1984 GE Optoelectronics Data Library 3ed PDF

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OPTOELECTRONICS

General Electric Company
Auburn, NY 13021
GENERAL e ELECTRIC
Optoelectronics manual, Third Edition:
Editors Contributing Authors
William H. Sahm 11/ Denis R. Grafham
Marvin W. Smith William H. Sahm 11/
The Power Electronics Semiconductor Department of General
Electric Company acknowledges the efforts of all the contributing
authors and editors of the prior editions of the General Electric
Optoelectronics manual.
The circuit diagrams included in this manual are intended merely for illustration of
typical semiconductor applications and are not intended as constructional information.
Although reasonable care has been taken in their preparation to assure their technical
correctness, in the absence of an express written agreement to the contrary, no .re-
sponsibility is assumed by the General Electric Company for any consequences of their
use:
The semiconductor products, circuits, and arrangements disclosed herein may be
covered by patents of General Electric Company or others. Neither the disclosure of
any information herein nor the sale of semiconductor products by General Electric
Company conveys any license under patent claims covering combinations of semicon-
ductor products with other products or elements. In the absence of an express written
agreement to the contrary, General Electric Company assumes no liability for patent
infringement arising out of any use of semiconductor products with other products or
elements by any purchaser of semiconductor products, or by others.
3rdEdition
Copyright4' 1984
by the
General Electric Company, U. S.A.
Auburn, New York 13021
4
INTRODUCTION
Optoelectronics, based on semiconductor mass production technology, is strongly influencing the
design of electronic control circuitry. Optoelectronic components sense the presence and intensity of
light, the position of objects which break or reflect a light beam, and transmit electronic signals without
electrical connections. This provides high speed and high reliability at low cost for a variety of useful
functions, from automatic light level control in copy machines, or sensing the right instant to fire an
automobile's spark plug, to allowing delicate computer circuitry to control high power machine tools by
interfacing logic signals to the power line circuitry without allowing line voltages and noise to interfere
with the logic.
General Electric, a leader in both optoelectronics and semiconductor technology, has contributed
significantly to optoelectronics starting from the invention of the light emitting diode and the first
commercially successful light activated silicon controlled rectifier. Today General Electric can offer
the broadest line of optoelectronic circuit components in the industry. This manual is written to provide
the circuit d~signer with a knowledge of the operation, interfacing, and detailed application of these
components so he may successfully design practical, cost effective, and reliable circuitry. It also
provides the specification sheets, selection guides and cross-reference information needed to choose the
optimum device for a specific task.
This manual contains separate chapters on application information. The applications chapters
dis1cuss basic devices and their operation, and circuit and system design interfacing the devices.
Reliability and life considerations are covered and the discussion is completed with circuit designs
grouped by function. In addition to the table of contents and organization of material, a comprehensive
index to the application information and a glossary of terms allows' 'instant recall" of information as
required. Since not all questions can be answered in the space provided, a list of further reference
material is included.
5
TABLE OF CONTENTS
GUIDE TO SPECIFICATIONS •..•..•.•..•.• , •..•.•••....•••.•.••••••...•.....••..••.• '. . • . • • . 8
1. OPTOELECTRONIC THEORY
1.1 Devices
1.1.1 Light Sources. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 13
1.1.2 Light Detectors ...•.......................................................... , 15
1.2 Components
1.2.1 Detectors and Emitters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 22
1.2.2 FiberOptics .... ',' . . .. . . . . . . . . .. . .. . . . . .. .. . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. 23
1.2.3 Interrupter/Reflector Modules .................................................. 24
1.2.4 Optocouplers .............................................................. " 25
2. SYSTEMS DESIGN CONSIDERATIONS

2.1 Emitter and Detector Systems
2.1.1 Light Irradiance and Effectiveness ... .. .. .. . . . . .. . . . . . . . . . .. . . . . . . . . .. . . . . . . . . . .. 29
2.1.2 Lenses and Reflectors ..................... '................... ~ . . . . . . . . . . . . . . .. 35
2.1.3 Ambient Light ............ '...................................... :.......... .. 37
2.1.4 Pulsed Systems .............................................................. 37
2.1.5 Precision Position Sensing.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 38
2.2 Optocoupler Systems
2.2.1 Isolation ................ " ... '. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 43
2.2.2 Input, Output, and ThmsferCharacteristics. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . ... . .. . .. 47
3. RELIABILITY OF OPTOELECTRONIC COMPONENTS

3.1 Quality and Reliability Costs. . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 75
3.2 SummaryofTestResults ...... \... ....... ....... ...... ............. .. ... ........... 77
3.3 Reliability Prediction of Circuits Containing IRED's ......... , ............... , . . . . . . . .. 81
3.4 Reliability Prediction in Application. . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .. 88
3.5 Reliability Enhancement ofOptoisolators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. 90
3.5.1. Data Summary '........................................ , ..................... " 95
4. MEASUREMENT OF OPTOELECTRONIC DEVICE PARAMETERS

4.1 IRED Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 97
4.2 Photodetector Parameters ........ '........... , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 98
4.3 Optocoupler Measurements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 99
5. SAFETY
5.1 Reliability and Safety .......................................................... , .. 103
5.2 Safety Standards Recognition . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. . . . . . . . . .. . .. . . .. .. 103
5.3 Possible Hazards ................ '. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 104
6
6. OPTOELECTRONIC CIRCUITS
6.1 Light Detecting Circuits ........... , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 105
6.2 Detecting Objects With Light ...................................................... 111
6.3 Transmitting Information With Light
6.3.1 Analog Information ........................................................... 116
6.3.2 Digital Information ........................................................... 122
6.3,3 Telecommunications Circuits ................................................... 124
6.4 Optoisolator Switching Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 129
6.5 Power Control Circuits
6.5.1 AC Solid State Relays ......................................................... 131
6.5.2 DC Solid State Relays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 146
6.5.3 Other Power Control Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .. 148
1. GLOSSARY OF SYMBOLS AND TERMS ..................................................... " 155
8. BIBLIOGRAPHY AND REFERENCES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .. 163
9. OPTOELECTRONIC SPECIFICATIONS
Emitter Specifications' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 164
Detector Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . •. . . . . . . . . . . . . . . . . .. 180
Fiber Optics Specifications . . . . . . . . . .. . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 194
Optoisolator Specifications .. . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 200
Module Specifications ................................................................. 278
European "Pro Electron" Registered Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 310
Generic Optoisolator Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 350
Cross Reference of Competitive Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 374
INDEX . ................................................................................ 381
7
OPTOELECTRONICS SPECIFICATIONS
GUIDE TO SPECIFICATIONS
INFRARED EMITTERS
MIN. MAX. PEAK EMISSION RISE FALL MAX. MAX. IF
PAGE CDrn.
GETYPE NO. PO@ VF@ WAVELENGTH TIME TIME PD PKG
IF= 1DOmA IF= tODmA TYP. n METERS TYP. ",SEC TYP.",SEC mW mA
1N6264 164 6.0mW 1.7V 940 1.0 1.0 1300 100 54A
1N6265 164 6.0mW 1.7V 940 1.0 1.0 1300 100 54
1N6266 166 25mW/sr 1.7V 940 1.0 1.0 1300 100 54A
COX14 314 5.4mW _1.7V 940 1.0 1.0 1300 100 54A
COX15 314 5.4mW 1.7V 940 1.0 1.0, 1300 100 54
COX16 314 1.5mW 1.7V 940 1.0 1.0 1300 100 54A
COX17 314 1.5mW 1.7V 940 1.0 1.0 1300, 100 54
F5D1 170 12mW l.7V 880 1.5 1.5 1300 100 54A
F5D2 170 9mW 1.7V 880 1.5 1.5 1300 100 54A
F5D3 170 1O.5mW 1.7V 880 1.5 1.5 1300 100 54A
F5E1 170 12mW 1.7V 880 1.5 1.5 1300 100 54
F5E2 170 9mW 1.7V 880 1.5 1.5 1300 100 54
F5E3 170 1O.5mW 1.7V 880 1.5 1.5 1300 100 54
F5F1 174 .28mW/sr 1.7V 940 1.0 1.0 100 60 56
F5G1 176 .6mWisr 1.85V 880 1.5 1.5 100 50 56
LED55C 178 5.4mW 1.7V 940 1.0 1.0 1300 100 54A
LED55B 178 3.5mW 1.7V 940 1.0 1.0 1300 100 54A
LED56 178 1.5mW l.7V 940 1.0 1.0 1300 100 54A
LED55CF 178 5.4mW l.7V '940 1.0 1.0 1300 100 54
LED55BF 178 3.5mW 1.7V 940 1.0 1.0 1300 100 54
LED56F 178 1.5mW 1.7V 940 1.0 1.0 1300 100 54
DETECTORS
PHOTO TRANSISTORS
If
SENSITIVITY Ima/mw/cm 21 SWITCHING TYP. TYP.
GETYPE PAGE BVCEO BVCBO IDlnAI PKG
NO. MIN. MAX. IVI IVI MAX. trl",SECI t,I",SEC) VCEISAT)
BPW38 310 .6 - 45 45 100 5 5 .4 55
BPW37 310 .3 - 45 45 100 5 5 .4 55
L14C1 180 .1 - 50 - 50 100 5 5 .2 57
L14C2 180 .05 - 50 50 100 5 5 .2 57
,.
L14G1 184 .6 - 45 45 100 5 5 .4 55
L14G2 184 .3 - 45 45 100 5 ,5 .4 55
L14G3 184 1.2 - 45 45 100 5 5 .4 55
L14N1 186 .6 - 30 40 100 10 14 .4 57
L14N2 186 1.2 - 30 40 100 12 16 .4 57
L14P1 188 4.0 - 30 40 100 10 14 .4 55
L14P2 188 8.0 - 30 40 100 12 16 .4 55
L1401 190 .2 - 30 - 100 8ton 50t0ff .4 56
PHOTO DARLINGTONS
SENSITIVITY Ima/mw/cm2) SWITCHING TYP.
GETYPE PAGE BVCEO BVCBO IDlnA) TYP.
NO. MIN. MAX. IV) (V) MAX. - -tr I",SEC) PKG
t,I",SEC)
l
VCEISATI
BPW38 312 15.0 - 25 25 100 75 50 .8 / 55
L14F1 182 15.0 - 25 25 100 75 50 .8 55
L14F2 182 5.0 - 25 - 25 100 75 50 .8 55
L14R1 192 5.0 - 30 - 100 45ton 250t0ff .9 56
8
PHOTON COUPLED INTERRUPTER MODULE
PHOTO TRANSISTOR OUTPUT
PAGE TYPICAL
GETYPE OUTPUT CURREIT ICED BVCEO VCEirATI PKG
NO. InAI IVI TONII'SECI tfll'SEC) M X.
H21A1 278 ip=20mA 1.0mA 100 30 8 50 .4 319
H21A2 278 ip=20mA 2.0mA 100 30 8 50 .4 319
H21A3 278 ip=20rnA 4.0mA 100 30 8 50 .4 319 319
H21A4 280 ip=20rnA LOrnA 100 55 8 50 .4 319
H21A5 280 Ip=20mA 2.0mA 100 55 8 50 .4 319
H21A6 280 ip=20rnA 4.0mA 100 55 8 50 .4 319
H22A1 288 ip=20mA 1.0mA 100 30 8 50 .4 320
H22A2 288 ip=20mA 2.0mA 100 30 8 50 .4 320
H22A3 288 ip=20mA 4.0rnA 100 30 8 50 .4 320
H22A4 290 Ip=20rnA LOrnA 100 55 8 50 .4 320
H22A5 290 Ip=20mA 2.0mA 100 55 8 50 .4 320
H22AB 290 ip=20rnA 4.0rnA 100 55 8 50 .4 320
CNY2B 322 ip=20mA 200/LA 100 30 5 5 .4 319
CNY36 340 ip=20mA 200I'A 100 30 5 5 .4 320
PHOTO DARLINGTON OUTPUT

H21B1 282 Ip=IOrnA 7.5mA 100 30 45 250 1.0 319
H21B2 282 ip=lOmA 14mA 100 30 45 250 1.0 319
H21B3 282 Ip=lOmA 25mA 100 30 45 250 1.0 319
H21B4 284 Ip=IOrnA 7.5mA 100 55 45 250 1.0 319
H21B5 284 Ip=IOrnA 14mA 100 55 45 250 1.0 319
H21B6 284 Ip=lOmA 25mA 100 55 45 250 1.0 319
H22B1 292 Ip=lOmA 7.5mA 100 .30 45 250 1.0 320
H22B2 292 Ip=lOmA 14mA 100 30 45 250 1.0 320
H22B3 292 Ip=lOmA 25mA 100 30 45 250 1.0 320
H22B4 294 Ip=lOmA 7.5mA 100 55 45 250 1.0 320 320
H22B5 294 Ip=lOmA 14mA 100 55 45 250 1.0 320
H22B6 294 Ip=lOrnA 25mA 100 55 45 250 1.0 320
CNY29 324 Ip=20mA 2.5mA 100 25 150 150 1.2 319
SCHMITT TRIGGER OUTPUT

TURN ON HYSTERESIS OPERATING
GETYPE PAGE CURRENT 10FF/lION) OUTPUT VOLTAGE
110. RATIO VOL VOLTAGE PKG
I~ON).
AX. MIN. MAX. MAX. MIN. MAX.
H21L1 286 . 30rnA .5 .9 .4V 4V 15V 319
H21L2 286 15mA .5 .9 .4V 4V 15V 319
H22L1 296 30mA .5 .9 .4V 4V 15V 320
H22L2 296 15mA .5 .9 .4V 4V 15V 320
MATCHED EMITTER DETECTQR PAIRS


IH23B1 I 300 IIp= 10mA I 7.5mA 100 30 45 250 1.0 I 321 I
. TURNON HYSTERESIS
PAGE CURRENT OUTPUTVOLTAGE OPERATING
GETYPE 10FF/IION)
NO. RATIO VOL VOLTAGE PKG
I~ONI.
AX. MIN. MAX. MAX. MIN. MAX.
H23L1 302 20mA .5 .9 .4V 4V 15V 321
9
FIBER OPTIC DEVICES
PHOTO TRANSISTORS DETECTORS
PAGE RESPONSIBILITY BVCEO PKG
GETYPE NO. IV) ICEo(nAI
fLA/fLW
GFoD1A1 194 70 30 100 322
GFoD1A2 194 30 30 100
PHOTO DARLINGTONS
GFoD1B1 1000 30 100
GFoD1B2 500 30 100
322
EMITTERS
PAGE FIBER POWER PEAK EMISS.ION

GETYPE V VF@IF=5OmA WAVELENGTH PKG
NO. OUTPUT fLW
nm
GFoE1A1 198 100 6 l.7V 940 322
GFoE1A2 198 60 6 l.7V 940
OPTO COUPLERS
ISOLATION CURRENT TYpiCAL

295 . PAGE ICEolnAI BVCEO (p.SEC)
GETYPE VOLTAGE (Vpkl TRANSFER IVOLTSI VCEk'ATI PKG
NO. MAX. M X.
MIN. RATIO MIN. MIN. tr tf
'UUf CNY17
CNY17
CNY17
. CNY17
I
II
III
IV
318
318
318
318
5000
5000
5000
5000
40-80%
63-125%
100-200%
160-320%
50
50
50
50
70
70
70
70
2
2
2
2
2
2
2
2
.3
.3
.3
.3
296
296
296
296
CNY32 332 4000VRMS 20% 100 30 3 3 .4 297
CNY47 342 2800 20-60% 100 30 2 2 .4 296
CNY47A 342 2800 40% 100 30 2 2 .4 296
CNY51 346 5656 100% 50 70 2 2 .4 296
GEPS2001 354 2500 30% 100 30 5 5 .3 296
296 GFH600 I 356 2800VRMS 63-125% 50 70 5 5 .3 296
GFH600 II 356 2800VRMS 100-200% 50 70 5 5 .3 296
~
GFH600 III 356 2800VRMS 160-320% 50 70 5 5 .3 296
GFH601 I 360 5300 40"80% 50 70 5 5 .4 296
GFH601 II 360 5300 63-125% 50 70 5 5 .4 296
GFH601 III 360 5300 100-200% 50 70 5 5 .4 296
GFH601 IV 360 5300 160-320% ·50 70 5 5 .4 296
HllA1 ' 214 2500 50% 50 30 2 2 .4 296
Hl1A2 214 1500 20% 50 30 2 2 .4 296
H11A3 216 2500 20% 50 30 2 2 .4 296
Hl1A4 216 1500 10% 50 30 2 2 .4 296
Hl1A5 218 1500 30% 100 30 2 2 .4 296
297 HllA520 224 5656 20% 50 30 2 2 .4 296
Hl1A550 224 5656 50% 50 30 2 2 .4 296
Hl1A51oo 224 5656 100% 50 30 2 2 .4 296
Hl1AGl 234 4000VRMS 300% 50 30 5 5 .4 296
Hl1AG2 234 4000VRMS 200% 50 30 5 5 .4 296
HllAG3 234 2500VRMS 100% 50 30 5 5 .4 296
Hl1AVl 238 4000VRMS 100% 50 70 5 5 .4 296
H11AVIA 238 4000VRMS 100% 50 70 5 5 .4 295
Hl1AV2 238 4000VRMS 50% 50 70 5 5 .4 296
Hl1AV2A 238 4000VRMS 50% 50 70 5 5 .4 295
Hl1AV3 238 4000VRMS 20% 50 70 5 5 .4 296
Hl1AV3A 238 4000VRMS 20% 50 70 5 5 .4 295
H24Al 306 4242VRMS 100% 100 30 3 3 .4 297
H24A2 306 4242VRMS 20% 100 30 3 3 .4 297
4N25 200 2500 20% 50 30 3 3 .5 296
4N25A 200 1775VRMS 20% 50 30 3 3 .5 296
4N26 200 1500 20% 50 30 3 3 .5 296
4N27 200 1500 10% 50 30 3 3 .5 296
4N28 200 500 10% 50 30 3 3 .5 296
4N35 204 2500VRMS 100% 50 30 5 5 .3 296
4N36 204 1750VRMS 100% 50 30 5 5 .3 296
4N37 204 1050VRMS 100% 50 30 5 5 .3 296
H74A1. 228 1500 100 15 296
MCT2 370 1500 20% 50 30 5 5 .4 296
MCTZE . 370 3500 20% 50 30 5 5 .4 296
MCT26 370 1500 6% 50 30 5 5 .4 296
MCT210 372 2500 150% 50 30 5 5 .4 296
10
OPTO COUPLERS (Continued)

TYPICAL
ISOLATION CURRENT BVCEO
GETYPE PAGE VOLTAGE (Vpk) TRANSFER ICED (nA) (VOLTS) IJ"SECI VCEiSAT) PKG
NO. MIN. RATIO MIN. MAX. MIN. M X.
tr tf
H11B1 242 2500 500% 100 25 125 100 1.0 296
H11B2 242 2500 200% 100 25 125 100 1.0 296
H11B3 242 2500 100% 100 25 125 100 1.0 296
H11B255 244 1500 100% 100 55 125 100 1.0 296
H24B1 308 4242VRMS 1000% 100 30 125 100 1.4 297
H24B2 308 4242VRMS 400% 100 30 125 100 1.4 297
4N29 202 2500 100% 100 30 5 40 1.0 296
4N29A 202 1775VRMS 100% 100 30 5 40 1.0 296
.4N30 202 1500 100% 100 30 5 40 1.0 296
4N31 202 1500 50% 100 30 5 40 1.2 296
4N32 202 2500 500% 100 30 5 100 1.0 296
4N32A 202 1775VRMS 500% 100 30 5 10Q 1.0 296
4N33 202 1500 500% 100 30 5 100 1.0 296
CNY31 330 4000VRMS 400% 100 30 125 100 1.4 297
CNY48 344 2120 600% 100 30 125 100 1.0 296
MCA230 364 3550 100% 100 30 5 100 1.0 296
MCA231 364 3550 200% 100 30 5 100 1.0 296
MCA255 364 3550 100% 100 55 5 100 1.0 296
296
HIGH VOLTAGE PHOTO TRANSISTOR OUTPUT
~
H11D1 258 3500 20% 100 300 5 5 .4 296
H11D2 258 2500 20% 100 300 5 5 .4 296
H11D3 258 2500 20% 100 200 5 5 .4 296
H11D4 258 2500 10% 100 200 5 5 .4 296
4N38 208 1500 10% 50 80 5 5 1.0 296
4N38A 208 1775VRMS 10% 50 80 5 5 1.0 296
CNY33 334 2500 20% 100 300 5 5 .4 296 297
HIGH VOLTAGE PHOTO DARLINGTON OUTPUT
ISOLATION CURRENT TYPICAL

PAGE ICEo(nA) BVCEO (ILSEC)
GETYPE VOLTAIU (Vpk) TRANSFER (VOLTS) VCEiSAT) PKG
NO. MIN. MAX. M X.
RATIO MIN. MIN. tr tf
H11G1 264 3535 1000% 100 100 5 100 1.0 296
H11G2 264 3535 1000% 100 80 5 100 1.0 296
H11G3 266 2125 200% 100 55 5 100 1.0 296
H11G45 268 5656 250% 100 55 50 500 1.0 296
H11G46 268 5656 500% 100 55 50 500 1.0 296
PHOTO SCR OUTPUT

PAGE ISOLATION IF TRIGGER ID 100°C BLOCKING TYPICAL
GETYPE (MAX.) VF(MAX.) PKG
NO. VOLTAGE MIN. (MAX·)IL VOLTAGE (MIN.) TON (ILSEC)
H11C1 248 3535 20mA 50 200 1 1.5 296
H11C2 248 2500 20mA 50 200 1 1.5 296
H11C3 248 2500 30mA 50 200 1 1.5 296
H11C4 252 3535 20mA 100 400 1 1.5 296
H11C5 252 2500 20mA 100 400 1 1.5 296
H11C6 252 2500 30mA 100 400 1 1.5 296
4N39 210 1500 14mA 50 200 1 1.5 296
4N40 210 1500 14mA 150 400 1 1.5 296
H74C1 256 2500 200 296
H74C2 256 2500 400 296
CNY30 326 2500 20mA 50 200 1 1.5 296
CNY34 326 2500 20mA 150 400 i 1.5 296
MCS2 366 3550 14mA 50 200 .1 1.5 296
MCS2400 366 3550 14mA 150 400 1 1.5 296
MCS21 368 4000 20mA 50 200 1 1.5 296
MCS2401 368 4000 20mA 100 400 1 1.5 296
11
OPTO COVPLERS (Continued)
TRIAC DRIVER OUTPUT

ISOLATION ON·STATE
BLOCKING LEAKAGE VOLTAGE TYPICAL dvldt
PAGE VOLTAGE IF TRIGGER VOLTAGE CURRENT PKG
GETYPE NO. IRMS) MAX. 146= 100mA) VI/LSEC STATIC
MIN. MAX. MAX.
MIN.
HIIJI 270 4000V 10mA 250V lOOnA 3.0V 2.0 296
H11J2 270 4000V l5mA 250V lOOnA 3.0V 2.0 296
H11J3 270 2500V 10mA 250V lOOnA 3.0V 2.0 296
H11J4 270, 2500V l5mA 250V lOOnA 3.0V 2.0 296
H11J5 270 l500V 25mA 250V lOOnA 3.0V 2.0 296
GE3009 350 4000V 30mA 250V lOOnA 3.0V 6.0 296
GE3010 350 4000V l5rnA 250V 100nA 3.0V 6.0 296
GE3011 350 4000V lOrnA 250V l00nA 3.0V 6.0 296
GE3012 350 4000V 5mA 250V lOOnA 3.0V 6.0 296
GE3020 352 4000V 30mA 400V lOOnA 3.0V 6.0 296
GE3021 352 4000V l5mA 400V l00nA 3.0V 6.0 296
GE3022 352 4000V 10mA 400V 100nA 3.0V 6.0 296
GE3023 352 4000V 5mA 400V l00nA 3.0V 6.0 296
PROGRAMMABLE THRESHOLD COUPLER

TYPICAL
ISOLATION CURRENT BVCEO
GETYPE PAGE
VOLTAGE IVpk) TRANSFER ICEolnA) IVOLTS) I/LSEC) VCE~AT) PKG
10. MAX. M X.
MIN. RATIO Mil. MIN. tr I tf
HttA10 220 1500 10% 50 30 2 I 2 .4 296
AC INPUT COUPLER
H11AAt 230 2500 20% 100 30 2 2 .4 296
H11AA2 230 2500 10% 200 30 2 ' 2 .4 296
H11AA3 230 2500 50% 100 30 2 2 .4 296
H11AA4 230 2500 100% 100 30 2 2 .4 296
CNY35 336 1500 10% 200 30 2 2 .4 296
BILATERAL ANALOG FET OUTPUT

ISOLATION ON·STATE OFF·STATE TURN·ON TURN·OFF
PAGE VOLTAGE Iplc) RESISTAICE' BREAKDOWN TIME
GETYPE NO. RESISTANCE VOLTAGE TIME ·PKG
MIN. MAX. OHMS Mil. OHMS IJLSEC) I/LSEC)
H11F1 260 2500 200 300M 30 15 15 296
H11F2 260 2500 330 300M 30 15 15 296
H11F3 260 1500 470 300M 15 15 15 296

ISOLATION TURN ON HYSTERESIS
OUTPUT VOLTAGE MAXIMUM OPERATING
PAGE VOLTAGE CURRENT 10FFilON
GETYPE
NO. IRMS) IFON. RATIO =
VOL liD 17mA) DATA
. RATE.NHZ
VOLTAGE
PKG
MIN. MAX. MIN. MAX. MAX. MIN. MAX.
HltLl 274 2500V 1.6mA 0.3 0.9 0.4V 1.0MHz 3V l6V 296
H1tL2 274 2500V 10mA 0.3 0.9 0.4V 1.0MHz 3V l6V 296
H11L3 274 2500V 5mA 0.3 0.9 O.4V 1.0MHz 3V 16V 296
12
OPTOELECTRONICS THEORY
1.1 OPTOELECTRONIC DEVICES

This chapter describes the basic semiconductor devices utilized in opto-electronics, their
principles of operation and their circuit functions to give the circuit designer an understanding of the
device characteristics of interest in optoelectronic applications.
1.1.1 Light Sources

Many different light sources need to be considered, such as light emitting diodes, tungsten lamps
(evacuated and gas filled), neon lamps, fluorescent lamps and Xenon tubes. Because most light emitters
are designed to work as visible light sources, the information on the specification sheets is mainly
. concerned with the visible part of the spectrum. The information is given in photometric rather than
radiometric terms. Many references contain excellent discussions of terms and definitions used in
, 'light" measurement; a brief coverage of the quantitative aspects of light in optoelectronics is covered
in a later section of this manual. Since the characteristics and operation of the conventional light sources
(i.e., lamps, flash tubes, sunlight) are familiar, the only light sources to be detailed are the
semiconductor diode sources, laser diodes and light emitting diodes.
Junction luminescence, or junction electroluminescence, occurs as a result of the application of
direct current at a low voltage to a suitably doped crystal containing a pnjunction. This is the basis of the
Light Emitting Diode (herafter referred to as LED), a pn junction diode that emits light when biased in a
forward direction. The light emitted can be either invisible (infrared), or can be light in the visible
spectrum. Semiconducting light sources can be made in a wide range of wavelengths, extending from
the near-ultraviolet region of the electromagnetic spectrum to the far-infrared region, although practical
production devices are presently limited to wavelengths longer than"" 500nm. LED's for electronic
applications (due to the spectral response of silicon and efficiency considerations) are normally infrared
emitting diodes (hereafter referred to as IRED). The IRED is an LED that emits invisible light in the
near-infrared region. Forward bias current flow in the pn junction causes holes to be injected into the
N-type material and electrons to be injected into the P-type material, i.e., minority carrier injection.
When these miniority carriers recombine, energy proportional to the band gap energy of the I
semiconductor material is released. Some of this energy is released as light, while the remainder is
released as heat, with the proportions determined by the mixture of recombination processes taking
place. The energy contained in a photon of light is proportional to its frequency (i.e., color) and the
higher the band gap energy of the semiconductor material forming the LED, the higher the frequency of
the light emitted.
General Electric offers two types ofIRED's, both using a relatively low band gap, silicon doped,
liquid phase epitaxially grown material. Gallium Arsenide (GaAs) is used to make an efficient and
extremely reliable IRED, with a peak wavelength (>.) "" 940nm. A different process is used to increase
13
.
the frequency. It is done by replacing someofthe gallium with aluminum. This increases the band gap
energy, yielding anIREDwhich emits at A= 880nm.Due to decreased absorption in the bulk material,
this gallium aluminum ~rsenide (GaAIAs) emitter is much more efficient than the GaAs emitters. Also,
the 880nm wavelength is better matched to the silicon detectors, increasing detector sensitivity. The
combinatiOli of these factors leads to greatly increased overall system response. Although the GaAIAs
wavelength can be widely varied by AlIGa ratio, each change is a separate challenge in performance,
cost and reliability.
It is also possible to increase the wavelength by decreasing the band gap energy. This can be done
by using an element such as indium instead of aluminum to change the band gap energy, yielding a
wavelength longer than lOOOnm. Unfortunately, this process tends to be more challenging than
GaAIAs. However, the long wavelength emitters are useful in fiber optic communications, where glass
fibers may be optimized for low absorption loss and high bandwidth at these infrared wavelengths.
The diode laser is a special form of LED or IRED with tightly controlled physical dimensions and
optical properties in the junction-light producing region. This produces an optical resonant cavity at the
wavelength of operation such that optical-electrical feedback assures highly efficient, directional and
monochromatic light production. The small, intense, virtually monochromatic beam and high
frequency of operation made possible with the diode laser can be of great advantage in applications such
as fiber optics, interferometry, precise alignment systems and scanning systems. The precision optical
cavity is difficult to manufacture and can build stress into the crystal structure of the laser that will cause
rapi~ degradation of light output power. Although laser diodes offer high performance, they can be
uneconomical and reliability must be assessed for each application.
The electrical characteristics of the LED, laser diode and IRED are similar to other pn junction
diodes in that they have a slightly higher forward voltage drop than silicon diodes because of the higher
band gap energy , and a fairly low reverse breakdown voltage because of the doping levels required for
efficient light production.
LIGHT
,,
,.,'. ... -
I
,,
I
100
10
<i.
~ 1.0 x = .!!£
E
IL
H
FOR GALLIUM ARSENIDE
0.1
). = 1.237 = 1.237 = .940 MICRONS
Ew 1.316 '
). = WAVELENGTH OF RADIATION
.01 h = PLANCK'S CONSTANT (eV-.1
c = SPEED OF LIGHT (pm/s)
Ew = BAND GAP ENERGY IN ELECTRON-voLTS
FIGURE 1.1: THE FORWARD BIASED LIGHT EMITTING DIODE PN JUNCTION
14
1.1.2 Light Dete.cting Devices
A light source energized by electricity is only part of the semiconductor optoelectronics picture.
Light detectors, devices based on mass produced silicon semiconductor technology and which convert
light signals into electrical signals, are another significant part of the modem semiconductor
optoelectronics picture.
B. Photodiode - Basic to understanding silicon photosensitive devices is the reverse biased pn
junction, photodiode. When light of the proper wavelength is directed toward the junction, hole electron
pairs are created and swept across the junction by the field developed across the depletion region. The
result is a current flow, photocurrent, in the external circuit, proportional to the effective irradiance on
the device. It behaves basically as constant current generator up to its avalanche voltage, shown in
Figure 1.2.1t has a low temperature coefficient and the response times are in the submicrosecond range.
Spectral response and speed can be tailored by geometry and doping of the junction. Increasing the
junction area increases the sensitivity (photocurrent per unit irradiance) of the photodiode by collecting
more photons, but also increases junction capacitance, which can increase the response time.
+1 p
r
VA Ho +VA
HI
H2
H3
H4
- + R
j -Ip
//H
A L
TJ = QUANTUM EFFICIENCY
q = ELECTRON CHARGE =
Ip- 1.6 x 10-19 COULOMes
cp = PHOTONFLUX DENSITY IN
- + R PHOTONS/SEC-em 2
'-----I
A = AREA IN em 2
FIGURE 1.2: LIGHT SENSITIVE REVERSE BIASED PN JUNCTION PHOTODIODE
The absorption coefficient of light in silicon decreases with increasing radiation wavelength.
Therefore, as the radiation wavelength decreases, a larger percentage of the hole-:electron pairs are
created closer to the silicon surface. This results in the photodiode exhibiting a peak response point at
some radiation wavelength. At this wavelength a maximum number of hole-electron pairs are created
near the junction. The maximum of the spectral response curVe of the Ll4G phototransistor is
approximately 850nm. For wavelengths longer than this, more hole-electron pairs are created deeper in
15
the transistor beyond the photodiode (collector-base) junction. For shorter wavelengths, more of the
incident radiation is absorbed closer to the device surface, and does not penetrate to the junction. In this
manner, spectral response characteristics of the silicon photodiode are modified by the junction depth.
'All common silicon light detectors consist of a photodiode junction and an amplifier. The
photodiodes are usually made on a single chip of silicon from the same doping processes that form the
amplifier section. In most commercial devices, the photodiode current is in the submicroampere to tens
of microamperes range, and an amplifier can be added to the chip at minimal cost. Total device response
to bias, temperature and switching waveforms becomes a combination of photodiode and amplifier
system response ..
All semiconductor junction diodes are photosensitive to some degree over some range of
wavelengths oflight. The response of a diodeto a particular wavelength depends on the semiconductor
material used and the junction depth of the diode. In some cases, light emitting diodes can be used to
detect their own wavelength oflight. Whether or not a particular device is photosensitive to its emission
wavelength depends· upon how well the bulk material absorbs this wavelength to create hole electron
pairs. GaAIAs, which has high output efficiency due to decreased bulk absorption at 880nm, exhibits
virtually no photosensitivity at 880nm for the same reason. The GaAs emitters, however, tend to be
reasonable detectors oflight generated at the 940nm GaAs emission wavelength. This phenomenon can
be very useful in some applications, such as half-duplex communication links.
h. Avalanche Photodiode - One type of amplifier system in common use can be incorporated as
part of the photodiode itself. An avalanche photodiode uses avalanche multiplication to amplify the
photocurrent created by hole-electron pairs. This provides high sensitivity and speed. However, the
balance between noise and gain is difficult, therefore costs are high. Also temperature stability is poor
and a tightly controlled, high value of bias voltage (lOO-300V) is required. For these reasons, the APD
is used in limited applications.
c. Phototransistor - The light sensitive· transistor is one of the simplest photodiode-amplifier

combinations. By directing light toward the reverse biased pnjunction (collector-base), base current is
generated and amplified by the current gain of the transistor. External biasing of the base is possibl~, if
that contact is accessible, so that the formula for emitter current is:
IE == (Ip ± IB)(hpE + 1)
where Ip == Photon generated base current
IE == Emitter current
. IB == Base current
hFE = Transistor DC current gain
16
C
B~ E
SCHEMATIC
Bo---.4---H
C
E
EQUIVALENT
CIRCUIT
PHOTONS
WIRE TO BASE ' ... _

jf;; WIRE TO EMITTER
TERMINAL
/
N TE RM I NAL -:-~::::=====~
PHOTO
N SueSTRATE
SENSITIVE
E J UNCTI ON r-----;;;Co~LLE;;:;O""OR~T..
ERM;;;;'N;;;AL-------1V
JUNCTION PHOTODIODE REGION TRANSISTOR REGION

REPRESENTATION
FIGURE 1.3: LIGHT GENERATED CURRENT IN PHOTOTRANSISTOR
The formula shows that the sensitivity of this transistor can be influenced by different bias levels at
the base. It also indicates that response of the phototransistor will vary as the hFE varies with current,
bias voltage, and temperature. Speed of response is affected by a greater factor than the speed of the
transistor. The switching time of the combination is usually governed by the RC time constant of the
base circuit, i.e., the input time constant of the amplifier. This is due to the capacitance of the
photodiode, combined with the low base currents and normally unterminated base contact causing high
. input impedance, and multiplied by the voltage gain (Av) of the amplifier. This fact leads to a
generalization of photodetectors: "higher gain, slower response." This generalization does not of
course, cover all cases, for example, where the voltage across the phototransistor is constant
(.:1VCB =O), i.e., Av=O.
17
EQUIVALENT CIRCUIT SPEED
C
t = f(A X hie x C)
t = SWITCHING TIME
A = VOLTAGE GAIN
PHOTO
DIODE hie = INPUT IMPEDANCE
C = PHOTODIODE CAPACITANCE
FIGURE 1.4: PHOTOTRANSISTOR SWITCHING SPEED
The high value of hFE and large collector-base junction area required for high phototransistor
sensitivity can also cause high dark current levels when the collector-base junction is reverse biased.
The phototransistor dark current is given by
.lcEo(DARK) = hFE ICBO
where leBO is the collector-base junction leakage current. This leakage is proportional to junction area
and periphery at the surface. Careful processing of the transistor chip is required to minimize the
phototransistor dark current and maintain high light sensitivity. Typical phototransistor dark currents at
lOV reverse are on the order of InA at room temperature and increase by a factor of two for every 10°C
rise in temperature. Phototransistor specifications normally guarantee much higher dark current limits ,
i.e., 50 to 100 nA, due to the limitations of automated test equipment.
Dark current effects may be minimized for low light level applications by keeping the base-
collector junction from being reverse biased, i.e., having a VCEO ofless than a silicon diode forward bias
voltage drop. This technique allows light currents in the nanoampere range to be detected.
A circuit illustrating this mode of operation is shown in Figure 1.5. The band gap effect of the
highly doped BE junction of QI dominates the open base potential, forcing V BE(OI) to equal one diode
drop. Since VBE(QI) closely approximates V BE(Q2) (one diode drop each), V BC (Ql),= O. This creates
a minimum leakage current condition.
12V DC
47K
D41K1
22M
91K
2N5232
Q2
L14Q1
QI
FIGURE 1.5: USE OF PHOTOTRANSISTOR AT VERY LOW LIGHT LEVELS
This circuit will tum the load on when illumination to QI drops below approximately 0.5
foot-candle.
18
d. Photodarlington - Basically, this is the same as the light sensitive transistor, except for its
much h~gher gain from two stages of transistor amplification cascaded on a single chip.
c c
C
+I p1 + I p2
A~
).~ ~
B '= B
E hFE2
N
IE2
E E
FIGURE 1.6: PHOTO DARLINGTON AMPLIFIER ILLUSTRATING THE EFFECTS OF PHOTON CURRENT GENERATION
lEI = IPI (hFEI +

1)
= (IP2 + IE~)(hFE2 + 1)
IE2
= [IP2 + Ipi (hFEI + 1)] (hFE2 + 1)
IE
Because lEI > > IP2
IE2 "'" Ipt (hFEI)(hFE2)
where IE = Emitter Current
Ip = Photon produced current
HFE = DC 'current gain of transistors 1 and 2
IB = Base current
With different bias levels at the base:
IEZ = [lP2 + (Ipi ± IB)(hFEI + 1)](hFE2 + 1)
Since hFE > > 1, a close approximation to this equation is:
IEZ "'" (lPI ± IB)(hFEt)(hFE2)
To maximize sensitivity, IPI should contain as large a portion of the phot-on produced current as possible.
To accomplish this, an "expanded base" design is used, in which a large area photodiode is included in
the first stage collector-base junction. This photodiode dominates the pellet topography in much the
same way as shown iti Figure 1.3 for the phototransistors.
19
The darlington connection is p~pular for applications where the light to be detected is low level,
since the hFE product normally ranges from 103 to lOs, assuring high electrical signal levels. As with
phototransistors, speed of response suffers, since the voltage amplification can never "be brought to
zero due to 'internal parasitic impedances which cannot be eliminated from the pellet. Thus,
photodarlington speed will always be less than the phototransistor. Dark current effects, as with
phototranslstors, are also amplified by the increased gain of the darlington connection, and can limit
usefulness at high voltage, high temperature and/or high power. A base emitter resistor can minimize
these effects.
e. PhotoSCR (Silicon Controlled Rectifier) - The two transistor equivalent circuit of the
silicon controlled rectifier illustrates the switching mechanism of this device.
A A
Go-~----~--~-H
c I
,~RGK
IL ____ .;... _______ _
c c
FIGURE 1.7: PHOTO SCR AND TWO TRANSISTOR EQUIVALENT CIRCUITS ILLUSTRATING THE EFFECTS OF PHOTON
CURRENT GENERATION AND JUNCTION CAPACITANCE
Photon current generated in the reverse biased pn junction reaches the gate region to forward bias
the npn transistor and initiate switching. Part of this current, Ip , can be channeled around the gate-
cathode terminal to decrease sensitivity. This is also expressed in the formula for anode current, lAo by
the expression (lp ± IG)'
when at + a2 = 1 then IA = 00 ICBO(t) & I CBo(2) - Leakage Currents

IA . = Anode Current a = Current Gain ."
Ip = Photon Current at - Varies with IA and Ip
IG = Gate Current a2 - Varies with IA and Ip ± IG
20
In discrete device literature, photoSCR is often abbreviated LASCR; Light Activated SCR. Since the
photodiode current is ofa very low level, a LASCR must be constructed so that it can be triggered with a
very low gate cu~ent.The high sensitivity of the LASCR causes it to be sensitive also to any effect that
will produce an internal current. As a result, the LASCR has a high sensitivity to temperature, applied
voltage, or rate of change of applied voltage, and has a longer tum-off time than normally expected
ofa SCR.
All other parameters of the LASCR are similar to an ordinary SCR, so that the LASCR can be
triggered with a positive gate signal of conventional circuit current, as well as being compatible with the
common techniques of suppressing unwanted sensitivity. All commercially available LASCR types of
devices are of comparatively low current rating ( < 2A) and can thereby be desensitized to extraneous
signals with small, low-cost, reactive components.
Figure 1.8 shows that the LASCR contains a high voltage phototransistor pnp between the anode
(A) and gate (0) terminals. Due to physical construction details, this "transistor" is of low gain and
behaves as a symmetrical transistor, i.e., emitter and collector regions are interchangeable. Due to the
low gain, photo response is quite stable in this configuration. In fact, this connection has been used with
calibrated units fot measurement of irradiance.
I ILA
+
v ---------..,t-----i----+_ V VOLTS
100 200
(ANODE TO GATE REGION

CATHODE OPEN)
FIGURe 1.8: TYPICAL PNP PHOTOTRANSISTOR ACTION OF LASCR
Because of its high voltage junction parameters, the LASCR has unique spectral and dark current
characteristics compared to the devices mentioned previously.
f. Other Photodetector Amplifiers - There are many other photodetector-amplifier
combinations which are based on the previously discussed principles. The use of integrated circuit
technology allows many combinations of photosensitive devices with active and passive devices on a
single silicon chip. Specific examples of these are the photodarlington with integral base emitter
resistor, the bilateral analog FET photodetector, the triac trigger devices and the optical input Schmitt
trigger. These will be examined in detail as part of the optoisolator system.
1.2 OPTOELECTRONIC COMPONENTS

petailing the basic device characteristics and operation provides an understanding of what can
be expected from the semiconductor, but leaves undefined the actual component characteristics that
will be affected by both device and package parameters. The basic optoelectronic devices can be
packaged to provide·:
21
• discrete detectors and emitters, which emit or detect light;
• interrupter/reflector modules, which detect objects modifying the light path;
• isolators/couplers, which transmit electrical signals without electrical connections.
The following descriptions will provide an insight into the various package characteristics and how
they modify the basic devices. already described.
1.2.1 Optoelectronic Detectors and Emitters

These optoelectronic components require packaging that protects the chip, and allows light to pass
through the package to the chip, i.e., a semiconductor package with a window. The window can be
modified to provide lens action, which gives higher response on the optical axis of the lens, greater
directional sensitivity and a large aperture with less resolution. In most commercial components, the
lens is also an integral part of the package, for economic reasons, so the tight control of optical
tolerances is compromised . somewhat to optimize chip protection via the hermetic seal. This causes
lensed components to exhibit wider variations, unit to unit, than simple window components, as the
optical gain variations and the basic device response variations are multiplied. Due to these factors,
when high gain, highly directional optical systems are required, it is normal procedure to recommend
that components without integral lenses be used in conjunction with external optics of the required
quality.
The other major factor in detectorlemitter packaging is the choice of a plastic or hermetic package.
These may be with or without lens, although the plastic devices have the optical axis perpendicular to
the leads, while the hermetic package optical axis is parallel to the leads. The hermetic package will
operate at higher power, over a wider temperature range and is more tolerant of severe environments,
but it is also more expensive than the plastic package. Although some components are limited to a single
package type, on most the user must weigh the application's technical and economical constraints in
order t<? optimize both the device and package of the optoelectronic component used .
.,801 '-.,00 ~.2301-- -.\.230~
f'- 11Li1tr
.224 .
V 9·'~~" .0If-
HERMETIC PACKAGES
PLASTIC PACKAGES
GLASS WINDOW
GLASS
TO METAL---.;;:-ft~~r OPTO DEVICE
SEALS CHIP
LEAD WIRES -~~~~--- METAL TO

METAL WELD
PLASTIC
OPTO
DEVICE GLASS LENS
CHIP LEAD WIRES
I = PHOTODIODE CURRENT
HE = IRRADIANCE EFFECTIVE ON CHIP OPTO DEVICE
CHIP
LEAD WIRES --~1t~r
Ac = CHIP ACTIVE AREA
AL = L ENS ACTIVE AREA
FIGURE 1.9: DISCRETE OPTOELECTRONIC COMPONENT PACKAGE CONCEPTS
22
1.2.2 Fiber Optic DeviCes
As fiber optics come into widespread use, the need for low cost fiber optic active components is
evident. These components must not sacrifice performance or reliability. The General Electric GFOE
emitters combine General Electric's proven GaAs emitter with unique packaging. The pellet sits in a
reflector and is encased in a clear epoxy. A lens is formed during the epoxy encapsulation operation,
making an efficient reflector-lens system that focuses the light towards the fiber. The GFOD detectors
are made in a similar fashion, without a reflector. Light from the fiber is focused by the lens towards the
detector pellet. These assemblies are placed in a housing that allows direct coupling to fibers terminated
with AMP Optimate® fiber optic connectors. A large variety of fibers can easily and inexpensively be
coupled in this manner. This housing eliminates the need for additional mechanical components,
thereby reducing costs. The assembly system provides close, precise alignment of the fiber with the
pellets, assuring good coupling. Also, electrical and optical properties of the individual devices are
easily evaluated, while reliability can be assessed as easily as that 'of discrete devices. Note that
although separate specifications do not exist, these housings will accept any of the side looking plastic
package emitters and detectors. These may be made available for high volume applications.
OPTICAL FIBER
APPLICATION TO FIBER
GFOD/E
ACTIVE
DEVICE
- FIBER CONNECTED
TO ACTIVE DEVICE
GFOD/E
OPAQUE
PLASTIC
HOUS.ING
CUTAWAY VIEW
OF 100D"tM CORE
FIBER €ONNECTED
TO GFOEIA
LEAD
FRAME
FIGURE 1.10: GFOD/E ACTIVE DEVICE WITH FIBER OPTICS TERMINATION
23
1.2.3 Interrupter/Reflector Modules
The use of interrupter or reflector modules eliminates most of the optical calculations and
geometric and conversion problems in: mechanical position sensing applications. These modules are
specified electrically at the input and output simultaneously - i.e., as a coupled pair - and have
defined constraints on the mechanical input. All the designer need do is provide the input current and
mechanical input (i.e., pass an infrared-opaque object through the interrupter gap) and monitor the
electrical output. Other than normal tolerance, resolution, and power constraints, the only new
knowledge require~:is the ability of the sensed object to block or reflect infrared light and an estimate of
the effects of ambi~!1t light conditions providing false signals. This is true of both "off the shelf"
commercial modules and limited volume custom modules, as the mechanical and optical parameters of
any given pJ.odule('e fixed. Once the module is characterized for minimum and maximum
characteristics, it is a 'cl,yfined electrical and mechanical component and does not require optical design
work for each new application. This puts these sensor modules in the same design category as
mechanical precision limit switches, except that the activatIng mechanism blocks or reflects light
instead of applying a force. Thus mechanical wear and deformation effects are eliminated.
EMITTER DETECTOR
FIGURE 1.11 a: .INTERRUPTER MODULE FIGURE 1.11 b: REFLECTOR MODULE BUILT FROM H23
Most commercially available interrupter modules are built around plastic packaged emitters and
detectors. Reflective modules and other custom modules are built around both plastic and hermetic
parts, depending on the required cost/performance trade-offs. It should be noted that due to the longer,
angle critical, and generally less efficient light transmission path in a reflector module, lensed devices
are dominant in these applications. This also explains the lack of standard reflective modules, because
tight spacing betweert the module and the mechanical actuator must be maintained to provide adequate
optical coupling, which leads to different mechanical mounting requirements for each mechanical
system which is sensed.
24
FIGURE1.12a: REFLECTOR MODULE FIGURE 1.12b: INTERRUPTER MODULE
1.2.4 Optocouplers
Optocouplers, also known as optoisolators, are purely electronic components. The light path, IRED
to photodetector, is totally enclosed in the component and cannot be modified externally. This provides
one way transfer of electrical signals froIIl the IRED to the photodetector, without electrical connection
between the circuitry containing the devices. The degree of electrical isolation between the two devices
is controlled by the materials in the light path and by the physical distance between the emitter and
detector. (Le., the greater the distance, the better the isolation.) Unfortunately, the currenttransferratio
(CTR), which is defined as the ratio of detector current to emitter current (Le., the effectiveness of
electrical signal transfer) is inversely proportional to this separation and some type of compromise has
to be made to achieve the most optimum effects. In the case of the dual in-line package, the use of optical
glass has proven to be a most efficient dielectric. It allows maximum CTR and a minimum separation
distance for a given isolation voltage withstand capability. Minimum (HI1A5100) CTR's of 100% in
combination with isolation voltages of 5000V in phototransistor couplers result. Also, because of the
glass dielectric design, yields are much more predictable, due to positive alignment of IRED and
detector cOIIlbined with common side wire bonding, versus other methods of manufacture.
The reflector design,. illustrated in Figure l.13d, represents a sixth generation optoisolator.
designed utilizing the knowledge and experience of 20 years of optoelectronic manufacturing by
General Electric, world leader in optoisolator technology and production. It represents the most
advanced features in optoisolator design without sacrificing the advantages of the sandwich
construction. Both feature reliable, stable glass dielectric, eutectic mountdown die attach, large gold
bond wires, and flexible protective coating over the liquid epitaxial IRED die. The reflector design has
the additional advantages of:
-highly automated assembly for enhanced quality;
-eliminates one wire bond for improved reliability;
-:-reflects IRED side light for more efficient coupling;
-has triple layer dielectric (silicone-glass-silicone) for better isolation (higher isolation voltage,
lower isolation capacitance).
25
It is expected that the reflector design will prove a new standard foroptoisolatorperfortnance, reliability
and quality as production quality and reliability experience provides the necessary data base to confirm
improvement over the outstanding record of the sandwich design. Large scale, controlled, reliability
testing of reflector construction vs sandwich construction has provided the early indications that lead to
the premise of improved .reliability .. Parametric data comparing production devices built with the
different constructions proves the improved electrical performance.
LIEAO FRAME
aommS,mm
U~~ ~\~
e cB B
AI PACKAGE OUTliNE
COLLECTOR
A r------Q:--'
~~ I
B
MOUNTED
TO LEAD FRAME
K~ C
DETECTOR CHIP
I I
o-j-
L ________ .JI E
B} SCHEMATIC FOR C} SANDWICH CONSTRUCTION D} REFLECTOR CONSTRUCTION CUTAWAY

PHOTOTRANSISTOR
FIGURE 1.13: GLASS DIELECTRIC CONSTRUCTION TECHNIQUES FOR GE 6 PIN DIP
An invaluable modification of the glass dielectric system is the HIlAV construction, which
utilizes the glass as a long (> 2mm) light pipe. This allows a DIP package to meet VDE isolation
requirements as· well as providing ultimate isolation in the six pin DIP. Isolation capacitance of this
design is under O.SpF. Note that a modification of this design, with different physical dimensions, is
used to produce the AC input optoisolator with antiparallel IREDS.
BLACK
ENCAPSULANT
METAL LEADS ---~

!->2.0 mm-l
FIGURE 1.14: CUTAWAY VIEW OF GENERAL ELECTRIC H11AV: 6 PIN DIP OPTOISOLATOR APPROVED TO VDE SAFETY
STANDARD 0883/6.80,. WITH TESTING TO 0730/6.76 AND 0860/11.76
26
Although the DIP package is the most common one used for couplers, other packages are
commercially available to provide higher isolation voltage and other special requirements. For very
high isolation voltage requirements (10 to 50kV) the H22 interrupter module can be modified by the user
FIGURE 1.15: H24 OPTOCOUPLER. 4000V ISOLATION VOLTAGE
at very low cost by putting a suitable dielectric (glass, acrylic, silicone, etc.) in the air gap and insulating
and encapsulating the lead wires. For higher isolation voltages the use of the H23 matched pair
with glass dielectric or the GFOD/E pair and fiber optics can provide a low cost isolator. Both
of these approaches utilize coupler, systems already characterized and are easily handled from
a design standpoint.
27
Notes
28
©li:rID~~
SYSTEMS DESIGN CONSIDERATIONS
2.1 EMITTER AND DETECTOR SYSTEMS
2.1.1 Light, Irradillnce and Effectiveness

When the word' 'light" is used in this discussion instead of' 'electromagnetic radiation," it does
not refer to just the visible part of the spectrum, but to that part of the spectrum where silicon light
sensitive devices respond to irradiance. "Light" is a misnomer for the infrared component, but it has
become accepted usage.
The normalized response of silicon light sensitive devices and output sources is illustrated below.
Peak spectral response is found at approximately 0.85 microns or 8500 Angstroms ()~.) (1 X= 10- 10
meters) for the light activated transistors but shifts down toward 1.0 micron for the LASeR. Individual
device spectral response curves are modified by photosensitive junction depth, minority carrier lifetime
and surface waveplate and reflection effects. The response of the eye is shown for comparison; but it can
be treated just as any other light sensitive device. When the silicon detector response and sources are
compared, it is observed that the IRED GaA1As and GaAs (Si) are capable of most efficient coupling.
ULTRAVIOLET
1R ;~EE~w
li:
I~ORANGE
II I II ~~~ARED
.Lm~ ..... -
- " ,"'COIDCO ~ GaAI As
00ci60 0
100 " ~- .... I'. ~ ... - .....
~ I ~/'
.0
'iJl1'i ...., TUNGSTEN
~ 11ll'~, . ""'0 LAMP
f" I,' I,,I, I ,
NEO.N ('1
~ 80 LAMP '-a.{i4 I III ,~'-I....
a. I I ,1,1.... "
~ 60 34000K ,2500 o K
o " III ", " ........, , "
o 40
~ ,'I, , ,~ J" , ........
........ ....
, ....
',I,
i 'I :IJ:ft \
::J " I / It' I II ......... ...
« .......... .....
~ 20 \'I-GaAs + SILICON -
~ / /1 I' , \
0.2 1.4 1.6 0L-~0~.2~~0~.4~0~.6~~0~.8~~1.0~~1.72--~,.4~~1.~6--~'.8~~2~.0
~ WAVELENGTH - MICRONS ~ WAVELENGTH - MICRONS
LIGHT SENSITIVE DEVICES LIGHT EMITTING DEVICES
FIGURE 2.1: NORMAL'ZED SPECTRAL CHARACTERISTICS OF LIGHT SENSITIVE AND LIGHT EMITTING DIODES
Since the spectral characteristics of most sources and detectors do not match, a rigoroJIS
determination of the response of the photodetector to a given incident light level (Irradiance, H) would
require: a) determining the irradiance and spectral content of the light, b) the spectral response and
sensitivity of the deteotor, c) integrating the spectral response and spectral content to determine
effectiveness, d) multiplying by the irradiance to determine the effectiveirradiance (HJ0 and e) multiply
by the sensitivity to determine the response. If the irradiance is not easily measurable (the nohnal case),
it is determined by: a) analyzing the power into the source (PiJ, b) determining the conversion
efficiency of the source in producing light (,,) and c) defining the spacial distribution ofthe output and
the transmissivity of the light path.
'Ii
29
AREA UNDER CURVE C {"HAH(BI
EFFECTIVENESS = AREA UNDER CURVE A
{"HAl
1.0
w
(/)
z
oCl.
(/)
w
a::
w 0.5
>
~
«
..J
w
a::
0~~~1m~~~~~
0.3 0.4
WAVELENGTH IN MICRONS
FIGURE 2.2: EFFECTIVENESS OF SOURCE A ON DETECTOR B
INCANDESCENT LAMP IRED WITH LENS
100
100 WATT
~
z
w 80
f~
u
a::
w
Cl.
I 60
~
I I ~
I I Cl.
r
I I ~
E-+--+--l-+--tl90o : \ ~
040
-I8~ w
I I
~
~
:5w 20
a::
lJ
"
LED SSC
I
050 40 30 20 10 0 10 20 30 40 50
8- ANGULAR DISPLACEMENT FROM OPTICAL AXIS
DEGREES
FIGURE 2.3: SPACIAL D!STRIBUTION OF LIGHT SOURCES
In practice, all these parameters vary. For feasibility studies, approximations are used, then, in the
prototype stage,effective irradiance is measured using calibrated detectors and "worst case" (or a
distribution ot}sources to analyze worst case and tolerance effects.
It is often difficult to obtain worst case samples for system evaluation purposes. In many cases,
sufficient accuracy to evaluate detector irradiance levels can be obtained by using the collector base
photodiode response of an unlensed phototransistor or photodarlington. The accuracy of this method
rests on the conversion efficiency of silicon, a basic physical property, which peaks at about 0.6 A/W in
the 800 to 900nm spectral region. For the L14C phototransistor which has an active area of 0.25mm
square and peak response around 850nm, this corresponds to approximately 1.4/LA per mW/cm2 with
the 880nm GaAIAs IRED, 1.2/LApermW/cm2 for the 940nm GaAs (si) IRED and OA/LA per mW/cm2
using 2870 0 K tungsten light. The Ll4N phototransistor, with Imm2 active area, will provide 4 tiines
these output currents for uniform irradiance. The inconsistencypf integral lenses makes this method
impractical for lensed detectors.
30
TABLE 2.1: APPROXIMATE EFFECTIVENESS OF VARIOUS SOURCES
~
RADIATORS HUMAN EYE SI LICON PHOTOTRANSISTORS
Tungsten Lamp 20000 K .003 .16

22000 K .007 .19
24000 K .013 .22
26000 K .021 .24
28000 K .030 .27
30000 K .044 .30
Neon Lamp .35 .7
GaAs IRED 940nm 0 .8
GaAIAs IRED 880nm 0 .98
Fluorescent Lamp .1 .4
Xenon Flash .13 .5
Sun .16 .5
To illustrate a feasibility study using approximation, consider a lOW tungsten lamp source and a
silicon phototransistor of lmA/mW/cm2 (HE) sensitivity, 0.1 meter (4 inches) apart:
Pout = 11 • Pin ~ .85(10) = 8.5W
Conversion efficiency of tungsten lamps is 80% for gas filled and 90% for evacuated lamps.
Assuming a spherical distribution of light from the lamp -
HT = Pout mW/cm2 ~ 8500 = 6.8 mW/cm2
4 • 1r • d 2 12.56 (10)2
HE = 0.25 . HT mW/cm 2 = 1.7 mW/cm 2 .
Assuming that there are no transmission losses in the path, the phototransistor collector current is
Ie = lmA/mW/cm2 x 1.7mW/cm2 = 1.7mA,
where: Pin - Power input (mW)

Pout - Power output (mW)
d - Distance (cm)
11 - Conversion efficiency of light source
HT - Total irradiance (mW/cm2 )
HE - Effective irradiance (mW!cm 2 )
Ie - Transistor collector current
For the IRED, or any lensed device, the spacial distribution of energy is determined by the lens
characteristics, and no simple relationship exists for general cases. For the case of the lensed TO-18
IRED's (LED55, F5D families), with a TO-18 detector on the optical axis, analysis of the beam pattern
. in a piece-wise linear integration indicates: .
HE =2.6 Po/(d+ 1.1)2 for d~ 1 cm, as illustrated in Fig. 2.4
Experimental data indicates this is a conservative model, although it should be noted that the lenses
exhibit a wide variation in optical characteristics.
31
100~~------'-------~~----------r-------~.----------,
0::
o
l-
(/)
iii
2
<l
0::.
b 10r---------~------~~~--------~--------1_--------~
I-oo
OUJ
:I::I:
Q.(,)
02
1--
o
UJ
..J
,
C!>
2
(3
it
oo O.t~------___::_L:_:--------_____:l_----------L---------....L----...1.---.-.J
0.001 0.01 0.1 10 100
PERCENT
% lensed TO-1S IRED output incident on TO-1S phototransistor lens (0.1cm 2 ) of L 14C, F, G, N, P
axis, claer path transmission: To find Hequiv.@ 2S70oK (spec. condition) multiply Po of LED
by 30 times this percentage.
FIGURE 2.4: LENSED LED TO PHOTOTRANSISTOR COUPLING CHART
A F5D Series GaAIAs IRED will have efficiencies of 5% to 10%, and on a steady-state basis is
limited to about 150mW power dissipation in a normal range of ambients. For the same lOcm spacing,
using the IRED at 150mWand 8 % efficiency, the transistor collector current is:
Ic=2.6 (150mW) (.08) (.98/.27) (lmA/mW/cm2)/(11.1cm)2= .9SmA,
where the .98 + .27 factor is the spectral response correction from Table 2.1.
The trans,istor collector current is about 13 percent ofthe current the lamp generates, but with an
input power of only I.S% of the lamp power, the efficiency of the total system has increased
approximately by a factor of 10 due to the lens and the effectiveness of the light. If the IRED is operated
in a pulsed mode, Po can be raised'to SO times the steady-state value for short times (== l#A-sec) and low
repetition rates (200pps),although efficiency suffers above the SOOmA (== lW) bias point. The effects
oflens misalignment, temperature, tolerances, and aging all must be evaluated before "worst case" or
"Gaussian" expected performance can be determined, but these steps should follow initial breadboard
verification of the assumptions made above. In critical applications, the LED output and transistor
photodiode and gain characteristics must now be analyzed to determine response.
940.111 Ge,l. 880mm Go AI As

10 I
PULSED DATA @ 10fLSEC. 10 Hz !

",Cl.
0- .... I". ~ I-"
o-rf!
v:..
--
~~
...... V
~ GE ~ /
",10
0-
...J
g EFFICIENCY
.I'"
..
<f)
...J
0
~
, > I
~ >
I
. ,''''1:1 C r--
/ r-
>- ~
~~
",I!!
<.)
~1'. "~l"
I" ~Vo"" f'
0-
Cl."-
"-
0.1
0.01 0.1 I 10 '" J
10'" I
IF - FORWARD CURRENT IN AMPERES IF - FORWARD CURRENT IN AMPERES
FIGURE 2.5: TYPICAL POWER OUT. FORWARD VOLTAGE AND EFFICIENCY OF IREDS
32
....OTODIODE
-
10000
. 5000 -
~ "'
z
~ 10- 3 t--'---t---f---+-----1 G-C;O~' 'ljc~
~ ~ p.~\..\~
0:2000
~ ~ ~.I
~~ PULSE DATA AT 80fLSEC. 60Hz
6 in 1000
~
zC[
j 10- 5 t---+---,,.,...'+--::-~~----1 0: I_IV
d ~ 500 PHOTOTRANSISTOR. VeE -
10- 7 L..oII:~~_ _......_ _ ...6-_--!

o
:I:
n. 200
"'-~
0.1 10 mW/cm2 8
10 .01 0.1 10 100
IRRADIANCE
COLLECTOR CURRENT {mAJ
FIGURE 2.6: TYPICAL PHOTODETECTOR CURRENT AND GAIN
TABLE 2.2: CHECK LIST OF REQUIRED SOURCE/DETECTOR INFORMATION
CHECK LIST SOURCE
1. Relationship between the radiator's input electrical power and

peak axial intensity of radiation Specification Sheet
2. The radiator's relative radiation pattern Specification Sheet
3. The radiator's relative output as a function of wavelength* Specification Sheet
4. Distance between radiator and receiver Design Requirements
5. Angular relationship between axis of radiator and receiver Design Requirements
6. Relative acceptance pattern of receiver Specifica~ion Sheet
7. Relative sensitivity of receiver as a function of wavelength * Specification Sheet
8. Sensitivity of receiver Specification Sheet
9; Light transmission efficiency Path Material Properties
*Numbers 3 and 7 are not needed if the effectiveness is known.
The transmission of the light from source to detector is normally not a problem and can often be
cliecked visually. Most organic materials, e. g., plastics, have strong attenuation of near infrared
wavelengths such that (although they look transparent and will work with incandescent light) they may
not work with IRED's. This problem is noted on transmission paths exceeding 1 foot. The strongest
common attenuations are found around 890nm in organics and 950nm in materials containing the OH
radical. This problem commonly occurs in fiber optics systems because of their long path lengths. Fiber
optics systems are discussed in a later section.
33
Another criteria for selecting the proper light source is the speed at which the system must work.
As can be seen in Figure 2.7, .applying ac or unfiltered dc to light emittin8 devices. may change their
effective irradiance by as inuch as 30% for tungsten lamps, or as much as 100% for IRED's. Only
filtered dc will yield constant effective irradiance for all light emitting devices. For high speed data .
transmission, the high efficiency GaAs and GaA lAs are capable of operation at frequencies greater than
ImHz when optimized.. Faster diodes are difficult to build with high efficiency and long life.
In soine applications it is advantageous to have an optoelectronic transceiver, a unit that can both
transmit and receive via light. Although most LED's and IRED's are light sensitive, they usually are
relatively insensitive at the wavelength they produce. This is true of the 880nm high efficiency GaAIAs
IRED, but not as pronounced on the 940nm GaAs (Si) IRED. The 940nm units ~lso will detect 940nm
radiation. The sensitivity is less than that of a silicon photodiode: typically O.15/LA per mW/cm2 on an
unlensed device such as the LED55BF. Leakage current is typically under 10nA at 2V and 25°C,
doubling with every 25°C temperature rise. This would provjde a 20db noise margin at 15uw/cm2 and
50°C in an all GaAs (Si), 940nm., transmission system without lenses on the detector. Lensed units
improve sensitivity at the expense of resolution and alignment requirements.
TRANSMISSION CHARACTERISTICS OF GLASS FIBER OPTICS AND PLASTIC FIBER OPTICS

00 ISOo 360 0 'SOo 3600 00 ISOo 3600 'SOO 360°
I I· I I I 00 ISOo 3600 'SOO 3600· I , , I' I
I I I I , I' I I , , I I I ,
I- I AC I "I ,.-'/2 WAVE DC--, re-FULLWAVE DC.....,
I I , I I I I I I. , I ' , ! I
, /', ,
" 'I 1/'" I
II 'I ,,\I
: : \11 \111/'
,'\ I
','I ,,', I
I,
I"~ I / ' I ,"
," "'NPUT WAVEFORM
o LINE ~--\--t--'--r-.f--L-...f_-~-,-l--~-~--~-j
I I, ,I "" I I I I I I I I , I
I I, I , I \ 'I I ' I I I I , , , I
I I" ~ I I I I , I I I I I
, '~HE : 22% I ' .o.HE: 30% , I .o.HE :22% , FROM
'fl...
, -J - , , ' , .
~ " , '.' \ " '\ / 'It,
,-, 1
I HE MIN
~H
I
-
E MAX I
:
I ...J
I,' '" I /
~ ,
Il
I E MIN
~_'
...........
HE MAX I
1
....
::
I
! "-/ I - I -
\~
HE
'H
". '\ / '\-" ,
I ,I
E MAX
MINI
- I HE
INCANDESCENT
I GE NO. ISI3
114.4VO.1 AMP
I ::: 0.S6 CP
o LINE t--..,";_-,.-1,-,.- oft -r- -.--"r--r--1---r*-.., -jr-~
I
I
I
I
~HE ='100% II II I~H E-1- 'OO~k°
I
I
I
I
,
A~,E-,
- I~Ook I
°1
.:
-+r-
I t\ I 'n-:.-Tl I r, I : riJT! '" I r\ I It't, ,, ,r\,IT FROM
I I \ I , , , 'HE I"
MAX I , ' ,HE I'"" MAX tiE I MAX HE IRED
I", I, ,I J' 1"" " " .. I I' ',' 'I' ' I ' "t
o ""_ .... - - ...I, ,I.... - I' - - II _'-'
L'NE ',-" -~ I, __ ' L " \ l.L_il_...J:.£_u.
.1.&_ II, \ , ',' \
.... - -
_ .... _ ....
o LINE [~:~::~~LLLr:iJ
, , ,
,NPUT WAVEFORM
: ' ,
r---j-----~ ~""f'- ..... /'--.. ~
HE FROM 'NCANDESCENT
IAHE =0 HE = CONS~
L
I HE MAX
I • .E MIN I
!
GE NO.'S'3
I i4.4V O.IAMP
o LINE I - - - ------l.-r"--lJ--.&
. I I I - --
, - - II
::: 0.S6 CP
I I I I ii,
J
,
,
,
I
,
I
I I
~HE : '00 Yo l
I~HE: OfHE=CONSTI n D;fM~X HE FROM IRED
o LINE [ ___ J _____ J_l,.._L_ __ -l..J
FIGURE 2.1: TIME DEPENDANCE OF IRRADIANCE FOR VARIOUS POWER SUPPLIES
34
2.1.2 Lenses and Reflectors
$imple converging lenses are commonly used to extend the range and improve the directionality of
optical systems. Improved directionality minimizes pick up or "stray" ambient light, as well as
defining the volume in which an object can be sensed. In emitter-detector systems (as opposed to light
level sensing) range is increased by focusing the light from the emitter into a beam and/or by focusing
the received light on the detector. Focusing reflectors may be used to perform the same functions and are
normally analyzed using the same techniques. Reflectors can offer better optical performance, and must
be evaluated for cost, mechanical properties, and tolerances if considered. Optimum mechanical
performance and optical efficiency is obtained when opto-electronic components without built-in lenses
are used with component optics, as both range and directivity are improved over using integrally lensed
devices. This is due to the better optical parameters of component lenses, compared to those integral to
the semiconductor device package, which are not compromised by packaging requirements of the
semiconductor material.
LED55C LED55CF
INTEGRAL LENS NO LENSES
FIGURE 2.8: TYPICAL INFRARED IRRADIATION PATTERN OF IRED ON SURFACE 5 CM. AWAY (ACTUAL SIZE)
Lenses are normally specified by the fnumber, i.e., focal length divided by effective diameter,
and either the effective diameter or the focal length.
f# = __F_o_ca_I_Le_n.=,gt_h_
Effective Diameter
35
Normally, the effect on irradiance (H), of adding a lens to the detector end of a system can be
approximated by determining th~ ratio of the area of lens to the area illuminated in the plane of the base
of the phototransistor and multiplying it by the irradiance incident on the lens. This approximation is
only valid for irradiance that approximates a point source, i.e., the diameter of the light source is less
than 0.1 times its distance from the lens. The lens will reflect and attenuate the result by about 10%.
DIAMETER FOCAL
o LENGTH
~~~1J
HOETECTOR a; 0.9 HLENS-I_2
(1- D/F)
"'09H __
1-
-. LE NS (1_ I/f#)2
. WHEN IMAGE FALLS ON

DETECTOR ACTIVE AREA,
LIGHT ~ LIGHT i.e. d!Of F.
SOURCE LENS DETECTOR
FIGURE 2.9: DETECTION WITH A CONVERGING LENS
Although the use of lenses narrows the field of view of the detector and alleviates some ambient
light problems, it can also widen the path of light that must be blocked to turn the detector off.
Resolution is always less when focusing lens systems are used on the detector without light masking.
W
LIGHT LENS LIGHT
DETECTOR DETECTOR
-D~~~-~~~~==~.t:
W
---~~~=]~~~=~
---~---- l---t--..
----
---- --
----.-
T
NO LENS CONVERGING LENS
W IS THE WIDTH AN OBJECT MUST HAVE TO BLOCK THE

DETECTOR FROM LIGHT, i.e. FULL ON TO FULL OFF.
FIGURE 2.10: EFFECT OF LENS ON RESOLUTION

I
LLJ
(f)
~ 0.51------{I/;
a..
(f)
LLJ
0:
o
LLJ 0.3 1----/1
N
..J
« 3mm SEPARATION, UNLENSED,
::iE UNAPERTURED O.5mm
0:
o SOURCE - DETECTOR PAIRS
Z IF = 20mA
0.1 0<LL~.<.<..<..<:..tJ..L~"""'''''-- _ _--'-_ _ _--,-_ _ _ _--'-_ _ _ _ _- - - '
o 1.0 2.0
APERTURE DIAMETER - mm
FIGURE 2.11: EFFECT OF APERTURE SIZE ON RESPONSE TRANSPARENT APERTURE ON OPAQUE FIELD
36
With an unlensed L14C phototransistordetector, the light sensitive area is about 0.5mm (0.02 in.)
square. Diffraction, toler~nce and edge effects will add approximately 0.3mm(O.012 in.) to the path
width which must be blocked to darken the detector. When a converging lens is added in front of the
detector, the field of view is lessened, and the light path is widened by the lens system's magnification.
Adding a converging lens to the light source increases the irradiance on the detector but has insignificant
effect on the light path width. Converging lenses on either device makes detector/source alignment
more critical as the light path and view ofthe devices are now "beams." The combination oflenses and
apertures can tailor field of view and resolution in many applications. For high resolution applications
the consistency of the lenses becomes significant. Various masking and coding techniques are used to
minimize these interactions, with sensitivity or transmission efficiency usually being the parameters
traded off with alignment and cost of materials.
2.1.3 Ambient Light

The effect of ambient light on optoelectronics is generally difficult to estimate, since the ambient
light varies in terms of level, direction, spectral content and modulation. If the detector is not highly
directional, it will normally be found that all reflecting surfaces near the system must be coated with a
non-reflecting material or shielded from both ambient light and reflections of light from the light source.
Note that back-lighting of the detector can cause trouble by reflecting off the object that normally blocks
the light path. As a final solution, a pulse encoded and decoded light system can be used to give very
high ambient light immunity, as well as greatly extend the distance over which the system will operate.
3mmSEPARATION
0.5mm SENSITIVE AREA
AMBIENT LIGHT 0.5 mW/cm
IF = 0
10-5
I r N01SHI~:'
~ RAL. AL.UMINUM SHIEL.D-
~ NATU - ,l
NO LENSES AND NO APERTURE-
'"a:w ./ I I I
w
0.
/ ~AT BL.AC\< SHIEL.9
::< 10- 6
<t
./
~ N01SHIELD
H
0
0
w
/
/ /
/'
~ NATURAL. AL.UMIN
UM SHIeLD
I --=--
-
10-7 / / LENSES AND 1mm APERTURE --
IA'
11..---- - -FL.AT BL.AC\< SHIEL.D
'I'
1 2 3
SHIELD TO DETECTOR SPACING-mm
FIGURE 2.12: EFFECT OF AMBIENT LIGHT AND SHIELD FINISH ON OPTOELECTRONIC OBJECT DETECTOR
2.1.4 Pulsed Systems

High levels of light output can be obtained by pulsing the IRED. High signal to noise ratios at the
detector are obtained by AC signal processing and simple pulse decoding techniques. Such a system is
illustrated in Chapter 6.
Pulsed light systems can provide significant performance improvements in detector-emitter pair
applications at the expense of more complex circuit design. The cost of a pulsed system may actually be
.lower than that of the high power light source and sensitive detector required to do a similar job, since
low cost commodity components are easily designed into a pulsed system. Performance of the pulsed
system will almost always be better than a steady-state system.
37
SYNC PULSE
r-----
. I
GENE~ATOR
I
I
I
OUTPUT
REFLECTIVE
OBJECT
FIGURE 2.13: TYPICAL PULSED REFLECTIVE OBJECT SENSOR
Generally, low cost' systems· use unijunction transistor (UJT) derived current pulses of from 1 to
10p.sec at a 0.1 to 1 % duty cycle, into an IRED, since shorter times do not provide corresponding
increases in light output and require more sophisticated (and costly) circuits to develop the pulse. The
detector is normally a phototransistor cascode biased * by an ac amplifier of one to three transistors (low
cost I.C. amplifiers are too slow). Synchronous rectification of the ac amplifier output (sychronized by
the pulse generator), allows a significant increase in performance at low cost. Xenon flash tubes and
laser light sources provide highest output but cost and complexity limit these to extremely high
performance systems. Normal cost/performance progressions are: dc operations, no external optics;
pulsed operation, no external optics; pulsed operations with external optics and exotic (laser, etc.)
source systems. Occasionally, commodity plastic lenses may be found that will provide lower cost than
the pulse electronics, but alignment and mechanical sytems cost must be compared against possible
electronics savings.
2.1.5 Precision Position Sensing

Precision position sensing can be done using various techniques, depending on the application.
Some techniques require multiple emitter detector pairs to provide the desired resolution and accuracy.
Normal design practice in multiple path sensing applications is to design the light shield mechanism to
provide a "gray code" output, i.e., each sequence is only one bit different from the preceding one.
One advantage to such systems is that they are not affected by transIents, power loss, etc. They also
require one optical path per bit, with path coding hardware and initial alignment. These can prove
economically impractical in many applications.
However, the availability of powerful, low-cost logic in a system requiring the position sensing
function allows cost optimization by using logic to minimize the number of scanning points. Clever
mechanical design of the scanning area provides the key to optimization.
To illustrate this, a rotary encoder (see Figure 2.14) requires only two sensors to scan the rotating
disc to provide position, speed, and direction of rotation. This information is coded in the T triangle
wave - the slope providing speed, the ratio of instantaneous amplitude to peak amplitude provides
position within 15 0 increments and the phase relationship to the S-wave indicates direction of rotation.
The S-wave output transitions are counted to provide the position to 15 0 increments.
*Biased in this manner, the phototransistor can respond in less than a microsecond. LED current, pulse width and repetition rates can then be
determined strictly from response time, distance covered, LED thermal resistance and cost constraints.
38
RELATIVE RELATIVE
OUTPUT OUTPUT
AMPLITUDE AMPLITUDE
0.5 0.5 SOUTPUT
10 20 o 10 20
DEGREES ROTATION CLOCKWISE DEGREES ROTATION CLOCKWISE
FIGURE 2.14: COST OPTIMIZED SHAFT ENCODER
Linear position information can also come from two sensors. Accuracy and high resolution result
from the use of Moire fringes shown in Figure 2-15. The scale difference is obtained using two grating
scales, as illustrated, or by using two identical scales held at an angle. The two sensors are placed within
112 period of each other.
As one scale is moved in relationship to the other fixed scale, each sensor output goes through a
complete period for a motion of one gradient. The phase relationship between sensors outputs contains
direction of motion, the slope of the waveform provides speed, and the ratio of instantaneous amplitude
to peak amplitude provides distance within a grid. The number of cycles is counted for absolute
position.
Additional advantages of the Moire fringe technique are the use of large area sensor
emitter-detector pairs and the non-critical initial placement of the pairs. Using the H21 module forthe
sensors requires that the individual masks of the grids be less than O.25mm wide, cover a height of over
1.5mm, and the static period ofthe fringe pattern (dark area to dark area) be over 6mm for interrupters
mounted side by side. Spacing the sensors between nand n + 112 periods apart eliminates the last
criteria, at the expense of a more rigid, precise mechanical design.
39
For extremely fine gratings, note that the sensor light path can cover up to 15 % of the static period
with a loss of only about 10% in peak amplitude for 40 % transmission gratings. The static period of the
gratings is the reciprocal of one minus the ratio of grids per unit length, in units of grid length. Example,
with a scale factor difference of 1.5%, the static period is 1 + 0.015=66.7 grids. This can be verified by
counting grids in Figure 2.15. Note that both the space between the gratings and reflectivity of the
gratings can affect the observed phase difference.
Practical production units must be designed to account for those effects, as well as amplitude
differences of signals in the two channels, ambient light and mechanical parameters. Fiber optics can
often be used to advantage in position sensing applications. The small fiber can fit many places discrete
devices would not, and the fiber is not sensitive to the electromagnetic fields found in many sensing
environments. .
100 1
.... SCALE DIFFERENCE
<!>
'""
0
80
0
-oJ
III
60
#
MOIRE FRINGE TEST PATTERN

0
FRINGES
% BLOCKAGE VS. POSITION
MOIRE FRINGES AT 1.5% SCALE DIFFERENCE
."11111"1111111111111111111111111111"'''''''111''
MOIRE FRINGES AT 3% SCALE DIFFERENCE
~1""'IIIIII"".'II"'IIII''''.''fflllll''''''\1
% 1.5% SCALE FACTOR SENSOR CIRCUIT OUTPUT
80
o MOIRE FRINGE TEST PATTERN
OUTPUT SIGNALS FOR

-80 X DIRECTION MOTION
OF ONE SLOT
LYJ
~ ~ FIXED GRATING
;:: III: " ' IlIlllIUIIII.·I.·.·.·.·...•••••••••••••••••••••...•.....\\\ .... \\\ .... '''nu'':::::

~ ~ X DIRECTION:;' MOVABLE GRATING
I-~H B
FIGURE 2.15: MOIRE FRINGE TEST PATTERN
40
Optical scanning via fibers will utilize the same electronic circuitry as without fibers, and requires
loo~ng at the system efficiency associated with the mechanical configurations. Breaking of the fiber
transmiSsion path, to scan for objects that interrupt an I.R. beam may simplify mechanical and wiring
requirements in some applications when compared to air path transmission. This is illustrated by the
three places a fiber path can be intterupted to scan for objects. Using the GFOD/E series and low-cost,
Imm diameter plastic fiber, the effect on detector current of ~isplacing the fiber, along the infrared
beam axis is found to fit a square law equation as follows:
~GFOD
GFOE ·"t::======::::J'-"GAP? .. ~GFOD
.... /GAP...,... ~. Ll4R

GFOE "
EMITTER DETECTOR
1.0
GAP POSITION
A - IRED TO FIBER GAP
B - FIBER TO FIBER GAP
W C - DETECTOR TO FIBER GAP
III
Z
a
Q.
III
'W
It 0.5
W
>
j:
«
..J
w A
It
o
mm
AIR GAP WIDTH
FIGURE 2.16: INTERRUPTION SENSING USING GAP IN FIBER
IRED to fiber gap IC(D) = 15.7 IC(o) -;- (3.96 + D)2 A

fiber to fiber gap Ic(o) = 4.3 IC(o) -;- (2.08 + DY B
fiber to detector gap IC(o) = 6.5 IC(o) -;- (2.57 + D)2 C
where D is the gap in mm
IC(D) is collector current at gap D
and IC(o) is collector current at zero gap
41
TRANSMITTER FIBIOR
-------
RECEIVER FIBER
FIGURE 2.17: TWIN FIBER REFLECTIVE SENSING
Reflective sensing is also possible, but it is much less efficient. In systems with specular (mirror)
reflectance, the distance capability is 113 to 1/4 that of a transmissive system. Diffuse reflectance is quite
variable and effective only at very short ranges. Often the mechanical configuration indicates a twin
fiber system is required. This configuration requires care when unjacketed fibet'S are twinned. The.
cladding of the fiber carries significant energy for a short distance from the source, and this energy may
couple from the transmitter fiber cladding to the receiver fiber cladding. Although this energy is small,
in a reflective system the signal levels are normally very small and this cladding energy can significantly
degrade performance.
42
2.2 OPTOCOUPLER SYSTEMS
The optocoupler, also known as an optoisolator, consists of an IRED, a transparent dielectric
material and a detector in a common package. It has been defined previously in terms of construction
and the various semiconductors which can be used in it. To utilize these devices in a circuit, the
characteristics of the combined component, as well as its parts must be known. Characteristics such as
coupling efficiency (the effect ofIRED current on the output device), speed of response, voltage drops,
current capability and characteristic V-I curves, are defined by the devices used to build the coupler and
the optical efficiency. The detailed coupler specification defines these parameters such that circuit
design can be done in the same manner as with other semiconductors with input,'output, and transfer
characteristics - except that the input is dielectrically isolated. This is the critical difference, the
definition of the isolation parameters and what they mean to the design of a circuit.
2.2.1 Isolation
Three critical isolation parameters are isolation resistance, isolation capacitance, and dielectric
withstand capability. Note that all three are specified with input terminals short circuited and output
terminals short circuited. This prevents damage to the emitter and detector due to the capacitive
charging currents that flow at the relatively high test voltages .
.a. Isolation Resistance is the dc resistance from the input to output of the coupler. All GE
couplers are specified to have a minimum of 1011 ohms isolation resistance, which is higher than the
resistance that can be expected to be maintained between the mounting pads on many of the printed
,circuit boards the coupler is to be mounted on. Note that at high dielectric stress voltages, with printed
circuit board leakage added, currents in the tens of nanoamps may flow. This is the same magnitude as
photodiode currents, generated at IRED currents of up to O.5mA in a typical dual in-line darlington
coupler, and could be a problem in applications where low levels are critical. Normally, care in
selection and processing of the printed circuit board will minimize any isolation resistance problems.
b. Isolation Capacitance is the parasitic capacitance, through the dielectric, from input to
output. Typical values range between O.3pF and 2.5pF. This can lead to noticeable effects in circuits
which have the dielectric stressed by transients exceeding SOOV per microsecond. This would occur in
circuits sensitive to low level currents, biased to respond rapidly and subjected to the fast transients.
Common circuitry that meets these criteria is found in machine tool automation, interfacing with long
electrical or communication lines and in areas where large amounts of power are rapidly switched. The
majority of capacitive isolation problems are solved through one or a combination of the following:
• clean up circuit board layout - especially base (gate) lead positioning;
• use base emitter shunt resistance and/or capacitance;
• design for immunity to noise levels expected;
• electrostatically shield highly sensitive circuit portions;
.• use snubber capacitors coupling the commons on both sides of the dielectric.
This will lower the rate-of-rise of transient voltages and, lower currents into sensitive portions of the
circuit. In applications where these techniques do not solve the noise problem a lower isolation
capacitance is required. Several alternatives exist. In the standard six pin DIP package the HIlAV
series (which contains a > 2mm glass light pipe dielectric) provides the lowest isolation capacitance
(O.SpF max.) available in this package. Where base lead pickup is indicated, the H24 series
optoisolators eliminate the base lead. The ultimate isolation is provided by a fiber optic link, obtainable
with the low cost GFOD/E pairs.
43
'c. Isolation Voltage is the maximum voltage whi~h the dielectric can be expected to-withstand.
Table 2.2 illustrates the parameters that must be defined to qualify isolation voltage capability , which
depends on time, dv/dt, and waveshape. The dependence isa function of the tnethodby which the
coupler is constructed. To illustrate the effect the voltage waveform can have on the isolation capability
of a coupler, a series of tests were run to quantify these effects on both a glass dielectric and a competitive
dual lead frame DIP coupler. ,. ,
The results of the tests were analyzed to determine the percent dIfference in surge isolation voltage
capability that was exhibited by the couplers for the various waveforms applied, as compared to the
specified test method. These percentages were then applied to a hypothetical device that just met a
1000V peak specification. The results were tabulated to determine the "real" surge voltage capability
of this device for each waveform. This was done to allow the circuit designer to determine a realistic
surge voltage derating for each coupler type. Dual lead frame couplers with other dielectric materials ,
and/or dielectric form factors may show different changes in capability with waveform. The glass
dielectric is very consistent in both electrical properties and form factor and performed consistently
from device to device.
TABLE 2.3: SURGE ISOLATION VOLTAGE CAPACILITY OF HYPOTHETICAL 1 OOOV COUPLER
ACZERO~ DC RAMP AC RAMP AC STEP DC STEP

COUPLER
G.E. Glass 707V* 1025 V 650 V 580V 919 V

Dual Lead Frame 540 V 1000 V* 540 V 510V 780 V
*Specification she,et test method.
The tests performed were:

1. AC - rms surge rating per GE definition
*2. DC Ramp - Value at failure when potential
gradually increased from zero - definition
used on competitive device;
*3. AC Ramp - rm~ value at failure of gradually -
increased potential.
4. AC Step - rms value at failure of
instantaneously applied voltage. Application of
voltage synchronized to peak voltage.
5. DC Step - Value at failure of instantaneously
applied potential.
*ramp slope l000V /sec
FIGURE 2.18:
COMPETITIVE CONSTRUCTION. DUAL LEAD FRAME
44
TABLE 2.4: GENERAL ELECTRIC OPTOCOUPLER ISOLATION VOLTAGE SPECIFICATION METHOD
I. Surge Isolation Voltage

a. Definition:
This rating is used to protect against transient over-voltages generated from switching and
lightning-induced surges. Device shall be capable of withstanding this stress a minimum of
100 times during its useful life. Ratings shall apply over entire device operating temperature
range.
h. Specification Format:
Specification, in terms of peak and/or rms, 60 Hz voltage, for a one minute duration.
c. Test Conditions:
Application of full rated 60 Hz sinusoidal voltage for one second, with initial application
restricted to zero voltage (Le., zero phase), from a supply capable of sourcing 5 rnA at rated
voltage.
II. Steady-State Isolation Voltage
a. Definition:
This rating is used to protect against a steady~state voltage which will appear across the device
isolation from an electrical power source during its useful life. Ratings shall apply over the
entire device operating temperature range and shall be verified by a 1000 hour life test.
Specified in terms of peak and/or rms 60Hz sinusoidal waveform.
c. Test Conditions:
Application of the full rated 60 Hz sinusoidal voltage, with initial application restricted to zero
voltage (i.e., zero phase), from a supply capable of sourcing 5 rnA at rated voltage, for the
duration ofthe test.
45
Steady-state isolation voltage ratings are usually less than surge ratings and must be verified by life
test. The GE steady-state rating confirmation tests were performed on devices segmented by surge
isolation voltage capabilities into groups of the lowest voltages that could be supplied to the
specification tested. A destructive surge isolation voltage test was performed at a specified surge rating
to confirm the selection process, and then the couplers were placed on rated 60 Hz steady-state isolation
stress. No failures were observed on the 160 couplers tested for 1000 hours. This consisted of 32 units,
HIlA types, each group tested at a voltage ratio of 800/1060, 1500/2500, 1500/1770,2200/2500 and
2500/4000 (life test to surge test voltage ratio). Note that some of the tests are beyond the rated steady-
state condition for a given test voltage, again confirming the inherent properties of glass dielectric.
The failure mode of a coupler stressed beyond its dielectric capability is of interest in many
applications. Ideally, the coupler would heal and still provide isolation, if not coupling, after breaking
down. Unfortunately, no DIP coupler does this. The results of a dielectric breakdown can range froni
the resistive path,_ caused by the carbonized molding compound along the surface of the glass observed
on glass dielectric couplers,to a metallic short, caused by molten lead wires bridging lead frame to lead
frame, noted on some dual lead frame products. In critical designs, the effects of dielectric breakdown
should be considered and, if catastrophic, protection of the circuit via current limiting, fusing,
GE-MOV®II Varistor, spark gap, etc., is indicated. Some techniques for protection are illustrated
below. Note that film resistors can fuse under fault currents, providing combined protection. Breakover
protection, if feasible, is probably the best choice when a coupler with adequate breakover cat>ability
cannot be obtained. Since breakover protection compromises isolation, fiber optics may prove a better
solution in such cas~s.
FI - - - - - , - ' - - - -...
v, c:n~¢{J
F2 ---------",
R2 FI AND F2 LIMIT MAGNITUDE AND DURATION OF FAULT
RII'R2 LIMITS FAULT CURRENT FROM VI TO V2 · CURRENT FROM VI TO V2.
Resistive Limiting Fuse Limiting
I--I---I-'~'- - ----- - . . . ,
~,O---i
L--t--"1~,;:,, __________ ,,1
GE-MOV®lI
VARISTOR
Braakover Device Protection
FIGURE 2 •.19: METHODS OF LIMITING OR ELIMINATING DIELECTRIC BREAKOVER PROBLEMS
46
Another phenomenon that has been observed in some photocouplers when subjected to dc
dielectric stress is a rise in the leakage current of the detector device. This phenomenon is known as
"dielectric channelling" or as "ionic drift." This rise in leakage is usually observed at high levels of
dielectric voltage stress and elevated temperature, although field reports indicate the phenomena has
been observed at dielectric stresses as low as 50Vdc in some brands of couplers. The phenomenon seems
independent of normal HTRB channelling, since it appears only under dielectric stress and nof Qnder
detector blocking voltage stress. The cause is hypothesized to be mobile ions in the dielectri.cmaterial
that move to the detector surface under the influence of the voltage field generated by: the diele~tric
stress. At the detector surface, the field produced by these ions would cause an inversion layer (similar
to that formed in a MOS field effect transistor) to form in the collector or base region oftlie d~tector and
carry the leakage current. The GE coupler glass dielectric has b~en·cle~~gn~d to be as ion f~e as possible
and the detector devices (which are optimized for minimum susceptabi~"ity to the formation of inve.r~ion
layers) have proven to provide a stable, reliable and highly reproducible coupler design. Tests
performed on these devices at stresses up to 1500V and 100°C produced no significant change in
detector leakage.
2.2.2 Input, Output and Transfer Characteristics

The complete optocoupler has the electrical characteristics of the IRED and the detector at the
input and output, respectively. Since the individual devices and the dielectric characteristics are known,
emphasis will be on the transfer characteristics of the coupler. Some specific device characteristics are
also detailed to provide the information required for a complete analytical circuit design.
a. Input The input characteristics of the coupler are the characteristics of an IRED - usually a
single diode, although the HIIAA has an anti-parallel connected, two IRED input. The forward voltage
drop, V p, is slightly different than that of the discrete IRED previously diSCUSsed, due to differences in
wiring and contact details. Figure 2.20 illustrates this for all GE coupler types. In. pulsed operation
;""':
100
en 50
':i
0
> 20
lLI 10
(!)
« GaAIAs ./'"
..,',,'
I- 5
-- --
..J
0
>
c 2 "' ... ...·GaAs-
'"
a:::
<[. ~-
~ 100p.SEC Ip.SEC--.
a:::
0 0.5 PULSED OPERATION REGION_
IJ.. 100 Hz REPETITION RATE
~ 0.2
I
10- 3 10-2 10- 1 10
I - INPUT CURRENT - AMPERES
FIGURE 2.20: TYPICAL OPTOCOUPLER INPUT CHARACTERISTicS - VF VS.IF AT 25°C
significantly higher currents can be tolerated, but close control of pulse width and duty cycle are
required to keep both chip and lead bond wire from bias conditions which will cause failure. The
temperature coefficient of forward voltage is related to the forward current and is of small magnitude as
it changes Vp by only about ± 10% over the temperature range.
47
-2.6
u
o
~
E -2.4
""
I
~ -2.2
UJ
U
i: -2.0 ~ (
"- ~
r-..
~
UJ
o
u -1.8
UJ ...............
---
ex:
:::> ~ .......
!;;[ -1.6
ex: ....
UJ
Q. -1.4
::E
UJ
I- -1.2
.1 .2 .4 .6 .81.0 2 4 6 810 20 40 6080100
IF - FORWARD CURRENT - mA
FIGURE 2.21: IRED FORWARD VOLTAGE TEMPERATURE COEFFICIENT
The GalAs IRED of the new HI lAG is quite similar to the GaAs IRED used in previous
introductions, in terms of input characteristics. It exhibits a slightly higher forward voltage drop
(typically 0.1 V more from about 1 to 100 mA bias) with a similar temperature coefficient of forward
voltage. The input capacitance, speed and reverse characteristics are quite similar to GaAs types. The
outstanding advantage of the GaA 1As IRED is the 3 or 4 to 1 improvement in transfer efficiency due to
better radiation efficiency and detector responsivity. This improvement allows specification and
application of the optoisolator down to input bias currents of 200ILA and simultaneously provides
current transfer ratios exceeding 100% over the 0 to 70°C temperature range.
The stability and predictability of the IRED forward voltage drop lends itself to various threshold
(like H 11 A I 0) and time delay applications. Threshold operation is accomplished by shunting the IRED
with a resistor such that VF isn't reached until the input current reaches the desired threshold value for
turn-on. This type of application is documented in the specification of the HllAIO.
-
lOUT I
r------ ---I
Hllll 6
:R'~ ~ r-.~---~.~~:
I . ,
I . \\ 1---'--14- - - { )
I /l/ \l.. I
, 1
I I I__________ .J OUTPUT
3 I I 4
° I
I
~--o---~~~ (~ 5
L_...,.. HIIAIO
______ ...JI
FIGURE 2.22: CURRENT THRESHOLD OPERATION OF OPTOCOUPLER
The HIlLl Schmitt trigger output optoisolator gives a more precise current threshold than the
HllAIO, with fast rise and fall times on the output waveform. This is due to the low turn-on threshold
current, the IRED current and voltage, and the hysterisis - all of which have 0° to 70°C specification
minimum/maximum limits. Time delay turn-on can be accomplished by shunting the LED with a
capacitor in applications where a slow turn-on and turn-off can be tolerated. In speed sensitive, time
delay applications, the trade-off between time delay at the input with a Schmitt trigger output vs.
incorporation of the time delay in a discrete Schmitt trigger circuit must be evaluated for cost
and performance.
48
+ R
" " " " - - 0 lOUT
TIME DELAY FROM APPLICATION OF VIN UNTIL lOUT FLOWS

VIN
td '" RC In VIN _ 1.1
FIGURE 2.23: TIME DELAY OPERATION OF OPTOCOUPLER
The input capacitance of the optoisolator is IRED junction capacitance. It is a function of bias
voltage and, although normally ignored, has an effect on the tum-on time ofthe IRED. As the IRED is
forward biased, its capacitance rises. The charging of this increasing capacitance delays the availability
of current to generate light and causes a slower response than expected. In the liquid epitaxial-processed
gallium aluminum arsenide and silicon-doped gallium arsenide devices, this effect is noticeable only at
low drive currents, while rise time effects due to minority carrier lifetime dominates tum-on time at
currents over a few milliamperes.
100
LL
Co
ILl
U
Z
«
t:
u 10
«
Il.
«
u
ILl
C
0
0
o -I -2 -3
FORWARD BIAS VOLTAGE - VOLTS
FIGURE 2.24: IRED CAPACITANCE AS A FUNCTION OF BIAS VOLTAGE
To minimize both effects when optimum rise time is required, the current waveform to the coupler input
should have a leading edge spike, such as that provided by a capacitive discharge circuit .
. b. Signal Transfer Characteristics The heart of the transfer characteristics of an optocoupler is
the photodiode response to the light generated by the input current. In all isolators, the output is the
combination ofthe photodiode response and the gain characteristics of the detector amplifier. With the
transistor and darlington couplers, the photodiode characteristics are available in the collector-base
connection and can be measured and utilized. Note that to use the photo-darlington as a photodiode, the
49
emitter of the output section must be open-circuited and not shorted to the base as can be done with a
single photoU"ansistor in this mode. This is because the base of the output transistor is not electrically
accessible, so when the darlington is connected with a base emitter short, it acts not as a photodiode, but
as a photodiode in pafallel with a low-current-tran~fer ratio (ratio of output current to input current)
phototransistor.
p.A
VCI =0.5V
30~______~IF_=_10_m_A____ ...
III
II:
T" = 25·C
~ 10-51----+---+--~~~~
25 :;
<t
'20 I
Ii: 10-41---+--~~~~---+-----l
ICI IF = 5mA
15&.+-------:...------ ...
II:
II:
10 ::>
10-&f------h,........~oIf-----l--_t_-____l
...o::>
......
::>
IRED
-3 -2 -I I 2 3 4 5 6 VOLTS ...oc 10-sl---+-.H-."-' ,
2
REFLECTOR
REFLECTOR
GeAIAs
GeAs
-5 Vca o 3 SANDWICH GeAs
C5
eo 10-7J1-J~~
4 LIGtfT PIPE GaAs
-10
-15 ...
:I:
DC
MEASUREMENtS
I I I I
SO,. SEC. PULSE
MEASUREMENtS
-20 10-3 10- 2 10-1 10

INPUT CURRENT TO IRED- AMPERES
Characteristic Curves Transfer Curves
FIGURE 2.25: TYPICAL OPTOCOUPLER TRANSFER CHARACTERISTICS - PHOTO DIODE RESPONSE

OF PHOTOTRANSISTOR AND PHOTODARLINGTON, COUPLERS
The photodiode response plot of Fig. 2.25 also illustrates the efficiency of various construction
alternatives. The most efficient coupling is provided "y utilizing the superior efficiency of the GaA lAs
IRED combined with the improved optical path of the reflector package. The least efficient illustrates
the relative disadvantage of the wide spacing of the light pipe construction using the proven GaAs
IRED. It also illustrates the more efficient coupling provided by the reflector design, which takes
advantage of the fact that about 3/4 of the energy emitted by the IRED pellet comes from the sides of the
die, which reflects side light down through the dielectric onto the detector die.
2.5,..-----.----,-------.----,-----,-----,
...z
...
II: ' NORMALIZED TO:
2.0 I--'-"~-+----+-----t---- 14:. =10V VALUES
!!i t
~ TA =25°C {
c
o
(5
o
b
...
:I:
~ 1.0f----_t_---t_--'=...,o;:;;;::---t_---t-----i
N
::;
<t
:;
II:
~ .5f----_t_---t_--_t_---t_~
I
o
~
O~--~---~--~---~--~--~
-50 -25 0 25 50 75 100
AMBIENT TEMPERATURE - ·C
FIGURE 2.26: PHOTODIODE TRANSFER CHARACTERISTICS TEMPERATURE VARIATION
50
More complex output devices do not normally have the photodiode output available. The bilateral
analog FET has photodiode action from either of the output terminals to the substrate, but provides
lower output current than the phototransi&tor. The photoSCR exhibits phototransistor action from anode
to gate. The triac trigger devices have phototransistor action from substrate to either output terminal.
The Schmitt trigger detector has no external linear output due to photodiode action because the
photodiode is part of a complex circuit.
In the SCR coupler, the pnp portion ofthe device from anode to gate activated by the photodiode
can be monitored and utilized in both forward and reverse directions as a symmetrical switch for low
currents at voltages up to rated voltage. High power dissipation is possible in this configuration, so care
must be exercised to avoid exceeding the dissipation ratings of the device.
I - /LA
'" 1 0 - ' r - - - - - . - - - . - - - - . - - - - - , - - - - - - - , If - 30mA
ILl 300
a:
~ 10-2f------+---+----+---:7""""+:._----i IF - 20mA
200
«,
0. 10-3 f-----f----+-__=_ If -IOmA
Z 100
0.
:s... 10-4f-----f----
V - VOLTS
Z 100 200
ILl
~ 10-"f-----+-
::>
"5 10-6 f----------c..4-.~-- (ANODE TO GATE REGION
CATHODE OPEN)
...
0.
:::l
o 10-7~.L.4~-"-:::---- _ _-,-=-_ _----'---;--_ _--'--_ _---'
10-4 10-2 10-' 10
INPUT CURRENT TO IRED - AMPERES
FIGURE 2.27: CHARACTERISTIC CURVES - PNP PHOTOTRANSISTOR ACTION OF H11C SCR OPTOCOUPLER
Using a unijunction transistor to pulse the IRED allows the SCR coupler biased in this mode to
trigger triacs and anti-parallel SCR's without a bridge of rectifiers and its problems associated with
commutating dv/dt. It is also useful for switching and sampling low level dc and ac signals since offset
voltage (the prime cause of distortion) is practically zero. Temperature coefficients of both the
photodiode response and the pnp response will be negative, as both primarily indicate the incident light
and illustrate the decrease in IRED efficiency as temperature rises.
c. Phototransistor The phototransistor response is the product of the photodiode current and the
current gain (hFE; (3) of the npn transistor. The photodiode current is very slightly affected by
temperature, voltage and current level, while the transistor gain is affected by allofthese factors. In the
case of temperature, the gain variation offsets the temperature effects on IRED efficiency, giving a low
temperature coefficient of IRED-transistor current transfer ratio (CTR). Due to voltage and current
effects, this temperature coefficient will vary with bias level as illustrated in Figure 2.28. As different
manufacturers use different processes in IRED, phototransistor and coupler manufacturing,
considerable variation in the CTR temperature coefficients is found from manufacturer to
manufacturer.
51
10 10
8 NORMALIZED TO: 8
6 VCE= 10V 6
4 IF= 10mA ~ 4
IF = 20mA TA= +25"C
~
~
ffi
~
w
a::
a::
a
2
1
""'" IF -10mA
- a::
a::
a
2
1.0
~
I-
0.8
0.6
5 8.0
Vce-5V, IF =lmA
::>
IF = 5mA ~ 6.0
VCE=I.5V, I F=lmA
-
~ Q.4 ::> 4.0 VCE=O.6V, I F=lmA
::> o NORMALIZED TO:
o Q
VCE=5V
Q 0.2 ~ 2.0
w :::;
...... r,=lmA
-
IF 2mA
-
N A=25·C
:::; ~ .1
--
« .1 0
--
a:: .8
-
:;; .08
~ .06 ~ .6 ---.;::
z .04 IF = lmA b .4
::--; ::-- VCE=5V, IF=O.2mA
~ VCE=I.5V,
w I F=0.2mA
.02
i"'---- .2
.2 VCE=0.6V, I F=O·2mA
.0 1 -50 o 75 100
.0 1 J
-25 25 50 -50 -25 o 25 50 75 100
TA - AMBIENT TEMPERATURE _·C TA-AMBIENT TEMPERATURE-·C
(a) GaAs IRED (b) GaAlAs IRED
FIGURE 2.28: BIAS EFFECTS ON CTR TEMPERATURE COEFFICIENT
Dynamic response of the phototransistor is dominated by the capacitance of the relatively large
photodiode, the input resistance of the transistor base-emitter junction, and the voltage gain of the
transIstor in the bias circuit. Through Miller Effect, the R-C time constant of the phototransistor
becomes: input resistance x capacitance x voltage gain. The penalty for a high gain photo-transistor is
doubled. High gain raises both voltage gain and the input resistance by lowering the base cument. The
same dual penalty is extracted when a lower operating current and higher load resistor are chosen. These
effects can trap an unwary circuit designer, since competitive pressures have driven specification sheet
values of switching times to uncommon bias conditions. These uncommon bias conditions include very
low values of load resistors with fractions of a voh signal level changes. While this provides an idea of
ultimate capability, it also forces the designer to carefully evaluate each situation.
~ 10- 1 r-------t------t-----:::--t-----=~.....---___j
w
a..
~ 10-2~----r_---
I-
~ 10-3~----+_~~~~
0:
0:
::l
U 10-4r---~~+_~---~----
I- 80fLSEC PULSED DATA
ir TA = 25"C
;; 10-5 VeE = IV
o -~-~-------~
10-3 10- 2 10- 1 10

INPUT CURRENT TO IRED - AMPERES
FIGURE 2.29: TYPICAL PHOTOTRANSISTOR OPTOCOUPLER TRANSFER CHARACTERISTICS
52
~ 10 ~ 1.50,.---,-----,----,--,---,-------,
--
:e 8 ~
I- 6 r--.... I l-
u..
u.. 4 I'...
....... 1- I II ll.
u..
1.251----f"ooot---t----t--+---
,
o
z
a::
~ 2
I"~ .......
--RL=IKn o
z
g; 1.00
o
z
« 1.0
'"......1'1"-~
I'... .........
l-
e
~ .75~-1i~~1f~~~::t:::::4=::~
z .8 .......
~ .6 ....... o
a::
~ .4
NORMALIZED TO: ......... , t--r--... RL = loon-
z
g; .501-~~-~~--~-
RBE = ron
VCE = 10 VOLTS I" I-
e .... j'-... o NORMALIZED tOFF IF = 10mA
I.IJ ICEO = 2 mA RL = Ion
!::::! .2 r- tON = tOFF = 3 fLSEC I ~ .25 F--'<---1--''- FOR IF = 10 mA --tON = tOFF = 5fLSEC
..J ..J NORMALIZED tOFF
« RL = loon 1'1
~
:e I I I FOR I F = 20mA
~ .1 .2 .4.6 .81.0 2 4 6 8 10 20 40 60 100 ~ 0 10 20 50 100 200 500 1000
z z RBE - EXTERNAL BASE RESISTOR - Kn
I CEO - OUTPUT CURRENT - mA
Switching Times vs. Output Current Switching Tima vs. RBE

FIGURE 2.30: BIAS EFFECTS ON PHOTO TRANSISTOR SWITCHING SPEED
Some applications will require speed-up techniques, such as base emitter shunt impedance, linear
or cascode biasing of the phototransistor, capacitor discharge pulsing of the IRED, etc. Highest speed is
obtained from the photodiode alone, biased from a stiff voltage source, with the IRED pulsed at as high a
current as practical. In this mode of operation, response is dominated by the IRED and photodiode
intrinsic properties and can be under 0.2/Lsec. Use of a load resistor in the photodiode requires charging
the photodiodes capacitance (25pF at OV, typically) with the associated R-C time constant.
Leakage current of the phototransistor must also be considered (especially if the base is
open-circuited) when high temperature operation and/or low current operation is desired. The
photodiode leakage current (typically 200pA at lOV, 25°C) will be about 200 times this at 100 °C. In the
open base bias mode, this current is multiplied by beta, which also increases with temperature. This
combination of effects raises a typical2nA ICEO at lOV, 25°C to 4/LA (2000 times) at lOY, 100°C.
Consider the effect on a circuit, which operates at a 100/LA phototransistor current, with a device having
the specified maximum leakage limit, 100nA at 25°C, when the ambient temperature rises. The use of a
10 megohm base emitter resistor would allow the worst case unit to operate normally without
appreciable effect on the CTR. Leakage and switching speed effects must be considered before opting
for operating open base. Higher operating voltages and/or a time varying dielectric stress (which
provides capacitive base current drive) are additional factors which can cause undesired leakage
effects.
The availability of the HI lAG series phototransistor coupler with GaA1As emitter minimizes the
problems encountered,of low input currents and high temperatures. Due to the high efficiency of this
series, photocurrents in the photodiode detector are increased by about 4 times. As leakage currents are
not affected by the more efficient design, this directly translates to an improvement in capability. This
improvementis illustrated by the specification guarantees of200/LA input current operation over the 0 to
70°C temperature range.
d. Photodarlington The photodarlington adds the effects of an additional stage of transistor gain
to the phototransistor coupler. The changes in CTR, its temperature coefficient, leakage currents and
switching speed are extended from the photodiode-phototransistor relationships, and will not be
detailed. Instead, the two major application areas where the photodarlington optocoupler is attractive,
low input currents or at very high output currents, will be examined for device characteristics and their
interaction with application performance.
53
],. . [qf:
HHB
----. --,-
, .
I .
1
I _ _ .-_-1'
L
'/
A!
A. PHOTO DARLINGTON
H11G
r---
],. Lie SOp.SEC PULSED DATA
VCEO = 2V
TA = 25·C
V'I
IL ___ _
B.PHOTODARLINGT(m WITH
f 10-3 10-2 10- 1 10
INTEGRAL BASE EMITTER
RESISTOR INPUT CURRENT TO IRED - AMPERES
FIGURE 2.31 : TYPICAL PHOTO DARLINGTON OPTOCOUPLER TRANSFER CHARACTERISTICS
The high gain ofthe darlington pennits useful output currents with input currents down to O.5mA.
Both current gain and IRED efficiency drop very rapidly with increasing current, as illustrated in the
emitter and detector systems section. These effects indicate that for very low input currents, i.e., below
100 to 500JLA, better perfonnance in output current to leakage current ratio, can be obtained withcthe
phototransistor coupler (although effort is required to get even fair perfonnance at such low input
currents, regardless of the'output device). This defines the low input current operation region as roughly
between O.3mA and 3mA input current, and the high current output region at above 3mA input current,
i.e., where the output current is in the tens and hundreds of rnA.
Operation in the low input current region with a photodarlington output optocoupler provides
minimum output currents in the,O.lmA to IOmA range at 25°C. High temperature leakage currents
(leBO) can also be in this range and the rise in output current with temperature does not approach the rise
in leakage current .. This effect indicates the need for a base emitter resistor in circuits which must'
10r-----~-------r------.------r--~
....
z
....Z
LlJ IF = 2.0 MA
~ 105 NORMA LIZ ED TO: --t------+------+--7I"~ a::
a::
a::
::;) VCE = 10V ::;)
u
u
LlJ 104 TA = + 25·C ----+------t--~~I_--_i
C) IF" 0
<l
~ 1031------+------r----~~
LlJ
...J a
LlJ
~ 102r_----.--+-----~~~~~ N
N :::i
:::i ~ .11----__~-------b------~-----b--4
~ 10r-------+---~~~~_+----~r_--4
a::
a:: o
o z VCE = 5V
~ 1.0r_------~--~~----_+----~r_--~ IF =1.0MA
...
,U
0.1 L-______L -_ _ _ _--'-_ _ _ _--L____--'L-__...J

o
OJ
u
....01L-~
TA = +25·C
__~_______ L_ _ _ _ _ _~_ _ _ __ L_ _...J
o +25 +45 +65 +S5 +100 -55 -15 25 65 100
TA'- AMBIENT TEMPERATURE _·C TA - AMBIENT TEMPERATURE - ·C
Leakage Current Output Current
FIGURE 2.32: TYPICAL TEMPERATURE EFFECTS ON PHOTODARLINGTON OUTPUT
54
operate at high temperature. The resistor can be external and/or integral to the darlington structure.
With external resistors, the value selected for the resistor becomes a trade-off between minmizing the
effect on output current, maximizing the effect on leakage current, and choosing a commonly available
resistor. Usually, the result of the trade-off is the use of a 22 megohm resistor with the circuit designer
providing more drive for the IRED, an alternative preferable to using a non-standard or series
combination of resistors. Observing the photodiode response, and noting that VBE can be 1. 3V , the 22
megohm resistor eliminates response on a typical unit for input currents less than 1I4mA, which, in
worst-case analysis, makes the reason for providing more input current obvious. It also illustrates
another reason for using a transistor output coupler in some of the lowest input current applications. At
low temperatures, these phenomena make the darlington more attractive: leakage current has
decreased, making a base emitter resistor unnecessary; IRED efficiency has increased and darlington
gain has dropped, producing an output which is more a function of the input than the output
device characteristics.
The integral base emitter resistor, as found in the H 11 G series, shunts the output stage base emitter
of the photodarlington. It provides most of the advantages of an external resistor without the need for an
additional component. Also, since the semiconductor design engineer can quantify maximum leakage
levels, this resistor allows the photodarlington voltage and current capability to be simultaneously
increased without danger of thermal runaway due to leakage currents. The HllG45 and HllG46
specifications illustrate the improvement of low current performance provided· by the internal base
emitter resistor. These devices are specified for operation at 112 rnA input current, and maintain both
high current transfer ratio (;;:= 350%) and low leakage (s 100p.A) over the 0 to 70°C temperature range.
At higher. current and voltage bias conditions, a comparison of the HllGl with the HllBl, a
photodarlington without integral resistor, illustrates the advantage. The HllGl has 50% more current
capability (l50mA) and four times the VCEO capability (IOOV). The integral resistor also provides an
antiparallel diode between collector to emitter. This can be used to advantage for ac current switching
using two detectors in inverse polarity series connection. The diode is of relatively low current
capability, and its power dissipation must not be exceeded when operating in this mode.
Switching speeds in the low input current bias region ar~ quite slow, and are decreased further by
the large load resistors common for these biases. Some bias conditions have been reported where the
photodarlington would not switch (full on to full off) at a 60Hz rate. The major point to note is that
dynamic effects as illustrated in Figure 2.33, exist and.must be allowed for in the early stages of circuit
design and development.
<l
100r....--~,-::-::~~c-::-::-------,-------,
NORMALIZED TO: ~ 120

140
TYPICAL PHOTODARLINGTON I
OPTO I
SATURATION CHARACTERISTICS
~«,«,~~ ..
V. «, ~~"'~~~'"
~
~,O c:.,O
~E=~V
~~~~~~~~~
1
E I Ic VS VCE
~ Rl = loon ~ 100
AT
",~~«,'t-'----
~ 10/---~.----+----lcEO = lOrnA ILl
<r
IF = 20 rnA #
...'«' V
<r
!
a.
I
isI- 1 . 0 / - - - - - - I - - V I r - * - - + - - - - - - - j
:::l
u
<r
~
u
60
ILl
.J
80
....::; ~'7
9;;'«'
$
~v
~
rj'{j
6 40
I
o u ",'«' V
'"
~OFFSET VOLTAG~'
I
~
" 20
REGION
0·bL. I - - - - - - - " 1 . 0 - - - - - " ' " 1 0 - - - - - - - . . . 1
100· o
o 0.5 1.0 1.5 2.0
NORMALIZED SWITCHING SPEED VeE - COLLECTOR EMITTER VOLTAGE - VOLTS
Id + Ir + Is + If
FIGURE 2.33: PHOTODARLINGTON SWITCHING SPEED AS FIGURE 2.34: TYPICAL PHOTO DARLINGTON OPTOCOUPLER
A FUNCTION OF BIAS SATURATION CHARACTERISTICS
55
Operation of the photodarlington optocoupler at high output currents from low supply voltages has
few pitfalls. Leakage, temperature, and dynamic effects are less critical due to nonnal bias levels.
Current levels can be sufficiently high such that power dissipation can become a concern when driving
low impedance loads , such as solenoids and small lamps. Saturation resistance and offset voltage are the
prime factors which govern the power dissipation in these applications. Typical values for saturation
resistance, up to Ie = 100mA, are in the 4 to 8 ohmrange. Typical offset voltage can be approximated
by the· 1OmA collector current saturation voltage, which ranges from O. 8V to 1.1 V . Power dissipation in
the saturated photodarlington can now be approximated by:
Pd ~ Ie (VOFFSET + Ie RSATURATION).
For steady-state loads this corresponds to a maximum collector current limited by the 150mW
maximum rating. In pulse applications, the decrease in photodarlington gain with increasing current,
limits usefulness at high collector current. Since saturation resistance and gain rise with temperature,
while offset voltage decreases, the dominant effect will depend on the collector current, the input
current magnitude, and the transistor junction temperature. In high current pulsed operation,
self-heating effects (in the IRED by reducing its efficiency, and in the darlington by raising the
saturation resistance) can cause the observed saturation voltage to rise throughout the duration of the
pulse. In higher supply voltage applications, above 25V, power dissipation due to leakage currents must
be analyzed for thennal runaway. .
e. PhotoSCR The photoSCR optocoupler differs from other SCR' s due to the very low level gate
drive available from the detector. This low level gate drives requires a very sensitive gate structure,
while application constraints demand a SCR capable of operation on 120 and 240V ac lines, biased from
a full wave rectifier bridge. These needs conflict and require the SCR chip design, processing and
application to be carefully controlled. The success of the HllC series is a tribute to GE's superior
technology in SCR's, IRED's, and optocoupler assembly being successfully combined. The SCR
optocoupler requires the circuit designer to consider the trade-off between optical sensitivity and
sensitivity to dv /dt, temperature, and other undesirable effects. It also presents the circuit designer with
a new effect, coupled dv/dt, where the rapid rise of voltage across the dielectric isolation capacitively
supplies gate trigger current to the SCR. Due to the physical construction of the coupler, this could occur
in either stress polarity, although highest sensitivity is with the IRED biased positive. These effects are
not as fonnidable as might be anticipated, since the low currents at which the SCR is operated make the
protection techniques identical in both method and typical values, to those required in most common
low current SCR applications. Pulse current capability of the SCR is superb, making it ideal for
capacitor discharge and triggering applications. Complete isolation of input and output enables
anti-parallel and series connections without complicated additional circuitry. This facilitiates full wave
ac control, high voltage SCR series string triggering, three-phase circuitry and isolated power supply
design.The H74C series coupleris specified to drive 1201220Vac loads with input signals directly from
TTL logic.
A knowledge of the SCR tum-on parameters eases analytical circuit design. The current into the
IRED (1FT) required to trigger (tum-on) the SCR, is the principle parameter and approximates the
current required to increase detector current enough to provide a diode drop of voltage across the
gate-to-cathode resistor (Ra0. From this the relationship ofIFT to RGK is inferred, i.e., higher RGK ,
. lower 1FT . As RaK also shunts currents generated by leakage, rapidly rising voltages across the junction
56
or isolation capacitance and stored charge during tum-off, it becomes obvious that a trade-off exists
between optical trigger sensitivity and suspectibility to undesired triggering and ability to tum off.
Tum-off is related to the holding current, IB' the minimum anode current that will maintain the SCR in
conduction. Because it is normally desirable to have the SCR tum-on with minimum IRED current,
while being completely immune to dv/dt and other extraneous effects, and preserve dependable, rapid
turnoff, the choice of a fixed value ofRoK becomes a compromise. Use of active devices in the place of,
or in addition to, ROK can provide the best solution, but at the price of additional circuit complexity.
iiI-
Wz
"w
520:: dv/dt
0::0::
I-~ 100~-~~~---~--_+---__l---_+---~
OU
1-"
Z
~o
w-l 10
0:: 0
0:::I:
~o
Uz
I-e:(
~>-
0.1-
i!::J
aiD NORMALIZED TO:
We:(
IH @ RGK = 10K, TA = 25°C
!:::!~ 0.1 1FT @ RGK = 10K, TA = 25°C ---i-----t---__l--~___j
<t:::E-u dv/dt @ RGK = 10K, TA = 25°C
o::~
0>
z'" 0.01 L -_ _---'-_ _ _---:L-_ _----L_ _ _ _L.-_ _----L_~_ ___l
~ ~O ~ 9 mK 30K lOOK
GATE TO CATHODE RESISTOR - OHMS
FIGURE 2.35: TYPICAL EFFECT OF RGK ON 1FT. dv/dt. AND IH OF H11C SCROPTOCOUPLER
Circuit component cost could be decreased through the techniques shown in Figure 2.36 by using a less
costly coupler and less elaborate drive and snubber circuitry. Three examples of this type of gate bias are
illustrated. The gate capacitor is simplest, but only affects dynamic response and is of limited use on dc
::r=--~
I
I
HIIC
L ______ ...l
I
'"".+-,-0--...._....
:rr~--; HIIC
~~
L ____ _ _ -l
I
I
I
I
I
1M
75K DHD 800~

