Scribd Logo
Upload

Welcome to Scribd!

  • 55 views

    SKKT 323-12e

    Uploaded by

    Parvez
    This document provides specifications for an industrial thyristor module. It details maximum ratings, characteristics, features, and applications for the SKKT 323/12 E thyristor module. The document includes descriptions of the module and chip components as well as various graphs depicting performance parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    SKKT 323-12e

    Uploaded by

    Parvez
    55 views4 pages
    This document provides specifications for an industrial thyristor module. It details maximum ratings, characteristics, features, and applications for the SKKT 323/12 E thyristor module. The document includes descriptions of the module and chip components as well as various graphs depicting performance parameters.

    Original Description:

    Semikron Thyristor Module Datasheet. SKKT_323-12E

    Original Title

    SKKT_323-12E

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an industrial thyristor module. It details maximum ratings, characteristics, features, and applications for the SKKT 323/12 E thyristor module. The document includes descriptions of the module and chip components as well as various graphs depicting performance parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    55 views4 pages

    SKKT 323-12e

    Uploaded by

    Parvez
    This document provides specifications for an industrial thyristor module. It details maximum ratings, characteristics, features, and applications for the SKKT 323/12 E thyristor module. The document includes descriptions of the module and chip components as well as various graphs depicting performance parameters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 4

    SKKT 323/12 E

    Absolute Maximum Ratings


    Symbol Conditions Values Unit
    Chip
    IT(AV) Tc = 85 °C 320 A
    sinus 180°
    Tc = 100 °C 241 A
    ITSM Tj = 25 °C 9500 A
    10 ms
    Tj = 130 °C 8200 A
    i2t Tj = 25 °C 451250 A²s
    10 ms
    Tj = 130 °C 336200 A²s
    SEMIPACK® 3 VRSM 1300 V
    VRRM 1200 V
    VDRM 1200 V
    Thyristor Modules (di/dt)cr Tj = 130 °C 130 A/µs
    (dv/dt)cr Tj = 130 °C 1000 V/µs
    Tj -40 ... 130 °C
    SKKT 323/12 E
    Module
    Tstg -40 ... 125 °C
    Features Visol 1 min 3000 V
    a.c.; 50 Hz; r.m.s.
    • Industrial standard package 1s 3600 V
    • Electrically insulated base plate
    • Heat transfer through aluminum oxide Characteristics
    ceramic insulated metal base plate
    • Chip soldered on direct copper bonded Symbol Conditions min. typ. max. Unit
    Al2O3 ceramic Chip
    • Thyristor with center gate
    VT Tj = 25 °C, IT = 750 A 1.45 V
    • UL recognition applied for file no.
    E63532 VT(TO) Tj = 130 °C 0.81 V
    rT Tj = 130 °C 0.85 m
    Typical Applications*
    IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM 100 mA
    • DC motor control (e. g. for machine
    tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs
    tools)
    • Temperature control (e. g. for ovens, tgr VD = 0.67 * VDRM 2 µs
    chemical processes) tq Tj = 130 °C 150 µs
    • Professional light dimming (studios, IH Tj = 25 °C 150 500 mA
    theaters)
    IL Tj = 25 °C, RG = 33  300 2000 mA
    VGT Tj = 25 °C, d.c. 2 V
    IGT Tj = 25 °C, d.c. 150 mA
    VGD Tj = 130 °C, d.c. 0.25 V
    IGD Tj = 130 °C, d.c. 10 mA
    Rth(j-c) per chip 0.091 K/W
    cont.
    per module 0.0455 K/W
    Rth(j-c) per chip 0.095 K/W
    sin. 180°
    per module 0.048 K/W
    Rth(j-c) per chip 0.11 K/W
    rec. 120°
    per module 0.055 K/W
    Module
    Rth(c-s) chip 0.08 K/W
    module 0.04 K/W
    Ms to heatsink M5 4.25 5.75 Nm
    Mt to heatsink M8 7.65 10.34 Nm
    a 5 * 9,81 m/s²
    w 410 g

    SKKT

    © by SEMIKRON Rev. 3 – 17.05.2013 1


    SKKT 323/12 E

    Fig. 1L: Power dissipation per thyristor/diode vs. on-state Fig. 1R: Power dissipation per thyristor/diode vs.
    current ambient temperature

    Fig. 2R: Power dissipation of one module vs. case


    Fig. 2L: Power dissipation of one module vs. rms current
    temperature

    Fig. 3L: Power dissipation of two modules vs. direct Fig. 3R: Power dissipation of two modules vs. case
    current temperature

    2 Rev. 3 – 17.05.2013 © by SEMIKRON


    SKKT 323/12 E

    Fig. 4L: Power dissipation of three modules vs. direct and Fig. 4R: Power dissipation of three modules vs. case
    rms current temperature

    Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time

    Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time

    © by SEMIKRON Rev. 3 – 17.05.2013 3


    SKKT 323/12 E

    Fig. 9: Gate trigger characteristics

    SKKT

    SEMIPACK 3

    This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

    * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
    for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
    subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

    4 Rev. 3 – 17.05.2013 © by SEMIKRON

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy