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    BDW93C BDW94B/BDW94C: Complementary Silicon Power Darlington Transistors

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    Jose M Peres
    This document provides specifications for STMicroelectronics complementary silicon power Darlington transistors - the BDW93C NPN transistor and BDW94B/BDW94C PNP transistors. It includes maximum ratings, electrical characteristics, mechanical dimensions, and a diagram of the internal schematic for the transistors. The transistors are intended for use in linear and switching industrial equipment applications.

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    BDW93C BDW94B/BDW94C: Complementary Silicon Power Darlington Transistors

    Uploaded by

    Jose M Peres
    173 views6 pages
    This document provides specifications for STMicroelectronics complementary silicon power Darlington transistors - the BDW93C NPN transistor and BDW94B/BDW94C PNP transistors. It includes maximum ratings, electrical characteristics, mechanical dimensions, and a diagram of the internal schematic for the transistors. The transistors are intended for use in linear and switching industrial equipment applications.

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    BDW94C

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    This document provides specifications for STMicroelectronics complementary silicon power Darlington transistors - the BDW93C NPN transistor and BDW94B/BDW94C PNP transistors. It includes maximum ratings, electrical characteristics, mechanical dimensions, and a diagram of the internal schematic for the transistors. The transistors are intended for use in linear and switching industrial equipment applications.

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    Download as PDF, TXT or read online from Scribd
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    173 views6 pages

    BDW93C BDW94B/BDW94C: Complementary Silicon Power Darlington Transistors

    Uploaded by

    Jose M Peres
    This document provides specifications for STMicroelectronics complementary silicon power Darlington transistors - the BDW93C NPN transistor and BDW94B/BDW94C PNP transistors. It includes maximum ratings, electrical characteristics, mechanical dimensions, and a diagram of the internal schematic for the transistors. The transistors are intended for use in linear and switching industrial equipment applications.

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    BDW93C

     BDW94B/BDW94C
    COMPLEMENTARY SILICON POWER
    DARLINGTON TRANSISTORS

    ■ STMicroelectronics PREFERRED
    SALESTYPES
    ■ COMPLEMENTARY PNP - NPN DEVICES
    ■ INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE

    APPLICATIONS
    ■ LINEAR AND SWITCHING INDUSTRIAL

    EQUIPMENT 3
    2
    1
    DESCRIPTION
    The BDW93C is a silicon Epitaxial-Base NPN
    power transistor in monolithic Darlington TO-220
    configuration mounted in Jedec TO-220 plastic
    package. It is intented for use in power linear and
    switching applications.
    The complementary PNP type is BDW94C.
    Also BDW94B is a PNP type.
    INTERNAL SCHEMATIC DIAGRAM

    R1 Typ. = 10 KΩ R2 Typ. = 150 Ω

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Un it
    NPN BDW93C
    PNP BDW94B BDW94C
    V CBO Collector-Base Voltage (IE = 0) 80 100 V
    V CEO Collector-Emitter Voltage (IB = 0) 80 100 V
    IC Collector Current 12 A
    ICM Collector Peak Current 15 A
    IB Base Current 0.2 A
    P tot T otal Dissipation at Tc ≤ 25 C o
    80 W
    o
    Ts tg Storage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C
    For PNP types voltage and current values are negative.

    October 1999 1/6


    BDW93C/BDW94B/BDW94C

    THERMAL DATA
    o
    R thj -case Thermal Resistance Junction-case 1.56 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
    I CBO Collector Cut-off for BDW94B V CB = 80 V 100 µA
    Current (IE = 0) for BDW93C/94C VCB = 100 V 100 µA
    T case = 150 o C
    for BDW94B V CB = 80 V 5 mA
    for BDW93C/94C VCB = 100 V 5 mA
    I CEO Collector Cut-off for BDW94B V CE = 80 V 1 mA
    Current (IB = 0) for BDW93C/94C VCE = 100 V 1 mA
    IEBO Emitter Cut-off Current V EB = 5 V 2 mA
    (I C = 0)
    V CEO(s us) ∗ Collector-Emitt er I C = 100 mA
    Sustaining Voltage for BDW94B 80 V
    (I B = 0) for BDW 93C/94C 100 V
    V CE(sat) ∗ Collector-Emitt er IC = 5 A I B = 20 mA 2 V
    Saturation Voltage I C = 10 A I B = 100 mA 3 V
    V BE(sat) ∗ Base-Emitter IC = 5 A I B = 20 mA 2.5 V
    Saturation Voltage I C = 10 A I B = 100 mA 4 V
    h FE∗ DC Current G ain IC = 3 A V CE = 3 V 1000
    IC = 5 A V CE = 3 V 750 20K
    I C = 10 A V CE = 3 V 100
    VF * Parallel-diode Forward IF = 5 A 1.3 2 V
    Voltage I F = 10 A 1.8 4 V
    h fe Small Signal Current IC = 1 A V CE = 10 V
    Gain f = 1 MHz 20
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
    For PNP types voltage and current values are negative.

    2/6
    BDW93C/BDW94B/BDW94C

    Safe Operating Area DC Current Gain (NPN types)

    Collector Emitter Saturation Voltage (NPN types) DC Transconductance(NPN types)

    Collector Emitter Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (PNP types)

    3/6
    BDW93C/BDW94B/BDW94C

    Saturated Switching Characteristics (NPN types) Saturated Switching Characteristics (PNP types)

    Collector Emitter Saturation Voltage (PNP types) DC Current Gain (PNP types)

    DC Transconductance(PNP types)

    4/6
    BDW93C/BDW94B/BDW94C

    TO-220 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    C 1.23 1.32 0.048 0.051
    D 2.40 2.72 0.094 0.107
    D1 1.27 0.050
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.203
    G1 2.4 2.7 0.094 0.106
    H2 10.0 10.40 0.393 0.409
    L2 16.4 0.645
    L4 13.0 14.0 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.2 6.6 0.244 0.260
    L9 3.5 3.93 0.137 0.154
    DIA. 3.75 3.85 0.147 0.151

    P011C

    5/6
    BDW93C/BDW94B/BDW94C

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

     1999 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

    http://www.st.com
    .

    6/6

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