DISCRETE SEMICONDUCTORS

DATA SHEET

BLT53
UHF power transistor
Product specification May 1991
Philips Semiconductors Product specification

UHF power transistor BLT53

FEATURES QUICK REFERENCE DATA

• Emitter-ballasting resistors for an RF performance at Tmb = 25 °C in a common emitter test circuit.
optimum temperature profile MODE OF f VCE PL Gp ηc
• Gold metallization ensures OPERATION (MHz) (V) (W) (dB) (%)
excellent reliability c.w. class-B 470 7.5 8 > 6 > 60
• Withstands full load mismatch.
WARNING
DESCRIPTION
Product and environmental safety - toxic materials
NPN silicon planar epitaxial transistor
This product contains beryllium oxide. The product is entirely safe provided
encapsulated in a 4-lead SOT122D
that the BeO disc is not damaged. All persons who handle, use or dispose of
studless envelope with a ceramic cap.
this product should be aware of its nature and of the necessary safety
It is designed for common emitter,
precautions. After use, dispose of as chemical or special waste according to
class-B operation in portable radio
the regulations applying at the location of the user. It must never be thrown
transmitters in the 470 MHz
out with the general or domestic waste.
communications band. All leads are
isolated from the mounting flange.
PIN CONFIGURATION
PINNING - SOT122D

PIN DESCRIPTION
halfpage 4
1 collector
2 emitter
c
3 base 1 3
handbook, halfpage

4 emitter b

MBB012 e

2
MSB055

Fig.1 Simplified outline and symbol.

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Philips Semiconductors Product specification

UHF power transistor BLT53

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage open base − 10 V
VEBO emitter-base voltage open collector − 3 V
IC, IC(AV) collector current DC or average value − 2.5 A
ICM collector current peak value − 7.5 A
f > 1 MHz
Ptot total power dissipation RF operation; − 35.5 W
Tmb = 25 °C
Tstg storage temperature range −65 150 °C
Tj junction operating temperature − 200 °C

MCD192 MCD193
10
handbook, halfpage
50
handbook, halfpage
Ptot
(W) (3)
IC
(A) 40
Tmb = 25 oC (2)

70 oC
30 (1)

20

10

10−1 0
1 10 102 0 40 80 120 160
VCE (V) Tmb (oC)

(1) Continuous DC operation.

(2) Continuous RF operation (f > 1 MHz).
(3) Short time operation during mismatch (f > 1 MHz).

Fig.2 DC SOAR. Fig.3 Power derating curve.

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Rth j-mb(RF) from junction to mounting base Ptot = 35.5 W; 4.9 K/W
Tmb = 25 °C

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Philips Semiconductors Product specification

UHF power transistor BLT53

CHARACTERISTICS
Tj = 25 °C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; 20 − − V
IC = 20 mA
V(BR)CEO collector-emitter breakdown voltage open base; 10 − − V
IC = 40 mA
V(BR)EBO emitter-base breakdown voltage open collector; 3 − − V
IE = 4 mA
ICES collector-emitter leakage current VBE = 0; − − 1 mA
VCE = 10 V
hFE DC current gain VCE = 5 V; 25 − −
IC = 1.2 A
fT transition frequency VCE = 7.5 V; − 3.9 − GHz
IE = 1.6 A
Cc collector capacitance VCB = 7.5 V; − 24 − pF
IE = Ie = 0;
f = 1 MHz
Cre feedback capacitance VCE = 7.5 V; − 17 − pF
IC = 0;
f = 1 MHz
Cc-mb collector-mounting base capacitance f = 1 MHz − 1.2 − pF

MCD194 MCD195
handbook,80
halfpage handbook,50
halfpage
Cc
hFE (pF)
40
60

30

40

20

20
10

0 0
0 2 4 6 0 4 8 12
IC (A) VCB (V)

VCE = 5 V. IE = ie = 0; f = 1 MHz.

Fig.4 DC current gain as a function of collector Fig.5 Collector capacitance as a function of

current, typical values. collector-base voltage, typical values.

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Philips Semiconductors Product specification

UHF power transistor BLT53

MCD196
5
handbook, halfpage
fT
(GHz)
4

0
0 2 4 6
IE (A)

VCB = 7.5 V.

Fig.6 Transition frequency as a function of emitter

current, typical values.

