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    Description: Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector

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    crackintheshat
    The 2N5322 and 2N5323 are silicon PNP transistors intended for high voltage, medium power applications. They are in a JEDEC TO-39 metal case. The 2N5322 can withstand a collector-emitter voltage of -100V and the 2N5323 can withstand -75V. Both have a continuous collector current rating of -2A and a total power dissipation of 1W at 25°C case temperature. They provide key electrical characteristics for switching and amplification applications.

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    Description: Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector

    Uploaded by

    crackintheshat
    31 views3 pages
    The 2N5322 and 2N5323 are silicon PNP transistors intended for high voltage, medium power applications. They are in a JEDEC TO-39 metal case. The 2N5322 can withstand a collector-emitter voltage of -100V and the 2N5323 can withstand -75V. Both have a continuous collector current rating of -2A and a total power dissipation of 1W at 25°C case temperature. They provide key electrical characteristics for switching and amplification applications.

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    datasheet

    Original Title

    2N5322_23

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    The 2N5322 and 2N5323 are silicon PNP transistors intended for high voltage, medium power applications. They are in a JEDEC TO-39 metal case. The 2N5322 can withstand a collector-emitter voltage of -100V and the 2N5323 can withstand -75V. Both have a continuous collector current rating of -2A and a total power dissipation of 1W at 25°C case temperature. They provide key electrical characteristics for switching and amplification applications.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    31 views3 pages

    Description: Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector

    Uploaded by

    crackintheshat
    The 2N5322 and 2N5323 are silicon PNP transistors intended for high voltage, medium power applications. They are in a JEDEC TO-39 metal case. The 2N5322 can withstand a collector-emitter voltage of -100V and the 2N5323 can withstand -75V. Both have a continuous collector current rating of -2A and a total power dissipation of 1W at 25°C case temperature. They provide key electrical characteristics for switching and amplification applications.

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    of 3

    2N5322

    2N5323

    MECHANICAL DATA
    Dimensions in mm (inches) HIGH SPEED
    8 .8 9 (0 .3 5 )
    9 .4 0 (0 .3 7 )
    MEDIUM VOLTAGE
    7 .7 5 (0 .3 0 5 )
    8 .5 1 (0 .3 3 5 )

    SWITCHES
    6 .1 0 (0 .2 4 0 )
    6 .6 0 (0 .2 6 0 )

    1 2 .7 0
    0 .8 9 m a x .
    (0 .0 3 5 )
    DESCRIPTION
    (0 .5 0 0 )
    m in . 7 .7 5 (0 .3 0 5 )
    8 .5 1 (0 .3 3 5 )
    d ia .
    The 2N5322 and 2n5323 are silicon planar
    expitaxial PNP transistors in jedec TO-39
    5 .0 8 (0 .2 0 0 )
    metal case intended for high voltage medi-
    ty p .

    um power applications in industrial and


    2
    2 .5 4
    (0 .1 0 0 )
    commercial equipment.
    1 3
    0 .6 6 (0 .0 2 6 )
    The complementary NPN types are the
    1 .1 4 (0 .0 4 5 )

    0 .7 1 (0 .0 2 8 )
    0 .8 6 (0 .0 3 4 )
    2N5320 and 2N5321 respectively

    4 5 °

    TO-39
    Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector

    ABSOLUTE MAXIMUM RATINGS


    TCASE = 25°c unless otherwise stated 2N5322 2N5323
    VCBO Collector – Base Voltage (IE = 0) -100V -75V
    VCEV Collector – Emitter Voltage (VBE = 1.5v) -100V -75V
    VCEO Emitter – Base Voltage (IB = 0) -75V -50V
    VEBO Emitter – Base Voltage (IC = 0) -6V -5V
    IC Continuous Collector Current -2A
    IB Base Current -1A
    Ptot Total Dissipation at Tamb = 25°C 1W
    Tcase = 50°C 10W
    Tstg,Tj Storage and Junction temperature –65 to +200°C

    THERMAL DATA
    Rthj-case Thermal Resistance Junction-case Max 17.5 °C/W
    Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W

    Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.


    Prelim. 7/99
    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
    2N5322
    2N5323

    ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated)


    Parameter Test Conditions Min. Typ. Max. Unit
    VCB = -80V IE = 0 2N5322 -0.5
    ICBO Collector Cut Off Current µA
    VCB = -60V IE = 0 2N5323 -5
    VEB = -5V IC = 0 2N5322 -0.1
    IEBO Emitter Cut Off Current µA
    VEB = -4V IC = 0 2N5323 -0.5
    VBE = 1.5V IC = -0.1mA
    V(BR)CEV Collector Emitter Breakdown Voltage 2N5322 -100
    V
    2N5323 -75
    IC = -10mA IB = 0
    VCEO(SUS)* Collector Emitter Saturation Voltage 2N5322 -75
    pF
    2N5323 -50
    IE = -0.1mA IC = 0
    V(BR)EBO Emitter Base Breakdown Voltage 2N5322 -6
    V
    2N5323 -5
    IC = -500mA IB = -50mA
    VCE(sat)* Collector Emitter Saturation Voltage 2N5322 -0.7
    V
    2N5323 -1.2
    IC = -500mA VCE = -4V
    VBE* Base Emitter Voltage 2N5322 -1.1
    V
    2N5323 -1.4
    IC = -500mA VCE = -4V 30 130
    IC = -1A VCE = -2V 10
    hFE* DC Current Gain 2N5322 —
    IC = -500mA VCE = -4V 40 250
    2N5323
    fT Transistion Frequency IC = -50mA VCE = -4V 50 MHz
    IC = -500mA VCC = -30V
    ton Turn-On Time 100
    IB1 = -50mA
    ns
    IC = -500mA VCC = -30V
    toff Turn Off Time 1000
    IB1=-IB2 = -50mA

    * Pulse test tp = 300ms , d = 1 %

    Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.


    Prelim. 7/99
    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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