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    Power IGBT: Insulated Gate Bipolar Transistor

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    chiyan chiyan
    The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a bipolar junction transistor and MOSFET, allowing it to have high input impedance like a MOSFET but lower power losses than a BJT. The document outlines the construction, characteristics, and ratings of the IGBT, noting it can switch at frequencies up to 10 kHz. Finally, the document lists some common applications of IGBTs, such as inverters, UPS systems, motor drives, and power supplies.

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    Power IGBT: Insulated Gate Bipolar Transistor

    Uploaded by

    chiyan chiyan
    40 views12 pages
    The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a bipolar junction transistor and MOSFET, allowing it to have high input impedance like a MOSFET but lower power losses than a BJT. The document outlines the construction, characteristics, and ratings of the IGBT, noting it can switch at frequencies up to 10 kHz. Finally, the document lists some common applications of IGBTs, such as inverters, UPS systems, motor drives, and power supplies.

    Original Description:

    Electrical

    Original Title

    Power Mosfet

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    The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a bipolar junction transistor and MOSFET, allowing it to have high input impedance like a MOSFET but lower power losses than a BJT. The document outlines the construction, characteristics, and ratings of the IGBT, noting it can switch at frequencies up to 10 kHz. Finally, the document lists some common applications of IGBTs, such as inverters, UPS systems, motor drives, and power supplies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views12 pages

    Power IGBT: Insulated Gate Bipolar Transistor

    Uploaded by

    chiyan chiyan
    The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a bipolar junction transistor and MOSFET, allowing it to have high input impedance like a MOSFET but lower power losses than a BJT. The document outlines the construction, characteristics, and ratings of the IGBT, noting it can switch at frequencies up to 10 kHz. Finally, the document lists some common applications of IGBTs, such as inverters, UPS systems, motor drives, and power supplies.

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    Power IGBT

    Insulated Gate Bipolar Transistor


    Evocation

    Comparison of Power BJT and MOSFET


     Switching Frequency

     Conduction Loss

     Unipolar and Bipolar device

     Temperature

     secondary breakdown
    Evocation
    Introduction
     IGBT is a combination of BJT and MOSFET.

     It is a voltage controlled device and requires only a


    small input current.

     IGBT has high input impedance like a MOSFET and a


    low on state power loss as in a BJT.

     IGBT is free from secondary breakdown.

     It is widely used in medium power applications.


    Constructional Features of a Power IGBT
    IGBT Symbol
    Characteristics for IGBT
    Switching characteristics of a IGBT
    Ratings of Power IGBT

     Voltage rating-1200V

     Current rating-400 A

     Switching Frequency upto10 kHz

     Turn on time-<1µs

     Turn off time-2 µs


    Applications
     Medium Power applications

     UPS systems

     Inverters

     Power supplies for solenoids, relays and contactors.

     Switched mode Power supplies

     AC and DC motor drives


    Summary
     Construction
     Operation : VI and switching characteristics
     MOSFET – High switching frequency
     IGBT – Medium switching frequency
     Applications : High switching frequency,
    Inverters, UPS, Converters, Chopper

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