~ 56 K
Gate Capacitor Zero Voltage Switching Reverse Gate Bias
FIGURE 2.36: METHODS USED TO OPTIMIZE RGK EFFECT
orfu11 wave rectified power. The zero voltage switching is the most effective, since it places a virtual
short circuit from gate-to-cathode when the anode voltage exceeds approximately 7 volts. At low
voltages, the SCR is quite immune to most of the effects mentioned, and yet optical triggering
sensitivity is relatively unaffected. This circuit is limited to applications where zero voltage switching is
compatibl~ with performance requirements, of course. The reverse gate bias method is generally
57
applicable to a wider range of circuit applications and provides somewhat better. than a 2: 1 performance
advantage over a simple resistor. It also improves turn-off time and is of particular advantage when the
SCR is used on full wave rectified power sources. When gate-to-cathode resistors of over 10K are used,
the high temperature operating capability of the SCR will be compromised without the use of some
circuit which will perform similar to these. High junction temperatures,are associated with either high
ambient temperature or power dissipation caused by current flow, leading back to the compromise
between input current magnitude and circuit simplicity. The ultimate in performance combines both
techniques in one circuit-but also again limits application to zero voltage switching.
Ifvery low drive currents are available for the IRED, and precise phase control is not required, the
input current can be stored in a capacitor which is then discharged through the IRED periodically. A
programmable unijunction circuit, using aO.2JLF capacitor charged to 8V and discharged at Imsec.
intervals draws less than 2mA average current and will turn-on a HllCI with a lK ohm ROK ' Other
methods o(overcoming the sensitivity compromise will undoubtedly suggest themselves to the circuit
designer, and may prove to be higher performance, less costly, or both. To aid in the analysis of
dyn,amic effects, typical capacitance values of 25pf anode-to-gate and 350pf cathode-to-gate are noted
on the HIIC photocoupler and the typical gate-to-cathode diode voltage drop is approximately 0.5V
with a negative temperature coefficient of approximately 2mv/oC. .
Use of the photoSCR coupler on dc circuits presents no new problems. DC stability of the GE
glassivated SCR pellet is excellent and has been proven in both the lab and field at voltages up to 400V.
Commutation or other turn-off circuitry is identical to that detailed in the GE SCR Manual and a
maximum turn-offtime of 100JLsec is used to calculate the commutation circuit values. Pulse current
capability of the H 11 C photoSCR coupler output is rated at lOA for 1OOJLsec. In conjunction with the
50AI JLsec, di/dt capability (di/dt indicates the maximum rate of increase of current through the SCR to
allow complete turn-on and, thus, avoid damaging the device due to current crowding effects) of the
HIIC, it is capable of excellent capacitor discharge service.
For general pulse applications, the power dissipation may be calculated and used in conjunction
with the pulse width, transient thermal resistance, and ambient temperature to determine maximum
junction temperature, since the junction temperature is the ultimate limit on both pulse and steady-state
current capability. A more complete explanation of this method of determining capability may be found
in the GE SCR Manual 'and its reference material.
f. Bilateral Analog FET Optoisolator The bilateral analog FET optocoupler consists of a
symmetrical, bidirectional silicon detector chip, which provides the characteristics of a bidirectional
FET when illuminated, closely coupled to an infrared emitting GaAs diode source. The re'sulting
photocoupled isolator provides an output conductance thatis linear at low signal levels. The value of
conductance is electrically controlled by the magnitude Of IRED current over a range of from a few
nanomhos to a few millimhos (1080 to 100). The stability of conductance is excellent, as expected from
a silicon device. At higher bias voltages the output device current saturates at a value roughly
proportional to the IRED current and remains relatively constant out to the breakdown voltage of about
30V. As the shunt capacitance of the detector is low (""" 1Opt) and the VI characteristics exhibit a very
small offset voltage at zero current, the detector can be viewed as a remotely variable current controlled
resistor for low level signals.
58
In circuits, the bilateral analog PET optocoupler can act as a nearly ideal analog switch or as the
foundation for compression or expansion amplifiers with superb performance. The bilateral, low and
high voltage characteristics are best understood by examining the detector V-I curves at appropriate
voltage levels as a function of IRED drive. These can then be related to curves that define the maximum
signa1level for which output conductance is linear and the effects of IRED current on both output
conductance and output current at high bias voltage. Note that these plots are based on pulse
measurements, and the effects of IRED self heating due to power dissipation must be considered in
steady-state operation. The region of linear output conductance can be illustrated in several ways,
oor----,----,--------,
NORMALIZED TO NORMALIZED TO
IF; 16mA IF=16mA
TA; 25°C TA = 25°C
V46 =15mV V46 = 0
I.U
~
~ 10~~._--+----~---_4
...
Z V>
I.U u;
a: I.U
a:
~ a:
u o
....
e :.l
...
....~ D!--!---!----,=#-..::;;..-+---+---f ~ 1~---~~--4_---~
-'
i!l I.U
>
c I.U
'"
N
:;
-'
~
I o
i!l
:;
<r
O,I~---+---~
::lE
:sz
-1.5 '--_-;,2""0-~_1""0L-'-----;0!,-------;1;;-0~----;2t;,0-----' 0.01\-1---~IO:-------;iIO\nO-----.!.IK

DETECTOR VOLTAGE - m V IRED FORWARD CURRENT-mA
a. LOW LEVEL V·I PLOT

100,------....------,-------,
NORMALIZED TO /40mA NORMALIZED TO
I(
IF = 30mA
IF=16mA IF = 16mA
TA = 25°C TA = 25°C
V46 = O.IV V46= O.IV
JmA
....z ~ 10r----+----~~
'"a:~
I
'f '"cr
0:
:=J
u LA ...
U
:=J
cr
g '/ 5mA
...
0..
:=J
u
~ 0
I.U
0
5mA IF =0
:s...
o
11-----~~--4_---~
C u
o 10mA ...
w
''"
w
:::! c
-' C
<r I.U
::lE J ':::!
ocr - I -'
z 20ri.A ./ ~ O.l~_tI''---+_---_+---__l
:sz
2 30L
)
40mA
O·OI!""I---~10;-------;c10*'0.,-·- - - - T . I.K
-400 - 200 0 200
O"TECTOR' VOLTAGE-m V
400
IRED FORWARD CURRENT-mA
c. HIGH LEVEL V·I PLOT d. OUTPUT CURRENT VS. IF

FIGURE 2.37: BILATERAL ANALOG FET CHARACTERISTICS
although for circuit design, the most useful is defining maximum signal voltage or current and
maximum Thevinen equivalent source voltage and resistance. Linear operation limits are determined
utilizing a balanced bridge technique in which signal level is increased until detector nonlinearity
unbalances the bridge and causes a proportionate output signal-usually 0.1 %. Offstate impedance of
the detector is determined by junction leakage currents and capacitance. Leakage current is typically
100pA at 15V and 25°C, or equivalent to 150g0, and rises an order of magnitude for each 22°C
temperature rise. Junction capacitance is typically 10pf, at zero volts, and decreases with increasing
detector voltage bias.
59
I v'oooo.--_ _-,--_ _ _-.---_ _--,_ _ _-,_ _ _---,
0
I":
, MAXIMUM
RMS
VOLTlWiE ~I--
"
,,'
""-, ~
/"
."-...
0.,.-
/ "'" ~
6 MAj(I~UM" f' ....
RMS
4 CURRENT r- ~;.~
.,~
r4~';, .....
2
iiO 1000 10K IOOK IOL----L.O•.---~O·.--~,07.--~~--~

, ' ••IRESISTANCE-n THEVINEN SOURCE IMPEOEfIICE
FIGURE 2.38: H11 F BIAS LIMITS FOR LINEAR CONDUCTION
TlJ.e switching speed of the device.is detennined by detector junction capacitance, the availability
of photon generated charges, and the time constant of the output impedance with its shunt capacitance
and the equivalent Miller effect gain. Non-saturated switching times plot exponential waveforms that
are better described by time constants, and in saturated switching the tum-on exponential is truncated by
saturation. In most circuits, these effects combine to make tum-on appear faster than tum-off. The
corresponding equations for nonsaturating switching show the ratio of voltage across the device during
switching to its final value to be:
for tum-on V.,IV 00 = 1 _ e - [T x 109/(5 RL : 1500)]
for tum-off V .,IV 00 = 1 - e - [T x 109/(6 RL + 15(0)]
for load resistor values over 10KO. Both rise time and fall time approach 3ILsec with lower values of load
resistors. The rise time waveform is truncated when the device current becomes circuit limited, while
the tum-off waveform is relatively unaffected by saturation. Delay time at tum-on is governed by the
IRED, varying from 1 to 10ILsec as IRED current is reduced from SOmA to 2mA.
Offset voltage ofthe HIIF (Le., the detector voltage at zero detector current) is small, but may
have an effect in some circuits. Typically, it is less than O.SmV at all bias levels. The magnitude is
affected by both IRED bias current and temperature, and is greatest at very low IRED currents. The
magnitude of offset voltage of the H 11 F is comparable to that of most operational amplifiers it will be
used with, so it can be ignored in many circuits.
60
g. Triac Driver Optoisolators The recognitiop. that a large portion of the optoisolator
applications functionally allow digital logic circuits to control ac line operated equipment led to the
design of new detector device family. These detectors were not designed to act as ac load current
switches, but to be pilot devices for triggering power triacs. These devices make possible significant
reductions in components and circuit size when compared to circuits using phototransistor or photoSCR
optoisolators.
Triac driver detector design combines high voltage signal transistor processing techniques with
nonisolated, small scale I.C. circuits, providing a relatively low cost detector pellet, with bilateral
symmetrical V-I characteristics. This is accomplished with a combination of lateral pnp-vertical npn
transistor structures and diffused base bypass resistors. The npn and pnp transistors are connected to
form two antiparallel pnpn's on a silicon pellet. The npn structure is designed to be photosensitive.
Planar passivation on the pellet surface is necessary in this type of design, which places an effective
upper limit on breakdown voltage capability. The device structures are constrained such that slow
turn-off and low dV tdt capability are inherent, and they combine to severely limit commutating dVtdt
capability. Additionally, the lateral pnp structure insures a high on-state voltage drop. Due to these
characteristics, the circuit designer using a triac driver will utilize different design details, when
compared to the rugged, traditional power semiconductors, to ensure reliable, dependable operation.
The planar construction allows pellet design flexibility that has not been available in traditional
power semiconductors. Most impressive is the ability to form a gate resistor that can change value as a
function of the device's voltage .. This can be designed to improve static dV t dt capability, to increase
light sensitivity, or to approximate the zero voltage switching function, again providing the opportunity
for circuit simplification and the possibility of cost reduction. The cutaway construction drawing of
Figure 2.39 illustrates the simple construction. Note the n-type silicon substrate on these devices is
connected to a package terminal. With ac bias on the detector, the substrate will be biased one diode
drop below the most positive terminal. In ac applications. any connection to this terminal can cause
circuit malfunction or device damage.
PLANAR, pnp
PASSIVATED
TOP SURFACE
CODE
Un SILICON
tit!$] p SILICON
~CONTACT
~METAL
_ CONNECTION
CONSTRUCTION
CUTAWAY VIEW
npn AND pnp

PHOTODIODE
ELECTRICAL
SCHEMATIC
FIGURE 2.39: SIMPLE TRIAC DRIVER CONCEPT
61
The application of the. triac driver provides simple, flexible ac power control. The device
characteristics demand some design effort to· compensate for certain characteristics and to assure
dependable, reliable, circuit operation. In general, more protection is required as peak power, line
voltage and frequency increase. The triac drivers muSt be protected against voltage breakover. Planar
devices are more susceptible to breakover damage than other power devices, and power line transient
voltages commonly exceed 1000V.
False firing (detector tum-on witl\out IRED tum-on) due to dV/dt can be prevented by using a
snubber network. A proper snubber will eliminate false firing due to dV Idt associated with power line
. switch on, inductive loads, and high frequency "hash" on the line. The dV/dt withstand capability of
the triac driver decreases rapidly with increased detector voltage and temperature. The.dV Idt capability
is appreciably lower than that of typical power triacs and will usually require use of more snubber
capacitance than the power triac needs. In some cases, a two-stage RC filter is required to eliminate
dVIdt problems, and can often be implemented by using the power triac snubber as the first stage.
Breakover damage is easily prevented with a GE-MOV®II Varistor. Surge current protection js
recommended for loads which can provide over 2A peak current, since this current can flow through the
triac driver while the power triac is turning on. This protection is provided by use of a series resistor.
These protection techniques are illustrated in Figure 2.40.
INCREASED RELIABILITY
..
~~-cr
J---~
~~-~
J--~
SURGE CURRENT SURGE CURRENT AND SURGE CURRtNT, elv/Clt AND
PROTECTION ONLY elv/elt PROTECTION TRANSIENT VOLTAGE PROTECTION
FIGURE 2,40: ELiMINA nON OF TRIAC DRIVER MALFUNCTION AND FAILURE
For some low voltage, low current applications, the triac driver can be used as a power switch, i.e.,
without a power triac. The major factor governing these applications is the commutating dVIdt.
capability ofthe triac driver. This represents the susceptibility ofthe triac driver to dV/dt triggering iil
one polarity immediately after conduction in the opposite polarity. Self-heating due to power
dissipation, the negative temperature and voltage coefficients of dV/dt(c) and the wiring and source
inductance of the circuit limit the range of application. Prudent circuit design dictates 60Hz,
noninductive loads, be limited to under 0.5W.
62
h. Schmitt Trigger Output Optoisolator The HllL, optically isolated Schmitt trigger, has a
medium speed, digital output integrated circuit detector. This unique detector provides the Schmitt
trigger with functions of gain, fast switching and accurate threshold and hysteresis operating from an
integral photo diode. As an optoisolator, it performs as a nearly ideal current input Schmitt trigger,
furnishing electrical isolation between input and output to prevent undesired feedback. The circuit
design provides almost foolproof operation, free from latch-up, oscillation, and providing relatively
stable tum-on and tum-off threshold currents over a wide range of operating temperatures and voltages.
The open collector output transistor on the detector chip is specified to sink over 16mA at O.4V
from an input current threshold of 1.6mA. All static parameters are specified over a 0 to 70°C.
temperature range.
The equivalent circuit·ofthe HIlL illustrates the design features. The photo diode dominates the
chip topography and provides efficient light collection. The preamplifier has a low input impedance to
preserve speed: and features a clamp to prevent IRED overdrive of the photodiode from increasing
switching times or causing other undesirable effects. The amplifier output current is added to a
reference current and both produce (across a resistor) the Schmitt trigger input signal. This method of
reference allows compensation for voltage and temperature coefficients throughout the operating range.
v cc
----r--""'-"":
OUTPUT
SYMBOL
FIGURE 2.41: H 11 L EQUIVALENT CIRCUIT DIAGRAM
63
The open collector output stage can sink up to 50mA, although saturation resistance and gain factors
combine, such that up to 1.5V drop has been observed at 5V supply voltage. The base of the output
transistor is driven resistively from an unregulated supply voltage, causing the saturation voltage to
decrease a~ higher supply voltages. Saturation resistance of the output transistor is typically between 8
and 16 Ohms. The internal voltage regulator assures power supply rejection in the amplifier section and
threshold stability in the Schmitt trigger portion.
11Hz
/ ~ r-....
/ '\ L
~ , / +5V
O. ~oo ( -;;-71-~:
/
~
- ~
......
, )-/:--4--0
;:) /
Go ---- --'
~
;:)
o INPUT
HIILI .----0
o
BIAS CIRCUIT
V=2V/DIV H=20m./DIV
55Hz 55KHz
I 1\ /:).. (\ /\ h / 1\
I I
\ J \ I \ \ ~ / \
I \ III \ \ / \
,-
1\
.\ 1. ~ \ 1/
.\ .I Il
~
;:)
Go
- .", ~
- .~
;:)
A.
- ""' .~
~ ~
;:) ;:)
o o
o o
V=2V/DIV H= 5m./DIV V= 2V/DIV H = 5ps/DIV
FIGURE 2.42: SCHMITT TRIGGER OPTOISOLATOR OPERATION ILLUSTRATED AT VARIOUS FREQUENCIES
Application of this opto isolator is straightforward in most applications. The function is simple,
and the specification provides detailed data for worst case design. Switching characteristics are the only
parameters complex enough to require further explanation. The switching times of the HIlL are
governed by the IRED switching speed, the photodiode response times, R-C time constants through the
amplifier circuit and the switching time of the Schmitt trigger stage. The Schmitt trigger switching time,
which translates to output rise and fall time, is usually under lOOns. This is approximately 10% ofthe
64
total switching time. The limiting factor in a simple circuit (i.e., resistive IRED bias) is IRED tum-off
and tum-on time, whiCh can be shortened by injecting charge into the IRED at tum-on and removing the
charge at tum-off. Normally accomplished with a speed-up capacitor shunting the IRED current
liIniting resistor, this will reduce propagation delay times by one-third. Although further reductions in
tum-on or tum-off delay can be obtained by IRED bias, maximum toggle frequency will decrease.
Investigation shows tum-on times decreasing with higher IRED drive, while tum-off times increase.
At low repetition rates, fastest times will be obtained with resistive limiting of IRED current to
slightly over tum-on threshold and capacitive charge injection-removal of about O.8nC per rnA IRED
current. At high repetition rates or for short pulses, the overdrive supplied at tum-on fills both emitter
and detector with charge which must be removed at turn-off, since the pulse time is too short for it to
dissipate. Because of this, fastest square wave and short pulse response is obtained with resistive
limiting of IRED current to about twiCe turn-on threshold and capacitive charge injection-removal of
about O.4nC per mAo This approximates specification sheet test conditions, where most HllLl devices
will operate at 500kHz (Le., a lMHz NRZ data rate).
Due to the higher threshold current and wider range of threshold currents found in the H 11 L2,
compared to the HllLl, its maximum frequency capability, in a worst case bias circuit design, will be
less. Switching time is also a funciton of detector supply voltage. Although turn-on time increases
slightly with decreased supply voltage, turn-off time decreases more. Therefore, highest frequency
operation will be obtained at a 3V supply voltage, ~sing an HllLl with speed-up capacitor.
TEST CIRCUIT 1000~--~m-----~----~r-----~-----.-----'
HIILI SWITCHING
LOW FREQUENCY EFFECT
UI OF SPEEDUP CAPACITOR
C
C NORMALIZED TO:
II::
R:I.2K
R / ~ c=o
I o
u tp =5j.1sec
,...
I
i£ f : 100KHz
z
~500~----4-~~-+----~~----+-----~----~
3
~
15
I-
U
~ j4- tp f
5V n n
.J L-...J L HIGH FREQ.
c
u
V 0
IN ~ /4 5psec
5V r-1
o .J L.J
r LOW FREQ • 0.2 0.4
..j I+- 5p,eo.
1000.------ooor------........------.------.., 1000.------..,.---..---..-------.------,
HIILI SWITCHING,
LOW FREQ. EFF. OF
SPEEDUP CAP.
UI NORMALIZED TO:
C
R: 1.2K
~ i-------f0i<07Y-- HIILI SWITCHING, HIGH
CoO
~ FREQUENCY EFFECT OF
tp: 5psec
SPEEDUP CAPACITOR
8 NORMALIZED TO: f : lOOK Hz
i£
z R =1.2K
;;; 500t--+-+-if---- CoO
:::)
-I tp: Ipsec
~ f:250KHz
II::
~
~
~
0.6 1.2 1.4 0.4 0.6 1.2

NORMALIZED TURN OFF TIME NORMALIZED TURN OFF TIME
FIGURE 2.43: H 11 L SWITCHING
65
The isolated Schmitt trigger action, with well-defined input threshold limits, provides a nearly
ideal link to input information to logic systems. It can be used to monitor ac power line voltage,
telephone lines for ring voltage andlor line current, inter-system data lines, and other currents andlor
voltages. The fast transition times and wide supply range are compatible with most Ie logic families. To
minimize design time for these circuits, a bias resistor chart is provided in Figure 2.44. The input circuit
LOGIC FAMILY Vcc R1 R2

TTL -
-74, 74H, 74S 5V 390 0
-74L, 74LS, MSI, LSI 5V 3.3K 0
HNIL 15V 1.8K 0
CMOS -
-3V Supply 3V 1.2K 0
-12V Supply 12V 5.6K 0
fZL 5V 7.SK 27 BIAS CIRCUIT
FOR TTL. HNll. CMOS.
NMOS and PMOS Biases per Manufacturer's Instructions. 12 l. NMOS AND PMOS
FIGURE 2.44: H11 L INPUT FOR LOGIC CIRCUiTS. SUGGESTED BIAS RESISTORS
is designed to provide threshold current to the IRED from the specific monitor function. Fairly accurate
( ± 20 %) current and voltage tum-on/tum-off limits can be set using the programmable current sensing
circuit previously described (page 42 or HIlL specification), an advantage when line noise is of a
significant amplitude compared to the signal level.
Logic circuit drive requirements for the HIlL are straightforward from logic circuits capable of
providing the 1.6mA or 10mA current to drive the IRED. Buffer circuits are required for lower output
current capability devices. Logic drive of IRED's and buffer circuits are illustrated later in
optoelectronics circuits.
+ 1.32
ISOLATED /'
INPUT \
.....
o--....J
_-----
HilI.
-3.2
FIGURE 2.45: H11 L INPUT FOR ECl lOGIC
66
i. Fiber Optic Systems Fiber optics systems offer the electronic system design engineer an
alternative method to transmit electrical information and sense physical events. Fiber optics offer the
advantages of a small, light weight, durable, corrosion resistant, nonconducting signal path that is
virtually unaffected by and has no effect on the electrical environment the signal passes through.
SIGNAL
]
ELECTR'CAL ~
f
+'
==>INF~~~:TIO~
ELECTR'CAL
SIGNAL
NON CONDUCTOR
SOURCE MEDIUM DETECTOR
FIGURE 2.46: TYPICAL FIBER OPTIC SYSTEM
Efficient conversion of the electronic signal into a light signal and insertion of the light signal into the
fiber are key to fiber optic system performance and to system costs. Often the advantages of EMIIRFI
immunity, shock and spark hazard eliminationn, crosstalk immunity, size and weight, and lack of
cabling route/wiring code requirements more than overcome the disadvantages.
A fiber optic system differs from the optocoupler and emitter-detector systems previously
discussed in its interface with the light transmission medium. The fiber is a low attenuation, flexible
light transmission path which is mated to the emitter and detector via connectors. The fiber can be
obtained in a variety of attenuations, forany given wavelength emitter, a variety of core diameters, and
can be compatible with different connector systems. Fiber is also available in a range of costs. The fiber
and connector determine the degree of coupling between emitter and also effectively determine cost,
distance capability, and other key system parameters.
1. Fibers Light rays are confined to the core of the optical fiber by cladding the core with a
transparent material of lower index of refraction. This defines the critical angle of reflection at the core
cladding interface, thereby confining rays at angles less than this to the core of the fiber. A step index
fiber has an abrupt change in index of refraction at the core chldding interface. Large diameter step index
fibers have relatively large critical angles, many ray paths, and are called multimode fibers. In a graded
index fiber, the index of refraction changes gradually from a high value to the lower value of the
cladding as position varies radially from the center.
67
, '
This providestwo effects: the rays gradually bend back towards the center ,instead of reflecting at
the iIiterface, and, the rays travel faster the farther they are from the center. This keeps rays, regardless
of angle (within the criticali:mgle), traveling along the, axis ofthe fiber at roughly the same velocity .
This velocity matching property in a tnultimode fiber gives graded index fibers generally higher
bandwidth-distance characteristics; Thehighest bandwidth-distance fibers are constructed to operate
like microwave waveguides and have very small radius core and step index cladding. These have small
critical angles and confine light to one type of path, a monomode propagation. The small core size
makes it difficult to launch light into the fiber, to splice the fiber, and makes a fragile fiber requiring
cabling with buffers and strength Illembers. For moderate bandwidth applications, step index fiber is
normally best due to its reasonable cost attenuation trade-off andJarge core diameter.
STEPPED INDEX REFRACTIVE MODE DELAYS

STEPPED INDEX ONLY ONE MODE
MULTIMODEdj)FIB~R
;bt-- ~
INDEX PROFILES DIFFER GREATLY
MONOMODE FIBER PROPAGATES
5-~-f) '~
.i __
100-600 ;, ,
II- m . ~
1-- ~f."; :~ J:,"':;,~?I )hM}
GRADED INDEX MODE DELAYS

MULTI MODE FIBER PRACTICAL L Y
IDENTICAL
50-~01Jl)
m
r-
II-
n REFRACTIVE
INDEX
OPTICAL FIBER TYPES
AXIAL AND RADIAL STRUCTURAL MEMBERS
STRESS RELIEF TUBE
CORE
l1
PROTECTIVE JACKET
FIBER
STRENGTH MEMBERS
JACKETED
I'
+--
ANTI ABRASION WEATHER PROO'F COVERING
FULLY PROTECTED ~
TYPICAL OPTICAL FIBER CABLE
FIGURE 2.47: OPTICAL FIBER CONSTRUCTION
68
The fiber should provide the largest light power (irradiance) to the detector consistent with other
system constraints. This will provide the largest detector signal, minimize requirements for
amplification and maximize signal-to-noise ratio. Detector irradiance will depend chiefly on the power
launched into the fiber and the attenuation of the light due to fiber characteristics and distance, as well as
detector-to-fibercoupling. In moderate cost systems, the power launched into a fiber core is primarily a
function of the diameter ofthe fiber core. Most moderately priced sources are of comparable size to a
large fiber and cannot be located extremely close to the fiber core, so most of the source emission does
not enter the core.
This effect can be illustrated using a typical TO-46 packaged LPE IRED emitter. The emitter is
physically quite far from the fiber core, and poorly optically coupled. Over 70% of the total power
emitted by the chip exits the sides of the chip and is reflected toward the fiber. Most rays miss the fiber
core; the few that enter are not all within the critical angle of the fiber core, causing further losses. As the
fiber core gets smaller, the number of rays striking it will decrease in rough proportion to the core area.
The effect of critical angle reflection is described by the fiber's numerical aperature (N . A.), which is the
sine of the angle between the core's axis and the ray that enters the fiber to reflect at the core cladding's
critical angle. Both core diameter and N .A. affect the coupling to the emitter-although core diameter is
normally more effective due to typical emitter dimensions.
A wide variety of fibers exist, with little standardization, in three basic material types: plastic
clad-:plastic core fiber (plastic fiber); plastic clad-glass (silica) core fiber (PCS fiber); glass clad-glass
core fiber (glass fiber). Fiber attenuation varies greatly within core material types. Usually plastic fibers
are highest attenuation, ranging from 0.3 to 3 db per meter at the lowest attenuation wavelengths, and
much higher at absorption peaks. Silica core fibers can range from as low as 0.001 to 1 db per meter at
lowest absorption wavelengths. Generally, each fiber family has a different wavelength of minimum
attenuation and different attenuation at each specific wavelength. These effects and the variation in
measurement and presentation techniques used by different fiber manufacturers cause straightforward
integration of the spectral output of a light source with the fiber attenuation to provide a first
approximation of attenuation for that particular source fiber combination. Actual data on the
combination, preferably from several lengths of fibers from several manufacturing lots, provides the
best design data. Data gathered on a particular fiber usually show high attenuation for very short fiber
lengths. This is due to power transmitted by the transparent cladding ofthe fiber. For most fibers, the
cladding power is significant and has a high attenuation with distance. For most fiber and emitter
combinations, the power out of the fiber will fit an equation of the form:
Power Out = Core Power (lO-AX) + Cladding Power (lO-BX)
where A is the normal fiber core attenuation, B is the cladding attenuation, and X is the fiber length. This
provides a simple, convenient approximation to quantify a complex group of transmission properties.
69
POLYOPTIC (0.05-1.0)
10
.j ~
CROFON~040
..LJ ..lo..~ $ ESKA(SH)(O.25-t.0)
-'-
-
-' I I ,
.,.
" I~
-- -'- ./ I I
" V
~A I I
" - --
.,.
/\
I/\,,/ / - L 1 .
"-
PIR 140 (0.4)
"""-
~ J \ 1V ~ GAUTE 1000 (1.0)
®
""-
a::
w
....
w
- /
:iE
....
.&J
~
~
~ ~ PFX-S-120(0:2)
z
0 ~
ei::> 101
,
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.... ......... J
~ ~ J
a:: ~ ®
w
IX! SIECOR 155 (0.2)
fl...
ii: ~
~
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~
'"
f" QSF A (0.2-1.0)
162
..............
"--.;::
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®
CORGUIDE FWF(O.05)
~
- I ~
" ~CORGUIDE®SDF(0.1)
FIBER TYPE
-3 (DIAMETER INMM)
10 600
700 800 900 1000
WAVELENGTH IN n m
FIGURE 2.48: ATTENUATION PROf>ERTIES OF A VARIETY OF OPTICAL FIBERS
This equation can be solved from measurements on four lengths of fiber with a given type emitter. Each
particular emitter pellet and package requires this data, as it will have a unique spacial distribution of
output power, as well as the spectral output distribution characteristic of the pellet.
This discussion of optical fibers has so far dealt with single fibers. In some applications,
performance and/or cost benefits may be gained by utilizing a fiber bundle, a group of single fibers in a
single jacket. Bundles may be treated like single fibers when certain factors are considered. A bundle is
more flexible than a single fiber of equal active area, and under repetitive flexing will continue to
operate even if a few strands break. Cladding and packing take a larger proportion of a bundle's area, so
the active core area of a bundle is much less than that of a single fiber of identical diameter. A bundle
may be harder to terminate with a connector than a single fiber, as each individual strand has a finite
probability of inserting improperly into the connector. It will usually be more difficult to polish the
fibers of the bundle, and it may cause higher power insertion loss due to poor finish. It should be I10ted
that fiber end finish is critical in obtaining consistent low atteI1uation light coupling into and out of any
fiber optic system. Poor fiber end polish has been observed to cause up to 10 db (..;- 10) signal loss
per end.
70
2. Connectors A wide variety of fiber optic connectors exist, since there is virtually no
standardization within the connector industry. To provide a low loss fiber.,.to-fiber splice, a connector
must position the two optically polished fiber ends very close together in axial concentric alignment. If
the fiber ends touch, abrasion may spoil the end finish, causing power loss (some plastic fiber
connectors use pressure to maintain fiber end contact, on the theory that the end surfaces deform to fit,
and thereby mate better), while power coupling falls rapidly with increasing distance between the fiber
ends, increasing angle between fiber axes and with misalignment of the fibers concentrically. The
tolerances on the fiber core, cladding, and concentricity will affect different connector designs to
varying degrees. While the fiber connector must ensure this precision, it should also be low cost and be
quickly applied to the fiber with minimal skill and tooling-even in the field. This presents a challenge
to the connector manufacturer, not only because of the wide variety of fibers, but also because of the
increasing tolerance problems as fiber core diameter decreases. In general, connectors for fibers of
200JLm core diameter and over are less expensive and provide better consistency than those for smaller
core diameters.
T046 ADAPTOR HOUSING
GLASS
FSEI PACKAGE in FIBER IN CONNECTOR

TO 46 CONNECTOR ADAPTOR
a: CUTAWAY VIEW
b: MATING OF F5E1 AND AMP INC. CONNECTOR
FIGURE 2.49: TYPICAL ACTIVE DEVICE CONNECTION TO FIBER OPTIC
Most active devices, i.e., emitters and detectors, are applied to fibers via fiber connectors and an
adapter or a smallienght of fiber (pigtail), built into the active device, terminated with a connector.
Efficient coupling of power from the emitter to the fiber core depends on the connector system and its
match with the emitter design. The GFOD/E series fiber optic active components were designed to mate
to the AMP Optimate @ ferrule connector system. This combination provides an excellent combination
of cost, performance, and flexibility. Since the AMP system has a variety of standard active device
connectors, it is .also possible to mix in other active devices, for example the F5E 880nm emitter, which
can sometimes provide system advantages, such as longer range transmission.
71
3. Emitters The emitter transforms an electrical signal to the light signal which will be coupled
into the fiber and transmitted. A wide choice of emitters confronts the designer ofa fiber optic system.
"Fiber optic compatible packages" range from standard TO-46 or TP/4 devices to be placed in an
adapter, through units with a pigtail of fiber exiting the package (requiring a splice to the transmission
fiber) to components which a terminated fiber screws into. The package determines the efficiency of
power coupling and the ease (cost) of coupling the fiber to the electronics. It may also limit the choice of
fibers and connectors. Most packages are printed circuit board compatible. The wavelength, speed, and
power output of emitters varies with the material and process used in contruction.
A major subdivision exists between LED/IRED (light/infrared emitting diodes) and diode lasers.
These lasers provide a small area, powerful source of very high speed capability. They can insert large
amounts of power into a fiber and are usually chosen at wavelengths from about 800nm to 900nm and
1100 to 1400nm. As laser action starts above a bias current threshold, the power output follows a
non-linear relationship with respect to the bias, causing elecro-optical feedback networks to be popular
in laser modulation circuitry. Currently, laser diodes have some practical disadvantages. The reliability
.of diode lasers is compromised by· several factors, among which ohmic contact and light output
degradation appear most prevalent. They are difficult to manufacture, package, andJestfor fiber optics
use and are therefore expensive compared to LED and IRED sources. The LED/IRED technology
covers. a wide range of products of low to moderate speed and power wavelengths from 550nm to .
1300nm. Low cost and excellent reliability can be obtained with these units but is not assured without
the user qualifying sources for these qualities. Most devices used for cost sensitive systems are between
640nm and 940nm to combine efficient light production with efficient detection by a silicon detector.
Choice of the emitter is dependent on the fibers which are viable for system requirements, the effort
required to predictably couple the fiber to the emitter, and the cost/performance trade-off items
previously mentioned.
The GFOEIA series of emitters contains a highly efficient, long life, silicon doped liquid phase
epitaxial gallium arsenide pellet producing 940nm infrared radiation. Light conversion efficiency of the
pellet is approximately 4% at 30-50mA d.c. drive levels and 25°C, and peaks to 5-6% at about 200mA
pulse drive. Due to the negative temperature coefficient of efficiency, pulse operation is required to
produce high output powers at high currents. The package is designed to directly accept any fiber
terminated in an AMP OPTIMATE™ ferrule connector teminal. The GFOEIA series emitter utilizes a .
unique reflector and lens combination inte~glly to give a large, 1.2mm dia., almost constant intensity
irradiance pattern at the fiber end plane. This assures good power coupling to the more than 30 fibers the
AMP OPTIMA TETM ferrule connector has specified, as well as additional fibers not applicable to
splicing in the AMP system due to concentricity. Power launched into the fiber core with the GFOEIA
serie~ is primarily a function of core diameter due to this large spot of focused power. Over the range of
100p,m to Imm core diameter, the power launched is proportional to d2.5 , where d is the core diameter.
72
TABLE 2.5: GFOE1A1 FIBER PERFORMANCE
TYPICAL GFOE1A1 PERFORMANCE

FIBER NAME TYPE DIAM.IN mm LAUNCHED POWER* ATTENUATION db/m
POLYOPTIC PF 1.0 18Ol'W 12(C)
CROFON®1040 PF 1.0 200I'W 5.8(M)
ESKA SH 4001 PF 1.0 200l'W 5.8(M)
GALITE 1000® GB 1.4 15Ol'W 0.6(M)
ESKA SH3001 PF 0.75 IOOI'W 5.8(M)
ESKA SH2001 PF 0.5 451'W 5.8(M)
PIR140 PF 0.4 281'W 1.6(M)
QSF400B GF 0.4 311'W 0.03(M)
QSF300B GF 0.3 171'W 0.03(M)
QSF200B GF 0.2 71'W 0.03(M)
PFX-S-120 OFJ 0.2 71'W 0.13(C)
SIECOR®155 OFJ 0.2 61'W 0.02(C)
CORGUIDE®SDF GF 0.1 0.81'W 0.02(M)
CORGUIDE®FWF GF 0.05 O.II'W O.04(M)
CODES: *At IF = SOmA

P-Plastic F-Fiber
G-Glass B-Bundle
]-Fully protected M-Measured
C-Calculated
NOTE: Calculated and measured values may vary considerably. Errors can be due to curve smoothing, measurement technique or tolerance.
These data represent curve fitting with a minimum of3 different lengths of the fiber. Where a fiber is available in several diameters
attenuation may be measured on only one size.
Ultimate system length will be determined by fiber attenuation at the emitter's wave length.
Considerable difference can be noted between attenuation factors determined from specification sheet
data and that observed in practice. This is illustrated by comparing the chart to the fiber attenuation
curves shown earlier. Longest ranges can be obtained with the 880nm F5E and polymer clad silica fiber.
The F5E is packaged in a TO-46 and requires the AMP, Inc. bushing (530563-1) to couple with the
fib.er. Coupling loss is about 6db more than the OFOEIA series. Despite these factors, the combination
has advantages. The F5El produces about 3db more radiation than the OFOEIA.
The OFOEIA emitter is also capable of being used as a sensor ofthe 940nm radiation it produces.
Photoresponse is typically 0.03 Amperes per Watt (A/W), while leakage currents are typically InA at
25°C. This indicates a half duplex link can be constructed on a single fiber with a single diode on each
end of the fiber, providing both emitter and detector functions. Such a link is illustrated in section 6.3.1
of this manual.
73
4. Detectors The detector choice for afiber optic system is constrained by almost the same variety
of packages as emitters, by material and process effects on speed and wavelength, and by the
availability of amplifiers built on the detector pellet through integrated circuit techniques. Almost all-
detectors are based on semiconductor diode charge-carner-generation. caused by photons liberating
carrier pairs near the junction of the diode. Although 111-V compound semiconductor detectors are used
beyond lOOOnm wavelength, most fiber optic systems use silicon detectors operating between 500 and
lOOOnm. This is due to the cost, availability, and predictability of silicon semiconductor material. Most
current solid state electronics is based on silicon, and its light-detection properties are very compatible
with common emitters and fibers.
Basic diode detectors may be designed with avalanche multiplication amplification or without.
Avalanche photodiodes (APD) are very fast, have good sensitivity, and are difficult to manufacture and
electrically bias. They are mostly confined to applications requiring very high-speed operation. Other
diode detectors differ mainly in the techniques used to minimize capacitance (for speed) and noise
without sacrificing sensitivity. The PIN diode is a common type, which physically places a wide
intrinsic region between the nand p-type silicon forming the junction. This effectively produces a wide
junction, which lowers capacitance per unit area and lowers bulk leakage currents which contribute to
noise. Amplifiers are also commonly made on the same pellet as the photodiode, using the same
techniques as previously discussed.
The GPOD lA is a single phototransistor detector in the fiber optic compatible package, while the
GPODIB is photodarlington detector. Both devices use pellets similar to those previously described.
Purther additions to the fiber optic product line would be' expected to follow the same trends as the
optoisolator line. It should be noted that-all the side looking plastic devices (Le. PSG, L14U etc.)
are mechanically and optically compatible with these housings. Such combinations are available for
.large volume applications.
74
•
QUALITY AND RELIABILITY OF
OPTOELECTRONIC COMPONENTS
3.1 QUALITY AND RELIABILITY COSTS
The circuit designer must be aware of the expected reliabilty of the many different components
used. This allows control of life cycle costs, such as, warranty costs, repair costs and downtime costs,
through proper application of these components. Also, component quality can significantly affect a
project's economic viability. Quality costs are those associated with the percentage of components
.received that fail to meet some portion of their specified performance levels. Reliability costs are those
associated with the percentage of components that change so that a circuit malfunction occurs.
Some reliability failures can result from inadequate circuit design allowances for parameter
changes with temperature, bias, etc. In this discussion, these failures are considered unreliable design
malfunctions and will not impact the component reliability considered here.
The costs associated with mediocre quality and/or reliability may prove very significant. A
convenient method of visualizing these costs is to calculate the added cost-above purchase price - that
is required to have a working component in the field. Cost impact comes from the combination of repair
20,r------~--___,r------,----__,
I-
i;i10.oof----+---t----+-r---+----I
~
8 $10.00 REPAIR COST
~
~
<)£---,4-$2.50 FAILURE
I ~
OJ
Ii
~ 1.00 ELIMINATION ~10i------+-,L-~~-~----------~
COST I
..J
<C
z
$1.00 FAILURE ~
OJ
o ELIMINATION II:
j:: COST
g 0.1i-----t
<C
COIo1PONENT AVERAGE DEFECTS' 0.01"1. (100 PPMl

0.Q1 L - L - _ - ' < - _ - - - ' ' - - L -_ _-:':--::-===-_ _--'
0.Q1 10 % REJECTS 50 100
100 100K PPM COMPONENTS PER SUBSYSTEM
FIGURE 3.1 a: ADDITIONAL COSTS DUE TO QUALITYI FIGURE 3.1b: SUBSYSTEM COMPLEXITY AND REWORK RATE
RELIABILITY FAILURES AND WHERE FAILURE FOUND
cost, downtime cost, and failure rate and will rise to a major factor if any are high.
Considerable emphasis is placed on the quality and reliability of General Electric optoelectronic
devices, from design, manufacturing, specification, testing, and the support literature provided to
users. Both outgoing quality level (the AQL or LTPD shipped to) and, more importantly, process defect
average are closely monitored, recorded, and used as tools to improve future performance. As an
example of the effectiveness of this procedure, in 1981 General Electric phototransistor Qpto isolators
were normally shipped to a 0.4 % AQL. During that year, the observed electrical parameter defect level
was approximately 0.1 percent, 4 times better than required to consistently pass.
75
A more appropriate indicator of quality is reflected in the 1983 quarterly reliabil.ity summaries. These
reports summarize, by product line, each month's outgoing process average - the estimated average
defect level inthe outgoing product based on the appropriate MIL-STD quality control sample plan data
generated in normal quality control monitoring of outgoing product. For the year of 1983 the monthly
OPA for optoelectronic product electrical parameters ranged from a low of 1.7 parts per million (in
March) to. a high of 49 parts per million (in December). This impressive record includes all
manufacturing sites and all optoelectronic devices, although it is dominated by optoisolators in sheer
numbers. This record is the result of a recognition that quality and reliability are prime considerations in
the selection of optoelectronics devices, due to the criticalfunctions of sensing and isolation performed
by them, and a commitment by all at General Electric involved in optoelectronics to provide the best
devices possible - without sacrificing competitive prices.
To meet the goals of higher quality, higher reliability in a competitive market requires an
aggressive product improvement program. The most noticeable result of this program recently has been
the introduction of the reflector construction technique in optoisolators. This construction technique
provides higher performance, in coupling efficiency and isolation, follows more reliable design criteria
(25 % fewer wire bonds, lower IRED thermal resistance for cooler operation, longer internal creep path
for isolation) and is more consistent, due to the unique mechanical design and the high degree of
automation this design allows, providing the basis for even higher quality. Although this world leadi.ng
design has not yet built up the historical data base associated with the present champion, the sandwich
construction present, testing to date indicates equivalence today, with the promise that the knowledge
and data gained will assure new records in the future. Figure 3.2 illustrates the assembly process flow of
the reflector design DIP coupler. Note the eutectic die bonds on both die, the flexible IRED
antireflection coating, the glass dielectric, the 100% temperature cycle often cycles, and that the testing·
includes high temperature wire bond continuity on all devices in addition to parametric tests.
MOLDING EMITTER CLEAR

COMPOUND PELLET COATING
PREFORM
PREPARATION
MOLD I - - - - -...----~.. MECHANICAL " _ _"_--I~

DEFLASH
VAPOR
DEGREASE &
CHEM. DEFLASH
PRODUCT
FINAL SHEAR FINISHING WAREHOUSE
LEAD FORM TESTING. &
& TUBE LOAD MARKING SHIPPING
PACKING. ETC.
OC & RELIABILITY
BY DETECTOR
• IN PROCESS AUDITS TYPE INSTRUCT.
[!] OC INSPECTION GATE
TABLE 3.1 DIP OPTOISOLATOR FLOW DIAGRAM-REFLECTOR CONSTRUCTION
76
Optoelectronic components reliability is also monitored. A manufacturer assesses the
performance of his components by performing accelerated test sequences on periodic samples of the
manufacturing line output: Most of these tests are run at, or beyond, maximum ratings to allow an
accelerated reliability assessment of the product. These tests can provide the information required by
the circuit designer, but the severity of the test conditions compared to use conditions must be
considered. The extrapolated results of these severe tests to normal use levels is still a challenge for the
circuit designer, but the challenge is lessened by the availibility of information that provides estimates
of acceleration factors, i.e., the increase in rate-of-failure, caused by increasing stress levels, such as
voltage, current and temperature. Application of these acceleration factors to the data can allow worse
case circuit design techniques to be applied over the design life of electronic equipment. Several sources
document estimates of these acceleration factors. One of the most widely used is MIL-HDBK-217 D
although recent bibliographies and surveys indicate a vast quantity of relevant data on plastic
encapsulated semiconductor devices exists. Such information sources should be consulted when
estimates of equipment reliability are attempted from these, or any other, summaries of reliability test
data.
3.2 SUMMARY OF TEST RESULTS

Tables 3.1 through 3.4 summarize the periodic reports issued by GE - SPD Quality Control on the
optoelectronic products. As new products, processes and test procedures evolve, the application of past
data to reliability prediction changes. Thus, data presented here represents a "snapshot in time" of data
believed applicable to the product made now and in the immediately anticipated future. A separate
section will cover the decrease in light output of the IRED with time of operation, a phenomenon noted
in all light emitting diodes, both from the viewpoint of summarizing the observed data and of predicting
the response of the majority of devices to expected stress.
Each stress condition monitors a different capability of the component. For the emitters and
, detectors, the operating life test stresses current, voltage and power activated mechanisms. The only
tests which have been found to activate the output decrease ofthe IRED are tests in which current flows
through the IRED. Storage life at elevated temperature tests stability and resistance to thermally
activated mechanisms, such as corrosion caused by contamination. Humidity life tests the capability of
the package to keep contaminants out, as well as the ability of the package to resist moisture acitvated
corrosion, deterioration and surface leakage problems. Temperature cycle causes mechanical stress on
components made of materials with different coefficients of expansion, and can break or thermally .
fatigue parts which are thermally mismatched. This is presently a problem with optoelectronic
components packaged in clear epoxies when subjected to wide, repeated temperature changes, due to
the large coefficient of expansion of the clear, unfilled epoxy. Since the object of the test program is to
gain the most information in the shortest time, and since thermal fatigue has a very strong temperature
acceleration, these tests are run to the limits defined by activation of non-valid failure mechanisms or
beyond common test equipment capability, without regard for maximum ratings. All high efficiency
IRED's have an anti-reflective coating that, unless carefully selected and controlled, can have a
detrimental effect on extended temperature cycle performance. Illustrated here are temperature cycle
results of the standard 100 cycle test and extended stress results to 200 and 500 cycles, without evidence
of thermal fatigue. This is a tribute to the mechanical design of the GE hermetic IRED. Mechanical
sequence stress was not performed on the hemetic IRED, since it contains only two, redundant
lead bonds and should exhibit one quarter the failure rate of transistors requiring two independent
lead bonds.
77
TABLE 3.2: RELIABILITY TEST SUMMARY - EMITTERS AND DETECTORS
QUANTITY TOTAL BEST ESTIMATE

DEVICE TYPE STRESS CONDITION
TESTED DEVICE HOURS FAILURE RATE*
Hermetic IRED Operating Life 0.26%/ I 0 3 hrs.

267 267,000
• LED55 Series IF = 100mA @ 25°C 0.26%/10 3 hrs.+
• LED56 Series
Pulsed Life @ 38°C
• 1N6264 • 1N6266' 0.12 %/103 hrs.
IF = lA for 200 600,000
0.12 %/10 3 hrs. +
80lA-sec @ 60Hz
Storage Life*
80 80,000 2.2%/10 3 hrs.
T = 200°C
Temperature Cycle*
414 86,100"- 0.42%/100"-
·65°C to +200°C
Hermetic Detectors Operating Life
75 75,000 0.95%/10 3 hrs.
• L14 F Series Pd = 300mW
• L14G Series
Storage Life
75 75,000 0.95%/10 3 hrs.
T = 200°C
Temperature Cycle
-65°C to +200°C 75 7,500"- 0.95%/100"-
Mechanical Sequence
1.5 KG Drop Shock
75 N.A. No Failures
20 KG Centrifuge
20 G Vibration
*Catastrophic failure rate to best estimate 50% upper confidence level.
. + Combined catastrophic and degradation, to {::, POUT~ 50%, est. failure rate to 50% UCL.
*Stress conditions exceed device specified maxi~um ratings.
TABLE 3.3: RELIABILITY TEST SUMMARY - H23 PAIR FAMILY
(ALL HOUSINGS COMBINED - ALL DETECTORS CqMBINEDI .
PAIRS TOTAL PAIR BEST ESTIMATE

STRESS CONDITION TESTED DEVICE HOURS FAILURE RATEt
Operating Life @ 25°C
625 496,000 0.14%/103 hrs.
IF = 60mA, Ie = 20mA*
100°C Storage 450 329,300 0.51 %/103 hrs.
-
Humidity Stress @ 85°C, 85% R.H.* 450 329,300 0.51 %/103 hrs.
Temperature Cycle
831 223,100- 0.021 %/10-
- 65°C to + 100°C
tCatastrophic failure rate to best estimate 50% upper confidence limit.

*Stress conditions exceed pafrs specified maximum ratings in some or all housings.
78
The basic H23 matched pairs of emitters and detectors are also used in the H21 and H22 interrupter
modules, the H24 opto isolator, the GFOD/E fiber optic active devices and as discrete devices. A
significant effort was expended in the design of these devices to ensure their reliability. The most
evident to the eye are the recessed lens, which is thereby protected from mechanical damage during
automatic handling, and the serpentine path the mountdown lead follows within the package, to provide
a moisture proof path seal in the transfer-molded epoxy. Additional features include the long-lived
GaAs IRED with its protection and contact system, the extra large diameter bond wires to withstand
extended temperature cycle and the conservative maximum ratings. Additionally, all units are
submitted to temperature cycle and high temperature continuity testing prior to electrical parameter
screening. No significant difference in reliability has been observed between the various housing
alternatives, therefore the test data on all types has been lumped together by pairs, which conserves
space and provides a larger, more statistically significant sample. The operating and humidity stresses
are beyond specified maximum ratings, and 500 temperature cycles were tested on a portion of the
samples. The observed change in IRED output with operation is the same low rate documented on all
General Electric GaAs IRED's in the next section.
The six pin DIP optoisolator differs from familiar solid state components in that it contains two
chips and a light transmission medium, providing a higher potential for failure than simpler
components. Due to these construction differences, it would be expected to have different domi-
nant failure modes than either discrete or integrated circuit semiconductors. Each output device type
also has some unique characteristics that require unique stress testing. Since the IRED is identical
in each type of coupler, most IRED evaluation work is done on the transistor coupler due to the minimal
variation of CTR with temperature and bias which provides an accurate monitor of IRED performance.
Darlington test monitoring is done at extremely low IRED currents and, therefore, shows the highest
rate of decrease when stressed at identical levels. (See next section for details.) The SCR output coupler
is subject to the possibility of inversion layer formation (channelling) as are all high blocking
voltage semiconductors. Stressing at high blocking voltage at high temperature (HTRB) will accelerate
possible inversion layer formation. Test results of all detectors are combined for high temperature
storage life, temperature cycle, humidity and salt atmosphere stress, all of which are relatively free of
effects dependent on the output device. The results of these tests illustrate the superiQrity of the G.E.
patented glass dielectric isolation, silicon doped liquid phase epitaxially grown IRED chip and total
electrical and mechanical design. This is a premium optoisolator from a reliability and a performance
standpoint. From a manufacturing standpoint, it enjoys high yields and ease of assembly, providing this
quality at competitive costs.
. In the evaluation reliability tables with the acceleration factors given in the next section, both
the IRED heating from power dissipated in the output device and the standard readout bias must be
.known. This heating can require from 5.5mW/oC for the HllA to 11.5mW/oC for the HllAV
construction. Standard CTR readout conditions for phototransistors are IF = lOrnA, and for
photodarlingtons at IF = ImA.
For convenience, the reliability test summaries are separated into operating and non-operating
stresses. All DIP package and detector types are combined in non-operating test results since no
significant difference has been observed between types. Operating tests are separated by detector type
into significant subgroups. Due to the combined effects of sample size and experience on best estimate
failure rate, it is expected that the newer detector type failure rates are not representative. These failure
rates are anticipated to decrease, as production increases, to approximate the level ofthe more mature
types. The data base on combined phototransistor and photodarlington detectors is large eiJ.ough to
allow valid failure age analysis. This analysis indicates the failure rate decreases significantly with time
on test, which signifies both long life capability and the possibility of reliability enhancement
screening. A further analysis oflumped test data by date for failure age reinforces the decreasing failure
rate and proves the consistent long-term reliability of the General Electric DIP opto isolator.
79
TABLE 3.4: RELIABILITY TEST SUMMARY-GE DIP OPTOISOLATOR
(OPERATING STRESS TESTS)
QUANTITY TOTAL BEST ESTIMATE

DETECTOR TYPE STRESS CONDITION TESTED DEVICE HOURS FAILURE RATE
Combined Phototransistor Operating Life, TA =25°C
2499 1.8xlQ6 0.64% 1H)3 hrs.
and Photodarlington IF =6OmA, IE = 20mA, V CE = 15V*
Humidity Blocking Life, T A= 85 ° C
pliototrensistor 120 6.0x 1()4 1.2%1103 hrs.
RH=85%, VcB =24V, VEB =4V, V1so =100V
DC Blocking Life,
PhotoSCR 579 3.1 x lOS 0.55 %1103 hrs.
V AK =400V,IF=0, TA=l00°C
AC Blocking Life,
Triac Driver 180 1.2x1OS 2.2 %1103 hrs.
V46=141VRMS,IF=0' TA=l00°C
DC Blocking Life,
Photo Schmitt Trigger 25 2.5 x 1()4 .2.8%/103 hrs.
V6s=V4s=20V,IF=0, TA=l00°C
* 50% u"perconfidence level best estimate failure rate.
*Accelerated test, test bias conditions in excess of device ratings.
TABLE 3.5: RELIABILITY TEST SUMMARY- GE DIP OPTOISOLATOR

(NON·OPERATING STRESS TESTS - ALL TYPES COMBINED)
QUANTITY TOTAL BEST ESTIMATE*

STRESS CONDITIONS TESTED DEVICE HOURS FAILURE RATE
150°C Storage 2956 1.5 x 106 0.37%/103 hrs:
Humidity Storage, TA = 85°C,
3283 1.6 x 106 0.29%/103 hrs.
R.H. = 85%
Temperature Cycle 5.9 x 105 _
5884 0.035%/10-
-65°C to + 150°C
Salt Atmosphere
25 600 0.13 %/hr.
MIL-5-750/1041,35°C
*50% upper confidence level best estimate failure rate.
Both storage tests showed no significant change in failure rate over the years. Temperature cycle
exhibits a significant improvement: pre-1976 - 0.15%; 1978-79 -0.04%; 1980 - 0.012% per 10
cycles. This illustrates the effectiveness of process control steps and the lO-cycle temperature cycle
followed by high temperature continuity screening of all General Electric DIP couplers done prior to
electrical parameter testing. Although the following section deals with IRED change with operation, it
should also be noted that CTR shift has been noted on DIP optoisolators through temperature cycle. This
shift is attributed to mechanical stress caused by unequal coefficients of expansion of the various parts
of the optoisolator. Considerable difference is noted from manufacturer to manufacturer, and the
General Electric design proves stable, indicating the excellence of design. No statistically significant
difference in reliability characteristics has been observed between the GE sandwich, reflector and bar
construction optoisolators. It is assumed that a muchJarger data base is needed to show any difference.
80
BEST ESTIMATE FAILURE RATE
10
" " '"

en
0::
I @
0
W
t- Q O ~ ® PERIODIC COMPARISON IN TIME POINTS
<C
a: 0:: CD l. 346 units, pre 1976,5.6 x 10' unit hrs.
W IlJ
a: Q. 2. 1203 units, 1978-79, 8.5 x 10' unit hrs.
~
:;)
.J I-
Z
3. 950 units, 1980,3.9 x 10' unit hrs.
<C LIJ
u. u
50.1
Q. TEST CONDITIONS •
IF =60mA
" i'\. FAILURE
AGE ANALYIS
*Test conditions exceed maximum ratings
IC =20mA
'\
0.01
VCE = 1,5V
100 1K
KI
10K
I
STRESS TIME - HRS.
FIGURE 3.2: OPERATING LIFE FAILURE RATE DECREASE WITH TEST TIME
W
:;)
.J 0
~ ~::~::
:::t"GE"
V
Z<C
-:>
W.J
UGE'{
C!l<C
Z-
.V/
<C!:: -10
IZ
0-
a:t-
t- Z
OW
0 -20
a: "M"
W
Q.
OFF GRAPH UNITS ARE
FAILURES. CATASTROPHIC
'"H" and DEGRADATION
I I
0.01 0.1 10 50 98 99.99
PERCENTAGE OF UNITS OBSERVED
FIGURE 3.3: 6 PIN DIP OPTOISOLATOR RELIABILITY TEMPERATURE CYCLE (-55°C TO + 150°C, 10 CYCLESI EFFECT ON
CTR 90 TO 100 UNITS EACH TYPE, 1980 DATE CODES
3.3 RELIABILITY PREDICTION OF CIRCUITS CONTAINING IRED's

The IRED phenomenon of light output decrease as a function of the time current flows through it,
has been mentioned previously. This phenomenon is observed in all diode light and infrared emitters. 34
The liquid epitaxial processed, silicon doped IRED provides superior performance in this regard. Still,
this presents a dilemma to the circuit designer. Adequate margins for bias values require predicting a
minimum value of light output from the IRED at the end of the design life of the equipment. Based on the
results of tests performed at GE and at customer facilities (who were kind enough to furnish test data and
summaries) the GE Application Engineering Center has developed design guidelines to allow the
prediction of the approximate worst case, end of life, IRED performance.
81
TAB"E 3.6: SUMMARY OF TESTS USED TO OBTAIN IRED DESIGN,GUIDELINES
~
IFS
25°C 40°C 55°C 70°C 80°C 100°C
20
3mA 1000 Hr.
3rnA
20
5mA 1000 Hr.
I,5rnA
16 30 30 30
10mA 1000 Hr. 1000 Hr. 1000 Hr. 1000 Hr.
1, lOrnA 1, lOrnA 1, lOrnA 1, lOrnA
27 108
20mA 500, 1000 Hr. 1000 Hr.
1,5, 10, 20rnA lOrnA
20 20 20 60
25mA 1500 Hr. 1500 Hr. 1500 Hr. 1500 Hr.
lOrnA lOrnA lOrnA lOrnA
20 40
50mA 1500 Hr. 1500 Hr.
lOrnA lOrnA
20 30 313 30
60mA 1000 Hr. 1000 Hr. 1000, 3000, 5000 Hr. 1000 Hr.
1,5, 10,20, 60rnA I, lOrnA 1,1O,60rnA 1, 10, (jOrnA
20
75mA 1500 Hr.
lOrnA
79 30 30 120
100mA IK, 15K, ~OK Hr. 1000 Hr. 1000 Hr. 168, 1000, 1500 Hr.
1, 10, 60, l00rnA I, lOrnA I, 10,60, 100rnA 1, 10,60, 100rna
200 I
1A
3000 Hr.
Pulsed
1,1O,100rnA ,
This chart represents about 2.9 million device hours of operation on 924 dual in-line optocouplers and 311 hermetic IRED's.
SAMPLE
FORMAT OF DATA f»RESENTATION: TEST DURATION
IFM CURRENT
82
The basis of the prediction is the observed behavior of the ratio of light output after operation to the
initialvalue oflight output. It is also based on the observation that all devices do not behave identically
in this ratio as a function of time,but that a distribution with identifiable tenth, fiftieth (median) and
ninetieth percentile points exists at any time the ratio is calculated. Use of this tenth percentile ratio
(90 % of the devices are better than this) and the distribution of light output (or CTR for couplers) above
the specified minimum value allows the product of specified minimum light output and tenth percentile
ratio, predicted at end of life, to be used as a reasonable approximation of minimum end of life value.
Although this does not represent the worst possible case, no correlation can be found between initial
light output and rate of decrease in light output, so the percentage of devices expected to be less than the
guideline derived number approaches zero~ These guidelines as can be noted, are based on large sample
sizes. To make the guideline development less obscure, the discussion will trace the steps followed in
defining these design guidelines and, in the process, develop the guidelines. Although the majority of
data is taken on General Electric GaAs IRED's, it is found that the same general model fits the General
Electric GaAIAs IRED.
Since the original General Electric model was published, based on data generated prior to 1976,
considerable effort has been expended to define and minimize this decrease. Response of the light
output of the IRED to operating time is considered to be comprised of two factors, stabilization and
degradation. Further, two types of degradation are apparent, short-term and long-term degradation.
Short-term degradation can be virtually eliminated, while long-term degradation can be minimized
through process and material control. These factors can be visualized through plots of the ratio of IRED
poet) Poet)
Poet) Po(l)
I
I
I
0.5 ---4 - ---,
STABILIZATI.ON SHORT TERM LONG jTERM I
DEGRADATION DEGRADATION I
I I
I I
~ 10DHR t ~IOOHR t ~ 50HR 1:
OPERATING TIME OPERATING TIME LOG OPERATING TIME
FIGURE 3.4: FACTORS AFFECTING IRED OPERATING OUTPUT POWER
output power, as it is operated, to its initial value (Le., normalized output power vs. operating time).
Various items have been identified as affecting these factors - crystal structure, impurities, mechanical
and thermal stress. Most of the published information is of such gross definition that it only identifies
the worst offenders. Rapid methods of assessing IRED performance have likewise proven
disappointing. As a consequence, the tedious life test is the measure of performance improvement.
Analysis of life test results to characterize the change in power output is complicated by the
difficulty in separating the magnitude of effect of each factor and the fact that these magnitudes can be
functions of both stress conditions and IJ1onitoring conditions.
83
The problems with predicting response are the variety of test conditions at which both stress and
measurement data have been taken,_ and the spread of data at the readout points. It was recognized that
the decrease in light output was accelerated by either stressing the IRED harder, i.e., at a higher current
(IpS> and/or temperature, or by monitoring the test results at lower current (IpM) levels. Precise
acceleration factors have yet to be determined due to .this variability. Fortunately, circuit design
purposes can be served by a less precise model, which only attempts to serve the requirements of circuit
design. For this approach, as mentioned before, attention is paid to the lower decile of the distribution
of Po(t) and its change with operating time. The objective is to approximate the mid portion
of the longterm degradation plot with a straight line by utilizing data points beyond the short-term
factor effects. ...
Significant progress has been made in improving the General Electric IRED degradation since the
first model was published. This is illustrated by comparison of the data published at that time with
present units tested at the same stress levels. Present units are much more consistent than early units\
120
'1=60
110
o
-w
!;t::>100
0::-'
0::>
W-,
<>:
:
.. -- -. =---__
•
-
90%
__ 50°/0
10%
!l;~ 90
z ....
~~
........ BO
t- z
ZW
"'u
!Eel 70 19BI DATA
:>0.
U IFS/IFM =1
60
50
10 100 1000 10,000
STRESS TIME IN HOURS
120r-------,-------,--------,
120 '1=118
'1 =36
1I0r-------r--------,:----r--------1
-
-*- 90%
BEST FIT STRAIGHT

y- ~~
... ... ~~r
.
~
-. i ~.
~~
LINE LOWER DECILE
LONG TERM RESPONSE
,, •
,, ~
,
1975 DATA
IFS /I'M=6 ,,
,, 60~-------~-----~~-----_4
,
10,000
501~0------'7.10~0------1-,-J00LO---------'IO,OOO
VIRTUAL 100 1000
INITIAL STRESS TIME IN HOURS STRESS TIME IN HOURS
DIP PHOTO TRANSISTOR OPTOISOLATOR;IFS =60mA, Pd=3QOmW (T'REO"'80"C)
FIGURE 3.5: LIFE TEST RESULTS - ILLUSTRATING OBSERVED CHANGE IN IRED OUTPUT WITH OPERATING TIME
This is evident in the smaller, tighter distribution with larger sample sizes. (See Figure 3.5). Data taken
at a greater variety of conditions, both more highly accelerated and simulated use conditions, and more
precise readouts, indicates the original model was quite conservative for most applications. Recent data
indicates the GaAs IRED, to a lower decile definition, degrades less than GaAIAs. The most precise
data, with temperature and detector compensation, suggests that lower current operation (Le., lower
Ips), at a givel'l stress temperature and Ips/lpM ratio, has the higher degradation rates within the model.
This conclusion is not consistent with all data, but implies that conservative circuit design should allow
more margin for degradation at low (s 3mA) IRED bias currents.
84
The IRED degradation model predicts the slope of long-term lower decile response of the
distribution of the ratio of light output after operation to initial value. This response is plotted in a
straight line against the logarithm of operating time. Extrapolation of this straight line towards zero time
defines a virtual initial time, when it intersects the initial value. Observations indicate the virtual initial
occurs at or before 50 hours. For purposes of circuit design, the assumption of 50 hours for virtual initial
time will be utilized to assure conservative design. The slope of this lower decile line can be defined in
percent drop in light output per decade time. Slope and virtual initial completely define the predicted
IRED output with operating time.
This model includes all GE DIP optoisolators, discrete IRED's, both henpetic and plastic, and all
H23-based product families. Note that GaAs and GaAIAs emitters differ in slope.
The question naturally arises of the applicability of this descriptive model to time periods beyond
the one and five thousand hour times where the majority of the tests stopped. Fortunately, tests have
been completed on discrete IRED's for 30,000 hours. These units were manufactured prior to 1970, and
illustrate the improvement in IRED technology over the last decade. The results of these tests indicate
that nothing unexpected happens at extremely long times, as can be seen in Figure 3.6 .
....
~ 110 #
....
.....
~'.,001-~~~;;~;j---1
-
1/90 PERCENTILE
::>
- -.
0100
~
~ 90
-. "- "' ..>
"'3
......
...
Z
~ 80
IOPERCENTILE/ ~ I-- i~ 90f-----~f_"'o..c__':::>O"OO:::_,.::!""+----_I
o 50 PERCENTILE ~~
DISCRETE IRED .... 1-
~ 70 TEST CONDITIONS ZZ
t'! IF: IOOmA ~~ I". = 60mA
..
ffi 60
50
Tc = 25-C
- 14 DEVICES
--- !jffi
u Q,.
!!;
80 T.. ,. 25·C - - t - - - - . . . " . , . - t - - - - - - I
10 DEVICES
10
I 10 10 2 J 10· STRESS TIME - HOURS
rillE IN HOUItS
FIGURE 3.6: LONG· TERM IRED LIFE TEST RESULTS FIGURE 3.78: EFFECT OF MEASUREMENT
CURRENT ON SLOPE
DUAL INUNE COUPLERS

