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MOS Theory SP

The document discusses MOSFET equations and circuits. It provides: 1) Equations for the three regions of operation (cut-off, linear, and saturation) of n-channel and p-channel MOSFETs. 2) Typical parameter values for the simplest MOSFET model in SPICE. 3) Examples of using the equations to solve for drain current and determine the operating region given voltages and transistor parameters.

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55 views3 pages

MOS Theory SP

The document discusses MOSFET equations and circuits. It provides: 1) Equations for the three regions of operation (cut-off, linear, and saturation) of n-channel and p-channel MOSFETs. 2) Typical parameter values for the simplest MOSFET model in SPICE. 3) Examples of using the equations to solve for drain current and determine the operating region given voltages and transistor parameters.

Uploaded by

maxx
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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1.

MOSFET Equations

a) N-channel MOSFET

Cut Off VGS " VT IDS = 0


Linear VGS > VT , VDS " VGS # VT W # VDS 2 &
IDS = µn Cox (V
% GS " VT )VDS " ((1+ )VDS )
L $ 2 '
! !
Saturation VGS > VT , VDS > VGS " VT 1 W
! ! IDS = µn Cox (VGS " VT ) 2 (1+ #VDS )
2 L
!
! !
!

The simplest model in SPICE (Level 1 or default model) uses the above equations.

Parameter SPICE Parameter Units Typical Values


µnCox KP A/V2 200µ
VT0 VTO V 0.5 – 1.0
λ LAMBDA V-1 0.05 – 0.005

b) P-channel MOSFET

Cut Off VSG " VT ISD = 0


Linear VSG > VT , VSD " VSG # VT W# VSD &
2
ISD = µ p Cox %(VSG " VT )VSD " ((1+ )VSD )
L$ 2 '
! !
Saturation VSG > VT , VSD > VSG " VT 1 W
! ! ISD = µ p Cox (VSG " VT ) 2 (1+ #VSD )
2 L
!
! !
!
Example)
VS = 4 V, VG = 2 V, VD = 1 V
VT = -0.8 V, λ = 0, Kp = 100 µA/V2
W = 10 µm, L= 2 µm
Find MOSFET type, operation region, IDS.

- Solution
VDS > VGS " VT # saturation
100µ 10µ
ISD = (2 " "0.8 ) 2 (1+ 0) = 360µA
2 2µ
IDS = "360µA

! 2. MOSFET Circuits

Example) The PMOS transistor has VT = -2 V, Kp = 8 µA/V2,


L = 10 µm, λ = 0.
Find the values required for W and R in order to establish
a drain current of 0.1 mA and a voltage VD of 2 V.

- Solution
VD = VG " VSD > VSG # VT " saturation
1 W 8µ W
IDS = Kp (VSG # VT ) 2 (1+ $VSD ) = (3 # 2) 2 (1+ 0) = 0.1mA
2 L 2 10µ
V 2
IR = D = = 0.1mA
R R
W = 250µm, R = 20k%

!
Example) The PMOS transistor has VT = -1 V, Kp = 8 µA/V2,
W/L = 25, λ = 0.
For I = 100 µA, find the VSD and VSG for R = 0, 10k, 30k, 100k.

- Solution
λ = 0 (no channel length modulation)

1) R = 0
VD = VG " VSD > VSG # VT " saturation
1 W 8µ
ISD = Kp (VSG # VT ) 2 = $ 25 $ (VSG #1) 2 = 100µ
2 L 2
VSG = 2V VSD = 2V

2) R = 10k
VD # VG = IR = 100µ $10k = 1 " VSD = VSG # VT " saturation or linear
1 W 8µ
ISD = Kp (VSG # VT ) 2 = $ 25 $ (VSG #1) 2 = 100µ
2 L 2
VSG = 2V VSD = 1V

3) R = 30k
VD # VG = IR = 100µ $ 30k = 3 " VSD < VSG # VT " linear
W V 2 V 2
ISD = Kp ((VSG # VT )VSD # SD ) = 8µ $ 25 $ ((VSD + 3 #1)VSD # SD ) = 100µ
L 2 2
VSD % 0.24V VSG = 3.24V

4) R = 100k
VD # VG = IR = 100µ $100k = 10 " VSD < VSG # VT " linear
W V 2 V 2
ISD = Kp ((VSG # VT )VSD # SD ) = 8µ $ 25 $ ((VSD + 10 #1)VSD # SD ) = 100µ
L 2 2
VSD % 0.06V VSG = 10.06V

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