What Is Spectroscopic Ellipsometry

What is Spectroscopic Ellipsometry
Sponsored by Semilab Semiconductor Physics Laboratory Jan 21 2019
The Ellipsometry is a total optical measurement method. This technique is used to
measure the change of polarization of light when passing through a medium. Due
to the layer structure during reflection the polarized light exhibits distortion, which
permits users to extract the material properties of the medium in this structure.
The distorted polarization can be established using a number of techniques in which
different optical components modulate the light polarization. Semilab employs the most
advanced rotating compensator layout, where a highend, broadband compensator
introduces variable phase shift dependent on the rotation angle in order to establish the
ellipsometric elements spectrally.
Modeling and parameter fitting for the actual structure are required to extract the
thickness and the refractive indices values, this is because ellipsometry is an indirect
metrology. Semilab's Spectroscopic Ellipsometry Analyzer (SEA) software supplies a
wide scope of techniques to create models for the actual structures and powerful
algorithms to fit the model parameters to acquire the values of interest.
The Spectroscopic Ellipsometry measurement technique has a number of benefits.
Firstly, it is an optical method, meaning it is noncontact and nondestructive. Using a
multilayer structure the thickness and optical functions of each layer can be calculated.
It is based on measuring the phase shift of a light beam which travels through a layer
structure so it possesses high sensitivity, and the phase angle measurement does not
depend on the absolute intensity of light. Spectral information about the sample can be
obtained by utilizing white light sources and monochromators.
The ratio of the complex Fresnel reflection coefficients are measured by ellipsometry. It
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can be divided to an amplitude term as it is a complex number, and a phase shift term,
which corresponds to the ellipsometric angles, Ψ and Δ. These parameters contain the
physical properties of the layer structure, such as the layer thickness and refractive
index.
This is a transcendental and highly nonlinear equation, so it must be solved using
numerical techniques, on a modelbased approach. The layer structure is considered
with thickness and optical functions in the model throughout this procedure. The relative
phase shift is determined and compared to measured quantities during a numerical
regression procedure.
Features
Noncontact and nondestructive optical measurements can be executed on:
Multilayer samples
Single layer
Substrates
Obtained parameters: thin film thickness and optical properties
Applications
Porous layer
Photovoltaics
Bio
Laser diode
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Semiconductor
Organic
Optics
Lighting
Measurement Modes
Transmission Ellipsometry for transparent substrates
Generalized Ellipsometry for Anisotropic materials
Spectroscopic Ellipsometry for thin film thickness and optical functions, including
complex multilayer structures
Porosimetry: Measurements of pore size and porosity in thin films
Polarimetry
Reflectance & Transmittance vs. wavelength and incidence angle
Insitu measurement mode for real time control during deposition or etch process
Scatterometry vs. wavelength and angle of incidence
Mueller Matrix (11 or 16 elements) uniquely offered in combination with
Scatterometry for 3D anisotropic materials
Jones Matrix for simple anisotropic materials
This information has been sourced, reviewed and adapted from materials provided by
Semilab.
For more information on this source, please visit Semilab.
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