TEST CONDITIONS
IFS = 2!5mA
I
~O·;E~;EAS PER S T R E S S - - - - + - - - - - i
10 100 1000
STRESS TIME - HOURS STRESS TIME - HOURS
FIGURE 3. 7b: EFFECT OF STRESS FIGURE 3.7c: EFFECT OF STRESS CURRENT ON SLOPE
TEMPERATURE ON SLOPE
When the response (bf!st straight line) of various test conditions is plotted on a single graph, the
acceleration due to raising stess current (Ips) is easily seen. Higher temperatures during stress cause the.
same effect, and can be accomplished by raising the ambient or by self-heating (in a optoisolator by
dissipating power in the output device). Lowering the current at which the IRED light output is
monitored, (IPM) also accelerate the phenomena, but analysis of many test results indicates that the ratio
of Ips/IPM is the key factor-determining the slope dependence on bias.
85
When the temperature effect is plotted as an acceleration vs. temperature, a fair straight line fit
is found, as illustrated in Figure 3.8. This temperature acceleration factor represents the ratios of
the slopes of the lower decile lines of various temperature stresses. The fit is not perfect, but is good
enough to be useful. The model contains data on all current IRED package options and appears to
fit all equally.
/ r'
.
4
V 4
,,~
V -
V
V
I ./
~
20 30 40 50 60 70 80 90 100
IFs/IFIi OPERATING TEMPERATURE - °C
STRESS TO MONITOR IRED
FORWARD CURRENT RATIO
Bias Current Effect Temperature Effect
FIGURE 3.8: IRED OUTPUT VS. TIME-SLOPE PREDICTION CURVES ASSUMING A VIRTUAL INITIAL TIME OF 50 HOURS
Utilizing the highest observed slope at Ips = IpM, a conserVative equation for output power can be
derived for each emitter material. Since most applications provide a relatively constant bias current to
the IRED whenever energized, these equations provide the means to determine bias current required at
equipment end of life. Note that degradation occurs only when current flows in the IRED. The'IRED
power output (Po) at time tx can be predicted from:
GaAs: Po(tx) = PO(to) [1 - 0.04(0.024 TA + 0.4) log (tx ..;- 50)];
GaAIAs; PO(tx) = PO(to) [1 - 0.06(0.024 TA + 0.4) log (tx ..;- 50)];
when constant current bias fortx hours, 25°CsTA(ambient temperature, 0c) STj max., and tx~ 168
hours is assumed.
High current pulse operation degradation has been studied at one point. 200 each TO-IS GaAs
IRED's have been operated for 3000 hours with lA pulses, SOJLsec wide, 60 pulses per second, at 3SoC.
Analysis of the degradation data indicates that only ,the time current flows through the IRED causes
degradation (ISO hours accumulated for these units) and that the degradation follows the model
responses. The degradation rate appears to be slightly higher under this pulse condition, indicating a
higher stress on the chip than the D. C. bias test. This is logical when the cyclic thermal and mechanical
stress on the chip due to pulsing is considered. At thistest condition, the GaAs slope was in the center of
the GaAIAs area of Figure 3,S. Based on this data, it is concluded the equation for GaAs pulsed
operation is:
PO(tx) = PO(to)[1 - 0.06(0.024 TA + 0.4) log (~~x)]

where R is the duty cycle of operation.
86
!-IOO
:J
~ ~
:J
o ::::-r-t- _JSIIFM
.i r-_
10
a:
w
r---.~ I-- r--
~ "-.!FSIlFM&IOO
090
a. "-..
..J
« r---.
!-
' ....
Z ........
IL
°eo
!-
Z
IFS·I.OA
P.w. & ao,.S
"
w f & 60Hz
o TA ~ 38"C
a:
w 10 100 1000 10.000
a. TEST TIME IN HOURS
I i I I
ru I 10 ~
OPERATING TIME IN HOURS <0.48% duty cycle)

FIGURE 3.9: GaAs IRED PULSED OPERATION
The following example illustrates the use of this model for circuit design. A CNYI7-III
phototransistor output optoisolator is desired to provide an input to a logic circuit. To provide a logic
zero the isolator must sink 2. 5mA at O. 3V. The CNY 17-III specification assures this capability at IF =
10mA initially. Equipment design life is 10 years (8.8 x 104 hours) and the worst case duty cycle of
operation is 80% "on" time. Ambient temperature in the equipment is maintained below 65°C.
Summary of example calculations
Device ,.-- CNYI7-III
IRED material - GaAs
Temperature - 65°C
Time - 8.8 x 104 x 0.8 = 7 x 104 hours
Po(a/Po(to) = 1 - 0.04 [0.024 (65) + 0.4] log C~JQ4)

= 0.75
Therefore, the IRED bias must be 10/0.75 = 13.3mA, to assure end of life operation. Note that this
example has not considered the effects of temperature, tolerances, or other components aging on IRED
current requirements.
The design guidline, unfortunately, is only valid for the G.E. IRED's and DIP couplers. Life tests
of competitive units at both maximum rating and accelerated test conditions indicate a wide variation of
performance exists in the industry.
Transistor Photocoupler Data, Observed Lower Decile

Data, 1980 Date Codes 20-30 SampleslType.
Test Conditions
Stress: IF =60 mA, Pd =300 mW
Measurement: IF = 10 mA, VeE = 10 V CTR
OPERATING HOURS
FIGURE 3.10: IRED DEGRADATION. RATE. COMPETITIVE COMPARISON. ACCELERATED .LIFE TEST RESULTS.
Although some manufacturers have made improvements in their performance since the first
edition of the General Electric Optoelectonics Manual, considerable room for improvement exists in
the industry. In applications where IRED degradation can result in undesirable malfunctions, it is
recommended that vendor evaluation and reliability eIihancement screening procedures be performed.
87
; ". '.i'I' ·;'f"
3.4 RELIABILITY PREDICTION IN APPLICATION ·1 t,t:::: i .
Predicting component reliability in applications requires a failure rate prediction model. Although
MIL-STD-217D provides this type of model, it is based .on i.Qdustry perforn:tance and appears strongly
biased towards hermetic packaged, JAN-screen~d devices .. A wide variety of reliability assessment
information has been published and can be utilized to make predicti()ns based on test data of specific
device types and the actual environment they are to be applied in. This method requires that acceleration
factors on each stress be determined, and that the stress in applications and in accelerated tests be
defined; then the failure rate in accelerated tests can be proportioned to use condition failure rate. The
use condition failure rates, by stress, are summed to provide overall failure rate. Advantages of this
method include the fact that it is specifically tailored to the component and application, and that
potentially high failure rate details are identified to be dealt with in the most economical fashion.
Disadvantages include the assignment of stress acceleration factors, a wide variety of which have been
published, and the availability of applicable accelerated stress data.
The preceding data provides an excellent base to assess the reliability of General Electric
optoelectronics components. If the designer provides adequate margins for tolerances, IRED
degradation, and has a viable worst case circuit design, appropriate acceleration factors will allow these
data to predict component reliability. The specific stress acceleration factors required are: detector
blocking voltage and temperature effects; humidity intrusion effects; and temperature variation (due to
power and environment) effects. Note the IRED is not considered separately, because mechanical
defects are covered by temperature cycle and efficiency degradation by IRED degradation guidelines.
The sources of acceleration factors require engineering judgment to identify the most valid for the
specific device. For the variety of DIP optoisolators GE produces, the author prefers the following
acceleration factors based on experience and familiarity with available literature:
TABLE: 3.7: STRESS RESPONSE ACCELERATION FACTORS
STRESS DEVICE ACCELERATION FACTOR-*A SOURCE

GE 6th Ed. SCR Manual,
Blocking PhotoSCR 0.65 (V2 - VI) - 4323
Vm T2
(..!.. _..!..)
TJ Fig 19.3 I
other discrete
Blocking/Power
detection
- 3327 (..!..
T2
- ..!..)
TJ
GE Pub. 300.1, Fig. 9
Blocking/Power IC detectors to be determined

I 1 . h2 Microelec. & ReHab.,
1987 <T: - 2
Humidity Intrusion All T2) - 2.424 (hi - 2)
Vol. 20, pg. 219
Temperature Cycle All 328 (t,~J - t,lT) independently derived
*The ratio of stress level I response to stress level 2 response is F .R. lIF .R. 2 =lOA.
CODE: F.R. ...;. failure rate

V - blocking voltage
T - junction temperature in Kelvin·
h - percent humidity .;- 100
f::, T - range junction temperature changes
1 & 2 subscript - associates stress level
m subscript - maximum rating
88
It should be noted that this is strictly accurate only for responses that show a constant failure rate in time
or to calculate the times that an identical proportion of failures occur for a linear stress response. The
GE DIP optoisolator has a decreasing failure rate as a function of time, which will make these
estimates conservative.
An example, using the same CNY17-III used to calculate the effect of IRED degradation, will
illustrate the prediction process. The temperature cycle calculation will assume a 25°C to 65°C cycle
per day for equipment power up, power down, and tum-on - tum-off of the optoisolator every 30.
seconds. This will cause ajunctiontemeerature change of (13.3mA x 1.2V) -:- 1.33mW/oC = 12°C
and (2.5mA x 0.3V) -:- 2mW/oC i.e. 12.4°C total.
• Temperature Cycle: Daily - AD = 328 (65 ~ 25 - 150 -\-65») ; lOA = 4.7 X 106
Switching - As = 328 ( 11.4 - 150 _1 ( _ 65») ; lOA = 8.4 X 1024
Failure Rates: 0.000035/cycle -:- 4.7 X 106 x 365 day x 10 yr. = 2.7 x 10-8
0.OOO035/cycle -:- 8.4 X 1024 x 2 x 60 min. x 24 hr. x 365 x 10
= 4.4 X 10-23
Temperature Cycle Failure Rate = 2.7 x 10-8
• Power Life: Accelerated test - T2 = 75°C (DIP at 300mW) + 25 + (60mA x 1.5V)

-:- 5.5mW/oCt= 116°C = 389°K .
Application stress - TI = O.4°C + (13.2mA x 1.2V) -:- 5.5mW/oC + 65
= 68.3°C = 341.3°K
A = - 3327 (3~9 - 34~.3) ; lOA = 16
Failure Rate = 0.0064 x 10-3 x 7 X 104 hrs -:- 16 = 2.8 x 10-2
• Humidity Life (assume ambient humidity 15% .at 65°C, 85% at 25°C)
Power down - AL = 1987 (2~8 - 3~8) - 2.424 (0.85 2 - 0.85 2), lOA = 13
Powetup - AH = 1987 (3j8 - 3~8) - 2.424 (0.15 2 - 0.85 2), lOA = 106
Failure Rate = 0.0029 x 10-3 (7 X 104 -:- 106 + 1.8 x 104 -:- 13) = 5.9 x 10-3 •
tcoupledthermal impedance, emitter to detector.
RQ
The sum of these is the total failure rate ofthe CNYI7-II1 optoisolator expected over the 10 year
equipment life, Le. 2.7 x lOe8 + 2.8 X 10-2 + 5.9 X 10-3 =3.4 percent. This isan averagt; failure rate of
385 x 10-9 per device hour for 8.8- x 104 hours. Note that the most significant items are the.
Power Life stress followed by the 85% humidity estimate at 25°C (equivalent to a moist tropical
environment). The failure rate can be improved by submitting the standard CNY17-III to reliability
enhancement screening procedures, of course.
3.5 RELIABILITY ENHANCEMENT OF OPTOISOLATORS

The optoisolator is unique in its application, construction, and the factors that affect its reliability.
The major applications typically use the optoisolator to carry information between electronic logic and
some form of power system. These are typically in relatively high cost systems where downtime is
costly and sometimes critical. This places a premium on the reliability of the optoisolator, which is
a reasonably-priced component subject to normal marketplace competitive pressures. These pressures
are significant since over 10 manuf~cturers supply the common six-pin plastic· dual in-line
package optoisolator.
Each manufacturer utilizes unique semiconductor pellets for the light -electrical conversions. Each
has unique methods and materials used to mount, connect, provide light path, and isolate ambi~nt
effects. Therefore, a wide variation of both reliability performance and consistency might be expected
throughout the industry. Published studies confirm this and illustrate the variety of failure modes unique
to the optoisolator, when compared to both discrete and integrated circuit semiconductors. 31 ,33,34
The uniqueness of the optoisolator does not mean tpat accelerated semiconductor reliability
assessment test procedures are inappropriate to identify failure modes or screen out potentially
unreliable devices. It means that these test procedures must be evaluated to identify failure modes and
cost effective ways to remove potential application failures. Where high sensitivity to f~ilure and/or
high stress levels are present extra screening for reliability enhancement maybe desirable. The
available information indicates several levels of increasingly effective screens are possible.
Most optoisolator manufacturers can identify a cost effective reliability enhancement screen for
their product. However, there may be conflicts between this action and other goals or priorities of the
manufacturer. An optoisolator user can do the same for a given device, but is vulnerable to.
manufacturing process differences, -both identified and unknown. The best compromise is a test
sequence based on a broad sample of optoisolator data covering a number of manufacturers. This was
impractical until recently.
In 1981 several large sample phototransistor optoisolatorreliability studies were published in

various parts of the world. These data have been analyzed to identify optoisolator failure modes and
effect.ive screening procedures. These procedures have been modified, as required, for the various
detectors used in optoisolators (Le .. , photodarlington, photoSCR, etc.). Such modifications are based
on experience with the specific type of discrete semiconductor device. In these tests, the high stress
levels are expected to accelerate failure response,when compared to application conditions. It is noted
that the failure rates, perunit time, decrease as stress time increases (with the exception of storage life,
which appears to show a wearout mechanism on specific designs). It is also apparent that different
specific designs have different weak points. This reliability enhancement screening procedq.re will be_
designed to cost effectively address all these weak points. Table 3.7 shows the reliability test data for
eleven manufacturers of optoisolators.
90
TABLE 3.8: RELIABILITY TEST DATA COMPILATION
(DIP .PHOTOTRANSISTOR OPTOCOUPLERSI
t MANUFACTURER
Stress Conditions * R.O.
Hrs. 1 2 3 4 5 6 7 8 9 10 11
0(0) 0(0) 10(1) 0(0) 0(0) 0(0) 0(0) 0(0)
168
IRED Fwd. Bias
80 --::m- ---w- --::m- 60 60 70 10
0(1) 11(3) 10(4) 0(10) 0(0) 1(0) 0(0) 0(0)
1000
80 --::m- ---w- 70606070 10
0(0) 0(0) 0(1) 0(0) 0(0)
168
High Temperature 1010 1010 10
Reverse Detector Bias
0(1) 0(0) 1(1) 0(0) 2(0)
1000
1010 1010 10
0(0) 0(0) 1(0) 0(1) 1(0) 0(1) 0(0) 0(0) 0(0) 1(3) 0(0)
168
Operating Stress
2710565---W-2935252535281O
1000 1(4) 1(1) 3(0) 0(10) 1(4) 1(1) 0(0) 0(0) 0(0) 2(4) 0(0)
2710565---W-2935252535281O
0(0) 0(0) 0(0) 0(0) 0(0) 0(0)
168
Storage Life
2525 25252525
0(0) 1(0) 0(0) 13(1) 0(0) 5(0)
1000
2525 25252525
254 19 3 3 0 1 36
Temperature Cycle
200 700 500 100 590 500 500 500 100
0(0) 0(0) 0(0) 0(0) 0(0) 0(0) 0(0) 0(0)
168
Humidity Life
45 35---W- 35252535 10
0(0) 0(0) 3(0) 0(0) 0(0) 0(0). 0(0) 0(1)
1000
45 35---W- 35252535 10
Total units tested: 2594 1.269 x 106 device hours of stress

*See Section 3.6 for data summary containing specific conditions, and sample sizes.
Summation of Catastrophic Failures - 1(1) - Summation of Degradation Limit Failures
~ - Summation of Samples Tested
Manufacturers Tested: Fairchild, General Electric, General Instrument, Honeywell, Litronix, Motorola, RTC,
Sharp, Siemens, Texas Instruments, TRW
The data shows 129 catastrophic failures and 42 parametric degradation failures on 2594 units.
The catastrophic failures, opens and shorts, are mechanical integrity faults. These faults are normally
screened out by temperature cycle testing. A comparison of temperature cycle failure-rate to
catastrophic failure rates, by manufacturers, generally confirms the expected effectiveness. It is also
noted that two manufacturers exhibited failure rates over 10% on this test. Screening procedures for
degradation failure modes can be defined by identification of the failure modes. Table 3.9 compares
degradation failure modes for five stress types.
91
, ' : , . '. .
. TABLE 3.9·: SUMMARY OF11 MANUFACTURERS' RELIABILITY PERFORMANCE . .

FOR DEGRADATION fAILURE MODES ..
.
Failure Criteria # of Mfrs. #of Mfrs.
Test Catas- Failing Failing
Degradation Ouration
trophic Degradation Catastrophically
10% of units fail 10% of 168 Hrs 0 0
IRED Fwd. Bias CTR degradation units 1000 Hrs 2 1
limit· fail·
High Temp. 10% of units fail 10% of 168 Hrs 1 0
Reverse Detector leakage or CTR units 1000Hrs 3 2
Bias limits . fail
Operating
leakage or CTR units 1000 Hrs 4 0
Life
limits fail
Storage
leakage or CTR units 1000 Hrs 0 2
Life
limits fail
Humidity leakage or CTR units 1000 Hrs 1 0
limits fail
• All tests were at or beyond maximum ratings.

• See Section 3.6 for data summary.
• From date code analyses all units were manufactured between early 1979 & early 1981.
Based on these data, storage and humidity tests show no promise as screening tools. Three types
of defects appear common in the summary:
Mechanical- This is related to package material compatibility & construction.
Detector Pellet - Related to instability in hFE or leakage current.
IRED Pellet: - Related to light output degradation.
Analysis of failures, when available, tends to confirm the implications ofthe data. Defects noted
as causes of failure were (in no particular order):
• Mechanical, open
- broken bond wire at dielectric interface
- bond wire lifted off pellet bond pad
- epoxy pellet mount lifted off lead frame
- pellet bond pad lifted off pellet
- bond wire break at wedge bond heel
92
• Mechanical, short
- bond wire droop to lead frame
- bond wire droop to pellet edge
• IRED pellet degradation
- light output degradation on forward bias
- leakage increase due to pellet flaw
• Detector pellet degradation
- hpE , instability,
- leakage increase due to visible pellet flaw
- leakage increase
- breakdown voltage drop due to leakage increase
Note that the apparent wearout in 150°C storage was due to both epoxy pellet mount and bond wire
failures. Gross lumped failure rates observed are 6.8%, which, when the cause could be identified,
break down to:
• Mechanical- 5.0%
• Emitter Degradation - 0.7%
• Detector Degradation - 0.1 %
• Emitter and/or Detector Degradation - 1.0%
• Specific tests showed degradation failure rates up to 5.9 %, while one manufacturer exhibited
failure rates up to 70% on IRED bias testing.
THIS IMPLIES THAT A RELIABILITY ENHANCEMENT PROGRAM MUST ASSESS ALL
PARTS OF THE OPTOCOUPLER DEVICE TO BE EFFECTIVE. There is no one-to-one correlation
between reliability test failure rates and field failure rates in any given application. The tests illustrate
weak areas that can cause field failures. A reliability enhancement program must attack these weak
areas to significantly reduce field failures .
.Cost of screening also enters into the design of cost effective reliability enhancement programs. A
list of possible reliability enhancement tests, in order of increasing cost, illustrates this:
Estimated
100% Screening Procedure Relative Cost
Tightened Parameter Limits Ix
High Temperature Storage 3x
Temperature Cycle & Continu'ity 4x
High Temperature Blocking lOx
Forward Bias Conduction 12x
Operating Life, All Junctions Biased 16x
Combining cost, failure mode, and time to failure information from the teSt summaries indicates:
• Many of the mechanical failures can be removed using extended temperature cycling. Detailed
analysis of the individual data sets indicates a decreasing failure rate to 100 cycles, -55C to
+ 150C, for all but two manufacturers, with several increasing in failure rate beyond 200 cycles.
Analysis also indicates the need for high temperature continuity testing of all wire bonds, at low
voltage and current, following the temperature cycle;
• Pellet operating stress tests are required to identify IRED light output degradation, and detector
hpE (gain) or leakage instability. Analysis of failure rate data, by manufacturer, indicates neither
high temperature blocking stress nor conducting stress can in themselves ensure a significantly
reduced failure rate in ali applications.
93
The operating stress is most effective, and less costly than doing separate tests,- in sequence, for
each failure mode. In addition, study of IRED degradation indicates a minimum test time of 160 hours is
required to quantify this phenomenon. Increased IRED response is noted at higher forward stress
current, within device ratings. Increased response-is noted on the detector at higher power levels,
(which raises temperature) and higher voltages. Since the detector response is generally more rapid than
the IRED, and dissipation should be at a maximum le:vels, the stress voltage is less critical and can be
selected to provide best control of operating conditions. The limits on detector bias voltage are normally
0.25 to 0.9 times maximum rated voltag~.
In some cases, the connections available to the optoisolator do not allow all biases to be optimized
simultaneously. In such cases, power dissipation is controlled by utilizing a detector voltage supply and
load resistor selected to dissipate maximum rated power when the detector bias current drops half of the
supply voltage across the resistor. Feedback via the IRED can usually keep power dissipation within
, 10% of the desired value. In simpler cases, detector bias current and voltage are easily set by standard
techniques. These cases. are illustrated for simple detectors by the circuits shown in Figure 3.11.
/
~
~
I
/ "
I
I \
+
\
\ , ...... VEE
\ , ....
CIRCUtt 1 (SIMPLE) CIRCUIT 2
FIGURE 3.11: BURN-IN CIRCUIT CONFIGURATIONS.
The recommended reliability enhancement program uses temperature cycles and operating stess to
identify potential field failures. The optimal stress levels deduced from this data, and six-pin DIP
ratings, are:
Temperature cycle: -55 to + 150°C, 10 cycles; 12 minute dwell at extremes, 3 minute dwell at
25°C, followed by 100°C continuity check.
Operating stress: P d = 300mW, IF =60mA if possible, t = 160 Hrs.
For the General Electric optoisolator, the recommended biases and operating stress are: .
CIRCUIT 2
Isolator CIRCUIT 1 DETECTOR BIAS
Family VEE RE Voo RL
IE Vo 10 V () V () PIN 4 PIN 5 PIN 6
H11A,B,G 60mA ZOV 15mA Minus Plus Ref.
H11D 60mA 150V 2mA Minus Plus Ref.
H11C 5V 51 200 lOOK Open Plus Minus
H11F 5V 56 30 750 Minus Plus Minus
H11J 10V 1.1K 250 43K Minus Plus Minus
H11L 5V 56 12 0 Open Minus Plus
It is anticipated that this screening sequence will be ~ 90 % effective in removing potential failures
in commercial/industrial applications over a large population of optoisolators.
94
· At lower unit cost, for comparison, temperature cycle alone would be expected to be 40 % to 60 %
effective. A temperature cycle followed by a 16Hr., 125°C detector HTRB would be expected to be
50% to 65% effective for the same conditions.
3.5.1 Data Summary

The specific test data and sample sizes which form the basis for this reliability enhancement
information are as follows:
Sample
Test Stress Conditions Duration
Mfrs. Units
IRED Forward Bias 6 240 TA = 25°C, Ips = 100mA 2000 Hrs
6 120 T A = 70°C, Ips = 50mA 2000 Hrs
6 60 TA = 70°C, Ips = Maximum Rating 1000 Hrs
High Temperature
Reverse Bias on 6 60 TA = 150°C, VCB = 24V, VEB = 4V 1000 Hrs
Detector
Operating Stress 6 150 TA = 25°C, VCB = 20V, IE = 15mA,Ip =
60mA 1000 Hrs
6 60 TA = 25°C, Ic = 2.5mA (10% Duty Cycle), 1000 Hrs
Ip= Maximum Rated
5 180 TA = 25°C, VCB = 20V, IE = 15mA, IF =
60mA 1000 Hrs
Storage Life 6 150 TA = 150°C 1500 Hrs
Temperature 6 2700 25°C to 125°C, continuous continuity 5 cycles
Cycle monitor 10 min. ramp up & down, 20 min. ,
125°C dwell
6 300 -55°C to 25°C to 125°C to 25°C, 400 Cycles
12 min. dwell at extremes, 3 min. 25°C dwell
6 700 -65°C to 25°C to 150°C, 12min. 100 Cycles
dwell at extremes, 3min. dwell at 25°C
Humidity Life 6 60 TA = 40°C, R.H. = 93%, VISO = 500V 1000 Hrs
6 150 TA = 85°C, R.H. = 85%, No Bias 1500 Hrs
95
~~~
MEASUREMENT OF OPTOELECTRONIC
DEVICE PARAMETERS
4.1 IRED PARAMETERS

Measurement ofIRED parameters is relatively straight forward, since the electrical parameters are
those of a diode. They can be measured on test equipment used to measure diode parameters, from the
bench set-up of two meters and a power supply to the most automated semiconductor tester.
Light output measurements require the use of a spectrally calibrated photo cell or a calibrated
thermo pile of at least 0.4/1 (tcm) in diameter. This allows collection bhll the light power output of the
IRED, matching the specification method and guaranteeing correlations of measurements. If pulse
measurements are desired, a calibrated silicon photo cell is necessary because of its response time. It
would be used in conjunction with a pulsed current source, and calibrated current probe to measure
photocell output and an oscilloscope of sufficient speed and accuracy to provide the desired result. The
photocell is the only device which, is not a common electronics laboratory item, and such devices can be
procured from sources such as Ealing Corp., E.G. & G. Electro Optics Div., United Detector
Technology, and others.
The photocell should be calibrated at the wavelength of interest, traceable to the Bureau of
Standards. Slightly different mechanical couplings to the photocell are used for each package type. The
H23 emitter is placed, touching the cell cover glass, with the lens over the cell center. The hermetic
emitters are placed in an aluminum collar, a~ illustrated. This arrangement will correlate within 10%
with total power output readings taken using a calibrated integrating sphere.
IRED UNDER TEST

DETAILS OPERATION
FIGURE 4.1 ALUMINUM COLLAR MEASUREMENTS TEST FIXTURE
Radiant intensity (IJ can be read with the same photocell in a different mechanical arrangement. In
this case, the photocell is centered behind a thin, flat black aperture plate. It is placed in the housing that
holds the IRED centered on the photocell and aperture centerline and spaced such that the IRED
reference plane is over 4cm from the aperture. The aperture and photocell are sized and placed such that
all irradience that passes through the aperture falls on the photocell active area. IRED distance and
aperture size determine the solid angle of measurement. The housing that holds the IRED, aperture and
photocell must be designed to eliminate reflective path photocell illumination.
97
CUTAWAY VIEW
FIGURE 4.2 RADIANT INTENSITY TEST FIXTURE
4.2 PHOTO DETECTOR PARAMETERS

The measurement of electrical parameters of the photodetectors is identical to measurement of
non-light sensitive devices, except for the light sensitive parameters. Such measurements are described
in many common references and will not be detailed here. The most common problem parameter
encountered is the leakage current measurement with th.e base open, as ICEO is rarely measured on normal
transistors. Understanding the sensitivity to dynamic and ambient light effects will aid in solving this
problem. 3 Dynamic effects must be considered, because the open base has no path but junction leakage
to charge the junction capacitance. If the common, high source impedance bias circuit, for leakage
current is used, the gain of the transistor multiplies the junction capacitance (Miller effect) of the
collector base photodiode ("'" 25pF), and provides a long stabilization time constant. Note the "double
barreled" effect of source impedance in that it is the resistance in the RC time constant and also is the
load resistor that determines voltage gain (Av "'" I1hie . RL . hfe.). These effects indicate I CEO should be
measured by appIlcation of the bias voltage from a low impedance supply until junction capacitances are
charged (now determined by the base emitter diode impedance), which can take up to 1OOmsec, (with no
external capacitances, switches, sockets, coaxial, etc. connected to the base) in a darlington. After
junction capacitance is charged, the current measuring resistor is introduced to the circuit by removing
the short across it. The charge balance at the base can be affected by the motion of conductive objects in
the area, so best reproducibility will be obtained with an electrostatic shield. The electrostatic shield can
also serve the purpose of shielding the detector from ambient light, the effects of which are obvious in
leakage current measurement.
Measurement of the light parameters of a phototransistor requires a light source of known intensity
and special characteristics. Lamps with defined spectral characteristics, i.e., calibrated standards, are.
available and, in conjunction with a thermopile or calibrated photocell and a solid mechanical
positioning system, can be the basis of an optomea~uring system. The lamp is placed far enough from
the detector to approximate a point source. Some relatively simple systems based on the response of a
silicon- photocell are available, but the assumption that all silicon devices have identical spectral
response is implicit in their use for optical measurements. As different devices will have slightly
different response curves, the absolute accuracy of these devices is impared, although excellent
comparative measurements can be made. Another method which has fair accuracy is the use of a
calibrated detector, L14C or L14N photodiode response for the phototransistors, to adjust the light
source to the desired level. This will eliminate spe~tral problems as the calibrated device has an identical
spectral response to the devices being measured. Accuracy will then depend on detector calibration,
basic equipment accuracies, ambient control and mechanical position reproducibility.
98
Spectral response measurements require use of precision filters or a precision monochromator and
a calibrated photocell or thermopile. As in the case of the IRED, it is recommended that these.
measurements be done by a laboratory specializing in optical measurements.
4.3 OPTOCOUPLER MEASUREMENTS

Measuring individual devices in the optocoupler is identical to measuring a discrete diode and a
discrete device of the type of detector being considered. The measurement of isolation and transfer
characteristics are not as obvious, and will be illustrated.
1. Isolation Parameters are always measured with the terminals of each device of the coupler
shorted. This prevents the high capacitive charging currents, caused by the high dv/dt's applied during
the measurement, from damaging either device. Safety precautions must be observed in these tests due
to the very high voltages present.
a)'. Isolation voltage is measured as illustrated below. Normally the surge voltage capacity is
measured, and, unless the high voltage power supply has a fast shutdown ( < O.5ILsec), the device under
test will be destroyed if its isolation voltage capability is less than the high voltage supply setting.
Crowbar techniques may be used in lab set-ups to provide rapid tum-off and forestall the test being
described as "destructive." Steady-state isolation voltage is usually specified as a fixed percentage of
the measured surge capability, although life tests are the proof of the rating. Application Engineering
believes conservative design practices are required in the use of isolation voltage ratings, due to the
transients normally observed when line voltages are monitored and the catastrophic effect, on the
system, of a failure.
i DIELECTRIC
SHIELD C
+
l_D,u.T~ _
r -,
I I
I ~
HIGH- I
VOLTAGE I ~
I
SUPPLY I
L T--- -.J
E
B
I
FOR VOLTAGES OVER 2600 Vrms, THE DIELECTRIC
SHIELD IS RECOMMENDED TO ELIMINATE AIR GAP
EFFECTS.
FIGURE 4.3 ISOLATION VOLTAGE TEST
b). Isolation resistance is measured at voltages far below the surge isolation capability, and has
less potential for damaging the device being tested. The test is illustrated schematically here, and
requires the procedures normally used when measuring currents below a microampere.
99
A C
D.U.T.
r
ELECTRO- I ~
METER I
I ~
L ---- E
8
K
FIGURE 4.4 MEASURING OF ISOLATION RESISTANCE
c). Isolation capacitance is a straightforward capacitance measurement. The capacitance of

couplers utilizing the GE patented glass dielectric process is quite independent of applied voltage and
frequency. Typical values are less than IpF, limiting the selection of measurement equipment.
The HIlAV wide glass dielectric has less than O.5pF, which requires socket shielding to accur-
ately measure.
A I SHIELD C
• D.U.T.
CAPACITANCE
r
I
-r--:--
~
...,
I
BRIDGE I I
I
L -rv--
-t--; - ..J
I
E
K
FIGURE 4.5 INPUT TO OUTPUT CAPACITANCE TEST CIRCUIT
2. Transfer Characteristics are normally easily measured on standard measurement equipment

as the IRED can be treated as the input terminal of a discrete device.
a). Current Transfer Ratio (CTR) can be tested as hFE of a transistor, both the phototransistor
and photodiode response,and Input Current to Trigger (1FT) can be tested as gate trigger current of an
SCR. Pinout and the connection of base-emitter or gate-cathode resistors normally require use of special
test sockets.
100
-
· I.
I
I
eTR-Ic/I.
,--------,
~
~
ICE
-
Ic I
~ 1------,
I
I
I
D.U.T.
-J"\..r-+
~
- IA
I
I I
I I
L ______ --.l Ica
L _____ ~
D.U.T. R6K
-
IE -
IK
FIGURE 4.68 CTR TESTED AS TRANSISTOR HFE FIGURE 4.6b 'FT TESTED AS SCR !GT
These sockets are illustrated above. Some commercial test equipment provides very poor
resolution readings of CTR in the hpE mode due to the readout system being designed for readings
greater than 10. This would correspond to a CTR of 1000%, a reasonable value for a darlington, but not
a transistor output coupler. Curve tracers are well suited for use' in this manner and some allow
measurements to be made with the IRED pulsed at high current and low duty cycles.
b). Switching times on simple detectors are measured using the technique illustrated below.
Isolation of the input device from the output device allows a freedom of grounding which can simplify
test set-up in some cases. The tum-on parameters are td - delay time and tr - rise time. These are
measured in the same manner on the phototransistor, photodarlington, and photoSCR output couplers.
The tum-off parameters for transistor and darlington outputs are ts - storage time and tf - fall time.
td - delay time. This is the time from the 10% point of the final value of the input pulse to the 10%
point of the final value of the output pulse.
tr - rise time. The rise time is the time the leading edge ofthe output pulse increases from 10% of
the final value to 90% of the final value.
ts - storage time. The time from when the input pulse decreased to 90 % of its final value to the point .
where the output pulse decreased to 90% of its final value.
tf - fall time. The time where an output pulse decreases from the 90 % point of its final value to
the 10% point of its final value.
SCR tum-off times are circuit controlled, and the measurement technique is detailed in the GE SCR
Manual.
101
Ic~ OR Ie.
SPEClFlED
t90"10--+------>1-
r..- _____ I
r I /1' II
INPUT II 1\
PULSE I PULSE I II' : \
GENERATOR I I 1/ I I \
I 110"lo.!.i-------1->.- '
RI ..... L -~ +-- - - -1-'- - - -TIME
,..........",., L..;.
----t ....... t. I
t I 1,...---4---- '
190"lo-t"----I----l
I II I II
II I II
OUTPUT 1 1 I I I II
PULSE I 1 II I I I \I
1 ' I
I
L - I
I II
4T--r--'1
t
l!..0"lo~-+----1""---""T
-TIME
--t td ~
I .:....t ...-t r
t--ts --t .-t,
I
a. Test Set (T1 and R2 Non-Inductive) b. Waveforms (Polarity Inverted for Clarity)
FIGURE 4.7 SWITCHING TIME TESTING
c). The parameters of the bilateral analog FET are of most interest at low level. Most of the
parameters of interest can be read in the simple circuit shown in Figure 4.8, but some precautions are
required to maintain accuracy. Kelvin contacts to the D UT are required and should insure. the
elimination of ground loop IR drop which can cause errors, dissimilar metal contacts or temperature
gradients causing thermal voltage errors and electromagnetic pick up errors~ The latter is especially
important when 60Hz ac data is generated. Signal levels must be controlled to maintain bias within the
linear region for accurate resistance measurements, since the maximum signal level for linear operation
is a function of the DUT resistance. This effect is quantified by testing the H11F as an element of a
resistive bridge and increasing the bridge signal level until distortion causes an output signal -of specified
amplitude. '
VARIABLE
CURRENT
SOURCE
0-60mA
¥'l~-'
\.
----
OUT
.I
...-*-......
VARIABLE VOLTAGE
SUPPLY, AC OR DC,
0-30V
VI READS V46
V2 READS 14 (I4= V2/R)
FIGURE 4.8 H11 FPARAMETER TESTING
d). Schmitt Trigger Parameter Measurement. The digital nature of the HllL transfer
characteristics make it quite compatible with standard digital logic circuit test equipment in standard
configurations.
e). Triac Driver Testing. The triac driver family of devices is tested using the same techniques
documented for discrete triac testing in the GE SCR Manual. The isolation between the IRED and switch
allows convenient gate polarity selection. Two items require special attention: commutating dV /dt and
zero voltage switch parameters. Most discrete triac test equipment for dV (c)/ dt requires modification to
lower the test current to the range of the triac driver. When testing zero voltage switch triac drivers, the
blocking voltage effect on trigger sensitivity must be considered.
102
SAFETY
5.1 RELIABILITY AND SAFETY
Optoelectronics may be used in systems in which personal safety or other hazard may be involved.
All components, including semiconductor devices, have the potential of failing or degrading in ways
that could impair the proper operation of such systems. Well-known circuit techniques are available to
protect against and minimize the effects of such occurrences. Examples of these techniques include
redundant design, self-checking systems and other fail-safe techniques. Fault analysis of systems
relating to safety is recommended. Potential device reaction to various environmental factors is
discussed in the reliability section of this manual. These and any other environmental factors should be
analyzed in all circuit designs, particularly in safety-related applications.
If the system analysis indicates the need for the highest degree of reliability in the component used,
it is recommended that General Electric be contacted for a customized reliability program.
5.2 SAFETY STANDARDS RECOGNITION

General Electric optoelectronic devices are tested and recognized by safety standards
organizations around the world. These organizations are primarily interested in the potential electrical
and fire hazards of optoisolators and the probability of IRED failure in smoke detector applications.
This is reflected in standards existing only for these particular device types and in the requirements these
standards place on the devices. As GE introduces new optoelectronic devices they are evaluated to
. determine if an applicable standard exists, and submitted for approval testing if such standards apply.
Currently GE optoelectronic devices are recognized by Underwriters Laboratories Inc. (U .L.) and
Verband Deutscher Elektrotechniker e.V. VDE Profstelle (VDE). The approvals, as ofthis date, are:
TABLE 5.1: OPTOISOLATOR APPROVALS
(ALL STANDARD GE OPTOISOLATORS ARE COVERED UNDER U.L. COMPONENT RECOGNITION
PROGRAM FILE No. E51868)
PART NUMBER VDE SPECIFICATION NUMBER CERTIFICATE NUMBER

CNY17 I
CNY17 II 0883/6.80,0110111. 72
22757
CNY17 III
CNYt} IV
CNY51 0883/6.80,0110/11.72 22758
GFH601 I 0883/6.80,0110/11. 72
GFH601 II
30415
GFH601 III 080411.83,080618.81
GFH601 IV
H11At
088316.80,0110/11.72 22755
H11A3
Ht1A2 0883/6.80,0110111. 72 22756
H11A4
H11AV1 0883/6.80,0110111.72
H11AV1A 0860/8.81,0806/8.81
H11AV2 0804/1.83,0750TII5.82 30440
H11AV2A IEC601 TI,IEC380,IEC65
H11AV3
H11AV3A
103
5.3 POSSIBLE HAZARDS
5.3.1 Toxicity
. Although gallium arsenide and. gallium aluminum arsenide are both arsenic compounds, under
normal use conditions they should be considered relatively benign. Both materials are listed
by the 1980 NIOH "Toxicology of Materials" with LD50 values comparable to common table salt.
Accidental electrical or mechanical damage to the devices containing these IRED pellets should not
affect the toxic hazard, so the units can be applied, handled, etc. as any other semiconductor device.
Although the pellets are small, chemically stable and protected by the device package, conditions that
can break these crystaline compounds down into elements or other compounds should be avoided.
5.3.2 Near Infrared Theshold Limit Value

The eye may be damaged from infrared light. The most applicable guideline to evaluate IRED '.s for
this hazard is the 1979 "American Conference of Governmental Industrial Hygenists Handbook. " On
pages 90 and 91 recommended threshold limit values for pulse (item 1) and long term (item 3) infrared
exposure are given. When operated within device maximum ratings, the maximum irradiance external
to the IRED package doesn't approach these TVL's for any of the present GaAs or GaAIAs devices.
To evaluate specific situations, the IRED pellet and its reflector represent a roughly Lambartian
source of about Imm diameter in all current discrete IRED types.
104
©Jl®~®
OPTOELECTRONIC CIRCUITS
6.1 LIGHT DETECTING CIRCUITS
Light detecting circuits are those circuits that cause an action based on the level oflight received by
the photo detector.
OFF
+I~~ON~__~~__~~________~
HEADLIGHT R1
SWITCH 22K 22K
r----:-,
I N.O. I
~~+-~--~I~ r-+-----------,
22K R2
2-2K I
22M I N.C.
I
I
L
LOW HIGH
BEAMS BEAMS
RELAY: 12V. 0.3A COIL: 20A. FORM C. CONTACTS OR SOLID-STATE SWITCHING OF 16A STEADY-STATE 150A COLD
FILAMENT SURGE. RATING.
LENS: MINIMUM 1" DIAMETER. POSITIONED FOR ABOUT 10° VIEW ANGLE.
FIGURE 6.1: HEADLIGHT DIMMER
6.1.1 Automatic Headlight Dimmer

This circuit switches car headlights to the low beam state when it senses the lights of an on-coming
car. The received light is very low level and highly directional, indicating the use of a lens with the
detector. A relatively large amount of hysteresis is built into the circuit to prevent' 'flashing lights."
Sensitivity is set by the 22Megohm resistor to about 0.5 ft. candle at the transistor (0.01 at the lens),
while hysteresis is determined by the Rl ,R2 resistor voltage divider, parallet to the D41K3 collector
emitter, which drives the 22Megohm resistor; maximum switching rate is limited by the O.I#LF
capacitor to ::= 15/minute.
6.1.2 Slave Photographic Xenon Flash Trigger

This circuit is used for remote photographic flash units that will flash at the same time as the flash
attached to the camera. This circuit is designed to the trigger cord or "hot shoe" connection of a
commercial portable flash unit and triggers the unit from the light produced by the light of the flash unit
attached to the camera. This provides remote operation without the need for wires or cables between the
various units. The flash trigger unit should be cOmlected to the slave flash before turning the flash on (to
prevent a dV/dt triggered flash on connection).
The L 14C 1 phototransistor has a wide, ;llmost cosine viewing angle so alignment is not critical. If
avery sensitive (long range), more directional remote trigger unit is desired, the circuit may be modified
using a L14G2lensed phototransistor as the sensor. The lens on this transistor provides a viewing angle
105
of approximately 10 0 and gives over a 10 to 1 improvement in light sensitivity (3 to 1 range
improvement). Note that the phototransistor is connected in a self-biasing circuit which is relatively
insensitive· to slow changing ambient light, and yet discharges the O.OlILF capacitor into the C106D gate
when illuminated by a photo flash. For physically smaller size, the C106D may be replaced by a C205D,
if the duty cycle is reduced appropriately.
2.2M
22M
HOT SHOE
OR CORD 0.01
CONNECTOR 1M
750K 0.1
3.3K
FIGURE 6.2: SENSITIVE, DIRECTIONAL, SLAVE PHOTO FLASH TRIGGER
6.1.3 Automatic Night Light Switches

These circuits are light level sensors that turn on a light when the visible light falls below a specific
level. The most common of these circuits turns on street lamps and yard lights powered by 60 Hz lines.
6.1.4 Line Voltage Operated Automatic Night Light

An example of this type of circuit is illustrated in Figure 6.3. It has stable threshold characteristics
due to its dependence on the photo diode current in the L14Cl to generate a base emitter voltage drop
across the sensitivity setting resistor. The double phase shift network supplying voltage to the ST-4
trigger insures triac triggering at line voltage phase angles small enough to minimize RFI problems with
a lamp load. This eliminates the need for a large, expensive inductor, contains the dV/dt snubber
network, and utilizes lower voltage capacitors than the snubber or RFI suppression network nor-
mally used.
The addition of a programmable unijunction timer can modify this circuit to turn the lamp on for a
fixed time interval each time it gets dark. Only the additions to the. previous circuit are shown in the
interest of simplicity. When power is applied to the lamp, the 2N6028 timer starts. Upon completion of
106
INCANDESCENT
LAMP
(4) DHD806
LAMP WATTAGE
SUGGESTED
MAXIMUM 33K
TRIAC 18K
120V 220V
SC141D 400W 800W
SC146D 550W 1100W 18K If'F 60Hz
SC151D 750W 1500W 20V
~
LINE
100
SC260D 1200W 2500W
5M
SC265D 2000W 4000W L 14C1 LIGHT
THRESHOLD
SENSITIVITY
C ~ 0.1 f' F, 100V FOR 120V LINE

.t 0.068 f'F,200V FOR 220V LINE
FIGURE 6.3: LINE VOLTAGE OPERATED AUTOMATIC NIGHT LIGHT
the time interval, the HIIC3 is triggered and turns off the lamp by preventing the ST-4 from triggering
the triac. The SGR of the HIIC3 will stay on until the L14Cl is illuminated and allows the 2N6076 to
commutate it off. Due to capacitor leakage· currents , temperature variations and component tolerances,
the time delay may vary considerably from nominal values.
Another common use for night light circuits is to tum on remote illumination, warning or marker
lights which operate from battery power supplies. The simplest circuit is one that provides illumination
DHD806
EMITTER 120K
1M
HIIC3 2N6028 22M .2N5172
,-------, CONNECT
I ~~~_+~Hr_+--~ 0.12 TO
CONNECT I LAMP
TO
2N6076 I 3.9M C
L_
10K
C PROVIDES ABOUT I MINUTE ON TIME Ip.F
COLLECTOR AND MUST BE LOW LEAKAGE
FIGURE 6.4: AUTOMATIC TURN·OFF FOR NIGHT LIGHT
when darkness comes. By using the gain available in darlington transistors, this circuit is simplified to
use just a photodarlington sensor, a darlington amplifier, and three resistors. The illumination level will
be slightly lower than normal, and longer bulb life c~m be expected, since the D40K saturation voltage
lowers the lamp operating voltage slightly.
In warning and marker light applications a flashing light of high brightness and short duty cycle is
often desired to provide maximum visibility and battery life. This necessitates using an output transistor
which can supply the cold filament surge current of the lamp while maintaining a low saturation voltage.
Oscillation period and flash duration are determined in the feedback loop, while the use of a
phototransistor sensor minimizes sensitivity variations.
107
+6VOC +6VDC
#4512 SPOTLIGHT 47K 470

OR 47
6.8K #1482 LAMP D43C2
2.2M #4512 SPOT

OR .
#1482 LAMP
FIGURE 6.5: PORTABLE AUTOMATIC NIGHT LIGHT. FIGURE 6.6: AUrOMATIC NIGHT FLASHING LIGHT
Another form of night light is line operated power outage lights, which provides emergency
lighting during a power outage. Thephototransistor should be positioned to maximize coupling of both
neon light and ambient light into the pellet, without allowing selfillumination from the 6V lamp .. Many
circuits orthis type also use line voltage to charge the battery.
6V
51K
120V
LINE NE2.
MONITOR
L 14R1
FIGURE 6.7: LINE OPERATED POWER OUTAGE LIGHT
6.1.5 Sun Tracker

In solar cell array applications and solar instrumentation, it is desired to monitor the approximate
position of the sun to allow 'efficient automatic alignment. The L 14G 1 lens can provide about 15 0 of
accuracy in a simple level sensing circuit, and a full hemisphere can be monitored with about 150
phototransistors.
+12VOC
~ I
-jet-.
IK o I
I I
oI
!I
1M Ll4GI
OUTPUT
6
fi\ "4GI
Electrical Mechanical
FIGURE 6.8: SUN TRACKING CIRCUIT
108.
The sun provides ~ 80 mW/cm2 to the Ll4GI when on the centerline. This will keep the output
down to.s 0.5Vfor 9s7.5°.
The sky provides "",0.5 mW/cm 2 to the Ll4GI and will keep the output greater than 10V when
viewed. White clouds viewed from above can lower this voltage to "'" 5V on some devices.
This circuit can directly drive TTL logic by using the 5V supply and changing the load resistor to
4300. Different bright objects can also be located with the same type of circuitry simply by adjusting the
resistor values to provide the desired sensitivity.
6.1.6 Flame Monitor

Monitoring a flame and direct switching of a 120V load is easily accomplished using the L 14G I for
"point sources" oflight. See Figure 6.9. For light sources which subtend over 10° of arc, the Ll4CI
120VAC
.047 51K 750K
LI4GI ~.
.-----f-----,c""" / LIGHT
LOAD
22 47K
FIGURE 6.9: FLAME OUT MONITOR SWITCH
*The A15Q may be replaced by 100pF shunting a DHD800.

Wire for minimum crosstalk, 120V to gate, using minimum lead lengths.
RA is selected from the following chart for light level threshold programming.
RA SELECTION GUIDE FOR ILLUMINATION

HOLD. OFF LIGHT LEVEL FOOT
~ 20 ~40 ~ 80 ~ 200 ~400
IN FOOTCANDLES CANDLE
R A , Incandescent Light N.A. 1500 270 68 33 ·Kn
RA , Flame Light 220 75 30 12 6.2 Kn
RA , Fluorescent Light N.A. N.A. 2200 180 68 Kn
should be used and the illumination levels raised by a factor of 5. This circuit provides zero voltage
switching to eliminate phase controlling.
6.1. 7 Brightness Controls

The illumination level of lighted displays should be lowered as the room ambient light drops to
avoid undesirable or unpleasant visual effects. This circuit provides a very low cost method of
controlling the light level. Circuit power is obtained from a relatively high source impedance
transformer or motor windings, normally used to drive the low voltage lamps used in these functions. It
should be noted that the bias resistors are optimized for the 20V, 30 0 source, and must be recalculated
109
RI
50
lOW R3
20K 30.
DT230F
D40K2 (4) 20V
LAMPS (2)
#755 OR 159· R2 R4
1.80 10K
5W
FIGURE 6.10: AMBIENT SENSITIVE DISPLAY ILLUMINATION
for other sources. The L14Rl is placed to receive the same ambient illumination as the display and
should be shielded from the light of the display lamps.
Another form of automatic brightness control maintains a lamp at a constant'brightness over a wide
range of supply voltages. This circuit utilizes the consistency of photo diod~ response to control the
phase angle of power line voltage applied to the lamp and can vary the power applied to the lamp
between that available and "'" 30 % of available. This provides a candlepower range from 100 % to less
than 10% of nominal lamp output. The 100p.H choke, resistor and capacitors form a RLC filter network
and is used to eliminate conducted RFI.
Many other light sensitive circuits are feasible with these versatile devices, and those included
here are chosen to illustrate a range of practical, cost-effective designs .
. lOOK
100 LAMP
2.2M
250K~--~--~--~H 47K 100~H
C203B
120
VRMS
DHD
806
IK
82
lOOK
*The triac is matched to the lamp per chart in Figure 6.3.
FIGURE 6.11: CONSTANT BRIGHTNESS CONTROL
110
6.2 DETECTING OBJECTS WITH LIGHT
This section is devoted to circuits that use a light source and a light sensor, or arrays of either or
both, to sense objects by affecting the light path between the source and detector. Normally, the light is
blocked or reflected by the object to be sensed, although modulation of the transmission medium is also
common.
6.2.1 Paper Sheet Discriminator for Printing and Copying Machines

A common problem with sheet paper conveying systems is the inadvertant transport of two sheets
of paper, instead of one, due to mutual adherence by vacuum or static charges. The simple circuit
depicted in Figure 6.12 outputs power to the drive motor when one or no sheets are being fed, but
interrupts motor power when two or more superimposed sheets pass through the optodetector slot. The
optodetector may be either an H21 B darlington interruptor module or an H23B matched emitter-detector
pair. The output from the optodarlington is coupled to a Schmitt trigger, comprising transistors Q, and
Q2 for noise immunity and minor paper opacity variation immunity. When the Schmitt is "on," gate
current is applied to the SC148D output device. The dc power supply for the detector and Schmitt is a
simple R-C diode half-wave configuration chosen for its low cost (fewer diodes, no transformers) and
minimum bulk. While such a supply is directly coupled to the power triac, this is precluded by current
drain considerations (50mA dc for the gate drive alone). Note that direct coupling of the Schmitt to the
output triacs is preferred as RFI is virtually eliminated with the quasi-DC gate drive.
To further reduce dc drain on the power supply, the LED drive current is separately derived from a
diode bridge and current limiting capacitor. In addition to minimum dissipation and zero loading on the
dc supply, this connection also has the merit of maximizing LED current at each zero voltage crossover
of the ac sinewave, thus guaranteeing that drive to the Schmitt is solid (at least with no or one sheet of
paper) as the triacs commutate off and back on again. The fact that the Schmitt switches twice each
cycle, in phase with the zero diode current points, is now an advantage since gate drain on the dc supply
is completely eliminated during these "off" periods. Because the "off" periods coincide with
maximum instantaneous ac supply voltage when the triac is always hard on (thanks .to the phase-shifted
LED current), the circuit is virtually immune to the load power factor variations associated with ac
motors.
0.1 OT230F
r---_--..-_-~-~-_--o+12VOC
.-_--.:SC 1480
2.7K 100
470 270 4.7K
1BV lmApC
Q2
330 033024
1.2K 12
10W
1.2K
lOW
I PCI r
I I I
OZ805 I :::::::::: I 100
(4) I
I 1_ _ _ -'
Rl ADJUSTS FOR PAPER
I I -=
I
OPACITY: MOTOR SHOULD I_~ ____ -
RUN WITH 1 SHEET OF PAPER,
STOP WITH 2 SHEETS OF PAPER. H21A1 FOR TRANSMISSIVE SENSING
PC-I AND R F501 AND L14G3 FOR REFLECTIVE
SENSING GFOE1A1 AND GF001A1
FOR FIBER OPTIC PROBE
FIGURE 6.12: PAPER SHEET DISCRIMINATOR WITH ZERO FIGURE 6.13: OPTICAL PICKUP TACHOMETER
VOLTAGE SWITCHING TRIAC MOTOR DRIVE
111 .
6.2.2 Optical Pick Up Tachometer
Remote, non-contact, measurement of the speed of rotating objects is the purpose of this simple
circuit. Linearity and .accuracy are extremely good and ·normally limited by the milliammeter used alld
the initial calibration. This circuit is configured to count the leading edge of light pulses and to ignore
normal ambient light levels. It is designed for portable operation since accuracy is not sensitive to
supply voltage within supply voltage tolerances. As illustrated in Figure 6.13, full scale at maximum
sensitivity of the calibration resistance is read at about 300 light pulses per second. A digital volt meter
may be used, on the 100 mVfull scale range, in place ofthe milliammeter, by shunting its input with a .
1000 resistor in parallel with a 10n
p,F capacitor. This R-C network replaces the filtering supplied by'
the analog meter.
6.2.3 Drop Detector

The self-biasing configuration is useful any time small changes in light level must be detected,
for example, when monitoring very low flow rates by counting drops of fluid. In this bias method,
the photodarlington is DC bias stabilized by feedback from the collector, compensating for
different photodarlington gains and light emitting diode outputs. The 10p,F capacitor integrates the
collector voltage feedback, and the 10M resistor provides a high base source impedance to
minimize effects on optical performance~ The detector drop causes a momentary decrease in light
reaching the chip, which causes collector voltage to momentarily rise, generating an output signal.
GROUND
¢161~
10K
.005
75
( OU~PUT
I I
220K
--'V-+
LED55C
--'V-+
220K LIGHT OAOP SENSOR
SOURCE PATH. CIRCUIT
-5V
Electrical Schematic Mechanical Schematic
FIGURE 6.14: LOW LIGHT LEVEL DROP DETECTOR
The initjallight bias is small due to output power constraints on the light emitting diode and mechanical
spacing system constraints. The change in light level is a fraction of this initial bias due to stray light
paths and drop translucence. The high sensitivity of the photodarlington allows acceptable output signal
levels when biased in this manner. This compares with unacceptable signal levels and bias point
stability when biased conventionally, I.e., base open and signal output across the collector bias resistor.
6.2.4 Paper Tape Reader

When computer peripheral equipment is interfaced, it is convenient to work with logic signal
levels. With a nominal 4V at the output dropping to -0.6V on illl,lmination, this circuit reflects the
requirements of a high-speed, paper tape optical reader system. The circuit operates at rates of up to
1000 bits per second. It will also operate at tape translucency such that 50 % of the incident light is
transmitted to the sensor, and provide a fixed threshold signal to the logic circuit, all at low cost. Several
circuit tricks are required. Photodarlington speed is enhanced by cascode constant voltage biasing. The
output threshold and.tape translucency requirements are provided for by sensing the output voltage and
providing negative feedback to adjust the cascode transistor bias point. Circuit tests confirmed
operating to 2000 bits per second at ambient light levels equal to signal levels .
112
+5V LOGIC SUPPLY
2K IK
lOOK OUTPUT
, IK
2N5172 D'HD806
240
.".
24K 1M IK --'\or-
--'\or- F5D1
-15VDC~-4--~--~~--~~~~+---------~
FIGURE 6.15: HIGH SPEED PAPER TAPE READER CIRCUIT
6.2.5 Motor Speed Control Circuits

These controls may be of the open loop type, where light just provides a no-contact, non-wearing
circuit input from a person or machine which monitors the output of the motor, or a closed loop type,
where the light monitors motor speed as a tachometer and maintains a fixed, selected, speed over a range
of load and line conditions.
Closed loop, tachometer feedback control systems utilizing the H21Al and a chopper disc,
provide superior speed regulation when the dynamic characteristics of the motor system and the
feedback system are matched to provide stability. The tachometer feedback systems illustrated in
Figure 6.16 were designed around specific motor/load combinations and may require modification to
prevent hunting or oscillation with other combinations. This dc motor con.trol utilizes the optachometer
circuit previously shown to control a P. U. T. pulse generator which drives the D44 E 1 darlington
transistor which powers the motor.
113
r---------~------------------------------------,
I I
I +12VOC' I
I I
I I
I I
I DHD805 .... J
: 10K 1M 220K .. ;'.... DC
I MOTOR
I
I 220K
I
I
1
I IK AI4F
8",
.002
LIGHT
CHOPPER
WHEEL
r- :l',ffi. :-- 20K
I
I
I
I
.=W:.
L ____ --J
22
1M
SPD.
OHD
805 D44EI
H23AIOR H2JAI ADJ. IK IK

L_
Tachometer Section Adjust & Error Sensing Pulse Generator Section
FIGURE 6.16: DC MOTOR. TACHOMETER FEEDBACK. PWM; SPEED CONTROL
The ac motor control in Figure 6.17 illustrates feedback speed regulation of a standard ac induction
motor, a function difficult to accomplish otherwise than with a costly, generator type, precision
tachometer. When the apertured disc attached to the motor shaft allows the light beam to croSs the
(4)IN5060 IN5060
RI
SPEED 10K
ADJUST
GAIN
VI
IK 10K 250K lOOK 22
SPEED 10K
o.lJ'F ADJUST
12V 1M
QI
II!V 2N6027
J'A74 I
+ CI
r- -, 0.047J'F
22J'F I I DH0806
I6V I I
I I r
I I
I I IK C2 lOOK
10K
( ""
L.
HIIAI
...J O.47J'F
'-
1/2 H11C4 (4)1N5060
FIGURE 6.17: CLOSED LOOP AC MOTOR SPEED CONTROL WITH OPTICAL TACHOMETER
114
interupter module, the programmable unijunction transistor, QI' discharges capacitor,C I, into the
much larger storage capacitor, C2. The voltage on C2 is a direct function of the rotational speed of the
motor. Subsequently, this speed-related potential is compared against an adjustable reference voltage,
VI> through the monolithic operational amplifier, AI' whose output, in tum, establishes a dc control
input to the second P. U .T. (Q2)' This latter device is synchronized to the ac supply frequency and
furnishes trigger pulses in conventional manner to the triac at a phase angle determined by the speed
control, R I, and by the actual speed of the motor.
6.2.6 Long Range Object Detector

When long ranges must be worked with IRED light sources, and when high system reliability is
required, pulsed mode operation of the IRED is required. Additional reliability of operation is attained
by synchronously detecting the photodetector current, as this circuit does. PC-I is an IRED and
phototransistor pair which detect the presence of an object blocking the transmission of light from the
4.5 TO 6.5VDC
22
-:::c- IOJ' F
H,
47K
470 2N5249
39K
D29E2 I LOAD
TO
5mA
1/2 HIIA5 300 0.05 2N5249
10
RI
1M 0.002
/ "-
( ---'V-+ -"\r-+ \
,
\ ---'V-+ 1.3K 22 ~
/
I 27K 2.2K
22
1/2 PC-I
-
PC-1 SELECTION TRANSMISSION RANGE REFLECTIVE RANGE
H23A1 5" 1"
LED56 and L 14Q1 12" 3"
LED56 and L 14G 1 18" 4~"
LED55C and L 14G1 32" 8"

1 N6266 and L 14G3 48" 12"
F5D1 and L 14G3 80" 20"
F5D1 and L 14P2 200" 50"
FIGURE 6. 18: LONG RANGE OBJECT DETECTOR
IRED to the phototransistor. Relatively long distance transmission is obtained by pulsing the IRED,
with about lOJLsec pulses, at a 2m sec period, to 350mA via the 2N6027 oscillator. The phototransistor
current is amplified by the 2N5249 and 2N5356 amplifier to further increase distance and allows use of
the HI1A5, also pulsed by the 2N6027, as a synchronous detector, providing a failsafe, noise immune
signal to the 2N5249 pair forming a Schmitt trigger output.
This design was built for battery operation, with long battery life a primary consideration. Note
that another stage of amplification driving the IRED can boost the range by 5 to lO times, limited by the
IRED Vp, and a higher supply voltage for the IRED can double this.
115
6.3 Transmitting Information With Light
, Transmission of electronic information over a light beam is the major use of optoelectronics today.
These applications range from the use of optocouplers transmitting .information between Ie logic
circuits and power circuits , between power lines and signal circuits, between telephone lines and control
circuitry, to the pulse modulated systems which transmit information through air or fiber optics over
relatively great distances. '
6.3.1 Analog Information

The circuits illustrated here are designed to transmit analog, i.e., linear signals, optoelectroni-,
cally. In this section the trade-offs between communication distance, fidelity, noise immunity and other
design constraints are illustrated by example in an attempt to provide an understanding of this
technology. Simple voice transmission systems can be made using infrared light through air as the signal
path. Power dissipation in the IRED limits the ultimate capability of this type of system for distance and
modulation frequency, due to the trade-off of power dissipation, pulse width and pulse frequency. In
applications where transmission of information without electromagnetic interference is imperative, a
relatively low cost system can be built around an IRED, a phototransistor, and low cost glass fiber
optics, which can provide transmission over distances greater than lkm, or at rates over 100KHz using
low cost driving circuitry. Higher frequency systems for long distance, operation require pulse
generators capable of generating short «200nsec), high current pulses with leading edge overshoot,
adding considerably to system expense, and heat sinking of the IRED. Laser diode systems provide
higher performance at higher cost, and telecommunications fiber optic transmission systems provide an
example of the practical limits of this technology. Using the low cost G.E. IRED's and detectors,
frequency modulation and pulse data transmission are compatible with moderate frequency systems ..
The General Electric GaAIAs and GaAs IREDs are very efficient and, have excellent stability due to the
liquid epitaxial processing, which also defines its switching parameters and speed of response. This
response time varies from about 100 to 500nsec, depending on bias level, and indicates that, for a given
IRED power dissipation, and frequency of operation, there is an optimum input pulse width which will
maximize pulse poweroutput and, thereby, range of transmission. For the system illustrated in the next
116
application, this was determined to be about 500nsec, although power output was within 10% of the
maximized value for widths from 170nsec to over Ip.sec. This was determined by monitoring the power
output with a photo cell connected phototransistor (the photo response with a low value load resistor is
about an order of magnitude faster than the IRED) as the pulse width to the IRED is changed,
maintaining other system parameters constant. Peak power input for the desired maximum power
dissipation can be calculated for each pulse width and multiplied by the normalized peak power out and
efficiency, at that pulse width and input power, respectively, to obtain a set of values of peak available
power out, as a function of pulse width, at the frequency, waveshape and average power dissipation
desired. Plotting the set of values produced the curve shown in Figure 6.19, which allowed analytical
system optimization. It should be noted that peak light output occurred 50 to 100nsec after peak input
mW
50 .-
l-
=>
0..
I-
=> 40
0 I
I
I-
J:
<.!) 30
:::i
:10:
'"
IIJ
0..
20
10
0.2 0.4 0.6 0.8 1.0 ~SEC

PULSE WIDTH
FIGURE 6.19: PEAK LIGHT OUTPUT EXPECTED FOR PAVE = .25W. f = 80KHz OPERATION
current was reached, and the IRED continued to emit light for Ip.sec after the input current pulse had
decreased to negligible levels, which places a peak repetition rate and peak envelope power
optimization constraint on designs over 500KHz. To minimize tum on and tum off times of these
IRED's, about 1I2nC of charge, per rnA forward current, must be injected at tum on and removed at tum
off. This, and the compatibility of the beam with focusing systems, is why most high frequency systems
are designed around the expensive, relatively short lived, GaAs laser diode.
A relatively "siniple FM (PRM) optical transmitter was designed" around a programmable
unijunction transistor (PUT) pulse generator using this information. The basic circuit can be operated at
80KHz and is limited by the PUT -capacitor combination, as higher frequency demands smaller
capacitance, which provides less peak output. As illustrated, 60KHz is the maximum modulation
frequency. Pulse repetition rate is relatively insensitive to temperature and power supply voltage and is
a linear function of VIN , the modulating voltage. Tested with the receiver illustrated below, useful
information transfer was obtained in free air ranges of 12 feet ("" 4m). Lenses or reflectors at the
light emitter and detector increases range and minimizes stray light noise effects. Greater range can also
be obtained by using a higher power output IRED such as the F5Dl in combination with the L14P2
phototransistor . Average power consumption of the transmitter circuit is less than 3 watts,.
117
22K
470
20K
LED56
2.4K
~
+"'\.r- 2N5172
10
~---+----~~~--~----~----o-25VDC
FIGURE 6.20: 50KHz CENTER FREQUENCY FM OPTICAL TRANSMITTER
For maximum range, the receiver must be designed in the same manner as a radio receiver front
end, since the received signals will be similar in both frequency component and in amplitude of the
photodiode current. The major constraint on the receiver performance is signal to noise ratio, followed
by e.m. shielding, stability, bias points, parts layout, etc. These become significant details in the final
design. This receiver circuit consists of a L14G2 detector, two stages of gain,and a FM demodulator
(which is the tachometer circuit, previously illustrated, modified to operate up to 100KHz). Note that
15K
4.7K 10K IK o.l-=- VOUT -4mV/KHz
.002
Ll4G2 22M lOOK

470K 47K
390pF
100pF
2N5249
4.7K
~-T-+----~--~--------~----~--------~----~--~--~-28VDC
PHOTODETECTOR AMPLIFIER DEMODULATOR
FIGURE 6.21: RECEIVER FOR 50KHz FM OPTICAL TRANSMITTER
better sensitivity can be obtained using more stages of stabilized gain with AGe, which lower cost and.
sensitivity may be obtained by using an H23Al emitter-detector pair and/or by eliminating amplifier
stages. For some applications, additional filtering of the output voltage may be desired.
Fiber optics are extensively used for information transfer, especially at high frequency for wide
band width. Often there is a requirement for a low frequency, low cost information transmission link
. where the isolation, noise immunity and safety features of fiber optics are advantageous. The GFOD/E
series makes such links possible.
Many information transfer systems require a two-way flow of information. Although a full duplex
system can be implemented in fiber optics, it normally requires two fiber transmitter-receiver sets.
Many system needs can be fulfilled by a half-duplex system, in which information can flow in both
directions, but only one direction at any given time. The conventional method of building a half-duplex
link requires a separate emitter and detector, connected with directional couplers, at each end of the
fiber. The GFOEIA series of infrared emitting diode.s are highly efficient, long lived emitters, which
are also sensitive to the 940nm infrared they produce. Biased as a photodiode they exhibit a sensitivity
of about 30nA per uW irradiation at 940nm. In a suitable bias and switching logic network they form the
basis of a half-duplex information link. A half-duplex link illustrating emitter-detector operation of the
GFOEIAI is shown in Figure 6.22. This schematic represents a full, general purpose system,
118
including: approximately 50db compliance range with 1V RMS output; passive receive. transmit
priority (voice-activated) switching logic; 100Hz to 50kHz frequency response; and does not require
exotic (expensive) components or hardware. The system is simple, inexpensive, and can be upgraded to
provide more capability through use of higher gain band-width amplifier stages. Conversely,
perfonnance and cost may be lowered simply by removing undesired features.
TRANSMIT _~_ _---,

SWITCH r-
'---~--'-'--4~-'--;---4~+---O+sv
27
(A) TRANSMITTER PORTION

TRANSMITTEO(-
10~VI.:el000.y SIGNAL \
INPUT -- 510K
100 4.7K
Ji----"AIS",K---' \ (B) vox CONTROL LOGIC
4.7K \
I
J
35JL I
2.2K 5V . /
/
/
/
,/
RECEIVE / / -
---- -- _/
+SV
SWITCH/
124FO~K______~______~~______~~~__~~______~~
~
GFOE
tAt RECEiVED
SIGNAL
EMITTER OUTPUT
DETECTOR
DZBOO
At, A2::·CA3Q31 (2)
WITH SUPPLY BYPASS
(C) RECEIVER PORTION
AND STABILIZATION
CAPACITORS AS REQUIRED.
FIGURE 6.22: HALF DUPLEX INFORMATION LiNK
119
Circuit operation is easily understood by following the signal through the three portions of the
circuit. Both AGC (automatic gain control) circuits utilize the HIIF bilateral analog FET optoisolator~s
variable resistance characteristic to attenuate the signal or modify the feedbackpath to provide AGC. In
these circuits the peak value of the output signal is compared to the VBE(on) of a transistor-signal peaks
which exceed VBE(on) tum the transistor on. Collector current of the transistor is capacitively filtered and
supplies current to the IRED of the HI IF . This lowers the resistance ofthe analog FET detector, which
controls the signal level. In the transmitter, the signal enters via a 47K-HIIF AGC attenuator network
and passes through two stages of bipolar transistor amplification. The GFOEIAI bias current from the
output of the transistor is about 50mA dc modulated by approximately 80mA peak-to-peak ac for input
signals within the compliance of the AGC network (about lOmV RMS to over 2V RMS). IRED bias is
normally off until an input signal to the transmitter reaches AGC levels through the vqx control logic
which clamps the transmitter output transistor off. The AGC signal level provides pulses of current to
the VOX logic which are amplified, filtered and turns off both the clamp on the output transistor.
(activating the transmitter) and the switch that allows GFOEIAI photodiode current to flow into the
receiver (disabling the receiver). The receiver consists of the VOX controlled HllF bilateral analog
FET switch, a trans impedance amplifier stage with AGC control of the gain and a voltage amplifier with
a fixed gain of 30db. Note the forward dc bias on the GFOEIA provided by the transimpedance
amplifier must be below Vp, yet provide ac signal swings. This receiver gives a reasonable compromise
between gain-bandwidth and complexity. It requires 22 components (including op-amp and capacitors)
to provide 2.5V p-p output signal for infrared outputs ranging from about IJ-tW to over 200J-tW.
Linear AC Analog Coupler All methods of transmitting D,C. analog information via optical
isolation have challenging limitations. Analog A.C. signal isolation with high linearity is much easier.
Although I.C. output couplers are advertised for this function, a very simple bias circuit allows the
PARAMETER I.C. SPECIFICATION 4N35 DATA UNITS

.-_-<>5V
470K Supply Current 2 ~Is ~ 10 1 ~ Is ~ 3 rnA

Gain ;;;'100 ;;;'200 rnV/rnA
Voltage Swing 4 5 Volts
Distortion 5 0.3 %
Step Response 1.4 6 J.lsec
Bandwidth ;;;'100 120 KHz
D.C. Output 0.2~Vo~6 I ~Vo ~6 Volts
FIGURE 6.23: LINEAR A.C. COUPLER PERFORI\IIANCE COMPARISON: I.C. COUPLER TO 4N35
4N35 transistor output optocoupler to better the I.C. performance at much lower cost. The circuit is
illustrated in Figure 6.23. Operation is as follows: with the coupler biased in the linear region by the
lOrnA dc bias on the IRED and the voltage divider on the phototransistor base, photodiode current flows
outof the base into the voltage divider, producing an ac voltage proportional to the ac current in the
IRED. The transistor is biased as an emitter follower and requires less than 10% of the photodiode
current to produce the low impedance ac output across the emitter resistor. Note that the HilA VI may
be substituted for the 4N35. to provide VDE line voltage rated isolation of less than O.5pF.
Linear PRM Analog Coupler -A minimum parts count version of this system also provides
isolated, linear signal transfer useful at shorter distances or with an optocoupler for linear information
transfer. Although the output is low level and cannot be loaded significantly without harming accura9Y,
a single I. C. operational or instrumentation amplifier can supply both the linear gain and buffering for
use with a variety
, of loads.
120
+12V +12V
270 47K 10K DHD806

0.01
47K
-10M
1.8K
2N4987
100
1M 0.1
VIN ---"\..r+
~ 22
-20S VIN S20

-
Transmitter Receiver
FIGURE 6.24: MINIMUM PARTS COUNT LINEAR PRM ISOLATION CIRCUIT
DCLinear Coupler -The accuracy of direct linear coupling of analog current signals via an
optocoupler is detennined by the coupler linearity and its temperature coefficient. Use of an additional
coupler for feedback can provide linearity only if the two couplers are perfectly matched and identically
biased. These are not practical constraints in most equipment designs and indicate -the need for a
different design approach. One of the most successful solutions to this problem can be illustrated by
using a H23 emitter-detector pair and a L14H4, as illustrated in Figure 6.25. The H23 detector and
L14H are placed so both are illuminated by the H23 IRED emitter. Ideally, the circuit is mechanically
designed such that the H23 emitter may be positioned to provide VOUT = 2.8V when VIN = 0, thereby
+5V 112 +5V

H23AI*
DAI703
~
~
lOOK
"iN
2N5249A IK VOUT 11112.8+0.3VIN
(-5SVIN S51 ~
~
---"\..r+ ---"\..r+
Input Output
FIGURE 6.25: LINEAR OPTICAL COUPLER CIRCUIT
·Closely positioned to-Wuminate L 14Q1 and H23A1 Detector. such that VOUT ~ 2.SV at V,N = O.
insuring collector current matching in the detectors. Then all three devices are locked in position
relative to each other. Otherwise, R may be adjusted to provide the proper null level, although
temperature tracking should prove worse when R is adjusted. Note that the input bias is dependent on
power supply voltage, although the output is relatively independent of supply variations. Testing
indicated linearity was better than could be resolved, due to alignment motion caused by using plastic
tape to lock positions. The concept of feedback control of IRED power output is useful for both
infonnation transmission and sensing circuitry. .
121
6.3.2 Digital Information
The circuits ill1l;strated here are used to transmit information in the form of swi~ch states, i.e., on
and off (or'zero and one states). Most of these circuits are designed to interface· with commercial
integrated circuit logic by receiving and/or providing signal for the logic circuit. Due to switching
speeds of both emitters and detectors, nooptocoupler can provide true speed compatabilitywith only the
slowest logic families. For this reason, the logic compatibility of these circuits is level compatibility at
worst case conditions, i.e., zeros and ones will meet the I.C. specified levels over the ranges of
. conditions specified.
TTL - This is the most common logic family, has the most functions available, and is the basis
for the IEEE digital interface standard for programmable instruments. There is also a wide variety of
standard types of TTL (i.e. high speed, Schottky, LSI, etc.) eaq-p ofw,hich has different logic level or
logic level conditions (primarily source and sink currents) each of which can place different
requirements on an optocoupler required to interface with it. To simplify some problems of interfacing
TTL logic with optocouplers, GE surveyed the specifications of SSI devices (single function devices,
i.e., "or" gates, flip-flops, etc.) and has specified a series ofphoto transistor and photoSCR couplers to
be level compatible with the common 7400, 74HOO and 74S00 series TTL over the range of gate
parameters, power supply and temperature variations specified. These couplers are designated the H74
series and, are very cost effective. They are specified with specific values of 5 % tolerance bias resistors
in a defined configuration .. This eliminates any chance of misapplication or circuit malfunction. The·
circuits and logic truth table in Figures 6.26 and 6.27 illustrate application of this series of couplers.
Noise margin considerations are minimized with these couplers since the slow switching speeds of the
optocoupler do not allow reaction to the high speed hash that is provided for by noise margins.
VCC
TEST CONDITIONS LIMITS
-
PARAMETER . Vee lIN ISINK Min. Max. Units
Min. Max. Min. Max. Min. Max.
VOUT (1) 4.SV -O.4mA 2.4 Volts l IN
VOUT (0) 4.SV 12.0rnA 0.4 Volts

VIN (1) S.SV 1.0rnA 2.0 Volts
VIN (0) S.SV -1.6rnA 0.8 Volts
FIGURE 6.26: CHARACTERISTICS REQUIRED OF TTL GATES WHICH ARE TO BE INTERFACED BY H74 SERIES
VCCI
VDC =5 ± .5V 390±5%
390±5% 2.4K±5%
- - _ .... __ RECIEVING
VAc =50 .--"--........-jGATE SEE
"\ TO
400V
~ ,
I
TABlE
J PEAK
....1"\,,+
./
/ 0.1
TRANSMITl'ING
LOGIC GATE GATE
SEE TABLE SEE TABLE
56K£l NC
LOGIC TO POWER COUPLING H74 BIAS CIRCUIT LOGIC TO LOGIC COUPLERS H74A1 BIAS CIRCUIT
FIGURE 6.27: H74 SERIES TTL LOGIC COUPLING
For higher speed applications, up to ImHz NRZ, the Schmitt trigger output HIlL series
optoisolatorprovides many other attractive features. The 1.6mA drive current allows fan-in circuitry to
drive the IRED, while the 5Volt, 2700 sink capability and 100nsec transition times of the output add to
the logic coupling flexibility.
122
Low power TTL, low power Schottky clamped TTL, MSI TTL and SI TTL circuits will not
generally provide the current sinking capability indicated in the H74 bias chart. The H74 series
optocoupler can still provide the means of using a general purpose circuit that will interface with all
these types and between all the types. A simple stage of transistor amplification as an output buffer
allows the low current sink capability (down to IOOp.A) to drive the IRED. The logic sense is not
changed. Logic zero out provides current to the IRED which activates the output of the optocoupler.
+5V
DRIVING I - -........""""""-H D41K1

GATE
FIGURE 6.28: IRED DRIVE FROM LOW POWER. MSI AND LSI TTL
High threshold versions of TTL (HNIL, etc.) can normally be used without buffering by increasing the
bias resistor values to keep worst case currents within the TTL range at the higher supply voltages used
with these logic circuits.
CMOS - Like all low power (bipolar and MOS) logic, CMOS inputs are easily driven by
optocoupler outputs. Although some couplers are advertised by CMOS output compatible, careful
examination reveals the CMOS gate must be capable of sinking/sourcing several hundred microamps to
drive the light source. As standard CMOS logic operates down to 3V supply voltages and is specified as
low as 30p.A maximum current sinking/sourcing capability, it is again necessary to use a buffer
transistor to provide the required current to the IRED if CMOS is to drive the optocoupler. As in the case
of the low output TTL families, the H74Aoutput can drive a multiplicity of CMOS gate inputs or a
standard TTL input given the proper bias of the IRED. The optocoupler driving circuit is illustrated in
Figure 6.29. When the HIILI is used, a lower gain transistor such as the 2N4256 can be used with a IK
ohm resistor.
+~--~------------~
LOGIC
POWER 150
SUPPLY 5%
DRIVING
GATE
FIGURE 6.29: GENERAL PURPOSE CMOS IRED BIAS CIRCUIT
123
Note the logic sense is changed, i.e., a one logic state drives the IRED on. This circuit will provide
worst case drive criteria to the IRED for logic supply voltages from 3V to lOY, although lower power
dissipation can be obtained by using higher value resistors for high supply voltages. If this is desired,
remember the worst case drive must be supplied to the IRED with minimum supply voltage, minimum
temperature and maximum resistor tolerances, gate saturation resistance and transistor saturation
voltages applied. For the H74 devices, minimum IRED current at worst case conditions (zero logic state
output of the driving gate) is 6.5mA, while the HIILI is 1.6mA.
PMOS and NMOS - These logic families have current source and sink capabilities similar to the
previously mentione~ CMOS worst case. Normal logic supply voltages range from 6V to 30V at these
drive levels and bias circuitry design must account for this. NMOS provides higher current sinking than
sourcing capability, while PMOS is normally the opposite. As these logic families are found in a wide
variety of custom and standard configurations (from calculators to micro computers to music"
synthesizers, etc.), a generalized optocoupler bias circuit is impossible to define. The form of the circuit
will be similar to the low output TTL circuit for NMOS and similar to the CMOS circuit for PMOS.
Bias resistor constraints are as previously mentioned.
6.3.3 Telecommunications Circuits

The largest information transmitting system is the United States telephone system, many functions
of which could benefit from application of optocouplers. This section will document a few of these
applications, although it should .be noted that very detailed knowledge of the particular telephone
system and its interaction with the optocoupler circuit is required to ensure proper circuit operation and
prevent damage to the phone system.
Ring Detectors - These circuits are designed to detect the 20Hz, = 86V rms ring signal on
telephone lines and initiate action in an electrically isolated circuit. Typical applications would include
automatic answering equipment, interconnect/interface and key systems. The circuits illustrated in
Figure 6.30-6.32 are "bare bones" circuits designed to illustrate concepts. They may not eliminate the
HIIAAI
86VRMS
~-T-----o - AlimA
20Hz
270
3.6K 10M
FIGURE 6.30: SIMPLE RING DETECTOR CIRCUIT
ac/dc ring differentiation, 60Hz noise rejection, dial tap rejection and other effects that must be
considered in field application. The first ring detector is the simplest and provides about a ImA signal
for a 7mA line loading for 1/1 Osec after the start of the ring signal. The time delay capacitor provides a
degree of dial tap and click suppression, as well as filtering out the zero crossing of the 20Hz wave.
This circuit provides the basis for a simple example, a ring extender that operates lamps and
buzzers from the l20V, 60Hz power line while maintaining positive isolation between the. telephone
. 124
line and the power line. Use of the isolated tab triac simplifies heat sinking by removing the constraint of
isolating the triac heat sink from the chassis.
0.68
~ HIIAAI
'" \ 2.2K
TELEPHONE
LINES 47
SCI42B
120VAC
POWER
LINE
3.6K
0.1
Maximum Load: 500 W Lamp or 800 W Inductive or Resistive

FIGURE 6.31: REMOTE RING EXTENDER SWITCH
0.1
~~~~~----~
HIIBX522
TELEPHONE / - --- - -/--'~---o __ I mA
LINE I ~
40VRMS
20Hz
\ , ~
75K 22M
FIGURE 6.32: LOW LINE LOADiNG RING DETECTOR
Lower line current loading is required in many ring detector applications. This can be provided by
using the HI 1BX522 photodarlington optocoupler, which is specified to provide a hnA output from a
O.5mA input through the -25°C to· + 50°C temperature range. The following circuit allows ring
detection down to a 40V RMS ring signal while providing 60Hz rejection to about 20V RMS. Zero
crossing filtering may be accomplished either at the input bridge rectifier or at the output, similar to the
method employed with the HllAAl illustrated earlier. Dependable ring detection demands that the
125
TELEPHONE
LIlliE
10K
O.IJlF 6 +VCC
DT230H
(4 PL.)
(COMMONJ
FIGURE 6.33: RING DETECTOR USING H11 L 1
circuit respond only to ring signals, rejecting spurious noise of similar amplitude, such as dialing
transients. The configuration shown in Figure 6.33 relies on the fact that ring signals are composed of
continuous frequency bursts, whereas dialing transients are much lower in repetition rate. The DC
bridge-filter combination at the H 11 L input has a time constant such that it cannot react to widely spaced
dialing transients, but will detect the presence of relatively long duration bursts, causing the HllL to
activate the downstream interconnect circuits at a precisely defined threshold.
Line Current Detection - Detection ofline current flow and indicating the flow to an electrically
remote1>0int is required in line status monitoring at a variety of points in the telephone system and
auxiliary systems. The line should be minimally unbalanced or loaded by the monitor circuit, and
relatively high levels of 60Hz induced voltages must be ignored. The HllAAl allows line currents of
either polarity to be sensed without discrimination and will ignore noise up to approximately 2.SmA.
126
470 LINE CURRENT
-
10mA
I
I
11 : HIIAAI
I ~~ :
IOMrtl\)
U-t t
O.5mA
FIGURE 6.34: POLARITY INSENSITIVE LINE CURRENT DETECTOR
In applications where greater noise immunity or a polarity sensitive line current detection is
required, the HIIAlO threshold coupler may be used. This phototransistor coupler is specified to
provide a minimum 10% current transfer ratio at a qefined input current while having less than 50p.A
leakage at half that input current - over the full-55°C to + 100°C temperature range. The input current
range at which the coupler is "on" is programmable by a single resistor from 5mA to lOmA. Figure
6.35 illustrates a line current detector which indicates the polarity of line currents over lOmA while
--..
I / ... "\
150:1:5%
-
LINE CUR RENT
I .. I
I I .... -,
HIIAIO: I
I / ....
I .... \
I I
I I
I I
I
I IHIIAIO
/ I
I
I
I
2.7M 2.7M I
t i'!lmA
FOR POSITIVE
ti'!lmA
FOR NEGATIVE
LINE CURRENT LINE CURRENT
OVER 10mA OVER 10mA
FIC;URE 6.35: POLARITY INDICATING LINE CURRENT DETECTOR
ignoring line currents of less than 5mA. This circuit will maintain these margins over a -55°C to
+ 100°C temperature range. At slightly more cost, the HIILI may be used in this circuit to provide
tighter threshold limits, hysterisis and digital output.
Indicator Lamp Driver - A simple "solid state relay" circuit provides a simple method of
driving the lOY ac telephone indicator lamps from logic circuitry while maintaining complete isolation
between the lOY line and the logic circuit.
127
DT230F
390 270
+ o-.JtNlr--....,
HIIBI S3A
/
3VMIN ( ~
LOGIC I ~ 10VRMS
SIGNAL \
, :SC140B
100
20V
FIGURE 6.36: ISOLATED. LOGIC CONTROLLED. INDICATOR LAMP SWITCH
Dial Pulse Indicator - A dial pulse indicatQrsenses the switching on and off of the 48Vdc line
voltage and transmits the pulses to logic circuitry. A HllAIO threshold coupler, with capacitor
filtering, gives a simple circuit which can provide dial pulse indication yet reject high levels of induced
60Hz noise. The DHD805 provides reverse bias protection for the LED during transient over-voltage
situations. The capacitive filtering removes less than 10msec ofthe leading edge of a 40V dial pulse,
while providing rejection of up to 25V RMS at 60 Hz.
TELE PHONE
L 11'£
3.31<
25,.F:;:: ::;: 150

DHD
805
~~
,-
(\ "
,~
---------,
tillAIO
~_>r----<>
-
OUTPUT
1!:lmA
DIAL
. PULSE
2.7M
FIGURE 6.37: DIAL PULSE INDICATOR
Digital Data Line Receiver - When digital data is transmitted over long lines (~ I meter) proper
transfer is often disturbed by the parasitic effects of ground level shifts and ground loops, as well as by
extraneous noise picked up along the way. An optocoupler such as the HIlL, combining galvanic
isolation to minimize ground loop currents and their concomitant common mode voltages, with
predictable switching levels to enhance noise' immunity ,can significantly reduce erratic behavior. In
Figure (3), resistor Rs is programmed for the desired switching threshold, Cs is an (optional) speed-up
capacitor, and CR I is an LED used as a simple diode to provide perfect line balance and a discharge path
for Cs if the speed-up capacitor is used~
CRI
LINE ~ J+--.o
4 'VOUT
F5F1
o-----------------------~~--_o2
5 COMMON
FIGURE 6.38: DIGITAL DATA LINE RECEIVER
128
6.4 OPTOISOLATOR SWITCHING CIRCUITS
The bilateral analog FET optocoupler can also be utilized as an isolated control analog switch, and
will be illustrated in the next few examples. A series-parallel combination of the optocouplers can be
utilized as an analog commutator. A FET high input impedance op-amp connected as a unity-gain
follower is normally used as a buffer between the signal source and the load. The switch circuit can be
viewed as part of a combination of two series-connected variable resistors in parallel with the input
signal source. The input to the op-amp forms an equivalent voltage-divider network. If Ron = 3KO and
Roff = 300MO, the variation of the voltage dividing ratio is from 0.00001 to 0.99999 which implies the
error due to the opto-bilateral switches is about 0.001 %. Because the switching speed of the optocoupler
bilateral switch (0% and 100% signal levels) is less than 50p.sec, this analog commutator works
accurately for repetition rates below 20KHz. For a 200mV dc input signal, the analog commutator has a
rise time (0% to 99%) of about 5p.sec and a fall time (99% to 0%) of about 4p.sec. The rise time
(acquisition time, TA) and fall time (recovery time, TJ of the commutator with a source impedance of
3MO is also a function of input voltage. For a specific input voltage, the inverse of (TA + TJ will
determine the upper limit of the operating frequency range of the commutator, and approaches 50KHz at
high input voltages. This technique allows a four-channel analog multiplexer to be constructed by
adding three more input and control channels.
+5V
HIIFI
VOUT
180n.
1801l
I....--L-'- ' - '- ' - '- ' - '- ' - '- ' - -•• VOLT
INPUT VOLTAGE !5
HIIFI (b) Switching Time.
!5OOmV
COMMUTATION
CONTROL
....- .....I.lllru',.----..,U\,"UIWIH output
t (a) Schematic.
control
2V 200)'S
FIGURE 6.39: ANALOG COMMUTATOR CIRCUIT
The multiplexer allows selection of any of the four signal sources via the address selection and
enable pulse. Switching transients have been observed during the transition of the control signal. These
transients (about 500nsec) are much shorter than the acquisition time and recovery time (several
micro-seconds), and do not affect the operation of the multiplexer. To illustrate the operation of the
mUltiplexer, four different waveforms are fed into four input channels, then sequentially multiplexed.
Different dc offset voltages are applied to each channel so that the signal associated with each channel
can be clearly identified in the output waveform, as illustrated. The cross-talk between adjacent
channels at various frequencies has been analyzed, and degrades about 20db per decade as frequency
increases. With a 100kHz input signal, the adjacent channel rejection is about 62db, increasing to 100
db at 1kHz. This figure can be further reduced with careful circuit layout.
129
+5V
IV
180ll
VOUT
e
c.J
W
;;l
en
v, (oJ.--..:;
II>
II>
'w
lOOpS a:
Q
Q
Output Waveforms for

'"
Sequential Address.
, .Il
COM, (5V)
ENABLE PULSE Schematic.
FIGURE 6.40: FOUR CHANNEL MULTIPLEXER
Optically coupled isolators can replace transformers in a zero-voltage detector for synchronizing
the firing of a thyristor in three-phase control applications. The optoisolators eliminate the need for a
low-pass filter, required in standard detectors for eliminating spurious zero-crossings caused by the
thyristor's switching transients. They provide high-voltage isolation and much lower capacitive
coupling t? the circuit than a standard transformer, approximating the coupling of double-shielded
, types.
The IRED's in the HllAAl optoisolator are inserted in each of three legs of a delta network.
During most of the cycle, all phototransistors are on. At times when the voltage between any two
lines is within about 15V of zero, however, no current will flow through the IRED's connected across
those lines. Therefore its corresponding phototransistor will be off, causing pin 2 of the 74LS221
one-shot to change states and a phase-identification pulse (P) to be generated twice every cycle.
IIIC,BIIIA
5V
IOKJ'l.
Z 360Hz ZERO
_ VOLTAGE
Z PULSES
P PHASE
j5 IDENTIFICATION
12OV/208V
60Hz OPTOISOLATORS: HIIAAI
FIGURE 6.41: THREE PHASE LINE SYNCHRONIZER
In the case illustrated, the phototransistors are wired so that a pulse will be generated at the output
each time the input voltage, as measured across cf>a and cf>b, passes through zero. Note that the one-shot
should be adjusted so that the trailing edge of the output pulse corresponds to the actual,zero-crossing
point.
130
Identification pulses are also generated for all three phases collectively and these can be accessed,
•
if required, at the zero-voltage pulse output (Z). These pulses occur three times as often as P.
Because at least one IRED is conducting at anyone time, no transient will normally be generated,
so no low-pass filter is.needed. Furthermore, the phototransistor's response of a few microseconds acts
to suppress any transients that might occur near the zero-voltage points, thereby increasing the circuit's
noise immunity.!
6.5 POWER CONTROL CIRCUITS

The evolution of the optoelectronic coupler has made it practical to design a completely solid state
relay. A solid state relay can perform not only the same functions as the original electro-mechanical
relay, but can also provide solid state reliability, zero voltage switching and, most importantly, a direct
interface between integrated circuit logic and power line.
6.5.1 AC Solid State Relays

A zero voltage switching design for ac solid state relays meets all the above criteria and is a
combination of four individual functions. It consists first of an input circuit. The input terminals of this
part of the relay are analogous to the coil of an EMR (electromechanical relay). It is effectively a
resistive network and can be designed to accept a large range of input values. Circuits are designed to
accept either digital or analog signals and to limit input current requirements to enable direct interfacing
to logic circuits. The second part of a solid state relay consists of an isolation function performed by an
optocoupler. A coupler provides, by means of a dielectric medium, an isolation path to transfer the input
signal information to a third function; which is the zero voltage switching network. The ZVS network
monitors the line voltage and controls the fourth (power) function, selecting the "on" or "off" state.
ISOLATION
+~<
ZERO
INPUT INPUT VOLTAGE POWER OUT PUT
TERM INALS OUTPUT TERM INALS
SWITCH
~----
.. "COIL" ----""'+---------"CONTACTS II -------eoI°1
FIGURE 6.42: SOLID STATE RELAY BLOCK DIAGRAM
A reliable solid state relay design incorporates the correct choice of components and a careful
consideration of the system'to be interfaced. There are a variety of circuit configurations that are
possible, each with its own advantages and disadvantages.
Input (Coil) Circuits - The first design consideration is the relay input (or coil) characteristics. It
can be a simple current limiting resistor (== 330n for TTL) in series with a light emitting diode, or it can
be as complex as a Schmitt trigger circuit exhibiting hysteresis characteristics.
The input circuit should be designed around the available input signal. When working with logic
signals" consider the complete capabilities of the gate output. A logic gate can operate in both the
sinking or sourcing mode. Some MOS (or CMOS) circuits supply only about 20JLa, while TTL gates can
offer up to SOma in the sink mode and -1. 6ma in the source mode. These are the input currents available
to drive the solid state relay. In most circuits, the relays IRED will require O.SmA to 20 rnA of drive
current at a 'minimum voltage of I.SV (the drop across the diode) in order to achieve workable output
currents in the detector device. The low level MOS logic signals normally indicate the need to use
transistor buffer (or signal amplification) stages in the input circuit.
131
CMOS q PMOS OPEN COLLECTOR
TTL OR OTL
Vee
FIGURE 6.43: CONNECTION OF TRANSISTOR BUFFERS TO LOGIC CIRCUITS
Generally, direct TTL connection to the optocoupler using SSI gates of the 54174, 54H174H and
54S174S logic families, which guarantee Vo (O) (maximum) ofO.4V sinking ;::= 12mA, is made with the
IRED "on" for a logic zero. For CMOS circuits th~ logic" 1" output is the best means of operation,
using an NPN transistor buffer. The buffer circuit in Figure 6.44 illustrates the advantage of the low
saturation voltage, high gain, GE transistor D38S.
+5V +5 TO 20V
330 330
OPTO OPTO
COUPLER COUPLER
.-
I
I ~ ~
\ , ~ ~
TTL CMOS
GATE GATE
2N5249
FIGURE 6.44a: DIRECT CONNECTION. FIGURE 6.44b: NPN BUFFERED CMOS

OF TTL 10 ~ 7mA CONNECTION 10 ~ 7mA
In the case where analog signals are being used as the logic control, hysteresis, via a Schmitt
trigger input, similar to the one in Figure 6.45, can be used to prevent "chatter" or half wave, power
output. Circuit operation is as follows: at low input voltages Ql is biased in the off state. Q2 conducts and
biases Q3and, thereby, the IRED off. When the base ofQJ reaches the biasing voltage ofO.6V-plus the
drop acrossRo , Ql turns.oJl. Q3 is then supplied base drive, and the solid state relay input will be
activated. The combination of Q3 and Q4 acts as a constant current source to the IRED. In order to
tum-off Q3 base drive must be reduced to pull it out of saturation. Because Q2 is in the off-state as sig-
nal is reduced, Ql will now stay "on" to a base bias voltage lower by the change in the drop across Ro.
With these values, highest tum-off voltage is t.OV, while tum "on" will be at less tQan 4.1V supplied
to the circuit.
132
+
lOOK 4.7K 270

-
10 mA !!;'IO ~ 12p.A
----
~
~
4.7K 0,
2N4256
04
2N3860
.0033
47K 27 56
RD 2%
FIGURE 6.45: HYSTERESIS INPUT CIRCUIT
For ac or bi-polar input signals there are several possible connections. If only positive signals are
to activate the relay, a diode (such as the A14) can be connected in parallel to protect the IRED from
reverse voltage damage, since, its specified peak reverse voltage capability is approximately 3 volts. If
ac signals are being used, or activation is to be polarity insensitive, a HIIAA coupler which contains
two LED's in antiparallel connection can be used .
.,,--------- .......
': /j
2
30-+
I *~ [(f'
:, I
6
5
4
,"--------- ./
FIGURE 6.46: H11AA1 AC INPUT PHOTON COUPLED ISOLATOR
For higher input voltage designs, or for any easy means of converting a dc input relay to ac, a full
wave diode bridge can be used to bias the IRED.
Isolation and Zero Voltage Switching Logic - Figure 6.47 presents two simple circuits providing
zero voltage switching. These circuits can.be used with full wave bridges or in antiparallel to provide
full wave control and are normally used to trigger power thyristors. If an input signal is present during
the time the ac voltage is between 0 to 7V, the SCR will tum-on. But, if the ac voltage has risen above
this range and the input signal is then applied, the transistor, Ql, will be biased to the" on" state and will
hold the SCR and, consequently, the relay "off" until the next zero crossing.
USING A TRANSISTOR OPTOCOUPLER

27K
-
INPUT
(l-.!!!2~'0-
22 +v USING A SCR COUPLER .
J-~- . C2038
_'-T--4-2y,2""K----4
6V 47K
01
2N
3859
330pF 68pF
FIGURE 6.47: NORMALLY OPEN. TWO TERMINAL. ZERO VOLTAGE SWITCHING HALF WAVE CONTACT CIRCUITS
133
The transistor Circuit has excellent common mode noise rejection due to use of the HilAVI, which
has under O.5pf isolation capacitance. The SCR coupler circuit can be modified to provide higher
sensitivity to input signals as illustrated below. This allows the lower cost 4N39 (HIIC3) to be used
with the ~7mA drive currents supplied by the illustrated input circuits.
+~.---------------~~~
v INPUT
1M
22 -
1M
~~-t) ~
1M
OH0800
82K
FIGURE 6.48: HIGH SENSITIVITY. NORMALLY OPEN. TWO TERMINAL.

