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    Usc Ee479 HW1 2018

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    Nafi Ifan
    This document contains 6 homework problems for an electronics engineering course. The problems cover estimating transistor model parameters from a diagram, sketching characteristics of an NMOS transistor, estimating the n parameter from a subthreshold modeling equation, modeling two transistors in series as an equivalent transistor, sketching current and transconductance as a function of voltage for different transistor circuits, and sketching the output voltage as a function of input voltage for different transistor circuits.

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    Usc Ee479 HW1 2018

    Uploaded by

    Nafi Ifan
    88 views3 pages
    This document contains 6 homework problems for an electronics engineering course. The problems cover estimating transistor model parameters from a diagram, sketching characteristics of an NMOS transistor, estimating the n parameter from a subthreshold modeling equation, modeling two transistors in series as an equivalent transistor, sketching current and transconductance as a function of voltage for different transistor circuits, and sketching the output voltage as a function of input voltage for different transistor circuits.

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    USC HW1

    Original Title

    USC_EE479_HW1_2018

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    This document contains 6 homework problems for an electronics engineering course. The problems cover estimating transistor model parameters from a diagram, sketching characteristics of an NMOS transistor, estimating the n parameter from a subthreshold modeling equation, modeling two transistors in series as an equivalent transistor, sketching current and transconductance as a function of voltage for different transistor circuits, and sketching the output voltage as a function of input voltage for different transistor circuits.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    88 views3 pages

    Usc Ee479 HW1 2018

    Uploaded by

    Nafi Ifan
    This document contains 6 homework problems for an electronics engineering course. The problems cover estimating transistor model parameters from a diagram, sketching characteristics of an NMOS transistor, estimating the n parameter from a subthreshold modeling equation, modeling two transistors in series as an equivalent transistor, sketching current and transconductance as a function of voltage for different transistor circuits, and sketching the output voltage as a function of input voltage for different transistor circuits.

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    M. S.W.

    Chen
    EE479L Fall 2018

    University of Southern California

    EE479 Fall 2017

    Homework 1 (Due Sept 8 in class)

    1. Using the figure below, estimate the transistor model (Level 1) parameters: VTO ,
    γ, k, and λ. Assume W/L=10, ϕf =0.3V. Explain your method.

    2. An NMOS transistor has the following parameters: W=0.65 um, L= 65 nm, VTO =0.3 V,
    =0.5V1/2 , k=100 μA/V 2 , and =0.01V −1 . Sketch gm-Vds characteristics for Vds from 0
    to 1V and Vbs=0 V and −0.5V, assuming Vgs=1V.

    3. The figure below is the loge(Id)-Vgs characteristic with and without subthreshold
    modeling. Assuming the subthreshold current can be approximated with
    M. S.W. Chen

    Vgs −Vth
    Id = I0 e nVT

    ,where VT=26mV. Estimate the value of n in this model.

    4. Show that two MOS transistors connected in series with channel lengths of L1 and L2 and
    identical channel widths of W can be modeled as one equivalent MOS transistor whose
    width is W and whose length is L1 + L2, as shown in the figure. Assume the transistors are
    identical except for their channel lengths. Ignore the body effect and channel-length
    modulation.
    M. S.W. Chen

    5. Sketch Ix and the transconductance of the transistor as a function of Vx for each circuit in
    the figure as Vx varies from 0 to VDD.

    VDD VDD
    Ix
    R1 Ix R1 Ix

    +2V R1 Vx
    R2 M1 R2 M1 M1
    Vin
    Vx Vx I1

    (a) (b) (c)

    Ix VDD
    +2V
    M1
    I1

    R1 `

    Vx R1 Ix

    I1
    M1
    Vx

    (d) (e)

    6. Sketch Vout as a function of Vin for each circuit in the figure as Vin varies from 0 to
    VDD.

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