0

    WP

    RY / BY

    tWW (100 ns MIN)

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    (11) When six address cycles are input

    Although the device may read in a sixth address, it is ignored inside the chip.

    Read operation

    CLE

    CE

    WE

    ALE

    I/O 00h 30h


    Ignored
    Address input
    RY / BY

    Program operation

    CLE

    CE

    WE

    ALE

    I/O 80h

    Ignored Data input


    Address input

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    (12) Several programming cycles on the same page (Partial Page Program)

    Each segment can be programmed individually as follows:

    1st programming Data Pattern 1 All 1 s

    2nd programming All 1 s Data Pattern 2 All 1 s

    4th programming All 1 s Data Pattern 4

    Result Data Pattern 1 Data Pattern 2 Data Pattern 4

    66 2011-07-01C
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    (13) Invalid blocks (bad blocks)

    The device occasionally contains unusable blocks. Therefore, the following issues must be recognized:

    Please do not perform an erase operation to bad blocks. It may be


    impossible to recover the bad block information if the information is
    erased.
    Bad Block
    Check if the device has any bad blocks after installation into the system.
    Refer to the test flow for bad block detection. Bad blocks which are
    detected by the test flow must be managed as unusable blocks by the
    system.
    A bad block does not affect the performance of good blocks because it is
    Bad Block
    isolated from the bit lines by select gates.

    The number of valid blocks over the device lifetime is as follows:

    MIN TYP. MAX UNIT

    Valid (Good) Block Number 4016 ⎯ 4096 Block

    Bad Block Test Flow


    Regarding invalid blocks, bad block mark is in either the 1st or the 2nd page.

    Read Check :
    Read either column 0 or 4096 of the 1st page or the
    2nd page of each block. If the data of the column is not
    Start FF (Hex), define the block as a bad block.

    Block No = 1

    Fail
    Read Check

    Pass
    Block No. = Block No. + 1 Bad Block *1

    No
    Last Block

    Yes

    End

    *1: No erase operation is allowed to detected bad blocks

    67 2011-07-01C
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    (14) Failure phenomena for Program and Erase operations

    The device may fail during a Program or Erase operation.


    The following possible failure modes should be considered when implementing a highly reliable system.

    FAILURE MODE DETECTION AND COUNTERMEASURE SEQUENCE

    Block Erase Failure Status Read after Erase → Block Replacement

    Page Programming Failure Status Read after Program → Block Replacement

    Programming Failure
    Single Bit ECC
    “1 to 0”

    • ECC: Error Correction Code. 4 bit correction per 512 Bytes is necessary.

    • Block Replacement

    Program

    Error occurs When an error happens in Block A, try to reprogram the


    Buffer data into another Block (Block B) by loading from an
    memory external buffer. Then, prevent further system accesses
    Block A
    to Block A ( by creating a bad block table or by using
    another appropriate scheme).

    Block B

    Erase

    When an error occurs during an Erase operation, prevent future accesses to this bad block
    (again by creating a table within the system or by using another appropriate scheme).

    (15) Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery
    is low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data
    and/or damage to data.

    (16) The number of valid blocks is on the basis of single plane operations, and this may be decreased with two
    plane operations.

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    (17) Reliability Guidance
    This reliability guidance is intended to notify some guidance related to using NAND flash with
    4 bit ECC for each 512 bytes. For detailed reliability data, please refer to TOSHIBA’s reliability note.
    Although random bit errors may occur during use, it does not necessarily mean that a block is bad.
    Generally, a block should be marked as bad when a program status failure or erase status failure is detected.
    The other failure modes may be recovered by a block erase.
    ECC treatment for read data is mandatory due to the following Data Retention and Read Disturb failures.

    • Write/Erase Endurance
    Write/Erase endurance failures may occur in a cell, page, or block, and are detected by doing a status read
    after either an auto program or auto block erase operation. The cumulative bad block count will increase
    along with the number of write/erase cycles.

    • Data Retention
    The data in memory may change after a certain amount of storage time. This is due to charge loss or charge
    gain. After block erasure and reprogramming, the block may become usable again.

    Here is the combined characteristics image of Write/Erase Endurance and Data Retention.

    Data
    Retention
    [Years]

    Write/Erase Endurance [Cycles]

    • Read Disturb
    A read operation may disturb the data in memory. The data may change due to charge gain. Usually, bit
    errors occur on other pages in the block, not the page being read. After a large number of read cycles
    (between block erases), a tiny charge may build up and can cause a cell to be soft programmed to another
    state. After block erasure and reprogramming, the block may become usable again.

    69 2011-07-01C
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    Package Dimensions

    TSOP I 48-P-1220-0.50C Unit: mm

    0.08 M
    1 48

    0.22 0.08

    12.4MAX
    12.0 0.1

    0.1
    0.5
    24 25

    0.25 TYP
    18.4 0.1 1.0 0.1 0.1 0.05
    20.0 0.2 1.2MAX

    0.145 0.055

    0~10

    0.5 0.1

    Weight: 0.53g (typ.)

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    Revision History

    Date Rev. Description


    2009-12-24 1.00 Original version
    2010-06-10 1.00 ECC = TBD was changed to 4bit
    2010-12-13 1.01 Package was corrected from TSOP I 48-P-1220-0.50 to TSOP I 48-P-1220-0.50C
    2011-07-01 1.10 Deleted TENTATIVE notation.

    71 2011-07-01C
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    RESTRICTIONS ON PRODUCT USE
    • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
    in this document, and related hardware, software and systems (collectively “Product”) without notice.

    • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
    TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

    • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
    responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
    systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
    injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
    Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
    all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
    for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
    instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
    own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
    design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
    diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
    parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
    APPLICATIONS.

    • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
    equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
    Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
    reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
    public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
    in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
    equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
    power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
    document.

    • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

    • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
    applicable laws or regulations.

    • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
    infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
    any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

    • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
    FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
    WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
    LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
    LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
    SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
    FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

    • Do not use or otherwise make available Product or related software or technology for any military purposes, including without
    limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
    technology products (mass destruction weapons). Product and related software and technology may be controlled under the
    Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
    or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

    • Product is subject to foreign exchange and foreign trade control laws.

    • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
    Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
    including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
    noncompliance with applicable laws and regulations.

    72 2011-07-01C
    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

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