ZERO VOLTAGE SWITCHING. HALF WAVE CONTACT
CIRCUIT
A normally closed contact circuit that provides zero voltage switching can also be designed around
the 4N39 SCR optocoupler. The following circuit illustrates the method of modifying the normally open
contact circuit by using the photoSCR to hold off the trigger SCR.
+ 0-...----...--------.
V CI038
1M 39K
-
INPUT
OT230B (-~-[·\I
\ /
------
4N39
lOOK
22
FIGURE 6.49: NORMALLY CLOSED. HALF WAVE ZVS CONTACT CIRCUIT
134
Integrated Solid State Relay Designs - A complete zero-voltage switch solid state relay contains
an input circuit, an, output circuit, and the power thyristor. The choice of specific circuits will depend on
the designer's immediate needs. The circuit in Figure 6.50 can incorporate any of the previously
described input and output circuits. It illustrates a triac power thyristor with snubber circuit and
GE-MOV®II Varistor transient over-voltage protection. The 220 resistor shunts di/dt currents, passing
through the bridge diode capacitances, from the triac gate, while the 1000 resistor limits surge and gate
currents to safe levels. Although the circuits illustrated are for 120Vrms operation, relays that operate
on 220V require higher voltage ratings on the MOV, rectifier diodes, triac and pilot SCR. The voltage
divider that senses zero crossing must also be selected to minimize power dissipation in the transistor
optoisolator circuit for 220V operation.
120V RMS
DT230H
100 lAC VOLTAGE
. AND LOAD
TERMINALS
OPTO +
+
I
;'
COUPLER
------- , \
INPUT ~
ZVS
I OUTPUT VI30LA20B
CIRCUIT I, ~
/ CIRCUIT
'- ------ ",
INPUT 22
TERMINALS
TRIAC TYPE MATCHED TO L.OAD CURRENT REQUIREMENTS, SEE TABL.E 6.1 AND 6.2
FIGURE 6.50: ZERO VOLTAGE SWITCHING SOUD STATE RELAY
Higher line voltage may be used if the diode, varistor, ZVS and power thyristor ratings are at '
compatible levels. For applications beyond triac current ratings, antiparallel SCR's may be triggered by
the ZVS network, as illustrated below.
DT230F
R1
SCR2 120V RMS.

OPTO AC
+ /
COUPLER
, + VOLTAGE
AND
INPUT I ~ \ ZVS LOAD
I OUTPUT
CIRCUIT " ...J"V-+ / CIRCUIT
'-
DT
230F
R1, C1 AND SCR TYPES MATCHED TO L.OAD REQUIREMENTS.
FIGURE 6.51: ZERO VOLTAGE SWITCHING, SOLID STATE RELAY WITH ANTIPARALLEL SCR OUTPUT
Other solid state ZVS circuits' are available. Figure 6.52 is effective for lamp and heater loads.
Some circuits driving reactive loads require integral cycle, zero voltage switching, i.e., an identical
number of positive and negative half cycles of voltage are applied to the load during a power period. The
circuit in Figure 6.53, although not strictly a relay due to the three terminal power connection, performs
the integral cycle ZVS function'when interfaced with the previous coil circuits.
135
r---~----~----~--------~--------~AC
lOOK IK
USING A SCR COUPLER
lOOK
-+ LOAD
G TRIAC
/' --- OT
INPUT ( HIICI
CIRCUITS \ t-----J 23OB. 115V/60Hz
'- OT230B
I20VAC
OT230B LOAD
IK
FIGURE 6.52: NORMALLY CLOSED

CONTACT ZVS RELAY CIRCUIT FIGURE 6.53: NORMALLY CLOSED INTEGRAL CYCLE.
\
ZERO VOLTAGE SWITCHING. CONTACT CIRCUIT
Fiber optics offers advantages in power control systems. Electrical signals do not flow along the
nonconducting fiber, minimizing shock hazard to both operator and equipment. EMIIRFI pick up on the
fiber is nonexistent (although high gain receiver circuits may require shielding), eliminating noise pick
up errors caused by sources along the cable route. Both ac anddc power systems can be controlled by
fiber optics using techniques. similar to the optoisolator solid-state relay. Triac triggering is
accomplished through the CI06BX301 (a low gate trigger current SCR) switching line voltage derived
current to the triac gate via the full wave rectifier bridge.
The primary difference between fiber optics solid state relay circuits and opto isolator circuits is
the gain since the photo currents are much smaller.
(4)
DT230B
LOAD
r---~----~~AA~-t ~~~vv-.----~ TO
25A
lOOK
ClOG
BX
30\
l20VRMS
LINE
330 22K VOLTAGE
5V C:~TROL ~
SIGNAL
~ FIBER
GFODlAl
V130LA20A
47K
GFOE1At 330pF
FIGURE 6.54: 25A FIBER OPTIC ZVS AC SOLID STATE RELAY
136
As an aid in determining the applicability of triacs to various jobs and in selection of the proper
triac, a chart has been prepared giving the characteristics of common incandescent lamp and motor
loads. These loads have high surge currents associated with them, which could complicate triac
selection without this chart.
TABLE 6.1: TYPICAL INCANDESCENT IN-RUSH CURRENT RATINGS
HEATING LIFE GENERAL

THEORETICAL TIME TO
RATED AMPS. HOT/COLD PEAK IN-RUSH RATED RATED ELECTRIC
WATTAGE TYPE STEADY RESIST. (170Vpk) (LUMENS 90%
VOLTS HOURS TRIAC
STATE RATIO (Amps) /WATT) LUMENS
(Sec.) AVERG. SELECTION
25 120 Vacuum 0.21 13.5 4.05 10.6 .10 1000 SC141

60 120 Gas Filled 0.50 13.0 9.70 14.0 .10 1000 SC1411240
100 120 Gas Filled 0.83 14.3 17.3 17.5 .13 750 SC1411240
l00(proj) 120 Gas Filled 0.87 15.5 19.4 19.5 .16 50 SC1411240
200 120 Gas Filled 1.67 16.0 40.5 18.4 .22 750 SC146/245
300 120 Gas Filled 2.50 15.8 55.0 19.2 .27 1000 SC146/245
500 120 Gas Filled 4.17 16.4 97.0 21.0 .38 1000 SC250/260
1000 120 Gas Filled 8.3 16.9 198.0 23.3 .67 1000 SC250/260
1ooo(proj) 120 Gas Filled 8.7 18.0 221.0 28.0 .85 50 SC250/26O
For 240 voltlamps, wattage may be doubled.
TABLE 6.2: FULL-LOAD MOTOR-RUNNING AND LOCKED ROTOR CURRENTS

IN AMPERES CORRESPONDING TO VARIOUS AC HORSEPOWER RATINGS
110 - 120 VOLTS 220 - 240 VOLTS .MTR. LOCK'RTR~ CURRENT AMPS. G.E.TRIAC* SELECTION
HORSE·
POWER Single- Two- Three- Single· Two· Three· Single-Phase .Two or·Three Phase
120V 240V
Phase Phase Phase Phase Phase Phase 110·120 220-240 110-120 220-240
1/10 3.0 - - 1.5 - - 18.0 9.0 - - SC141/240 SC141/240

1/8 3.8 - - 1.9 - - 22.8 11.4 - - SC146/245 SC141/24O
1/6 4.4 - - 2.2 - - 26.4 13.2 - - SC146/245 SC141/240
1/4 5.8 - - 2.9 - -. 31.8 17.4 - - SC2S0 SC141/240
1/3 7.2 - - 3.6 - - 43.2 21.6 - - SC260 SC146/245
1/2 9.8 4.0 4.0 4.9 2.0 2.0 58.8 29.4 24 12 SC265 SC260
*Assumes over-current protection has been built in to limit the duration of an locked-rotor condition.
Source: Information for these charts was taken from National Electric Code, 1971 Edition.
INCANDESCENT LAMP AND ELECTRIC MOTOR TRIAC SELECTION CHART
137
Other AC Relay Designs - The "contact" circuitry can be simplified when z~ro voltage
switching is not required. Several methods of providing this function are illustrated in Figures 6.55 and
6.56. Note that an SCR coupler in a bridge, using a high value of gate resistance connected directly
across the aeline, can give commutating dv/dt and dv/dt triggering problems, which are not present in
the ZVS circuits or at low voltages,and that not all these circuits are TTL drive compatible at the input.
The lowest parts count version of a solid state relay is an optoisolator, the triac driver H I1J .
. Unfortunately, the ability of the HI1J to drive a load on a 60Hz line. is severely limited by its power
dissipation and the dynamic characteristics of the detector. These limit applications to 30-50mA
resistive. loads on 120Vac, and slightly higher values at lower voltages.
"0'_(1--- HIIJI
tOO 6VACTO
~
120 VAC
0.02
----------0+
_ _ "&._--..&--.....
FIGURE 6.55: SIMPLE "SOLID STATE AC RELAY"
This is compatible with neon lamp drive, pilot and indicator incandescent bulbs, low voltage
control circuits, such as furnace and bell circuits (if dv/dt sufficient) - but less benign loads require a
discrete triac.
100
RESISTIVE
+5V LOAD
0.05
200V
SCISIB
1
120VAC
j
FIGURE 6.56: MINIMUM PARTS COUNT ISOLATED LOGIC TRIGGERED TRIAC
The HI1J1 triac trigger optocoupler potentially allows a simple power switching circuit utilizing
only the triac, a resistor and the optocoupler. This configuration will be sensitive to high values of dv/dt
and noise on normal power line voltages, leading to the need for the configuration shown in Figure 6.56,
where the triac snubber acts as a filter for line voltage to the optocoupler. As the snubber is not usually
used for resistive loads, the cost effectiveness of the circuit is compromised somewhat. Even with this
disadvantage, the labor, board space, and inventory of parts savings ofthis circuit often prove it cost
optimized for isolated logic control of power line switching. In applications where transient voltages on
the power line are prevalent, provisions should be made to protect the HIIJ1 from break-
over triggering.
138
Ifload current requirements are relatively low (Le., maximum forward RMS current :S 500mA) ,
an ac solid state relay can be constructed quite simply by the connection of two H 11 C· optically coupled
SCR's in a back-to-back configuration as illustrated in Figure 6.57.
LOAD
CONTROL RGI
INPUT
+ HIICI
"-
\
\ 120VAC
I
I
-'
HIICI
+
FIGURE 6.57: USING TWO PHOTON COUPLERS TO PROVIDE A SIMPLE AC RELAY
Where analog signals are being used as the logic control, hysteresis, via a Schmitt trigger input
(illustrated in Figure 6.45) can be used to prevent "chatter" or half wave power output. Circuit
operation is straightforward, and will not be described. This basic circuit can be easily modified to
provide the latching relay function as illustrated below. Latching is obtained by the storage of gate
trigger energy from the preceding half cycle in the capacitors. Power must be interrupted for more than
one full cycle of the line to insure tum-off. Resistors R and capacitors C are chosen to minimize
dissipation while assuring triggering of the respective SCRs each cycle.
DT
230F
-20mA
I
I'
240V
60Hz
LINE
\ .... 0.1
DT
230F
FIGURE 6.58: LATCHING AC SOLID STATE RELAY
139
A pulse of current, over lOmsec duration, into the HIIC4 IRED, assures triggering the latching
relay into conduction.
In microprocessor control of multiple loads, the minimum cost per load is critical. A typical
application example is a large display involving driving arrays of incandescent lamps. This circuit
provides minimal component cost per stage and optocoupler triggering of triac power switches from
logic outputs. The minimal component cost is attained by using more complex software in the logic. A
darlington output optocoupler provides gate cudent pulses to the triac, with cost advantages gained
from eliminating the current limiting resistor and from the low cost coupler. The trigger current source
is a dipped tantalum capacitor, charged from the line via a series resistor with coarse voltage regulation
being provided by the darlington signal transistor. The resistor and capacitor are shared by all the
darlington-triac pairs and are small in size and cost due to the low duty cycle of pulsing. Coupler IRED
current pulses are supplied for the duration of one logic clock pulse (2-1O#Lsec), at 0.4 to lmsec
interVals, from a LeD driver I.C.
RI
1.5K
5W
120VAC
510K!l. C1
58ILF
2!iv
DT
T230
27K!l.
+5V
LOGIC SUPPLY
SEMICONDUCTORS
Q-I,Q-2,Q-n= SCI42B
58 OC-I,OC-2,OC-n= H IIG2
IC-I, IC-2,IC-n= LED DRIVER
OUTPUTS CLOCI<i PULSED

,EACH TRIAC ON O.5mS. PRR
WHEN n "36 FOR R1,
C1 VALUES SHOWN.
FIGURE 6.59: MICROPROCESSOR TRIAC ARRAY DRIVER
The pulse timing is derived from the clock waveform when the logic system requires triac
conduction. A current limiting resistor is not used, which prevents Miller effect slowdown of the
HIIG2 switching speed to the extent the triac is supplied insufficient current to trigger. Optodarlington
power dissipation is controlled by the low duty cycle and the capacitor supply characteristics.
140
High Voltage AC Switching - A basic circuit to trigger an SCR is shown in Figure 6.60. This
circuit has the disadvantage that blocking voltage of the photon coupler output device detennines the
circuit blocking voltage, irrespective of higher main SCR capability.
+ A RI LOAD
r
CONTROL: IIiFUT
SIGNAL I SCRI VOLTAGE
L..
Adding a capacitor (C~) to the circuit, as shown in Figure 6.61 will reduce the dv/dt seen by the
photon coupler output device. The energy stored in C I , when discharged into the gate of SCR I , will
improve the di/dt capability of the main SCR.
CRI
+ A R2 RI LOAD
~H'" r ---- ,
I•
CONTROL' - CI SCRI
SIGNAL ~ ___- : INPUT
.J C VOLTAGE
G RGK
FIGURE 6.61: DERIVING THE ENERGY TO TRIGGER AN SCR FROM

ITS ANODE SUPPLY WITH AN ENERGY STORING FEATURE
Using a separate power supply for the coupler gives added flexibility to the trigger circuit; it
removes the limitation of the blocking voltage capability of the photon coupler output device. The
flexibility adds cost. Also, more than one power supply may be necessary for multiple SCR's if no
common reference points are available.
+ A RI LOAD + t LOAD
~
~~2'!.B_ C '"
r
CONTROL • IC.. , CONTROL I _ "E +
SIGNAL •
L
vb~ SIGNAL. - Tr. INPUT
VOLTAGE
C L - - -B L...-~
E_ _-+_"'/
G
Photon Coupler With SCR - Output Photon Coupler With Transistor Output
FIGURE 6.62: PHOTON COUPLER TRIGGERING MAIN SCR1 USING SEPARATE POWER SUPPLY
LOAD
+
....,....:.~x ~.
A
r. __
SCRI INPUT CONTROL
+ VOLTAGE SIGNAL I - I
L ____ -l
r o--_...J E
CONTROL I B Y
SIGNAL I
L
G
RGK
Photon Coupler With SCR - Output Photon Coupler With Transistor Output
h:onnect in place of SCR coupler)
FIGURE 6.63: NORMALLY CLOSED CONFIGURATIONS
141
LOAD
+ HIIC A R3
,"~. ir~--
INPUT
VOLTAGE
INPUT IL -
CI
__
RGI<
FIGURE 6.64: TRIGGERING SCRWITH PHOTON COUPLER AND SU~PLY VOLTAGE DIVIDER
In Figure 6.63, Rl can be connected to Point A, which will remove the voltage from the coupler
after SCR t is triggered, or to Point B so that the coupler output will always be biased by input voltage.
The former is preferred since it decreases the power dissipation in R I . A more practical form of SCR
triggering is shown in Figure 6.65. Trigger energy is obtained from the anode supply and stored in Ct.
Coupler voltage is limited by the zenervoltage.·This approach permits switching of higher voltages than
the blocking voltage capability of the output device of the photon coupler. To reduce the power losses in
R t and to obtain shorter time constants for charging Ct. the zener diode is used instead of a resistor.
A guide for selecting the component values would consist of the following steps:
1) Choose C t in a range of 0.05 to 1 microfarad. The maximum value may be limited by the
recharging time constant (RL + R t) C t while the minimum value will be set by the minimum
. pulse width-required to ensure SCR latching.
2) R2 is determined from peak gate current limits (if applicable) and minimum pulse width
requirements.
LOAD
RI
,,~.
. INPUT .
rf;u
I
L
HIIC
__ _
R2
CI
INPUT
VOLTAGE
FIGURE 6.65: TRIGGERING SCR WITH PHOTON COUPLER WITH LOW VOLTAGE REFERENCE
142
3) Select a zener diode. A 25 volt zener is a practical value since this will meet the usual gate
requirement of20 volts and 20 ohms. This will also eliminate spurious triggering due to voltage
transients.
4) Photon coupler triggering is ideal for SCR's driving inductive loads. By ensuring that the
LASCR latches on, it can supply gate current to SCR 1 until it stays on. The following table lists
values for Rl and R2 along with their power dissipation when the SCR is off for different values
of lOT and applied ac voltage.
5) Component values for dc voltage are easily computed from the following formulae:
EIN - V z
Rl = - - - -
IG
Where: Vz = zener voltage
PeRl) = IG • (E IN - V z )
p(zener) = IG • V Z
EINIRMS) IGT R1 PIR1) R2 PIR2) Plzener)

380 50 3500 17.4 560 .5 1.1
100 2000 34.8 ' 330 1.0 2.2
150 1200 52.2 220 1.5 3.4
200 1000 69.6 150 2.0 4.5
300 600 105.0 100 3.0 6.7
440 50 4250 20.5 560 .5 1.1
100 2100 41.0 330 1.0 2.2
150 1500 62.0 220 1.5 3.4
200 1000 82.0 150 2.1 4.5
300 750 125.0 100 3.1 6.7
600 50 5800 29.0 560 1.1 1.1
100 3000 58.0 270 1.6 2.2
150 2000 86.0 200 2.1 3.4
200 1500 115.0 150 2.7 4.5
300 1000 175.0 100 3.2 6.7
TABLE 6.3: COMPONENT VALUES AND POWER DISSIPATION

ASSUMING 25V ZENER DIODE. 50/60 Hz AC LINE VOLTAGES
143
The folldwing circuit utilizes the principle for triggering SCR' s connected in series. A snubber
circuit R2C2 as shown may be necessary sinceRI and Cl are tailored to obtain optimized triggering and
not fordv/dt protection. The GFOD/E pairs with fiber optics can be used with discrete SCRs to switch
thousands of volts.
LOAD
RI R2
+ A R2
HIIC
r C2
I CI
I
I-
G LOAD
VOLTAGE
TRIGGER
INPUT R2
+
r C2
I CI
I
L
FIGURE 6.66: HIGH VOLTAGE SWITCH
A photon coupler with a transistor output will limit the trigger pulse amplitude and rise time due to
CTR and saturation effects. Using the H 11 C 1, the rise time of the input pulse to the photon coupler is not
critical, and its amplitude is limited only by the HllCl tum-on sensitivity.
All the applications shown so far have the load connected to the anode,but the load can be
connected to the cathode, illustrated in Figure 6.67:
RI
HIIC R2
r LOAD
TRIGGER. I CI VOLTAGE
INPUT I
L
FIGURE 6.67: CONNECTION OF LOAD TO CATHODE OF MAIN SCR
Three Phase Circuits - Everything mentioned about single phase relays or single phase
switching or triggering with photon couplers applies also to three phase systems .
.+E
I'--+--.f--t----,f--+---,f--+-- TIME
-E 60" 120" 180' 240' 300" 360" 60"
FIGURE 6.68: VOLTAGE WAVEFORM IN THREE PHASE SYSTEMS
144
G
Q. TRIAC CONTROL b. SCR CONTROL
FIGURE 6.69: Y OR !:::. CONNECTED RESISTIVE OR INDUCTIVE LOAD
Figures 6.68 and 6.69 illustrate voltage wavefonns in a three phase system which would appear on
the triac MT-2 tenninal before triggering and at the MT -1 tenninal after triggering. The use of the H 11 C
to isolate the trigger circuitry from the power semicon4uctor will simplify the trigger circuitry
significantly. In some cases the GE3020 series triac driver will allow further circuit simplification, if
dynamic and transient effects are compatible.
Following are three phase switches for low voltage. Higher currents can be obtained by using
inverse parallel SCR' s whieh would be triggered as shown. For higher voltages and higher currents, the
circuits of the previous page can be useful in three phase circuits.
To simplify the following schematics and facilitate easy understanding of the principles involved,
the following schematic substitution is used (Note the triac driver is oflimited use at 34> voltage levels):
IN THE TWO CIRCUITS FOLLOWING:
PHASE l: m
PC-I PC-2 PC-3
+ R2 RI + R2 RI + R2 RI
CONTROL
INPUT
r
I
I
L
-- CI
r
I
I
L
- CI
r
I
I
L
- CI
YOIt 11
FIGURE 6.70: THREE PHASE SWITCH FOR INDUCTIVE LOAD
145
PHASE :r ]I: lIr
RI RI RI
+ + +
PC-I
CONTROL
r
I
I
L
-- r
I
I
L
-- r
I
I
L
--
INPUT
R2 R2 R2
FIGURE 6.71: THREE PHASE SWITCH WITH INVERSE PARALLEL SCR'S FOR INDUCTIVE LOAD AND Y OR t:. CONNECTIONS
Many other ac power control circuits are practical and cost effective. The intent of this section was
to stimulate the circuit designer by p:resenting a variety of circuits featuring opto control.
6.5.2 DC Solid State Relay Circuits

The dc relay built around an optocoupler is neither a relay nor strictly dc. This section will describe
relay function circuits that did not fit the ac solid state relay 60Hz power line switching function, as well
as strictly dc switching.
DC Latching Relay - The H 11 C readily supplies the dc latching relay function and reverse
polarity blocking, for currents up to 300mA (depending on ambient temperature). For dc use, the gate
cathode resistor may be supplemented by a capacitor to minimize transient and dv/dt sensitivity. For
pulsating dc operation, the capacitor value must be designated to either retrigger the SCR at the
application of the next pulse or prevent retriggering at the next power pulse. If not, random or undesired
4N40
/' -------
COIL {
\
CONTACT
'- --.,
.J....*
,......
I
*SEE TEXT
FIGURE 6.72: DC LATCHING RELAY CIRCUIT
operation may occur. For higher current contacts, the HIIC may be used to trigger an SCR capable of
handling the current, as illustrated in Figure 6.73:
" 146
r--_ _ _-..._RVl2~----<>-1 L~D ~--() +
+ R,
HIICI
/
, -------
~
·COIL" I
,....
\ ~
"CONTACT" DC
LINE
CI22
~--~----~--------~
eOIL VOLTAGE
RIVALUE
LINE VOLTAGE 12 24 48 120 V

C1~2PART tJ F A B D
FOR HEAT SINK RATINGS
R2 VALUE 200 470 lK 2.2K n SEE CI22 SPECIFICATION
SHEET NUMBER U50.35 AND
APPLICATION NOTE NUMBER
NO HEAT SINK RATINGS AT TA E;; 50°
200.55
I CONTACT, MAX. PULSE WIDTH DUTY CYCLE
0.67 A D.C. 100%

4.0 A 160 msec. 12%
8.0 A 160 msec. 3%
12 A 160 msec. 1%
15 A 160 msec. 0.3%
FIGURE 6.73: HIGH CURRENT DC LATCHING RELAY
Heat sinking on this, and all high current designs, must be designed for the load current and
temperature environment.
The phototransistor and photodarlington couplers act as dc relays in saturated switching, at
currents up to SmA and SOmA, respectively. This is illustrated by the H lIAS application as a high speed
synchronous relay in the long range object detector shown in Figure 6.11. When higher currents
or higher voltage capabilities are required, additional devices are required to buffer ·or amplify the
photocoupleroutput. The addition of hysteresis to provide fast switching and stable pick up and drop out
points can also be easily implemented simultaneously. Illustrated below are normally open and
+ +
47K 0.05
+ 330
33K
4N35
I
,- -----I-- CONTACTS
I
5V CONTACTS + 330 33K
,....
\
,- D44VH2
D44VH2 I
10M I
\ IK
IK \
'-
Normally Open NOrmally Closed

FIGURE 6.74: 10A, 25V DC SOLID STATE RELAYS
normally closed dc solid state relays. These circuits provide several approaches to implement the dc
relay function and are intended to stimulate the creativity of other circuit designers, and serve as
practical, cost effective examples.
147
+
I!lOK 2.2M
CONTACTS
330
,, __4!~~.,..._
+]V ... D44T8
tI ~
~ "I
IK
' ... ---- ---'
~~-+--~~--~----o
15meQ 2.7M
Normally Open Normally Closed
FIGURE 6.75: O.25A. 300V DC SOLID STATE RELAY
6.5.3 Other Power Control Circuits

Many forms of power control circuitry using optoelectronics do not fit the definition of a relay,
although optoelectronics is beneficial to their operation.
Electric Vehicle Battery Saver - The battery life, and therefore operating cost, of an electric
vehicle is severely affected by overdischarge of the battery. This circuit provides both warning and
shutdown. An electronic switch is placed in series with the propulsion motor contactor coil. Three
modes of operation are possible:
I) When the propulsion power pack voltage is above the 63V trip point the electronic switch has no
effect on operation;
2) When the propulsion power pack no load voltage is below 63V, power will not be supplied to the
propulsion motor since the electronic switch will prevent contactor operation;
3) When the propulsion power pack loaded voltage drops below'63V the contactor will close and
open due to the electronic switch. This "bucking" operation indicates to the operator need to
charge the batteries.
+ O-.....-----.--~t_-~ TO CONTACTOR
a MOTOR
I!lK r--~----'---o+
IW
5%
KELVIN
CONTACT 45
T072V HIILI
7
POWER IK
PACK
BATTERY
MOTOR
CONTACTOR
COIL
5A
IN5059
ALL RESISTORS 1/2W, !5% UNLESS OTHERWISE NOTED.
FIGURE 6.76: ELECTRIC VEHICLE BATTERY SAVER
148
+12VDC
+24VDC
24VDC
MOTOR
lSTALL~10A
0.22
CONTROLLER
FIGURE 6.77: DC VARIABLE SPEED MOTOR CONTROL
DC power can also be controlled via fiber optics. The circuit of Figure 6.77 illustrates this:
providing an insulated speed control path for a small dc actuator motor ( :s 1112 hp). Control logic is a
self-contained module requiring about 300mW at 12V, which can be battery powered. The control
module furnishes infrared pulses, at a rate of 160Hz, with a duty cycle determined by the position of the
speed adjust potentiometer. The programmable unijunction multivibrator provides approximately
10mA pulses to the GFOE1A1 at duty cycles adjustable over a range of 1 % to 99%. The infrared pulses
are detected by the GFOD1A1, amplified by the D39C1 PNP darlington, and supplied to the power
drive switch, which is connected in a Schmitt trigger configuration to supply the motor voltage pulses
during the infrared pulses. Thus, the motor's average supply voltage is pulse width modulated to the
desired speed, while its current is maintained between pulses by the Al15F free-wheeling diode. The
snubber network connected in parallel with the power switch minimizes peak power dissipation in the
output transistor, and enhancing reliability. Note that larger hp motors can be driven by adding another
stage of current gain, while longer fiber range lengths can be obtained with an amplifier transistor
driving the GFOEIAI.
20 kHz Arc Welding Inverter (Full Power Modulation and No-Load Shutdown) - The Class A
series resonant inverter portrayed in Figure 6.78 is well-known and respected for its high efficiency,
low cost, and, small size, provided that operating frequency is greater than about 3kHz. The
disadvantages are (at least in high power versions) the difficulty in effecting smooth RFI-less output
voltage modulation without significant added complexity, and a natural tendency to "run away" under
no-load (high Q) conditions. The 20kHz control circuit depicted in Figure 6.79 overcomes these
shortcomings by feeding back into the asymmetrical thyristor trigger pulse generators (Figure 6.80)
signals that simultaneously shut the inverter down, when its output voltage exceeds a preset threshold,
and time-ratio modulates the output. This feedback is accomplished with full galvanic isolation between
input and output thanks to an H 11 L opto Schmitt coupler. The fundamental 20kHz gate firing pulses are
generated by a PUT relaxation oscillator Qt. The pulses are then amplified by transistors Q2 and Q3. The
20 kHz sinusoidal load current flowing in the primary of the output transformer is then detected by a
current transformer CT1, with operational amplifier Al converting the sine wave into a square wave
whose transitions coincide with the load current zero points. Consequently, each time the output current
changes, phase A 1 also changes state and, via transistor Q4, either connects the thyristor gate to a minus
8Vdc supply (for minimum "gate assisted" tum-off time and highest reapplied dV Idt capability) or
149
disables this supply to prepare the'thyristor for subsequent firing.
Because firing always occurs at a fixed time interval (determined by the PUT time constant
Rl x Cl) after each load current zero point, the circuit operating frequency always coincides with the
natural resonant frequency, the fixed time interval being chosen to equal thyristor turn-off time, tq • Note
that reliable PUT oscillation is guaranteed by turning it off solidly via Qs each time Q4 reapplies negative
bias to the thyristor gate. The HIlL opto Schmitt is connected in parallel with Qs. If the loadis removed
(termination of a weld), causing the inverter output voltage to rise precipitously, the V56MA varistor
will conduct to energize the HIlL input diode, and the HIlL output stage will likewise chimp off the '
PUT. Oscillation then ceases until the output voltage falls once again below the off threshold voltage of
the HllL.
Modulation intelligence is coupled into this same HIlL through two additionaIPUT's, Q6 and Q,
Q6 oscillates at a fixed 1.25kHz, which establishes the modulation frequency. Duty cycle is determined
by a second oscillator, Q7, whose conduction state (on or off) establishes or removes current from the
HIlL diode. \yith a 20kHz fundamental inverter frequency and a modulation frequency of 1.25kHz, the
resultant time ratio controlled power output is given by
POUT = (PM x +)
where PM = 100% continuous output power. Minimum power is one cycle of 20kHz (50p.s) in the
1.25kHz I,llodulation frame (800p.s), that is, 6.25% PM'
di/dt CHOKE
T1
220VAC
50Hz
220VAC T1 (2 PLACES)
TO 6.3VAC (X2) A139E CA358N ASYMMETRIC
(4PLACES) SCR PLUS A177N DIODE
II
+
ARC
-~+
FIGURE 6.78: CLASS "A" - 3KW WElDING INVERTER
150
ARC
+
lK
OFF
3.3K lOOK 10K 3.3K
f=125Hz.
GE
1N4148
lK 470
GE
FIGURE 6.79: POWER MODULATOR (WITH ON-OFF 1N41<!8
SWITCH & OPEN CIRCUIT PROTECTION) <D HIILt

10K ~(TO GATE BOARD)
® ARC
OUTPUT POWER=h~'XP)
WHERE P=100%OUTPUT
FROM INVERTER.
47K(MODULE #1 ONLY)
I GATE MODULE ..., I

+8VDC
AI4A
(4 PLACES)
~~
500 .0047
+ F Cl
11,-6_.3_VA_C_-+
22 01
MAIN lOW
TRANS-
FORMER
PRIMARY
LINE
lK
1K
QUAD
COMPARATOR
T1 SEE FIG.6.7S
IL C2-0.047/4F 11 KV
NOTES (!)SCHEMATIC AS SHOWN FOR MODULE 11'1.
Dl-A114M
CURRENT REVERSE AI INPUTS FOR MODULE #1
TRANSFORMER @HI1L REQUIRED ONLY FOR MODULE 11'1.
(lOOT WOUND
ON ARNOLD ALL RESISTORS 112W EXCEPT AS NOTED.
A-9301572 CORE)
FIGURE 6.80: 20KHz INVERTER GATE DRIVE MODULE
Glow Plug Driver -Model aitplanes, boats, and cars use glow plug ignitions for their miniature
(O.8cc - 15cc) internal combustion engines. Such engines dispense with the heavy on-board batteries,
H. T. coil, and "condenser" required for conventional spark ignition, while simultaneously developing
much higher RPM (hence power) than the compression ignition (diesel) motors. The heart of a glow
plug is a platinum alloy coil heated to incandescence for engine starting by an external battery, either 1.5
Volts or 2 Volts. Supplementing this battery, a second 12 Volt power supply is frequently required for
the engine starter, together with a third 6 Volt type for the electrical fuel pump.
151
Rather than being burdened by all these multiple energy sources, the model builder would prefer to
carry (and buy) a single 12 Volt battery, deriving the lower voltages from this by use of suitable
electronic step-down transformers (choppers). The glow driver illustrated in Figure 6.8i does this and
offers the additional benefit of (through negative feedback) maintaining constant plug termperature
independent of engine flooding, or battery voltage while the starter is cranking.
In this circuit, the PUT relaxation oscillator QI turns on the output chopper transistor Q2 at a fixed
repetition rate determined by RI and Cl. Current then flows through the glow plug and the parallel
combination of the current sense resistor R2 and the LED associated with the HilL Schmitt trigger.
With the plug cold (low resistance), current is high, the HilL is biased "on," and Q3 conducts to
sustain base drive to Q2. Once the plug has attained optimum operating temperature, which can be
monitored by its ohmic resistance, the HIlL is programmed (via Rp) to switch off, removing base drive
from Q3 and Q2.
However, since the HIlL senses glow plug current, not resistance, this is only valid if supply
voltag.e is constant, which is not always the case. Transistor Q4 provides suitable compensation in this
case; if battery voltage falls (during cold cranking, for instance), the collector current of Q4 rises,
causing additional current to flow through the LED, thus delaying the switch-off point for a given plllg
current. The circuit holds plug temperature relatively constant, with the plug either completely dry or
thoroughly "wet," over an input voltage range of 8 to 16 Volts. A similar configuration can be
employed to maintain constant temperature for a full size truck diesel glow plug (28 Volts supply, 12
Volts glow plug); in this case, since plug temperature excursions are not so great, a hysteresis expansion
resistor RH may be required.
ALL RESiSTORS 1/2W EXCEPT AS NOTED OTHERWISE
+12V( NOMINAL)
2.2K PCI
Q3
IK
GLOWPLUG
(1.5VOLT OR
2 VOLTS)
6.8V
ZENER
1.2 CI
K O.OO5p.F
OV~~--~----~----~ ____~__~~______- - J
Rc - SUPPLY VOLTAGE COMPENSATION TRIM. PCI -HlIL2.

Rp- PLUG TEMPERATURE ADJUST. Q3 - 029E2
QI - 2N6028 Q4.Q5- 03301
FIGURE 6.81: GLOW PLUG DRIVER
Switching Power Supply with Optocoupler Isolated Constant Voltage Feedback - By virtue of its
PNPN structure, which is that of a thyristor, the output stage of an H1ICphoto thyristor coupler may
, also be connected as a bilateral (symmetrical) PNP or as a unilateral (conventional) PNP transistor.
Some suggested uses of the device in the former mode are outlined in the opening chapters of this
Manual. Often overlooked, however, is the fact that ordinary PNP transistor optocouplers are rare and
that concomitantly the H 11 C photo thyristor coupler can fill this function in sockets demanding PNP
logic. Such a situation is illustrated in Figure 6.82, a low voltage high clirrent output, switching dc
power supply is running offthe 220 Volt ac input. In this circuit, an ST2 diac relaxation oscillator (Q3'
C 1, and the diac) initiates conduction of the output switching transistor Qlo the on-time of which is
maintained constant by a separate timing/commutation network consisting of Q2' C2, the SUS and SCR
1. Output voltage, consequently, is dependent on duty cycle. To compensate for unwanted variations of
output voltage due to input voltage or load resistance fluctuations, an HllC wired as a linear-mode
152
ALL RESISTORS liZ WATT EXCEPT AS NOTED OTHERWISE
VES70Z
+ 310V
10K ~470
r?;
47K
.,j!",~
~
A15M ,,"10'1
(4PL ACES)
10K \ ..
'Y'': ~
~R.
-- '- 10K
0--
Z ZOVAC
. ST2r:~"
DIAC\::
+ 100
50160Hz
;::; Q2
~ 690Sl
~
(CI06D) lZ 18 VQI lOW BAI59
350V t-,;
15K 47K
;.r::
Cl
10"F
~+
~
H~oo 180 '----<
5W 3W 2.2p.F;'::;:
II L A114U Rss
0.39 ;:';:; 3.4"F
100
3W lKV
SCRI
Q
~n
Ro - ON TIME ADJUST.
RL - LOAD VOLTAGE ADJUST.
RF- FEEDBACK GAIN ADJUST.
Ql- D64VP5 SELECTED FOR VCEV l>800VOLTS.
1~~T
'-~ tJP\ SUS
'-!r 2N4988
L - 25p.H OUTPUT TRANSFORMER
SCR1- BRY55S BIFILAR CORE-B50GER 42X 21 XI5 (LCC)'
ALL UNMARKED DIODES-AI14B. WOUND 1nl-95TURNS 4>=0.6mm.
Q4,Q5- 2N6001. ~a~? n2-95TURNS 4>'O.6mm.
VOUT- 2VOLTStv12VDC. n3-5 TURNS OF4 STRANDS·4>=lmm PARALLEL.
IL - 0 -10AMPERES. n4-3 TURNS 4>=D.4mm.
FIGURE 6.82: 12V SWITCHING POWER SUPPLY

unilateral PNP transistor in a stable differential amplifier configuration is connected into the
galvanically isolated negative feedback loop that determines duty cycle, hence output voltage. Of
further interest, in this circuit, is the use of several low current, high voltage (400 Volt VDRM) thyristors
(Q2' Q3) also used as PNP remote base transistors. Short-circuit protection is assured by coupling Ql
collector current feedback into the tum-off circuitry via Rss.
Low Power (P OUT ~ 50 Watts from 220 Volts AC Input) Zero Voltage Switch Temperature
Controller- The "zero voltage switching" technique is widely used to modulate heating and
similar types of ac loads where the time constant associated with the load (tens of seconds to minutes) is
sufficiently long to allow smooth proportional modulation by time ratio control, using one complete
cycle of the ac input voltage as the minimum switching movement. This method of control, illustrated in
Figure 6.83, reduces Radio Frequency Interference (inherent in competing phase-control systems)
significantly. Despite its attractions, the traditional triac-based ZVS is virtually unusable for the control
of very low power loads, especially from 220 Volt ac inputs due to the triac's reluctance to latch-on into
the near-zero instantaneous currents that flow through it and the load near the ac voltage zero crossover
points. The circuit of Figure 6.84 side steps the latching problem by employing a pair of very sensitive
low current reverse blocking thyristors (C 106) connectedin antiparallel; these are triggered by a simple
thermistor modulated differential amplifer (Ql> Q2), with zero voltage logic furnished by an HIIAAI ac
input optocoupler. With the NTC thermistor TH calling for heat, transistor Ql is cut off and Q2 is on,
which would normally provide continuous base drive to Q3' with consequent triggering of either SCR,
or of SCR 2 via SCR I, depending on phasing of the ac input.
Note that when the ac input voltage is positive with respect to SCR 2, SCR I is reverse biased and,
in t~e presence of "gate" current from Q3' behaves as a remote base transistor, whose output provides
via blocking diode CR I, positive gate trigger current for SCR 2. When the ac input polarity is reversed
(SCR I 's anode positive),·SCR I behaves as a direct fired conventional thyristor. "Trigger" current to
SCRI, however, is not continuous, even when TH is calling for heat and Q2 is delivering base current to
Q3' In this situation, Q3 is inhibited from conduction by the clamping action of PCI, an HIIAA
153
HIIAAI
PCI
lK
.100poF
15V 220VAC
50K 10K 33K IK

TEMP.
SET
FIGURE 6.83: LOW POWER 1>50W) ZVS PROPORTIONAL TEMPERATURE CONTROLLER
photocoupler, except during those brief instants when the ac input voltage is near zero and the coupler
input diodes are deprived of current.
Through these means, triggering of either SCR can occur only at ac voltage crossing points, and
RFI-Iess operation results. The proportional control feature is injected via the positive feedback action
of capacitor CM, which converts the differential amplifier Ql' Q2 into a simple multivibrator, whose duty
cycle varies from one to99 percent according to the resistance ofTH. Zener diode Z lis optional, being
preferred when maximum immunity from ac voltage induced temperature drift is desired.
LOAD .
D
AC·
MAINS
t
OAD
.
SOLID STATE
SWITCH
I
OPOWER~
TO LOAD
V
1 VOLTAGE
_________________________
.-
I ~ __--+
• TIME
1.. - - - - - 1 : - - - - - - -....1
...
I
V\
IV
1
~/\I\
IV\!
I .
1
I
100"1. POWER
TO LOAD
I
(PMAX)
IN GENERAL. PLOAD = P MAX b!o·)
FIGURE 6.84: PRINCIPLE OF ZERO VOLTAGE SWITCHING
154
~~71
GLOSSARY OF SYMBOLS AND TERMS
Optoelectronics spans the disciplines of electronics, photometry, radiometry and optics with
dashes of physics and statistical analysis. The same word or symbol can have two different meanings,
depending on the discipline involved. To simplify use of this glossary, words and symbols are
separately listed, alphabetically; following each is the common discipline of'usage and then the
definition, as used in this Handbook.
7.1 OPTOELECTRONIC SYMBOLS
A - electronic - gain of an amplifier.
A - optic - area.
A - reliability - acceleration factor, describes change in a predicted basic
phenomena response due to secondary conditions denoted by
subscript.
- radiometric - Angstrom, a unit of wavelength equal to lO-lOmeters. Archaic.
- photometric - luminous intensity of an area light source, usually expressed
in candela/unit area.
- radiometric - radiant intensity of an area source, Radiance, usually
expressed in Watts/unit area.
(3 - electronic - Beta, current gain ofa transistor. See hFE •
C - electronic - inter-element capacitance, primarily junction capacitance, of
a component. Terminals indicated by subscripts.
C.T. - photometric - Color Temperature. The temperature of a black body, when
its color best approximates the designated source. Normally
used for lamps, and determined at .45 and .65 microns.
CTR - electronic - Current Transfer Ratio. The ratio of output current to input
current, at a specified bias, of an optocoupler. Usually in
percent.
DIP - electronic - Dual In-Line Package. Standard integrated circuit and
optocoupler flat package with two rows of terffiinals on
opposite sides. May be plastic or ceramic bodied.
di/dt - electronic - Critical rate-of-rise of current rating of a thyristor. Higher
rates may cause current crowding and device damage.
dv/dt - electronic - Critical tate-of-rise of voltage parameter of a thyristor. Higher
rates may cause device tum-on via junction capacitance
charging currentsJ)rovid~ng gate signal.
E - photometric - Illumination. Luminous flux density incident on a receiver,
usually in lumens per unit of surface.
Ee - radiometric - Irradiance. See H.
j/# - optic - Lens parameter. The ratio of focal length to lens diameter.
F - optic - Focal length of a lens or lens system.
F - photometric - Illumination. Total luminous flux incidents on a receiver,
normally in lumens. F = IE· dA.
GaAs - electronic - Gallium Arsenide. The crystalline compound which forms
IRED's when suitably doped.
GaAIAs· - electronic - Gallium Aluminum Arsenide. Another crystalline compound
used to form both IRED's and LED's.
155
H - radiometric - Irradiance. Radiant flux density incident on a receiver,
usually in Watts per unit area. Ee also used ..
- radiometric - Effective irradiance. The irradiance perceived by a given
receiver, usually in effective Watts per unit area.
- electronic - Current gain of a transistor biased common emitter. The ratio
of collector current to base current· at specified bias
conditions.
- reliability - High temperature reverse bias operating life test.
- electronic - Thyristor or diode anode current, ITM is preferred terminology
for thyristors.
IB - electronic - Transistor base 'current.
Ie - electronic - Transistor collector current.
ICB(on) - electronic - Utilized for phototransistors and photodarlingtons to denote
photodiode current in the illuminated condition. This provides
differentiation from both photodiode plus amplifier illumina-
ted current and offstate leakage current.
- electronic - Dark current. The leakage current of an unilluminated
photodetector.
- electronic - Transistor emitter current.
- electronic - Forward bias current, usually of IRED. Additional subscript
denotes measurement of stress bias condition, if required.
- electronic - Light current. The current through an illuminated photodetec-
tor at specified bias conditions.
- photometric - Luminous intensity of a point source of light, normally in
candela.
IR - radiometric - Infrared. Radiation of too great a wavelength to be normally
perceived by the eye. Radiation ,between 0.78 and 100
microns wavelength.
IRED - electronic - Infrared emitting diode. A diode which emits infrared
radiation when forward bias current flows through it.
L - photometric - Luminance of an area source of light, usually in lumens per
unit area.
LASCR - electronic - Light activated silicon control rectifier. Also photo SCR.
LED - electronic - Light emitting diode.
A - electronic - Predicted failure rate of an electronic component subjected to
specific stress and confidence limit ..
- radiometric - Wavelength of radiation.
m - optics - Magnification of a lens. Ratio of image size to source size.
m - physics - Meter, international standard unit of length.
MSCP - photometric - Mean spherical candle power. Average luminous power
output, of a source, per sterradian. .
n.a. - optics - Numerical aperture of a lens. n.a. = 2fl#.
- radiometric - Conversion efficiency of-an electrically powered source. The
ratio of radiant power output to electrical power input.
OPA - quality - Outgoing process average of portion defects shipped, usually
expressed in parts per miliion. It is derived from the sampling
data and the lot acceptance rates.
156
P - radiometric - Power, total flux in Watts.
Pn - electronic - Power dissipated as heat.
PPM - quality - Fraction of defectives observed expressed in parts per million.
Equal to number defective times one million divided by
number inspected. For zero defects a statistically derived
factor is used to estimate the defect density.
PPS - electronic - Repetition rate in pulses per second.
PRM - electronic - Pulse rate modulation, coding an analog signal on a train of
pulses by varying the time between pulses.
PUT - electronic - Programmable Unijunction Transistor. A thyristor specified
. to provide the unijunction transistor function.
Si - electronic - Silicon. The semiconductor material which is selectively
doped to make photodiodes, phototransistors, photo-
darlington and photoSCR detectors.
SCR - electronic - Silicon Controlled Rectifier. A thryistor, reverse blocking,
which can block or conduct in forward bias, conduction
between anode and cathode being initiated by forward bias of
the gate-cathode junction.
- electronic - Ambient temperature.
- electronic - Case temperature, the temperature of a specified point on a
component.
- electronic - Junction temperature, the temperature of the chip of a
semiconductor device. This is the factor which determines
maximum power dissipation.
t - electronic - Time. Subscripts indicate switching times (d-delay, f-fall,
r-rise and s-storage), intervals in reliability prediction
(o-operating, x-equivalent operating), etc.
UCL - reliability - Upper confidence level. A statistical determination of the
confidence of a prediction of the highest level of an
occurrence based on the apercent of occurrences in a quantity
from a homogeneous population.
UJT - electronic - Unijunction transistor. A three-terminal, voltage threshold
semiconductor device commonly used for oscillators and time
delays.
v - electronic - Voltage. Subscripts indicate the terminals which the voltage is
measured across, the first subscript commonly denoting the
positive terminal.
w - radiometric . . .:. . Radiant emittance. The flux density, in Watts/unit area,
emitted by the surface source.
7.2 OPTOELECTRONIC TERMS
Acceleration - reliability - a factor which describes the change in a predicted phenomena

Factor, caused by a secondary effect.
Angstrom Unit - radiometric - 10- 10 meters, obsolete term used to describe wavelength of
radiation.
Anode - electronic - the main terminal, of a device, which is norm~lly biased
positive. See cathode.
157
Bandgap - electronic - the potential difference between the atomic valence and
conduction bands. This determines the forward voltage drop
and freque,ncy of light output of a diode.
Base - electronic - the control terminal of a transistor.
Beta - electronic - common emitter current gain of a transistor. Collector current
divided by base current.
Bias - electronic -the electrical conditions of component operation or test.
Black Body - radiometric - a body which reflects no radiation. Its radiation spectrum is a
simple function of its temperature.
Candela - photometric - unit ofluminous intensity, defined by 1/60 cm 2 of'a black body
at 2042°K.
Cathode - electronic - the main terminal, of a device, which is normally biased
negative. See anode.
Chatter - electronic - a rapid, normally undesired, oscillation of relay contacts
between the open and closed state.
Collector - electronic - the main terminal of a transistor in which current flow is
normally relatively independent of voltage bias.
Color - photometric - the temperature of a black body when its color best
Temperature approximates the designated source. Normally used for lamps
and determined at .45 and .65 microns.
Commutating - electronic - a measure of the ability of a triac to block a rapidly rising
dv/dt voltage immediately after conduction of the opposite polarity.
Coupled dv I dt - electronic - a measure of the ability of an opto thyristor coupler to block
when the coupler is subjected to rapidly changing isolation
voltage.
Coupler .....;. electronic - abbreviation for optocoupler .
Critical Angle - optics - the largest angle of incidence of light, on the interface of two
transmission mediums; that light will be transmitted between
the mediums. Light at greater angles of incidence will be
reflected.
Current Transfer - electronic - the ratio of output current to input current, at a specified bias,
Ratio of an optocoupler.
Dark Current - electronic - Leakage current, usually ICEO ' of a photodetector with no
incident light.
Darlington - electronic - A composite transistor containing two transistors coqnected to
multiply current gain.
Detector - radiometric - A device which changes light energy (radiation) to electrical
energy.
Diffraction - optics - The phenomena of light bending at the edge of an obstacle.
Demonstrates wave properties of light.
Diode - electronic - A device that normally permits only one direction of current
flow. A P-N junctioQ diode will generate electricity when the.
junction is illuminated.
Doping - electronic - The addition of carrier supplying impurities to semiconductor
crystals.
Duty Cycle - electronic - The ratio of on time to period of a pulse train.
Efficiency - electronic - In this handbook, refers to the ratio of output power of a
source to electrical input power.
158
Effective - electronic - Irradiance as perceived by a detector.
Irradiance
Emittance - radiometric - Power radiated per unit area from a surface.
Emitter - electronic - Main terminal of a transistor which bias voltage normally has
a major effect on curren~.
Emitter - radiometric - A source of radiation.
Epitaxial - electronic - Material added to a crystalline structure which has and
maintains the original crystals' structure.
f/number - optics - Ratio of focal length to lens diameter.
Fiber Opti~s - optics - Transparent fiber which transmits light along the fiber's axis
due to the critical angle at the fiber's circumference.
Foot Candle - photometric - Illumination level of one lumen per square foot.
Foot Lambert - photometric - Brightness of source of one lumen per square foot.
Gallium Arsenide - electronic - A crystalline compound which is doped to fOrIn IRED's.
Gallium - electronic - Another crystalline compoundwhich is doped to form IRED's
Aluminum Arsenide and LED's.
Gate - electronic - Control terminal of an SCR or, a logic function component.
Hash - electronic - Random, high frequency noise on a signal or logic line.
Illumination - photometric - Light level on a unit area.
Infrared - photometric - Radiation of longer wavelength than normally perceived by
the eye, i.e., .78 to 100 microns wavelength.
Interrupter - electronic ~ Optoelectronic device which detects objects which break the
Module light beam from an emitter to a detector.
Irradiance - radiometric - Radiated power per unit area incident on a surface, broadband
analogy to illumination.
Isolation Voltage - electronic - The dielectric withstanding voltage capability of an optocou-
pIer under defined conditions and time.
L i g h t - photometric - Radiation normally perceived by the eye, i.e., .38 to .78
microns wavelength.
Light Current - electronic - Current through a photodetector when illuminated under
specified bias conditions.
Lumen - photometric - Unit of radiant flux through one steradian from a one-candela
source.
Micron - radiometric - 10-6 meters.
Modulation - electronic - The transmission of information by modifying a carrier
signal-usually its amplitude or frequency.
Monochrometer - photometric - An instrument which is a source of any specific wavelength of
radiation over a specified band.
Monochromatic - photometric - Of a single color, wavelength.
Nanometer - radiometric - 10-9 meters.
Normalized - electronic - Presentation of the change in a parameter, due to a test
condition change, made by dividing the final value by the
initial value.
Optocoupler - electronic - A single componen~ which transmits electrical information,
without electrical connection, between a light source and a
light detector.
Optoisolator - electronic - Optocoupler.
159
Peak Spectral '- radiometric - Wavelength of highest intensity of a source.
Emission
Photoconductor - electronic - A material with resistivity that varies with illumination level.
Photocoupler - electronic - Optocoupler.
Photo darlington - electronic ...,.- Light sensitive, darlington connected, transistor pair photo-
detector.
Photo detector - electronic - A device which provides an electrical signal when irradiated
by infrared, visible, and/or ultraviolet light.
Photodiode - electronic - p-n junction semiconductor diode photodetector.
.
Photon - electronic - Quantum of light from wave theory.
PhotoSCR - electronic - LASCR.
Phototransistor - electronic - A transistor photodetector.
Photovoltaic Cell - electronic - A photodiode connected to supply electricity when illumi-
nated. .
Point Source - radiometric - A source with maximum dimension less than 1/10 the distance
between source and detector.
Reflector Module -:- electronic - Component containing a source and detector which detects
objects which complete the light path by reflecting the light.
Silicon - electronic - Crystalline element which is doped to make photodiode,
phototransistor, photodarlington, photoSCR, etc. detectors.
Silicon Controlled - electronic - A reverse blocking thyristor which can block or conduct in
Rectifier forward bias, conduction between the anode and cathode
being initiated by forward bias of the gate cathode junction.
Source - radiometric - A device which provides radiant energy.
Spectral - radiometric - A plot, usually normalized, of source intensity vs. wavelength
Distribution observed.
Spectral - radiometric - A plot of detector sensitivy vs. wavelength detected.
Sensitivity
Steradian - radiometric ,- Unit of solid angle. A sphere contains 411" steradians.
Synchroneous - electronic - A technique which detects low level pulses by detecting only
Detection signal changes which occur at the same time as the pulse ..
Thermopile - radiometric - A very broadband, heat sensing, radiation detector.
Transistor - electronic - Three-terminal semiconductor device which behaves as a
current controlled current source.
Triac - electronic - A thyristor which can block or conduct in either polarity.
Conduction is initiated by forward bias of a gate-MTI
junction.
Triac driver - electronic - A low current thyristor used to control power thyristors.
Usually a photodetector in an optoisolator.
Tungsten - radiometric - The element normally used for incandescent lamp filaments.
. Unijunction - electronic - A three-terminal voltage threshold semiconductor device
Transistor normally used for oscillators and time delays.
Wavelength - radiometric - The speed. of light divided by the frequency of the
electromagnetic radiation~wave theory of iight.
Watt - electronic - Unit of power, a volt ampere.
Watt - photometric - Unit of power, 685 lumens at 0.555 microns wavelength.
160
OPTO ELECTRONIC DEVICES
SCHEMATIC SYMBOLS USED IN THIS MANUAL
DISCRETE DEVICES OPTOISOLATORS

Light or Infrared Emitting Photodiode Output
Diode
=0=:0=
A
6' K
Phototransistor Output
Photodiode
=O::c9=
A
~ K
PhotoDarlington Output
PhotoDarlington =O::~
.~ E
PhotoSCR Output
Phototransistor TI~Q=
~cQ. Bilateral Analog FET
n::J+ Output
.4Q E =o~tt
niac Driver Output
Photo SCR or LASCR A
~
Schmitt nigger Output
K
:n::~
Photo Schmitt Trigger
161
@[/i)@[W~@[j' ®
BIBLIOGRAPHY AND REFERENCES
1. Morrison, Law, A Linear Opto Isolator, Ferranti Ltd., Edinburgh, Scotland.
2. McDermott,"After 13 Years,Standardization ofOpto Isolators ... ," ElectronicDesign, Febru-
ary 1, 1974.
3. Hendriks, "Avoid. IcEo Measurements," Electronic Design, November 22, 1975.
4. Dean, "Designers Guide to Small Incandescent Lamps," Appliance Manufacturer, Novem-
ber 1973.
5. Engstromet.al., Electro Optics Handbook, RCA, Harrison, NJ.
6. Sahm, "Get to Know the Opto Coupler," Electronic Design, June 7, 1975.
7. Guide WJCTZ, File E51868, Underwritters Laboratories, Inc.
8. Sahm, High Performance Circuits ... PhotodarlingtQn Transistor, GE, Auburn NY.
9. Kom, How to Evaluate ... Light Sensitive Silicon Devices, GE, Auburn, NY.
10. Sahm, How to Use ... Photodarlington Transistor, GE, Auburn, NY.
11. Halverson, Koshire, Thorson, Isolation ... Telephone Circuit Protection ... , IEEE #C751113-6.
12. MIL-HDBK-217D. Reliability Prediction of Electronic Equipment, RADC, Griffiss AFB,
Rome, NY. .
13. Franson, "Optical Couplers," EDN, October 5, 1975.
14. Sahm, Tarzia, "Optoelectronic~ in Manufacturing Applications," SME #AD74-427.
15. Korn, Photon Couplers, GE, Auburn, NY.
16. Ott, "Ringing Problems onLong Subscriber Loops," Telephony, June 24, 1974.
17. 'Flores, Moore, Buster, "Rural Subscriber Loops Go Electronic," Telephony, June 24, 1974;
18. Gratham et.al., SCR Manual, 6th ed., GE, Auburn, NY.
19. Hall et.al., Solid State Lamp Manual, GE, Cleveland, Ohio.
20. Sahm, "Solid State Relays Aren't All Alike," Electronic Products, July 15, 1974.
21. Specifications Governing the Use of Photocouplers, proposed November 1975, rNETI
SOTELEC, France.
22. Johnson, Kawasaki, "The Coupling ... Diodes into Optical Fibers ... ," CRC Report #1250,
Communications Research Centre, Ottawa. --
23. Bracale, Lombardi, "The Design of Broadband Light Modulators," The Radio and Electronic
Eng~neer, April 1970.
24. Howell, The Light Activated SCR, GE, Auburn, NY.
25. The Measurement ; . .'Dielectric Strength of Glasses, Coining Glass Works, Coming, NY.
26. Thomas, The Mechanisms ... D~gradation ... GaAs Infrared Emitting Diodes, GSFC, FMR
08-001, NASA, Goddard Space Flight Center, Greenbelt, Md.
27. G~tham, The Photocoupler,GE, Amstelveen.
28. Cleary, et.al., Transistor Manual, 7th ed.; Syracuse, NY.
29. Blanks, "Electronics Reliability: A State of the Art Survey," Microelectronics and Reliability,
Volume 20, #3, 1980.
30. Herr, et.al., "Reliability Evaluation and Prediction for Discrete Semiconductors," IEEE Trans.
of Reliability, August 1980.
31. Nordby, Photocouplers II, Elektronikcentralen, Denmark, July 1980.
32. Mason, Electrically Conductive Epoxies - How Reliable are They, GO SAM Symposium,
March 1980.
33. What Is ... The Lifetime of Optoelectronie Components, ASEA-HAFO, Sweden.
34. Lennertet.a1., Computer Control Life Testing of LEO's, February 1981, DTIC:AEDC-TR80·,2S.
162
· @}L®~ em
OPTOELECTRONIC SPECIFICATIONS~
Emitter Specifications ......................... ; . . . . . . . . . . . . . . . . . . . . . . .. 166

Detector Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 184
Fiber Optics Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 196
Optoisolator Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 202
Module Specifications .................................................. 280
European "Pro Electron" Registered Types ................................ 312
Generic Optoisolator Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 352
Cross Reference of Competitive Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 377
163
SOLIOSWE
@ 0 CO ELECTRONICS
Infrared Emitter 1N6264
• -'4+1 lN6264, lN6265

Gallium Arsenide Infrared - Emitting Diode
The General Electric 1N6264 and 1N6265 Series are gallium arsenide,
light emitting diodes which emit non-coherent, infrared energy. They
are ideally suited for use with silicon detectors. The IN6264 has a lens
which provides a narrow beam angle while the 1N6265 has a flat win-
dow for a wide bllam angle which is useful with extemallensing.
INCHES MWMETERS
SYMBOl.
absolute maximum ratings:
.-
MIN. MAX. MIN. MAX. NOTES
(25°C unless otherwise specified)
Voltages ,.
A
.011
.25&
.021
.230
.407
5031
6.47
.sn·
544
t Reverse Voltage VR 3 volts
_0
_01 ·.leQ .187 4.57 4.77
Currents •. .IOONOM.
.050_
2.54NDM.
1.27_.
~
I
t Forward Current (continuous) IF 100 rnA h , ,010
,,,78
I .051 .044 .79 1.1,1
t Forward Current (pw 1 /JS, 200 Hz) IF 10 A k :03& •. 046 : .'2. 1.16 I
L 1,00 2.5;4'"
Dissipation Cl .'1" 4$" l
t Power Dissipation (TA = 2S 0 C)* PT 170 mW
Power Dissipation (Tc = 25°C)** PT 1.3 W ,1N6265
Temperatures
t Junction temperature TJ -65 to +150 °c
t Storage'Temperature Tstg -65 to +150 'oc
t Lead Soldering Time 0/16" [1.6mm] TL 260 °c
from case for 10 sec.)
*Derate 1.36 mWrC above 25°C ambient.
**Derate lO.4mWrC above 25°C case~
electrical characteristics: (25°C unless otherwise specified) S'IM8CL
-
MIN.
-.
INCI£S MWMETERS
MIN. NOTES
t Reverse Leakage Current

(VR = 3V)
SYM.
IR
MIN. TYP. MAX.
10
UNITS
IJ.A
A
A
--•
~
"h
.-
.016
.180
.100_.
.187
.OSONOM.
.155
.021
.230
.407
PI 1i.84
4.57 4.77
2.54_
1.27NOM
liD
6n
I
0&
t Forward Voltage I .051 ~IO
I .044 ,7<) 1.11
(IF = 100mA) VF 1.4 1.7 Volts
• .056 .0441 ,9il I'TS
1.111 I
t Total Power Output (note 1) L
II
1.00
45·
U.4
411· a
(IF = 100mA) Po 6 mW
t Peak Emission Wavelength
=
(IF 100mA) Ap 935 945 955 nm
Spectral Shift with Temperature .28 rimtc
t Spectral Bandwidth - 50% & 60 nm
1. Measured from maximum diameter
t Half Intensity Beam Angle of device.
1N6264 OHI 20 deg 2. Leads having max. diameter .021"
1N626S °HI 80 deg (.533mm) measured in gaging plane
.054" + .001" - .000 (137 + 025 -
Rise Time - 0-90% of Output tr 1.0 J.l.s OOOmm) below the reference plane of
. Fall Time - 100-10% of Output tr 1.0 IJ.S the device shall be within .007"
(.778mm) their true position relative
Nota 1: to a maximum width tab.
Total power output, Po, is the total power radiated by the device into a solid angle 3. From centerline tab.
of 2 7r steradians.
t In:dicates JEDEC registered values.
164
(1 N6264 - 1N6265 \
TYPICAL CHARACTERISTICS
100 IA
'" '"
50
r--.....
20
10 ~ ~'i~~s : ""-
FoRwARD
CURRENT
L- - ;TINUDUS
RWARD
URRENT
I:'i 0.'
e '" .......
""-
0.05
O. I
~
NORMALIZ ED
IF"IOOOlA
TA-2S-C
~ 0..
Io
Z
I
I! 0.4
0.2
NORMALIZEO TO
I .. oIOOOlA
TAO 25°C
" '" " "-
0.02
~'1 o
0.01
.001 .002 .oos .01 .02
rF'" FORWARD
.os 0.1 0.2
CURRENT-AMPERES
Q!i 1.0 2 5 10 -50 -25 0 25 50 7S
TA-AMIIENT TEMPERATURE-oC
100 125 150
1. POWER OUTPUT VS. INPUT CURRENT 2. POWER OUTPUT VS. TEMPERATURE
10 100
-
8.0
.0
--
6.0 ./
4.0
.- ~ ...
.0
40
/'
./
~
./
, ./
5 2.0 c
7' / ,/
r
~ 1.0
/
~
V r
J / / /
If
20
I o.e 3
Ii 0.' iI
i 0.4
/ ..
Ii
olOOOC
foc
/-WC
.iB 0.2
I
c
c
:0
U
10
I -
f
I..
O. I
.08
/ 0
c
I2 4
6
1
I
I I
1
I
H .08 I
II.
I I 7
.04
H
2
/ I
.02
2 3 4 5 6
'iF- FORWARD VOLTASF -VOLTS
7 8
• 10 ..
I
/
1.0
v,-
! 7 1.1 1.2
'OIlWARD VOLTASE -VOLTS
1.1 1.4 III
3. FORWARD VOLTAGE VS. FORWARD CURRENT 4. FORWARD VOLTAGE VS. FORWARD CURRENT
100 100
10
I~ 10
J
V "\
~
........
Ii
c
.0
...
u
r
~
c
I
60 II \
.0 \
I
i i...
..8
1 !\
~
&
:>
~ 40 40
~....
..
I/
~
..
....
c
c
20 20
\
J ~.
40 30 20 10 0
I-ANGULAR DISPLACEMENT FROM OPTICAL AXIS-DEGREES
5. 1N6264 - TYPICAL RADIATION PATTERN

10 20 30 40 50
o
-'/
10 60 40 20 0
. - ANGULAR DISPLACEMENT 'IIOM OPTJCAL AXIS - DEGREES
6. 1N6265 - TYPICAL RADIATION PATTERN

20 ~ 60
" 10
....
165
SOLID STATE
@D co ELECTRONICS
Infrared Emitter
• -14+1 lN6266
Gallium Arsenide Infrared - Emitting Diode
The General Electric 1N6266 is a gallium-arsenide, infrared emitting
INCHES MWMETEI!S
diode which emits non-coherent, infrared energy with a peak wave- SYMBOl. MIN. MAX. MIN. MAX. NOTES
length of 940 nanometers. This device is characterized to precisely A .255 &47
.021
"
.0Ml .407 .533
derme the infrared beam along the mechanic.al axis' of the deVice. _0 .209 .230 5.31 5.84
,01 ,180 .187 4.57 4.77
absolute maximum ratings: (TA =2SoC unless otherwise specified) •OJ . IOOHOM. 2.54NOM. 2
.-
.050HOM. 1.27NOM . 2
Voltages
h
I
k
.031
.038
I .0110
.044 .79
.92 1· a
7
1.11
1.16 I
"'Reverse Voltage
Currents
VR 3 Volts
..
L 1.00
4.,.
?~~
4~ S
"'Forward Current (Continuous)

"'Forward Current (pw 1 psec 200Hz)
IF
IF
100
10
rnA
A o38
ANODE
0I
CATHODE
Dissipation . (CONNECTED
TO CASEI
"'Power DiSsipation (TA = 25°C) t PT 170 mWatts
Power Dissipation (Tc = 25°C) ti PT 1.3 Watts 1. Measured from maximum diameter
Temperatures of device.
2 .. Leads having max. diameter .021"
"'Junction Temperature TJ -65 to +150 °c
(.533mm) measured in gaging plane
*Storage Temperature T STG -65 to +150 °c .054" + .001" - .000 (137 + 025 -
*Lead Soldering Time (1/16", 1.6mm, TL +260 °c OOOmm) below the reference plane of
from case for 10 sec.) the device shall be within .007"
tDerate 1.36mWrC above 25°C ambient. (. 778mml their true position relative
ttDerate lO.4mWrC above 25°C case. to a maximum width tab.
*Indicates JEDEC registered values. 3. From cent~rline tab.
MAXIMUM RATING CURVES
-
10 150
Ul
8
6
-
1"'-0
I"- - ~ ........
..... ~ 125
"\ -.......::::r- .... ... ~ r--....
'\
4
~,
'\
IIJ
IIJ
0: ........ ~ ~ iii
IIJ
CL ....... ...... ~
:E
~ 2 i'.. '- ~.s-~ ~:;>IOO
I-z
I
I\.
~
~ • .....s-
:1'1-
-'I
:t!
:t::> \ ~
\
~ 1.0 ~ 9!;( 75
~ 0.8 ciffi ~IOO%DUTY
~ 0.6
::>
~ 0.4
I\.
,.0.......I-.
11' . ~~
:E
iI-
IIJ 50
CYCLE
,
\ 10% D.C.
~
\%D.C.
...
... 0.2
"'.0
'6.o~~d'
....'"
~
" I
,!l 25
~ \ \
0.1
10 100 1000
1\
10,000 100,000
o
.01 .02 .04 .06 0.1 .2 .4.6 .8 1.0 2 4 6 810
f - FREQUENCY - HERTZ IF - INPUT CURRENT - AMP.ERES
MAXIMUM PULSE CAPABILITY MAXIMUM TEMPERATURE VS. INPUT CURRENT
166
1N6266
electrical characteristics: (TA = 25°C unless otherwise specified)
Static Characteristics SYMBOL MIN. TYP. MAX. UNITS
*Reverse Leakage Current IR 10 p.A
(VR = 3V)
*Forward Voltage VF 0.9 1.7 Volts
(IF = 100mA)
*Radiant Intensity Ie 25 mW/sr
(IF = 100mA, W = 0.01 Sr)
*Peak Emission Wavelength Ap 935 955 nm
(IF = 100mA)
Spectral Shift with Temperature .28 nmtC
*Spectral Bandwidth - 50% llA 60 nm
*Half Intensity Beam Angle 8H1 20 deg.
Rise Time tr 1.0 JJ,s
Fall Time tf 1.0 JJ,s
*Indicates JEDEC registered values.
Ie
INFRARED EMITTING DIODE RADIANT INTENSITY
The design of an Infrared Emittmg Diode {IRED)-photo- Radiant intensity provides an easy, accurate tQol to
detector system normally requires the designer to determine calculate the infrared power received by a photodetector
the minimum amount of infrared irradiance received by the located on the IRED axis. As the devices are selected for
photodetector, which then allows definition of the photo- beam characteristics, the calculated results are valid for
detector current. Prior to the introduction of the 1N6266, worst case analysis. For many applications a simple approxi-
the best method of estimating the photodetector received mation for photo detector irradiance is:
infrared was to geometrically proportion the piecewise inte- H e5 Ie/d2, in mw/cm 2
gration of the typical beam pattern with the specified mini- where d is the distance from the IRED to the detector
mum total power output of the IRED. However, due to in cm.
the inconsistencies of the IRED integral lenses and the beam
lobes, this procedure will not provide a valid estimation. IRED power output, and therefore Ie, depends on IRED
current. This variation (!J.Ie/!J.I) is documented in Figure 1,
The General Electric 1N6266 'now provides the designer and completes the approximation: H = Ie/d2 (!J.Ie/llI). This
specifications which precisely define the infrared beam normally gives a conservative value of irradiance. For more
along the device's mechanical axis. The 1N6266 is a pre- accurate results, the effect of precise angle viewed by the
mium device selected to give a minimum radiant intensity detector must be considered. This is documented in Figure
of 25 mW/steradian into the 0.01 steradians referenced by 2 (!J.Ie/llw) giVing:
the device's mechanical axis and seating plane. Radiant in-
tensity is the IRED beam power output, within a specified H = Ie/d2 (!J.Ie/!J.I) in mw/cm2 .
solid angle, per unit solid angle. For worst case designs, temperature coefficients and toler-
A quick review of geometry indicates that a steradian ances must also be considered.
is a unit of solid angle, referenced to the center of a sphere, The minimum output current of the detector (Id can
defined by 41T times the ratio of the area projected by the be determined for a given distance (d) of the detector
solid angle to the area of the sphere. The solid angle is from the IRED.
equal to. the . projected area divided by the squared radius.
Steradians = 41T A/41TR2 = A/R2 = w. or
As the projected area has a circular periphery, a geometric IL = (S)H = (S) (Ie/d2) (!J.Ie/llw) (!J.Ie/llI)
integration will solve to show the relationship of the Car-
where S is the sensitivity of the detector in terms of out-
tesian angle (a) of the cone, (from the center of the sphere)
put current per unit irradiance from a GaAs source.
to the projected area.
w = 21T (1-COS %).
167
1N6266 IRED RADIANT INTENSITY SPECIFICATION CONCEPT
---7----- -.....
/' ,...' I ., "
......... MATCHING A PHOTOTRANSISTOR WITH 1N6266
,/
,//'
, Assume a system requiring a lOrnA IL at an IRED to
/ I , . detector spacing of 2cm (seating plane to seating
,/ I '\\ plane), with bias conditions at specification points.
I / / IRED SEATING PLANE \\ Given: dt=2cm; IL I = lOrnA min.; Ie = 25mW/Steradian

/ I \ AREA "A" Then: HI E!:! Ie/D t 2 = 25/(2)2 = 6.25 mW/~2 •
l
'I
\ .:~"'~_ \
SPHERE
Centered On
IRED Axis
(
~i----
=r- ~..
j-C/L
\ RECEIVES
\ POWER "Pw"
Detector Evaluation:
TYPE
ILMIN.
mA
@ H CTungsten) E!:! HCGaAs)
mw/cm 2 mw/cm2
SCGaAsI
mA/mw/cm'
L14G1 6 10 3 2
L14G2 3 10 3 1
\ \ I
\\ \ /!
Calculated IL = d 1 is:
, I L14G1 (S). H t = (2) 6.25 = 12.5 rnA
'
"", \ I
= (1) 6.25 = 6.25 rnA
\ //
/ L14G2 (S) H t
..... -..\.
Since the system requires an IL of 10 rnA minimum the
"'" . -------//'/'//
correct device to use is the L14G 1.
W" AId" = 211' C1-COS~) Steradians
.2
I. = Pw/w mW/Steradlan
H = Pw/A = le/d" mW/cm" TYPICAL CHARACTERISTICS
100 1.4
IIII A I I I I II "AREA A
60
40 .,- -r2 -------- --
~
>- ~ cr
~20
~ 10 ./
./
iii
Z
LLI
1.2
r-- ~
r-
., • 2". (1- COS 2 \
t- 1.0 cr
~ 6 ~ ............. r
4
I- I-
Z ......
~ 2 ./
~ 0.8 "-
o ./ ~
~ 1.0 ~
o .6 :ilN 0.6
l!:l
""'
.4 NORMALIZED TO:
NORMALIZED TO: :::i f - - - I-
~ .2 ./ IF" 100mA ~
IF" 100mA
., •• 01 STERADIANS
::i
./ ., " .01 STERADIANS 0: 0.4
~
" '"
.10 o TA" 25°C
TA =. 25°C Z
Z .06 I
1 •• 04
~ 0.2
~
.02
.0I 0.1
.01 .02 .04 .06.08.1 .2 .4.6 .8 1.0 2 4 6 810 .001 .002 .004.006 .01 .02 .04 D6D8.1 STERADIANS -.,.6 .81.0
IF - INPUT CURRENT - AMPERES I I I I I I I I I I
2 3 4 5 7 10 15 20 DEGREES-cr 45 60
1. RADIANT INTENSITY VS. INPUT CURRENT 2. INTENSITY AND POWER VS. ANGLE
A le/AI A le/AW
10.0 100
--
8.0 80
6.0 III
III 4.0 ::! 60 ./ ./ ./
LLI LLI
./ V
----- ~ 40
0:
~ 2.0 /' ./ ./
::i
7 0.81.0 .,..V ~
..J
..J
./ V /
~ 0.6
::!0:
0.4
i
t-
~ 10
I
20
TA.IOOY 25Y -55°Y
:;)
o 0.2 I 8§ 8
:;)
o
0:
~ 0.1
0: .08
I o
o
"~
6
4 I
I
I
I
e .06 ~ I I II
I .04 ~ / /
I .2
.02 ~
)
V / /
I
2 3 4 5 6 7 8 9 10 .9 1.0 1.1 1.2 1.3 1.4 1.5
VF - FORWARD VOLTAGE - VOLTS VF - FORWARD VOLTAGE - VOLTS
3. FORWARD VOLTAGE VS. 4. FORWARD VOLTAGE VS.
FORWARD CURRENT FORWARD CURRENT
168
TYPICAL CHARACTERISTICS 1N6266
1.0
0.8
/
/
v""'\ ,
~
IE
l:IIt:
~
100
60
40
20
10
I-
NORMALIZED TO:
IF"OOmA
TA ' 25·C
OJ • • 01 STERADIANS
SILICON PHOTODIODE
I----
IF • 'A:::::::::~ AS DETECTOR ~
... III 6
~
e: 0.6
I \ o
o
is
4
~
o
III
I \ ~::E:
2
1.0
I
IF = 'OOmA
>
i=
~ 0.4
/ \ CL
o
III
.6
.4
III
It: II \ N
~ .2
~
0.2
) r\. 15
Z
.10
.06
IF'; lOrnA
/ "- i'-- ~
I .04
o
V .02
.0I
880 900 920 940 960 980 1000 1020 -50 -25 o 25 50 75 100 125 150
). - WAVELENGTH - NANOMETERS TA - AMBIENT TEMPERATURE - ·C
5. SPECTRAL OUTPUT 6. OUTPUT VS. TEMPERATURE
1.4 100.0
...
Z NORMALIZED TO IF =100 mA
III
It: 1.2 ~ D' 6em
It:
~
0 --... ............. "- DISTANCE MEASURED FROM SEATING PLANE -
TO SEATING PLANE
"
It:
::=t;D~
1.0
...
0
0 ~ ~ 10.0
III
..J
..J 0.8 i'-..... , iii
.!:?
"'" "
0
0 o I
III I"
0
III
N 0.6
............. !::!
..J
'\. , I F = IA. PULSED
'"~:I
" ............
:::i
'"
~
NORMALIZEO TO:
1.0
..... t--...
It:
0 0.4 I - - IF' 100 mA
- IN6266
z
z VeE' 5V LI4GI
I TA ' 25·C
==tD ~ ~"OOmA.DC
~ 0.2 1-,.0"-1 ~.
I
iii
...u
-50 -25 o 25 50 75
I I I
100 125 150
I
'0 5 10 15 20 25
T - TEMPERATURE - ·C D - em
7. OUTPUT VS. TEMPERATURE IRED/PHOTOTRANSISTOR PAIR S.IL VS. DISTANCE IRED/PHOTOTRANSISTOR PAIR
4.5 TO 6.5VDC
22
TYPICAL APPLICATION
D29E2 ,H 470 39K

'X:' IO}'f
2.2M
2N5249
if
I LOAD
I I TO
5mA
\ I
"......
1/2 HIIA5
- /
0.05 2N5249
1.2M
10
RI 2,N5249
1M 0.002
/ "-
f ---'V-- ~ \
\ ---'V-- 1.3K 22 --'V-+ I 2.7K 2.2K
\ / 22
__ IN626S DETECTOR __
-
DETECTOR SELECTION TRANSMISSION RANGE REFLECTIVE RANGE
L14Q1 12" 3"
L14G1 48" 12"
OBJECT DETECTOR FEATURING LOW POWER CONSUMPTION AND LONG-RANGE CAPABILITY.
169
SOLID STATE
-@ 0 . CO ELECTRONICS
Infrared Emitter
• . -'ASI FSD1, FSD2,IFSD3, FSE1, FSE2,FSE3
Gallium ~luminum Arsenide Infrared - Emitting Diode
The General Electric F5D and F5E Series are infrared emitting diodes. They
exhibit high power output and a typical peak wavelength of 880 nanometers.
They provide a significant increase in system efficiency. when used with
silicon detectors, compared to GaAs infr3!ed emitting diodes.
absolute maximum ratings: (25°C, unless otherwise specified)

F5Dl, F5D2,F5D3 f5E1, F5E2, F5E3
Voltage SYMBOL UNITS
Reverse Voltage VR 3 V
Current
Forward Current (continuous) IF 100 rnA
Forward Current (pw,.1 J.l.s; 200 Hz) IF 10 A
Forward Current (pw, 10J.l.s;100Hz) IF 3 A
Dissipation
Power Dissipation (TA = 25°C)* PT 170 mW
Power Dissipation (Tc = 25°C)** PT 1.3 W
Temperatures
Junction Temperature TJ -65 to +150 °c
Storage Temperature Tstg -65 to +150 °c
Lead, Soldering Time (1/16" TL +260 °c
[1.6mm] from case for 10 sec.)
*Detate 1.36mWrC above 25°C ambient.
**Derate lO.4mWrC above 25°C case.
electrical characteristics: (25°C, unless otherwise specified)
optical characteristics: (25°C, unless otherwise specified)

SYMBOL MIN. TYP. MAX. UNITS
Total Power Output
(IF = 100 rnA) (Note 1) - F5Dl, F5El p.
o 12 mW
- F5D2,F5E2 9 mW
Peak Emission Wavelength - F5D3, F5E3 10.5 mW
(IF = 100mA) 880 nm
170
(F5D1-3.F5E1-31
optical characteristics (continued): (25°C, unless otherwise specified)
Spectral Shift with Temperature .3 nmrC
Spectral Bandwidth - 50% ISA 80 nm
Half Intensity Beam Angle
F5Dl, F5D2, F5D3 8H1 20 Deg.
F5El,F5E2,F5E3 80 Deg.
Rise Time
0-90% of Output (Note 2) tr 1.5 p.s
Fall Time
100-10% of Output (Note 2) tf 1.5 p.s
NOTES:
1. Total power output, Po' is the total power radiated by the device into a solid angle of 2* steradians.
2. At IF = IOOmA, t r .. IOns input current pulse.
F5D1 - F5D2 - F5D3 F5E1 - F5E2 - F5E3
38
o
ANODE
- 0I
CATHODE
ICONNECTED
TO CASEI
INCHES MILLIMETERS INCHES MILLIMETERS