May 1991 5
Philips Semiconductors Product specification

UHF power transistor BLT53

APPLICATION INFORMATION
RF performance at Tmb = 25 °C in a common emitter test circuit.

MODE OF f VCE PL Gp ηc
OPERATION (MHz) (V) (W) (dB) (%)
c.w. class-B 470 7.5 8 > 6 > 60
typ. 6.8 typ. 65

MCD197 MCD198
10
handbook, halfpage
70 handbook,12
halfpage
η
Gp η
(dB) (%) PL
(W)
8 60
Gp

8
6 50

4 40
4

2 30

0 20 0
0 4 8 12 0 1 2 3 4
PL (W) PD (W)

Class-B operation; VCE = 7.5 V; f = 470 MHz. Class-B operation; VCE = 7.5 V; f = 470 MHz.

Fig.7 Gain and efficiency as functions of load Fig.8 Load power as a function of drive power,
power, typical values. typical values.

Ruggedness in class-B operation

The BLT53 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, and
f = 470 MHz.

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Philips Semiconductors Product specification

UHF power transistor BLT53

handbook, full pagewidth input

C2

,,
L1
T.U.T.
,, L4 C7
output

ZS = 50 Ω C1 R1 L3 C8 ZL = 50 Ω
C3 C4
L2
C5

R2 C6
MBH107

L5

+VCC

Fig.9 Class-B test circuit at f = 470 MHz.

List of components (see test circuit)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C7, C8 film dielectric trimmer 2 to 9 pF 2222 809 09002
C3, C4 multilayer ceramic chip capacitor 15 pF
C5 feed-through capacitor 100 pF
C6 polyester capacitor 33 nF
L1 stripline (note 1) 44 Ω 41.1 mm × 5 mm
L2 13 turns closely wound enamelled 320 nH int. dia. 4 mm
0.5 mm copper wire
L3 2 turns enamelled 1 mm copper wire int. dia. 4 mm;
pitch 1.5 mm;
leads 2 × 5 mm
L4 stripline (note 1) 44 Ω 52.7 mm × 5 mm
L5 grade 3B1 Ferroxcube wideband HF 4312 020 36640
choke
R1 0.25 W carbon resistor 1 Ω, 5%
R2 0.25 W carbon resistor 10 Ω, 5%

Note
1. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.74);
thickness 1⁄16 inch.

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Philips Semiconductors Product specification

UHF power transistor BLT53

handbook, full pagewidth 146

41.1 52.7

rivet (4x)

47

L2
input output
R1 C3
50 Ω C1 50 Ω
C7
L1 L4

C2 C6
C4 C8
L3
C5 R2
VCC
L5

MBH108

The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of hollow rivets.
Dimensions in mm.

Fig.10 Component layout for 470 MHz class-B test circuit.

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Philips Semiconductors Product specification

UHF power transistor BLT53

MCD199 MCD200
3
handbook, halfpage 4
handbook, halfpage
ri RL
ZL
Zi
(Ω)
(Ω)
2
2

1
xi XL
−2

0 −4
400 440 480 520 400 440 480 520
f (MHz) f (MHz)

Class-B operation; VCE = 7.5 V; PL = 8 W. Class-B operation; VCE = 7.5 V; PL = 8 W.

Fig.11 Input impedance (series components) as a Fig.12 Load impedance (series components) as a
function of frequency, typical values. function of frequency, typical values.

MCD201
handbook,10
halfpage
Gp
(dB)
8

handbook, halfpage
4

Zi 2
ZL MBA451

0
400 440 480 520
f (MHz)

Class-B operation; VCE = 7.5 V; PL = 8 W.

Fig.13 Definition of transistor impedance. Fig.14 Power gain as a function of frequency,

typical values.

May 1991 9
Philips Semiconductors Product specification

UHF power transistor BLT53

PACKAGE OUTLINE

Studless ceramic package; 4 leads SOT122D

A
Q
c
D2

H
b

4 α
L

0 5 10 mm
scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D2 H L Q α

4.17 5.85 0.18 7.50 7.24 27.56 9.91 1.58

mm 90°
3.27 5.58 0.14 7.23 6.98 25.78 9.14 1.27

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT122D 97-04-18

May 1991 10
Philips Semiconductors Product specification

UHF power transistor BLT53

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

May 1991 11
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