SYMBO' NOTES SYMBOL NOTES
-MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A - .255 - 6.47 A - .155 - 3.93
t/lb .016 .021 .407 .533 q,b .016 .021 .407 .533
q,D .209 .230 5.31 5.84 q,D .209 .230 5.31 5.84
q,D, .180 .187 4.57 4.77 q,D, .180 .187 4.57 4.77
e .100 NOM 2.54 NOM 2 e .100 NOM 2.54 NOM 2
e, .050 NOM 1.27 NOM 2 e, .050 NOM 1.27 NOM 2
h - .030 - .76 h - .030 - .76
j .031 .044 .79 1.11 j .031 .044 .79 1.11
k .036 .046 .92 1.16 1 k .036 .046 .92 1.16 1
L 1.00 - 25.4 - L 1.00 - 25.4 -
Ct 45° 45° 45° 45° 3 Ct 45° 45° 45° 45° 3
NOTES: NOTES:
1. Measured from maximum diameter of device. 1. Measured from maximum diameter of device.
2. Leads having maximum diameter .021" (.533mm) 2. Leads having maximum diameter .021" (.533mm)
measured in gauging plane .054" + .001" - .000 (137 measured in gauging plane .054" + .001" - .000 (137
+ 025 - OOOmm) below the reference plane of the + 025 - OOOmm) below the reference plane of the
device shall be within .007" (.778mm) their true posi· device shall be within .007" (.778mml their true posi-
tion relative to a maximum width tab. tion relative to a maximum width tab.
3. From centerline tab. .3. From centerline tab.
171
-I F5D1-3, F5E1-3!
10
v
...::> V
Go 1.0 /
.~ ./
a::
/
~
Q o.I
./
iii
N
:J NORMALIZED TO
ca: /io""
~
IF"IOOmA·
Z 0.0I V TA =25°C
I
PULSED INPUTS
o? /' Pw =ao,.sec
RR =30HJ
10 100 100C
If-INPUT CURRENT-mA
1. POWER OUTPUT VS. INPUT CURRENT
20
...
i...
aa::
10
8
6
4
f-- IF=IA
- - _. -r--..
~
~ 2
IF=100mA
'""-
--
Q
III
N I
~ 0.8
I
i
o?
I
0.6
0.4
NORMALIZED TO
IF"IOOmA. TA"25"C
--- ---- ..............
0.2 I-- PW" 80,...c. f " 30Hz
o
I l
25 50 75 100 125 150
.TA -AMBIENT TEMPERATURE-oc
2. POWER OUTPUT VS. TEMPERATURE
4
Pw c 80,.sec
F-30Hz
"- IF=IA
-
--
O.SA
.... 100mA
10mA
o 25 50 75
TA-AMBIENT TEMPERATURE-oC,
100 125
- 150
3. FORWARD VOLTAGE VS. TEMPERATURE
172
IF5D1-3, F5E1-31
100
I
/
V-
,
fJ ['.1\.
\
II -F5D r-,F5E
I
II \
~ - """ ~ i'
o Veo 60 40 --
20 0 ~O
)
40 60
8-DISPLACEMENT FROM OPTICAL AXIS-DEGREES
\.
"
~o I o
4. TYPICAL RADIATION PATTERN
100
~
I
I-
10 ~j
t--
E!f Ll4G 5V
F5DI
~
......
.--
Z
It! ~ /
!5 ./
..... / IN6264
o 1.0
~ ./ ./
~a ./
V ./
/'
TYPICAL OUTPUTS
:s} O.I V
./ AT A DISTANCE OF
10CM PULSED =
-
INPUTS, P.W. = 80,. •
./
RR • 30Hz -
V
100 1000
TF-INPUT CURRENT-mA
5. OUTPUT VS. INPUT WITH L 14G DETECTOR
120
- -Z .3.- ....
I-
z
~
100
~ ...
--~ -r- / \ ... ,
TYPICAL SPECTRAL
~ 80 f - - RESPONSE OF SILICON
I
II
, , ....
I- PHOTOSENSORS
~
r",
~~~,I
0.. TYPICAL
a
I-
60
1\ IN6264/
~
I \ IN6265
---
~...J 40 I \ / K
...
0:: IF=IOOmA II \ \
I r----
0..° 20
TA =25°C
/\ \
/ / \. \
/ /
700 800
'A.-WAVE LENGTH-nm
6. OUTPUT VS. WAVELENGTH

900
i'..
" 1000
173
SOUDSTATE·
@ D co ELECTRONICS
Infrared Emitter 2 r- --,
I
I
I
I
I
I
I
I
.• -'4+1 F5F1
I I
I ,
I I
.. -
: I
--'
Gallium Arsenide Infrared - Emitting Diode ~

-LL
' 0 Black
Color jlj'-L
.t- 'if"II
ET '. Codes b,
I +b T
The General Electric F5Fl is a Gallium-Arsenide, infrared emitting diode ..., G SECTION x-x
which emits non-coherent, infrared energy with a peak wavelength of 940

nanometers. It is packaged in a clear side looking, epoxy encapsulant,
T PLANE
~fl
absolute maximum ratings: (25°C) (unless otberwise specified)
VOLTAGES
Reverse Voltage
S Y M B O L ' UNITS
VR 6 V I . 2
JL
CURRENT
SVM :Jiklfs INCHES NOTES
MIN MAX MIN MAX
Forward Current A 5.59 5.80 ,220 .228
(Peak, pw = l#,s, PRR :::; 300pps) IF 3 A 8 1.78 NOM, ,070 NOM 2
¢b .60 .75 ,024 .030 1
DISSIPATION bl .51 NOM, .020 NOM 1
Power Dissipation *
0 4.45 4.70 :175 ,185
PT 100 mW E 2.41 2.67 ,095 .105
El .58 .69 .023 .027
TEMPERATURES
Junction Thmperature TJ -55to +100 °C
• 2.41 2.67 ,095 .105 3
G 1.98 NOM. ,078 NOM
Storage Thmperature TSTG -55to +100 °C L 12.7 - .500 -

Ll 1.40 1.65 ,055 .065
, Lead Soldering Temperature TL 260 °C S .83 .94 .033 .037 3
(5 seconds maximum, 1.6mm from case)
NOTES:
*Derate 1,33mW/oC above 25°C ambient 1, Two leads. Lead crOIS section dimensions uncon·
!rolled Within 1.27 MM (,050") of '"ting plana.
2. Centerline of active element located within .25 MM
t010") of true position.
3. As measured at the seating plane.
4. Inch dimensions derived from millimeter•.
electrical characteristics: (25°C)

Reverse Breakdown Voltage, IR = lO#,A V(BR)R 6 V
Forward Voltage, IF = 60rnA VF 1.5 1.7 V
Reverse Leakage Current, V R = 5V IR 100 nA
Capacitance, V = 0, f = 1MHz Cj 30 pF
optical characteristics:
Radiant Intensity, IF = 20rnA, w = 0.06srt Ie 0.28 mW/sr
Peak Emission Wavelength, IF = 60mA ~ 935 955 nm
Spectral Bandwidth - 50% 6-" 60 nm
Half Intensity Beam Angle 8HI 30 deg.
tIe measured with a 0 .45cm aperture placed 1. 6cm from the tip of the lens, on the lens center line perpendicular to the plane
of the leads.
174
40 ~~---~
100
I
/ IF=IOOOmA
>- 10
.....
m
z
UJ
..... NORMALIZED TO
/
./
/
500~
-
----
-
IF 20mA, TA=25°C 100mA
~
f-
Z
PULSED-
I- PW=100/!-s .PRR=IO~ / .....
Z
<1
50mA
<1
15 S 20mA
<1
tr
V <1
tr
1
lOrnA
0
/ o
W
W
r---
--r------
N
:J
<1
./ N
:J
5mA
::!:
tr
0
V ~
tr
o
.I
NORMALIZED TO ~A
Z Z
I I F =20mA, TA=25°C
.01 I
~
•003
- '"
.01
PUL.:SED - PW= lO0f'-s,
PRR =100 pps w=0.06 Sr•
1 10 100 1000 -55 -~ 0 ~ ~ n 100

IF - INPUT CURRENT - rnA TA - AMBIENT TEMPERATURE - ° C
1. RADIANT INTENSITY VS. INPUT CURRENT 2. RADIANT INTENSITY VS. TEMPERATURE
100
~
f-
Z
NORMALIZED TO
'" UJ
~
tr
!:J VR = 5V
o ~ tr
:::>
-r----- -
> u TA = 25°C
r--.... -.............. UJl0
-----
~IF=IOOOmA
'"><
<1
"-.1--- r-- I-
- <1
UJ
-' v---
~
IF PULSED t-- o
o I--- PW=I00f'-s 500mA UJ
tr
~
tr
PRR =100pps r---t---- C::!
;;:,
:::;:
o tr
....
L1.
I--- o
z
> ~ ~ 60
I
20;;'A 10mA ~A
I .I
-55 -25 0 25 50 75 100 25 50 75 100
TA - AMBIENT TEMPERATURE - °C TA - AMBIENT TEMPERATURE - °C
3. FORWARD VOLTAGE VS. TEMPERATURE 4. LEAKAGE CURRENT VS. TEMPERATURE
1.0
/-', "\
100
.8
/ "\
-
f- 80
/\
/
z
w
(fj
Z
~ .6
SILlCO'll
f-- DETECTOR
Ll4~XP~~~;~~~SISTOR II·
/1 \
\
w
u
a::
w
Cl.
160 \
\
LI4R PHOTO OAIILIN8TO~ f-
:::>
II
CI)
w
a: " '- 'Cl.
.....
:::>
~ ~
V/ F5F- .....
\ o
w 40
II
....... / \
j:
« ; \ j2;
!;i
-'
w
a: .2 \ -'
w
a:: 20
\
\
\
~
U \..--I---
o
500 600 700
). - WAVE
800 900
LENGTH - NANOMETERS
5. SPECTRAL RESPONSE
1000 1100
oV
100 80 60 40 20 0 20
9 - DISPLACEMENT FROM OPTICAL AXIS- DEGREES
6. TYPICAL RADIATION PATTERN
40 60
'"
80 100
175
SOLID STATE
@ D CO ELECTRONICS
Infrared Emitter z -,
• -'%' F5G1
Gallium Aluminum Arsenide Infrared - Emitting Diode --'
I
I
I
I
I
I
i
I
~
The General Electric F5Gl is a Gallium-Aluminum-Arsenide, .l.1.
~
Green
infrared emitting diode which emits non-coherent, infrared energy ET • Color --L
bl
with a peak wavelength of 880 nanometers. This device will provide -16 Code .b T
SECTION x-x
a significant increase in system efficiency, when used with silicon 11( LEAD PIIOI'IL[
ft- 1
detectors, compared to GaAs infrared emitting diodes. It is encap -
sulated in a clear side looking, epoxy package with an integral
JJ.l J
recessed lens. T PLANE
x
absolute maximum ratings: (25 C) unless otherwise specified
0 L X
VOLTAGES SYMBOL UNITS

I 2
CURRENT SVM :J·'r~t INCHES NOTES
MIN MAX MIN MAX
A 5.59 5.80 .220 .228
Forward Current B 1.78 NOM. .070 NOM 2
(Peak, pw = 1 p,s, PRR:S 300 pps) IF 2 A 9b .60 .75 .024' .030 1
bl .51 NOM. .020 ~M 1
DISSIPATION a 4.45 4.70 .1'75 .185
E 2.41 2.67 .095 .105
Power Dissipation· PT 100 mW El .58 .69 .023 .027
TEMPERATURES • 2.41 2.67 .095 .105 3

G 1.98 NOM. .078 NOM
Junction Temperature TJ -55 to +100 °C L 12.7 - .500 -
Ll 1.40 1.65 .055 .065
Storage Temperature TSTG -55 to +100 °C S .83 .94 .033 .037 3
~ad Soldering Temperature TL 260 °C
NOTES:
(5 seconds n;taximum, 1.6mm from case) 1. Two Iuds. Lnd crOll section dimensions uncon·
.rollod within 1.27 MM (,050"1 of _.i", plan••
·Derate 1.33mW;oCabove 25°C ambient 2. . Centerline of active element locat.. within .25 MM
(,010") of true position.
3. As mHSured at the _ting plane.
4. Inch dimensions derived from millimeter••
electrical characteristics: (25 0 C)

SYMBOL MIN. I TYP. MAX. UNITS
Reverse Breakdown Voltage (lR =10 p,A) V(BR)R 6 - - V

Forward Voltage, IF =60mA (pulsed) VF - 1.5 1.85 V
IF =20mA VF - - 1.7 V
Reverse Leakage Current, VR =5V IR - - 100 nA
Capacitance, V =0, f = 1MHz Ci - 30 - pF
optical characteristics:
Radiant Intensity, IF = 20mA, w = 0.06srt Ie 0.6 - - mWjsr
Peak Emission Wavelength, IF = 20mA i\.p 880 nm
Spectral Bandwidth - 50% Ai\. 50 nm
Half Intensity Beam Angle OHI 35 deg,
tIe measured with a 0.45cm aperture placed 1.6cm from the tip of the lens, on the lens center line perpendicular to the plane of
the leads.
176
80 100
.c:;
IF = l000mA (pulsed)
-
NORMALIZED TO:
IF = 20mA, W = 0.06 STE RADIANS, T A = 2S·C
.'" SOOmA (pulse,1I
>-
10 '" >-
l-
e;;
l- zw 10
e;; I-
Z ,,;
w ~ l00mA (pulsed)
I-
~
I-
,," f--
Z
«
Z 0
« «
a: 20mA
0
« i-" 0
a; w
0 .1 L N
w ::i
N
./
«
:;:
::i a:: SmA
«
:;: / 0
a: Z .1
0 ~ I
z .01 2mA
I -"
-" r-NORMALIZEDI TO:
:/ I--IF = 20mA
TA = 25·C
001 / .01
0.1 10 100 1000 2000
-25 o 25 50 7S 100
TA - AMBIENT TEMPERATURE _·C
IF - INPUT CURRENT - rnA
1. RADIANT INTENSITY VS.INPUT CURRENT 2. RADIANT INTENSITY VS. TEMPERATURE

100
U)
4
r---- IF lOOOmA
f--
Z
w
a::
a:
-NORMALIZED TO:
-VR = 3V
_TA = 25·C
..........
-- - -
I-
..J :>
<.> 10 ~
0
3 '-
>I w
-
(!J
w SOOmA «
(!J ><
« «
I-
..J
w
..J ,..,......
0
>
0
a:
«
3:
a:
- l00mA
lOrnA
0
w
N
::i
«
:;:
a::
~
0 0
u. _ I F PULSED Z
I I
"- pw = 300"S
> PRR =11PPS .!!-
.1
o o 25 50 100 2S 50 75 100
-2S 7S
TA - AMBIENT TEMPERATURE _·c TA - AMBIENT TEMPERATURE _·C
3. FORWARD VOLTAGE VS. TEMPERATURE 4. LEAKAGE CURRENT VS. TEMPERATURE

100
1.0 ."".
·f\
0.8
TYPICAL SILICON DHFr.TnR
(EXAMPLES: LI4Ql, LI4Rl) ;I
/
F5G"~ '\
\
80
,... I\
/
I \
f--
Z
w
<.>
l/ \ a::
w
U)
Z
0.6
./ I w
0..
60
0
'.
I
I \
0..
U)
W ,,/ f--
::::>
a: 0..
I-
w
>
i=
k/ J \ ::::>
o
« 0.4 \. w 40
/ -, >
I \
..J
w
a::
"" J i=
«
..J
0.2
I \ \, w
a:
20 ~
o
SOD 600 700
I
BOO
I
900
\
.
1000 1100
o
100
V ~
80 60
J 40 20 20 o 40 60
\.. ~
i'--.
BO 100
~ - WAVE LENGTH - NANOMETERS o- DISPLACEMENT FROM OPTICAL AXIS - DEGREES
5. SPECTRAL RESPONSE 6. TYPICAL RADIATION PATTERN
177
~ID~IAIE
@D co ELECTRONICS
Infrared Emitter
.--''*' LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F
Gallium Arsenide Infrared-Emitting Diode
The General Electric LEDSSB·LEDSSC·LEDS6 Series are gallium arsenide,
light emitting diodes which emit non-coherent, infrared energy with a peak wave
length of 940 nanometers. They are ideally suited for use with silicon detectors.
The "F" versions of these devices have flat lens caps.
absolute maximum ratings: (25°C unless otherwise sp.ecified) LED55B, LED55C, LED56
Voltage:
INCHES MIlLIMETERS
Reverse Voltage VR 3 volts SYMBOL MIN. MAX. MIN. MAX. NOTES
A .2lili 6.47
Currents:
Forward Current Continuous IF 100 rnA
,0"
tlDl
.011
,180
:021
.209 ·230
.187
.407
iIo3l
4.57
.533
5.114
4.77
Forward Current (pw lilsec 200 Hz) IF 10 A • •100NOM. 2.!I4NOII. ?
.000NOM. 1.27_. 2
Dissipations: "
h
I .031
1..044
030 .79
1· 7
1.11
Power Dissipation (TA = 2S°C)* PT 170 mW k .036 ,046 .92 e
I.le I
Power Dissipation (Tc =2S 0 C)** PT 1.3 W L
II
1.00 2!5J4
4So 3
4"
Temperatures:
Juriction. Temperature TJ ·6SoC to +1 50°C
Storage Temperature T STG ·6SoC to +1 50°C
Lead Soldering Time 10 seconds at 260°C
."Derate 1.36 mW/oC above 25°C a~bient.
"Derate 10.4 mW/oC above 25°C case.
electrical characteristics: (25°C unless Qtherwise specified)

MIN. TYP. MAX. UNITS
-
LED55BF LED55CF LED56F
Reverse Leakage Current
(VR = 3V) IR 10 IJ-A sntn. INCHES
MIN. r::ur~ NOTES
Forward Voltage A
.011
.155 ! 3.93
(IF = 10OmA) VF 1.4 1.7 V "Ie
tID!
.2b9
.180 .187
.021
.230
•407
lUI
U1
1,533
r..a4
4.11
• 2.14_. 2
1':'
• 100_.
optical characteristics: (25°C unless otherwise specified) 1.21NDIt 2
"h
I •. 051 .044 \ .•78
.79 1.11
Total Power OutRut (note 1) k .036 .046 .92 1.16 I
(IF = 100mA)
LEDSSB·LEDSSBF Po 3.5 mW
..
L 1.00
45"
25,4
45° S
LEDSSC·LEDSSCF 5.4 mW
LEDS6 ·LEDS6F 1.5 mW ANODE CATHOOE
{CONNECTED
Peak Emission Wavelength TO CASEI
(IF =100mA) . 940 run
Spectral Shift with Temperature .28 nmtC of device.
Spectral Bandwidth SO% 60 nm 2. Leads having max. diameter .021"
(.533mm) measured in gaging plane
Rise Time 0·90% of Output 1.0 Ilsec .054" + .001" - .000 (137 + 025 -
OOOmm) below the reference plane of
Fall Time 100·10% of Output 1.0 Ilsec the device shall be within .007"
Note 1: Total power output, PO, is the total power radiated by the device into (.178mm) their true position relative
a solid angle of 2 1f steradians. to a maximum width tab.
3. From centerline tab.
178
TYPICAL CHARACTERISTICS ILED658,C, LED56, LED558F, LED65CF, LED56Fl ; .
100 1.4
'""
50
20 1.2
~
PULSEDPW ""-
10 80"SEC
FORWARD
CURRENT 5 1.0 ~
~ I'....
5
~
I
a:
~
r
CONTINUOUS
ffi
;J 0.8
~ 1.0
-f- FORWARD
CURRENT ~
"
'" '"
~ Ii!N
~
..
:J
0.5
.
:J 0.6
:E
a:
NORMALIZ ED o
z 0.2 z
~ /V
IF"'OOmA
TA-25·C I
,p 0.4 NORMALIZED TO
r--...
O. I
IF"OOmA
TA' 25"C
""-
0.05
0.2
0.02
0.0I
)1 o
.001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 5 10 -50 -25 0 25 50 75 100 125 150
IF- FORWARD CURRENT-AMPERES TA-AMBIENT TEMPERATURE-'C
1. POWER OUTPUT VS.INPUT CURRENT 2. POWER OUTPUT VS. TEMPERATURE

10 100
8.0
- -
80
6.0
60
L L
-
4.0
r- .." ./ ../
/' V
~ 40
:
a:
2.0 /" / /
~ /' / /
~ 1.0
".- /
f·c I-wc
20
I 0.8
!z... 0.6
;"OO"C
~ 0.4
a / 10
Q
; 0.2
I 8 1
/ Q 6 I I I
a: II: I I
~ O. I ~ I I
~
.
I....08 4
H .06 I I I :1
.04
H
2
/ /
I
.02
I
2 3 4 5 6
VF- FORWARD VOLTAGE -VOLTS
7 9 10
I
.9
/
1.0 1.1
/
1.2
VF- FORWARD VOLTAGE -VDLTS
1.3 1.4
3. LED 558, 55C, 56, 558F, 55CF, 56F FORWARD 4. FORWARD VOLTAGE VS.
VOL TAGE VS. FORWARD CURRENT FORWARD CURRENT
100 100
80
(~ 80
/
V "\
~
I-
...
Z
U
...
II:
0. 60 60 II \
!l \
I
I-
::>
1 1\
.0.
I-
::>
Q
...> 40 40
/
~.J
...a:
20 20
V \
40 30 20 10
)
a 10 20
1\ 30
'-ANGULAR DISPLACEMENT FROM OPTICAL AXIS-DEGREES
40 50
o
, V
80 60 40 20 a 20 40 60
'--... 1-0..
80
. - ANGULAR OISPLACEMENT FROM OPTICAL AXIS - DEGREES
5. LED 558, 55C, 56 6. LED 558F, 55CF, 56F

TYPICAL RADIATION PATTERN TYPICAL RADIATION PATTERN
179
~IU~IAIt:.
@O co ELECTRONICS
Light Detector Planar Silicon Photo Transistor
. 44+1. -'4+1 L14C1-L14C2
The General Electric L14C1 and L14C2 are NPN Silicon Phototransistors in a TO-IS style
hermetically sealed package. The device has a top-looking flat lens which is thus ideally suited
to optoelectronic sensing applications where external optics are being used. Generally only the
collector and emitter leads are used; a base lead is provided, however, to control sensitivity and
gain of the device.
absolute maximum ratings: (25°C) unless otherwise specified
Voltages - Dark Characteristics L14C1 L14C2
Collector to Emitter Voltage V ~EO 50 50 volts
Collector to Base Voltage VCEO 50 50 volts
(COLLECTOR
Emitter to Base Voltage VBBO 7 7 volts CONNECTED
Currents
Light Current 50 rnA
.0\(3)
TO CASE)
B(2)~
Dissipations
E(1)
Power Dissipation (TA = 25°C)* 300 mW
Power D~ssipation (Tc = 25°C)** 600 mW
Temperatures
Junction Temperature -65 to 150°C
Storage Temperature -65 to 150 °C INCHES MI LLiMETERS OTES
SYMBOL
Lead Soldering Time 10 Seconds at 260°C A
MIN. MAX. MIN. MAX.
210 5.34
I1>b . 16 .021 ,q.Q6 .54
*Demte 2.4 mW/OC above 25°C ambient **Demte 4.8 mW/oC above 25°C case
.2~tI=
11>0 5.3~ 5.85
11>[, . 78 4.52 4.96
electrical characteristics: (25°C) unless otherwise specified e
... IDe
50
5 OM
1.27 OM 2
h .03 .76
L14C1 L14C2 I .0 6 . .91 1.1
STATIC CHARACTERISTICS MIN. MAX. MIN. MAX. L .500 12.7
.22 1
a 45" 4SO 45" 45" 3
Light Current NOTES:
(VCE = 5Y, Ee = lOmwicm2) IL 1.0 0.5 rnA 1. Measured from maximum diameier of device.
2. Leads having maximum diameler . 021"
(VCE = 5Y, Ee = 2OmW/cm2) (.533mm' measured in gauging plane.054"
1.0 rnA +.001' -.000 (137 +.025-.o00mml below
Ihe reference plane ·of lhe device shall be
Dark Current within .007"(.778mml.lheir Irue posilion
(VCE = 20Y, Ee =:0 0) ID 100 100 nA relative 10 maximum width tab.
Emitter-Base Breakdown Voltage
(IE = 1oo",A, ~ = 0', Ee =:0 0) V(BR)EBO 7 7 V
Collector-Base Breakdown Voltage
(Ie = 1oo",A, IE = 0, Ee =:0 0) V(BR)CBO 50 50 V
Collector-Emitter Breakdown Voltage
(Ie = lOrnA, Ee =:0 0 V(BR)CEO 50 50 V
Pulse Width :s 3OO",sec,
Duty Cycle:s 1 %)
Saturation Voltage
<Ie = O.4mA, Ee = 20mW/cm2) VCE(SAT) 0.2 0.2 V
SWITCHING·CHARACTERI~TICS TYP.
Switching Speeds
(Vcc = lOY, IL = 2rnA, RL = 1000)
Turn-On Time t on(= 'If + lr) 5 ",sec
Turn-Off Time ioff( = Is + If) 5 ",sec
E.= Radiation Flux Density. Radiation source is an unfiltered tungsten filament bulb at 2870 K color temperature.
0
Note: A GaAs sourceof3.OmW/cm' is approxiamately equivalent to a tungsten source, at 2870 oK, <?f lOmW/cm,.
180
TYPICAL ELECTRICAL CHARACTERISTICS
10.
10.
I I .
z
Ea' 2QmW/cl!!! ~
a:
IEe=IQmW/~ r-
-- Io- l-
I--
1 ~
:;;)
c..\.
1.0 v
177
7
17/ ...-
-- Ee' 5mW/cm 2 -
Ee-imw/cm~
r- III
::::;
..,
Q
V
..,o !::!
oJ
N
::i
/
/
~
~. o. I
'/ NQRMALIZED 10
~Q.1
DO z VCE '5V
o 'oJ i.,;I"
Z rTJ H Ee·10.mW/cm2
,
7'
- ...I rJ '/ NQRlI ALiZED TO
VeE; 5v
r- [..7
./
.D. llf! fe = ;QmW/Cj2

.01 ./
0..1 to. 10. 10.0. 0.1 1.0 10 100
VCE - CQLLECTQR TO. E.MITTER VQLTAGE-VQLTS
Ee'TQTAL IRRADIANCE IN mW/cm2
LIGHT CURRENT VS COLLECTOR TO EMITTER VOLTAGE NORMALIZED LIGHT CURRENT VS RADIATION
10.0.0.
./ I"'---..
«
10.0.
./
V r---.... F::::::: l"'- f-.
~ r-... - t-- I-RL~IKG
'" "
:::I..
I 10
..,t-
Z / .......
DO
a
DO
1.0
/'
/ ~
.......
...... ~
r-.... . r.........
'" ........ ~
a:
«
'f O. I
V
/ -
_
NQRMALIZED TO
VCE =IQVQLTS
...........
............
r-.....
r-- ..... r--,
....o VCE=2QV
i""'- RL =IQQG "--+-
.0.
IV
/ Ee~Qmwicm2
~
'CEO'2mA
'en = 'off =5,.S8O
. . . 1--.
RL =IQG
I
RL -IOOG
I .1
I I I
25 50 75 100 125 150 1.0. 10. 10.0.
T-TEMPERATURE-OC ICEQ- OUTPUT CURRENT - mA
DARK CURRENT VS TEMPERATURE SWITCHING TIMES VS OUTPUT CURRENT
to. 130.
0..9
)r 7'\ II
I \ 120.
/ ""' \
./'"
\
/ I I\! 'wIN6264-IN626E 110
I V \
0..8
0..7
/ r ,,'\.I t- 90
z
10.0
"
. \:jQ.6
L14C~ /
,! \1 1\ ..,~a: 80.
/ ~ :~
,
;z CL
o I 70.
...8; 0.5
t-
V (, I \ :>
CL
t-
60.
..,a: 0..4
>
!;i 0..3
~ I
, \
\ ,
I
\
:>
0
~ 40.
~
50.
.., \, «
,
..J
I I \ \ ..J 30
DO 0.2 W
a: / 1\
0.1
F5D/E_I!
"I
\\ 20.
10.
17
I
o J \\ 7 I\: --
500 600. 700 80.0 900. 100.0. liDO. -80. -60 -40. -20. 0. +20. +40. +60. +80.
). - WAVE LENGTH - NANQMETERS
8-ANGULAR DISPLACEMENT FROM QPTICAL AXIS-DEGREES
SPECTRAL RESPONSE' ANGULAR RESPONSE CURVE
181
SCl..IDSTATE
@ D co ELECTRONICS
Light Detector Planar Silicon Photo-Darlington Amplifier
'%'. . -'%' L14Fl, L14F2
The General Electric L14FI and L14F2 are supersensitive NPN Planar Silicon
Photodarlington Amplifiers. For many applications, only the collector and
emitter leads are used; however, a base lead is provided to control-sensitivity
and the gain of the device. The L14FI - L14F2 area TO-18 Style hermeti-
cally sealed packages with lens cap and are designed to be used in opto-
electronic sensing applications requiring very high sensitivity.
COLL1!CTOR
absolute maximum ratings: (25°C) (unless otherwise. specified) CO~NEeTEO
TO CASE
VOLTAGES - DARK CHARACTERISTICS
Collector to Emitter Voltage VCEO 25 volts
Collector to Base Voltage VCBO 25 volts
28
Emitter to Base Voltage VEBO 12 volts
CURRENTS
Ught Current IL 200 rnA IE
DISSIPATIONS ILLIM TERS OTES

MIN. MAX.
Power Dissipation (TA = 25°C)* PT 300 mW M7
Power Dissipation (Tc = 25°C)** PT 600 mW
TEMPERATURES NM
.7
Junction Temperature -55 to ISO dC Z I
Storage Temperature -65 to ISO °c :500'- 12.7
cz 4" 45" 45" 45"
Lead Soldering Time 10 Seconds at 260°C NOTES:
*Derate 2.4 mW/oc' above 2S~C ambient. 1. Measured from maximum diameter of device.
**Derate 4.8 mW/oC above 2S C case. 2. Leads having maximum diameter. 021"
1.533mml measured in gouging plane.054"
+.001" -.000 (137 + .025-.000mm) below·
r--------------------------~-----------
the reference plane of the device shall be
electrical characteristics: (25°C) (unless otherwise sp'ecified) w~hin .007 "L778 mm) their true position
relative to maximum width tab.
L14F1 L14F2 3. From centerline tab.
STATIC CHARACTERISTICS MIN. MAX. MIN. MAX.
LIGHT CURRENT
(VCE = 5V, Ht = 0.2 mW/cm2 ) IL 3 I rnA
DARK CURRENT
(VCE = 12V, IB = 0) In 100 100 nA
EMITTER·BASE BREAKDOWN VOLTAGE
(IE = 100 J,LA) V(BR)EBO 12 12 V
COLLECTOR-BASE BREAKDOWN VOLTAGE
(Ic = 100J,LA) V(BR)CBO 25 ..:. 25 V
COLLECTOR·EMITTER BREAKDOWN VOLTAGE
(Ic = lOrnA) V(BR)CEO 25 25 V
SWITCHING CHARACTERISTICS (see Switching Circuit)
SWITCHING SPEEDS
(VCC = 10V, IL = 10 rnA, RL = 100 n)
DELAY TIME td 50 50 J,Lsec
RISE TIME tr 300 300 J.Lsec
STORAGE TIME ts 10 10 J.Lsec
FALL TIME tf 250 250 J.lsec
tH =Radiation Flux Density. Radiation source is an unilltered tungsten filament bulb at 28700 K color temperature.
NOTE: The 28700 K radiation is 25 1% effective on the photodarlington; i.e., a GaAs source of 0.05 mW/cm2 is equivalent to this
0.2 mW/cm2 tungsten source.
182
TYPICAL ELECTRICAL CHARACTERISTICS L 14F1·L14F2
100 10
5.0mW/em2 8 ....
I-
.... ~ I-
z
IIJ
6
4
,.
Z
IIJ
It:
/' 2.0
....,
It:
It:
:::)
0 2
/'
,/
It:
:::)
o 10 /' 1.0 I-
:z:
(!) 1.0
.8
./
I- L'" :::i /'
:z: .5 .6
(!) ,/ IIJ
> .4 ./
:::i
o
/'
r"'"
~...J /
IIJ .2 -'"
------
IIJ .2
!::!
...J
~ 1.0
.I
It:
.
0
I
0.1
.08
/ VeE' 5V
It: /' It)
.06 / H· = .2mW/em 2
o N
Z
.05 -'" ~ .04 V
I
.i /' NORMALIZED TO:

-
... /
..J
:;. .02
VeE = 5V
~ H = .2mW/em 2
I /"'" '~5~0~~-~2=5~--~0--~~2~5~~~5~0--L-~7~5--~~10=0~--~125
5 ~ ~. W ~ ~ 35
VeE - COLLECTOR TO EMITTER - VOLTS T - TEMPERATURE _·C
1. LIGHT CURRENT VS. COLLECTOR 2. RELATIVE LIGHT CURRENT VS.

TO EMITTER VOLTAGE AMBIENT TEMPERATURE
1.0 110 ,----,------,----.-'----,--,-,-----,----,----,----,

I' "\
0.9 100~--+_---r--_+----~m.+_--_r--~----r_~
IIJ
~0.8
I \, 90~--+_---r--_+----~~+_--_r--~----r_--~
o
:l; 0.7 I 1IJ80~--+_---r--_+----r++T+_--_r--~----r_--~
o
IIJ
It:
...J 0.6
II 1\, :::)
I- 70~--+_---r--_+----rT+++_--_r--~----r_--~
:::i
c(
It:
t; 0.5
V ~60~--+----r---+----Hr~+----r--~----r---~
c(
IIJ
Q.
0.4
V \. ~ 50~--+---~--_+----Hrt;+----r--~----t---~
~40~--+----r--~----H-~H----r--~----r---~
II)
IIJ ~
~ 0.3 ./ IIJ
1t:30~--+_---r--_+----~+-ti_--_r--~----r_--~
c(
...J
l:! 0.2 \ 20~--+_--~--_+----~+_+----r--~----r---~
0.1 10~--+---~--_+--~~+_~---r--~~--t---~
o O~~~~~~~~~~~~±=~~~
400 500 600 700 800 900 1000 1100 1200 -90" -70· -50· -30· -10· 10· 30· 50· 70· 90·
).- WAVELENGTH - NANOMETERS DEGREES
3. SPECTRAL RESPONSE CURVE 4. ANGULAR RESPONSE
100
" LOAD RESISTANCE
10.(1
'N~~
Vee
, 'NORMALIZED TO:
c(
E
l~ ~
RL = 100.(1
II. = 10mA r-
LE•.. 56 \. 100.(1
I- 10
Z
IIJ '\
I.
LED It:
\
It:
:::)
RI. OUTPUT
0
l-
x
i\.'
\
(!)
:::i 1.0 .\ \1000.(1
= ... ..J
"'\\~
5. TEST CIRCUIT 6. WAVE FORMS
0.1
Vee = 10V
1.0
RELATIVE SWITCHING SPEED
10
'l\
''\
100
td + tr + ts + tf
7. LIGHT CURRENT VS. RELATIVE

SWITCHING SPEED
183
SOLID STATE
@ D ©ELECTRONICS
'4+'. -'4+' L'14G1,L14G2, L14G3
The General Electric LI4GI ~ L14G3 are highly sensitive NPN Planar Silicon Photo-
transistors. They are housed in a TO-l8 style hermetically sealed package with lens cap.
The L14G series is ideal for use in optoelectronic sensing applications where both high
sensitivity and fast switching speeds are important parameters. Genera1lyonly the collector
and emitter leads are used; a base lead is provided. however. to control sensitivity
COL.LlCTOil
and gain of the device. COllllllens>
absolute maximum ratings: (25 0 C.unless otherwise specified) TOfl\
1C21 \.¥.
"oltages - Dark Characlf!fistics £(1\
Collector to Emitter Voltage VCEO 45 volts
NCHES MILLIMETERS OTES
Currents SYMBOL
MIN. MAX. MIN. MAX.
A .225 .255 5. 6.47
light Current IL 50 mA .016 I
<I>~ .2C9 .230 !I. I !>.s4
Dissipations <1>0.
e
. r8 • 195 4. 4.96
IOC OM 2 NOM 2
Power Dissipation (TA = 250 C)* PT 300 mW III 05 N M
.30
I. 7NOM
:r
Power DiSsipation (Tc = 25 0 C)** PT 600 mW k
O~6 .046
. )28 .048
:.Il
7
.Ijj
.22 1
L .500 12.7
Temperatures a 4~· 45· '45· 45· ~
Junction Temperature -55 to 150 NOTES:

TJ °c 1. Measured from maximum diameter ot device.
Storage Temperature - 65 to 150 °c 2. Leads having maximum diameter. 021"
TSTG (.533mm\ measured in gauging plane.054"
+.001" -.000(137 + .025-.000mm) below
Lead Soldering Time TL 10 Seconds at 260°C' Ihe reference plane of the device shall be
wlthi •. 007 "(.778mm) their true position
*Derate 2.4 mWf'C above 2SoC ambient 'relative to maximum widlh tab.
**Derate 4./8' mWf'C above 2SoC case 3, From centerline tab .
. _---------_-... - -- - ----- ----------

electrical characteristics: (25°C unless otherwise specified)
Ll4Gl Ll4G2 Ll4G3
STATIC CHARACTERISTICS MIN. MAX, MIN. MAX, MIN. MAX.
Light Current
(VCE =5V, Ht = IOrnW/cm2 ) 6 3 12 rnA
Dark Current
(VCE = lOY. II II 0) 10 100 100 100pA
. (IE = lOOIlA, Ic = O. H II 0) V(BRIEBO 5 S 5 V
(Ic = lOOIlA, IE = O. H II 0) V(BR)CB045 45 45 V
{Ic = lOrnA, H 11.0 V(BR)CE04S 4S 45 V
Saturation Voltage
(Ie= lOrnA, IB = ImA) Vce(SAT) 0.4 0.4 0.4
Turn-iin Time{VCE = lOY, Ic'" 2m.\, ton 8 8 8 Ilsec
Turn-Off Time RL = 1000) toff 7 7 7 Ilsec
tH- Radiation Flux Density. Radiation source is on. unfiltered NOTE: A GaAs source of 3.0 mW/cm2 is approximately equivalent
tUllisten filament bulb at 28700K color temperature. to a tungsten source. at 28700 K. of 10 mW/cm 2
184
L 14G1-L14G2-L14G3
10 10
'_":/~
HI~
~
~
~ / ~""' IOmW/cm'2 ~
a~ 1.0 /
~I.
~ ,,
I ...... ,... ""' ern 2 L.tIfII'" ~
S
:::; ~
~:::;
o
III
N
1// /"
//
'?mW:lem 2
flN
:::;
c:
~
./
, /~
~.I , ./ :Imw~cm~ ~ O. I ,
~
iii:
~I If' ~
I
, NORMA 171",,' TO
"". Z
1
....
..J
l.I
NORMALIZED TO
VCE =5V
HI~IOrnW/cm2
......J
~~
.0 I
.01
I .1
. VCE-COLLECTOR TO EMITTER VOLTAGE
~t~lomw/cm2
~ 100
.01
0.1
'/'
L
Ht -TOTAL IRRA&lANCE IN .W/e. 2
0 00
10
""""'
~ " r---- I"""-
"""
~
K~ r- RL"IKn
./
V
~
" f'."'" "r--.. ~~ ~ 1""'00.

/
1,/
.......... ~
/ NORMALIZED TO "" ~
i"'" ""~ RVIOOn - l - i-
1/ ""~
NORMALIZED TO VCE=OVOLTS
VCE o 5V RLolOn
IL"2mA
HI =IOrnW/cm2 t--- ton" toff oSIO.ec I
J . T025°1
RLOljn JJ
O. I
-50 o 50 100 150 LO 10 100
T - TEMPERATURE - 0 C IL-OUTPUT CURRENT-mA
NORMALIZED LIGHT CURRENT VS TEMPERATURE SWITCHING TIMES VS OUTPUT CURRENT

1.4
~ 1.2 ~ c.l
...,V
...,V ~
a
z
~ LO
,./
iI"'" -- 'LEO ISISB
..........
LI48
/'
~
s:J .8
"'" ~
""""'-0
V
~
NORMALIZED TO
ID@25°C
o
~
~
~
..J
.6
.4
NORMALIZED TO
LED 55B INPUT-IOmA
VCE -10 VOLTS
ILolOOIOA
"
V VcEO=IOVOLTS
. 1
..J
•2
To 2SoC
I
/' 25 50 75 100 125 150
o
55 35 15 5 25 45 65 85 05
T-TEMPERATURE _DC T-TEMPERATURE-oC
DARK CURRENT ·VS TEMPERATURE NORMALIZED LIGHT CURRENT VS TEMPERATURE

Both Emitter (LED55B) and Detector
(L 14G) at Same Temperature
185
SOLID STATE
@D© ELECTRONICS
Light Detector High Sensitivity Phototransistor
14+.. -14+1 L14N1-L14N2
The General Electric Ll4NI and L14N2 are NPN Silicon Phototransistors in a TO-IS style
hermetically-sealed package. The device has a top-looking flat lens cap and is ideally suited for
applications requiring high sensitivity in the industrial control and alarm/detection markets. For
phototransistor applications, the collector and emitter leads are used. The base lead is provided to
control phototransistor sensitivity. For application flexibility, the device can also be used as a
photodiode by using the collector and base leads.
absolute maximum ratings: (25 0 C) unless otherwise specified

Voltages - Dark Cha.racteristics
Collector to Em.itter Voltage VCEO 30 volts
·Collector to Base Voltage VCBO 40 volts
Currents (COL.L.ECTOR
CONNECTED
Collector Current Ie 50 rnA TO CASEI
Emitter Current IE 50 rnA ~(5)
Dissipations
B(2).~
Power Dissipation (TA = 25°C)· PT 300 mW
Power Dissipation (Tc = 25°C)" PT 600 mW Em
Temperatures
Junction Temperature TJ -55 to 150 °C
Storage Temperature TSTG :65 to 150 °C
Lead Soldeting Temperature TL 260 °C
(1/16" from case for 10 sec.)
·Derate 2.4 mWrC above 25°C ambient ··Derate 4.8 mW rC abOve 25°C ambient IN( HES IMILU fERS
SYMBOL MIN. MAlt MIN. MAlt
~ES
electrical characteristics: (25 C) unless otherwise specified

0
~
A
016
2
I
5.34
.534
L14N1 L14N2
4>0
4>Ot
.Z~ .3
. rs .1 '"
5,
4
5.85
4.96
STATIC CHARACTERISTICS MIN. TYP. MAX. MIN. TYP. MAX. e I
eo 05C N I 1N~M ~
Photo Current h
36 ,
.0 - I
.16
1.1
(VCE = 5V, Ee = 5mW/cm2) Phototransistor IL 3.0 6.0 6.0 10.0 rnA
(VCB = 5V, Ee = 5mW /cm2) Photodiode IL 5.0 5.0 J.lA -L .501: Iz:r
II 45" 45" 45· 45· ;,
Dark Current
NOTES:
(VCE = 10V, Be'" 0) lcEo 6.0 100 10 100 nA 1. Measured from moximum diameter of device.
(VCB = 25V, Be'" 0) leBO 0.1 25 0.1 25 nA 2. Leads having maximum diameter. 021"
\.533mm' measured in vauging ptane.054"
EmiHer-Base Breakdown Voltage +.001" -.000(131 +D25-.000mm)belaw
(IE = 100J.'A, Ie = 0, Be ... 0) V(BR)EBO 5 10 5 10 V the reference plane of the device shall be
Collector-Base Breakdown Voltage within .001 "1.178mm). their truepasilion
relativetamaximum width tab.
(Ie = 100J.'A, IE = 0, Be"" 0) V(BR)CBO 40 65 40 50 V
(Ie=lmA,Be"'O V(BR)CEO 30 35 30 45 V
Pulse Width :5 300J.'sec,
Duty Cycle :5 1%)
Beam Angle
Beam Angle at 50% Amplitude 8 35 35 degrees
Saturation Voltage
(Ic = 0.8 rnA, E. = 10mW/cm2) VCE(SAT) 0.30 0.40 V
(Ic = 1.6 rnA, Be = 10mW/cm2) VCE(SAT) 0.25 0.40 V
SWITCHING CHARACTERISTICS
Switching Speeds (Phototransistor)
(Vcc = 5V, Ie = 10 rnA, RL = 1000)
Rise Time tr 10 14· J.'sec
Fall Time tf 12 16 J.'sec
Be = Radiation Flux Density. Radiation source is an unfiltered tungsten filament bulb at 28700K color temperature.
Note: A GaAs source of 3.0 mW/cm2 is approximately equivalent-to a tungsten source, at 2870o K, of 10 mW/cm2 •
186
r L14N1, L 14N21

(Normalized to Specification Bias POints)
10
8 4
6 f--NORMALlZE,D TO:
4 f--.,.,Ee = .5~W/em2
t-
Z I- 2
W Vce= 5V Z ',...--
a: w
§
TA = 25'C
2 f--PULSED E =20mw~
1~ ......... V
1--"""
"............. a:
§
v ~
U
!i: 1
tp = 300~sec
i--' U
I-
1
.8
.6
,.,
Cl .8 V-~ V i§ V
::::; .6
~ ......- .4
C .4
/~ ::::;
V
W
N
::::;
<C
:::E
aa:
.2
0 ~ ....
~ W-
f-"
1
0.5
---
i.--- I---"
I---" C
W
N
::::;
<C
:::E
.2
1
,/
V NORMALIZED TO:
Ee = 5rnW/em2
VCE=5V
Z .06
1
.08 111/, /
11111 !---
:s .08
.06
V
./
TA = 25'C
PULSED
tp = 3Oo,.see
I ..04 0.2 Z .04
.= .02 / '
I
.02
IlrI//J I/" 0.1 i.--- I---"
1
.0.01 .02 .04.00.OS.1
Wflll iIf .2 .4.6 .8 1 2 4 6 810 20
1
.2 .4.6.8 1 2 4 6 8 10 20
Vce- COLLECIUH IU EMITTER VOLTAGE- VOLTS E" - TOTAL IRRADIANCE IN rnW/crn2
LIGHT CURRENT VS. COLLECTOR LIGHT CURRENT VS. RADIATION
TO EMITTER VOLTAGE
<
10"
4 IF=SOmA
t- ~
w 2
20mA
ffi
a:
a:
::l
~
10"
10
3 V
V
a:
a:
::l
U
t-
J:
1
.8
10mA
5mA
-
- ...
.6
a:
C§
/"
V 3 .4
2mA
S 10,
C
t----
-
W
2 1--1 rnA
J:l
V N
::::;
c
/""
<C
~ 1
r--
-
--
I!:l 10 a: .08 t-O.SmA
::::; ~
<C
~
a: ./
V NORMALIZED TO: TA = 25'C
VeE = 10V
I
.0 6
l
.04 NORMALIZEi TO: IF = 5 rnA -
t--
a
Z
1
V .= .02 P LSED
VCE = 5V
TA = 2S'C
r--
O. 1 ........
V GA As SOUf!CE (1 N626S) n~
_f TJ=TA' tp = 300~see
o 10 20 30 40 50 60 70 80 90 100 .0 1 -50 -25 0 25 50 75 100
T A - TEMPERATURE - °C T A - TEMPERATURE - CO
DARK CURRENT VS. TEMPERATURE LIGHT CURRENT VS. TEMPERATURE
110 o 100
f \. J \ W 80
I- 90
Z
100
r
II \
1.0
0.9
w
!l;
CI
60
40
,
W Z 20
~ ~ ...... f1( ~1
0 80 0.8 w
a: II. J:
~ t---...
w \ (J)
~
4.
I
I-
::l
70
60
,-./ 0.7'
0.6 ~
i5
Il.. ~
Ul
10
: '"'"
4
.......
~ ........
~ ...... ["'0..,
...... ~
FlL = 1000
r--. ~.Q
-.;;f!
4.
l- SO
J \ 0.5 ~
a: o
w ';::::r-- ~ r- ......
~
r.... ~~ r--.!9?
::l
V \
N
---
::i
~ ....... ~ r--:
0 j:::
w 40 0.4S ~
>
i= 30 I
II
\ 0.3
W
a:
:::E
a:
o
1
.8
.6 NOR'MALIZED TO: NORMALIZED TO:
~
.J
w 20
1\ 0.2 Z .4 t-- Vee = 5V Vee = 5V
Ie = lOrnA
a: \. ~
-g
IC = lOrnA
.2 r-- RL=100n
10
I
0.1
.
; I
TA = 25'C
I I I II
RL = lOOn
TA = 25'C
il I
40 20 a 20 40 SOO 600 700 800 900 1000 1100 .1 .2 .4 .6.11 1 2 4 6 II .1 .2 .4 .6.8 I 2 4 6810
6-ANGULAR DISPLACEMENT A - WAVE LENGTH Ice - OUTPUT CURRENT - rnA
FROM OPTICAL AXIS NANOMETERS
DEGREES RISE TIME FALL TIME
ANGULAR RESPONSE SPECTRAL RESPONSE SWITCHING SPEED VS. BIAS
187
SOLID STATE
@ D co ELECTRONICS , I
Light Detector High Sensitivity Phototransistor

,pc,. -'4+' L14P1-L14P2
The General Electric L14PI and L14P2 are NPN Silicon Phototransistors in a TO-IS style
hermetically-sealed package. The device has a top-looking flat lens cap and is ideally suited for
applications requiring high sensitivity in the industrial control and alarm/detection markets. For
phototransistor applications, the collector and emitter leads are used. The base lead is provided to
control phototransistor sensitivity. For application flexibility, the device can also be used as a
photodiode by using the collector and base leads.
absolute maximum ratings: (25 0 C) unless otherwise specified

Voltages - Dark Characteristics
Collector to Emitter Voltage VtEo 30 volts
Currents
Collector Current Ie ..... 50 ,rnA
Emitter Current IE 50 IDA COLL.lCTOII
Dissipations
Power Dissipation (TA = 25°q·
Power Dissipation (Tc = 25°q··
PT
PT
300
600
mW
mW
T01?\
(OIlNICT&D
Temperatures l(al ~
Junction Temperature TJ .55 to 150 °C III \
Storage Temperature TSTG ·65 to 150 ·C
Lead Soldering Temperature TL 260 °C .11
(1/16" from case for 10 sec.)
·Der~te 2.4 mW1°C above 25°C ambient ··Derate 4,8 mW;oC above 25°C ambient
I~'--'I . :."
electrical characteristics: (25 0 C) unless otherwise specified d;
Z
L14P1 L14P2 Z
STATIC CHARACTERISTICS MIN. TYP. MAX. MIN. TYP. MAX. ~ )3C -
Photo Current
(VCE =5V, Ee = 1mWlem2) Phototransistor IL 4,0 8.0 8.0 11.0 rnA . 50!
-4!;0
IZ.
45"
- ;,
45"
(VCB =5V, Ee =1mWlem2) Photodiode IL 6.0 6.0 p.A
NOTES:
Dark Current I. Measured from maximum diameter of de.ice.
2. Leads having maximum diameter. 021"
(VCE =lOV, E. ... 0) leEO 6.0 100 10.0 100 nA (.533mm\ measured in gouging plane.054"
(VciI =25V, E. "" 0) leBO 0.1 25 . 0.1 25 nA +.001· -.0001137 +.025-.000mm)belaw
Emitter-Base Breakdown Voltage the reference plane of the device sholl be
(IE =100p.A, Ie =0, E. ... 0) V(BR)EBO 5 10 5 10 V within .007 "\.778mm) their true position
reloti.e to moximum' ..idth tob.
Collector-Base Breakdown Voltage 3. From centerline tab.
(Ic =100p.A, IE =0, E. "" 0) V(BR)CBO 40 65 40 50 V
(Ic =1 rnA, E. ... 0 V(BR)CEO 30 55 30 45 V
Beam Angle
Beam Angle at 50% Amplitude 8 12 12 degrees
Saturation Voltage
(lc =0.8 rnA, Ee =2mWlem2) VCE(SAT) 0.30 0.40 V
(Ic =1.6 rnA, Ee =2mWlem2) VCE(SAT) 0.25 0.40 V
Switching Speeds (Phototranslstor)
(Vcc =5V, Ic =10 rnA, RL =lOOn)
Rise Time tr 10 14 p.sec
Fall Time tf 12 16 p.sec
Ee =Radiation Flux Density. Radiation source is an unfiltered tungsten filament bulb at 2870"K color temperature.
Note: A GaAs source of 3.0 mWlem2 is approximately equivalent to a tungsten source, at 2870"K, of 10 mWlem2.
188
IL14P1, L14P21
(Normalized to Specification Bias Points)
10
8
-
4
6 I-- NORMALIZED TO: Ee = 20mW/CmZ
10
I-- Ee = lmW/cm 2
iW iW ...---
~::::0 ~~
4 Vep 5V 2
a:
~
TA = 25°C
~ 2 I-- PULSED
~
~~ -I-
::I 1
tp = 3OO",ec ~ () .8
V
()
i(!)
1
i .6
V
.8
.6 ./. k...:: ~ ..... (!) .4
NORMALIZED TO:
VeE = 5V -
h :;::;:: ~~ 0.5 l-
::::;
o
.W
.4
#. ~ ~ ~ ~
,/
::::;
@ .2 /' Ee = 1 mW/cm 2
TA = 25"C
PULSED -
~
..J
«
:::!:
.2
.1 IlIh ~
0.2
-'"
,/
N
::::;
«
:::!:
0.1
.oa
/' tp = 300"sec
0.1
a: .08
'/ .,- ~ .06
~ .06
I .04
'/.'1111 / Z
I .04
.: .02
~ ~II/ oJ
.02
1
.0 .01 .02
~
1/ II
.04 .06.08.1
'1/1 .2 .4.6 .8 1 2 4 6 810 20
.0 1
0.1 .2 .4 .6.a 1 2 4 6 8 10 20
VCE- COLLECTOR TO EMliTERVOLTAGE- VOLTS Ee - TOTAL IRRADIANCE IN mW/em2
LIGHT CURRENT VS. COLLECTOR LIGHT CURRENT VS. RADIATION
TO EMITTER VOLTAGE
10'
NOR~ALlZE~ TO:
IF=50mA
4
-F===:::::: "-
I-
~ 10"
a:
a:
::I
TA = 25°C
VeE = 10V
/'
/'
I-
Z
W
a:
~ 1
- 20mA
10mA
5mA
---
() () .8
3
~ 10 I- .6
a:
~ /' J:
(!)
::::;
.4 f-- 2mA
S 102 / @ .2
..9.
/' N 1 mA
-
oW ::::;
/" « 0.1
N 10 :::!: .08
::::; ~ .06 r-
«
:::!:
a: ./
/' Z
I .04
0.5 mA
NtRMAL1ZE, TO: IF = 5 mA - _____

oz VeE = 5vI
r---
/v 10 20
./
30 40 50 60 70 80 90 100
.: .02
I'ULSED.L
TA =25°C
-25
I
~AA, SOU RCf(1 N62641. tp = 3OOpsec. TJ=TA
.01 -50 o 25 so 75 100
T A- TEMPERATURE - °C T A - TEMPERATURE - CO
DARK CURRENT VS. TEMPERATURE LIGHT CURRENT VS. TEMPERATURE
110
100
I-
Z 90
J\ I 9
W
~ 80
I \ I 1\ a
I
W
~ 70
1 W
7 (/)
Z
I-
:l 60
/'r-' \ o
a..
6 (/)
D..
j 50
j \ w
5 a:
o
W 40
V \ 4
w
>
i=
>
- 30
f' \ 3 W
:s
<t a:
~ \
C
20
\ \. 2
10 .21--+--+-+++--+-+-lH+---i-t-++t--+--+-t-H
1
-40 -20 0 20 40 500 600 700 aoo 900 1000 1100 .1.1-1--"".2!'---.4H.6""'.B/;-I!--'2!'---4H6\--\-'10~/.I"'-*.2--+.4-.*"6-j,.a-+l--!'2"--~4-k6-.la~10'
8-ANGULAR DISPLACEMENT A - WAVE LENGTH ICE - OUTPUT CURRENT - mA
FROM OPTiCAL AXIS NANOMETERS
DEGREES RISE TIME FALL TIME
ANGULAR RESPONSE SPECTRAL RESPONSE SWITCHING SPEED VS. BIAS
189
:)ULIU ~ IAII:.
@ coELECTRONICS
Light Detector
'4+'. -'AE' L14Q1
Planar Silicon Photo-Transistor
~wrDE
ET ' 1~
-!G"
RED
COLOR
.b..JZl~
"
9- ff"il
SECTION x-x
The General Electric L14Ql Light Detector is a NPN planar silicon

phototransistor. It is packaged in a side-looking clear epoxy encapsulant.
T PLANE
absolute maximum ratings: (25°C) (unless otherwise specified)

VOLTAGES - Dark Characteristics
Collector to Emitter Voltage VCEO 30 V
1ft Jl I 2
Emitter to Collector Voltage VECO 6 V SVM. :~fi.r. INCHES NOTES

MIN MAX MIN MAX
CURRENT A 5.59 5.80 .220 .228
Light Current (continuous) IL 100 rnA •
Ob
1.78 NOM • .010 NOM
.60 .7'.024 .030
2
DISSIPATION b, ,51 NOM. .020 NOM

4.45 4.70 .115 .185
Power Dissipation (TA = 2S°C)* °
PT ISO mW
E, ...
2 .• ' 2.67 .095
.B9 .023
.'05
.027
TEMPERATURES G
2.4' 2.67 .095
1.98 NOM. .078
.105
NOM
3
Junction Thmperature TJ -55 to +100 L 12.7 - .500 -

Ll 1.40 1.65 .065 .065
Storage Thmperature T STG -5S to + 100 S .83 .94 .033 .037 3
Lead Soldering Temperature TL 260 NOTES:
(S seconds maximum, 1.6mm from case) ,. Two leads. Lead croll section dimensions·uncon-
trolled within 1.27 MM (.OSO'" of ...ting plane.
*Derate2.OmW/oC above 25°C ambient (.010'" of true positMJn.
3. As m ...ured at the seating plane.
4. Inch dimensions derived from millimet.....
electrical characteristics: (25°C)

DETECTOR ONLY SYMBOL MIN. TYP. MAX. UNITS
Light Current
(VeE = SV, Eet = SmW/cm2 @ 2870 0 K) IL 1.0 4 rnA
Dark Current
(V CE = 2SV, Ee = 0) 10 -, 100 nA
Beam Angle at Half Power Point
(Half angle) (JH 30 Deg.
Saturation Voltage
(Ic = O.SrnA, Ee = 2rnW/cm2 @ 2870 0 K) V CE~sat) 0.2 0.4 V
(Ie = trnA) V(BR)CBO 30 V
Emitter-Collector Breakdown Voltage
(IE = tOOILA) V(BR)BCO 6 V
Collector-Emitter Capacitance
(VCE = Sv, f = IMHz) C ceo 3.3 5 pF
coupled characteristics
Light Current
(VCE = sv, IF = 20rnA) 4 rnA
Turn On Time
(Vcc = Sv, IF = 30mA, RL = 2.5ldl) tan 8
Turn Off Time
(Vcc = 5V, IF = 30mA, RL = 2.SKO) 50 ILs
NOTE: Coupled electrical characteristics are measured using an F5Fl GaAs IRED at a separation distance of 4mm (.155 inches) with the lenses of the
emitter and detector on a common axis within O.lmm and parallel within 5 ° . '
tThe F5F 940nm radiation is approximately 3 times more efficient than the 2870 0 K tungsten irradiance on this device. This means 1.5mW Icm' from the
F5F is equivalent to the 5mW/cm' at 2870 o K. .
190
....
z
Ul
!f
10
1
.....-:
Eel2870 K)-20 mW/cm'
lU mWlcm 2
5 mW/cm 2
L------- ....
z
~,
4
a /. ~ 2 mW/cm 2
I a:
::l
<..l
~ ..... --
i.-"" ....
:I:
I mW/cm 2 C>
I :J
.1
o 11// ;.-' 0.5 mW/cm 2 0
-
Ul Ul
--
N
Vi
N
:J 0.2 mW/cm Z
:Jl
« «
::;;
=-~.01 I-""
01 m~/cm2 a:
0
TO
z
r
1// ...- I-"'"
z NORMALIZED T O _ I..J
I VCE= 5V
Ee; 5mW/cm 2
TA = 25°C
.001
.1 .2 2 10 20 -25 0 25 50 75 100
VCE 1N VOLTS TA- AMBIENT TEMPERATURE ·C
1. LIGHT CURRENT VS. COLLECTOR 2. LIGHT CURRENT VS. AMBIENT TEMPERATURE

TO EMITTER VOLTAGE
4r---------~--~-------.------r_--_.~,
o
~ Ul
IIJ
!l; COUPLED SWlTCHING
. / ...-/ WITH F5Fl 75
~
C>
Z RL
VCC 5V, I F= A
VcC25VO~ ~ 2 PW=300/Ls, PRR=lOOpps
./ ./ ~Ul NORMALIZED TO RC' 2.5KSl.
~CE=IO VOLTS ~
I ./ :J
NORMALIZED TO-
. / . ....- ~ lD~----------+--7~------+------+----+-~
:D~ G
VCE=25V _
a: RL
,1// ./'
TA = 25°C
~ o.ei---------:7'9f----------
:::
~ 0.6 1----""7""------+--------
IF
/
VC; _
-
c:
o
0.I
25 50 75 10 2K 4K 6K 10K
TA - AMBIENT TEMPERATURE _·C RL - LOAD RESISTANCE - OHMS
3. LEAKAGE CURRENT VS. TEMPERATURE 4. SWITCHING TIME VS. LOAD RESISTANCE
50
1.0
J ~~
I
n,
I
0.9
o.e
/
/ I \!.
; , ,'\1
·l,...,fN6264-IN626E ",,10
z
IIJ
a:
a:
::l
......-
..--- ~
0.7
U4C~ V
! ,; ~
<..l
"" / NORMALIZED TO
VcC 5V
~0.6
z
o
f}; 0.5
7 ! ~ I'
,f ~
:r 1
!:a
J L IF =20mA
d=4mm
...
rr 0.4 / ! !, \ o
W
N
:J V
PULSED F5F1
PW=IO!-'s
PRR: 100pps
ii 0.3 ~
w
> I
/" \ \ :i
a:
.1
/ -jdi-
J
\, o
~ ~I
I z
/
~0.2 I \ \
II
O. 1
F5G --.
I
!
,I \ \
\\
.01
o .005
500 600 700 800 900 1000 1100 I 10 100 1000
X-WAVE LENGTH - NANOMETERS IF - INPUT CURRENT - mA
5. SPECTRAL RESPONSE 6. COUPLED LIGHT CURRENT

VS. F5F1 INPUT CURRENT
191
~DSIAIE
@ D co ELECTRONICS
Light Detector Planar Silicon Photo-Darlington Amplifier YELLOW
COLOR
~wu
IAE'. -'%' L14R1
Er
rl
'
-16'
eOOE
/' ~bl-L bl
.bSECTIONT x-x
~ LEAD PROFILE
l{( 1
'1i=
The General Electric L14Rl' Light Detector is a planar silicon Darlington-connected
Photo-transistor. It is packaged in a side-looking clear epoxy encapsulant. .
absolute maximum ratings: (2S0C) (unless othetwise specified)

VOLTAGE (Dark characteristics)
Collector to Emitter Voltage
SYMBOL
VCEO 30
,UNITS
V
1l I 2
Emitter to Collector Voltage V ECO 7 V
SYM :~fL:r. INCHES NOTES
CURRENT MIN MAX MIN MAX
Light Current (continuous) IL 100 rnA A' 5.59 5,eo ,220 .228
8 1.78 NOM• •070 ~OM 2
Dissipation ¢b .eo .75 .024 .030 1
b, .51 NOM. .020 ~M 1
PowerDissipation(TA = 25°C)* PT 150 mW 0 4.4S 4.70 .175 .laS .
E 2.41 2.67 .095 .105
"
TEMPERATURES
Junction Temperature TJ -55 to + 100 °C
.
G
E,
2.41
.58
1.98 NDM.
.69 .023 .027
2.67 .095 .105
.078 NOM
3
-55 to + 100 °C L 12.7 - .SOO -

Storage Thmperature T STO L, .1.40 1.65 .055 .085
Lead Soldering Temperature TL 260 °C 5 ,83 .94 .033 .037 3
(5 seconds maximum 1.6mm from case)

,.
NOTES:
Two lead•. Lead crOll section dimlintions uncon-
trolled within 1.27 MM 1.050") of seating plena.
*Derate 2.OrnW/OC above 2SoC ambient 2. Centerline of active element lOcated within .2& MM
to,O") of true position.
electrical characteristics: (2S0C) ..

3. As mll.urld at the lUting plane.
Inch dimensions derived from millimeters.
DETECTOR ONLY SYMBOL MIN. TYP. MAX. UNITS

Light Current
(VCE = 1.5V, Eet = 1mW/cm2 @ 2870 0 K) IL 5 18 rnA
Dark Current
(VCE = 25Y, Ee = 0) ID 100 nA
Beam Angle at Half Power Point
(Half Angle) 88 30 Deg.
Saturation Voltage
(lc = 20rnA, Ee = 2mW/cm2 @ 2870 0 K) V CE(sat) .9 1.2 V
(Ie = 1rnA) V (BR)CEO 30 V
Emitter-Collector Breakdown Voltage
(IE = lOO/LA) V (BR)ECO 7 V
Collector-Emitter Capacitance
(VCE = 5Y, f = 1MHz) C ceo 5 8 pF
coupled characteristics:
Light Current
(VCE = i .5Y, IF = SrnA) 18 ,rnA
Turn On Time
(Vcc = 5Y, IF = lOrnA, RL = 7500) tan 45 /Ls
Turn Off Time
(Vcc = 5Y, IF = lOrnA, RL = 7500) 250 /Ls
NOTE: Coupled characteristics are measured using an FSFI GaAs IRED at a separation distance of 4.0mm (.ISS in.) with the lenses of the emitter and detector
on a common axis within O.lmm and paralteI within So.
tThe F5F 940nmradiation is approximately 3 times more efficient than,the 2870 0 K tungsten irradiance on this device. This means O.3mW fcm' from the
FSF is equivalent to the ImW/cm' at 2870 0 K.
192
--
10
Ee{2870"K)" 3 mW/cm 2
..,../' L--'"
2 mW/Cm 2 ~
~
LIJ
1
~
V/
ImWcm 2
0.5mW/Cm 2
-- ~
'"~ 1r---~~~~--+---~~~---+-----4------~
~
Ii ~
0:
::> ::>
<) <)
U2mW/cm 2 I-
~ .1 :I:
S III I-'" 0.1 mW/cm Z C)
...J :J
o
LIJ
r::!
...J
.01
'1/ V J
NORMALIZED TO
VCE = 1.5V
o
LIJ
N
~
C[
Ee = lmW/cm 2
~
/
2i
0: TA 25"C
o o
z z NORMALIZED TO
,001 VCE -1.5V
..... I E = 1 mW/cml -
II T/\ =2S"C
.0001
.S .8 2 4 S 8 10 -25 0 25 50 75 lCO
VCE IN VOLTS
TA - AMBIENT. TEMPERATURE _·c
1. LIGHT CURRENT VS. 2. LIGHT CURRENT VS. AMBIENT TEMPERATURE
COLLECTOR-EMITTER VOLTAGE
4
/ o
LIJ
COUPLED 'SWITCHING WI~H F5FI
./ ./ ~
en ~5 I /
V/ C)2
Vcc"5V. IF =
L
A
I
~~
z PW=300ILS, PRR=IOOpps
:E
./ ./ NORMALlZE;D TO RL=750n
VCE = 25 V O L V . / o E = 10 VOLTS
~en I
fil·8 k::=""
V /" N
~.s
v/
~V :E
g; .4 '7./V
~r
NORMALIZED TO
./ ./ z
l V/ /
VCE = 25V
T/\ =25· C
--
o
0.2
z :D7G;-
RL
~V
C[
V c
O.1
50 75
o
- .1
-::: I I I
25 100 SO 80 100 200 400 sao 800 1000 2000
TA - AMBIENT TEMPERATURE _·C RL - LOAD RESISTANCE - OHMS
3. LEAKAGE CURRENT VS. TEMPERATURE 4. SWITCHING TIME VS. LOAD RESISTANCE
1.0
,~
)~~
0.9
/ I
I ,
~ ~INS2S4-INS2SE
~
l-------r
I I
0.8
/ ; \ i\) V'
NORMALIZED TO -
VCE=15V
0.7
Ll4C~ V ! \: ~
/' IF = 5mA
d = 4mm -
~O.S L PULSED F5Fl --
/ ,~\..\
z
o
l}; 0.5
... 0.4 V ,! ~
!, o /
PW = lOlLS
PRR=IOOpps
-1d\-
0:
IJ.J
> ./ , 1\ \ \
~ .1
::i V
~~
--
-
/
C[
!i 0.3 :E
a:
...J
~Q2
I I \ \ \, o
zO 1
I' ~..J
0.1
L14R1-J
I
I \ \
o I \\ 1100
.001
500 SOD 700 800 900 1000 10 100 1000
).-WAVE LENGTH - NANOMETERS IF - INPUT CURRENT - mA
5. SPECTRAL RESPONSE 6. COUPLED LIGHT CURRENT VS.

F5F1 INPUT CURRENT
193
sou0 STATE ,
@ . co ELECTRONICS
Fiber Optic Detectors
Ii
~;:;\ SEE lIME 2 2
GFOD1A1 - GFOD1A2 , . -;-"1 ~
Silicon Phototransistor Detectors for Fiber Optic Systems ~. SECTION x·.
T L£AO~IL£
The General Electric GFODIAI and GFOPIA2 are silicon photo": EAII .
transistors whiCh detect and convert light signals from optical 2

fibers into electrical signals. They are packaged in a housing de-
signed to optimize fiber coupling efficiency, reliability, and cost. ~ EMITTER
They mate directly with AMP OPTIMATEIII fiber optic connectors 2. COLLECTOR
for easy interconnection and use. Mounting is compatible with SAE

and metric fasteners of both through hole and self-tapping types.
"
absolute maximum ratings
MIWI!IETERS INCHES
(25°C unless otherwise specified) SYM. IIOTES
MIN. I MAX.
I
MIN. MAll
A 10.671 11.17
Voltages .420 .440

. Emitter to Collector Voltage
Vcoo
VEa>.
30
5
V
V
c/Ib
bl
C
0
.61
.50
9.88
13.47
INOM.
.66
10.28
13.97
.024
I
.020 NOM.
.389 .404
.530 . .550
.026 1
1
Current 81 1.27 NOM. .050 NOM.

82 7.93 8.07 .312 .318
Collector Current (continuous) 100 mA F 5.87 6.12 .231 .241
Dissipation G 5.08 5.58 .200 .220
H 6.84 7.08 .269 .279
Power Dissipation (TA = 25°C)· PT 150 mW K 5.11 5.25 .201 .207
Temperarures L
M
12.22
7.73
-
7:97
.481
.304 .314
-
Operating Temperature -55°C to +85°C P 3.00 REF. .118 REF.
Rl 4.70 4.82 .185 .190
Storage Temperature -55°C to +IOO°C R2 9.40 9.85 .370 .380
Lead Soldering Time 5 seconds at 260°C T 5116-32 NEF 2A
re
4tDerate 2.5 mW above 25°e ambient. NOTES:
1.. Two Leads
2. Mounting Holes _ attached drawing or M2xO.4
or Self-Tapping Screws
electrical characteristics (25°C unless otherwise specified)
SYM.BOL MIN. TYP. MAX. UNITS
Collector to Emitter Breakdown Voltage V(BR)CEO 30 V

(Ie =10 rnA, Pin =0)
Emitter to Collector Bretlkdown Voltage 5 V
(IE :: 100 p.A, Pin = 0)
Collector Dark Current lcEo 100
(VCE =10V, Pin =0)
optical characteristics (25°C unless otherwise specified)

Responsivity (Note I) GFODIAI R 70 p.Ajp.W

(VCE= 5V, Pin = 10P.W.AP = 940 oM) GFODIA2 R 30 p.Ajp.W
Turn on time (See Note 1)
(Va:. = 5V,IF = 30 mA, RL = 25KO) 8 p.s
ton
(Vee = 1.5V, IF = 10 mA, RL= 0) fon 3 p.s
Turn off time (See Note I)
(Vee = 5\7. IF = 30 mA, RL = 25K 0) tolf 50 p.s
(Va:. = 1.5V, IF = 10 rnA, RL = 0) toff 3 p.s
Note 1: Radiation source used is a GFOEIAI Fiber Optic Emitte~ coupled via 1 mete~ of CROFONe 1040 Fiber terminated per AMP
Incorporated instruction ~heet IS 2878-2.
194
IGFOD1A1-GFOD1A21
-- -
10 100
8 - PIN " 1!5,.W _ f-
6 _PIN"50,.W.~
~
f-
I-
V ~ "1 !i!
~4
----
III 10
50,.W~
~
~
II:
!!i I Io
--
20,.W-
o I-- PIN"20,.W r--- .............-:
2
i
II: 10,.W -
f-"
f;!
:.!
1.0 IIV t
_P1N"10p.W
5,.W=
..J
8
..J
8 ~ r-__ r- !J!.:..2,.W -
f;}
.8
fl / I ~
,,-- I I
N
:::;
.6
J
NORMALIZED TO N
O.I
NORMALIZED TO =
~ .4 VeE"5V. P1N"10p.W ~ PIN"IO,.W. VCE"5V -
II:
o
Z
I .2-
(I T."25"C
(SEE NOTE!)
I
i
..
I
0.010
~ T."25OC .
(SEE HOTEl) -
Jl lp,N "2p.W u
I
L--- I 0.00I
.2 /I .6 .81.0 2 4 6 810 20 40 6080100 o 25 50 75 100
VeE - COLLECTOR TO EMITTER VOLTAGE -VOLTS T. - AMBIENT TEMPERATURE -"C
1. COLLECTOR CURRENT VS. VeE 2. COLLECTOR VS. TEMPERATURE
10I 10
8 I
./ NORMALIZED TO
6 P1N"10,.W. 'lcE"5V
V T."25"C
4
!i: 102 / >-
I-
(SEE NOTE I)
~ >
~
./
~ V IL,
2
!
0. 10
I /" I!l
~I.O
"-
III
NORMALIZED TO - Id .8 """'" ~
N
i /
VeE "IOV
T."25"C
- ~ .6
I.--
- :::Ii
~ IVI
~
Z
A
2 C
~ .2
75 I
0'1
50 100 2 4 6810 20 40 60 80 100 200 400600 1000
T.-AMBIENT TEMPERATURE-"C PIN - POWER INPUT- MICROWATTS
3. COLLECTOR DARK CURRENTVS. TEMPERATURE 4. RESPONSIVITY VS. POWER INPUT
10
4.5
I I / 8
4 I--
Vcc"5V
I, "~A ./
V- f--
6
3 - RL
,/
Z
w
a:
4
NORMALIZED TO CROFON®104 ,1m
RESPONSE AT Vcr5V, DRIVEN BY
;:>V....- /
PW"300/lS
o V a: GFOE1Al AT IF= Om A, TA=25"C
---
PRR"IOOppl ::J
III u SEENOTE1Po=10~W I I I
N NORMALIZED TO ~
i - RL"2.5Ka
a:
o
GALITE 1000®
-
2
~~
t;
II:
i
...
1.5
,0 w
-'
-'
r"o, ~ I-.
lUJ
;
o ./
~ 8Cl
~ 0.6
0,8
PIR140
Z I
.9 ./ I METER - ::;
~ .... ""-
~f"'r.!~-
c( 0.4
z
.9 .8
.7
V
./ " ~FOEIAI ~ DUT Vec_
a:
~
~
~ QSF200B
0,2
.6
./ "-
.5
A51K
2K 3K
I
4K 5K
I
6K
I I I I
7K 8K 9K 10K
I O. 1
0.1 0,2 0.4 0.6 0.8 1
CROFON®1 040\
2
~
4 6 8
I
10
RL-LOAD RESISTANCE-OHMS
FIBER LENGTH, IN METERS
5. SWITCHING SPEED VS. RL 6. COLLECTOR CURRENT VS. FIBER LENGTH
195
SOUDSWE
-@ D ©ELECTRONICS
Fiber Optic· Detectors
Ii-
.R2. SEENOrE2
GFOD1B1 - GFOD1B2 ., ;.-r ~

Silicon Photo-Darlington Detectors for Fiber Optic Systems .T
~ SECTION x-x
LEAD..-I\.E
2·
The General Electric GFODIBI and GFODIB2 are silicon photo-
darlington detectors which detect and convert light signals from
optical fibers into electrical signals. They are packaged in a housing 1 2
designed to optimize fiber coupling efficiency, reliability, and cost.
'i-EMITTER
They mate directly with AMP OPTIMATETII fiber optic connectors 2-COLLECTOR
for easy interconnection and use. Mounting is compatible with SAE
and metric fasteners of both through hole and self-tapping types.
absolute maximum ratings MILLIMETERS INCHES
(25°C unless otherwise specified) 8YM,
MIN. I MAX. MIN. I MAX.
IIOTES
Voltages A 10.671 11.17.420 1 .440

Emitter to Collector Voltage
VCEO
VECO '
30V
5V
4>b
b1
C
0
.61
.50
9.88
I
NOM.
10.26
.66,024
I
.020 NOM.
.389
.026
.404
1
1
13.47 13.97 .530 .550

Current 81 1,27 NOM. .050 NOM.
82 7.93 8.07 .312 .318
Collector Current (continuous) l00mA F 5.87 8.12 .231 .241
Dissipation G 5.08 5.58 .200 .220
H 6.84 7.08' .269 .279
Power Dissipation (TA = 25°C)· 150mW K 5.11 5.25 .201 .207
Temperatures L
M
.. 12.22
7.73 7.97
- .481
.304 .314
-
Operating Temperature -55°C to +85°C p 3.00 REF. . 118 REF.
Storage Temperature -55°C to +loo°C R1 4.70 4.82 .185 .190
R2 9.40 9.65 .370 .380
Lead Soldering Tem~rature 5 seconds at 260°C T 5116-32 NEF 2A
·Derate 2.5 mW;oC above 25"C ambient. NoTES:
1, Two Leads.
electrical characteristics (25°C unless otherwise specified) 2, Mounting Holes see attached drawing SAE 0-80
or M2xO.4 or Self-Tapping Screws.
SYMBOL MIN. TYP. MAx. UNITS

Collector to Emitter Voltage 30 V
(IC = 10 mA, Pin = 0)
Emitter to Collector Voltage V(BR)ECO 5 V
(IE = 100 ",A, Pin = Q)
Collector Dark Current ICEO 100 nA
(VCE = lOV, Pin = 0)

Responsivity (Note 1) GFODIBI R 1000 p.AjpW
(VCE = 1.5V, PIN = 2",W, AP = 940 nm)GFODIB2 R 500 PA/p.W
Turn on Time (See Note 1)
(VCC = 5V, IF = 10 mA, RL =.7500 ton 45 ",s
(VCC = 1.5V, IF = 10 mA, RL = 0) ton 10 p's
Turn Off Time (See Note 1)
(VCC = 5V, IF =. 10 mA, RL = 7500) tolf 250 ps
(VCC = I.5V, IF = 10 mA, RL = 0) toff 25 ps
Note 1: Radiation source used is a GFOEIAI Fiber Optic Emitter coupled via 1 meter of CROFONe 1040 fiber terminated per AMP Incorporated
instruction sheet IS 2878-2.
196
IGFOD1B1-GFOD182 I
100
-- ---
80 100
--
60 P'N"5OI£W-
!Z 40
- - I PIt,,- 351£L ...z 201£W_
III
....... i ..-
120
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NORMALIZED TO
PIN = 21£W, VCE =1.5V -
-
t!l .2 T,,' 25"C .!! .... ~
I
(SEE NOTE I)
T,,=25°C
(SEE NOTE I) I -
0'0.1 .2 /I .6.81.0 2 4 6 810 20 40 60S0100 0.0 I
-50 -25 o 25 50 15 100
VCE -COLLECTOR TO EMITTER VOLTAGE-VOLTS T" - AMBIENT TEMPERATURE _DC
1. COLLECTOR CURRENT VS. VeE 2. COLLECTOR CURRENT VS. TEMPERATURE
10 4 0
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NORMALIZED TO I - -
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T,,=25"C -I---
TA"25°C (SEE NOTE II
(---
I I I I
.1
00.1 0.2
50 75 100 0.5 1.0 2 5 10 20 50 100
T" -AMBIENT TEMPERATURE-oc P,N - POWER INPUT - MICROWATTS
3. COLLECTOR DARK CURRENT VS. TEMPERATURE 4. RESPONSIVITY VS. POWER INPUT

4 I 10
I I I
I METER I I I I I I I
~~~~~'"
... i NORMALIZED TO CROFON7f
-
AT 3m. PO=2,.W, GFOE IA1
/ ~N@I04b
Z
2 GFOEIAI ",a::::::::J-v . III CROF
t~
II:
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III
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OSF 00 ........ GAl/~O
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::::;
C(
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.6 i - - PRR.IOO.....
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o 'QSf2 0
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NORMALIZED TO Q
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RL =750fi
III
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0'10 20 40 60 eo 100 200 400 600 SOO 1000 1500 100
~ no 0.1 I ,10
RL- LOAD RESISTANCE - OHMS FIBER LENGTH (METERS)
5. SWITCHING SPEED VS. RL 6. COLLECTOR CURRENT VS. FIBER
197
SOLIDSTME
@ 0 CO ELECTRONICS
Fiber OptiC Emitters
GFOE1A1 - GFOE1A2
Infrared Emitting Diodes for Fiber Optic Systems
The General Electric GFOEIAI and GFOEIA2 are gallium arsen-
ide, light emitting diodes, which emit non-coherent, infrared
'fJl-'~ T
_All
~ SECTION
LEAD x-x
PROFILE
,
Y
energy with a peak wavelength of 940 nanometers. They are pack- 2
'!TT.i1l~
aged in " housing designed to optimize fiber coupling efficiency,
reliability, and cost. They mate directly with AMP OPTIMATEnI 1-CATHODE
2· ANODE
fiber optic connectors for easy interconnection and use. Mounting is
compatible with SAE and metric fasteners of both through hole and
self-tapping types.
MILLIMETERS INCHES
absolute maximum ratings SYM. IOTfS
I
MIN. I MAX. MIN. I MAX.
(25°C unless otherwise specified) A 10.671 11.17 .420 .440
Voltage
Reverse Voltage 6V
t/lb
bl
C
.61
.50
9.88
INOM.
.66
10.26
.024
.020
.•
I .026
NOM.
.404
1
1
0 13.47 13.97 .530 .550

Currents 81 1.27 NOM. .050 NOM.
82 7.93 8.07 .312 .318
Forward Current (continuous) IF 60mA F 5.87 6.12 .231 .241
G 5.08 5.58 .200 .220
Forward Current (pw 1 #LS, 200 Hz) IF 3A H 6.84 7.08 .269 .279
Dissipation K 5.11 5.25 .201 .207
Power Dissipation (TA = 25°C)· 100mW
L
M
12.22
7.73
-
7.97
.481
.304
-
.314
Temperatures P 3.00 REF. .118 REF.
Rl 4.70 4.82 .185 .190
Operating Temperature -55°C to +85°C R2 9.40 9.65 .370 .380
Storage Temperature -55°C to +100°C T 5118-32 NEF 2A
Lead Soldering Time 5 seconds at 260° C NOTES:
·Derate 1.66 mW;oC above 25°C ambient. 1. Two Leads.
2. Mounting Holes see attached drawing SAE 0-80 or
M2x0.4 or Self·Tapping Screws.
electrical characteristics (25°C unless otherwise specified)
Reverse Breakdown Voltage 6 V
(IR = 10 #LA)
Forward Voltage 1.7 V
(IF = 50 mA)
Reverse Leakage Current 100 nA
(VR = 5V)
Capacitance 30 PE
(V =0 F =1 MHZ)
Fiber Power Output (Note 1) GFOE1A1 Po 100 IlW
(IF = 50 rnA) GFOE1A2 Po 60 #LW
Fiber Power Output (Note 2) GFOE1A1 Po 45 #LW
(IF = 50 rnA) GFOE1A2 Po 25 IlW
Peak Emission Wavelength Xp 940 nm
(IF = 50 mA)
Spectral Shift with Temperature .28 nm;oC
Spectral Bandwidth 50% AX 60 nm
Rise Time 0-90% of Output, IF=50mA, L :5 500 ts 300 nsee
Fall Time 100-10% of Output IF=50mA, Zs :5 50 0 tf 200 osee
Note 1: Measured at the end of 1 meter length of Galite-l000 terminated per AMP Incorporated instruction sheet IS 2878·2 and connected to the DUT.
Note 2: Measuied at the end of 1 meter length of Crofon- 1040 terminated per AMP Incorporated instruaionsheet 15,.2878·2 and connected to the DUT.
198
TYPICAL CHARACTERISTICS IGFOE1A1-GFOE1A21
100 1.4
60
40 ~~
20
., ~ - 1.2
..........
I-
i
10
6
i
I- 1.0
~
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"
I- 4 5
5 , PULSED II:
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...
II: 2
1:,'
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1.0
.6
.4
./
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""" t'--..
NORMALIZED TO
/
~
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.2 IF-SO.. A
TA-~C
j
o .4
~ 0 .I zI NORMALIZED TO
~ .06 IF'SO.. A
IE .04 IE
.0 2
V 2'-- TA02rC
I
0.0.001 .002 .006.01 .02 .06 0.1.2 .6 1.0 2 6 10 o -50 -25 0 25 SO 75 85
I F- FORWARD CURRENT -AMPERES TA -AMBIENT TEMPERATURE -"C
100
- ~Q
- -- -- --
SO " ,..
I:
'l>l\,'i>7 ,."
V'" /" ./'

1000
.., -
~[7/[7
600 c
1 400 :J
I
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200
100
60
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§
20
10
TAOS505"V -55Y
~ 40 " u S ./ /
lII: 20
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e
J:. 10
j l
~ 4
/ V 7
6
4 I
I
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2
/ / V
2
I
2
VF - FORWARD VOLTAGE - VOLTS
3 4 I
II /
0.9 1.0 1.1 1.2 1.3
/ 1.4 1.5
VF-FORWARD VOLTAGE -VOLTS
3. FORWARD VOLTAGE VS. FORWARD CURRENT 4. FORWARD VOLTAGE VS. FORWARD CURRENT
1000
SOO
600 v NORMALIZED TO CROF~ 1040
AT 1m. IF'50mA. TA • 25"C _
400 '/ ...... ""'-. r--
lIE
::&. I;V 2
~i'. ..........
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--
3!: 200
III ool tOSF400B
...
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~ 100
is SO V
./
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/100'"
~
LAUNCHED CORE POWER vs. CORE DIAMETER
i0.2 f- OSF200B
\
o?OJ
...
II: 40 FOR N.A.' 0.22
.os
GI
iL V NORMALIZED TO CROl'ONCi 1040
POWER AT I.., IF -50.. A. T·'25-c
.0&
.04
\
\ \
,
SEE NOTE I
20 CROFON 1040\ GALITE™ 100<\
2
10
.001 .002 .00& .01 .02 .04 .06.os.l 2 4 6 SIO DId:, .2 • .6 .SI.O 2 6 810
1\
4 20 40 6080100
NORMALIZED CORE POWER LAUNCHED LENGTH (METERS)
5. POWER OUTPUT VS. FIBER DIAMETER 6. POWER OUTPUT VS. FIBER LENGTH
199
SOUOSTm"E
@ D© ELECTRONICS
Photon Coupled Isolator 4N25-4N25A-4N26-4N27-4N28 I~ MILLIMETERS
MIN. MAX. MIN.
INCHES
MAX.
NOTES
GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor. ~ A 8.38 _I 8.89 .330 J .350
B 7.62 REF. .300 ,REF. 1
The General Electric 4N25-4N26-4N27-4N28 consist of a C -
.406
8.64 -
.016
.340
.020
2
·0 .508
gallium arsenide infrared emitting diode coupled with a sili- E - 5.08 - .200 3
con photo transistor in a dual in-line package. s:t:~~G F 1.01 1.78 .040 .070
~r.K C--A-I H
G 2.28
-'
2.80
2.16
.090
-
.110
.085 4
N'
J .203 .305 .008 .012
FEATURES: 2.54 - .100 -
I r--,- -, 6 1 -,- 3 1. -t K
M - 15' - 15'
• Fast switching speeds B b,' (TOP VIEW) 5 N .381 - .015 -
• High DC current transfer ratio 2 ,5 M I I4 6-.l P
R
~
2.92
9.53
3.43
-
.115
.375
.135
• High isolation resistance 30--1- 4 ._-="",",,"" ~ 5 6.10 6.86 .240 .270
1 ;m'
-'-L
___
• 2500 volts'isolation voltage ,L __ .J. ~Hf-

. \ -JFf- NOTES:
• II0 compatible with integrated circuits

1. INSTALLED POSITION LEAD CENTERS.
R I 2. OVERALL, INSTALLED DIMENSION.
1M Covered under U .L. component recognition program, reference file ES1868 t I 3. THESE MEASUREMENTS ARE MADE FROM THE
tParameters are JEDEC registered values. ", SEATING PLANE.
G I 4. FOU R PLACES.
absolute maximum ratings: (25°C) (unless otherwise specified) -11_0
tStorage Temperature ·55 to 150°C. Operating Temperature ·55 to 100°C. Lead Soldering Time (at 260°C) 10 seconds.
INFRARED EMITTING DIODE PHOTO-TRANSISTOR

t Power Dissipation *150 milliwatts tPower Dissipation **150 milliwatts
tForward Cmrent (Continuous) 80 milliamps tVCEO 30 volts
tForward Cmrent (Peak) 3 ampere tVCBO 70 volts
(Pulse width 300 ILsec 2% duty cycle) tVECO 7 volts
t Reverse Voltage 3 volts Collector Current. (Continuous) 100 milliamps
*Derate 2.0mW/oC above 25°C ambient.
tTotal device dissipation@24-25°C. PD 250mW. tDerate 3.3 mW/oC above 25°C ambient.
individual electrical characteristics (25°C)

INFRARED EMITTING TYP. MAX. UNITS PHOTO·TRANSISTOR MIN. TYP. MAX. UNITS
DIODE
tForward Voltage 1.1 1.5 volts tBreakdown Voltage - V(BR)CEO 30 -- -- volts
(IF = 10 rnA) (Ic = ImA, IF =0)
tBreakdown Voltage -- V(BR)CBO
(Ic = 1001LA. IF = 0) .
70 - - volts
t Reverse Current -- 100 microamps tBreakdown Voltage -- V(BR)ECO 7 - -- volts

(VR = 3V) (IE =100ILA. IF =0)
tCollector Dark Current leEO 4N25-27 - 5 50 nanoamps
(VeE = 10V, IF = 0) 4N28 - -- 100 nanoamps
Capacitance 50 - picofarads t Collector Dark CWTent - leBO - 2 20 nanoamps
V=O;f= I MHz (VCB = 10V, IF = 0)
coupled electrical characteristics (25 °C)

a.,IN. TYP. MAX. UNITS
t DC Current Transfer Ratio (I F = 10mA, VCE = 10V) 4N25, 4N25A, 4N26
4N27.4N28
20
10
-- -
-
%
%
tSaturation Voltage - Collector -- Emitter (IF = SOmA,
1e=2mN . .
- 0.1 0.5 volts
Resistance -- IRED to Photo-Transistor (~500 volts) - 100 - gigaohms

Capacitance"": IRED to Photo-Transistor @Ovolts, f= 1 MHz) - 1 - picofarad.
tIsolation Voltage -- voltage @ 60 Hz with the input 4N25 2500 -- - volts (peak)
terminals (diode) shorted together and the output
ter~ls (transistor) shorted together.
4N26.4N27
4N28
1500
500
--- --
--
volt!! (peak)
volts (peak)
Rise/Fall Time (VCE = I OV. ICE =2mA. RL = 1000)

4N25A
.- 1775 -
2
-
-
volts (RMS) (1 sec.)
microse·conds
Rise/Fall Time (VCB = 10V, fCB =SOILA, RL =lOOn) - 300 -- nanosecond~
@VDE Approved to 0883/6.80 OllOb Certificate# 35025
200
TYPICAL CHARACTERISTICS 4N25·28
10
If = 20mA
I V
~ io"'"
~
Z
III
II:
-
u
i
~
5
1.0
/~
~
L
V ~
u 1.0
~
;;)
II.
~
5 ---
IF -IOmA
- r--
----
a NORMALIZED. TO:
-
III VCE -IOV a
III IF' 5mA
N
N
::::i
/ If - 10mA
I
c
~
!i
o. I
I
NORMALIZED TO:
VeE "IOV
r--
I / I IF -IOmA
...S U
...
.U
S TA • 25"C
.0I O. I
I 10 100 -55 -15 25 65 100
If -INPUT CURRENT - mA TA - AMBIENT TEMPERATURE -"C
OUTPUT CURRENT VS INPUT CURRENT OUTPUT CURRENT VS TEMPERATURE
,.--
-
1.000 10
10-- ....
./ ~
...- IF' 50mA
100 Z
III
,,"" I I
~
I
~
Z 10
/' II:
II:
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1.0
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a
III
N
II if..". "..
IF =5mA
II: ::::i II / f
e O. I ~ o. I
, NORMALIZED TO:
/
I II:
VCE -IOV
... II. i I II IF • 10mA
.0 I
... S rr
I U
I
I .0I 11
~ LO 1.5 2.0 .1 I 10 100
Vf - FORWARD VOLTAGE - VOLTS VeE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS
10 100
"""-
---
"-
~~
r- ....
I"""RL - IKG
c
~
~
/'
/
"',
"- Z
........ ..... III
i' .....
II:
B 10 /'
~
.........
i""oo...
........
~
i
~
~
.... r-. 5 V
r-- NORMALIZED TO:
VCE " 10 VOLTS
ICEO' 2mA
" ~
.... ~ """- ~'Ioon I
............ RL -lOA
- I
...§ / Vca =IOV
.0I
I - - tON - tOff • 3,.SEC
RL-IOOn
I I
II I
.1 1.0 10 100 10 100
I CEO -OUTPUT CURRENT -mA I f -INPUT CURRENT - mA
SWITCHING TIMES VS OUTPUT CURRENT OUTPUT CURRENT (leBO) VS INPUT CURRENT
201
SOLID STATE
-@D CO ELECTRONICS
Photon Coupled Isolator 4N29-4N29A-4N30-4N31
4N32-4N32A-4N33 S'IMIlOI..
MILLIMETERS
MIN, MAX,
INCHES
MIN. MAX.
NOTES
Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier A 8.38 ,I 8.891 .330 _I ..350
B- 7.62 REF. .300 REF. 1
The General Electric 4N29 thru 4N33 consist of a gallium C

D
-
.406
8.64
.5OB
-
.016
.340
.020
2
arsenide infrared emitting diode coupled with a silicon photo- E - 5.08 - .200 3
F 1.01 1.78 .040 .070
darlington amplifier in a dual in-line package. SEATING G 2.28 2.80 .090 .110
____ PLANE
-
FEATURES: I r , 6 J7 K r E::1
H
J
-
.203
2.16
.305 .OOB
.085
.012
4
• . DC current transfer ratio <>--n~

High 2o---f-I, 5f==:: -I-N I
-i---,----="-S
K
M
2,54
-
-
15"
.100
-
-
15"
N .381 - .015 -
• High isolation resistance 30--1-" I 4 P - 9.53 - .375
R 2.92 3.43 .115 .135
• 2500 volts isolation voltage L ___ ..l S 6.10 6.86 .240 .270
• I/O compatible with integrated circuits NOTES:
tParameters are JEDEC registered values. \ 1. INSTALLED POSITION LEAD CENTERS.
_Covered under U.L. component recognition program, reference file E51868 2. OVERALL INSTALLED DIMENSION.
3. THESE MEASUREMENTS ARE MADE FROM THE
absolute maximum ratings: (25°C) (unlessotherwisespecified) SEATING PLANE. 4. FOUR PLACES.
tStorage Temperature -55 to 150°C. Operating Temperature -55 to 100°C. Lead Soldering Time (at 260°C) 10 seconds.
INFRARED EMITTING DIODE PHOTO-DARLINGTON

tPower Dissipation *150 milliwatts tPower Dissipation **150 milliwatts
t Forward Current (Continuous) SO milliamps tVCEO ' 30 volts
tForward Current (Peak) 3 ampere tVCBO 30 volts
(Pulse width 300J.Lsec, 2% duty cycle) tVEBO 5 volts
t Reverse Voltage 3 volts Collector Current (Continuous) 100 milliamps
*Derate 2.0mW/oC above 25°C ambient. **Derate 2.0mW/oC above 25°C ambient.
tTotal device dissipation@TA = 25°C. PD 250 mW. tDerate 3.3 mW/oC above 25°C ambient.
INFRARED EMITTING TYP. MAX. UNITS PHOTO~DARLINGTON MIN. TYP. MAX. UNITS
tForward Voltage 1.2 1.5 volts tBreakdown Voltage - V(BR)CBO 30 - - volts

(IF = lOrnA) (Ic = 100J.LA, IF =0)
tBreakdown Voltage - V(BR)CEO 30 - - volts
t Reverse Current - 100 microamps (Ic = ImA, IF = 0)
(V R = 3V) . tBreakdown Voltage -:- V(BR)EBO 5 - - volts
(IE = 100J.LA, IF := 0)
Capacitance 50 - picofarads tCollector Dark Current - ICEO - - 100 nanoamps
V= O,f= 1 MHz (VCE = lOY, IF =0)
coupled electrical characteristics (25°C)

tCollector Output Current (IF = lOrnA, VCE = lOY) 4N32, 4N32A, 4N33 50 - - rnA
4N29, 4N29A, 4N30 10 - - rnA
4N31 5 - - rnA
tSaturation Voltage - Collector:'" Emitter 4N29,29A,30,32,32A,33 - - 1.0 volts
(I F = SmA, Ie = 2mA) 4N31 - .- 1.2 volts
Resistance - IRED to Phot9-Transistor (@ 500 volts) - 100 - gigaohms
Capacitance - IRED to Photo~Transistor (@ 0 volts, f = 1 MHz) - 1 - picofarad
tIsolation Voltage 60 Hz with the input terminals (diode) 4N29,29A,32,32A 2500 - - volts (peak)
shorted together and the output terminals (transistor) 4N30, 4N31, 4N33 1500 - - volts (peak)
shorted together 4N29A,4N32A 1775 - - volts (RMS) (1 sec.)
tSwitching Speeds: Ic = SOmA, IF = 200mA) Figure 1
Turn-On Time - ton - - 5 microseconds
Turn-Off Time - toff 4N29, 4N29A, 4N30, 4N31 - - 40 microseconds
Turn-Off Time - toff 4N32, 4N32A, 4N33 - - 100 microseconds
@ VDE Approved to 0883/6.80 0110b Certificate # 35025 202

TYPICAL CHARACTERISTICS 14N29-33I
100
I-
Z 10
~
-
N.C. Vee
+IOV
'"
II:
II:
~
.J
U
1.0
7
I-
~
Go
l-
S I
17
o
'":::;
N 7 NORMALIZED TO:
C(
::IE .0 I VeE = 5V
II:
IF = I MA
~ /
I
~ .00I '
... u
PULSE WIDTH ~ 1.0 ms

.000 I
•1 1.0 10. 100
IF - INPUT CURRENT - MA
SWITCHING TIME TEST CIRCUIT OUTPUT CURRENT VS INPUT CURRENT
10 1,000
"....
",-
~I
----
IF =2.0MA
I-
Z 100 ./
'"II:II:
.
C(
e //
-
IF 1.0MA
U
~
I- 1.0 /' s
I-
Z 10
i
I-
~
o
./
/'
./
= 0.5MA
'"
II:
§
U
1.0
/
,.,---
o IF o
'":::i
N
II:
~
/
C(
::IE I
V e... O. I
i I
...o
... V
/'
./ NORMALIZED TO:
VeE' 5V
IF = 1.0 MA
I
.0 I
!
/
u TA = +25°C
.0 I
-55 -15 25
I 65
I
.5 1.0 1.5 2.0
100
TA- AMBIENT TEMPERATURE _·C VF - FORWARD VOLTAGE - VOLTS
OUTPUT CURRENT VS TEMPERATURE INPUT CHARACTERISTICS
10
I-
Z
_..... A1
1'=2·r -
~
I- 10 5
./
./
'"II:II: ~
Z
'"§II: 104
~1.oIMA I-
~ L
u
I- 1.0 u
i
l-
~ 1/
./
~ 103
S
o ~ o ./ ,
'":::i
N ~r=0.5MA f- '"~ 10 2
7'
C(
::IE I
Ir C(
::IE
II: II: 7 NORMALIZED TO:
o ~ 10 I
Z I VCE = 10V
I NORMALIZED TO:
...ou VCE = 5V ...o ./ IF • 0
- J l
IF = I.OMA ...u 1.0
r7
TA = +25°C
.0 I I
.1 1.0 10 100 +~ +~ +~ +~ -1-100
VeE - COLLECTOR TO EMITTER VOLTAGE - VOLTS TA -AMBIENT TEMPERATURE - °C
OUTPUT CHARACTERISTICS NORMALIZED DARK CURRENT VS TEMPERATURE
203
SOLI05D\TE
@ D co ELECTRONICS
Photon Coupled Isolator 4N35,4N36,4N37
Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor
The General Electric 4N35-4N364N37 are gallium arsenide

infrared emitting diodes coupled with a silicon photo-transis-
tor in a dual in-line package.
FEATURES: SEABTING
PLANE
• Fast switching speeds
~r~~1
OJ
• High DC current transfer ratio
• High isolation resistance
• High isolation voltage
.• I/O compatible with integrated circuits
1M Covered under V.L. component recognition program, reference file E51868 \

INFRARED EMITTING DIODE
• Power· Dissipation TA = 25°C ~OO milliwatts
• Power Dissipation TC =25"C ~OO milliwatts MILLIMETERS INCHES
NOTES
.
(Tc indicates collector lead temperature "
1/32 from case)
.
SYMBOl
MIN. ' MAX. MIN. MAX.
A 8.38 _I 8.89 .330 _I .350
• Forward Current (Continuous) . 60 milliamps B 7.62 REF. .300 REF. 1
• Forward Current (Peak) 3 ampere C - 8.64 - .340 2

0 .406 .508 .016 .020
(Pulse width 1 usec, 300 pps) E - 5.08 - .200 3
F 1.01 1.78 .040 ,070
• Reverse Voltage 6 volts G 2.28 2.80 .090 .110
H - 2.16 - .085 4
J .203 .305 .008 .012
K 2.54 - .100 -
M - IS' - IS'
N .381 - .015 -
P - 9.53 - .375
PHOTO-TRANSISTOR R 2.92 3.43 .115 .135
S 6.10 6.86 .240 .270
• Power Dissipation TA = 25°C ~OO milliwatts
NOTES:
• Power Dissipation Tc = 25°C ~OO milliwatts 1. INSTALLED POSITION LEAD CENTERS.
<Tc indicates collector lead temperature 1/32" from case) 2. OVERALL INSTALLED DIMENSION.
• VCEO 30 volts SEATING PLANE.
• VCDO 70 volts 4. FOU R PLACES.
• VECO 7 volts
* Collector Current (Continuous) 100 milliamps
~Derate 4.Omw/oc above 25°C

~Derate 6. 7mW1°C above 25°C
TOTAL DEVICE
* Storage Temperature -55 to 150°C
• Operating Temperature -55 to 100°C.
• Lead Soldering Time (at 260°C) 10 seconds.
• Relative Huniidity 85%@85°C
• Input to Output Isolation Voltage
4N35 2500 V(RMS) 3550 V (peak)
4N36 1750 V(RMS) 2500 V (peak)
4N37 1050 V(RMS) 1500 V (peak)
• Indicates JEDEC registered values

@ VDE Approved to 0883/6.80 OllOb Certificate # 35025
204
individual electrical characteristics (25 °C) (unless otherwise specified)
I4N35-37 I
INFRARED EMITTING SYMBOL MIN. MAX. UNITS PHOTO-TRANSISTOR SYMBOL MIN. TYP.
DIODE MAX. UNITS
• Forward Voltage VF .8 1.5 volts • Breakdown Voltage V(BR) CEO 30 - - volts
(IF = 10 rnA) (IC = 10 rnA, IF = 0)
* Forward Voltage VF .9 1.7 volts • Breakdown Voltage V(BR)CBO 70 - - volts
(IF = lOrnA) (IC = 100uA, IF = 0)
TA =-5S oC
• Breakdown Voltage V(BR)ECO 7 - - volts
* Forward Voltage VF .7 1.4 volts (IE = 100uA,IF = 0)
(IF = 10 rnA)
TA = +100oC
Collector Dark Current ICEO - 5 50 nanoamps
(VCE = 10V, IF = 0)
• Reverse Current IR - 10 microamps
(VR = 6V) • Collector Dark Current ICEO - 500 microamps
(VCE = 30V, IF = 0)
Capacitance CJ 100 picofarads TA = 100°C
(V=O, f=l MHz)
Capacitance CcE - 2 - picofarads
(VCE = lOV, f= lMHz)
coupled electrical characteristics (25 °C) (unless otherwise specified)

• DC Current Transfer Ratio (IF = lOrnA, VCE = 10V) 100 - - %
• DC Current Transfer Ratio (IF = lOrnA, VCE = 10V) TA :, -55°C 40 - - %
• DC Current Transfer Ratio (IF = lOrnA, VCE = 10V) TA = +100oC 40 - - %
• Saturation Voltage-Collector To Emitter (IF = lOrnA, IC" 0.5mA) - - 0.3 volts
• Input to Output Isolation Current (Pulse Width = 8 msec)
(See Note 1) Input to Output Voltage = 3550 V (peak) 4N35 - - 100 microamps
Input to Output Voltage = 2500 V (peak) 4N36 - - 100 microamps
Input to Output Voltage = 1500 V (peak) 4N37 - - 100 microamps
• Input to Output Resistance (Input to Output Voltage = 500V - See Note 1) 100 - - gigaohms
• Input to Output Capacitance (Input to Output Voltage = 0, f = 1MHz - See Note 1) - - 2 picofarads
• Turn on Time - ton (VCC = IOV, IC = 2MA, RL = 100il) (See Figure 1) - 5 10 microseconds
• Turn offTime-toff(VCC= 10V, IC= 2MA, RL= lOOil) (See Figure 1) - 5 10 microseconds
Note 1: Tests of input to output isolation cvrrent resistance, and capacitance are performed
with the input terminals (diode) shorted together and the output terminals
(transistor) shorted together
• Indicates JEDEC registered values.
r-----1 INPUT
......J L-PULSE
TEST CIRCUIT VOLTAGE WAVE FORMS
Adjust Amplitude of Input Pulse for Output lie) of 2 mA
FIGURE 1
205
I4N35-37 I TYPICAL CHARACTERISTICS
1000
,"
,
,,
,
100 ,
~ 10
I
/ -2.4
~
!!i
Ii!" 1.0
I
/
2
0
'" i'-. t"-
3!0:
~ O
.............
~O. I ........
.......
.0 I
I
/ 6
-I. 4
:-----..
I
.000 .5
/ 10 L5 20 .2 .4 .6 BID 6 810.0
IF ~ FORWARD CURRENT - mA
20 40 60 80 100
VF - FORWARD VOLllIGE - VOLTS
1. INPUT CHARACTERISTICS 2. FORWARD VOLTAGE TEMPERATURE COEFFICIENT
,.. .
YCE"lO\f
VcE~2OV
'l "cE"IOY
,0' ~/ ,
Yca"3CN
'IV ?
YCII"2CN
. '// . /- V /
¥ca"I()I
r/v ./.V/
, VI rl NORMAUZED TO:
VCE"toV
, v.; V
TA'+~
IF • 0
=f=
rl V1/ NORMALIZED TO:
Vca"lO'J
II
TA'~ - r- i-'-
, .. II Iv -.
, . . .
T,,·AMBIENT TEMPERATURE·-C
~
., ... .. .", ,000
3. DARK ICEO CURRENT VS TEMPERATURE 4. ICBO VS TEMPERATURE
100
NORMALIZED TOo
... ·IOVOLTB 50
r, -toM'
1O.~---+-4----~-+----+-~----~
10
/'"
lJ
IF=IOmA
-
5 ----
1
g 1.0
V,, .."!Cio-.t"
i" r I
0:
V ,'f
a 5 ,
I
~s.J
t-
ir
~
o
o. I
V ,
/1 ,'//, // I
,
~mA
,
-+--- ----
lOO'C r------
:§ .05
Vj,/
,, V 5Cj.'mA ,,
, I
I
I
I
.0 I , / I
I
.00 5
, / "ioooc
",
/ ,
, / "
I
.00.01
~
.02
,-
.04.06 .08 0.1 .2
Ii
. 4 . 6 . 8 1.0
VeE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
2.0
5. OUTPUT CHARACTERISTICS '6. OUTPUT CHARACTERISTICS
206
(4N35-37I
II! 1000
I I I IlOO
~TOo f-
Yca'1OV
I, -IOU
./
V VCI-KN
... V
1.0 100
I
l/ 110 V
,/
/ 1;;/
I
./ ./
~
",/ I
/
/ /'
V. . .
.GCI
k( J V
.oaoe / De /
~ V'
eo. 10 lOCI
,,/
.1 .4 . . . . ,.0 241110 10 «I .2 .4 .... , 2 4 1 . 1 0 10 «I eo 10 100
I, -INI'\II' cuMlNT-1IA I,-HIUT CURRENT-..A
7. OUTPUT CURRENT VS INPUT CURRENT 8. OUTPUT CURRENT - COLLECTOR TO BASE

VS INPUT CURRENT '
• • I,-so.a _ t-
- -- 1-20"", - r-
2
1.·-.
I .•
V l.lL
1"" ...
• ..
• 1,-5_- t-
..
--
-1
• / ./ I I
r-- II II
-- --,...
.1
• ~"'= ~
!p. ~~~
.I
I I lip ...... f-
I 1"·-
-
~zroYO:
P- re-.::: ...
'" I 1,-1l1li\
-
11:<''''
I, .JOIttA
.02 T• • ,
I ... oft
• 100 "'"10 ....
8. OUTPUT CURRENT VS TEMPERATURE 10. OUTPUT CURRENT VS BASE EMITTER
RESISTANCE
10
'r--.....
i 4",
~
6~
0
-
r--
- -R,.·'KA
.5O
%
NOMIAUZED
'i-..
'4ft ~ 1, -10InA
I
I
.........
11:0''''
--
......
I
I
2
........
.........
......r--
...... ...............
I
.... NORMAUZED ----
t. FOR ",. 20MA ~
-- '-
! I.~ ...... ........ -.......c..... ...... fo-
.......
I .6 r -
NORMALIZED TO:
Yet: '10 YOLTS
Icm' 2111A
..........
"- ....... ..... r--, V
V
;'
~ 4- RL'IOOR - - • ./ I/NORMAUZED fcIf.

.... "", '''''Me
-
NCRIALIZEO "10:
I .2
RL"OOA
1 1 1
1""0. .....
r---- RL 'IOA
.2
,,( /
.....-.zEO'", _ .... , _
f'ORl,-1OInA ",-ooA
............
IF -IOnIA
I
.
I I
I I
.2 '" .6.81.0 2 4 6 810 20 40 6080 100 10 10 50 100 100 500 1000
ICIO-O\JTPIJ1' CURRENT-IlIA " " . EXTERNAL lASE RESlSTOft..KA
U. SWITCHING TIMES VB OUTPUT CURRENT 12. SWITCHING TIME VS RBE
207
SOLID STATE
@ D co ELECTRONICS
Photon Coupled Isolator 4N38 , 4N38A . SYMBOl.
MILLIMETERS INCHES
NOTES
pa As Infrared Emitting Diode & NPN Silicon Photo-Transistor A
MIN. MAX.
8.387.62JREF.8.89./
MIN.
.330 J
MAX.
.350
B .300 REF. 1
The General Electric 4N38 and 4N38A consist of a gallium C
D
-
.406
8.64 -
.016
.340
.020
2
.508
arsenide infrared emitting diode coupled with a silicon photo E - 5.08 - .200 3
F 1.01 1.78 .040 .070
transistor in a dual in-line package. G 2.28 2.80 .090 .110
~~:
H - 2.16 - .085 4
J .203 .305 .008 .012
FEATURES: K 2.54 - .100 -
• Fast switching speeds 3~4 -i---="'E'!!l
M
N
-
.381
15
-
0 -
.015
150
-
• High DC current transfer ratio L - - J P - 9.53 - .375
R 2.92 3.43 .115 .135
• High isolation resistance S 6.10 6.86 .240 .270
• 2500 volts isolation voltage NOTES:
1. .INSTALLED POSITIDN LEAD CENTERS.
• I/O compatible with integrated circuits " 2. OVERALL IN.STALLED DIMENSION.
tAl Covered under U .L. component recognition program, reference file E51868 3. THESE MEASUREMENTS ARE MADE FROM THE
tlndicates JEDEC registered values SEATING PLANE.
absolute maximum ratings: (25°C) (unless otherwise specified) 4. FOUR PLACES.
tStorage Temperature -55 to 150°C. Operating Temperature -55 to 100°C. Lead Soldering Time (at 260°C) 10 seconds.
INFRARED EMITTING DIODE PHOTO·TRANSISTOR

t Power Dissipation *150 milliwatts t Power Dissipation **150 milliwatts
tForward Current (Continuous) 80 milliamps tVCEO 80 volts
tForward Current (Peak) 3 ampere tVCBO 80 volts
(Pulse width 300psec, 2% duty cycle) tVECO 7 volts
t Reverse Voltage 3 volts . Collector Current (Continuous) 100 milliamps
- *Derate 2.0 mW/oC above 25°C ambient. **Derate 2.0 mW/oC above 25°C ambient.
tTotal device dissipation @TA = 25°C. Po 250 mW. tDerate 3.3 mW/oC above 25°C ambient.
INFRARED EMITTING TYP. MAX. UNITS PHOTO·TRANSISTOR MIN. TYP. MAX. UNITS
DIODE
tForward Voltage 1.2 1.5 volts tBreakdown Voltage - V(BR)CEO 80 - - volts
(IF = lOrnA) (Ic = 1mA, IF = 0)
tBreakdown Voltage - V(BR)CBO 80 - - volts
(Ic ;= lpA, IF = 0)
tReverse Current - 100 microamps tBreakdown Voltage - V(BR)ECO '7 - - volts
(VR = 3V) (IE = 100pA, IF = 0)
tCollector Dark Current - ICEO - - 50 nanoamps
(VCE = 60V, IF = 0)
Capacitance 50 - picofaqlds tCollector Dark Current - ICBO - - 20 nanoamps
V= O,f= 1 MHz (V CE = 60V, IF = 0)
·coupled electrical characteristics (25°C)

tlsolation Voltage 60Hz with the input terminals (diode) 4N38 1500 - - volts (peak)
shorted together and the output terminals (transistor) 4N38A 2500 - - volts (peak)
shorted together. 4N38A 1775 - - volts (RMS) (1 sec.)
t Saturation Voltage - Collector - Emitter (I F =20mA, Ic =4mA) - - 1.0 volts
Resistance - IRED to Photo·Transistor (@ 500 volts) - 100 - gigaohms
Capacitance - IRED to Photo-Transistor (@O volts, f = 1 MHz) - 1 - picofarad
DC Current Transfer Ratio (IF = lOIllA, VCE = 10V) 10 - %
Switching Speeds (VCE = 10V, Ic, = 2mA, RL = lOOn)
Turn-On Time - ton - 5 - microseconds
Turn-Off Ti:me - toff - 5 - microseconds
@ VDE Approv~d to 0883/6.80 OllOb Certificate # 35025
208
TYPICAL CHARACTERISTICS 14N38, 4N38A I
...z
'"
10
V'
". - ...z
10
'"
-
0:: 0::
0::
a /
0::
IF = 20mA
-
:;)
U
...
:;)
1.0 ...
:;)
...
--
~
...
Q.
Q.
L
5 ;:)
IF =10mA
o ~ o 1.0
o
./
'":::; '":::;
----
N N
; o. I / NORMALIZED TO:
VCE = 10 VOLTS
'"o
:Ii IF =5mA
0::
o / IF =10mA 0::
Z
H
I
::lu
/
/ Z
H
I
U
.
o
NORMALIZED TO:
VCE • 10 VOLTS
IF = 10mA
r-----
TA = +25·C
O. I I
0.0I I 2 4 6 8 10 20 40 60 80 100 -55 -15 +25 +65 +100
I F -INPUT CURRENT - mA TA - AMBIENT TEMPERATURE _·C
1. OUTPUT CURRENT VS INPUT CURRENT 2. OUTPUT CURRENT VS TEMPERATURE
1,000
,..- 10
~O~~
~ .... ·r
/ ...z ~
r""
'"E
100
// '"0::0:: ......... I
IF = 10~AI
...
Z
I
10
;:)
U
... 1.0
V'
'"0::0::
/
;:)
:;)
...
Q.
I ,,;
u 5
i
;
1.0
II o
'"::::;
/ i/ .,. .... ~
IF' 5mA
I /i/
N
~ O. I ; o. I NORMALIZED TO:
/
0:: I
.......
I
o VCE = 10 VOLTS
Z
I I IF = 10mA
.0 I
...::l J /1
I
.5
/ 1.0 US
VF - FORWARD· VOLTAGE - VOLTS
2.0
u
0.0 I
.01
1I 1/
.I I 10
VCE - COLLECTOR TO EMITTER . VOLTAGE - VOLTS
I I II
I 100
3. INPUT CHARACTERISTICS 4. OUTPUT CHARACTERISnCS
300
~.
......
./' VCE = 60V- '" 250
:t.
t'.....
...z
I
.............
./ '"0:: "CB·' 10V
'"
./ IF' 50mA
~ 200
~
u
./ '"
(/)
~
I '"
III 150
L
0::
I? ~
NORMALIZED TO: u
I ./ ~ 100
VCE = 60 VOLTS
IF = 0
5
u IICB " lOll
TA = +25·C
I
"- IF "IOmA
I 2 50 "CB"IOV
... u
IF" 5mA
o
+25 +50 +75 +100 +125 -50 -25 0 +25 +50 +75 +100
TA - AMBIENT TEMPERAT.URE _·c TA -AMBIENT TEMPERATURE _·C
5. NORMALIZED DARK CURRENT VS TEMPERATURE 6. COLLECTOR BASE CURRENT VS T~MPERATURE

5a..IDSTATE
@. .© ELECTRONICS
MILLIMETERS INCHES
SYMBOl NOTES
Photon Coupled Isolator 4N39,4N40 MIN. MAX. MIN. MAX.
Ga As Infrared Emitting Diode & Light Activated SCR JLr~ E~

The General Electric 4N39 and 4N40 consist of a gallium arsen- C U '
SEATlNG
t1-"1 r 1-- A-I - A
B
C
D
E
8.38 I 8.89/ .330
-
-
7.6,2 REF.
.406
8.64
.508
5.08
.016
-
J .350
.300 REF.
- I .340
.020
.200
1
2
3
F 1.01 1.78 .040 .070
ide, infrared emitting diode coupled with a light activated silicon 1· I 3 1. t G 2.28 2.80 .090 .110
contro-ne d rectl·fi·
ler m a d u a1.m-line pack age. 6.1
B C ITOPVIEWI S H - 2.16 - .085 4
,M I 4
J .203 .305 .omi '.012
absolute maximum ratings _- ~ K

M
2.54
-
-
15°
.100
-
-
15°
-1H~ ~F:
N .381 - .015 -
'-.-l:!
2'..f-Jnt{!6i
INFRARED EMITTING DIODE P - 9.53 - .375
r----., R R 2.92 3.43 ' .115 .135
tpower Dissipation (-55°C to 50°C) *100 milliwatts
s
t I S 6.10 6.86 .240 .270
tForward Current (Continuous) 60 milliamps NOTES:
(-55°C to 50°C) I ' I G 1. INSTALLED POSITION LEAD CENTERS.
tForward Current (Peak) (-55°C to 50°C) 1 ampere 3+ 4 2. OVERALL INSTALLED DIMENSION.
(100tlsec 1% duty cycle) ~--... 3. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE.
tReverse Voltage (-55°C to 50°C) 6 volts 4. FOU R PLACES.
*Derate 2.0mW/oC above 50°C.
TOTAL DEVICE
tStorage Temperature Range -55°C to 150°C
PHOTO-SCR
tOperating Temperature Range _55°C to 100°C
tOff-State and Reverse Voltage 4N39 200 volts tNormal Temperature Range (No Derating) -55°C to 50°C
(-55°C to +100°C) 4N40 400 volts tSoldering Temperature (1/16" from case, 1 O,seconds) 260°C
tPeak Reverse Gate Voltage (-ssOCto 50°C) 6 volts
tTotal Device Dissipation (-55°C to 50°C), 450 milliwatts
tPirect On-State Current (-55°C to 50°C) 300 milliamps
tSurge (non-rep) On-State Current (lOOp-sec) 10 amps tLinear Derating Factor (above 50°C), 9.0mWtC
(-55°C to 50°C) , tSurge Isolation Voltage (Input to Output).
tPeak Gate Current (-55°C to 50°C) 10 milliamps lsOOV(peak) 1060V(RMS)
tOutput Power Dissipation (-55°C to sOOC)**400 milliwatts tSteady-State Isolation Voltage (Input to Output).
**Derate 8mW/oC above 50°C. 9s0V(peak) 660V(RMS)
individual electrical characteristics (25°C) (unless otherwise specified)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-SCR MIN. MAX. UNITS
tForward Voltage VF 1.1 1.5 volts tPeak Off-State Voltage - VOM 4N39 200 - volts
(IF = lOrnA) (RGK = 10Kn, TA = 100°C) 4N40 400 - volts
tPeak Reverse Voltage - VRM 4N39 200 - volts
(TA = 100°C) 4N40 400 - volts
tOn-State Voltage - VT - 1.3 volts
(IT = 300mA)
tOff-State Current - 10 4N39 - SO microamps
t Reverse Current IR - 10 micro amps (Vo=200V,TA=l00oC,IF=O,RGK=lOK)
(VR = 3V) tOff-State Current - 10 4N40 - 150 microamps
- (Vo=400V,TA=IOO°C.IF=O,RGK=lOK)
tReverse Current - IR 4N39 - SO microamps
(VR =200V, TA = 100oC,IF =0)
tReverse Current - IR 4N40 - 150 microamps
(VR =400V, TA = 100°C,IF =0)
Capacitance SO - picofarads tHolding Current - IH - 200 microamps
(V = O,f = 1MHz) (V FX = sOV, RGK = 27Kn)

/
MIN. MAX. UNITS
tlnput Current to Trigger VAK = SOY, RoK = 10Kn 1FT - 30 milliamps
VAK = 100V, RoK =27Kn 1FT - 14 milliamps
tlsolation Resistance (Input to Output) Vio =sOOVnc rio 100 - gigaohms
tTum-On Time - VAK =sOV, IF = 30mA, RcK = 10Kn, RL =200n. ton - SO microseconds
Coupled dv/dt, Input to Output (See Figure 13) 500 - volts/microsec.
Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) - 2 picofarads
tlndicates JEDEC Registered Values.

..
'Ai Covered under U.L. component recogmtlon program, reference fde E51868
TYPICAL CHARACTERISTICS 14N39,4N401
2
NORMALIZED TO
VAK -SOY
50
10
~ t=
RGK-IOK
8 RGK .. 300.n."
TA -2S·C
6
0
RGk .31?OJ\
• IK
• ~
2
"
"'" I
10K I
0 10K •
6
27K
27'
r-
56'
"" :
......... 56K
.I • NORMALIZED TO
YAK ~50V
10 50 100 200 ..00
RGK ·IOK
VAK -ANODE TO CATHODE VOLTAGE-WLTS
TA "25·C
J
·60 40 -20 o 20 40 60 BO 100 120
TA -AMBIENT TEMPERATURE-~
FIGURE 1. INPUT CURRENT TO TRIGGER
VS. ANODE-CATHODE VOLTAGE
VS. TEMPERATURE
100
NORMALIZED TO
VAK '"5OY
RGK ·'OK
T =2&'C
0
' .....
0
!, r-- RGK ·300.n.
6
......
IK
4
NORMALIZEO TO
VAK-SOY ) ..
~ •
VIII/,
.!lJH:
fllfT) !....
AGk-IOK
TA ·2~-C
C
~~
"
..........
~
...... ........
- 10K
-
8
"'" {fIlii! .6
(P- I PERC: :NTI ~
.. ............:
_56~
7.
..
. '
J
4 6 810 20 40 60 100 200 ~ 1000
PULSE WIDTH - MICRO SECONDS
FIGURE 4., INPUT CURRENT TO TRIGGER

VS. PULSE WIDTH
-. -2,
"
TA - AMBIENT T[MPERATURE-"C
FIGURE 3. INPUT CURRENT TO TRIGGER 1000
DISTRIBUTION VS. TEMPERATURE
.. 100
:M
22
I
• 10
I
I:
~ 16
\ \
\ VAK" ~OVOLTS
ton "td +t,
I I
:0
\
..l!i " \ "0.'" \
'r=IJ'I'C
J
12 :----- _"' 0.1
z
~ 10
.\.. '\..
~ r--.......
-- --
_5 8
~~ I
56K
--~
-
- .0 I
I
O~ W 'D 3.0
10 20 50 40 50 60 70 80 90 100 .. V,'_RD'VOLT_-VOLTS
IF -INPUT CURRENT - MILLIAMPERES
FIGURE 6. INPUT CHARACTERISTICS

FIGURE 5. TURN-ON TIME VS. INPUT CURREN I IF VS. VF
211
14N39, 4N40 I IT rl~AL ~MAI1A~ I.t: 11 10) I I~o) VI'" VU I rUI \o)~I1J
I0,00O '000
F
600 r---
NOTE: (t) LEAD TEMPERATURE MEASURED AT THE WIO,£5T
OF THE seR ANOOE LEAO
~TtON
~ (2) AMBIENT TEMPERATURE MEASURED AT A POINT
I--
TO'=~"
liZ'" FROM THE DEVICE
RGK ·300.n.
I:~:~"r:'-O<
'000
I- '"'-
- ~
- - --
0
/'"
.........
.........
......... ::--..... t-- _101<
I-'"
--
2
27_
,/
10 20 40 100
56K
I---
VAK' 5OV
FIGURE 8. MAXIMUM TRANSIENT THERMAL
1
0
-40 -20 o 20 40 60 80 '00
IMPEDANCE
TA -AMBIENT TEMPERATURE--c
FIGURE 7. HOLDING CURRENT

VS. TEMPERATURE
'00
~,
10.000
5000
90
\~,
\,' ,"
NORMALIZED TO 80
VAK -50v ~
TA ·25·C
J ~10
I
...
~ \'\
0
::>
!c
/
/
/
::i 60
.
l
.... 50
\\\ ,
0
/ I i
~ 40
\\ \ "
0
<t' \\ \ '~ ~ELEADTEMP
DC CURRENT
" \ I',
230
If f
i AMBIENT TEMP ~~ ,
)( HALF-SINE w:~~
120
0
400V / i- 10 \ \
\. \. " ' ....
AMB TEMP" ANODE LEAO TEMP
OCCURRENT '12 SINE WAVE AVERAGE
5
0,2 0,4 0.6 O.S 1.0
ON STATE CURRENT - AMPERES
,
o
/
25 50 75
FIGURE 10. ON-STATE CURRENT VS.
100
fA-AMBIENT TEMPERATURE-·C MAXIMUM ALLOWABLE TEMPERATURE
FIGURE 9. OFF-STATE FORWARD
CURRENT VS. TEMPERATURE
1000 2
500 , ,,(/
.8
" '-... ....... ~ .6 rl
............... ['..... I .4
P.GK '300.n.""S F=I ..

0: .2
II
0
~
r-...
...........
.
:IE
, 0 .I
.....0 8
""- 'I
'K-......., z
~
0:
.0 • ... JUNCTION TE~PERATURE" 25°C
B .0 4
5 ...
E r-IJUJCTl~N ~E~PElAT~REI. 'O~.C
",""-. " . . .0 2
""""-"'" ~ '"""",-
I
Z
o
,
'0 -
..
~ 0.0
" " ~7K .., - INCREASES TO FORWARD
25 50
'" 0. 75
56K
100
o
'''I--
1.0
SREA_OVER VOLTAGE
2.0
v T-ON-STATE VOLTAGE -VOLTS
3.0 4,0
TA -AMBIEN~ TEMPERATURE--t
FIGURE 12. ON-STATE

FIGURE 11. dv/dt VS.TEMPERATURE CHARACTER.ISTICS
212
\4N39,4N401
TYPICAL APPLICATIONS
LOAD
10.0., T2L COMPATIBLE, SOLID STATE RELAY 47..n.
Use of the 4N40 for high sensitivity, 2500V iso- O.lpF ''cONTACT''
lation capability, provides this highly reliable solid 220VAC
state relay design. This design is compatible with
74, 748 and 74H series T2L logic systems inputs
and 220V AC loads up to lOA. IN5080 (4)
INDICATOR
25W LOGIC INDICATOR LAMP DRIVER LAMP
The high surge capability and non-reactive input characteristics

of the 4N40 allow it to directly couple, without buffers, T2 L 100.1\.
and DTL logic to indiCator and alarm devices, without danger 220VAC
of introducing noise and logic glitches. O.I}lF
400V SYMMETRICAL TRANSISTOR COUPLER
Use of the high voltage PNP portion of the4N40 provides a 400V.transistor

capable of conducting positive and negative signals with current transfer INPUT
ratios of over 1%. This function is useful in remote instrumentation, high
:Y L
4N40~
r-- ---- --1
:: . I
-- ---- _J
OUTPUT
voltage power supplies and test equipment. Care should be taken not to ex-
ceed the 400 mW power dissipation rating when used at high voltages.
FIGURE 13
COUPLED dV/dt - TEST CIRCUIT
Vp = 800 Volts
tp =.010 Seconds
f = 25 Hertz
TA =250 C
Vp
f T---
, .6jVp
~
EXPONENTIAL OSCILLOSCOPE
RAMP GEN.
213
SOUDsmre
@ b ©ELECTRONICS
r---' MILLIMETERS INCHES
::PIi~E
SYMBOL NOTES
MIN. MAX. MIN. MAX.
Photon Coupled Isolator H11A1. H11A2 A 8.38 _I 8.89 I .330 J .350
Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor <>-t __a:

3 4
B
C -
7.62 REF.
8.64 -
.300 RE~.
.340
I
2
The General Electric HllAl and HUA2 are gallium arsenide

infrared emitting diodes coupled with a silicon photo-transistor in
"~ .
~r-I-~ T1-A,n.
JPLANEK E 1- A -
A I~
0
E
F
G
.406
-
1.01
2.28
.508
5.08
1.78
2.80
.016
-
.040
.090
.020
.• 200
-070
.110
3
- -
a dual in-line package. 1 ;;:a.. I
C
3 ,.
(TOP VIEW)
t
S
H
J .203
2.16
.305 .008
.085
.012
4
K 2.54 - .100 -
~ M - IS" - 15°
absolute maximum ratings: (25°C) 11
814
:::1r" ·vvv
6
. N
P
.381
- I
- .015
-
-
.375
INFRARED EMITTING DIODE \ ..::=- -.l:l f- --j f-
H F
R 2.92 I 9.53
3.43 .115 .135
.. S 6.10 6.86 .240 .270
~ l-~
' I I
Power Disslpation *100 milliwatts R
NOTES:
Forward Current (Continuous) 60 milliamps ~. , 1. INSTALLED POSITION' LEAD CENTERS.
2. OVERALL INSTALLED DIMENSION.
Forward Current (peak) 3 ampere
G I' 3. THESE MEASUREMENT$ ARE MADE FROM THE
(Pulse width lStsec 300 P Ps) -11_0 SEATING PLANE. 4. FOUR PLACES.
Reverse Voltage 3 volts
TOTAL DEVICE
*Dexate 1.33mW/oC above 2SoC ambient
Storage Temperature -55 to 150°C
Operating Temperature -55 to 100°C
PHOTO-TRANSISTOR Lead Soldering Time (at 260°C) 10 seconds
Power Dissipation **150 milliwatts Surge Isolation Voltage (Input to Output).
VCEO 30 volts Hll Al 2500V(peak) 1770V(RMS)
VCBO 70 volts HllA2 1500V(peak) 1060V(RMs)
VECO 7 volts Steady-State Isolation Voltage (Input to Output).
Collector Current (Continuous) 100 milliamps HllAI 1500V(peak) 1060V(RMS)
**Derate 2.0mW/oC above 2SoC ambient HI1A2 950V(peak) 660V(RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-TRANSISTOR MIN. TYP. MAX. UNITS
Forward Voltage 1.1 1.5 volts Breakdown Voltage-V (BR)CEO 30 - - volts
=
(IF lOrnA) (Ic = lOrnA, IF = 0)
Breakdown Voltage-VWR)CBO 70 - - volts
(Ic ;:: 100StA, IF ;:: 0
Reverse Current
(VR:;:: 3 V)
- 10 microamps Breakdown Volt age-VWR)ECO
(IE;:: 100StA, IF = 0
7 - - volts
Collector Dark Current-IcEO - 5 50 nanoamps

(VCE = lOV, IF =0)
Capacitance .50 - picofarads Capacitance - 2 - picofarads
=
(V O,f= 1 MHz) (VCE = lOV,f= 1MHz)

DC Current Transfer Ratio (IF = lOrnA, VCE = lOy) HIlA! 50 - - %

HIIA2 20 - - %
Saturation Voltage - Collector to Emitter (IF = lOrnA, Ic = 0.5mA) - 0.1 0.4 volts
Isol:ttion Resistance (Input to Output Voltage = 500Vn c) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = 0,£ = IMHz) - - 2 picofarads
Switching Speeds:
Rise/Fall Time (VCE = lOY, ICE = 2mA, RL = lOOn) - 2 - microseconds
Rise/Fall Time (VCB = lOY, leB = SOStA, RL = lOOn) - 300 - nanoseconds
'" Covered under U.L. component recognition program, reference file E5 I 868
.~ VDE Approved to 0883/6.80 0110b Certificate # 35025
214
\H11A1, H11A2\
10
v
;
IF~2OrnA
- t--
V
NORMALIZED TO
VCE "IOV
~
1.0
V--
IF~IOmA
- -- r-
c
I V
V
IF~IOmA
i
~
IF=5mA
I---. r--
, 0.I
~ NC:AMAl..IZED TO I
"cE"OV
IF=tOmA
TA-25°C
.0I
0.1 55
- - 15 25
I 65 100
I 10 100 TA - AMBIENT TEMPERATURE _·C
IF - INPUT CURRENT - m A
OUTPUT CURRENT VS TEMPERATURE
OUTPUT CURRENT VS INPUT CURRENT
10
,
1000
,,
,, .- IF=5OmA
100
1/
IF,lJ
-II
/' I /
I /
.....
~AL
/
" 10
E
...z /
~ 1.0
B I NORMALIZED m.
c VCE=IOV
!'"
fi' 0 .I I IITmj
I
.0I 100
I 10
VCE - COLLECTOR TO. EMITTER VOLTAGE - VOLTS
.0I OUTPUT CHARACTERISTICS
I
/ 1.0
VF - FORWARD VOLTAGE - vOLTS
1.5 2.0
INPUT CHARACTERISTICS
v
""
I'.,
--
l'--........
t-
t-- r-RL"'KIl
,,.
~ /
V
0
'"
t-- NORMAL,IZED TO
",'"
r---...
........ '"......... r-
!!i
u
10
V
V
"cS-IOV
r-- VCE =!OVOlTS t--.... RL"OOIl I- [7

Ic£0"2mA
Ion =toff" 3"sec r----- I
RL "'lao.
t-- RL-1OOa
~o I.1 I I I I I
- 10 10 ·100 10 100
l CEO · OUTPUT CURRENT - mA IF-INPUT CURRENT-rnA
SWITCHING TIMES VS OUTPUT CURRENT OUTPUT CURRENT (ICBO) VS INPUT CURRENT
215
SOUDSTATE
@ D co ELECTRONICS
MILLIMETERS INCHES
Photon Coupled Isolator H11A3 , H11A4 SVMBOL

MIN. MAX. MIN. MAX.
NOTES
~j}rt::
A 8.38 -' 8.89 .330.1 . . 350
B 7.62 REF. .300 REF. 1
Ga As Infrared Emitting Diode & NPN Silicon Plloto-Transistor C - 8.64 - .340 2
The General Electric HllA3 and HllA4 are gallium arsenide,

ILtJ:
L __
30-+- .J 4
D
E
.406
-
.508
5.08
.016
-
.020
.200 3
infrared emitting diodes coupled with a silicon photo-transistor in S;t:~~G A-I

1-
F
G
1.01
2.2B
1.78
2.80
.040
.090
.070
.110
~j T 3 1. t
H - 2.16 - .085 4
a dual in-line package. JJ-.rK 1- J
K
.203
2.54
.305
-
.008
.100
.012
-
absolute maximum ratings: (25°C) ---.-'-r==1--=-~'1 C (TOP VIEW) S M - 15'
-
- 15'
-
~4
N .381 .015
B 6-.1 P - 9.53 - .375
r-IN_F_R_A_R_E_D__
EM__
IT_T_IN_G __________________~l1
__D_IO_D_E R
S
2.92
6.10
3.43
6.86
.115
.240
.135
.270
Power Dissipation *100 milliwatts .---::~~ NOTES:
Forward Current (Continuous) 60 ~amps \ 1. INSTALLED POSITION LEAD CENTERS.
Forward Current (peak) 3 ampere 3. THESE MEASUREMENTS ARE MADE FROM THE
(Pulse width lJ,LSec 300 P Ps) SEATING PLANE.
4. FOUR PLACES.
*Derate 1.33mW/oC above 2SoC ambient. TOTAL DEVICE
PHOTO-TRANSISTOR
Lead Soldering Time (at 260°C) 10 seconds
Power Dissipation **150 milliwatts Surge Isolation Voltage (Input to Output).
VCEO 30 volts HllA3 2500V(peak) 1770V(RMS)
VCBo 70 volts HllA4 l500V(peak) 1060V(RMs)
VEco 7 volts Steady-State Isolation Voltage (Input to Output).
Collector Current (Continuous) 100 milliamps HllA3 lSOOV(peak) 1060V(RMS)
**Derate 2.0mW/oC above 2SoC ambient. HlIA4 950V(peak) 660V(RMS)

Forward Voltage 1.1 1.5 volts Breakdown Voltage- V(BR)CEO 30 - - volts

(IF = lOrnA) (Ie = lOrnA, IF =0)
Breakdown Voltage - V(BR)CBO 70 - - volts
(Ic = 100J,LA, IF =0)
Reverse Current - 10 microamps Breakdown Voltage - V(BR)ECO 7 - - volts
(VR =3Y) (IE =100J,LA, IF =0)
Collector Dark Current - IeEO - S 50 nanoamps
(VCE = lOY, IF =0)
Capacitance 50 - picofarads Capacitance - 2 - picofarads
(V =O,f = lMHz) (VCE = lOY, f= IMHz)

MIN. ~YP. MAX. UNITS
DC Current Transfer Ratio (IF = lOrnA, VCE = lOy) HllA3 20 - - %

HllA4 10 - - %
Saturation Voltage - Collector to Emitter (IF =lOrnA, Ie =O.SmA) - 0.1 0.4 volts
Isolation Resistance (Input to Output Voltage::;: 500Voc ) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage O,f=: IMHz) = - - 2 picofarads
Switching Speeds: =
Rise/Fall Time (VCE lOY, ICE = 2mA, RL = lOOn) - 2 - microseconds
=
Rise/Fall Time (VeB lOY, IeB =50J,LA, RL lOOn) = - 300 - nanoseconds
'" Covered under U.L. component recognition program, reference file E51868
@ VDE Approved to 0883/6.80 OllOh Certificate # 35025
. , . 216
IH11A3, H11A41
-
10
-
If-2QmA
1/ t--
V
!z
f
a
!
1.0
V
NORMALIZED TO
VCE"IOV
lr"IOmA
I--
IF"'1OmA
- t---
r;::::::
I
IF"~
V
, 0 .I
V ~ !--.
~ NORMALIZED TO'
1IcE-IOV
IF"IOmA
TA"'ZS-C
.01 -15 25
I 65 100
I 0 100 1A - AMBIENT TEMPERATURE _·C
IF - INPUT CURRENT - mA
10
1000
, ,,
, ,, I F c 50mA
100
V
v
IF-1J
~Ll
.. 10
/' I
r
I
;I
~L
/
E
,
0-
Z
/
a~
1.0
I NORMAUZEO TO:
o VCE~IOV
;"
"~ 0 .I
IllTi
/
.0I
10 100
VeE - COLLECTOR TO EMITTER VOLTAGE - ,,{OLTS
.001 0
/ 1.0
VF - FORWA~O VOLTAGE - VOLTS
1.5 2Q
100
!!!'" .
v
.
;:
~
10
t--.
f'... - I- ,,
c V
~ ~
~
z
l'--........
t-- t- RL "IKe
ia 10
/
o.
~ 10
r---.'" i'-.. v
....
r- NORMALIZED TO ...... l7 "cs- IOV
.......
,
t-- VeE "IOVOLTS
ICEo""2mA
ton =toft " 3,.sec
t--.
"'r-.-.
RL"ooe
I
RL"'IOD
t- V
~ I-- RL"IDDA
~o .I
I I I I I
SJ .1 1.0 10 10 100
lCEO- OUTPUT CURRENT - rnA IF-INPUT CURRENT - mA
SWITCHING TIMES VS OUTPUT CURRf;NT OUTPUT CURRENT (ICBO) VS INPUT CURRENT
217
SOLID STATE
-@ D co ELECTRONICS
Photon Coupled Isolator HllA5
:: ri~l
30--1-
I
L __ J
I
:
4
SVIVf!Ol.
A
B
C
MILLIMETERS
MIN.
8.38
-
I
7.p2 REF.
MAX.
8.89
8.64
INCHES
MIN.
;330
-
J
MAX.
,350
.300 REF,
.340
NOTES
1
2
A-I
D .406 ,508 .016 .020
The General Electric HllA5 is a gallium arsenide, infrared emit-
{:tJ
SEATING
E - 5.08 - .200 3
ting diode coupled with a silicon photo-transistor in a dual in- JPL~E:1 \- F 1,01 1.78 .040 ,070
~c;..I~NI G 2,28 2,80 .090 ,110

line package. H - 2,16 "- ,085 4
,oos
T-
J .203 .305 .012
absolute maximum ratings: (25°C)
B C
3
(TOP VIEW)
1. t S
K
M
2.54
-
-
15°
.100
-
-
15°
N .381 - ,015 -
INFRARED EMITTING DIODE 1 ~4 ~ - .375
Power Dissipation *100 milliwatts

M
~
6 P
R
S
2,~
6.10
I 9.53
3.43
6,86
.115
.240
,135
,270
Forward Current (Continuous) 60

3
milliamps ~'. 1 i-jH~1 ~F: NOTES:
Forward Current (peak) ampere
(Pulse width 1ltsec 300 P Ps) it I,
2, OVERALL INSTALLED DIMENSION.
,3. THESE MEASUREMENTS ARE MADE FROM THE
, SEATING PLANE.
Reverse Voltage 3 volts G- I' 4. FOUR PLACES,
--II-D
*Derate 1.33mW/oC above 25°C ambient.
TOTAL DEV.ICE
PHOTO-TRANSISTOR
Power Dissipation **150 milliwatts Operating Temperature -55 to 100°C
VCEO 30 volts Lead Soldering Time (at 260°C) 10 seconds
VCBO 70 volts Surge Isolation Voltage (Input to Output).
VECO 7 volts 1500V(peak) 1060V(RMS)
Collector Current (Continuous) 100 milliamps Steady-State Isolation Voltage (Input to Output).
**Derate 2.0mW/oC above 25°C ambient. 950V(peak) 660V(RMS)

INFRAREO EMITTING DIODE TYP. MAX. UNITS PHOTO-TRANSISTOR MIN. TYP. MAX. UNITS
Forward Voltage 1.1 1.7 volts Breakdown Voltage - V(BR)CEO 30 - - volts
(IF = lOrnA) (Ic = lOrnA, IF = 0)
(Ic = 1001tA, IF = 0)
(VR =3Y) (IE = 1001tA, IF =0)
Collector Dark Current - ICEO - 5 100 nanoamps
(VCE = lOY, IF = 0)
Capacitance 50 - picofarads Capacitance - 2 - picofarads'
(V = O,f =1MHz) (VCE= 10V,f= 1MHz)

DC Current Transfer Ratio (IF = lOrnA, VCE = lOy) 30 - - %

Saturation Voltage - Collector to Emitter (IF = lOrnA, Ic = 0.5mA) - 0.1 0.4 volts
Isolation Resistance (Input to Output Voltage = 500VDd 100 - - gigaohms
lnput to Output Capacitance (Input to Output Voltage = O,f = IMHz) - - 2 picofarads
Switching Speeds: Rise/Fall Time (VCE = lOY, IcE'= 2mA, RL = lOOn) - 2 - microseconds
Rise/Fall Time (VCB = lOY, ICB = 501tA, RL = lOOn) - 300 - nanoseconds
.", Covered under U. L. component recognition program, reference ftle E51868

@ VDE Approved to 0883/6.80 01 lOb Certificate # 35025
218
v
t,'OOmA
- r-
~
5
I
LO
V
NORMALIZED TO
VCE"'OV
IF-lOrnA
~
IF=101nA
- r---
r--
IF'5mA
i
, 0 .I
~
V
V
NORMALIZED TO'
IIcE"OV
.r:==:==::
r--
IF-lOrnA
TA'"25·e;
.0I -
0. 1 55 -15 25
I 65
TA - AM8!£NT TEMPERATURE - 'C
100
I 10 100
J F - INPUT CURRENT - mA
10
,, " IF'!IOmA
100
" V
v IF.1J
"';'-11
.. 10
/ 7
7 17
-;
~~L
I
e
,
.... /11
~
a 1.0
II I NORMALlZEQ 10:
o Vcc'ov
0:
;0:
~ OJ
II
I Iri,omj
I
.0I
, '0 100
VCE- COLLECTOR 10 EMITTER VOLTAGE-VOLTS
I
.5
/LO 1.5
YF-FORWARO VOLTAGE - VOLTS
2.0
100
v
V
r-...
r-....
~~
- .......
t-
r-- t-RL'IKO
II
/
f'. r--""
r- NORMALIZED TO '" .....
"
17 VcB'IOV
t-- VCE -IOVOlTS

ICEo·2mA
ton '" toff =3",sec
........ r-.....
r--
R t -1000.
I
Rt- IOA
V
~Rl'lOOA
igO.I 1 1 1 I I
- .I LO 10 100 10 100
IeEO· OUTPUT CURRENT - mA If'-lM'UT CURRENT-mA
219
ELECTRONICS
PHOTON COUPLED CURRENT THRESHOLD SWITCH t'111A10
The General Electric Hll Al 0 is a glllliwn arsenide infrared emitting diode co~pled With a
silicon photo transistor in a dual in-line package. It is characterized and specified with
two resistors, one on the input and one on the output. This configutatiort provides a
circuit which will detect a doubling of the input c.urrent level by registering more than a
twenty to one difference in the output current over a wide temperature range.
FEATURES: SEAT1NG~
PLANE E
•
•
Programmable Threshold - "off' to "on" with a 2/1 change in input current
Glass Dielectric Isolation
~r~f-1
•
•
Fast Switching Speeds
Operation over wide temperature range
• High Noise Immunity
. • Covered under D.L. Component Recognition Program, reference fIle E51868 ·OJ \

Power Dissipation TA = 25°C *100 milliwatts
Power Dissipation TC =25°C *100 milliwatts MILLIMETERS INCHES
NOTES
SVMBOL
Forward Current (Continuous) 50 milliamps MIN. MAX. MIN. I MAX.
Forward Current (Peak) A 8.38 J 8.89 .330.1. .350
B 7.62 REF. .300 REF. 1
(Pulse width 1 }l.sec, 300 pps) 3 ampere C - 8.64 - .340 2
Reverse Voltage 6 volts D .406 .508 .016 .020
E - 5.08 - .200 3
F 1.01 1.78 .040 .070
*Derate 1.33mW/oC above 25°C G 2.28 2.80 .090 .110
H - 2.16 - .085 4
J .203 .305 .008 .012
K 2.54 - .100 -
PHOTO-TRANSISTOR M - 15· - 15·
N .381 - .015 -
Power Dissipation TA = 25°C **300 milliwatts P - 9.53 - .375
R 2.92 3.43 .115 .135
Power Dissipation. Tc =25°C ***500 milliwatts S 6.10 6.86 .240 .270
(Tc indicates collector lead temperature 1/32" from case) NOTES:
VCEO 30 volts 1. INSTALLED POSITION LEAD CENTERS.
VCBO 70 volts
VEBO 7 volt~ SEATING PLANE.
Collector Current (Continuous) 100 milliamps 4. FOUR PLACES.
**Derate 4.0mW/oC above 25°C

***Derate 6.TmW/oC above 25°C
TOTAL DEVICE
Storage Temp~rature -55 to 150°Co
Operating Temperature -55 to 100 C
*---
~~
I \;
r-t_.5
6
---1
Lead Soldering Time (a(260°C) 10 seconds ~HIIAIO 4~_~_-o

......_ ...
L _ _ _ _ -l
Input to Output Isolation Voltage 1500V(peak)
Surge Isolation (Input to Output) THRESHOLD SWITCH BIAS
1500V(peak) 1060V(RMs) CIRCUIT 11.LUSTRATION
Steady-State Isolation Voltage (Input to Output)
950V(peak) 660V(RMS)
220
\H11A101
INFRARED
EMITTING
DIODE SYMBOL MIN. MAX. UNITS PHOTO-TRANSISTOR SYMBOL MIN. TYP. MAX. UNITS
Forward Voltage VF 1.5 volts Breakdown Voltage V(BR)CEO 30 - - volts
(IF=IOrnA) (IC=10mA, IF=O)
Reverse Current IR - 10 inicroamps Breakdown Voltage V(BR)CBO 70 - - volts
(VR=6V) (Ic=IOOJ,tA,IF=O)
Capacitance CJ 100 picofarads Breakdown Voltage V(BR)EBO 7 - - volts
(V=O, f=1 MHz) (IE=IOOJ,tA,IF=O)
lin )
lout
~
1
Vin
i
RI 150.0. R2 2.7M.n. Vou·t
~
FIGURE 1
THRESHOLD CIRCUIT CHARACTERISTICS - BIAS PER FIGURE 1

(-SSOC to 1000C Unless Otherwise Specified)
SYMBOL PARAMETER/CONDITIONS MIN. TYP. MAX. UNITS
lout Output Current (Vout=IOV, lin :$ SmA, T A=2S 0 C) 1 50 nanoamperes

lout Output Current (Vout=IOV, lin :$ SmA, TA=IOOOC) 1 50 microamperes
10uYr D.C. Current Transfer Ratio
lin (Vout=IOV, lin ~ lOrnA) 10 30 percent
Vout Output Saturation Voltage (Iin=IOmA, 10ut=0.SmA) 0.2 0.4 volts
Rio Input to Output Resistance (Vio =SOOV) Note 1 100 gigaohms
ton Turn-On Time (Vcc = lOY, Iin=20 rnA, RL =IOOn) 5 microseconds
FiglJre 2
toff Turn-Off Time (Vcc = IOV,Iin =20mA, RL =IOOn) 5 microseconds
Figure 2
Note 1: Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode)
shorted together and the output terminals /transistorl shorted together
r-----t INPUT
<>-' L...()PULSE
47.n.
2.7M.t\ ~ -F~-=1C~~{PUT
CC ..dl----!.\d9°'o
ton~i lt-- I I
L..-_~----~ --t j"-toff
FIGURE 2
221
B.IASED PER FIGURE 1
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Y'N-INPUT YOLTAGE-VOLTS
1. INPUT 2. LEAKAGE
PROGRAMMING AND TRANSFER CHARACTERISTICS
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3. TEMPERATURE 4. INPUT CURRENT
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,5. THRESHOLDING 6. PROGRAMMING
222
THRESHOLD COUPLER APPLICATIONS
LINE CURRENT MONITORS

LINE DROPOUT ALARM LIGHT
I LINE
0-_~~====~t- ____~~ __-----0 When remote line current (I LINE ) falls below
the programmed threshold value the LE'D
turns on, indicating loss of power to critical,
isolated circuit function. Phase inversion, ac-
complished by replacing the 2NS306 with a
D41Kl PNP and interchanging the collector and
+SV emitter connections, provides an over-current
alarm light.
INFORMATION FLOW DIRECTOR

To minimize lines needed to communicate between A and B, a queue system is set up using HII Al O's to monitor
line use and set up the queue procedures.
ILINEA
I
J HIIAIO
PROCESSOR
INHIBIT A,
USE B I I ILINEB PROCESSOR
A HIIAIO B
INHIBIT B.
USE C I I I LiNEC
I HIIAIO I
INHIBIT C,
I USE A I
HIIAIO ISOK THERMISTOR ISOK HEATER
3V 6V
AC POWER
LINE
CONDUCTIVITY AC POWER
PROBE LINE
ELECTROLYTE SOLENOID
In many process control applications such as solution mixing, resistor trimming, light control and
temperature control, it is advantageous to monitor conductivity with isolated low voltages and
transmit this information to a power control or logic system. Low voltages are often preferred for
safety, convenience or self heating considerations or to prevent ground loops and provide noise
immunity. Until the advent of the HIIAlO such systems were complex and costly. Using the HIIAlO
allows the use of simple low power circuits such as illustrated here to provide these functions. In
battery operated systems, the low current thresholds of the HllAlO can considerably enhance
battery life. '
223
SOLID ST~I E.
@ 0 © ELECTRONICS
Photon Coupled Isolator HllA520-HllA550 -Hl1A5100
The General Electric HllA520, HllA550 and HllA5IOO con-

sist of a gallium arsenide, infrared emitting diode coupled with
I~A-I
a silicon photo-transistor in a dual in-line package.
FEATURES: C (TOP VIEW) S

T 3 1.' MILLIMETERS INCHES
• High isolation voltage, 5000V m i n i m u m . 1 . ! 4 . 6 ~
SYMBOL NOTES
MIN. MAX. MIN. MAX.
• General Electric unique patented glass A 8.38 _I 8.89 I .330 .1 ..
350
~Hf- -l Fr-
B 7.62 REF. .300 REF. 1
isolation construction. C - 8.64 - .340 2
• High efficiency liquid epitaxial IRED. 1 R T I tI I' 0 .406 .508 .016 .020
• High humidiy resistant silicone encapsulation., 1f !

E
F
G
-
1.01
2.28
5.08
1.78
2.80
-
.040
.090
.200
.070
.110
3
• Fast switching speeds. G I' H - 2.16 - ,.085 4

'Al Covered under U .L. component recognition program, reference ftle E51868 -11-0 J .203 .305 .008 .012
-
K 2.54 - .100
absolute maximum ratings: (25°C) (unless otherwise specified) M
N
-
.381
15·
-
-
.015
15·
-
P - 9.53 - .375
R 2.92 3.43 .115 .135
S 6.10 6.86 .240 .270
Power Dissipation - TA = 25°C *100 milliwatts
NOTES:
Forward Current (Continuous) 60 milliamps 1. INSTALLED POSITION LEAD CENTERS.
Forward Current (Peak) 3 amperes 2. OVERALL INSTALLED DIMENSION.
(Pulse width lllsec, 300 pps) 3. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE .
. Reverse Voltage 6 volts
4. FOUR PLACES.
*Derate 1.33mW/oC above 25°C.
TOTAL DEVICE
Storage Temperature -55 to 150°C.
PHOTO-TRANSISTOR
Operating Temperature -55 to 100°C.
Power Dissipation - T A = 25°C **300 milliwatts Lead Soldering Time (at 260°C) 10 seconds.
VCEO 30 volts Surge ISQlation Voltage (Input to Output). See Note 2.
VeBO 70 volts 5656V(peak) 40ooV(RMS)
VEBO 7 volts Steady-State Isolation Voltage (Input to Output).
Collector Current (Continuous) 100 milliamps See Note 2.
**Derate 4.0mW/oC above 25°C. 5000V(DC) 3000V(RMS)

INFRARED EMITTING DIODE MIN. MAX. UNITS PHOTO-TRANSISTOR MIN. TYP. MAX. UNITS
Forward Voltage - V F .8 1.5 volts Breakdown Voltage - V(BR)CEO 30 - - volts
(IF = lOrnA) (Ic = lOrnA, IF = 0)
Forward Voltage - V F .9 1.7 volts Breakdown Voltage - V(BR)CBO 70 - - volts
(IF = lOrnA) (Ic = 1001lA, IF =0)
TA = _55°C Breakdown Voltage - V(BR)EBO 7 - - volts
Forward Voltage - V F .7 1.4 volts =
(IE loolJ.A, IF = 0)
(IF = lOrnA)
Collector Dark Current - leEO - 5 50 nano-
(VCE == lOY, IF =0) amps
TA = +100°C Collector Dark Current - leEO - - 500 micro-
Reverse Current - IR - 10 microamps (VCE = 10V, IF = 0) amps
(VR = 6V) TA = 100°C
Capacitance - CJ - 100 picofarads Capacitance - CCE - 2 - pico-
(V=O,f= 1 MHz) (VCE = lOY, f = IMHz) farads
224
IH11A520-H11A560.H11A51001
coupled electrical characteristics (25°C) (unless otherwise specified)

DC Current Transfer Ratio (IF = 10mA, VCE = 10V) Hl1A5100 100 - - %
HllA550 50 - - %
Hll}.520 20 - - %
Saturation Voltage - Collector to Emitter (IF = 20mA, Ic = 2mA) - - 0.4 volts
Isolation Resistance (Input to Output Voltage = 500VDc . See Note 1) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage =0,£= 1 MHz. See Note 1) - - 2.0 picofarads
Tum-On Time - ton (Vce = IOV, Ie = 2mA, RL = lOOn). (See Figure 1) - 5 10 microseconds
Tum-Off Time - toff (Vee = 10V, Ie = 2mA, RL = lOOn). (See Figure 1) - 5 10 microseconds
NOTE 1:
Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together
and the output terminals (transistor) shorted together.
NOTE 2:
Surga Isolation Voltage
Q. Definition:
This rating is used to protect against transient over-voltages generated from switching and lightning-induced surges. Devices shall be
capable of withstanding this stress, a minimum of 100 times during its useful life. Ratings shall apply over entire device operating
temperature range.
b. Specification For71lllt:
Specification, in terms of peak and/or RMS, 60Hz voltage, ofspecified duration (e.g., 5656VpeaId4000VRMS for one minute).
c. Tellt Conditionll:
Application of full rated 60Hz sinusoidal voltage for one minute, with initial application restricted to zero voltage (Le., zero phase),
from a supply capable of sourcing 5mA at rated voltage.
Staady-stata Isolation Voltage
a. Definition:
This rating is used to protect against a steady-state voltage which will appear across the device isolation from an electrical source
during its useful life. Ratings shall apply over the entire device operating temperature range fora period of 10 minutes minimum.
b. Specification For71lllt:
Specified in terms of D.C. and/or RMS 60 Hz sinusoidal waveform.
Co Tellt Conditionll:
Application of the full rated 60 Hz sinusoidal voltage, with initial application restricted to zero voltage (i.e., zero phase), from a
supply capable of sourcing SmA at rated voltage, for the duration of the test..
r-----1 INPUT
-1 L-PULSE
,......-~.... OUTPUT
. FIGURE. 1: Adjust Amplituda of Input Pulse for Output (Ie) of 2mA
225
IH11A520~Ht1A560~H 11A5100 I . TYPICAL CHARACTERISTICS
1000
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VF -FORWARD VOL1l\GE - VOLTS ., ~ FORWARP CURRENT· mA
1. INPUT CHARACTERISTICS 2. FORWARD VOLTAGE TEMPERATURE

COEFFICIENT
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3. DARK lceo CURRENT VS. TEMPERATURE 4. leBO VS. TEMPERATURE
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5. OUTPUT CHARACTERISTICS 6. OUTPUT CHARACTERISTICS
226
IH11A520-H11A550-H11A510ol
10 1000
I
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7. OUTPUT CURRENT VS. INPUT CURRENT 8. OUTPUT CURRENT - COLLECTOR-TO-BASE

VS. INPUT CURRENT
• 1,'_-I-
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RESISTANCE
II
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I6810 20 40 8080100 10 20 10 100 100 100 1000
ICEO'OUTP\If CURRENT-mA ",-EX1IE_ BAlI! REllSTOII-Ka
11. SWITCHING TIMES VS. OUTPUT CURRENT 12. SWITCHING TIME VS. RBE
227
i')ULILI ~ IAI C
@b '©ELECTRONICS
Photon Coupled Isolator H74A1
TTL Interface
The General Electric H74Al provides logic to logic optical interfacing of TTL gates
with guaranteed level compatibility in practical specified. circuits. The H74Al is a
transistor O\1tput photo-coupled isolator specifically designed to eliminate ground
loop cross talk and reflection problems when two distinct logic systems are coupled .
. It is guaranteed to couple 7400, 74HOO and 74SOO logic gates over the full TTL
temperature and voltage ranges.

Power Dissipation TA =25°C *100 milliwlitts
Power Dissipation Tc =25°C *100 milliwatts
(Tc indicates collector lead temperature 1/32" from case)
Forward Current (Continuous) 60 milliamps
(Pulse width lpsec 300pps)
Reverse Voltage· 6 volts
"'Derate 2.2mW/oC above 25°C. MILLIMETERS INCHES

SVMBOL NOTES
MIN. MAX. MIN. MAX.
A 8.381 8.891 .330.1 . .350
B 7.62 REF. .300 REF. 1
C - 8.64 - .340 2
0 .406 .50B .016 .020
PHOTO-TRANSISTOR E - 5.08 - .200 3
F 1.01 1.78 .040 .070
Power Dissipation TA = 25°C **300 milliwatts G 2.28 2.80 .090 .110
H - - .085
Tc =25°C ***500
2.16 4
Power Dissipation milliwatts J .203 .305 .008 .012
(Tc indicates collector lead temperature 1/32" from case) K 2.54 - .100 -
M - 15 0 - 15°
VCEO 15 volts N .381 - .015 -
P - 9.53 - .375
VCBO 15 volts A 2.92- 3.43 .115 .135
S 6.10 6.86 .240 ,270
VECO 5.5 volts
NOTES:
. Collector Current (Continuous) 50 milliamps 1. INSTALLED POSITION LEAD CENTERS.
"''''Derate 6.7mW/oC above 25°C.
"'''''''Derate 1l.lmWfOC above 25°C. 3. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE.
4. FOUR PLACES.
TOTAL DEVICE
Operating Temperature 0 to 70°C
Surge Isolation Voltage (Input to Output)
@ VDE Approved to 0883/6.80 0110b Certificate # 35025

'" Covered under U.L. component recognition program. reference flle E51868
228
IH74A1 I
Electrical Chm::acteristics of H74Al *
.All specifications refer to the following bias configuration (Figure 1) over the full operating temperature (O°C to 70°C) and
logic supply voltage rll-nge (4.5 to 5.5VDc) unless otherwise noted.
Vcelo------.----.,
r-----4\~---OVcet
RECEIVIN.
GATE
SEETAeLEZ
TRANSIlITTIN.
eATE
SEE TABLE r
Ne
Figure 1. H74A1 BIAS CIRCUIT
Yin (0), Receiving Gate For VOUT(O) fro~ Transmitting Gate - ....... . . . . . . . . . . . . . . . .. 0.8 V Max.
Yin (1), Receiving Gate for VOUT(l) from Transmitting Gate - . . . . . . . . . . . . . . . .-. . . . . . . .. 2.4 V Min.
tp (0), Transmitting Gate to Receiving Gate Propagation Time - . . . . . . . . .. . . . . . . . . . . . .. 20 p.sec. Typ.
tp (1), Transmitting Gate to Receiving Gate Propagation Time - . . . . . . . . . . . . . . . . . . . . . .. 4 p.sec. Typ.
Isolation Resistance (Input to Output = 500VDc)................................... 100 gigaohms Min.
Input to Output Capacitance (Input to Output Voltage = 0, f = 1 MHz) . . . . . . . . . . . . . . . . . .. 2.5 pF Max.
TABLE I.
CHARACTERISTICS REQUIRED OF TTL GATES WHICH ARE
TO BE INTERFACED BY H74A1
TEST CONDITIONS, FIGURE 2 LIMITS

. PARAMETER Vee liN ISINK
Min. Max. . Min. Max • Min. Max.
Min. Max. Units
t
YIn
lIn -
Vout
VOUT (1) 4.SV -O.4mA 2.4 Volts
VOUT (0) 4.SV 12.0mA 0.4 Volts
VIN (1) S.SV 1.0mA 2.0 Volts
VIN (0) S.SV -1.6mA 0.8 Volts Figure 2.
229
SOLIDSIArE
@O co ELECTRONICS
AC Input Photon Coupled Isolator H11AA1-H11AA4
~
Ga As Infrared Emitting DIodes & NPN Silicon Photo-Transistor
The General Electric HllAAI - HllAA4 consist of two gallium arsenide infraredetnit.
ting' diodes connected in inverse parallel and coupled with a silicon photo-transistor in
a dual in-line package.
FEATURES:
Ijl{(t----~ 6
• AC or polarity insensitive inputs 2
,
I
,5
I
,
3<>--t- I
'- _______ .J
4
• Built-in reverse polarity input protection
• I/O compatible with integrated circuits
'A\ Covered under lJ. L. component recognition program, reference file E51868

Power Dissipation TA =25()C *100 milliwatts
Power Dissipation Te = 25°C *100 milliwatts
(Te indicates collector lead temperature 1/32" fro~ case)
Input Current (RMS) 60 milliamps
Input Current (Peak) ± 1 ampere
(pulse width Illsec, 300 pps)
*Derate 1.33mW/oC above 25°C

MILLIMETERS INCHES
S"MBOL NOTES
MIN. MAX. MIN. MAX.
A 8.38 I8.89 .330 J .350
B 7.62 REF. .300 REF. 1
PHOTO-TRANSISTOR C - 8.64 - .340 2
D .406 .508 .016 .020
Power Dissipation TA = 25°C **300 rnilliwatts E - 5.08 - .200 3
F '1.01 1.78 .040 .070
Power Dissipation Te = 25°C ***500 milliwatts G 2.28 2.80 .080 .110
(Te indicates collector lead temperature 1/32" from case) H - 2.16 - .065 4
J .203 .305 .008 .012
VCEO 30 volts K 2.54 - .100 -
VeBO 70 volts M - 15· - 15·
VEBO 5 volts
N .381 - .015 -
P - 9.53 - .375
Collector Current (Continuous) 100 milliamps R 2.92 3.43 .115 .135
S 6.10 6.86 .240 .270
NOTES:
**Derate 4.0mW/oe above 25°C 1. INSTALLED POSITION LEAD CENTERS.
***Derate 6.7mW/oe above 25°C
2. OVERALL INSTALLED DIMENSION,
SEATING PLANE.
4. FOU R PLACES.
TOTAL DEVICE
Surge Isolation Voltage (Input to Output)
2500V(peak) I770V(RMS)
1500V(peak) I060V (RMS)
230
H11AA1-H11AA4
individual electrical\characteristics (25°C) (unless otherwise specified)
INFRARED EMITTING SYMBOL MAX UNITS PHOTO-TRANSISTOR SYMBOL MIN. MAX. UNITS
DIODE
Input Voltage VF -Breakdown Voltage V(BR)CEO 30 volts
(IF =.:t.: 10mA) (Ic = lOrnA, IF = 0)
HllAAI,3,4 1.5 volts
HIIAA2 1.8 !Volts Breakdown Voltage V(BR)CBO 70 volts
(Ie = 1001LA, IF = 0)
Capacitance CJ 100 picOfarads Breakdown Voltage V(BR)EBO 5 volts
(V = 0, F = I MHz) (IE = 1001LA, IF = 0)
Collector Dark Current ICEO
(VCE = lOY, IF = 0)
HllAAI,3,4 100 nanoamps
HllAA2 200 nanoamps

MIN. MAX. UNITS
HllAA4 100 percent
Current Transfer Ratio (VCE = IOV, IF = ± lOrnA) percent
HllAA3 50
20 percent
HllAAI
HllAA2 10 percent
Saturation Voltage - Collector to Emitter (ICEO =O.5mA, I F= ±IOmA) 0.4 volts
Current Transfer Ratio Symmetry: ICEO(VCE=IOV, IF=IOrnA) 2
Note
ICEO(VCE=IOV,IF=-IOrnA)
HllAAl,3,4 0.33 3.0
Isolation Resistance (Input to Output Voltage = 500Voc . See Note I) 100 gigaohms
-Note 1: Tests of input-to output isolation current resistance, and capacitance are performed with the input terminals (diode)
shorted together and the output terminals (transistor) shorted together
Ie MAXIMUM 10
PEAK
OUTPUT ( \ ( \ IF=-IIOmAI
I \ II \
I
/" f--"
.-
/;
MIN~~~~ I 1\ ,- I 1\ f( IF"IIOmAI
"\ /" .........

IC
f
OUTPUT
I \ /
I \ \
IJ \/ I\, ) \/ I\,
I(CEO)OUTPUT WAVE FORM (SEE NOTE 2)
AT VCE =5V
/ ........ V .........
10-3
~
~ru ~ ~
VeE -COLLECTOR TO EMITTER VOLTAGE - VOLTS
/ \ / \
1\ / \ I Note 2: The H11 AA 1 specificatio.n guarantees the maximum
peak output current will be no more than three
r\. ./ I\.. /V times the minimum peak output current at
IF= 10mA
IF INPUT WAVE FORM
231
I H11AA1-H11AA4 1 TYPICAL CHARACTERISnCS
80
I 1.0
....--
40 Is
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V -INPUT VOL1lIG£-VOlTS I, -INPUT CUflRENT-mA
1. INPUT CHARACTERISTICS 2. OUTPUT CURRENT VS INPUT CURRENT
----
,0' 4
,.",
CI"aov
1.. ·20....
r'l ,"tOV •
,0' 'lV ·,OmI
1.0
..8
1'// ;.
--
!iu
1'/V .1•• ·
.4
r--
I•
,.
VI
V
IjV
11'/
NOIUMUZlD TO:
VCl"IOV
TA ...tI"e
I, 00 = f=
~.
I.aDe,
~ .00
.04
--- f-
p::,...
r,..
HOItMALlZED TO:
K
--
.... 10\1
IF ·1OmA
TAT C
, . . . .01 ..., ... ••

3. DARK I CEO CURRENT VS TEMPERATURE 4. OUTPUT CURRENT VS TEMPERATURE
• I,-5OMA _
r-
111'"20,,,.. - r-
0
V !..I,L
• • GmA_
r-
I /' II
II I
.I
~ ... =F
~~~
I / I,.·.... r-
1.... 00
.01 I I 1,- IInA
.001
. . 00
em-.
R.I~IASE RES!STQft"ICA
""'"
5. OUTPUT CHARACTERISTICS 6. OUTPUT'CURRENT VS BASE

EMITTER RESISTANCE
232
H11AA APPLICATIONS I H11AA1-HnAA4)
LOAD MONITOR AND ALARM
POWER SWITCH
I
1 ~ MONITOR
SWITCH
0 - -.......- -
In many computer controlled systems where
120VAC AC power is controlled, load dropout due to
filament burnout, fusing, etc. or the opposite
situation - load power when uncalled for due to
switch failure can cause serious systems or
safety problems. This circuit provides a simple
220.n. AC power monitor which lights an alarm lamp
and provides a "1" input to the computer
control in either of these situations while
+5V maintairiing complete electrical isolation be-
tween the logic and the power system.
D29E2 Note that for other than resistive loads, phase·

ALARM 3,h0 LED angle correction of the monitoring voltage
~________IN_P_U_T_~_O_~_O_G_IC__~~~ ALARM divider is required.
LIGHT
RING DETECTOR
0.2,u.f'
o----i
IK r-------, r--~I----o In many telecommunications applications it is
desirable to detect the presence of a ring
I
86 Vac - I
I
I
signal in a system without any direct electrical
contact with the system. When the 86 Vac
ring signal is applied, the output transistor of
the HIIAA is turned on indicating the presence
of a ring signal in the isolated telecommuni-
I cations system.
L _______ -1
HIIAA
UPS SOLID STATE TURN-ON SWITCH
BATTERY
Interruption of the 120 VAC power line
turns off the Hil AA, allowing C to charge
and turn on the 2N5308-D45H8 combination
TO INVE.RTER
which activates the auxiliary power supply.
OR ENGINE This system features low standby drain, isola-
STARTER tion to prevent ground loop problems and the
120VAC capability of ignoring a fixed number of "drop.,
ped cycles" by choice. of the value of C.
233
sOLID STATE
@ 0 ©ELECTRONICS
Photon Coupled Isolator H11AG1,H11AG2, H11AG.3
Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor
The General Electric HllAG series consists of a gallium. aluminum

arsenide, infrared emitting diode coupled with a silicon phototransistor in
a dual in-line package. This photon coupled isolator provides the unique
feature of high current transfer ratio at both low output voltage and low
input current. This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics isolation applica-
tions.
FEATURES:.
• High isolation voltage, 3750 V(RMS) minimum (steady state)
• General Electric unique glass construction MILLIMETERS INCHES
SVIIIlOI. NOTES
• High efficiency low degradation liquid epitaxial IRED MIN. MAX. MIN. I MAX.
A 8.38 -r8.89 .330-' .350
• Logic level compatible, input and output, with CMOS and LS/TTL B
C
7.62 RI<F.
8.64 -
.300 REF.
.340
1
2
• High DC current transfer ratio at low input currents D
E - I
.406 .508
5.08
.016
-
.020
.200 3
F 1.01 1.78 .040 .070
• 1M Covered under V.L. component recognition program, reference file G 2.28 2.80 .090 .110
E51868
H -
.203
2.16 -
.008
.085
.012
4'
J .305
K 2.54 - .100 -
® VDE Approved to 0883j6.800110b Certificate#. 35025 M
N
-
.381
15'
-
-
.015
15'
-
P - 9.53 - .375
absolute maximum ratings: (25 0 C) (unless otherwise specified) R
S
2.92
6.10
3.43
6.86'
.115
.240
.135
.270
NOTES:
INFRARED EMITTING DIODE 1. INSTALLEO POSITION LEAD CENTERS.
Power Dissipation TA = 25°C milliwatts 3. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE.
Forward Current (Continuous) milliamps 4. FOUR PLACES.

TOTAL DEVICE
"Derate 1.0 mWj"C above 25°C.
Storage Temperature -50°C to 150°C
Operating Temperature -50°C to 100°C
PHOTO-TRANSISTOR
Power Dissipation TA = 25°C "150 milliwatts Surge Isolation Voltage (Input to Output)
VCEO 30 volts HllAG1-HllAG2 5656V(peak) 4000V(RMS)
VCBO 70 volts HllAG3 3535V(peak) 2500V(RMS)
VECO 7 volts Steady-State Isolation Voltage (Input to Output)
Collector Current (Continuous) 50 milliamps HllAG1-HllAG2 5304V(peak) 3750V(RMS)
HllAG3 2100V(peak) 1500V(RMS)
""Derate 2.0 mW j"C above 25°C.
234
I H11AG1, H11AG2, H11AG31
individual electrical characteristics: (0-70 0 C)

INFRARED EMITTING DIODE MIN. -MAX. UNITS PHOTO-TRANSISTOR MIN. TYP. MAX. UNITS
Forward Voltage VF 1.5 volts Breakdown Voltage V(BR)CEO 30 - - volts

(IF = 1 mA) (Ic = 1.0 mA, IF =0)
Breakdown Voltage V(BR)CBO 70 - - volts
(Ic = 100 J.l.A, IF =0)
Reverse Current IR - 10 microamps
Breakdown Voltage V(BR)ECO 7 - - volts
(VR = 6V)
(IE = 100 J.l.A, IF =0)
Collector Dark Current ICEO - 5 10 micro-
Capacitance q - 100 picofarads (VCE = lOV, IF = 0) -amps
(V = 0, f = 1 MHz) Capacitance CcE - 2 - pico-
(VCE = 10V, f = 1MHz) farads
coupled electrical characteristics (0-70°C)

H11AG1 H11AG2 H11AG3
MIN. MAX. MIN. MAX. MIN. MAX. UNITS
DC Current Transfer Ratio

(IF = ,1.0 mA, VCE = 5V) 300 - 200 - 100 - %
(IF = 1.0 mA, VCE = 0.6V) 100 - 50 - 20 - %
(IF = 0.2 mA, VCE = 1.5V) 100 - 50 - - - %
Saturation Voltage - Collector to Emitter
(IF = 1.0 mA, Ic = 0.5mA) - 0.4 - 0.4 - 0.4 volts

Isolation Resistance (Input to Output Voltage = 500VDc) 100 - - gigaohms

Input to Output Capacitance (Input to Output Voltage = 0, f = 1MHz) - - 2 picofarads
Turn-On Time - ton (VCC =5V, IF = 1 mA, RL = 100) - 5 - microseconds
Turn-Off Time - toff (VCC =5V, IF = 1 mA, RL = 100) - 5 - microseconds
235
I H11AG1, H11AG2, H11AG3 1
TYPICAL CHARACTER ISTICS
10 10
8 S I F =5mA
-
S S
I- 4 '1~=2mA
I-
zw
4
i-' Z
w
IX: 2 .... ~ -
1/ I"'"""
IX:
./ 1',., 1,,=lmA
~
a
2
V a 1
I-
~
1
0.8
./ .
I-
:;)
!;
.S
.S
.4
I F=0.5mA
!; O.S o .2 / / ~
IF=0.3mA
g 0.4
e
w
N .1 If/L
w NORMALIZED TO: :::; ,08 IF=0.2mA
N
:; 0.2
/ IF=lmA « .06
« :z;
:z;
~O. 1
z 0.08
/ VC!=sv IX:
!iil
.04
,02
I , /
IF=O.lmA
l:, 0.06
I
@ .01 1/// ",.
NORMALIZED TO:
.008
.y 0.04
7 -
<,)
.006 YCE=5V
.004 IF=lmA
0.02
II / TA=2S'C
.002
0.Q1 ,001
/
0.1 1.0 10 loa . .1 .2 .4 .6 .8 1.0 2.0 4.0 S.O 8.010
IF':"INPUT CURRENT -mA VCE-COLLECTOR TO EMITTER VOLTAGE-VOLTS
OUTPUT CURRENT VS. INPUT CURRENT OUTPUT CURRENT VS. COLLECTOR-EMITTER

VOLTAGE
10
8 10
S NORMAuZED TO:
6
.S ~IF=lmA
4
~ 4 I-- VCE=5V I"":
!z I f--- RSE=L'
::! i !zw 2 iL
IX:
:;) I:::::::::- "- IX: 0~=fOmA SfT1A· .~ 2mA
:: 1.0 ~ ·0 1
:;) .. 8 <,) .0 S.
"f= .6 VCE=5V,l f =lmA !;. ,0 6 lmA
VCE-1.5V,1 F=lmA
5 ,4 NORMALIZED TO: .. ,04
w
e VCE=5V
VCE-O.SV, I F.=·lmA § I
~ .<
IF=lmA' fil ·0 2 I 1/ I /' O.SmA
TA =25'C N
II 1/
~ .1
b;.;.... :::;
« J
--
IX: .1
o .as ~ .08
~ .OS ~ ..... o .06
~ 04
J:>
@ .04 1-0..-....
--..
VCE =5V,I F =0.2mA
VCE=1.5V',1 F=0.2mA· @.
0.2mA
.02
j
VCE=O,SV I F =0.2mA J:> .02
.01
':"50 -25 o 25 50 75 100
0.Q1
1
I 10 100
II II 1000
Til. -AMBIENT TEMPERATURE- 'C RBE-EXTERNAL BASE RESISTOR-Kn
OUTPUT CURRENT VS. TEMPERATURE OUTPUT CURRENT VS. BASE EMITTER

RESISTANCE
100 10
so S
60
en
40 ./ ../
w
:z;
S
"""0::: 1-0.. ...... to!! RL =1 Kn
i= i""..
/' ./ /' LL
4
«
E
I
20
TA =75'V 25'C/-25'C /
LL
c;>
Z ~RL=100n
I\.
1\ tan RL=1 Kn
I-
z
w
10
8
IX:
:;)
.fo-
2
--.... r:::::
~ ~ ~:::::!:!"
IX: S e toff RL = lOOn
IX: z
:;)
<,)
e
4
/ / / «
z
0
1.0 b.... ..... V
IX: O.S
« 2 Z
;;:
IX:
0
u.
1.0
O.S
/ / / IX:
:;)
l-
e
0.6
0.4
.... 1:::::"
I w
N
_LL O.S :::; NORMALIZED TO:
0.4
I
«
::;;; VCC'=5V
IX: 0.2 IF=lmA
0.2
) II I 0
Z RL = 1000
1/
0.1
J.v / / 0.1
I
1.0 1.1 1.2 1.3 1.4 1.5 1.6 0.1 0.2 0.4 0.6 0.8 1 2 4 6 8 10
VF-FORWARD VOLTAGE-VOLTS IF -INPUT CURR.ENT -mA
INPUT VOLTAGE VS. INPUT CURRENT SWITCHING TIMES V~. INPUT CURRENT
236
TYPICAL CHARACTERISTICS I H11AG1, H11AG2, H11AG3 1·
100 1000
80 800
60 ~
«.
I-
I
40
/'
./
« 400
20
z 'I" J
'"
a::
a::
:::>
10 V I-
Z
w
a:: 200 r----- ICB(ON) VI. IF /
V
u 8 a::
VCB=I.5V
"«a:: 6
4 /
:::>
u
I- TA=25'C
0
a::
0 V ...:::>
I-
100
80
I-
2 :::>
U
w
...J
. ...J
0
1.0
0.8
VCB=10V
/ 0
I
...
0
80
40
.9
u
I 0.6 V
0
1l 0.4
20
/
/
0.2
0.1
o
/
25 50 75 100
10
1
/ 2 4 6 8 10 20 40 60 80100
TA -AMBIENT TEMPERATURE-'C IF-INPUT CURRENT -mA
ICBO VS. TEMPERATURE OUTPUT CURRENT - COLLECTOR-BASE

. VS. INPUT CURRENT
:525A
~----9-~~-'----~~ LOAD
47
SC160B
+5V 15K 120V
60Hz.
SUPPLY
V130LA20A
0.1
CMOS INPUT, 3KW, ZERO VOLTAGE SWITCHING SOLID STATE RELAY
The HIIAGI superior performance at low input currents allows standard CMOS logic circuits to directly operate a 25A solid state
relay. Circuit operation is as follows: power switching is provided by the SC160B, 25A triac. Its gate is. controlled by the C203B via the
DT230H rectifier bridge. The C203B turn-on is inhibited by the 2N4256 when line voltage is above 12V and/or the HI lAG 1 is off. False
trigger and dv/dt protection are provided by the combination of a GE-MOV8 varistor and RC snubber network.
INPUT R, C,
R, 47K
H11AG1 '40V, 20Hz. 751< 0.1,.F
/
AC DZ809 \ 95V.60Hz. 2201<
--- --
33T/F
INPUT
VOLTAGE '-
4.7M
C, 4.71< 200V, 50160 Hz. 390K 15T/F
•
200V
I
TELEPHONE RING DETECTOR/A.C. LINE CMOS INPUT ISOLATOR
The HllAGl uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally,
response time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2.
The high impedance to line voltage also can simplify board layout spacing requirements. .
237
SOLID STATE
@ D co ELECTRONICS
Photon Coupled Isolator
H11AV1, H1,1AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A
Ga As Infrared Emitting Diode It NPN Silicon Photo-T.ransistor
The General Electric H11 AV series consists of a gallium arsenide, infrared
<f9
. 883
VDE APPROVED TO
VDE 0883/6.80
emitting diode coupled with a silicon phototransistor in a dual in-line VDE 0860/8.81
package. The construction provides guaranteed internal distance for VDE VDE 0806/8.81
creep and clearance requirements. for business machine applications per
VDE 0804/1.83
VDE standard 0730-2P.
FEATURES: VDE'0750Tl/5.82
• High isolation voltage, 3750V(RMS) minimum (steady state). VDE 0110/11.72
lEe 601T1
• General Electric unique glass construction.
IEC 380
• High efficiency low degradation liqUid epitaxial IRED.
IEC 65
• High. humidity resistant silicone encapsulation.
CERTIFICATE # 30440
• Internal conductive part separation 2mm minimum.
• Creepage distance 8.2mm minimum (before mounting).
• Low isolation capacitance-O.5pf(max.}. 1M UL RECOGNIZED FILE # E51868
H11AV1, H11AV2, H11AV3 H11AV1A, H11AV2A, H11AV3A
SEATIN~
PLANE
k~B\ ~HI- ....jFI--

lR~I'11
P -t I
~ ,
G I'
-11-0
MILLIMETERS INCHES MILLIMETERS INCHES

S'I'MBOl NOTES SYMBO NOTES
MIN. MAX. MIN. MAX. MIN. MAX, MIN. MAX.
A 8.38 _I. 8,89 ,330 J.350 A

C
8.38.! 8.89
10.16 REF,
,330 .1_ ,350
,400 REF,
B 7.62 REF, .300 REF. 1
,020
C - 8.64 - .340 2 0
E 06
.4 1 4.32
,508 ,016
- .170
0 ,406 ,508 .016 .020
E
F
-
1.01
5.08 -
.040
,200
.070
3 F
G
1.01
2.28
1,78
2,80
,040
.090
,070
,110
1.78
2,28 ,110 H - 2,16 - ,085
G 2.80 .090
H - 2.16 - .085 4 J .203 ,305 ,008 ,012 "
J .203 .305 .008 .012 K 2.54 - .100 -
K 2.54 - .100 - M - 10' - 10'
p.
M
N
P
-
.381
-
. IS'
-
9,53
,015
-
-
IS'
.375
- R
S
2.92
6.10
I
6,20 REF.
3,43
6,86
.244rEF,
.115
,240
.135
,270
R 2.92 3.43 .115 .135
NOTES:
S 6.10 6.86 .240 .270 1. DIMENSION APPLIES FOUR PLACES.
NOTES:
SEATING PLANE.
4. FOUR PLACES.
238
H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A

(unless otherwise specified)

Power Dissipation T A = 25° C ·100 milliwatts
Forward Current (Peak) J amperes
(Pulse width I p.sec, 300 pps)
Reverse Voltage 6 volts TOTAL DEVICE
*Dente 1.33mW/oC above 2S°C. Storage Temperature -55 to 150°C.
Lead Soldering Time (at 260°C) 10 seconds.
PHOTO-TRANSISTOR Surge Isolation Voltage (Input to Output).
Power DisSipation TA = 25°C ··300 milliwatts s6s6V(peak) 4000V(RMS)
VCEO 70 volts Steady-State Isolation Voltage (Input to Outout).
VCBO 70 volts 5304 V(DC) 3750V(RMs)
VEBo 7 volts
Collector Current (Continuous) 100 milliamps NominalVoltage SOOV( RMS)/600 V (oc).
**Derate 4.0mW/oC above 2SoC. Isolation Group C
individual electrical characteristics (25 °C) (unless otherwise specified)

INFRARED EMITTING DIODE MIN. MAX. UNITS PHOTO-TRANSISTOR MIN. TYP ~AX. UNITS
Forward Voltage VF .8 1.5 volts Breakdown Voltage ~BR)CEO 70 - - volts
(IF- lOmA) (Ic "'1.0mA, IF .. 0)
Forward Voltage V F
(IF-IOmA)
.9 1.7 volts Breakdown Voltage '(BR)'CBO 70
(Ie = 100pA, \r ... 0) ,
- - volts
T A- -55°C
Forward Voltage VF .7 1.4 vott&
Breakdown Voltage V(BR)EBO 7
(IE" 100pA, \r .. 0)
- - volts
(IF-lOmA)
T A '" +lOOoC
Collector Dark Current I CEO - 5 50 nano-
(VCE • 10V, IF" 0) amps
Reverse Current IR - 10 microampa
(VR " 6V) Capacitance CCE - 2 - pico
Capacitance - C J - 100 picofarads (VCE - lOV, f .. lMHz) farads
(V • O,f" IMHz)
coupled electrical characteristics (25 °C) (unless otherwise specified)

MIN. MAX. UNITS
DC Current Transfer Ratio (IF = lOrnA, VeE = 10V) HllAVl 100 300 %
HllAV2 50 - %
HllAV3 20 - %
Saturation Voltage - Collector to Emitter (IF = 20mA, Ic = 2mA) - 0.4 volts
Isolation Resistance (Input to Output Voltage = 500VDC " See Note 4)
Input to Output Capacitance (Input to Output Voltage =O,f= I MHz. See Note 4 )
100
-
-
0.5
gigaohms
picofarads
Turn-On Time - ton (Vec =10V, Ie =2mA, RL =lOOn). (See Figure I) - 15 microseconds
Turn-Off Time - toff (Vee = 10V, Ie = 2mA, RL = lOOn). (See Figure I) - 15 microseconds
Resistance to Creepage
• EXTERNAL KB 100
• INTERNAL KB 600
NOTE 4:
Tests of input to output isolation current resistance, and capacitance are performed with the input
terminals (diode) shorted together and the output terminals (transistor) shorted together.
239
H11AV1, H1.1AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A
I I
Vee
INPUT
470
/
IN~
WAVEFORM:
ADJUST AMPLITUDE ( I
OF INPUT PULSE FOR \
,. - I 90
OUTPUT (Ie) OF 2mA
- RL
OUTPUT
OUTPUT
1
I
I
I
%-
I
I
I
I
I
-- WAVEFORM
ton
-I--T- I
~ --i
10%
t off
FIGURE 1. SWITCHING TIME TEST CIRCUIT
III
;
i= , ~
.
10
r-- l- I-
(il, 10
::t
i=
U.
~uo '. '0111, • IOU
, ...
It:c· 1CIV
u.
~ ILl .1
~ 4
.- o ~
~ ~ t-....
.... 1\.. nUl Z
Z
-
II:
--------
II: :)
I
I
j:
"
I-
2
......... o ...... IIOIIIIAUZIO ' . fOIl r,. __ ...- ~~
o
Z ~ '" .... Z
~ ~~ ~
;... i""'"
~
~.
1.0
IIIOIIMAUZED TO:
'" ........ ....... ...........
........
Z
o
Z
V ~
....-.
~, ~ II:
V .".
Vcr· 10 VOLTS
.......... ..... .....r-.- :) L
j:
o
w
~
-- IeIo·2111A
,·1004 ...... "L·1OO0 -
..... ~ 1\..100
r-r 1-'
o
W
N ,(
/' V
/fOIl r, • __
IICIMfALllIO .." _I,·IOIIIA IIOMIAL.IZlO 10:
I, ·IOM
~2
..J
~
. ..J
~
::t
1ICIIIIML1210 ...,
::t
~ 01,
Z
2 ,. . , . '.0 2 ,. • • 10
ICIO-OUTM CUIIIIOIT-IIIA
20 40 .1010'00 Z
II:
o
10 10 100 .. ~ 100
FIGURE 2. SWITCHING TIMES VS. OUTPUT CURRENT FIGURE 3. SWITCHING TIME VS. Rae
•
0
•
I • ..,,,,,
"0,,"
-- r--
'00
50
'/
'/ ./
.I
, ../
_c
-- --
• <[ /' / ./
e
• I ••
I 20 / '/ /
~
25Y -55"1
--
Z
•
-
!AI TA=IOOY
a:
~ 10
r-.. u
... 2M
.I o
a:
I I
; 5
--
)
I I
.04 ~ I I ,/
~
NORMALIZED TO:
.... IOY
I, -lOlItA K t-... .!:- 2 I I
.0I
T"r.... 0 . 50
--r--
,., 100 I ..A I
/
/ /
.9 1.0 1.1 1.2 1.3 1.4 1.5
FIGURE 4. OUTPUT CURRENT VS. TEMPERATURE FIGURE 5. FORWARD VOLTAGE VS. FORWARD CURRENT
240
(H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3AI
MOUNTING THE H11AV

CURRENT INDUSTRIAL STANDARD VDE 0883/6.80 MOUNTEP) OF 8mm (0.315 IN.) BETWEEN INPUT AND
OF THE FEDERAL REPUBLIC OF GERMANY CON· OUTPUT TERMINALS. THE FOLLOWING DIAGRAM
CERNING OPTOCOUPLERS CALLS FOR A MINIMUM ILLUSTRATES ONE WAY TO FORM THE LEADS TO
CREEPAGE DISTANCE (I.E... ACROSS THE SURFACE MEET THIS DIMENSIONAL REQUIREMENT.
OF THE CIRCUIT BOARD IN WHICH THE DEVICE IS
TYPICAL H11AV COUPLER MOUNTING (DIMENSIONS IN MILLINCHES/MILLIMETERS UNLESS NOTED)
~----------400/10.2----------"'" DESIGN REQUIREMENTS
• INTERNAL SEPARATION BETWEEN

EMITTER/DETECTOR:
2mmMINIMUM
H11AV COUPLER ' . CREEPAGE DISTANCE BETWEEN

INPUT/OUTPUT LEADS:
SmmMINIMUM
. . .
PAINTED CIRCUIT BOARD
31.3/0.S ~
t o I t - - - - . . . . - - - - 322/S.2 --------~
* •
•
62.5/1.5 BOARD WITH 7S/2.0 DIAMETER CONTACTS ( 400/10.2 APART)
31.3/0.S PROTRUDING FROM BOARD FOR SOLDERING
IMPORTANT NOTICE:
CONFORMITY WITH VDE STANDARDS IS DETER· THE DIMENSIONS OF THE HIlAV OPTOCOUPLERS
MINED BY VDE ALTHOUGH THE ABOVE DRAWING MANUFACTURED BY IT CONFORM TO THOSE
ILLUSTRATES ONE SUGGESTED MOUNTING TECH- DIMENSIONS LISTED ON THE HllAV SPECIFIC·
NIQUE, IT SHOULD NOT BE UNDERSTOOD AS HAV· ATION SHEET #40.8, BUT ASSUMES NO RESPON·
ING RECEIVED ADVANCE APPROVAL FROM VDE SIBILITY OR LIABILITY FOR THE MEETING OF
THE 8mm (0.315") CREEPAGE DISTANCE REQUIRE·
IN RESPECT TO VDE STANDARDS, GENERAL MENT BY ANY CUSTOMER-MOUNTED PRODUCT.
ELECTRIC COMPANY (USA) GUARANTEES THAT
241
SOLID STATE
@ 0 CO ELECTRONICS
Photon Coupled Isolator Hl181,Hl182 , H1183 SYMEIOL
MILLIMETERS
MIN: MAX .
INCHES
NOTES
I
MIN.' MAX.
. Ga As Infrared ·Emitting Diode & NPN Silicon Photo-Darlington Ampliiter A .330 _I .. 350
r----' B
8.38 .'. 8.89
. 7.62 REF. .300 REF. 1
~:O~I
The General Electric HllBl, HllB2 and HllB3 are gallium -
: -
C 8.64 .340 2
0 .406 .508 .016 .020
arsenide, infrared emitting diodes coupled with a silicon photo- I· I E - 5.08 - .200 3
F 1.01 .040 .070
darlington amplifier in a dual in-line package. 30---+- 4 G 2.28
1.78
2.80 .090 .110
"j::..:-A---=:" H - .- .085
PLANE . I 2.16 4
absolute maximum ratings: (25°C) ~r~ ,1~ .1""- !
J .203 .305 .008 .012
-
" ll':op 1
K 2.54 - .100
r-I-N-F-R-A-R-E-D-E-M-I--T-T"'IN"""""::"G--D"'I:--:O:--:D~E"'----------'" 1 3,..-LJ--JU-1+1.
VIE:)
M
N
P
-
.. 381
-
1.50
-
9.53
-
.015
-
150
-
.375
.R 2.92 3.43 .115 .135
Power Dissipation *100 milliwatts i M .
S 6.10 6.86 .240 .270
Forward Current (Continuous) 60' mUliamps 1L_ NOTES:
Forward Current (Peak) 3 ampere 1. INSTALLED POSITION LEAD CENTERS.
(Pulse width 1 p.sec 300 PPs)
Reverse Voltage 3 volts SEATING PLANE.
4. FOUR PLACES.
*Derate 1.33mW/oC above 2SoC ambient.
TOTAL DEVICE
.PHOTO-DARLINGTON Storage Temperature -55 to 150°C
VCEO 25 volts Lead Soldering Time (at 260°C) 10 seconds
VEBO ' 7 volts 2500V(peak) l770V (RMS)
**Deratfa 2.0mW/oC above 2SoCambient. l500V(peak) 1060V(RMs)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-DAR L1NGTON MIN. TYP. MAX. UNITS
Forward Voltage Breakdown Voltage - V(BR)CEO 25 - - volts

HllBl, B2 (IF = lOrnA) 1.1 1.5 volts (Ic = lOrnA, IF = 0)
HllB3 (IF = SOmA) 1.1 1.5 volts Breakdown Voltage - V(BR)CBO 30 - - volts
(Ic = lootLA, IF = 0)
Reverse Current
(VR = 3V) - 10 microamps Breakdown Voltage - V (BR)EBO 7 - - volts
(IE = 100tLA, IF = 0)
Collector Dark Current - IcEO - 5 100 nanoamps
(VCE = lOY, IF = 0)
Capacitance Capacitance - 6 - picofarads
(y = O,f = lMHz) 50 - picofarads (VCE = 10V,f= lMHz)

DC Current Transfer Ratio (IF = lmA, VCE = 5V) HllBl 500 - - %

HllB2 200 - - %
HlIB3 100 - .' - %
Saturation Voltage - Collector to Emitter (IF = ImA, Ic = lmA) - 0.7 1.0 volts
Isolation Resistance (Input to Output Voltage = 500Vn d 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f= lMHz) - - 2 picofarads
Switching Speeds: (VCE = lOY, Ic = lOrnA, RL =lOOn) On-Time - 125 - microseconds
Off-Time - 100 - microseconds
'iU Covered under U.L. component recognition program, reference file E5l868
@ VDE Approved to 0883/6.80 OllOh Certificate # 35025 242
TYPICAL CHARACTERISTICS IH11B,1, H11B2, H11B31
100 10
x.. =4.0 mA
-- --
10
~
IF • 1.0mA
-
1.0
I .
!5
---
Go
!5o v- 100-- I
I ./ ,..-
o IF " .511'1A
III
~
..J
~ .0IV
./
NORMALIZED TO:
VeE = 5V I
--
~
I
IF" mA NORMALIZED TO:
VCE • 5V
e .00 I iF' tmA
...u TA' +25"C
.000 I
.1
.0I I
I~ ~ 100 -55 -15 25 65 100
IF-INPUT CURRENT-mA TA - AMBIENT TEMPERATURE -"C
1,000
,.- 10
--
.-
100
/
~ ......
...
Z ...- I-""'" t =4.0(A -
.
<I
E
...
// III
It:
It:
:::l
U
I-"
~..J--t:l.ot
Z 10 ... 1.0 t--
IV
III :::l
It: Go .."
It:
:::l
U
!5o ~~ IF"·5mA_ r-
1.0 o
Ii! III ,I
N
i~ O. I
:::i
<l
:Ii I II
/
It:
I
... ~
I NORMALIZED TO:
I
.0 I o
VeE = 5V
~
...
I
.5
/
vF -
1.0 1.5
FORWARD VOLTAGE - VOLTS'
2.0
.0 I
.1
l
1.0 10
J;F = 1.0mA
V CE - COLLECTOR TO EMITTER VOLTAGE - VOLTS

100
100
"\ LOAD RESISTANCE
1011 I ./
NORMALIZED TO - ... 10 5
./
.
<I
E
1\ I VCE'IOV
RL=IOOll -
Z
III
It:
L
10011 ICEO=IOmA ~ 10 4
!Z 1\ U
~ 10
./
It:
:::l
U
\
\
'"
o~ 10
3 ./
~
o
1\' III
./
./
a :l102
\\ 1\100011 <l
..~ 1.0
'\
.\
:Ii
It:
~ 10 I
I
./ NORMALIZED TO:
VeE = 10V
o ./ IF' 0
'\~ ...!"''" 1.0 V TA = +25°C
O.I I
0.01 0.1 I 10 100 .' 0 +~ +~ +~ +~ +100
NORMALIZED SWITCHING SPEED TA - AMBIENT TEMPERATURE - "C
'd+'.+'..H,
SWITCHING SPEED VS OUTPUT CURRENT NORMALIZED DARK CURRENT VS TEMPERATURE
243
SOLID STATE
@ 0 ©ELECTRONICS
Photon Coupled Isolator H118255 SYMBOL
MILLIMETERS
MIN. MAX.
INCHES
MIN. MAX.
NOTES
Ga As infrared: Emitting Di.ode & NPN Silicon Photo-Darlington Amplifier A 8.38 _I 8.89
7.62 REF.
.330.1. .350
.300 REF. 1
B
C - 8.64 -. .340 2
. The General Electric HllB255 consists of a gallium
arsenide infrareq emitting diode coupled with a silicon . I~A~
0
E
F
.406
-
1.01
.508
5.08
1.78
.016
-
.040
.020
.200
.070
3
photo.darlingtonamplifier in a dual in·line package.

I 3 1. -t- G
H
2.28
-
2.80
2.16
.090
-
.008
.110
.085
.012
4
absolute maximum ratings: (25°C) C (TOP VIEW) S J .203 .305
INFRARED EMITTING DIODES

lJ4 6~ K
M
N
2.54
-
.381
15'
-
-
.100
-
.015
-
15°
-
P - 9.53 - .375
R 2.92 3.43 .115 .135
Power Dissipation *90 milliwatts S 6.10 6.86 .240 .270
Forward Current (Continuous) 60 milliamps NOTES:
(Pulse width lJ,Lsec. 300 P Ps)
Reverse Voltage 3 volts SEATING ,PLANE.
*Derate 1.2mW/oC above 25°C ambient. 4. FOU R. PLACES.
TOTAL DEVICE
PHOTO·DAR LlNGTON Storage Temperature .55 to 150°C
Power Dissipation **210 milliwatts Operating Temperature ·55 to 100°C
VCEO 55 volts Lead Soldering Time (at 260°C) 10 seconds.
VEBO 8 volts l500V(peak) 1060V(RMs)
Collector Current (Continuous) 100 milliamps Steady·State Isolation Voltage (Input to Output).
**Derate 2.8mW/oC above 25°C ambient. 950V(peak) 660V(RMS)

INFRARED EMITTJNG TYP. MAX. UNITS PHOTO·DAR LlNGTON MIN. TYP. MAX. UNITS
.DIODE
(IF = 20mA) (Ic = lOOJ,LA, IF == 0)
(Ic = 100J,LA, IF = 0)
Reverse Current - 10 microamps Breakdown Voltage - V(BR)EBO 8 - - volts
(VR = 3V) (IE = 100J,LA, IF =0)
Collector Dark Current - ICEO - - 100 nanoamps
. (VCE = lOY, IF = 0)
(V = O,f = 1 MHz) (VCE = 10V,f = 1 MHz)
coupled electrical characte~istics (25°C)

DC Current Transfer Ratio (IF = lOrnA, VCE =5V) 100 - - %

Saturation Voltage - Collector to Emitter (IF = SOmA, Ic = SOmA) - - 1.0 volts
Isolation Resistance (Input to Output Voltage = 500Vo d 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f = 1 MHz) - - 2 picofarads
Switching Speeds: On·Time - (VeE = IOV, Ie = lOrnA, RL = lOOn) - 125 - microseconds
Off·Time -(VeE = IOV, Ie = lOrnA, RL = lOOn) - 100 - microseconds
1M: Covered under U.L. component recognition program, reference ftle E51868
® VDE Approved to 0883/6.80 0110b Certificate # 35025
244
IHl1B255I
10
100
...
10
i::::I
U
~ ~ I"40m~
... 1.0
-
1.0 ::::j=lomA
::::I
,..-
...
Ir
A.
::::I
o ....- 5mA-
fa
I "" o
LI.I
N
...-
---
N ./ ~
I,'lmA
~ NORMALIZED TO:
~ .0 I
./ VCE • 5V '"
:E I
~ NORMALIZED TO:
I§
Z
I
...e·
u
OO1 /
/
I ... ·IOmA
Z
H
I
~'
I,
VeE • 5V
-IOmA
TA • +25-<:
.000 I .0I
I
.I 1.0 10 100 -55 -IS 25 65 100
I , -INPUT CURRENT - mA T. - AMBIENT TEMPERATURE _oC
1. OUTPUT CURRENT VS. INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE
1,000 10
,,"
----
~Oi~
,," ...z
100
./
V"~~mt
'e"
...
I
// ~
II:
::::I
U
... 1.0
~....... R5m(
Z 10
/ ~::::I
LI.I I" 1m A
-
II:
II: ./
::::I o
U
1.0 o /
i
; '/ LI.I
N
~
;;;;0
~ o. I '"
......
.0 I
-7 :E
i I
eu
I
NORMALIZED TO:
VCE·5V
...
/
I .. ' 10mA
.0I
-L
I
.5 1.0 1.5 2.0 .1 1.0 10 100
V, - FORWARD VOLTAGE - VOLTS V CE - COLLECTOR TO EMITTER VOLTAGE - VOLTS
3. INPUT CHARACTERISTICS 4. OUTPUT CHARACTERISTICS
100 '\
LOAD RESISTANCE
"- Ion ./
I NORMALIZED TO - ... 101
./
1\ I VCE·IOV
RL-ioon -
Z
LI.I
II:
./
loan ICEO'IOmA ~ 104
f\ U
:II: ./
\.
\ :io 103 ./
o 7
\' LI.I
:l102
"7
\
.\ \10000
'"
::E
II:
./ NORMALIZED TO:
'\ ~ 10 I
VCE = 10V
\~ I
...o ./ IF' 0
'\~1 ...u 1.0 ./
TA = +25°C
O.I I
0.01 0.1 I 10 100 .0 + 25 +45 +65 +85 +100
NORMALIZED SWITCHING SPEED TA - AMBIENT TEMPERATURE - ·C
td+tr+t.+tf
5. SWITCHING-SPEED VS. OUTPUT CURRENT 6. NORMALIZED DARK CURRENT VS.
TEMPERATURE
245
sou0 SlATE
@ D ©ELECTRONICS
MILLIMETERS INCHES
S'IM!OL NOTES
Photon Coupled Isolator H11BX522 A
MIN.
8.38 j
MAX.
8.89
MIN.
.330 J.
MAX.
.350
Ga As Solid State lamp & NPN Silicon Photo-Darlington Amplifier 8
C -
7.62 REF.
8.84
.300 REF.
- .340
1
2
.406 .508 .016 .020
The General Electric Hl1 BXS22 is a gallium arsenide, infrated D
E - 5.08 - ,200 3
emitting diode coupled with a silicon photo-darlington amplifier S;t:~~G
in a dual in-line package. '~rK ~~ I~ A -I F
G
H
J
1.01
2.28
-
.203
1.78
2.80'
2.16
.305
.040
.090
-
.008
.070
.110
.085
.012
4

1
B
T3 1·-t
C (TOP VIEW) S
K
M
N
2.54
-
.381
-
15'
-
.100
-
.015
-
15'
-
M l!4 6~ P
R
-
2.92
9.53
3.43
-
,115
.375
.135
S 6.10 6.86 .240 .270
Power Dissipation *100 milliwatts \' ~HI--lFr- NOTES:
::P~:liTIt
Forward Current (Continuous) 60 milliamps 2, OVERALL INSTALLEO DIMENSION.
Forward Current (Peak) 3 amperes 3. THESE MEASUREMENTS ARE MADE FROM THE
(Pulse width 1 p.sec 300 P Ps) SEATING PLANE.
lteverse Voltage 3 Volts 3ot-___ 4 G ,..l ~I_D 4, FOUR PLACES,
·Derate 1.33mW/o above 25°C ambient.

TOTAL DEVICE
PHOTO-TRANSISTOR Storage Temperature -55 to 150°C
VCEO 25 volts Lead Soldering Time (at 260°C) 10 Seconds
'lEBO 7 vohs 2500'1(peak) 1700'1(RMS)
Collector Current (Continuous) 100 milliamps Steady-State Isolation Voltage (Input to Output)
"Derate 2.0mW/oC above 251>C ambient. 1500V(peak) 1060V(RMS)

INFRARED EMITTING DIODE TVP. MAX. UNITS PHOTO-DAR LINGTON MIN. TYP. MAX. UNITS
(IF = O.SoiA) (Ic =10mA, IF =0)
(Ie =l00IlA, IF = 0)
Reverse Current - 10 microamps Breakd()wn Voltage - V(BR)EBO 7 - - volts
(IE = l00IlA, IF, =0)
(VR =3V)
Collector Dark Current - IcEO
(VCE =12'1, Rm: =75M 0, micro-
TA =50°C) - - 10 amps
Capacitance
CapaCitance 50 - picofarads COllector-Emitter ~C8E pica-
(V= 0;£= 1 MHz) (VeE =10V,f= 1 MHz· . - .6 - farads

MIN. TVP. MAX. UNITS'
= =
DC Current Transfer Ratio (IF O.SmA, 'ICE 6'1, RBE =7.5Mn) -25°C" +50°C 200 - - %
Saturation Voltage - Collector-Emitter (IF =5mA, Ic =2mA, RBE =7.5 MO) - - 1.0 Volts
Isolation ltesistance (Input to Output Voltage = 5OOVod - 100 - gigaohms
Input to Output Capacitance (Input to Output Voltage =0;£ =1 MHz) - 2 - picofarads
Switching Speeds: (IF =5mA, See Figure 1) tpr 1 - 3 milliseconds
~ VDE Approved to 0883/6.80 OllOh Certificate # 35025
246
100 10
IF =4.0 mA
t-
~
L&J
It:
10
--
Z
L&J
It:
- •
--
It: It:
::> ::> , IF = LOmA
u u
1.0 ~ I
t- /.0
~
CL
t- V ~::> ..-
::>
o ./ o I
-
I ~
e
N
./
o
L&J
N
~ ._-
IF = .SmA
::i NORMALIZED TO: ~

'"lE
It:
.0IV VCE • sv lE
It:
I
NORMALIZED TO:
o IF = I mA o
Z Z
I I VCE = SV
~ .00 I
,...
U
...uo IF'\ mA
.... TA = +2S·C
.000 I
.1
.0I
-55 -15 25
I 65
La 10 100 100
IF -INPUT CURRENT -mA TA - AMBIENT TEMPERATURE _·C
1,000 10
",,-
1/
v""
/' t-
Z r- ~ Y=4.0,"'A 1-
~ f.---
100 , / L&J
I'
It:
'",
E It:
t-
Z 10
::>
u
t- La l--t:,oL f-
I
L&J ::>
It: CL
I-
1/
It:
::>
u
::>
o I---- IF=.SmA_
f-
1.0 o
o
It:
;
It:
V L&J
~
--'
rt
o
LL
0, I , '"lE I
/
It:
I
... o
Z
I NORMALIZED TO:
.0 I ...o VCE = SV
...u
I
.5
/
VF -
1.0 1.5
FORWARD VOLTAGE - VOLTS
2.0
.0 I
.1
J
1.0 10
IF = LamA
100
./
./
I- 10 5
VOUT Z
w
a::
7'
9.IK ~ 10 4
u
":3
+12 VOLTS
./
""
~
o
103 ./
o L
L&J
~ 10 2 ./
-'
5mA~ '"a::lE ./ NORMALIZED TO:
15m., lin ~ 10 I
OmA ~ I VCE = 10V
2",sc o L IF = a
IN914
--t ---t--
W
V
Vo~~
......°1.0 TA = +2S·C
6.8K IN9I4 -
I I
- I tpr I
I
a +.25 +45 +65 +85 +100
- TA - AMBIENT TEMPERATURE _·C
FIGURE 1. NORMALIZED DARK CURRENT VS TEMPERATURE
247
SOLID 'STATE
@ D co ELECTRONICS
Photon Coupled Isolator H11 C1, H11 C2, H11C3
MILLIMETERS INCHES
.Ga As Infrared Emitting Diode & Light Activated SeR S'IM!OI.
MIN. MAX. MIN. MAX.
NOTES
The General Electric Hll CI, HI1 C2 and Hll C3 are gallium A
8
8.38 _I.
7.62 REF.
8.89 .330.1. .350
.300 REF. ,
arsenide, infrared emitting diodes coupled with light activated sil- C 8.64 - .340 2
icon controlled rectifiers in a dual in-line package.

D
E
F
-I
.406
1.01
.508
5.06
1.78
.016
-
.040
.020
.200
.070
3
absolute maximum rati'ngs: (25°C) G 2.28 2.80 .090 .110
m
H -
.203
2.16 -
.008
.085
.012
4
J .305
INFRARED EMITTING DIODE HI--lFI- - -
~
K 2.54 .100
M - IS" - IS"
Power Dissipation ·100 milliwatts 'l N .381 - .015 -
P.-
R
~
I
I
,
P
R
-
2,92
9.53
3.43
-
.116
.375
.135
S 6.10 6.86 .240 .270
Forward Current (Peak) 3 ampere G I' NOTES:
(Pulse width 1 Ilsec 300 P Ps) -11- D 1. INSTALLED POSITION LEAD CENTERS.
Reverse Voltage 6 volts 3. THESE MEASUREMENTS ARE MADE FROM THE
*Derate1.33 mW/oC above·2SoC ambient. SEATING PLANE.
4. FOUR PLACES.
PHOTO-SCR TOTAL DEVICE

Peak Forward Volt~e 200 volts Storage Temperature ·55 to 150°C
RMS Forward Current 300 milliamps Operating Temperature -55 to 100°C
Forward Current (Peak) 10 amperes Lead Soldering Time (at 260°C) 10 seconds
(100llsec 1%duty cycle) Surge Isolation Voltage (Input to Output).
Surge Current (1 Orn sec) 5 amperes lJllCl 3535V(peak) 2500V(RMS)
Reverse Gate Voltage 6 volts Hll C2-Hll C3 2500V( peak) 1770V(RMS)
Power Dissipation (25°C Ambient) .... 400 milliwatts
Steady-State Isolation Voltage (Input to Output).
Power Dissipation (25°C Case) .... ·1000 milliwatts
**Derate S.3m\V/oC above 25°C ambient. Hl1Cl 2100V(peak) 1500V(RMS) .
***Derate 13.3mW/oC above 25°C case. Hll C2-Hll C3 1500V(peak) 1060V( RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-SCR MIN. TYP. MAX. UNITS
.Forward Voltage VF 1.2 1.5 volts Off-State Voltage - VDM (RoK 200 - - volts
(IF = lOrnA) = tOKO, l00oC~ID = 5OILA)
Reverse Voltage - V RM (RoK 200 - - volts
= 10KO, l00 oC"IR = 5OILA)
On-State Voltage - VTM - 1.1 1.3 volts
Reverse Current IR - 10 microamps (ITM = .3 amp)
(VR =3V)
Off-state Current - IDM (VDM = - - 50 microamps
200V, TA = 100oC, RoK = 10K)
Reverse Current - IRM (VRM = - - 50 microamps
200V, TA = l00 oC, RoK = 10K)
Capacitance C] 50 - picofarads Capacitance (Anode-Gate) - 20 - picofarads
(V = O,f= IMHz) V=OV,f= 1MHz (Gate-CathodeJ - 350 - picofarads
coupled electrical characteristics (25°e)
Input Current to Trigger (VAK = 50V, RoK = 10Kn) HIICI, C2 - - 20 milliamps
HlIC3 - - 30 milliamps
Input Current to Trigger (VAK = lOOV, RoK = 27Kn) HIICl, C2 - - 11 milliamps
HlIC3 - - 14 milliamps
Isolation Resistance (Input to Output Voltage = 500VDc) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f= IMHz) - - 2 picofarads
Coupled dV/dt, Input to Output (See Figure 13) 500 - - volts/Ilsec
Covered under U .L. component recognition program, reference file E51868

'M
. . 248
! H11C1, H11C2, H11C3!
12
NORMAUZEO TO
VAK -50V
50
HGI< -10K 10
~ RGK =300.n.
TA -2S·C f-
0
RGK -300.n. IK
5
I.
r--
10K
I
I S
.5 27•
56k
27.
.6K -...
2
J NORMALIZED TO
10 50 too 200 YAK ",sov
VAK -ANODE TO CATHODE \IOLTME-VOLTS RGK = I~K
TA =~·C
J
-60 -40 -20 o 20 40 60 80 100 120
TA -AMBIENT TEMPERATURE--c
VS ANODE·CATHODE VOLTAGE
FIGURE 2. INPUT CURRENTTO TRIGGER
VS TEMPERATURE
100
NORMALIZED TO
VAK "SOV
RGK :IOK
TA .:25'"C
0
..
0
10
•
I,
'r-,
.........
---- RGK "300.n.
IK
-~ NORMALIZED' TO
VAK- SOV 'r-..
RGK -IOK 2
.........
J~~~~~~ r-- r-
TA -25-<=
, 'I~ 10K
.s
""'«{,i .6
....... .........
............ ~ 27'
.0
~~
.
.2
J
4 6 8 10 20 40 60 100 200 400 1000
PULSE WIDTH-MICRO SECONDS

VS PULSE WIDTH
-40 20
•
TA - AMBIENT TEMPERATURE--c

DISTRIBUTION VS TEMPERATURE
;100
24
22
Ii 10
1
I:
~ 16
\
\ VAK·SOVOLTS
ton -td "'"
I I
..5
I 14
.\ "GK" K
'r=IJ'MC
J
I
~ 10
12
."-
~ ......
'"" ~
..:..... 0.1 I
•,1 8
~ :::::-J2.
56k
--=
--
- .... --
"
.01
I
4
-
I
0.5 LO 2D 3.0
V,- _ _T_-VOI.T5
10 20 30 40 60 70 80 80 100
., -INPUT CURRENT - MIL~I"'PERES

FIGURE 5. TURN ON TIME VS INPUT CURRENT If VSV f
, 249
TYPICAL CHARACTERISTICS OF OUTPUT (SCR)
.IH11c1, H11C2, H11C31
I0,00O 1000
F NOTE: en lEAD TEMPERATURE MEASURED AT THE ·WIDEST PORTION
600
F= OF THE seR ANODE LEAD
s.ooo
+::= -- .. 400 f--
It .-- (2)AM...£NT TEMPERATURE MEASURED AT A POINT
V2- FROM THE DEvtCE,
ni'~"
~200
"oM· 3OOon.
i~~':>Dtot--::o<
.~
-
100
1000 r- ~ 6a
!.~40
i ~
1-2a
-- -
500
! ........ ~
~!.! - 10
~
~.
a
100
.::::: ::-...... I--r- i--IOK
27M
-~
I------
i 6
4
2
I .........
i-'"
~ 50
is 2 4 102040 100
~
6
'f 56K ~
~%
r-.
VAK ' 50V
1
10
-40 -20 0 20 40 60 80 100
IMPEDANCE
TA -AMBIENT TEMPERATURE-"C

VS TEMPERATURE
100
90 ~"
NORMALIZED 70
\~,
VAK -50Y
TA -25-C
/ \\ \ 1\'
I'..
\, \'\
1000
\\\ ,
500
/
/ .1 1\\ \ "
.....2Ocry 1/
1\\ \ '~
~~
.A~~~~~.JiMP
50V
AMBIENT TEMP
HALF-SINE W:~ , \ " \
I II 10
\ \
\" \ '\
'"
AMI TEMPI' ANOOE LEAD TEMP
5 OCCURRENT 112 SINE WAVE AVERAGE
1/ 0.2 0.4 0.6 o.e 1.0

I ON S:ATE CURRENT - AMPERES
~
I
I.
FIGURE 10. ON STATECURRENT
25 50 75 100
TA -AMBIENT TEMPERATURE--t VS MAXIMUM ALLOWABLE TEMPERATURE
FIGURE 9. OFF STATE FORWARD
CURRENT VS TEMPERATURE
100a 2
500
---!
I
J~
"- .8
~ """ ~
-- -l .8
.4
rl
RGK ·300.n."'5;
-
=
r---
.
II)
a:
~
.2
" ...........
~
I 0 .I
•
"
IK............ ~ .0
o~. ~
I ~ .0
• I- JUNCTION TEM~ERATURE ~ ~·c
5 ..13'"Ii .0 4
~IJuJCTI~N ~E!PEtT~RE~ lc1c

"- .......... " ......... IiiI .0 2
• "" "- "",

.......
"-
.......
~7K
10 r---
..
~o.oI
.. I>-
\.~
i~
INCREASES TO FORWARD
aREA"OVER VOLTAGE
~56K o 1.0 2.0 3.0 ' 4.0
25 50 75 100 V,-ON-STATE VOLTAGE -VOLTS
TA -AMBIENT TEMPERATURE '""C.
FIGURE 12. ON-STATE

FIGURE 11. dV/dt VS TEMPERATURE CHARACTERistiCS
250
IH11C1, H11C2, H11C31
TYPICAL APPLICATIONS i
10A, T2L COMPATABLE, SOLID STATE RELAY LOAD

47.1\.
Use of the HIlCI for high sensitivity, 2500 v
isolation capability, provides this highly reliable O.I}1F "CONTACT"
solid state relay design:. This design is compatable 120VAC
with 74, 74S and 74H series T2L logic systems
inputs and 120VAC loads up to lOA. IN5080(4) 47
INDICATOR
LAMP
25W LOGIC INDICATOR LAMP DRIVER

of the HII C allow it to directly couple, without buffers, T2L 100 A
120VAC
and DTL logic to indicator and alarm devices, without danger
O.lpF
of introducing noise and logic glitches.
Use of the high voltage PNP portion of the HII C provides a 200V
transistor capable of conducting positive and negative signals with current
transfer ratios of over I %. This function is useful in remote instrumentation,
INPUT r- HIIC~
:Y -~-- --loUTPUT
L _______ J
high voltage power supplys and test equipment. Care should be taken not to
exceed the HIIC 400 mW power dissipation rating when used at high voltages.
FIGURE 13
COUPLED dV/dt - TEST CIRCUIT
Vp = 800 Volts
tp =.010 Seconds
f = 25 Hertz
TA = 250 C
t T---
Vp
, .6jVp
~ tp
RAMP GEN.
251
SOLID STATE .
@ D cO ELECTRONICS
Photon Coupled Isolator H11C4 , H1'1C5, H11C6
MILLIMETERS ,INCHES'
.~
SVMBOL NOTES
Ga As Infrared Emitting Diode & Light Activated SCR MIN. MAl<. MIN. MAX.
A 8.38 'r 8.89 ,330.1 .350
B 7.62 REF. .300 REF. 1
C 8.64 - ,340 2
D
E - I
.406 .506
5.06
.016
-
,020
.200 3
F 1.01 1.7.8 .040 ,070
G 2.28 2.80 ,090 ,110
H - 2.16 - .065 4
J ,203 .305 .008 .012
K' 2.54 - .100 -
INFRARED EMITTING DIODE M - 15° - 15°
N .381 - .015 -
Power Dissipation *100 milliwatts P
R
-
2,92
9.53
3.43
-
.115
,375
.135
}<orward Current (Continuous) 60 milliamps S 6.10 6.86 .240 .270
Forward Current (peak) 3 ampere NOTES:

I, INSTALLED POSITION LEAD CENTERS,
(Pulse width l~sec 300 P Ps) 2. OVERALL INSTALLEO DIMENSION,
Reverse Voltage 6 volts 3, THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE.
*Derate 1.33mW/oC above 25°C ambient. 4, FOUR PLACES,
PHOTO - SCR TOTAL DEVICE

Peak Forward Voltage 400 volts Storage Temperature -55 to 150°C
RMS Forward Current 300 milliamps Operating Temperature -55 to 100°C
Forward Current (Peak) 10 amperes Lead Soldering Time (at 260°C) 10 seconds
(1 OO~sec I % duty cycle) Surge Isolation Voltage (Input to Output).
Surge Current (10m sec) 5 amperes H11 C4 3535V'(peak) 2500V'(RMS)
Reverse Gate Voltage 6 volts HIt C5-HII C6 2500V (peak) I770V (RMS)
Power Dissipation (25°C Ambient) ** 400 milliwatts Steady-State Isolation Voltage (Input to Output).
Power Dissipation (25°C Case) ***1000 milliwatts
HI1C4 2100V, (peak) I 500VI(RMS)
**Derate ,S.3mW/oC above 25°C ambient.
***Derate 13.3mWrC above 25°C case. HllC5-HllC6 1500V (peak) 1060Vi(RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO - SCR MIN. TYP. MAX. UNITS
Forward Voltage VF 1.2 1.5 volts Off-State Voltage - V OM (RaK 400 - - volts
(IF = lOrnA) = lOKO,. 100°C, 10 = 150"A)
Reverse Voltage - V RM (RaK 400 - - volts
= loQKO, 100°C; 10 = 150"A)
On-State Voltage - V-iM - 1.1 1.3 volts
(lTM = .3 amp)
(VR = 3V)
Off-state Current - 10M '(VOM = - - 150 miCroamps
400Y, T A = 100°C, RaK = 10K)
Reverse Current - IRM (VRM = - - 150 microamps
4OOY, T A = 100 o e, RaK = 10K
Capacitance CJ 50 - picofarads Capacitance (Anode.Gate) - 20 - picofarads
(Y= O,f= lMHz) V=OV,f=lMHz (Gate-Cathode) - 350 - picofarads

Input Current to Trigger (YAK = 50V, RaK = 10Kn) HllC4, C5 - - 20 'milliamps

H1ic6 - - 30 milliamps
Input Current to Trigger (VAK = 1Q()'V, RoK = 27Kn) HI1C4, C5 - - 11 milliamps
HllC6 - - 14 milliamps
Isolation Resistance (Input to Output Voltage = 500Vn cJ 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) - - 2 picofarads
Coupled dv/dt, Input to Output (See Figure 13) 500 - - volts/~sec
'N Covered under U.L. component recognition program, reference me E51868

252
2
IH11C4, H11C5, H11CSr
NORMALIZED TO
VAK -:sOV
10
RGK *IOK
TA -2S·C
a[::: [::: RGK -3OO.n.
10
RGK "300.1\
. IK
5
Ik 2.
t--
.0 10K
""" a
I
10k
" •• 2T.
r-
56k ........ 4
56K
............. r-
2
.1 NORMALIZED 10
10 50 100 200 400 VAK '50V
RGK -10K
VAK -ANODE TO CATHODE VOLTAGE-WLTS
TA -25-C
J
-60 -40 -20 o 20 40 60 80 100 120
TA -AMBIENT TE.MPERATURE-ec
VS. ANODE·CATHODE VOLTAGE
VS. TEMPERATURE
NORMALIZED TO
VA. -5OY
RGK -10K
T -25-C
40
-;;;t-..
20
10
6
4
,
"""
-- RGK -300.n.
IK
NORMALIZED TO
VAIC-50V
'"
~
RGK·IOk 2
~~ ....... r--
~ ....
-
TA -25-( 10K
i..
I t
....... fIIlll
.8
........
-10TH PERCENTILE ""«,(j .6
.......... 1...
&6K
•
~t: I'--
.z
.' J
.. 6 . 10 20 40 60 100 200 400 ICOO
PULSE WIDTH -MICRO SECONDS

VS. PULSE WIDTH
-. -2
" ..
TA - AMBIENT TEMPERATURE--C
2 I
I: •
6
..." •
I,
\
,
\
1\
VAK • 50 VOLTS
tOA ·'d +tr
Ir=II'MC
I
~, 2 !\ ""."K
I
.\,
" '" -- -
f
~I0
Ji 8 ~ I'-.
~ ~K .0I
l
-- -
6
56K
0
2
- --,
.QOI
0" I.D 2D &0
10 20 30 TO 60 80 90 100 V,-FOIIWMD VOLT_-VOL TS
IF -INPUT CURRENt - MILLIAMPERES

FIGURE 5. TURN·ON TIME VS. INPUT CURRENT IF VS. VF
253
IH11C4, H11C5, H11Cai TYPICAL CHARACTERISTICS OF OUTPUT (SCR)
10.000 1000
~ NOTE: UlLEAO TEMPERATURE MEASURED AT THE WIDEST PORTION
600
1= OF THE SCI! ANODE LEAO
~
5,000 ",400 (2) AMStENT TEMPERATURE MEASURED AT A POINT
r V2. FROM THE DEVICE
lIi''l::,,-
~200
I~:!,:-:""
"",,0300on.
~ '00
or- t-- a 60
'00 '..40
:3 ;ij
f5 50 ~ 20
I,.
2
0
- -r--
t-..
r:::: r-..... r-- NO!< i
~
... 0
6
4
I/~
2 v-
27. ,1/
'0 -40 -20 o 20

I"""-
.40
56K
VAK =50V
60
- 80
t-..
100
IMPEDANCE
10 20 40 100
TA -AMBIENT TEMPERATURE-OC

VS. TEMPERATURE
100
~,
'0,000
5000
90
\,,\,
\,\1\'.
NORMALIZED TO
VAK ·SOV 1',
... TA -2'·C
J
\\ \',
~ 1000
...~
!
500
, /
\ ~\ \ ~
1/ LI
~
o
/ / 1\\ \ "
1 100
\\ 1\ '~ !.ANODE LEAD TEMP
, ,
\ ,,
DC CURRENT
~ 50
AMBIEN7 TEMP~ , f"
..
::;
HALF-5INE WAVE
AVG
-,
i, 400V II k, \ \ \. \
-\.
~ 10 10
AMBTEMPI ANODE LEAD TEMP
OCCURRENT 112 SINE WAVE AVERAGE
5
0.2 0.4 0.6 LO
) ON STATE CURRENT - AMPERES
I
o
V
25 50 75 100'
FIGURE 10•. ON·STATE CURRENT VS.
lA-AMBIENT TEMPERATURE-·C MAXIMUM ALLOWABLE TEMPERATURE
FIGURE 9. OFF·STATE FORWARD
1000 2
J~
500
.....
......
..
.8
I
In
r/
~
.....
i'-.. ---l .4
"Ok .300.n.""s ~
..
II: .2
~
0
~
f',.
....... .
:E
I 0 .I
~
I ........ ~ .0 I
0
~ .0 • J- JUNCT'ON TEMPERATURE' 2SoC
o~
5
.....
..li .04
e--1~JT1JElpEtTrR~ '~.C
t; .0 2
t-- ...... ""'- ..... Z
I
~'" "-
o
0 1'-. ~o.oI
IO~I--
.S
'" ""'- '.1--

I.......
...........27. ... ). INCREASES TO FORWARD
BREA"OVER VOLTAGE
~. o 1.0 2.0 3.0 4.0
25 50 75 100 V T-ON-STATE VOLTAGE -VOLTS
TA ·AMBIENT TEMPERATURE.-c
FIGURE 12. ON-8TATE

FIGURE 11. dv/dt VS. TEMPERATURE CHARACTERISTICS
254
IH11~, H11C5, H11~1
10A, T2L COMPATI8LE, SOLID STATE RELAY LOAD

470 J\. 100 .n. 47.n.
Use of the HII C4 for high sensitivity, 2500V iso-
lation capability, provides this highly reliable solid
state relay design. This design is compatible with
tVJJ--~!!C~ -.,
"COIL" . IL ______
:: JI
O.lpF 'bONTACT"
220VAC
74, 74S and 74H series T2 L logic systems inputs 56K
'+----(;It--
and 220V AC loads up to lOA.
IN50eo (4)
INDICATOR
'LAMP
25W LOGIC INDICATOR LAMP DRIVER

of the HII C allow it to directly couple, without buffers, T2 L
of introducing noise and logic glitches.
Use of the high voltage PNP portion of the HII C provides a 400V transistor
capable of conducting positive and negative signals with current transfer
ratios of over I %. This function is useful in remote instrumentation, high
voltage power supplies and test equipment. Care should be taken not to ex-
ceed the HII C 400 mW power dissipation rating when used at high voltages.
FIGURE 13
COUPLED dv/dt - TEST CIRCUIT
v p = 800 Volts
tp =.010 Seconds
f = 25 Hertz
TA = 250C
Vp
f T---
, .6jVp
~ tp
RA.MP GEN.
255
SOUDSTATE
@~ co ELECTRONICS
Photon Coupled Isolator H74C1, H74C2
Ga As Infrared Emitting Diode & Light Activated SCR
MILLIMETERS INCHES
NOTES
TTL Interface S"I'MBOL
A
MIN. MAX.
8.387.62IREF.
8.891
MIN._ MAX.
.330 -' .350
B .300 REF. 1
The General Electric H74Cl and H74C2 are gallium arsenide C - 8.64 - .340 2
infrared emitting diodes coupled with light activated silicon D .406 .508 .016 .020
controlled rectifiers in a dual in-line package. They are spec- E - 5_08 - .200 3
F 1.01 1.78 .040 .070
ifically designed to operate from TTL logic inputs and allow G 2.28 2.80 .090 .110
control of 120 or 240V AC power with 7400, 74HOO and H - 2.16 - _085 4
J .203 .305 .008 .012
74S00 series logic gates. It can also control up to 400VDC K 2.54 - .100 -
power circuits. They are guaranteed and specified to oper- M - 15· - 15·
ate over TTL voltage and temperature ranges using stand- N .381 - .015 . -
P - 9.53 - .375
ard tolerance components. R 2.92 3.43 .115 .135
S 6.10 6.86 .240 .270
NOTES:
1. INSTALLED POSITION LEAD CENTERS_
absolute maximum ratings: (25°C) (unless otherwise specified) 3. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE. 4. FOUR PLACES.
INFRARED EMITTING DIODE PHOTO - SCR

Power Dissipation *100 milliwatts Peak Forward Voltage
Forward Current (Continuous) 60 milliaInps H74C1 . 200 . volts
Forward Current 1 ampere H74C2 400 volts
(peak 100J,tsec 1% duty cycle) RMS Forward Current 300 milliamps
Reverse Voltage 6 volts Forward Current 10 amperes
(peak, 1ooJ,tsec 1% duty cycle)
*Derate 1.33 mW/oC above 25°C ambient.
Surge Current (10 mSec) S amperes
Reverse Gate Voltage 6 volts
Power Dissipation (2S0C Ambient) ** 400 milliwatts
Power Dissipation (2S0C Case) ***1000 milliwatts
**Derate 5.3 mW/oC above 25°C ambient.
***Derate 13.~ mW/oC above 25°C case.
electrical characteristics of H74C
*All specifications refer to the following bias configuration (Figure 1) over the full operating temperature (O°C to 70°C) and logic
supply voltage range (4.S to S.SVoc) unless otherwise noted.
SCR Leakage, Logic Gate VOUT(l), Both Directions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SO J,tAMax.
SCR Drop, Anode Positive, Logic Gate VOUT(O), ITM = 2S0mA. . . . . . . . . . . .. . . . . . . . . . . . . 1.3 V Max.
Coupled dv/dt to Trigger, Voc to VAC ( 2S O) •••••••..••••••••••••..••••••.••••.•• SOO V/J,tsec. Min.
Capacitance (Input to Output Voltage = 0, f = 1 MHz). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 2 pF Max.
Isolation Resistance (Input to Output Voltage = SooVoc) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Gigaohms Min.
Tum-On Time of SCR; VOUT(O), Input to Output (2S0C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 J,tsec. Max.
Voc=5r.5V
Figure 1. H74C BIAS CIRCUIT Figure 2.
'" ~overed under U .L. compon~nt recognition program, reference file ES1868
@ VDE Approved to.0883/6.80 OllOb Certificate # 3S025 256
absolute maximum ratings-total device .
TABLE 1. Characteristics required of TTL gate which is to be interfaced with H74C.
H74C1,~74C2 I
SCRCurrent See Figure 4
Operating Temperature Range· OOC to 70°C
TEST CONDITIONS. FIGURE 2 LIMITS
Operating Voltage Range, V DC 4.5 to 5.5VDC
. H74Cl 50 to 200 Vpk PARAMETER Vee liN ISINK
Operating Voltage Range, H74C2 MIN. MAX. UNITS
50 to 400 Vpk MIN. MAX. MIN. MAX. MIN. MAX.
Storage Temperature Range ·55°C to 150°C
Lead Soldering Time (at 260OC) 10 sec. Max. VOUT(1) 4.5V -OAmA 2.4 Volts
Surge Isolation Voltage VOUT(O) 4.5V 12.0mA 0.4 Volts
(lnputto Output)
2500V <Peak) 1770VRMS
Steady-State Isolation Voltage
(Input to Output)
1500V(peak) 1000VRMS
1000
F NOTE: U)LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION
~
600 Of THE SCR ANODE LEAD
TYPICAL CHARACTERISTICS OF OUTPUT ",400
f= (21 AMSIENT TEMPERATURE MEASURED AT A POINT
nt'=;'~:T""'"
lI! V2· FROM THE DEVICE
~ 200
(SCR) I:~:~~-k
!i! '00
i~ 60
- .. 40
Q
5 iI~ 20
1&.1
:::;tS ! 10 I........-
0.1&.1
0.(1)
C :I.
t'--.. ~
!It 6
~
1&.1 ....
!!!~
!.. 4 ~
1t:..J 2
... g 1.0
0 , ,1/
1&.11&.1 0001 0.004 0.01 Q02 004 0.1 02 0.4 10 20 40 100
!iiI:) "- 0.002 TIME-SECONDS
0.5
~~
co
........
........
!:2>
I FIGURE 2. MAXIMUM TRANSIENT THERMAL IMPEDANCE
1-0
56~, 70 \
u;
ii:1t:
, ~
;3
;> ...
,
I ~ 60'~--~~--~~t-----~------t------1
III:
... ::>
25 50
70 100
.
:
Q.
50'~-----*~--~~~---~----~t------1
FIGURE 1. dv/dt VS. TEMPERATURE ~ ~,~----~~~--~--~~------L------1

...
..J
!i
1&.1
50
VAl< -400V
/ I
.OJ
:50 AMBIENT TEMP
HALF-SINE WAVE
ct:
ct:
::)
;J 20 AVG
,
U
0
'"
<[
~
1&.1
10
V lhov Ii "''~----~--~~~~~1I2~S~~-~~~~~~E~~~:E~~-M-E--~
!it
'"~ Iii 0.2 0.4 0.6 O.B 1.0
...!::!
0 II.
II.
0
5 NORMALIZED TO
VAK -50V
t--
t--
ON STATE CURRENT - AMPERES
..J
<[
/ / I-- FIGURE 4. ON-STATE CURRENT VS.
I / V TA -25"C
i MAXIMUM ALLOWABLE TEMPERATURE

...
'0 V V
I 2
25 50 75 100
TA -AMBIENT TEMPERATURE-"C .1'1
.I
fl
FIGURE 3. OFF-STATE FORWARD CURRENT VS. TEMPERATURE .6
.4
<I)
1&.1
It:
500
..... .2
1&.1 ....III:
0.
:IE
c
0
.
Q.
2
, 0 .I
It: . . .0 8
z
2, 100 ........... ~
U
~ .0 6
III: ~ JUNCTION TEMPERATURE = 2S0C
I-
Z
1&.1
.
~ J) 4
-1~UJCTl~N ~E~PEtT~RE~ IO~'C

It:
It:
::I
50
""'-
e
,
z
.0 2
U
o
~
I:)
z
is
..J
0
RGK=56K -,, M
~o.oI
:z:
H
2:
10
-40 -20 o 20 40
VAK·~V I
60 7080 100
...,'" \~I-
- 'NC~EASES TO FORWARD
BREAKOVER VOLTAGE
o 1.0 2.0 3.0 4.0
TA -AMBIENT TEMPERATURE-"C VT-ON-STATE VOLtAGE -VOLTS
FIGURE 5. HOLDING CURRENT VS. TEMPERATURE FIGURE 6. ON-STATE CHARACTERISTICS
257
.SOLID STATE
@ CO ELECTRONICS
Photon Coupled Isolator H11D1- H11 D4 SYM!OL
MILLIMETE~
MIN. MAX.
INCHES
MIN. MAX.
NOTES
Ga As Infrared Emitting Diode & NPN Silicon High Voltage Phot~-Transistor A

B
8.38.1 8.89
7.62 REF.
I .330 I .350
.300 REF. 1
C - 8.64 - .340 2
The General Electric H1101·H11D4 are gallium arsenide, infrared D .406 .508 .016 .020
emitting diodes coupled· with silicon high voltage photo-transis. E - 5.08 - .200 3
F 1.01 1.78 .040 .070
tors in a dual in·line package. G 2.28 2.80 .090 .110
H - 2.16 - .085 4
absolute maximum ratings: (25°C) J

K
.203
2.54
.305
-
.008
.100
.012
-
M - 15° - 15°
INFRARED EMITTING DIODE N .381 - .015 -
P - 9.53 - .375
Power Oissipation *100 milliwatts R 2.92 3.43 .115 .135
S 6.10 6.86 .240 .270
NOTES:
Forward Current (peak) 3 ampere 1. INSTALLED POSITION LEAD CENTERS.
(Pulse width lJ,tsec 300 P Ps) 2. OVERALL INSTALLED DIMENSION.
SEATING PLANE.
*Derate 1.33mWjDC above 25°C ambient. 4. FOUR PLACES.
TOTAL DEVICE
PHOTO·TRANSISTOR
Storage Temperature ·55 to 150°C
H11D1·D2 H11D3-D4
Operating Temperature ·55 to 100°C
Power Dissipation **300 **300 milliwatts Lead Soldering Time (at 260°C) 10 seconds.
VCER .300 200 volts Surge Isolation Voltage (Input to Output).
VCBO 300 200 volts Hll01 3500V(peak) 2500V(RMS)
VECO 7. 7 volts H1102, 03, D4 2500V(peak) 1770V(RMs) .
Collector Current 100 100 milliamps Steady-State Isolation Voltage (Input to Output).
(Continuous)
Hll01 2100V(peak) 1500V(RMS)
**Derate 4.0mW/oC above 25°C ambient. HII02, 03, D4 1500V(peak) 1060V(RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-TRANSISTOR MIN. MAX. UNITS
Forward Voltage 1.1 1.5 volts Breakdown Voltage - V(BR)CER 01,2 300 - volts
(IF= lOrnA) (Ic = lmA; IF = 0, RBE = 1 meg) 03,4 200 - volts
Breakdown Voltage - V(BR)CBO 01,2 300 - volts
(lc = 100J,tA; IF = 0) 03,4 200 - volts
Reverse Current - 10 microamps Breakdown Voltage - V(BR)EBO 7 - volts
(IE = 100J,tA; IF = 0)
(VR =6V)
Collector Oark Current - ICER ,
RBE =1 meg.
(VcE=200V;I F=O;TA= 25°C) 01,2 - 100 nanoamps
Capacitance 50 - picofarads (VcE=200V;I F=0; TA = 100° C) 01,2 - 250 microamps
(V= O,f= 1MHz) (VcE=lOOV;IF=O;TA= 25°C) 03,4 - 100 nanoamps
(VcE=lOOV;IF=O; TA =lOO°C) 03,4 - 250 microamps

OC Current Transfer Ratio (IF = lOrnA, VCE = lOY, RBE = 1 meg) H1101,02,03 20 - - %
H1104 10 - - %
Saturation Voltage - Collector to Emitter (IF = lOrnA, Ie = O.5mA, RBE = 1 meg) - 0.1 0.4 . volts
Isolation Resistance (Input to Output Voltage = 500VD c) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f=lMHz) - - 2 picofarads
Switching Speeds: Tum-On Time - (VCE = lOY, ICE = 2mA, RL = lOOn) - 5 - microseconds
Tum·OffTime - (VCB = lOY, ICE = 2mA, RL = lOOn) - 5 - microseconds
'iU Covered under U.L.

component recognition program, reference file E51868
@ VOE Approved to 0883/6.80 01 lOb Certificate # 35025 .
258
IH11D1 - H11D41
I
10 10
-
--
/
/' ..:Ii....
--
IF-20mA
z
il
5~
IF-IOmA
/ ID
/
NORMALIZED TO: ..
o
Q
/ VCE 010 VOLTS

N
j
-=---
----
I IF-IOmA
IF"'SmA
RBE"lmB,
~I
/
/
.. '"
III
U
NORMAUZED TO:
VeE. 10 VOLTS
IF-lOrnA
RBE"lmo,
TA o+25O C
I
46810
IF-INPUT CURRENT -mA
20 40 eo 80100 -15 +25
TA-AMBIENT TEMPERATURE-"C
+65 +100
1. OUTPUT CURRENT VS INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE
,." ...."
1000 10 IF= m4
IOD '"
I~ /
~ 10
.."
!i;
I
I - 1Fil?rl'
a
I
I
i:u ID
Ie I
IF-SmA
il I If
I..
I
...
O.I
i
'"
I
~ II
DRMAL.IZED TO:
.0I
/ I
...'"
III
U
VeE -'0 VOLTS
IFclOmA
'RBE" me,
.00 I
Q .5
/ 1.0 1.5
VF-FORWARO VOLTAGE-VOLTS
2.0
.0 I
.01
V
I
I 10 100
VCE - COLLECTOR TO EMITTER VOLllIGE -VOLTS
III
III 1000
104~ :500
./ I.;~~:~~~~
1"'-
•.1 I ~
...
I
280
..........
~Fo80mA
VeBolOV
. / ",. / ....z
200
"'"
'/'//
././
'07~r:TO:-
'~~~~200VOLTS
"i3
..:I
OJ
.."g
u
..J
180
'" ~
~
I ..J
---
100 VCSc200V
"'"--
0
u
RBE"lm., I
.. /lFolOmA VCBolOV
10'1
TA' +25 0
::l
80 J...VCBoIOV
IF'5mA
I-- ~--
---
-/-IFolomA
---
lef2
+2
TrAMB~::~T '.mr.n.~l~;;._"C
+1(10 +12 0
-50 - TA -AMBIENT TEMPERATURE
25 ze
0 ...
-"C
+50 +75 +100
5. NORMALIZED DARK CURRENT 6. COLLECTOR BASE CURRENT

VS. TEMPERATURE VS. TEMPERATURE
259
~IU~TAft:.
@D co ELECTRONICS
H11F1, H11F2, H11F3
Photon Coupled Bilateral Analog FET
The General Electric HIIF family consists of a galliutn arsenide infrared
emitting diode coupled to a symmetrical.bilateral silicon photo detector. The
detector is electrically isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low level A.C. and D.C.
analog signals.
m
FEATURES:
As a Remote Variable Resistor-
• :E;; loon to ~ 300Mn
As An Analog Signal Switch -
• Extremely Low Offset Voltage
rf1
R
P..-
Hf--lFf-
I
il
I
• ~ 99.9% linearity • 60V pk-pk Signal. Capability
• <;; 15 pF Shunt Capacitance • No Charge Injection or Latchup L- '
• ~ 100G n I/O IgolatiionResistanoe G I'
• ton' tofT:E;; 15psec. --11- 0
Absolute Maximum Ratings: (25°C Unless Otherwise Specified)
MILLIMETERS INCHES
SVMBOL NOTES
INFRARED EMITTING DIODE MIN. MAX. MIN. MAX.
A 8.381 8.89 .330 J .350
Power Dissipation TA =25°C *150 milliwatts B 7.62 REF. .300 REF. 1
Forward Current (Continuous) 60 milliamps C -

.406
. B.64 -
.016
.340
.020
2·
0 .508
Forward Current (peak) E -
1.01
5.08 -
.040
.200
.070
3
F 1.78
(pulse Width l00psec 100 pps) 500 milliamps G 2.28 2.80 .090 ;110
Forward Current (peak) H - 2.16 - .085 4
J .203 .305 .008 .012
(Pulse Width lpsec 300 pps) 3 amps K 2.54 - .100 -
Reverse Voltage 6 volts M - 15' - 15'
N .381 - .015 -
*Derate 2.0 mWrc above 25°C. P - 9.53 - .375
R 2.92 3.43 .115 .135
S 6.10 6.86 .240 .270
NOTES:
PHOTO DETECTOR 1. INSTALLED POSITION LEAD CENTERS.
·2. OVERALL INSTALL,ED DIMENSWN,
Power Dissipation 3. THESE MEASUREMENTS ARE MADE FROM THE
BreakdQwn Voltage SEATING PLANE.
4. FOU R PLACES.
HllFI - HllF2 ± 30 volts
HllF3 ± 15 volts
Detect()rCurrent (Continu@)us' ±100 milliamps
**Derate 4.0 mWrC above 2S~C.
TOTAL DEVICE
Storage Temperature -55 to +I50°C

Operating Temperature . -55 to +100°C
Lead Soldering Time (at 260°C), 10 Seconds
Surge Isolatlon Voltage (Input to Output)
HllFI-HllF2 2500 V(peak) 1770 V(RMS)
HllF3 1500 V(peak) 1060V(RMS)
HllFl-HllF2 1500 V(peak) 1060 V (RMS)
HllF3 1000 V(peak) 700V(RMS).
TYPICAL LOW LEVEL OUTPUT CHARACTERISTIC

'iI.ICovered underU.L. component recognition program, reference file E51868
260
Individual Electrical Characteristics: (25°C Unless Otherwise Specified) I H11F1,H11F2, H11F31
INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-DETECTOR (Either Polarity) MIN. MAX. UNITS
Forward Voltage Breakdown Voltage-\'cBR) 46
(IF = 16mA) 1.1 1.75 volts (146 = lOpA; IF = 0) - Fl,2 30 - volts
- F3 15 - volts
Off-State Dark Current - 146
Reverse Current (V46=ISV;I F =0;TA = 25°C) - SO nanoamps
(VR = 6V) - 10 microamps (V46=lSV;I F =O;TA =100°C) - SO microamps
Off-State Resistance - r46
(V46 = ISV; IF =0) 300 - megohms
Capacitance Capacitance -C 46
(V = 0,£ = 1 MHz) 50 - picofarads (V46 = 0, IF = 0, f = 1 MHz) - 15 picofarads
Coupled Electrical Characteristics: (25°C)

On-State Resistance - r 46
(IF = 16mA, 146 = 100pA) HllFl - - 200 ohms
HllF2 - - 330 ohms
HllF3 - - 470 ohms
On~State Resistance - r64
(IF = 16mA, 164 = 100pA) HIIFI - - 200 ohms
HllF2 - - 330 ohms
HIIF3 - - 470 ohms
Isolation Resistance (Input to Output)
(VllO= SOOV) 100 - - gigohms
Input to Output Capacitance
(VIO= 0,[= 1MHz) - - 2 picofarads
Turn-On Time - ton
(IF = 16mA, RL = son, V46 = SV) - - 15 microseconds .
Turn-Off Time - toff
(IF = 16mA, RL = son, V46 = SV) - - 15 microseconds
Resistance, Non-Linearity and Asymmetry
(IF = 16mA, i46 = 2SpA RMS, f = 1 KHz) - - 0.1 percent
TYPICAL CHARACTERISTICS (25°C) - EITHER POLARITY
100 500 IF=18mA

'- L I
'" "-
400
I F=14mA
~
III 1'0.. 300
!il <I
I J.
IF=IOmA
I
"'"
c(
I- ;t 200
r I.
saen 10 I- IF=6mA
III "- 15 100
a:
o "- a:
a: If=2mA r . Ir=2..iA
III
N
:; "- ....... a 0
l- IF=6mA ./
! i(
'"
-100
~ 1.0
,
l-
=>
9 -200
IF=IOmIA .J
.......
C
~
~
~
2
~
NORMALIZED TO
IF=16mA
-- ... -300
-400
IF=14mh
IF=ISmh 1
;46 = 5/o'A RMS ~
I
0° I 1 -500
10 100 -200 -100 0 100 200
IF-INPUT CURRENT-mA V46 -OUTPUT VOLTAGE-mV
1.. RESISTANCE VS.INPUT CURRENT 2. OUTPUT CHARACTERISTICS
261
IH11F1,H11F2, H11F31 NORMALIZfO TO
IF-I6I11A
'-c251'A RMS
c---+~--+ TA ·25·(:
TA - AMBlfNT TEMPERATURE-·C
3. RESISTANCE VS. TEMPERATURE
100
80
.... ;
I 10,000
~
60 ""'- MAXIMUM
RMS
V~TAGE V~
"" ....
/
I 40 ""- ~
z /
!~20 ~
r... ~V V
... 1000
~ ,/
./
~
""" '"
/'"
i / 100
/
~
iii 10
/ \. I'.. ...
I/) 8
MAXI~UM
........ ./
~
lE
i
6
4
RMS
CURRENT -
....
~....
~"
I
'f 10 /
/
ico
I
2
4~ , l)
"
co
.:t ./ NORMALIZED TO
3 I' / V46 -15V
IF -0
1000 I K
1.0
0
V
u) 50
TA -25"C
75 10o
60 IOOK
r (onIRfSISTANCE-n TA-AMBIENT TEMPERATURE ··C
4. REGION OF LINEAR RESISTANCE 5. OFF-STATE CURRENT VS. TEMPERATURE
100 5
",. V
/' ./ ,,/
,/
/' /' V
c
/ / /
E
I
...!z
,/
25·Y -5S·Y /
~ /
TAO I 0 6 Y
10
/ I
I I 1 ./
I / V l46alO,.A RMS
I / / I
V ...... 200D.
V V
I
/
0.9 1.0
/ 1.1 1.2
/
VF-FORWARD VOLTAGE-V
1.3 1.4 1.5
o /
50 100 150 200
, V46-0.C. BIAS VOLTAGE-mV
250 300 3 50
6. FORWARD VOLTAGE VS. FORWARD CURRENT . 7. RESISTIVE NON·LlNEARITVVS. D.C. BIAS
262
TYPICAL APPLICATIONS I H11F1, H11F2, H11F31
AS A VARIABLE RESISTOR AS AN ANALOG SIGNAL SWITCH
ISOLATED VARIABLE ATTENUATORS ISOLATED SAMPLE AND HOLD CIRCUIT
500K
. !IOn vOUT
VINv='
..
t 0 ..
VOUT IFI
LOW FREQUENCY
@ IOKH DYNAMIC RANGE'" 70db

HIGH FREQUENCY
@IMH DYNAMIC RANGE'" 50db VOUTI

L .
z FOR OSIFS30mA z FOR O:5IF S 30mA Id
Distortion free attenuation of low level A.C. signals is accomplished Accuracy and range are improved over conventional FET switches
by varying the IRED current, IF. Note the wide dynamic range and because the H11 F has no charge injection from the control Signal.
absence of coupling capacitors; D.C. level shifting or parasitic feed· The H11 F also provides switching of either polarity input signal up
back to the controlling function. to 30V magnitude.
AUTOMATIC GAIN CONTROL MULTIPLEXED, OPTICALL V-ISOLATED A/D CONVERSION
CALL
Vn
OATA
ACQUISITION
PROCESS
CONTROL
LOGIC
SYSTEM
AGC
SIGNAL
This simple circuit provides over 70db of stable gain control for an The optical isolation, linearity and low offset voltage of the H11 F
AGC signal range of from 0 to 30mA. This basic circuit can be used allows the remote multiplexing of low level analog Signals from such
to provide programmable fade and attack for electronic music and transducers as thermocouplers, Hall effect devices, strain gauges, etc.
can be modified with six components to a high performance com- to a single AID converter.
pression amplifier.
ACTIVE FILTER FINE TUNING/BAND SWITCHING TEST EQUIPMENT - KELVIN CONTACT POLAR lTV
HIIFI HIIFI
IF TO
ASB FOR
PARAMETER POLARITY I
SENSING
BOARD CSDFOR
POLARITY 2
IF! ADJUSTS fl' IF2 ADJUSTS f2 HIIFI
The linearity of resistance and the low offset voltage of the H11 F In many test equipment designs the auto polarity function uses reed
allows the remote tuning or band-switching of active filters without relay contacts to switch the Kelvin Contact polarity. These reeds are
switching glitches or distortion. This schematic illustrates the con- normally one of the highest maintenance cost items due to sticking
cept, with current to the H11 F1 IRED's controlling the filter's contacts and mechanical problems. The totally solid-state H11 F
transfer characteristic. eliminates these troubles while providing faster switching.
263
SOLID SlATE
@ 0 © ELECTRONICS
Photon Coupled Isolator H11G1-H11G2
Ga As Infrared Emitting Diode & NPN Silicon r---~~--l
Darlington Connected Photo transistor
The General Electric Hl1G series consists of a gallium arse-
nide, infrared emitting diode coupled with a silicon, darlington
jJ . I·
, SVMBOL
MILLIMETERS INCHES
NOTES
connected, photo transistor which has an integral base-emitter 2 I I 5 MIN. MAX. MIN. MAX.
.1 J
resistor to optimize Switching speeds and elevated temperature
characteristics. IT 14
• _ _ _ _ _ _ ..1
A
B
C
D
8.38
-
:406
8.89
7.62 REF.
8.64
.508
.330
-
.016
.350
.300 REF.
.340
.020
1
2
absolute maximum ratings: (2S0C) E -

1.01
5,08 -
.040
.200
.070
3
F 1.78 ~
G 2.28 2.80 .090 .110

INFRARED EMITTING DIODE H - 2.16 - .085 4
J .203 .305 .008 .012
Power DiSSipation *100 milliwatts K 2.54 - .100 -
M - 15' - 15'
N .381 - .015 -
Forward Current (peak) P - 9.53 - .375
R 2.92 3.43 .115 .135
(Pulse width 300llsec, S 6.10 6.86 .240 .270
2% Duty Cycle) 0.5 amperes NOTES:
1. INSTALLED POSITION ,LEAD CENTERS.
(Pulse width Illsec, 300 Hz) 3 amperes
*Derate 1.33mWrC above 2S"C ambient. SEATING PLANE.
4. FOU R PLACES.
DARLINGTON CONNECTED PHOTO-TRANSISTOR TOTAL DEVICE

Power Dissipation ** 150 milliwatts Storage Temperature _55°C to +150°C
VCEO - HUGI 100 volts Operating Temperature _55°C to +100°C
- Hl1G2 80 volts Lead Soldering Time (at 260°C) 10 seconds
VCBO - HIIGl 100 volts Surge Isolation Voltage (Input to Output)
- H11 G2 80 volts 3535 V(peak) 2500 V(RMS)
VEBO 7 volts
Collector Current (Continuous) Steady-State Isolation Voltage (Input to Output)
- Forward ' 150 milliamps 2125 V(peak) 1500 Y(RMS)
Collector CUrrent (Continuous)
- Reverse 10 milliamps
**Derate 2.0mWrC above 25°C ambient.
individual
--
electrical characteristics:(25°C)
EMITTER TYP. MAX. UNITS DETECTOR MIN. TYP. MAX. UNITS
Forward Voltage 1.1 l.5 volts Breakdown Voltage - V(BR)CEO
(IF = lOrnA) (1<: = l.OmA,I F =0) - HllG1 100 - - volts
'- HllG2 80 - - volts
B~eakdown Voltage - V(BR)CBO
(Ic = 1001lA,I F =O) -HllGI 100 - - volts
-HllG2 80 - - volts
areakdown Voltage - V(BR)EBO 7 - - volts
Reverse Current - 10 microamps (IE = 1001lA, IF = 0)
(VR = 3V) Collector Dark Current - ICEO
(VcE=80V,I F =0) .:..HllG1 - - 100 nanoamps
(VcE=60Y,I F =O) -Hl.lG2 - - 100 nano~ps
(VCE =80V,IF =0,'tA = 80°C)
-HllG1 - - 100 microamps
(VCE =60Y,IF =0, TA = 80°C)
-H11G2 - -,- 100 microamps
(V = O,f= 1 MHz) (VeE =10V, f =1 MHz)
'Ai Covered under U .L. component recognition program, reference file E51868
@ VDE Approved to 0883/6.80 01 lOb Certificate # 35025.
264
.
coupled electrical characteristics"(25°C) ,
H11G1, H11G2
DC Current Transfer Ratio - (IF = lOrnA, VeE = 1 V) 1000 - - %
- (IF = 1 rnA, VeE = 5V) 500 - - %
Saturation Voltage - Collector to Emitter - (IF = 1mA,IC= 1 rnA) - 0.75 l.0 volts
- (IF = 16mA,Ic=50mA) - 0.85 1.0 volts
Isolation Resistance (Input to Output Voltage = 500VD d 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f= 1 MHz) - - 2 picofarads
Switching Speeds:
On-Time - (VeE = 5 V, RL = lOOn, IF = lOrnA) - 5 - microseconds
Off-Time - (Pulse width.so;; 300 Jlsec, f.so;; 30 Hz) - 100 - microseconds
100 100
V - IF'SOmA
./
I
IF'SmA
/ NORMALIZED TO'
TA"2SOC
I F ·1.0mA (300,.S PULSES)
NORMALIZED TO:
VCE"SV
VCE = 5V
I IF"lmA
~ ·I.OmA (300,.S PULSES)
I /
J t--- IF"O.SmA
I I
O. -50OC -25OC OOC 2SOC 5O"C 7SOC 100"C
0.1 10 100 1000
IF-INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-OC
OUTPUT VS. INPUT CURRENT OUTPUT VS. TEMPERATURE
1.000
,.- 100
1-' .... I F"50mA -

/'
-
100
!z
'"
E
...z, 10
I' il!a:
a...
10 10mA
'1 2mA
:
-
'"'"
'":>
u
~
1.0 /II ~ 1.0
I
1
'f
I
1.0mA -
;a: -
. ~ O. I O.SmA
-. .0 I / .1
/"
NORMALIZED TO'
TA "25°C
I
-=
I
.S
/ 1.0 1.5
VF - FORWARO VOLTAGE - VOLTS
i
2.0 I
ODo.l 1.0
IF=I.OmA (300,.S PULSES)
VCE-COLLECTOR TO EMITTER VOLTAGE-VOLTS

VCE =5V
10
_
20
lOOK 10
10K
/ /
\ \
'".,:.z
0:
'"
E
,:.
\ \
'"'"a: 1000 /./ /. Z
IoJ
a:
\L'IO~ ,,\o~ K
:>
() VCE"eOV ~ 1.0
'"~'" 100 ./ ./ ""-;-OV
...
()
::>
'0
.
...'"
Q.
z
~b. - NORMALIZED TO ' \.
.,.... . / ~VCE'50V _ IF "10 mA
./
10
I-
RL'IOO.ll
VCE=5V
.......... \
20
.."./
40 60 80 100
O. I
0.1
l I 1.0
TA-AMBIENT TEMPERATURE-OC 'ON + 'OFF NORMALIZED TOTAL SWITCHING SPEED
DARK CURRENT SWITCHING SPEED
265
SOLID STR"E . .
@ DcoELECTRONICS
Photon Coupled Isolator H11G3
Ga As Infrared Emitting Diode & NPN
Darlington Connected Photo transistor
SiliCOD
::n r----·---.,
I
I
\6
The General Electric HUG series consists of a gallium arse-

nide, infrared emitting diode coupled with a silicon, darlington
3o-t- ~------- ..I 4
connected, phototransistor which has an integral base-emitter MILLIMETERS INCHES

resistor to optimize switching speeds and elevated temperature S'IIVIIOl
MIN. MAX. MIN. MAX.
NOTES
characteristics, A 8.38 .1. 8.89 .330.1. .350

il 7.62 REF. .300 REF . 1
C - 8.64 - .340 2
D .406 .508 .016 .020
absolute maximum ratings: (25°C) SEATING E - 5.08 - .200 3
~tlF~
F ~.01 1.78 .040 .070
G 2.28 2.80 .090 .110
INFRARED EMITTING DIODE H - 2.16 - .085 4
Power Dissipation *100 milliwatts f ~ J

K
.203
2.54 .
.305
-
.008
.100
.012
-
M - 15' - 15'
Forward Current (Continuous) 60 milliamps B
- -
Forward Current (Peak)
(Pulse width 300 p.sec,
lr
,r:::::=- ::u-
N
P
R
.381
-
2.92
9.53
3.43
.015
-
.115
.375
.135
S 6.10 6.86 .240 .270
2% Duty Cycle) 0.5 amperes I
NOTES:
(Pulse width 1 p.sec, 300 Hz) 3 amperes 1. INSTALLED POSITION LEAD CENTERS.
P 2. OVERALL INSTALLED DIMENSION.
*Defate 1.33mWrC above 25°C ambient. SEATING.PLANE.
4. FOU R PLACES.
Power Dissipation "'*150 milliwatts Storage Temperature _55°C to +150°C

VCEO 55 volts Operating Temperature _55°C to +lOO°C
VCBO 55 volts. Lead Soldering Time (at 260°C) 10 seconds
VEBO 7 volts Surge Isolation Voltage (Input to Output)
Collector Current (Continuous) 2125 V(peak) 1500 V(RMS)
- Forward 100 milliamps Steady-State Isolation Voltage (Input to Output)
Collector Current (Continuous) 1275 V(peak) 900 V(RMS)
- Reverse 10 milliamps
**Derate 2.0mWrC above 25°C ambient.
individual electrical characteristics:(25°C)

,
(IF = lOrnA) (Ic =1.OmA, IF =0)
(Ic = l00pA, IF = 0)
Reverse Current - 10 microamps Breakdown: Voltage - V(BR)EBO 7 - - volts
(VR = 3V) (IE =100pA, IF = 0)
ColleCtor Dark Current - ICEO - 5 100 nanoamps
(VeE = 30V, IF =0)
(V = O,f= 1 MHz) (VeE =lOY, f= 1 MHz)
..
- Covered under U.L. component recogmtton program, reference ftle E51868
® VDE Approved to 0883/6.80011 Ob Certificate# 35025
266
coupled electrical characteristics·(25°C) . H11G3
DC Current Transfer Ratio:(IF = 1 rnA, VCE = 5 V) 200 - - %

Saturation Voltage - Collector to Emitter (IF = 20 rnA, Ic = 50 rnA) - 0.85 1.2 volts
Isolation Resistance (Input to Output Voltage =500 VDd 100 - - gigaohms
Switching Speeds:
On-Time - (VCE = 5V, RL = lOOn, IF = lOrnA) - 5 - microseconds
Off-Time -(Pulse width ~ 300 p.sec, f ~ 30 Hz) - 100 - microseconds
100 ~OO
~
~
! 10
V IF" 50 mA
I
" I~"5mA
I
~ 1.0
1/ NORMALIZED TO'
TA"25OC
IF"I.OmA (300,.5 PULSES)
NORMALIZED TO:
I
VCE"I!V
VCE =5V
I IF"lmA
IF -I.OmA (300,.5 PULSES)
1 O. I J
H~
0.1
J
I
10
IF -INPUT CURRENT-mA
OUTPUT VS. INPUT CURRENT

100 1000
.I
o -50OC -21!OC DOC 250C
-500C 71!OC
TA-AMBIENT TEMPERATURE-oC
OUTPUT VS. TEMPERATURE

IF"O.l!mA
IOOOC
I.DOO
,. .... 100
~ ..... I F'50mA -
./
1.
100
j' 10mA - _
!E
... 10 12mA
at
at
...:::> 1.0 I 7
rl
I
1.0mA -
~
V -
I.... O. I
I
0.5mA
.0I
/ I
1/
NORMALIZED TO'
TA'21!"c -=
I
.5
/ 1.0 I.I!
V F - FORWARD VOLTAGE - VOLTS
2.0
I
I
1
1.0
VCE-COLLECTOR TO EMITTER VOLTAGE-VOLTS
IF"I.OmA (300,.S PULSES)
VCE ,5V
10
_
20
lOOk 10
10K
/
c \ \
Z
,:.." C
E \ \.
...~ ~o.n
1JJ
at 1000 K
II: r\L",IO.n
:::> II:
u
~ 1.0
"
II:
VCE =30V
u
~0 /"
..
l-
100
it
z
..u \.
~~ I - NORMALIZED TO •
IF "10 mA
./ I-
10
I-
RL=IOO.n
VCE"5V "- 1\
20 40 60 80 100
O. I
0.1
I I La 10
TA -AMBIENT TEMPERATURE _DC 'ON + 'OFF NORMALIZED TOTAL SWITCHING SPEED
DARK CURRENT SWITCHING SPEED
267
SOLID STATE
@D© ELECTRONICS
Photon Coupled Isolator H11G45-H11G46
A
r-------.
Ga As Infrared Emitting Diode & NPN Silicon
I
.I . VB
Darlington Connected Phototransistor
~J}
6
Vo
The General Electric Hl1G series consists of a gallium H .....~5
arsenide, infrared emitting diode coupled with a silicon, I GND.
darlington connected, phototransistor which has an integral 3~ I 4
It _ _ ~·--- . .
base-emitter resistor to optimize switching speeds and
elevated temperature characteristics. These devices are . S:t:~~Gt SVMBOl
MILLIMETERS INCHES
NOTES
designed to equal the 4N45 and 4N46 characteristics while JJ_r~ ~~ MIN. MAX. MIN. MAX.
providing greater voltage and current capability. 'I OJI' A

B
C
8.38
-
J 8.89
7.62 REF.
8.64
.330.1 . .350
.300 REF .
- .340
1
2
absolute maximum ratings: (25°C) B M D
E
.406
-
.508
5.08
.016
-
.020
.200 3
F 1.01 1.78 .040 .070
INFRARED EMITTING DIODE _" . G 2.28 2.80 .090 .110
\ H - 2.16 - .Q85 4
~Hf-.....jFf- J .203 .305 .008 .012
Power Dissipation milliwatts K 2.54 - .100 -
Forward Current (Continuous) milliamps i R 1 I TIII1 M - 15' - 15'

PT"
~ ,
N
P
.381
-
-
9.53
.Q15
-
-
.375
R 2.92 3.43 .115 .135
. (Pulse width 300 J.Lsec, G I' 5 6.10 6.86 .240 .270
2% Duty Cycle) 0.5 amperes -ll-D
NOTES:
(Pulse width 1 J.Lsec, 300 Hz) amperes 1. INSTALLED POSITION LEAD CENTERS.
3
SEATING PLANE.
·Derate 1.33 mW;oC above 25°C ambient. 4. FOUR PLACES.
Power Dissipation milliwatts Storage Temperature -55°C tq +150°C

Output Voltage Vo (Pin 5-4) volts Operating Temperature -55°C to +100°C
Reverse Voltage VB (Pin 4-6) volts Lead Soldering Time (at 260°C) 10 seconds
Output Current (Continuous) Surge Isolation Voltage (Input to Output)
- Forward 100 milliamps 5656V(peak) 4000V(RMS)
Output Current (Continuous) Steady-State Isolation Voltage (Input to Output)
- Reverse 10 milliamps 5100V(peak) 3600V(RMS)
"Derate 2.0 mW;oC above 25°C ambient.
individual electric characteristics: (0-70° C)

Forward Voltage 1.1 1.7 volts Output Breakdown Voltage 55 - - volts

(IF:: 10 mA) (Pin 5-4)
154 :: 1.0mA, IF :: 0)
Reverse Current - 100 microamps Base Breakdown Voltage 7 - - volts
(VR :: 3V) (Pin 4-6)
146:: 100J.LA, IF :: 0)
Capacitance 50 - picofarads Logic High Output - 100 microamps
(V :: 0, f :: 1 MHz) (V54:: 18V, IF:: 0)
Capacitance - 6 - picofarads
(V 54 :: lOV, f:: IMHz)
'A\ Covered under U . L. component recognition program, reference file E51868

268
I H11G45, H11G46 I
coupled electrical characteristics (0-70 0 C)
MIN. TYP. MAX. UNiTS
DC Current Transfer Ratio - IF = O.5mA, Vo = l.OV HllG46 350 - %

IF = 1.0mA, Vo = l.OV HIIG46 500 - %
IF = l.OmA, Vo = l.OV HIlG45 250 - %
IF = lOmA, Vo = l.2V HllG45, HllG46 200 - %
Logic Low Output Voltage - IF = O.5mA, IOL = l.75mA HIlG46 - l.0 volts
IF = l.OmA, IoL = 5.0mA HIlG46 - l.0 volts
IF = l.OmA, IOL = 2.5mA HIlG45 - l.0 volts
IF = 10mA, IoL = 20mA HllG45, HIIG46 - l.2 volts
Isolation Resistan~e (Input to Output Voltage = 500VDC) 100 - gigaohms
Input to Output Capacitance (Input to Output Voltage = 0, f = IMHz) - 2 picofarads
switching characteristics (25 0 C)

Propagation Delay Time to IF = l.OmA, RL = lOKO tpHL - 80 - microseconds

Logic Lowat Output IF = lOmA, RL = 2200 tpHL - 5 50 microseconds
Propagation Delay Time to IF =l.OmA, RL =10KO tPLH - 1)()0 - microseconds
Logic High at Output IF =10mA, RL =2200 tpLH - 150 500 microseconds
Common Mode Transient IF =OmA, RL =10KO CMH - 500 - volts
Immunity at Logic High (VCM) = lOVp~p microsecond
Level Output
Common Mode Transient IF =l.OmA, RL =10KO CML - 500 - volts
Immunity at Logic Low (VCM) = lOVp-p microsecond
Level Output
+5V
+5V 6
MONITOR 2 Vo
vo~ 5V
SWITCH AT A: 'F=OmA
100!!
SWITCHING TEST CIRCUIT TEST CIRCUIT FOR TRANSIENT IMMUNITY

AND TYPICAL WAVEFORMS
100
,.
50
,.,. ./ " ./
./ :,.r I-
Z
/' /' /' w
1I a: - 'F-SOmA
~ 20
w
// V / a:
G
l-
10
a: =>
Q.
NORMALIZED TO: 'F=5mA=
a: TA= l 0 0 ' Y 25"y -55";/ l- T A =25"C
=> => ' F=1.0mA(JOO"S PULSES)
~ 10 o
c VO=1.0V
a: w
~
a:
N
:::;
«
fr' 5
I I
::;;
a: 1
I
~ o
I / II z
I 'F=lmA=
:r
/ /
--
_0
V r---.
~ J
.9 1.0
/ 1.1
/ 1.2 1.3 1.4 1.6
1
75"C
'F=0.5mA
100"C
VF-FORWARD VOLTAGE-VOLTS T A -AMBIENT TEMPERATURE-"C
FORWARD VOLTAGE VS. FORWARD CURRENT OUTPUT VS. TEMPERATURE
269
SOLID STArE·
@O ©.ELECTRONICS
Photon Coupled Isolator H11J1- H11J5
Ga As Infrared Emitting Diode & Light Activated Triac Driver
The General Electric H 111 series consists of a gallium

arsenide infrared emitthig diode coupled with a light
activated silicon bilateral switch, which functions like
a triac, in a dual in-line package.
\U Covered under U.L. component recognition program, reference file E51868
absolute maximum ratings: (25OC)

Power Dissipation
. Forward Current (Continuous)
*100
60
milliwatts
milliamps
l+'ti'
3+- .
6
r-----..,
2o-{---:r.. ~5
14
Pin 5 is
substrate
DO NOT
CONNECT
Forward Current (peak) 3 amperes L _____ .J

(Pulse width 1 JJ.Sec. 300 pps)
*Derate 1.33 mWrC above 2SoC ambient.
OUTPUT DRIVER
m
Off·State Output Terminal Voltage 250 volts
On-State RMS Current
(Full Cycle Sine Wave, SO to 60 Hz)
Peak Nonrepetitive Surge Current
100
1.2
milliamps
amperes
r!=-I HI- -l Ff-
P
R
-r-
I
il
I
(PW= 10ms,DC= 10%) ~ ,
Total Power Dissipation @ TA = 25°C **300 milliwatts . G~i_D
"Derate 4.0 mWrC above 2SoC.
MILLIMETERS INCHES
S\IMBDL NOTES
MIN. MAX. MIN. MAX.
A 8.38.1 8.89 .330.1. .350
TOTAL DEVICE B 7.62 REF. .300 REF. 1

C -
.406
8.64 -
.016
.340
.020
2
D .508
Operating Temperature -40 to 100°C E - 5.08 - .200 3
F 1.01 1.78 .040 .070
G 2.28 2.60 .090 .110
Lead Soldering Time (at 260°C) 10 seconds H - 2.16 - .085 4
Surge Isolation Voltage (Input to Output) J .203 .305 .008 .012
HIIJ1,HIIJ2 5656V(peak) 4oo0V(RMS)

K
M
2.54
-
-
15°
.100
-
-
15°
HllI3, HIIJ4 3535V(peak) 2500V(RMS)

N .381 - .015 -
P
R
-
2.92
9.53
3.43
-
.115
.375
.135
. HllI5 2120V(peak) 1500V(RMS) S 6.10 6.86 .240 .270
Steady-State Isolation Voltage (Input to Output) NOTES:
HllI I, HIlI2 5 lOOV(peak) 3600V(RMS) 1. INSTALLED POSITION LEAD CENTERS.
HIlI3, HIlI4 3200V(peak) 2250V(RMS) 3..THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE.
HIIJ5 I900V(ptiak) 1350V(RMS)
4. FOUR PLACES.
270
IH11J1-H11J5!
Individual electrical characteristics (25°C)
EMITTER SYMBOL TYP. MAX. UNITS
Forward Voltage Vp 1.2 1.5 volts

(IF =10mA)

(VR =3V)
Capacitance CJ 50 - picofarads
(V=O,f=IMHz)
DETECTOR See Note 1 SYMBOL TYP. MAX. UNITS
Peak Off-State Current VDRM = 250V IDRM - 100 nanoamps

Peak On·State Voltage lIM = 100mA VIM 2.5 3.0 volts
Critical Rate-of·Rise of Off-State Vpltage Yin = 30V(RMS) dv/dt 4.0 - volts/pJ$ec.
(See FigUre 6)
Critical Rate-of·Rise of Commutating I load = 15mA dv/dt(C) 015 - volts/J.lSec.
Off-State Voltage Yin =30V(RMS)
(See Figure 6)
Critical Rate-of·Rise of Off-State Voltage Yin = 120V(RMS) dv/dt 2.0 - volts/pJ$ec.
JEDEC conditions

SYMBOL TYP. MAX. UNITS
IRED Trigger Current, Current Required to Latch Output Hl111, HI113 1FT - 10 milliamps
(Main Terminal Voltage:;: 3.0V, RL = 150 Sl) HI112, HI114 1FT - 15 .milliamps
HI115 1FT - 25 milliamps
milliamps
Holding Current, Either Direction IH 250 - microamps
(Main Terminal Voltage 3.0V, Initiating Current - 10 mA)
NOTE 1: Ratings apply for either polarity of Pin 6 - referenced to Pin 4.
271
I H11J1-H11J5]
D:
III
2.0
1.8
I I
100
L.... ....
, ,
/.
..
C>
INORMALIZED AT, 50
-'" ....
~ 1.6
V64 OR V46 =3V AT 25°C
./ ./ ./
o
~ 1.4
"'e ~ V /
I 20
z
TA.l0~.y -5S-cj
I-
~ 1.2 Z
25Y
D: 'D: '"
a 1.0
-
10
I-
~
D:
ac --,
~ .8 D:
T T
c ; 5 I
I
::: .6
::::i ~ I I II
"' .4
~~
I I
S
.2
0
-50 -25 o 25, 50 75 100
I
•
)
II
.9 1.0
7 7 1.1 1.2 1.3 1.4 1.5
TEMPERATURE - ° C VF - FORWARD VOLTAGE - VOLTS
FIGURE 1. INPUT CURRENTTO TRIGGER FIGURE 2. FORWARD VOLTAGE VS.

VS. TEMPERATURE FORWARD CURRENT
500
/ ~
..- 100
,80
II)
60
'"
D: -500C/25°C V/'Oooc I-
Z
,
~400 40
:2
I /1/ '"
D:
D: NORMALIZED AT 25°C
"'::i ~
(J V46 OR V64 =250VDC
....J
~300 I /1 '"
~
20
I-
z
'"
D:
I 1/ ...~ 10 ./
D:
~
(J 200
/1 / ~
:::
8
6 /'
/'
'"
~ 'III ::::i
~ 4
/"
~ if
/
II)
~ 100
~
OF
I
V/ ...c 2
V
= - _/ 234
VT-ON-STATE VOLTAGE-VOLTS
5 678 ,9 10
I
25
------- ~
TA-AMBIENT TEMPERATURE-OC
75 100
FIGURE 3. ON-STATE VOLTAGE VS. FIGURE 4. OFF-STATE CURRENT

OUTPUT CURRENT VS. TEMPERATURE
.......
,,, ............
I'-...
1 I.
V64 OR V48 • 30V RMS AT 25°C

1
I
+
Vee 120n
6
2
. . . f'-.... HllJ 5
....... 3
r--- .....
4
r-- r--
,
~
+-5V
Vee
ov
I...
1- COMMUTATING-fsumcJ
eIY/dt -I '
o dV/dt
25 50 75 100
TA-AM8IENT TEMPERATURE - °C
FIGURE 5. dv/dt VS. TEMPERATURE FIGURE 6. dv/dt - TEST CIRCUIT
272
IH11J1-H11Jsl
TYPICAL APPLICATION CIRCUITS
TTL COMPATIBLE LOGIC CONTROL OF POWER LINE
+5 270 100
120V
RMS
SC150B
LOGIC ZERO SUPPLIES POWER TO LOAt>
RESISTIVE LOAD AND-NON-CRITICAL APPLICATIONS

LOW COST, LIMITED NOISE AND dv/dt IMMUNITY
LOGIC ZERO SUPPLIES POWER TO LOAD
INDUCTIVE LOADS AND CRITICAL APPLICATIONS

GOOD dv/dt AND NOISE IMMUNITY
+5V 270 lOOK
100
SCI60M V 270LA20
220V
RMS
0.1 0.1
INDUSTRJAL VOLTAGES AND CRITICAL APPLICATIONS

EXCELLENT dv/dt, NOISE AND OVERVOLTAGE CAPABILITY
273
SOLID STATE
@ D ©ELECTRONICS
Photon Coupled Isolator H11L 1, H11L2, H11L3
Ga As Infrared Emittin~ Diode & Microprocessor Compatible Schmitt Trigger
The HllL series has a gallium arsenide, infrared emitting diode .optically coupled across an isolating medium
to a nigh speed integrated circuit detector. The out:~ut incorporates a Schmitt Trigger which provides
hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for simplicity ofoperation
and utilizes an open collector output for maximum application flexibility.
FEATURES APPLICATIONS
• Free from latch up and oscillation throughout voltage • Logic to logic isolator
and tern perature ranges • Programmable current level sensor
• High data rate, 1 MHz typical (NRZ) • Line receiver - eliminates noise and transient
• 'Microprocessor compatible drive problems
• Logic compatible output sinks 16 milliamperes at • Logic level shifter - couples TTL to CMOS
0.4 volts maximum • A.C. to TTL conversion - square wave shaping
• High isolation between input and output • Digital programming of power supplies
• Guaranteed On/Off threshold hysteresis • Interfaces computers with peripherals
• High common mode rejection ratio
• Fast sWitching: t rise" t fall =100 nanoseconds typical MILLIMETERS INCHES
NOTES
SVIIIIOl
• Wide supply voltage capability, compatible with all MIN. MAX. MIN. MAX.
popular logic systems A 8.38 _I 8.89 ,330 J .350
8 7.62 REF. .300 REF. 1
MECHANICAL SPECIFICATIONS C - 8.64 '- .340 2
D .406 .508 .016 .020
• Plastic 6 PIN dual in line package, tin plated leads E - 5.08 - .200 3
F 1.01 1.78 .040 .070
• Lead orientation as shown: G 2.28 2.80 .090 .110
H - 2.16 - .085 4
.203 .012
r~------l J .305 .008
-
2.54 -
':j} ~6
K .100
M - 15' - 15'
-
Anode I 3 I Vee
N
P
.381
-
-
9.53
.015
- ,375
2 5 R 2.92 3.43 .115 .135
Cathode I I Ground, S 6.10 6.86 .240 .270
3~
NOTES:
• ______ ~ I v 04 1. INSTALLED POSITION LEAD CENTERS.
J. THESE MEASUREMENTS ARE MADE FROM THE
absolute maximum ratings: (25°C) SEATING PLANE. 4. FOUR PLACES.
INFRARED EMITTING DIODE TOTAL DEVICE

Power Dissipation *100 milliwatts Storage Temperature _55°C to +150°C
Forward Current (Continuous) 60 milliampere Operating Temperature _55°C to +100°C
Forward Current (peak) . Lead Soldering Time (at 260°C) 10 seconds
(Pulse width 300 p.sec. Surge Isolation Voltage (Input to Output)
2% Duty Cycle) 0.5 ampere 3535 V (peak) 2500 V (RMS)
Reverse Voltage '~volts Steady-State Isolation Voltage (Input to Output)
*Derate 1.33 mW"C above 25°C ambient. 2125 V (peak) 1500 V (RMS)
'Al Covered under U.L. component recognition program,

PHOTO DETECTOR reference file E51868
Power Dissipation **150 milliwatts
V45 Allowed Range Oto 16 volts
V65, Allowed Range Oto 16 volts
14 Output Current SO milliampere
**Derate ,2.0 mWrC above 25°C ambient.
@VDE Approved to 0883/6.80 OllOb Certificate #35025
274
I H11L 1. H11L2. H11L31
electrical characteristics: (0-70 ° C)
INFRARED EMITTING MIN. TYP. MAX. UNITS PHOTO DETECTOR MIN. TYP. MAX. UNITS
DIODE
Forward Voltage VF Operating Voltage Range VCC 3 - 15 volts

IF =10 rnA - l.iO LSO volts SupplY Current 16 (off) - 1.0 5.0 milli-
IF = 0.3 rnA 0.75 0.95 - volts (IF =O,VCC =5V) ampere
Reverse Current IR - - 10 micro- Output Current, High IOH - - 100 micro-
(VR = 3V) ampere (IF =0, Vcc=V0 =15V) ampere
Capacitance CJ - - 100 picofarads
(V=O,f= 1 MHz)
coupled electrical characteristics (0-700C)

Supply Current I6(on) - 1.6 5.0 milliampere

(IF =lOmA, VCC = SV)
Output Voltage, Low VOL - 0.2 0.4 volts
(R 64= 270 n, Vcc = SV, IF=IF(on) Max)
Tum-On Threshold Current IF(on)
(R64= 270 n, HllLl - 1.0 1.6 milliampere
Vcc =5V) HllL2 - 6.0 10.0 milliampere
Tum-Off Threshold Current
HllL3 - 3.0 5.0 milliampere
(R64= 270 n, IF(ofl) 0.3 1.0 - milliampere
VCC =5V)
Hysteresis Ratio IF(ofl)/IF(on) O.SO 0.7S 0.90 -
(R 64 =270 n,
Vec =5V)
switching characteristics (25°C) H 11 L 1

SWITCHING SPEED MIN. TYP. MAX. UNITS
RE = l200n, C=O
Turn- On Time ton - 1.0 - ILsec.

Fall Time tf - 0.1 - ILsec.
Turn- Off Time toff - 2.0 - ILsec.
Rise Time tr - 0.1 - ILsec.
RE =1200n, C=270pF, f:EO;;100KHz, tp~lILsec
Tum-On Time ton - 0.65 - ILSec.
Fall Time tf
- 0.05 - ILsec.
Tum- Off Time toff
- 1.20 - ILSec.
Rise Time - 0.07 - ILSeG •
tr
Data Rate (NRZ) - 1.0* - MHz
Overdrive Switching
VIN = 5V DC, RE = 75 .n, C=O, VCC = 5V, RL = 270 .n
Turn-Off Time
toff - - 10 ILsec.
*Maximum data rate will vary depending on the bias conditions and is usually highest when RE and Care
matched to IF(on)and Vcc is between 3 and SV, with this optimized bias, most units will operate at over 1.5 MHz, NRZ.
275
I H11l1, H11l2, H11131
switching characteristics (25°e)
c r----.~
5V Vi!5V.
t O~----~
~
. I I
I I
VIM : I
t, : tf = O.OIft.:.-AAse_c_ _----' , ..j t off I"'"
~t'" r I~
Z=50.o..
•
Vo
t
.I ~!
: ~:~~ I
I'!
I I.'
I ~ I
SWITCHING TEST CIRCUIT .~, tr
TYPiCAL CHARACTERISTICS
6 1.4
I-
I I I I
V OH
Z
1&1 I I
S a::
a::
;:) TURN ON THRESHOLD
u 1.2
T
~ -- ~ I I
~ ~
IF(OFF)
~
,
IF(ONI f:I
!I- 0.8
fiJ
N
::::i
'/
I/'
/
'7
;,.
~
TURN OFF THRESHOLD
I
NOMW.IZEO TO-
I
I
T
I
~
vcc'sv
RL"270!l
TA "2SoC
"'tj
:I 0.4 TURN ON 1ltRESHOlD
AT
z Vcc .5V. TA a 25··C
I
I
VOL ...
to. I I I r
I I
2 3 o 4 8 ~ ~
IF' -INPUT CURRENT -mA Vcc - SUPPLY VOLTAGE- VOLTS
TRANSFER CHARACTERISTICS THRESHOLD CURRENT VS. SUPPLY VOLTAGE
1..0 1.8
(II i
!:i ~ 1.6
0 o.s 17 /
...i..
> 1.4
I
/
~
9 ./
V I
1.2
/"
..r 0.2
I-
~ v
~
;.J V ~
o
1.0
v
./
~ 0.1 a ./
I- 5 o.8
;:)
II.
I-
;:)
0
I
...
.05
~
~
l..oo'"
:E:
<II
~
i=
o.6 -~
Vcc-5V Ii} O.4
~ NORMALIZED TO:
.02 """" TA =25° C
~
N
O. 2
I Vcc '5V
TA "25°C
0.01 ~
I 2 -- '5 10 20 50 IOO~ 0 -50 -20 10 40 70 100
10 - ' LOAD CURRENT, - mA TA -TEMPERATURE - DEGREES C
ON VOLTAGE VS. LoAD CURRENT THRESHOLD CURRENTS VS. TEMPERATURE
276
H 11 L 1, H 11 L2, H11 L3'
100
, .,. 10
50
/
1/
-'
~
./
, ./
8
« / /. /
E «
I
20 / V / E
I
I-
..,
Z
II::
II:: 10
TA-I00-y' 25-y' -55"( I-
..,z
II::
II::
6
::> ::>
<> <>
0
II::
« 5 I I ~
ill I I IL
...~
IL
I J II ::>
II)
..!:' 2 / / H
I
•
..A. I
V / /
v .9 1.0 1.1 1.2 1.3 1.4 1.5 4 6 8 1012 14 16
VF - FORWARD VOLTAGE - VOLTS V.s - SUPPLY VOLTAGE -VOLTS
FORWARD VOLTAGE VS. FORWARD CURRENT SUPPLY CURRENT VS. SUPPLY VOLTAGE
HIILI HIILI IMHz NRZ-OHI 011101- DATA STREAM
V=2V/OIV V=2VDIV
H=5mS/OIV H= tP.S/DIV
RL =270A RL"270A
RE=120OA RE =1.2KA
coo C=27\)Pf
TYPICAL APPLICATION
+5VDC
In
~500~_+
- 1 HtlL1 6
I r - - - - - - ----I
~200~----~~~ I 1
; I "1'\ 14
Rp I /l./ \.L 1----',---0
IIOO~~RI~§liI
lEo soE II____________ J1 OUTPUT
D:
I
. rpROGIRAM
2 5
20 l--1'HRE,SHCJLD
10L-----~--~~~5~-L~~~~--~~~~~~~~~
I IN - THRESHOlD CURRENT ..... mA

PROGRAMMABLE CURRENT
THRESHOLD SENSING CIRCUIT
PLEASE NOTE: THE INFORMATION INCLUDED IN THIS SPECIFICATION HAS BEEN CAREFULLY CHECKED AND IS BELIEVED TO'
BE RELIABLE, HOWEVER, NO RESPONSiBILITY IS ASSUMED' FOR INACCURACIES.
277
SOUDSTATE
@ (0 ELECTRONICS
1mm Aperture
Photon Coupled Interrupter Module H21A1,H21A2,H21A3
The General Electric H21A Interrupter Module is a gallium
arsenide infrared emitting diode coupled to a silicon photo-
transistor in a plastic housing. The packaging system is de- t=u~
--. ..... -70rm
-
III'LUMETE'"
NOTIII
Hi "'''tt
•• .... .... .- ....... -.-
I~U.~:~
~,
signed to optimize the mechanical resolution, coupling . +"'1 Jo-o +..
L~~-;r
A• "0 ... ,II' .Its
•a
....• ......... ......... ... ...
. .l'IO
efficiency, ambient light. rejection, cost, and reliability. The <±) E + .50_
"0
.... .
....... ... ......,.... -

gap in the housing provides a means of interrupting the s i g n a l · • ·0, 11.1 ,a.o "71
with an opaque material, switching the output from an "ON" ~T

.111 .12'
., .171
. ,110
into an "OFF" state. A .. • "1& us ., .
L
L-~· •• ... ....

, .... .....
....- •135
absolute maximum ratings: (25°C) 'T- .. 0

•", 1.3 NOM.
.00,-
x~ .........
rQ.4
1.1 NOM.
•
".s 1.1 NOM.
TOTAL DEVICE i-.,-l .....
" ...1t I -~ . .
I.}.
!.4S 1.1S .1. .141
•
~;~:~!~ :~~~:~
T I.. .' .1 NOM.
Storage Temperature
Operating Temperature
Lead Soldering Temperature
(5 seconds maxim~)
260°C l ;~l I
L J L_
~------------------------------------~ 2 5
INFRARED EMITTING DIODE PHOTOTRANSISTOR
Power Dissipation PE *100 mW Power DiSSipation Pn **150 mW

Forward Current IF 60 mA Collector Current Ie 100 mA
(Continuous) (Continuo~s)
Forward Current (peak) IF 3 A Collector-Emitter VeEo 30 V
(Pulse Width ..-;; IllS Voltage
PRR"-;;300pps) Emitter-Collector VECO 6 V
Reverse Voltage VR 6 V Voltage
*Derate 1.33 mWrC above 25°C ambient. **Derate 2.0 mwrc above 25°C ambient.
individual electrical characteristics:(25°C) (See Note 1)

EMITTER MIN. TYP. MAX. UNITS DETECTOR MIN. TYP. MAX. UNITS
Reverse Breakdown Voltage 6 - - V Breakdown Voltage 30 - - V

V(BR)R IR = 1O~ V(BR)CEO Ie = 1 rnA
Forward Voltage - - 1.7 V Breakdown Voltage 6 - - V
V F I F =60mA V(BR)ECO IE = l00~
Reverse Current - - 100 nA Collector Dark Current - - 100 nA
IR VR =5V IeEO VCE =25V
Capacitance
Cj V=O, f= 1 MHz
- 30 - pF Capacitance
Cce VcE =5V,f=lMHz
- 3.3 5 pF
coupled electrical characteristics:(25°C) (See Note 1)

H21A1 H21A2 H21A3
UNITS
MIN. TYP. MAX. MIN, TYP. MAX. MIN. TYP. MAX.
IeE(on) IF = SmA, VCE =5V 0.15 - - 0.30 - - 0.60 - - mA
ICE(on) IF = 2OmA, VCE =5V 1.0 - - 2.0 - - 4.0 - - mA
IcE(on) IF = 3OmA, VCE =5V 1.9 - - 3.0 - - 5.5 - - rnA
VCE(sat) IF = 20rnA, Ie = ·1.8mA - - - - - ·0.40 - - 0.40 V
VCE(sat) IF = 3OmA, Ie = 1.8mA - -. 0.40 - - - - - - V
ton Vec = 5V, IF =30rnA, RL =2.5KG - 8 - - 8 - - 8 - p.s
toft' VCC= 5V, IF = 3OmA, RL =2.5KG - 50 - - 50 - - 50 - p.s
No~e 1: Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
278
IH21A1, H21A2. H21A31
-
10 10
8 8 ~' NORMALIZED TO VCE·=5V. IF '20 mA,TA=25°C
--- ----
I-
S
4 .......- I-
S I - - - INPUT PULSED
1
I--
IF= 100 mA I - -
...
Z
II::
./
V Z
~ 4
IF=SOmA"-
II:: 2 II::
:::>
u
I-
:::> I / :::>
u
I- 2
T-
--
n. .8 :::>
I- ./ n. IF =30 mA
:::> .S NORMALIZED TO' I-
~
o .4
V IF = 20mA ao iF~ I---
...
o
/ VCE =5V
PULSED ... .8
I
:J .2 PW= 1001's
N
/ ::i
---
<[ .6
:IE
II:: I L
PRR= 100pps <[
:IE
II::
IF=IOmA -
~ .08 o .4
).... .OS /
~ r--+--
- -Ft-
/
~ .04 " I I
;:
.02
/ -
oS
...
<>
.2
""."
~
V
I I
.0 I 2 4 S 8 10 20 40 60 80100 200 400 600 /000 -55 -40 -20 0 20 40 60 80 100
IF"INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-OC
DETECTOR EMITTER
103
/ 103
NORMALIZED TO'
2 = ~. T =25°C
!£. I-
IF 30 mA A ...
Z V/
...
~
0 II::
PULSED
.~'" *~~ r -
2
N PW= 100JLs.PRR=100 pps ~ 10
:::; u
<[ ';"'v ::..v'"
:IE
II:: "
II::
VI
0 ~ ./
Z
I
:;J 10 I / / I /
-;
iii
. N
::i
<[
/
>
<>
.8
:e
II:: / 1/ ./
~ 1/ 1/
...
b
NORMALIZED TO' I-- NORMALIZED TO' -
.:t / VeE =25V I-- VR =5V -
.S
TA~250~ ~ r-
-\
T -2SoC
I
I I
-50 -25 o 25 50 75 100 +25 +50 +75 +100 +25 +50 +75 +100
TA -AM8IENT TEMPERATURE-OC TA-AMBIENT TEMPERATURE-oC TA-AMBIENT TEMPERATURE-OC
3. Vce(sat) VS. TEMPERATURE 4. LEAKAGE CURRENTS VS. TEMPERATURE
d-DISTANCE-mils
787 1575 2362 315 3937
4.5
4
I /
1.00
, /
UI
:e
i5 3
Vcc = 5V,
IF.~ A
/V I-
...
Z
I
~
RL
tON t~ V
,/ II::
II::
a I I I
N PW =300JLS NORMALIZED
~ PRR=IOOpps /./ I- TO VALUE WITH
~:::>
2 SHIELD
...
0
!::!
...J 1.5
NORMALIZED TO
RL =2:5K.o.
~ /" o f- l BLACK
SHIELD
REMOVED
:;J
~loIIEIY'1~lo :g
.0
V
<[
:IE N I
II:: :::;
~ BLACK
0
Z
...... I / <[
:IE
SHIELD
~ .9 ./
~" ~:
0
z
.8
./ '" RL - .001
E]zG:=
o
<[ .7 ;;;
z ./ -<>
~ .S
.5 /'
145 .000I0
IK 2K 3K 4K 5K SK 7K 8K 9K 10K 2 4 6 8 10
RL-LOAD RESISTANCE-OHMS d-DISTANCE-mm
5. SWITCHING SPEED VS. RL 6. OUTPUT CURRENT VS. DISTANCE
279
I
SOUDSDtTE .
@ D co ELECTRONICS
1mm Aperture
Photon Coupled Interrupter Module H21A4,H21A5,H21A6
transistor in a plastic housing. The packaging system is de- SYMBOL M~~~ME~~ ...:::HESMAX, NOTES
signed to optimize the mechanical resolution, coupling A

AI
AZ
I'~':
10
&0
J. 11.0
3.2
3.2
A22~
.119
.119·
l. .'33
.12&
.125
efficiency, ambient light rejection, cost, and reliability. The .b
it,
.600
.50 NOM.
.-,,0.024
.020 NOM.
D30
gap in the housing provides a means of interrupting the signal o 24.3 24.7 .9&7 .972 NOTES'
D, 11.6 12.0 .461 .472
..
I. INCH DIMENSIONS ARE
", ! ~
E
with an opaque material, switching the output from an "ON" T
D2
_I
5.0
6.9
3.3
7,S
.119
.272
.129
.295
DERIVED FROM MILLIMETERS.
into an "OFF" state. -2 2.3 z.e .091 .110

E' 6.15 ~ .243 .2""
Q
A R.
T •
absolute maximum ratings: (25°C) SEATING L.
Q
L
I/Jp
8.00
12
18.9
3.4
19.2
.315
.126
.745
.133
.7e5 =
5. THE SENSING AREA IS DEFlNED
~1~~fJS~&~:,:&
PLANE R,.!..! R 1.3 NOM. .051 NOM. 1!:.030 INCHr.
.
TOTAL DEVICE . x~ R
H,
Re
1.3 NOM.
1.3 NOM.
.051
.051
NOM.
NOM.
S .8511.0 .OMJ .03.
Storage Temperature
-SSOC to +lOO°C
-SSoC to +IOO°C
I ~jo-"-
r" ~ , 4 ......1-
5,
T
3.45
2.6
3.75
M.
1,136 .147
.to NOM.
Lead Soldering Temperature 260°C I hi I

(S seconds m~mum) I 1"'1 I
'- ,.J L.._ .J
~ ,
INfRARED EMITTING DIODE PHOTOTRANSISTOR
Power Oissipation PE *100 mW Power Dissipation PD **lS0 mW
Forward Current IF 60 rnA Collector Current Ic 100 rnA
(Continuous) (Continuous)
Forward Current (peak) IF 3 A Collector-Emitter VCEO SS V
(Pulse Width ~ l#lS Voltage
PRR ~ 300 pps) Emitter-Collector 6 V
*Derate 1.33 mWrC above 25°C ambient. **Derate 2.0 mWrC above 25°C ambient.
individual electrical characteristics:(25°C)(SeeNote 1)

EMITTER : MIN. TYP. MAX. UNITS DETECTOR MIN. TYP. MAX. UNIT-6
Reverse Breakdown Voltage 6 - - V Breakdown Voltage SS - - V
V(BR)R IR = 10#lA V(BR)CEO Ic = 1 rnA
VF IF = 60 rnA V(BR)ECO IE = 100#lA
IR VR = 5V IcEo VCE =4SV
Capacitance - 30 - pF Capacitance - 3.3 S pF
Ci V =0, f 1MHz= Cce VcE=SV,f=lMHz
coupled electrical characteristics:(25 °C) '(See Note 1)

H21A4 H21A5 H21A6
UNITS
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
ICE(on) IF = SmA, VCE = SV 0.15 - - 0.30 - - 0.60 - - rnA
ICE(on) IF = 2OmA, VCE = SV 1.0 - - 2.0 - - A.O - - rnA
IcE(on) IF = 3OmA, VCE = SV 1.9 - - 3.0 - - 5.S -:- - rnA
VCE(sat) IF = 2OmA,Ic = I.8mA - - - - - 0.40 - - 0.40 V
VCE(sat) IF = 3OmA, Ic = 1.8mA - - 0.40 - - - - - - V
ton VCC = SV, IF = 30inA, RL = 2.SKn - 8' - - 8 - - 8 - #ls
toff VCC= SV, IF = 3OmA, R L = 2.5.K!2 - 50 -. - SO - - SO - #ls
~tmy ",,,'."'n "'" "'" "'nM of _ Adeq..,. _ ..."'" .. pro""".
/ 2~
IH21A4. H21A5. H21,l~61
10 10
8
6 .- 8 1=== NORMALIZED TO VCE·=5V. IF =20 mA.TA =25°C I
--- -
I- .-/ 6 I - - - INPUT PULSED IF = 100 mA I - -
4 I- I--
Z
....ct: V Z
....ct: 4
ct: 2
1/ ct:
IF =60 mA
V
:J :J
~
U
I-
I
U
I- 2
1-
~ .8 ./
:J
(L IF =30 mA
5 .. 6 NORMALIZED TO' I-
~
o V IF = 20mA 5 ~I - - -
o
....
:i«
.4
.2
V VCE =5V
PULSED
PW= 100fts
N
o
.... .8
I
----
::E
V PRR= 100pps ~
::E
.6
IF =IOmA r--
ct: I ct:
~
)..
.08
.06 t
.4
.- -r---f.-..-
! .04
V c:
o I I
;: / ;;; .2 r--
.02
.0 I I
V
2 4 6 8 10 20 40 60 80 100
IF-INPUT CURRENT-mA
200 400 600 1000
~
.1
........
-55 -40
I---
-20 0 20
r---
40 60
1Ft- 80 100
DETECTOR EMITTER
3r-----r-----r-----r-----r-----r-----r---~
103
/
NORMALIZED TO'
I- / /
2 ~ ~ 1.8 mA, T =250C Z
.... ~/ /'
....0N
:::i
IF
PULSED
30 mA A
PW= 100fLs.PRR=100 pps

ct:
~
u 10 2 .~L ==
~~R.~-:::: -
~
«
::E
"
It:
~ 1/ I/~v~
ct:
0 o ......-
Z .... I / J I V
~
I
.....a «
10
./
;;;
0
> .8
30mA I...
'0 /
/ /
/ 17
..........
1-__-""-1=_"""""'''+------+------1----~ = 0.9 mA -1--_--1

IF 15mA
_0
NORMALIZED T~ - NORMALIZED TO' r--
/ VCE =45V - VR =5V
.6 / TA=25°C TA =25OC
I I
-50 -25 o 25 50 75 100 +25 +50 +75 +100 +25 +50 +75 +100
TA -AMBIENT TEMPERATURE-OC TA-AMBIENT TEMPERATURE-oc TA-AMBIENT TEMPERATURE-OC
3. VeE,(sat) VS. TEMPERATURE 4. LEAKAGE CURRENTS VS. TEMPERATURE
d-DISTANCE -mils
787 1575 2362 315 3937
4.5 .) 1.00
4
I
"7 /
<II
::E
Vcc = 5V. V I-
Z
....ct: I
is 3 IF" ~ A
V
'"
II)
RL
t
ON to,... V
ct:
:J I
I I
N PW= 3OOfLs U NORMALIZED
0
t- 2 PRR=loopps /./ I-
~
"7 TO VALUE WITH
l 7 ~~~~eED
~V
O NORMALIZED TO
....
N
Rl= 2.SKA 5o I- BLACK
SHIELD
:::i 1.5
e .0
1~[o"E~~lo :g
«
2
ct:
0
Z
./
V N
:::i
« ~ BLACK
SHIELD
...... I
::E
~
0
.9
.8
I-'
./
RL - ~C .00I ~:
z ./ ~
g~G:= ...
« .7
z ..... 1-' _0
~ .6
.5 /' 'r
A5 I-' I
.0000
IK 2K 3K 4K 5K 6K 7K 8K 9K 10K 2 4 6 8 10
5. SWITCHING SPEED VS. RL 6. OUTPUT CURRENT VS. SHIELD DISTANCE
281
SOLID STATE
@ ©ELECTRONICS
1 mm Aperture
Photon Coupled Interrupter Module H2181,H2182,H21B3
The General Electric H21B Interrupter Module .is a gallium
arsenide infrar.ed emitting diode coupled to a silicon ·darlington
connected phototransistor in a plastic housing. The packaging ; SYMBOl. MILL!METERS INCHES
,ul'»
NOTES
MIN. MAX. MIN. MAX.
system is designed to optimize' the mechanical resolution,
coupling efficiency ,ambient light rejection, cost, and reli, i, +.
:,
A.
,~
5.0
3..0
.600
J"'o 3.2
3.2
.7&>
.Jl9
.119
.024
.125
.125
1l3O 2
.020_.
i 0" ..
.50 NOM. 2
ability. The gap in the housing provides a means of interrupt-. 24.3 24.7 ."1 .912 NOTES'
D, 11.6 '2.0 .4S1 .412 I. INCH DiMENSIONS ARE
ing the signal with an opaque material, switching the output D,
" ...
lUI
1~
.119
.212 ....
.129
2.
DERIVED FROM MILLIMETERS.
from an "ON" into an "OFF" state.

I "
E
L
&,.
2.'
B.DO
2.8
i....
.09'
.243
.315
....
.110
T •
absolute maximum ratings: (25°C) •••

.•• .8511.0
I .126 .133 3. THE SENSING AREA IS DEFINED
3.' 3.'
0 '8.9 ,9.2 .745 .1" ~ ~:~~Ift~rl'r::.
TOTAL DEVICE , 1.3 NOM.
1.3 NOM•
.051 NOM.
.051 NOM,
(.t:.030 INCH).
1.3 NOM. ',051 NOM.
_55°C to +100°C
S .0541
1,136 .039
Storage Temperature S,
T
3.45
2.6
3.75
M.
.147
.103 NOM. ,
Operating Temperature _55°C to +100°C
Lead Soldering Temperature 260°C
(5 seconds maximum)
INFRARED EMITTING DIODE DARLINGTON CONNECTED PHOTOTRANSISTOR

Power Dissipation *100 mW Power Dissipation Po **150 mW
Forward Current 60 rnA Collector Current Ic 100 rnA
Forward Current (peak) 3 A Collector-Emitter VCEO 30 V
(Pulse Width .;;;; 1 J.l$ Voltage
PRR .;;;; 300 pps) Emitter-Collector VECO 7 V
*Derate 1.33 mWiC above 25°C ambient. **Derate 2.0 mWrC above 25°C ambient.
individual electrical characteristics:(25°C) (See Note 1)

EMITTER MIN. TYP. MAX. UNITS [)J:TECTOR MIN. TYP. MAX. UNITS
V(BR)R lR = lOpA V(BR)CEO Ic = 1 rnA
V F IF =60mA V(BR)ECO IE = 100pA
IR, VR =SV ICEO VCE =2SV
Capacitance - 30 - pF Capacitance - 5 8 pF
Cj V = 0, f= 1 MHz Cce VCE = SV, f= 1MHz
coupled electrical characteristics: (25°C) (See Note 1)

H21B1 H21B2 H21B3 . UNITS
-
ICE(on) IF = 2mA, VCE = 1.SV 0.5 - - 1.0 - - 2.0 - - rnA
IcE(on) IF = SmA, VCE = I.SV 2.5 - - 5.0 - - 10 - - rnA
ICE(on) IF = lOrnA, VCE = 1.SV 7.5 - - 14 - - 25 - - rnA
VCE(sat) IF = lOrnA, Ie = 1.8rnA - - 1.0 - - 1.0 - - 1.0 V
VCE(sat) IF = 6OrnA, Ic = SOrnA - - - - - 1.5 - - 1.5 V
ton VCC = SV, IF = lOrnA, RL = 7S0n - 45 - - 45 - - 45 - IJ.S
VCC= SV, IF = 6OrnA, RL = 7Sn - - - - 7 - - 7 - IJ.s
toff VCC= SV, IF = lOrnA, RL = 7S0n - 250 - - 250 - - 250 - IJ.S
VCC =. SV, IF = 60mA, RL = 7Sn - - - - 45 - - 45 - IJ.s
Note 1: Stray irradiation can alter values of characteristics. Ade<iuate shielding should be provided.
282
I H21B1. H21B2. H21B31
100 100
28
40
NORMALIZED TO
I- VCE= 1.5V, IF " 5mA, TA=25°C
z 20
-I- INPUT PULSED
ILl
a:: . . . 1-- I--"
a:
:::> 10
-
IF "100 mA
-
-
(.) 8
I- 6 / 10
:::> 4 IF"60 n:A
11.
~
I-
:::>
0
2
/ NORMALIZED TO ' I F "30 mA .--1-
c I IF =5 mA
ILl .8 IF "2clnlA
N .6
:::; VCE =1.5V
/
....+-
-
.4
'"::Ea:
0 .2
V PULSED
PW=I00l's I IF"IOmA - ..
:or
coS .I
/ PRR =100 pps
I F "5 mA
:8~
~"' .04 /
I
.02 I F"2;--
2 4 6 8 10 20 40 6080100 200 400 600 1000

O. I -50 -25 0 +25 +50 +75 +100
I,,-INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-OC
1. OUTPUT CURRENT VS.INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE
DETECTOR EMITTER
NORMALIZED TO' /
2
f- f- .!Q. = 50 mA
I ~= ~,TA=25°C
IF 10mA
PULSED
I-
Z
104
f::=
I--
I--
NORMALIZED TO:
VCE=25V
TA = 25°C
/
-]
~ I-
Z
ILl
104
ILl
IF 60m\.
PW= 100 I's,PRR=IOO pps a:
a: 103 ~
:::>
103
r-,.... :::>
?tf
C (.)
(.)
ILl ILl
N + +
:::; '"
a:
~v'v~v"
I!)
'"~ 102
'"::E '"
c 10 2
c ILl I NORMALIZED TO: 1==
~ ..J f---
~
ILl VR =5V
I 0.8
IC 3imA / !::! / 1/ C
ILl f--- TA = 25°C
IF = 20 mA I - - - IC 1.8mA .!£. =0.9'A ..J
1/
~<II I---fF = IOmA N .,/
e IF 5mA '"a:
:E 10 :::; 10
::>
0.6 0
zI / '"a:o
:E
./
0
ILl III I z 17
1
(.)
1-1
a:
0.4 1-1
0.1 I
-50 -25 o 25 50 75 100 25. 50 75 100 0'25 50 75 100
TC-AMBIENT TEMPERATURE-OC TA-AMBIENT TEMr>ERATURE-oC TA-AMBIENT TEMPERATURE-oC
3. VeE Cut) VS. TEMPERATURE 4. L':AKAGE CURRENTS VS. TEMPERATURE
d-DISTANCE-mils
4 787 1575 2362 315 3937
I I I 1.00
IF RL I /
I-
J~G: /
~
Z
2 ILl
C
II::
a:
:::> I
I l
ILl u NORMALIZED
~
N PW= 300 1'8
:::; I- 1 TO VALUE wiTH
I I - - - - PRR =100 pps '~ SHIELD
'"
::E
~ .B I - - - - I F= 7.5 AMPS,Vcc' 5 V
RL f?" I-
1 REMOVED
z v/ 5 BLACK
SHIELD
... .6 I - - - - NORMALIZED TO- - fil .0
1~loIIEI~~lo
~/ V -d
-~ RL °7S0n N
:; -0
~ BLACK
il .4
'"~::E SHIELD
[/0:
~
'" ~do •
-~ ~
c .00I.
.2 .2
,VV ~ "'
~V"
O. I
10 20 40 60 eo 100 200 400 600 BOO 1000 1500 .000 I0 2 4 6 8 10
750
283
~IU ti IAI t:.
@ D ©ELECTRONICS
MILUMETERS INCHES
" .50_
SYIIIIDL NOTES
MIN. MAX. MIN. OIA"
~,
A•
••"
D
D,
3.0
3.0
.600
243
J'~'~
3.2
3.2
24..
......... ...
11.1 ".0
"~r33
.119
.119
...
.750 .OM
.....
.
.457
-...
.125
.125
"'"
.9"
.472
.
••
NOTES'
..
.-
D, ~3 .119 .129 DERIVED FROM MILLIMETERS.
U .•12 .
.,"
E 6.1' .... .09'
.243
.110
.
L 8.OD .'15
•••
0
U
.a.B 19.2
I.' NOM .
U .126
.'45
.135
.755
.0$1 NOM.
, 1.3 NOM. .051 NOlI.
Storage Temperature _55°C to +100°C

•r
S
5,
T
.85
3.45
2.6
1,.0 ,,136J
1.3 NOM.
3.15
M.
.051 NOM.
.034
.10 NOM.
..()39
./47
3
'~~.
Operating Temperature _55°C to +100°C r- , ,--- ,
I I I I
(5 seconds maximum)
: I~!
I
i I I I
2 "'- _J L____.. 3

Power Dissipation *100 mW Power Dissipation PD **150 mW
Forward Current 60 rnA Collector Current Ic 100 rnA
Forward Current (peak) 3 A Collector-Emitter VCEO 55 V
(Pulse Width ~ 1(J$ Voltage
PRR ~ 300 pps) Emitter-Collector VECO 7 V
*Derate 1.33 mWrC above 25°C anibient. **Derate 2.0 mWrCabove 25°C ambient.
individual electrical characteristics:(25 °C)(See Note n

EMITTER MIN. TVP. MAX. UNITS DETECTOR MIN. TVP. MAX.' UNITS
Reverse Breakdown Voltage 6 - - V Breakdown Voltage 55 - ~

V
V(BR)R IR = 1O#lA, V(BR)CEO Ic = 1 rnA
. Forward Voltage - - 1.7 V Breakdown Voltage .7 - - V
VF IF =60mA V(BR)ECO IE = 100#lA,
IR VR =5V IcEo VCE =45V
Ci V=O,f= 1MHz Cce VCE = 5V, f= 1MHz

H21B4 H21B5 H21B6
UNITS
II/liN. TVP. MAX. MIN. TVP. MAX. MIN. TVP. MAX.
ICE(on) IF = 2mA, VCE = 1.5V 0.5 - - 1.0 - - 2.0 - - rnA

IcE(on) JF = SmA, VCE = 1.5V 2.5 - - 5.0 - - 10 - - rnA
ICE(on) IF = lOrnA, VCE = 1.5V 7.5 - - 14 - - 25 - - rnA
VCE(sat) IF = lOrnA, Ic = 1.8mA - - 1.0 - - 1.0 - - 1.0 V
VCE(sat) IF = 6OrnA, Ic = 50rnA - - - - - 1.5 - - 1.5 V
ton VCC = 5V, IF = lOrnA, RL = 75011 - 45 - - 45 - - 45 - JJ.s
VCC= 5V, IF = 6OrnA, RL = 7511 - - - - 7 - - 7 - JJ.s
toff VCC = 5V, IF = lOrnA, RL = 75011 - 250 - - 250 - - 250 .- JJ.S
VCC= 5V, IF =6OrnA, RL = 7511 - - - - 45 - - 45 - JJ.s
Note 1: Stray irradiation can alter values of characteristics. Adequate $hielding should be provided.
284
'H2184. H2185. H2186 I
100 100
28
40
NORMALIZED TO
~ ~ "cE"1.5V, IF c 5!IIA, TA"25"<:
...z
II:
20
..... -'"'" ...
z
II:
INPUT PULSED
,.~ II:
II:
;:)
'g6 ;:) IF "100 mA
-r
----
u U
~ ./ ~
10
;:)
Il.
4 ;:)
Il. IF"60 '"rio
~
;:)
0
...
Q
2
I
.8
/ " NORMALIZED TO •
IF -5mA-'
~
;:)
0
...
Q
IF"30 mA
IF"~A
N N
.6 VCE ",·5V
::::i ,/ ::::i
« «
_IF"IO~
.4
I0 / PULSED 2
z."i:
.2
.I /
PW-'OO,.I
PRR'IOO Ppi
II:
0
Z
."i: IF"5mA
.!! :81 ,/ .!!
OJ
...
u .04 OJ
...Co> I
.02 I F"2;--
0.1 -50
2 4 6 8 10 20 40 6080100 200 400 600 1000 -25 0 +25 +50 +75 +100
I..-'NPUT CURRENT-mA TA-AMBIENT TEMPERATURE-oC
DETECTOR EMITTER
NORMALIZED TO' I I
I ~= ~,TA=25·C
IF 10 mA
~ NORMALIZED TO.
~
~ 104
z
2
r-r- IC
IF
= 50mA
60m\
PULSED
PW"IOO ,.s,PRR=IOO pps
f--
t--
VCE"45V
TA "25°C
/
/ / i 103
u
r-f-- r==
~~ ~¥
Q
N
ILl
I·to' .~ f--
::::i
« ~;-r-~~ «
~r02
... == NORMALIZED TO' ;:::::::
I
S Q
-
........- ~
!!;. = 3./mA VR"5V
!... 0.8 / j N --'- TA' 25°C
..: IF 20 mA - I C 1.8tA .!£ =09-::A V / ::i
:iI -if"lomA IF 5mA « 10
i 0.6
/ / i /""
,V V I
II:
tot
1/
0.4
/
IL
-50 -25 o 25 50 75 100 0125 50 75 100 O.I25 50 75 100
TC-AMBIENT TEMPERATURE··C TA-AMBIENT TEMPERATuRE-oC TA-AMBIENT TEMPERATURE-OC
3. VeE (sat) VS. TEMPERATURE 4. LEAKAGE CURRENTS VS. TEMPERATURE
d-DISTANCE -mils
4 787 1575 2362 315 3937
I - I I 1.00
IF RL F ,/
I
J~G:
~
2
I
I I
NORMALIZED
I -
PW= 300 P.s
PRR *100 pps ~ TO VALUE WITH
SHIELD
.8 - I
F=
7.5
RL -5
AMPS,Vce" v
V/
f?' 1 BLACK
SHIELD
REMOVED
- NORMALIZED TD.' - I
7/
.6
RL -750,Q V :lO]EfW Lo :~
.4 ~ BLACK
SHIELD
.2 ~ /, I
~d0 •
~ V
~v
O. I 10 20 40 60 80100 200 400 600 800 1000 1500 .000I0
2 4 6 8 10
75 750
285
SOLID STATE
@ © ELECTRONICS
1mm Aperture SYMBOL
MILLIMETERS INCHES
NOTES
Photon Coupled Interrupter
\
Module H21 Lt,H21L2.. . A
MIN.
,0.7 11.0
MAX. MIN.
.422
MAX.
.433
3.0 3.2
The General Electric H21L series is a gallium arsenide, infrared A,
A2 3.0 3.2
.1'9
.119
.125
.125
emitting diode coupled to a high speed integrated circuit detector. <3 ¢b
~,
.600 .750
.50 NOM.
.024 .030
.020 NOM.
2
2
The output incorporates a Schmitt Trigger which provides~ ~ 0 24.3 24.7 .957 .972
hysteresis for noise immunity and pulse shaping. The gap in the t§8 ~ t.1 fteJ 0, 11.6 12.0 .457 .472
- -
.,
D2 3.0
6.9 7.5
.119
.272 .295
an opaque materta . h'109 t h e output f rom an "ON" lOto

. 1,SWltC . an 0 -l~1- . ANODE
+ D + ¢P = ~ .GROUNO
4
"2
"3
E
2.3
1.14
6.15
2.8
1.40
6.35
.091
.045
.243
.110
.055
.249
II
"OFF" , - - I
~tate.. . l - - o L . . - \ CAT~ODE
+
tVo L
¢P
8.00
3.2 3.4
.315
.126 .,33
absolute maximum ratmgs: (2S0C) A

1.
s,__ tt
1 A
~I-
R2
I..brl
~t:
a
R
R,
18.9 '9.2
,.83 NOM.
1.3 NOM.
.745 .755
.072 NOM.
.051 NOM.
1.3 NOM .051 NOM.
TOTAL DEVice SEATINGl. ~1' R2
S .85 I1.0 .034 I'.039
I
A,X Ll PLANE
R
R, SECTION X·X
LEADPRDFILE
5,
T
3.94 NOM.
2.6 NOM.
.,55 NOM.
.103 NOM. 3
Storage Temperature TSTG -55°C to +85°C 0-:;::1, 1.--0 3 "3-l1t-_ NOTES.
Operating Temperature TJ _550C to +85°C I --I 1-_< ,. INCH DIMENSIONS ARE DERIVED FROM MILLIMETERS.
2. FOUR LEADS. LEAD CROSS SECTION IS CONTROLLED
Lead Soldering Temperature T L 260° C ~~~~~E;~/~:EML~~~i' FROM SEATING PLANE AND
(5 seconds maximum) 3. THE SENSING AREA IS DEFINED BY THE "5" DIMENSION

AND BY DIMENSION "T"±O.7S MM (:t.030 inch!.
INFRARED EMITTING DIODE PHOTO DETECTOR
Power Dissipation PE ·100 mW Power Dissipation ""150 mW

. Forward Current IF 60 mA Output Current 50 rnA
(Continuous) Allowed Range o to 16 V
Forward Current (Peak) IF 3 A Allowed Range o to 16 V
(Pulse width ~ 1 /-LS "'Derate 2.0 mW j"e above 25°e ambient.
PRR ~ 300 pps)
"Derate 1.33 mW/"e above 25°e ambient.
individual electrical characteristics: (0-70° C) (See Note 1)

Forward Voltage VF - 1.10 1.60 volts Operating Voltage Range Ve 4 - 15 volts

(IF = 20 mA) Supply Current - 1.0 5.0 milli-
13 (off)
Reverse Current IR - - 10 micro- (IF = 0, Vee = 5V) ampere
(VR = 3V) ampere Output Current, High IOH - - 100 micro-
Capacitance CJ - - 100 pico- (IF = 0, Vee = Va = 15V) ampere
(V = 0, f = 1 MHz) farads
coupled electrical characteristics (0-70° C) (See Note 1)

Supply Current I3(on) - 1.6 5.0 milliampere

(IF = 20mA, Vee =5V)
(RL = 2700 Vee = 5V, IF = 20 mA)
Turn-On Threshold Current IF(on) H2111 - 20 30 milliampere
(RL = 2700, Vee = 5V) H21L2 - 10 15.0 milliampere
Turn-Off Threshold Current IF(off) H2111 0.5 15 - milliampere
(RL = 2700, Vee =5V) IF(on) H21L2 0.5 8 - milliampere
Hysteresis Ratio IF(off)/IF(on) 0.50 0.75 0.90 -
(RL = 2700, Vee = 5V)
Switching Speeds: (RL = 2700, Vee = 5V, TA = 25°C, IF = 20 mA)
Rise Time tr - 0.1 - /-Lsec.
Fall Time tf - 0.1 - Il-sec.
Note 1: Stray irradiation can alter values of charaaeristics. Adequate shielding should be provided.
286
I H21L1,H21L21
6 1.6
...z I I 1
.... I I I
5 VO" Q:
-
Q:
(I) ;;:) TURN ON THRESHOLD
~I
() 1.2
, o I
11/
4 oJ
~ .- 10- I I I
IF(om ~ON) ....
(I)
V TURN OFF THRESHOLD - f--
=
o!:l 3
>
Q:
~ 0.8
1/
/
~
I I 1
o
.... I 1
i N
:J I/'
/
NORMALIZED TO'
I
~ 2 VCC· 5V <l
TURN ON THRESHOLD
I RL=270{l ~ 0.4 AT
~ TA =25"C o Vcc=5V. TA=25°C
I z
I
VOL ....... I I I
1 I , -1
5 10 o 4 8 12 16
Ito -INPUT CURRENT-mA Vcc - SUPPLY VOLTAGE. VOLTS
1.0 1.8
(I) t
ii:
~ \.6
0
>
1
0.5
/
~
..~... \,4 7
~
..; 0.2 /
';' I
I- 1.2 /
z
V'
ell
~
:..I
0 0.1
V w
II:
II:
:;)
U
1.0
v
/
>
~
Q
-' 0.8
I"'"
./
... ~
;;:) 0
a.. :z:
~
;;:) .05 ./ ...
UI
II:
0.6
I
0 :z:
1
-'
./ I-
0.4
0 ioo"'" Vcc=5V Iii
> N NORMALIZED TO:
.02 TA=25°C ::i I Vcc'5V
c 0.2 1'.1
::IE TA"25°C
II:
0.01 0
z
I 2
Ii - LOAD
5 10
CURRENT. -
20
mA
50 100 -50 -20 10
TA -TEMPERATURE - DEGREES C
40 70 100
li
ON VOLTAGE VS. LOAD CURRENT THRESHOLD CURRENTS VS. TEMPERATURE
11
"
100 10
, ~
I-
I
ao 6 ~~llil;K
~ 8 I
50 ./
~ ~
~ " IX
IX f-- SHIELD , ~LACKI
c
e
./ ./ ./ f...--1o -d
-0 ~~~LD
/ / /' oJ
oJ:
I
'20
I-
Z
11/
10
TA.8~y 25"y -55"1 f3 4
IX
J:
"
a ~
ow NORMALIZED TO:
~ I
N Vcc;5VI
I 5 I I
I ::;
1\ I F;20mA
\ r \
~ 2
~, . I I II IX d;4mm I
oz PULSED 100Hz.
~ 2 I I !...
V r- W.; 10
I
., j
.9 1.0
/ 1.1
/ 1.2 1.3 1.4 1.5
Q
z
I.L
1
o 2 3 4 5 6 7 8 9
v, - FORWARO VOLTAGE - VOLTS
d-DISTANCE-mm
FORWARD VOLTAGE VS. FORWARD CURRENT THRESHOLD CURRENT VS. SHIELD DISTANCE
287
SOLID STATE
@ D co ELECTRONICS
1mm Aperture
Photon Coupled Interrupter Module H22A1, H22A2 ,H22A3
arsenide infrared emitting diode· coupled to a silicon photo-
transistor in a plastic housing. The packaging system is de-
signed to optimize the mechanical resolution, coupling
S'tMBOL' MIN.
I~.~
3.0
.600
J11.0.
MILUMETERS
MAX.
3.2"
'fICHES
MtN. MAX.
~~J.433
.119
.750.024
.125
D!O
NOTES
efficiency, ambient light rejection, cost, and reliability. The .50 NOM. .020 NOM.
gap in the housing provides a means of interrupting the signal 0, II.' ,u, .457 .472
with an opaque material, switching the output from an "ON" "

De
...'" ~.
1b
.119
.272
.129
.2"
3
into an "OFF" state. E

L
'1
.... ....
23
aoo
.~ .09'
.243
.315
.110
.24'
NOTES'
2.
DERIVED FROM MILLIMETERS .
absolute maximum ratings: (25°C) R

A,
I. S NOM.
1.1 NOM.
.051 NOM.
.o!I1 NOM.
T
3. THE SENSING AREA IS DEFaNEO
I] Q4 l'·O I. 1,039
TOTAL DEVICE
·R! 1.3 NOM. .051 NOM.
0 34
& ~~~~I!~~Sl:":~
S .85 (t..O!O INCH).
5, ).45 3.75 ~136 .147
T 2.6 M. .10 NOM.
Storage Temperature _55°C to +100°C
_55°C to +100°C
260°C
Ir'r7":'
hi I·
I 1""'1 . I
(5 seconds maximum) L .J L_ .J.
2 '5

Power Dissipation PE *100 mW Power Dissipation Pn **150 mW
Forward Current (peak) IF 3 A Collector-Emitter VCEO 30 V
(Pulse Width ,.;;; IIJ.S Voltage
PRR";;; 300 pps) Emitter-Collector VECO 6 V
individual electrical characteristics:(25°C) (Se~Note 1)

EMITTER MIN. TyP. MAX. UNITS DETECTOR MIN. TYP. MAX. UNITS
V(BR)R I R =lOllA V(BR) CEO Ic=lmA
V F IF .=60mA V(BR)ECO IE = 1001lA
IR VR =5V ICEO VCE =25V
Capacitance - 30 - pF Capacitance - 3.3 5 . pF
Ci V = 0, f= IMHz C ce VCE '" 5V, f'" IMHz

H22A1 H22A2 H22A3
UNITS
M,IN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
IcE(on) IF = SmA, VCE = 5V 0.15 - - 0.30 - - 0.60 - - rnA

ICE(on) IF '" 2OrnA, VCE = 5V 1.0 - - 2.0 - - 4.0 - - rnA
IcE(on) IF '" 3OrnA, VCE '" 5V 1.9 - - 3.0 - - 5.5 - - rnA
VCE(sat) IF '" 20mA, Ic '" 1.8mA - - - - - 0.40 - - 0.40 V
VCE(sat) IF = 3OrnA, Ic = 1.8mA - - 0.40 - - - - - - V
ton VCC '" 5V,I F =3OrnA,RL "'2.5Kn - 8 - - 8 - - 8 - p,s
toft' VCC= 5V,IF '" 3OrnA,
..
Ri, '" 2.5Kn - 50 - - 50 - - 50 - p,S
Nota I: Stray irradiation can alter values of characteristics. Adequate shielding sho~d be provided.
288
1~2A 1, H22A2, H22A31
...
10
8
6
.--' - 10
B 1====. NORMALIZED' TO VCE·=5V. IF -20 mA.TA=2SoC
6 1 - - , INPUT PULSED '
,
r-
---
4 IF=IOOmA r---
Z
III ~ 4
II:
II: 2 V IF -60 mA'
V
::;)
o
... I 2
I--'
r-
--
::;)
...
IL .8
.6 NORMALIZED TO-
I--
IF ·30 mA
~r-
::;)
0'
i/ IF=20mA
.4
o I
III V liCE = 5V
.B
:J« .2
V
PULSED
PW=IO~ .6
--
PRR=IO pps
~
II: I IF=IOmA r-
~ .OB .4
)... .06
V =-+--
!... .04
/ 1 '. r---
,......1oo-
r---t:+-
.2
:! .02 t--
V I
.0 I I 2 4 6 B 10 20 40 60 BO 100 200 400 600 1000 -55 -40 -20 0 20 40 60 BO 100
I..-INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-oC
DETECTOR EMITTER
3~----r-----~----~----T-----~----~--~
10:5
/ 10 :5
NORMALIZED TO-
2 !.£..
I.B mAo T =250C
'/
IF 30 mA A
~
o
III PULSED 2 tt' ~
N
:::; PW'I00/o'B.PRR=IOO PPs ,~ .~-::::::. ==
~c; ~
« 17 ~c;
~
II: ./
i I / / I V
-
./
/ / ./
1/ IlL
--
15mA NORMALIZED T{)- f-- NORMALIZED TO-
/ VCE '25V
.6r-----r-----+-----+-----+-----+-----~--~
f-- VR '5V
TA~2S0~ I I
f-- _TA =25°C
I I
I
-50 -25 o 25 50 75 100 +25 +50 +75 +100 +25 +50 +75 +100
TA -AMBIENT TEMPERATURE-OC TA-AMBIENT TEMPERATURE-oC TA-AMBIENT TEMPERATURE-OC
d-DISTANCE-mils'
787 1575 2362 315 3937
4.5 1.00
4
I /
/
/I)
::I
VCC·SV. )V /
i§ 3 IF=~ A
V
~~==t:==~l~~
RL
>0: tON to,..- V
~
N
~ 2
PW'300/o'S
PRR-IOOpps /./ 1t::::::====:j==1='
1==
1-_ _ _-1-_-1-_ _1-_ _ _+-__-1-
NORMALIZED
~~llt~UE WITH
~V
Q NORMALIZED TO REMOVED
LACK
~
III
N RL =2.SKA
:::; SHIELD
U5
«
::I
II: ~ .01 , 'E
+
+
D :g..,=t:===t====t==~=~f:~:=~
0
Z
...... I
./
/
.!> .9
-
g
Q .B RL
z ./
«
z
,7
.6
./ 11':;:::$ G+~
Vee"':'
.!>
.5 ./
AS .00010!-----:2~..L.---4~----!6:---L---!8-----,l10
IK 2K 3K 4K 5K 6K 7K BK 9K 10K
289
SOLID SIAl E .
@ D ©ELECTRONICS
.1mm Aperture
Photon Coupled Interrupter Module H22A4, H22A5 ,H22A6 ..--Ft:~
SYMBOL. MILUMETERS INCHES NOTES
transistor in a plastic housing. The packaging system is de- MIN. MAX. MIN. MA)('
signed to optimize the mechanical resolution, coupling

ff~I"~
+ ~"
A
AI 103.0.7J".O
1
3.2 ·":1...
.119 .125
3>
efficiency, ambient light rejection, cost, and reliability . The r +

E
s 0
SECTION X'Xl
+b
bl
.600
.50 NOM.
.750.024 .D!O
.020 NOM.
gap in the housing provides a means of interrupting the signhl LEAD PROFILE
it.& .457 .472
NOTES-
..
0, 12.0
....
1. INCH CMMENSIONS ARE
with an opaque material, Switching the output from an "ON" 0,
" ....
~O ~3
7~
.119
.•72
.129 DERIVED FROM MILLIMETERS.
into an "OFF" state. "E

L
23
6.,'
0.00
....
~. ,09'
.243
.315
.110
.249
TH •
3. THE SENSING AREA IS DEFINED
absolute maximum ratings: (25°C) R 1.3 NOM. .~I NOM.
BY THE ·s~ DIMENSION AND
By DtMENSION "T- 10.15 MM
(:.030 INCH].
R, 1.3 NOM. .051 NOM.
TOTAL DEVICE R2
S
1.3 NOM.
.851' 1.0
.051 NOM.
.OM!,D39
S, 3.4' ~.75 1.136 .147
Storage Temperature -SSOC to +100°C T 2.6 M. .10 NOM.
Operating Temperature -SSoC to +100°C

(S seconds maximum)
INFRARED EMITTING DIODE PHOTbTRANSISTOR

Power Dissipation PE *100 mW Power Dissipation Po **IS0 mW
Forward Current IF 60 mA Collector Current Ic 100 mA
(Continuous) . (Continuous)
Forward Current (peak) IF. 3 A Collector-Emitter VCEO SS V
(Pulse Width :E;; 11.J.S Voltage
PRR:E;; 300 pps) Emitter-Collector VECO 6 V
*Derate i.33 mWrC above 25°C aqtbient. **Derate 2.0 mWrC above 25°C ambient.
individual electrical characteristics:(25°C) (See Note 1) .

Reverse Breakdown Voltage 6 - - V Breakdown Voltage SS - - V
V(BR)R lR=lO,uA V(BR)CEO Ic=lmA
VF I F =60mA V(BR)ECO IE = loo,uA
IR VR =SV ICEO VCE = 4SV .
Capacitance - 30 - pF Capacitance - 3.3 S pF
Ci V=O,f= 1MHz Cce VCE = SV, f= 1MHz
coupled electrical characteristics:(25°e) (See Note 1)

H22A4 H22A5 H22A6
UNITS
M'N. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
ICE(on) IF = SmA, VCE = SV O.1S - - 0.30 - - 0.60 - - mA
ICE(on) IF = 2OrnA, VCE = SV 1.0 - - 2.0 - - 4.0 - - mA
IcE(on) IF = 3OmA, VCE = SV 1.9 - - 3.0 - - S.S - - mA
VCE(sat) IF = 2OrnA, Ie = 1.8mA - - - - - 0.40 - - ·0.40 V
VCE(sat) IF = 3OmA, Ic = 1.8mA - - 0.40 - - - - - - V
ton VCC = SV, IF = 30mA, RL = 2.5Kn - 8 - - 8 - - 8 - J.l.s
toff V9C = SV, IF = 30mA, RJ . == 2.SKn - SO - - SO - - SO - J.l.S
Note 1: Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
290
I H22A4. H22A5. H22A81
I-
...
Z
10
8
6
4
-
V ~
............ - I-
Z
I:!II::
10
8 ~'NORMALIZED TO VCE··5V,IF -20 mA,TA"25°C
6 I---- INPUT PULSED
4 .--
IF- 100 mA
It - -
t--
---- -
II:: IF-60mA"-
II:: 2
::l
U
I-
::l
0.. .8
I
V ::l
U
50.. 2
~
I
I- / IF -30 mA
.6 NORMALIZED TO' l-
I--""
iF~ r - -
::l
o .4 IF=20mA S
...
a
1/ VCE =5V
...
a
.S
I
:l .2 PULSED
PW=IO~
N
:::;
'"::E V PRR= 10 pps
'":Ii
.6
r--
II:: I IF=IOmA
~ .08
~C
.4
~ r---t-
--r---F+-
)... .06
i V
:!
.04
/
o
'iOI .2
! I r--
.02 ~ ........ 10-
V I
.0 I I 2 4 6 S 10 20 40 60 80 100 200 400 ~O 1000 -55 -40 -20 0 20 40 60 SO 100
~-INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-·C
1_ OUTPUT CURRENT VS. INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE
DETECTOR EMITTER
3r-----~----,_----_r----~----~~----r_--~
/ J03
IC I.S mA
NORMALIZED TO-
IF = 20 mA I- / /
2 = ~, T =25°C
.!.£ ---+~~~ ...
Z
~V V
...
a
N
:::;
IF
PULSED
30 mA A
PW= 100,..,PRR=100 pps

~=
IF
II::
~
u 102 .~k{
~
~~R.~~ 1==
~
"
'"::E ~
II::
II:: ~ 17 17~(,~
./
i ...
a
J I ...'"...lIO /
I
..... :l 10
I
til
I
"
iiJ '"
::E N L
~ .S
i----=:±:.....-9------+-----t----~ = ~ -1-----1
IF
30mA
15mA
~'0
_u
... /
/ /
/
/
NORMALIZED T~
VcE'45V
I IlL
zI
.!!'
f--
/'
NORMALIZED TO' i---

VR =5V
.6 f--
/ TA=25°C TA =25OC
I I
-50 -25 0 25 50 75 100 +25 +50 +75 +100 +25 +50 +75 +100
TA -AMBIENT TEMPERATURE-OC TA-AMBIENT TEMPERATURE-DC TA-AMBIENT TEMPERATURE-OC
d-DISTANCE -mils
7S7 1575 2362 315 3937
4.5 1.00
4 /
/
In
::E
Vcc· 5V, 1/ ...~ 7
e 3 IF'~ A
U~ 1~======~~7t====i======~====~~/~~~~
RL V
~
N PW-300,.. !ON/tO,... V ~ ~ NORMALIZED
~ 2 PRR-IOOpps // ~ + __ + ____+7
1-______ 1-____1-______ ~~I~t~UE WITH
~V
NORMALIZED TO
N
...
a
RL =2.5KA I-
S
~LACK
SHIELD
REMOVED
:::; 1.5
'"
:Ii
II:: V fl
:l~ .01 FED
~ • -d
-0
i==:t====l==1==±f::=:::==1
~ BLACK
0
Z
... I
./ SHIELD
) .9
/' ~ n~n d
.001~==:t=t==$==:$==t=-_~4==-,-,::-~0
V
a
z
.S
/"
RL - .!
D~G:=
'~"z .7
V ...
.6
./ ...l-'
.5 /'
,.5 I"" I I I r I .00010L...-------2L-.-'-------4L-.-------!6,......--L---~S--------.JIO
IK 2K 3K 4K 5K 6K 7K SK 9K 10K
RL-LOAO RESISTANCE-OHMS d-DISTANCE-mm
291
SOLIDSTR"E
@© ELECTRONICS
1mm Aperture
Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3
The General Electric H22B Interrupter Module is a gallium
arsenide infrared emitting diode coupled tOl silicon darlington
connected phototrlinsistor in. a plastic housing. Thepaclqlging
system is designed to optimize themechanic.al resolution,
coupling efficiency, iUDbient Ught rejection, cost, and reli- 3 4
ability. The gap in the housing provides. a means of interrupt-

ing the signal with an opaque material, Switching the output
from an "ON" into an "OFF" state.
0,
.."
O.
11.6
...
~o .
12.0 .457
.119
.472
.129
NOTES'
. I. INCH DIMEN$IONS ARE
DERIVED FROM MtLLIMETERS.
1t
70 .272 .2"
absolute maximum ratings: (25°C) E

L
2.3
&,.
8.00
....
2.8 .09'
.245
.3,15
.110
.249
TOTAL DEVICE
Storage Temperature _55°C to +l00°C
I
r , Ir~4
- .,.
I
. R,
R
R. I.' NOM.
1.3 NOM.
I.SNOM.
11.0.'.7'1 .
.051 NOM.
.MIHOM.
.051 NOM.
I I S .85 .0304J .059
.'47
_55°C to +lOO°C
260°C
t I~ I ~T~2._ _M_.~._'O_NO_M.~~
" '.45 '36
L ...J L __
(5 seconds maximum)
L-----__________________________________ ~ Z . .s

Forward Current 60 mA Collector Current Ic 100 mA
Forward Current (peak) .3 A Collector-Emitter VCEO 30 V
(Pulse Width ~ 1 fJ.S Voltage
PRR ~ 300 pps) Emitter-Collector VECO '7 V
*Derate 1.33 rnWrC above 2S~C ambient. **Derate 2.0 rnWrC above 25°C ambient.
individual electricaL characteristics:(25°C) (See Note I)

V(BR)R IR = lOpA V(BR)CEO Ie= ImA
V F IF =60mA V(BR)ECO IE = 100pA
IR VR =5V IcEo VCE =25V
Ci V=O,f= 1MHz Cce VCE = 5V, f= 1 MHz
coupled electrical characteristics:(25°C) (See Note I)

H22B1' .H22B2 H22B3
UNITS
IcE(on) IF = 2mA, VCE = 1.5V 0.5 - - 1.0 - - 2.0 - - ·mA
IcE(on) IF = SmA, VCE = 1.5V 2.5 - - 5.0 - - 10 - - mA
ICE(on) IF = lOrnA, VCE = 1.5V 7.5 - - 14 - - 25 - - rnA
VCE(sat) IF = IOrnA,Ic = 1.8mA - - 1.0 - - 1.0 - - 1.0 V
VCE(sat) IF = 6OmA,Ic = 50rnA - - - - - 1.5 - - 1.5 V
ton VCC = 5V, IF = lOrnA, RL = 750n - 45 - - 45 - - 45 - fJ.S
torr
VCC=
Vcc =
5V.IF = 6OrnA, RL
5V, IF = lOrnA, RL
= 75n
== 750n
-
-
-
250
-
-
-
-
7
250
- -
-
7 -
-
p.s
Vcc= 5V, IF =,6OrnA, R,. = 75n - _. - - 45

-
- -
250
45 -
ps
ps
Note 1. Stray madiation can alter values of charactenstlcs. Adequate shlelding should be proVlded.
292
IH2281, H2282, H2283 I
(
100 100
38
--
NORMALIZED TO
40 "cE·I.5V, IF " 5mA, TA=25"C
I- I-
....z 20
Z
.... INPUT PULSED
II:
.....1-- .... I;;:,
II:
;;:,
0
I-
10
8
6
L
o
I- 10
IF "100 mA
..,.
;;:, 4 IF"60"lA_ _
0.. ~
I-
;;:, ~ I-
2 ;;:, ~
0 o IF"3D mA ~
/ NORMALIZED TO'
Q I
.... .8 IF ·5mA ....N
Q
IF"ao.;A
!::! .6 VCE "1.5 V
...I
.4 / :::i
ct ct
::I!
II:
0 .2 V PULSED
PW='OO,.s
:IE
II:
o
I I,"IO;r-
~
c$ ·8~ / PRR" 100 pps Z
'- 1,"5 mA
.6 !
....'"<J .04
/
....'"
<J
I
.02 IF"2~
0.1 -50
2 4 6 8 10 20 40 60 80 100 200 400 600 1000 -25 0 +25 +50 +75 +100
I .... INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-oC
DETECTOR EMITTER
NORMALIZED TO ' I I I /
2
I ~= ~,TA=25°C
IF 10 mA I-
==
-
NORMALIZED TO:
VCE=2SV ,/
~ I-
t-t- IC = 50mA
IF
PULSED
PW=IOO ,.s,PRR=IOO pps
z
~ 103
- TA =25°C
/
Z
....
~ 10 3
60:\ II: J
~I-- ;;:,
~~
Q o
....N o
.rr; .y IIJ
:::i '"
II:
C§ 102
.::,.v«-.::,.o/ ~
~ 102
! ,
I
0.8
!
IC _ 3.6mA
IF - 20 mA - I C 1.8tA ~=0.9-::A
o
IIJ
!::!
..J
L /
IIJ
...I
o
IIJ
-
-
----,
NORMALIZED TO:
VR=SV
TA = 2SoC
;::::::=
;:L
.
$
i
0.6
-if=IOmA IF 5mA ~
II:
o
10
il N
:::i
ct
2
10 /'
Z, / II:
oZ /
:ilo 1// I
II:
I ............
0.4 H H
I I
-50 -25 0 25 50 75 100 0. 25 50 75 100 0'25 50 75 100
TC-AMBIENT TEMPERATURE-OC TA-AMBIENT TEMPERATURE·oC TA-AMBIENT TEMPERATURE·OC
3. Vcefsat) VS. TEMPERATURE 4. LEAKAGE CURRENTS Vs. TEMPERATURE
d-DISTANCE-mils
4 787 1575 2362 315 3937
I I I 1.00
IF RL /
~ I
J~G:
t
2 ....
~ I~======~~=tl====~======~====:;t/~~~~~
Q
....N NORMALIZED
~
PW = 300,.s
f - - - PRR "100 pps t ~ t----+-f---If-----t---+-,
I TO VALUE WITH
~~~6eED
::I! ~
RL o~ ~LACK
.B r--- I F' 7.5 AMPS,Vec' 5 V
~ . // SHIELD
.6 f - - - NORMALIZED TO' - ~ -d1:==:$====~=:t=±;~~~1
~~
Q .4
RL -7500
";f'/ / :;
~
.01 E 0
+ -0 -; ~ BLACK
SHIELD
~~
Z
~ n~n
ct
d
~~
.2
] .OOI~==$=*==$==:$=$-~~+=~....:-=-o~
?V
'"
....<J
0. I 10
~
20 40 60 80100 200 400 600 BOO 1000 1500 .OOOI0~----:!2:---'---...J4~----:!:6--L--~8------:l10
75 750
5. SWITCHING SPEED VS. RL 6. OUTPUT CURRENT VS. SHIELO DISTANCE
293
SOLID STATE
@ D co ELECTRONICS
1mm Aperture
Photon Coupled Interrupter Module H22B4, H22BS, H22B6
The General Electric H22B Interrupter Module is a gallium
arsenide iilfrar.ed emitting diode coupled to a silicon darlington
connected phototransistor in a plastic housing. The packaging
system is designed to . optimize the mechanical resolution,
coupling efficiency, ambient light rejection, cost,and reli- i"u..
®"
SYMBOL
,A,
A
4a'b
3.0
10.7'
.600
J
M~~~ME::A~
3.2
11.0
.750
M::.CHE!.x.
'422~l···.·
.119
.024
.125
.Q3O
NOTES
SECTION x·;r bI .50 NOM. .020 NOM, 4

ability ..The gap· in the housing provides.a meansofinter:i:upt- LEAD PROFILE
NOTES'
3
D, . 11.6 12.0 .457 .412
ing the signal with ~an opaque material, Switching the output 02 3.0 3.3 .119 .129
OERIVEO FROM MILLIMETERS •
•J 6.9 7!i .272 .295 2.
from an "ON" into.an "OFF" state. 82 2.3 2.8 .091 .110
E 6.15 6.35 .243 .249
absolute maximum ratings: (25°C) L 8.00 .315 T

3. THE SENSING AREA IS DEFINED
BY THE ·s"
DIMENSION ANO
BY DIMENSION ·'T" 10.75 MM
R 1.3 NOM. .051 NOM. U .030 INCH).
TOTAL DEVICE R, 1.3 NOM. .O~iI NOM.
R! 1.3 NOM. .051 'NOM.
.8511.0
'~ ~.4
S .0341,039
Storage Temperature -55°Cto +IOO°C 5,
T
3.45
2.6
3.751,136 .141
M. .ro NOM. r- , r--- ,
Operating Temperature _55°C to +lOO°C I
I
I I
1",",1
I
1
Lead Soldering Temperature 260°C : hI II 1 1 I
(5 seconds maximum) 2 ... - _J L____.J 3

Forward Current 60 mA Collector Current Ic 100 mA
Forward Current (peak) 3 A Collector-Emitter VcEo 55 V
(Pulse Width .e;;; I J.IS Voltage
PRR.e;;; 300 ppS) Emitter-Collector VECO 7 V
individ ual electrical characteristics:(25 °C) (See Note I)

V(BR)R IR = 10~ V(BR)CEO Ic = I mA
V F IF =60mA V(BR)ECO IE = 100~
IR VR =5V IcEo VeE = 45V
C j V=O,f= IMHz Cee VCE = 5V, f= I MHz
coupled electrical cnaracteristics:(25°C) (See Note I)

H22B4 H22B5 H22B6
UNITS
IcE(on) IF = 2mA, VCE = 1.5V 0.5 - - 1.0 - - ,2.0 - - rnA

IcE(on) IF = SmA, VCE = 1.5V 2.5 - - 5.0 - - 10 - - mA
ICE(on) IF = 10mA, VCE =1.5V 7.5 - - 14 - - 25 - - mA
VCE(sat) IF = =
10mA, Ic 1.8mA
,
- - 1.0 - - 1.0 - - 1.0 V
VCE(sat) IF = 60mA, Ic SOmA= - - - - - 1.5 - - 1.5 V
ton VCC= 5V,IF = IOmA, RL = 750ll - 45 - - 45 - - 45 - p.s
VCC = 5V, IF = 6OmA, RL = 75ll - - - - 7 ~
- 7 - p.s
toff VCC= 5V, IF = 10mA, RL = 750ll - 250 - - 250 - - 250 - p.s
Vec= 5V,I F =60mA;RL = 75ll - - - - 45 - - 45 - p.s
294
IH22B4. H22B5. H22B6 I
100 100
a8
40
NORMALIZED TO
VcE"'~V, IF " SmA, TA=2SoC
I- I-
z -I""" Z
....0: 20 ....0: INPUT PULSED
........ f-'"
~ 10 0:
~
IF "100 mA
B
-r
-
0 0
6
-- --
I- ./ I-
~ 4 ~
10
Q. Q. IF"tiO "lA
I- ~ I-
~ 2 ~ I"""'
0 0 I F -3D-mA
./ NORMALIZED TO '
0 I
....
N
.B IF' 5 mA ....N0 I F " 20 "lA
:::; .6 VCE =I.5V
/ :::;
IF"'O~
<l .4 <l
::Iii
0: .2
~ PULSED
PW"OO~.
2:
0:
0 0
Of
C
.1 / PRR=IOO ppi Z
I F "5 mA
... ·8
B
.,g .6 -C
.,g
....u .04
/ ...
....u
I
.02 IF"2~
0.1 -50 -25 o +25 +50 +75 +100
2 4 6 B 10 20 40 60 80 100 200 400 600 1000
I
DETECTOR EMITTER
NORMALIZED TO' 1 1
104 104
2
1-+- ~= 50mA
I .!k = I.B mA ,TA= 250C
IF 10 mA
I-
....z
0:
~
f---
NORMALIZ£D TO:
VCE=45V / ~
I-
....z
0:
PULSED 0: r- TA = 25°C 0:
~
IF PW=IOO ~s,PRR=IOO pps
i3 103 L L 0,03
60:\ ....
~~
r-r-- ~
....No "
0: ..p
~ I--- :
~'7-~~
<l
:::;
<l
o
f;3 102
"
c(
~ 102
S IC 3imA /
N
:::;
/ ....o
=
-
NORMALIZED TO:
VR=5V
=
:2
I O.B
IF" 20 mA - , C I.BmA .!£." 0.9'A
<l
::Iii
1/ /
!:::!
..J
- TA =25°C
../
-1F"'OmA 5mA 0: 10 <l 10
'F !iI
:Ii
0:
o / / o .,/
....o Z
I
H III 1/ 0: 1/
H
. 0.4
/
III
-50 -25 o 25 50 75 100 0. 25 50 75 100 O. I25 50 75 100
TC-AMBIENT TEMPERATURE-oC T A-AMBIENT TEMPERATURE _oC TA-AMBIENT TEMPERATURE-oC
d-DISTANCE -mils
7B.7 1575 2362 315 3937
4
1
IF
1
RL
1
1.00F====t:==:;t=I=====t=====l~~=~
I ,
J~G: E I
~
2
o
....N
:::; PW"300~S
?- ~ 1~======~==tl====~======~====~tE/NO~R~M~A~L~IZ~E~D~
~ I TO VALUE WITH
r---- it I------+--J----il-----+---+-, ~~~aeED
<l
::Iii
!!5
z
-~
...
I
.6
PRR "100 pps
.B I---- I F" 7.5 AMPS,Vce' 5 v
r----
Rl
NORMALIZED TO-
RL -750,Q
-
7/
//
/
-7
~
o
f;3
~
.01
rri
•
SHIELD
0
•
LACK
-d
-0
=1====1=====t===f:=±====1
-+----+----1----+ ~ BLACK
o .4 ~ SHIELD
~
Z
~ (l~.n -
//
<l
------II--+----I-----i--+ do
-~
.2 g
;;;
....u
.001~======:t~======~======~==~=-~~~==~~~
~
~V'
I
0'10 .00010~----:2~...L.---4~---~6:---.L...--=B---~10
20 40 60 BOIOO 200 400 600 800 1000 1500
75 750
295
SOLID STATE
@. co ELECTRONICS
1mm Aperture MILLIMETERS INCH
. SYMBOL/----:-,--.-t--r----1 NOTES
Photon Coupled Interrupter Module H22L1,H22L2 MIN. MAX. MIN. MAX.
A 10.7 11.0 .422 .433
The General Electric H22L series is a gallium arsenide, infrared
emitting diode coupled to a high speed integrated circuit detector. .b
Al
b1
3.0
.600
3.2
.750
.50 NOM.'
.119
.024
.020
.125
.030
NOM.
2
2
The output incorporates a Schmitt Trigger which provides 01
02
11.6
3.0
12.0
-
.457
.119.
.472
-
hysteresis for noise immunity and pulse shaping. The gap in the .1 6.9 7.5 .272 .295
"2 2.3 2.8 .091 .110
plastic housing provides a means of interrupting the signal with "3 1.14 1.4 .045 .055
E 6.15 6.35 .243 .249
an opaque material, switching the output from an "ON" into an L 8.00 - .315 -
"OFF" state. R 1.83 NOM. .072 NOM.
Rl 1.3 NOM. .051 NOM.
absolute maximum ratings: (25 0 C) R2
5
1.3 NOM.
.8~ I
1.0
.051 NOM.
.034 1.039
51 3.94 NOM. .155 NOM.
TOTAL DEVICE T 2.6 NOM. .103 NOM.
NOTES:
Storage Temperature TSTG -55°C to +85°C 1. INCH DIMENSIONS ARE DERIVED FROM MILLIMETERS.
2. FOUR LEADS. LEAD CRO~ SECTION IS CONTROLLED
Operating Temperature TJ -55°C to +85°C BETWEEN 1.27 MM (.050"') FROM SEATING PLANE AND
THE END OF THE LEADS.
Lead Soldering Temperature .TL 260°C 3. THE SENSING AREA IS DEFINED BY THE "'5"' DIMENSION
(5 seconds maximum) AND BY DIMENSION "'T"' ±0.75 MM (±.030 INCH).
INFRARED EMITTING DIODE PHOTO DETECTOR
Power Dissipation PE ·10.0. mW Power Dissipation "150. mW

Forward Current IF 60 rnA Output Current 50. rnA
(Continuous) Allowed Range 0. to 16 V
Forward Current (Peak) IF 3 A Allowed Range 0. to 16 V
(Pulse width:::;; 1 IlS ··Derate 2.0 mWre above 25°e ambient.
PRR :::;; 30.0. pps)
·Derate 1.33 mwre above 25°e ambient.
individual electrical characteristics: (0-70 0 C) (See Note 1)

Forward Voltage VF - 1.10. 1.60. volts Operating Voltage Range Ve 4 - 15 volts

(IF = 20 rnA)
Supply Current 13 (off) - 1.0. 5.0. milli-
Reverse Current IR - - 10 micro- (IF =0., Vee =5V) ampere
(VR = 3V) ampere
Output Current, High IOH - - 10.0. micro-
Capacitance
(V =0., f =1 MHz)
q - - 100. pico-
farads
(IF =0., Vee =Va =15V) ampere
coupled electrical characteristics (0-70 0 C) (See Note 1)

Supply Current 13 (on) - 1.6 5.0. milliampere

(IF:: 2DmA, Vee:: 5V)
Output Voltage, Low VOL - 0..2 0..4 volts
(RL:: 270.O Vee =5V, IF =20. rnA)
Turn-On Threshold Current IF(on) H22L1 - 20. 3D milliampere
(RL =270.0, Vee =5V) H22L2 - 10 15.0. milliampere
Turn-Off Threshold Current IF (off) H22Ll 0..5 15 - milliampere
(RL = 270.0, Vee =5V) IF(on) H22L2 0..5 8 - milliampere
Hysteresis Ra~io IF(off)IIF(on) 0..50. 0..75 0..90. -
(RL =270.0, Vee:: 5V)
. Switching Speeds: (RL =270.0, Vee =5V,TA '" 25°~ IF'" 20. mA)
Rise Time tr - 0..1 - Ilsec.
Fall Time tf - 0..1 - Ilsec.
296
IH22L1, H22L21
6 1.6
.... I I J
Z
VOH I&J I I I
a:
II:
-
1/1 ::> TURN ON THRESHOLD
!:i u 1.2
g t-T 1
I
I&J
4
o
...J
o
:z:
..,. ,,- 1 1 I
J
~ f'"
~
!:i
o 3
IF(OFF) !RON)
II:
~ 0.8
1/ ..-- TURN OFF THRESHOLD - r--
> o /' I I I
....
i
I&J
N L J I I
~ 2 Vee: 5V
:J
<[
V NORMALIZED TO'
o TURN ON THRESHOLD
I RL:270.!l ~ 0.4 AT
~ TA :25"C o Vee=5V, TA=25°C
I z
I
VOL II.
.... I I I
I I I
5 10
o 4 8 12 16
IF - INPUT CU RRENT -mA V ee - SUPPLY VOLTAGE, VOLTS
.
1.0 1.8
UI
t0
;;:
~ f ~
1.6
0 0.5 V Z
> /'
~
I
/ ...~ 1.4
0
...J
W- 0.2
./
'I' I
....z 1.2
/
",
(!)
~
0 0.1
V I&J
II:
II:
:;)
u
1.0
V
./
>
....::> 0
.... 0.8 ./
Il.
....::>
0
I
....
.05
./
L"
0
X
1/1
I&J
II:
...
x
0.6
0.4
-...--'
0 .". Vcc=5V 0
I&J
> N
NORMALIZED TO:
.02 TA =25°C ::i Vcc '5V
<[ 0.2
::E TA"25°C
II:
0.01
I 2 5 10 20 50 100 ~ -50 -20 10 40 70 100
12 - LOAD CURRENT, - m A TA -TEMPERATURE - DEGREESC
ON VOLTAGE VS. LOAD CURRENT THRESHOLD CURRENTS VS. TEMPERATURE
=±gCK
100 10
, ...
....
-'
, iEa: 8 I I
50
./ ./
~
./
a: SHIELD m ~LACKI
0<[ /'
/
/ / ao 6 r - - - + ~=~
~SHIELD
-d
/~
E
... I 20 / / ...J
o
:z:
_0
Z
I&J
II:
TA'8~y 25"/ -550Y 13
a:
:z:
4
~ 10 ....
u ow NORMALIZED TO:
o N
II: Vec=5VI
; 5
I
I
I
I :J
~ 2
\ I F=20mA
\ r
~ I I I a:
o
d=4mm
PULSED 100Hz.
I
I I z
I
..'!' 2 !....
z r W 10
1\
I I
/
.9 1.0
/ 1.1
I
1.2 1.3 1.4 1.5
g
LL
1
o 2 3 4 5
.=
6 7 8 9
d-DISTANCE-mm
FORWARD VOLTAGE VS. FORWARD CURRENT THRESHOLD CURRENT VS. SHIELD DISTANCE
297
SOLID stATE
-@) 0 . CO ELECTRONICS
Matched Emitter-Detector
pair H23A 1-H23A2
The General Electric H23A1 is a matched emitter-aetector
pair which consists of a gallium arsenide, infrared emitting SYM :Nt INCHES NOTES
MIN MAX MIN MAX
diode and a silicon phototransistor. The clear epoxy packag-
A 6.59 5.80 .220 .228
ing system is designed to optimize the mechanical resolution, 1.78 NOM • .070 NOM 2
B
coupling efficiency, cost,and reliability. The devices are
~
EI D I/>b .60 .75 .024 .030 1
marked with a color dot for easy identification of the emitter
1~ b,. .51 NOM • •020 NOM 1
and detector. ET '. 0 4.45 4.70 .175 .185
G
-IG ."b-.0-i- E 2.41
.58
2.67
.69
.095
.023
.IQ5
.027
rl
E,
SECTION x-x
r-a_b_s_o_1u_te_m_a_x_i_m_u_m_r_a_t_in..;;;;9;...s_:...;...(2_5_0_0-')'-----"'1. t LEAD PROFILE • 2.41 2.67 .095 .105 3
G 1.98 NOM. .078 NOM.
EMITTER-DETECTOR PAIR . A
L 12.7 - .500 -
L, 1.40 1.65 .055 .065
Storage Temperature TSTG -55°C to +100°C 1&' T SEATING

PLANE NOTES:
S .83 .94 .033 .037 3
Operating Temperature TJ -55°C to +100°C 1. Two leads. Lead cross section dimensions uncon-
ij.l
Lead Soldering Temperature TL 260°C L' x x trolled within 1.27 MM (.050") of seating plano.
2.' Centerline of active element located within .25 MM
(5 seconds maximum) (.010") of truo position.
3. As measured at the seating plane.
4. Inch dimensions derived from millimeters.
I 2

Power Dissipation PE *100 mW Power DiSSipation PD **150 mW
Forward Current IF 60 rnA Collector Current IC 100 rnA
Forward Current (peak) IF 3 A Col1ector~Emitter VCEO 30 V
(Pulse Width ~ IllS Voltage
PRR E;; 300 pps) Emitter-Collector V
*Derate 1.33 mWrC above 25°C ambient. **Derate 2.0.mWrC above 25°C ambient.
individual electrical characteJistics (25 °0) (See Note 1)

V(BR)R IR = 10J,tA V(BR)CEO Ie = 1 rnA
VF IF =60mA V(BR)ECO IE = 100J,tA
IR VR = 5V ICED VCE = 25V
Capacitance - 30 - pF Capacitance - 3.3 5 pF
yV=O,f=lMHz Cce VCE = 5V, f= 1 MHz
coupled electncal charactenstlcs(25 °O){See Note 1)

Note: Coupled electrical characteristics are measured at a separation distance of 4mm (.155 inches)
with the lenses of the emitter and detector on a common axis within O.lmm and parallel within 5°.
ICE(oo) IF = 30mA, VCE = SV H23A1: I.S - - rnA
. H23A2: 1.0 - - rnA
VCE(sat) IF = 30IIlA, Ic = 1.8mA H23A1: - - 0.40 V
IF = 30mA,Ic = .SmA H23A2: - - 0.40 V
too Vcc = SV, IF = 30rnA, RL = 2.SKO - 8 - p,s
toff Vcc = SV, IF = 30rnA, RL = 2.SKO - SO - p,s
298
TYPICAL CHARACTERISTICS H23A 1-H23A2
20 4
10 -I- IF'IOOmA
-- ---
~
z 60m A
~
..... 1"
1,..-
~ 1.0 I - -
o
~1;"m A
I
~~ I-
~ I--
::)
11.
./ ~
V NORMALIZED TO
1-1-
::)
o 110mA
VeE -5V
1/ IF = 30mA fl t-- I--
.I
d=4mm ~~ !::!
1-1- ..J
PULSED 1-1- ~ O. I I - - 1--1mA
/
-
PW=\OOj.ls II: -I---
PRR = 100pps 1-1- oZ
~l
/ NORMALIZED TO
I=~
I
I ...jdj.- I - -
I VCE=5V. IF " lIOmA. TA=25°C. d=4mm.
~I~
1-1-
I-f- IIJ
PULSED
0.00I I
1-1-
.9
0.0I
PW,' 100is• 7R= 1,0PPj , I , I
I--
2 4 6 8 10 20 40 6080100 200 400 600 1000 -55 -25 o 25 50 75 100

10 14
, o d le=LSmA.IF PULSED PW=100,.•• PRR=IOOpps
, I--
H
~~
NORMALIZED TO: t...f I--
....
~ ~ II/
VCE a o.4V. IF a 30mA. d=4mm. IF=loo,mA
~ ~ 1==
12
PULSED
I-- V
I~~
60~A
PW·lOo,... PRR -IOOpps.
,
10
,\. I'..
" r-...
\' !'\ ........
t'..... E
V
~ 8
r-...' ........ t'..... r----.k.
Jl'\
-----
o 1/
I
I
: \.
'\
.......... ........
........... -..... f-
z
c(
Iii 6
I II lIOmA
'\ "' ........ ["'-... ....... r..........
-
_r--!~mA I
is,
: r--
·
I
I
·
I
:
"- "-
........
r-
I"""-...k.
--
.....
-..... -.....
r-
r--
-f-
~
3OmA-
.~
...
4
2
77/1
TT
II V
II I V
./
--
- ....
20~A
10":A
·, 20 lIO 40
5mA
50
r-- ~
60 70 'ha0.1
'/ II omA
10
d-DISTANCE-mm
3. OUTPUT CURRENT VS. DISTANCE 4. VeE (satl VS. DISTANCE
SENSOR IRED EMITTER
1/ I
/
/
."V
Jo 1/ V I
r-- I-~¥:~
/'
/ /~v"4. V
f.)~ I
-I~
I II NORMALIZED TO _ /'
VCE a25V
IV J = V NORMALIZED .TO
11'
TA -25"C VR =5V
TA = 25°C
=
-
0.'25 50 75 10025 50 75
6A. OUTPUT CURRENT 6B. OUTPUT CURRENT

5. LEAKAGE CURRENTS VS. TEMPERATURE VS. VS.
SHIELD DISTANCE DISPLACEMENT
(ANGULAR & AXIS)
299
SOLID STATE
@ 0 CO ELECTRONICS
Matched Emitter-Detector
Pair H2381 SVM :~~Ifs INCHES NOTES
The General Electric H23B1 is a matched emitter-detector MIN 'IIAX MIN MAX
pair which consists of a gallium a.rsenide, infrared emitting A 5.59 5.80 .220 .228
diode and a silicon, darlington connected, phototransistor. B 1.78 NOM. .070 NOM 2
.024 .030 1
~
The clear epoxy packaging system is designed to optimize the EI D I/>b .60 .75
mechanical resolution, coupling efficiency, cost, and relia-

bility. The .devices are marked with a color dot for easy
identification ofthe emitter and detector.
ET "
-IG
ln
</>b
l
...i..
T
bl
bl
0
E
El
.51 NOM.
4.45 4.70
2.41
.58
2.67
.69
.020 NOM
.176 .185
.095
.023
.105
.027
1
SECTION x-x
• 2.41 2.67 .095 .105 3
11; ~
LEAD PROFILE
G 1.98 NOM. .078 NOM
L 12.7 - .500 -
absolute maximum ratings: (25°C) 1.40 1.65 .055 .065
4T.'
Ll
S .83 .94 .033 .037 3
EMITTER- DETECTOR PAIR SEATING
~~~~~~-=~~~~~~~----------------~ PLANE NOTES:
Storage Temperature TSTG _55°C to +100°C 1. Two leads. Lead cross section dimensions uncon-
1J ~~
trolled within 1.27 MM (.050") of , ..tlng plane.
Operating Temperature TJ -55°C to +100°C L x x 2. Centerline of active element located within .26 MM
(.010") of true position.
Lead Soldering Temperature TL 260°C 'I • '. 3. As measured at the saating plane.
(5 seconds maximum) 4.' Inch dimensions derived from millimeters.
DARLINGTON CONNECTED
Power Dissipation PE *100 mW Power Dissipation PD **150 mW
. Forward Current (peak) IF 3 A Collector-Emitter 30 V
VCEO
(Pulse Width EO; 1J,Ls Voltage
PRR EO; 300pps) Emitter-Collector VECO 7 V
*Derate 1.33 mwtC above 25°C ambient. **Derate 2.0 mWrC above'25°C ambient.
individual electrical characteristics (25°C) (See Note 1)
EMITTER MIN. TYP. MAX. UNITS DETECTOR MIN TYP. MAX. UNITS

V(BR)R IR = 10J,LA V(BR) CEO Ic = 1 rnA
VF IF =60mA V(BR)ECO IE = 100J,LA
IR VR =5V ICEO VCE = 25 V
Ci V=O,f= 1 MHz Cce VCE = 5V, f= 1 MHz
coupled electrical characteristics (25°C) (See :Note 1)

Note: . Coupled electrical characteristics are measured at a separation distance of 4mm (.155 inches)
with the lenses of the emitter and detector on a common axis within O.lmm and parallel within 5°.
ICE(on) , IF = lOrnA, VCE =l.5V 7.5 - - rnA

VCE(sat) IF = lOrnA, Ic = 1.8 rnA - - 1.0 V
ton VCC = 5V, IF =lOmA, RL = 7500 - 45 - JLS
toff VCC= 5V, IF =: lOrnA, RL = 7500 - 250 - J,LS
Note 1: . Stray irradiation c~ alter values of characteristics. Adequate shielding should be provided.
300
TYPICAL CHARACTERISTICS H2381
---
20 10
_ I , =l00mA
1--. -IF=~
.....
.,/ IF=~
/' -IF'~
I
I
- I F =10m A ~
-
/ I
/ NORMALIZED TO: -Idl- IF=rmA _ _
~ ~=~
VCE = 1.5
./ IF = 10mA ~-I-
I-I-
/ d=4mm
PULSED PW=IOO/l-s
I
11/ PRR= loopps r--1F =2mA

~ NORMALIZED TO: I-:'dl--
~? ~
·c VCE=1.5V,lF=lOmA, TA=25"C
S d=4mm
OJ
U
....
.0I
PRR=I~OPPS 1
PULSED PW=tOO/l-S,
2 4 6 8 10 20 40 60 SOIOO ZOO 400600 KlOO -55 -~ 0 +~ +50 +75 100

IF-INPUT CURRENT- mA TA- AMBIENT TEMPERATURE _oC
10
, NORMALIZED TO; 0l-td
~~
VcCI. OV , IF=10mA-+-f ~
~~ r-... . d=4mm
PULSED PW=100/l-S,PRR=lOOprs-
\\~
I
\i\'
\\\
'"'"
'\. .........
.......... t'--...
\:\ """" '"
~'" t'-.... t--
.I
"i\
i\
'\.
"-
l"-.
~
......
'"
.........
.........
1--. - --
r--..... r--
~
!F=100mA
I
"" IF=30mA
I
I
I
4 10
"\.
" IF=2mA
.'f.-.
20
......
f'--,...
30 40
d-DISTANCE-mm
50
t--..
t'-- --
IF=5mA ~
~Om;:
IF=tOmA_
t---
60 70
3. OUTPUT CURRENT VS. DISTANCE 4. VCEIsatl VS. DISTANCE
9-ANGULAR DISPLACEMENT-DEGREES
DETECTOR EMITTER
1.0
o10 20 30 40 50 600
I
=-NORMALIZED TO NORMALIZED TO'
I
BL~~ :jd
s 4mmr-
~[J=~L
-VR=5V ~HIELO
~ 8~LIZEJTO:'"
VCE'25V I-
4- TA =25·C
~~~
-TA-25·C Z
10
./ I-
....
I-
Z I~
z .... VALUE OF ICE tOftI
III
II: 1/ / II:
II: -1:m L
I
ATVCE s I.5V,=
-d~4mm "'---~"OmA,_
::)
.()
l-
~ 105 / / ::)
i(
()
4m~_ 9=0·,-
u I- ..:;]1' \.
'i d=4mm_ I-
>0:
I is
::)
~/ /
~
102 _ . : r , ' l / /'
./
~
::) J]ib \ 1\ ~
~ ~Ao
Q I o I
Q
III ==-.$o~F;(o~ o
N
N .... \9
I~
:::i
'a" I0
77rt
/ ..),(;
...........
./
, N
:J
~ NORMALRED~ ~~RMALIZED TO'
:::;
a:
o
z
~I II: INIWE OFtCEtanl VALUE OF ICE Con)
// o AT VCE"'.5V, AT VCE=1.5V,
I
,1/ 7
Z
I IF'IOmA, IF'IOmA,
\ -
c
.ew
o
...~ ]
OJ
WITH SHIELD AD-O, .1
REMOVED
\ ....u
o
H
l~miGA7 d a 4jm.
1\
I
25 50 75 100 25 50 75 100 2 3 4 5 6 0 I 2 3 4 5 6 01
TA -:AMBIENT TEMPERATURE-oC . d-DISTANCE-mm AD-AXIS DISPLACEMENT -mm
5. LEAKAGE CURRENTS VS. TEMPERATURE 6A. OUTPUT CURRENT 68. OUTPUT CURRENT
VS. VS. .
SHIELD DISTANCE DISPLACEMENT
(ANGULAR & AXIS)
301
SOLID STATE
@o ©ELECTRONICS
MILLIMETERS INCHES
Matched .Emitter-Detector Pair H23L1 SYM.
A
MIN.
5.59
MAX.
5.80
MIN. MAX.
.220 .228
NOTES
6 1.78 NOM. .070 NOM . 2

~155
The General Electric H23L1 is a matched emitter-detector pair 61 3.68
.60
3.94 .145
.030 1
~b .75 .024
which consists of a gallium arsenide, infrared emitting diode bl .51 NOM. .020 NOM . 1
2 0 4.45 4.70 .175 .185
and a high speed, integrated circuit detector. The output E 2.41 2.67 .. 085 .1OS
El .58 .69 .023 .027
incorporates a Schmitt Trigger which provides hysteresis for
noise immunity and. pulse shaping. The detector circuit is opti-
•.1 2.41
1.14
2.67
1.40
.095
.045
.105
.055
3
3
G 1.98 NOM. .078 NOM .
mized for simplicity of operation and utilizes an open collector L
L1
12.7
1.40
-
1.65
.500
.055 .065
-
1
output for maximum application flexibility. The clear epoxy R 1.27 NOM. .050 NOM .
3 S .83 .94 .033 .037 3
packaging system is designed to optimize the mechanical DETECTOR V cc T - 1.65 - .085
resolution, coupling efficiency, cost, and reliability. The devices (BLUE)
NOTES:
are marked with a color dot for easy identification of the 1. Two leads. Lead cross section dimensions uncon
emitter and detector. -jb,b.- trolled Within 1.27 MM (,050") of seating I?lane.
(7j b, (.010") of true polition.
~b...)LJT 3. As measured at the seating plane.

4. Inch dimensions derived from millimeters.
SECTION X·X
absolute maximum ratings: (25 0 C) LEAD PROFILE
EMITTER-DETECTOR PAIR TYP.
Storage Temperature TSTG -55°C to +85°C -.L

T
Operating Temperature TJ -55°C to +85°C
Lead Soldering Temperature TL 260°C
T
(5 seconds maximum)
~ 1/16" (1.6mm) from Case EMITTER IT DETECTOR UU
--\5 ., -Is
R=RADIUS+ C
0,
0/
Power Dissipation PE -100 mW PHOTO DETECTOR
Forward Current IF 60 rnA
(COntinuous ) Power Dissipation PD "150 mW
Forward Current (Peak) IF 3 A Output Current 12 50 rnA
(Pulse Width ~ 1 p.s
PRR ~ 300 pps)
Allowed Range Vee o to 16 V
Reverse Voltage VR 6 V Allowed Range V21 o to 16 V
·Derate 1.33 mW/"C above 25°C ambient. ··Derate 2.0 mW/"C above 25°C ambient.
302
individual electrical characteristics (0-70 0 C)
EMITTER MIN. TYP. MAX. UNITS
DETECTOR (Ee = 0) MIN. TYP. MAX. UNITS
Forward Voltage VF - 1.10 1.50 volts
=
IF 20 rnA Operating Voltage Range Vee 4 - 15 volts
Reverse Current IR - - 10 micro- Supply Current 13(off) - i.o 5.0 milli-
(VR 3V) = ampere (IF = 0, Vee = 5V) ampere
Output Current, High IOH - - 100 micro-
Capacitance CJ - - 100 pica-
=
(IF 0, Vee Vo = 15V) = ampere
(V 0, f = = 1 MHz) farads
coupled electrical characteristics (0-70 0 C)

Note: Coupled electrical characteristics are measured at a separation distance of 4mm (.155 inches) with the lenses of the
emitter and detector on a common axis within O.lmm and parallel within 50
Supply Current I 3 (on) - 1.6 5.0 milliampere

=
(IF 5 rnA, Vee = 5V)
(RL = 2700, Vee = 5V)
Turn-On Threshold Current IF(on) - 10.0 20.0 milliampere
=
(RL 2700, Vee = 5V)
Turn-Off Threshold Current IF(off) 1.0 7.5 - milliampere
=
(RL 2700, Vee = 5V)
Hysteresis. Ratio IF(off)/IF(on) 0.50 0.75 0.90 -
=
(RL 2700, Vee 5V)=
Switching Speeds: (RL = 2700, Vee = 5V, TA = 25°C
Rise Time tr - 0.1 - JJ.sec.
Fall Time tf - 0.1 - JJ.sec.
6 100
VOH 50
oJ'
....:
, ,
, , ...
./ 1.00"'"
<II
':i
<[ /' ./ /'
E
g
I 4 .I 20 / V /'
III
!i IF (OFF) ~ONl
z
w
a:: TA.8~y 25Y -55"cj
':i 3 ~ 10
..
g
::;)
Q.
u
Q
a::
; 5 .1 1
1
5 2 I I
o
I
Vee= 5V
RL=270n ~ I I I
o TA
/ I
I
> =25°C
I ~ 2
I
5 10
VOL
15 20
I ..A.
•
I
.9 1.0
/ 1.1 1.2
/
1.3 1.4 1.5
~-INPUT CURRENT-mA V, - FORWARD VOLTAGE - VOLTS
1. TRANSFER CHARACTERISTICS 2. FORWARD VOLTAGE VS. FORWARD CURRENT
303
I ~23L 11 TYPICAL CHARACTERISTICS
1.0 1.8
E
0
O~>~
;;:
0.5
I '1z
g
1.6
;,
I
./ ...... 1.4
~ ./
(II' I
.... 1.2 L
~ 0.2 z V"
~
:..J
~ 0.1
V L&I
a:
II:
a 1.0
V"
./
9 0.8 L
~ 0 ~
~ .05 ~
../
:x:
Ul
L&I
II:
0.6
... ~
o
I ~ ~
0.4
~ til
>5 Vcc=5V
N
NORMALIZED TO:
.02 TA =25° C :J ...I Vcc '5V
« 0.2
::E TA=25°C
II:
0.01 0
I 2 5 10 20 50 100 z -50 -20 10 40 70 100
It - LOAD CURRENT, - mA TA -TEMPERATURE.- DEGREES C
3. ON VOLTAGE VS. LOAD CURRENT 4. THRESHOLD CURRENTS VS. TEMPERATURE
1.6 100
to- I I I 80
Z
1&.1 I I I ....
60
II:
II:
::> TURN ON THRESHOLD
ffi
II:
40
1.2 II:
-
<.)
o L-- I I a
5 ~ I 1 I 9 20
:r:
~
II: 1/
V
~
TURN OFF THRESHOLD - f--
o
~a: ~
~ lin
If
NORMALIZED TO:
vcc' 5V
RL=270fi
j!: 0.8 x 10 a TA'25°C
o / I I I .... 8 a=-
1&.1
N ./ I I I S 6 PULSED 100Hz
::::i V NORMALIZED TO'
N
~ 4 "" PW=IOO)"s
«
~ 0.4
o
z
TURN ON THRESHOLD
AT
Vcc=5V, TA=25°C
::E
a:
~
" '" ~
.!.. 2
~
I z
....II. I I I I g
I I I ....... I"-...
I
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
o 4 8 12 16
a- APERTURE DIAMETER -mm
V cc - SUPPLY VOLTAGE, VOLTS
5. THRESHOLD CURRENT VS. SUPPLY VOLTAGE 6. THRESHOLD CURRENT VS. APERTURE DIAMETER
8 ANGULAR DISPLACEMENT - DEGREES

10 20 30 40 50 60 70
10
-
8 1. 18
.LAD L
ffi 6 , !Z 8
L&I
a: II I
S! . :.,......- a:
a 4
a6 L
~~
:I
~
IZ
2
/
V - ~ -----
NORMALIZED TO
Vcc=5"
c..j
o
:x:
~ 4
~Tt:J
Ali
1
/ /
1 ~8
L V
II:
:x: RL'270fi
to- 1.0 d=4mm
F .L
:;: 0.8 TA = 25°C
=== c
/ /
N L&I NORMALIZED TO:
PULSED '00 Hz. N
Vee=SV
:J 0.6 PW= 100p,s :::;
« « IF=20mA
::Ii /
~ 0.4
/ ~ 2 8=0· -
~
o
z
V
z d=4mm
I
~... 0.2
/ I
~
PULSED 100Hz
PW:'T JIo 8
H
.......
2 4 6 8 10 12 14
£ 2 3 4 5 6 7
d -DISTANCE- mm Ao- AXIS DISPLACEMENT - mm
7. THRESHOLD CURRENT VS. DISTANCE 8. THRESHOLD CURRENT VS. DISPLACEMENT

(ANGULAR AND AXIS)
304
IH23L 1 I
10
IL
I- f I' f
~ 8
~'r
II:
II:
[)ltJ-d
ae 6 -II--
-0
~ -0
~
o
4mm
\
:I:
::l 4
\ 4mm
II:
:I:
l-
...
e
\ \
\
N NORMALIZED TO:
:::J VCC· 5V
c IF=20mA
~ \
II:
o
2 d=4mm -
\
\ "'OO"i
z PULSED 100Hz
I
~...
...
I
o 2
f\
3 4 5 6 7
d -DISTANCE -mm
9. THRESHOLD CURRENT VS. SHIELD DISTANCE
305
SOLID STATE·
@DCOELECTRONICS
'~ Q4
Photon Coupled Isolator H24A1-H24A2
Ga As Infrared Emittin2 Diodes & NPN Silicon Photo-Transistors
The General ElectricH24A series consists of a gallium arsenide .
r - -,
I ~
I",
I
I
infrared emitting diode coupled with a silicon phototransistor. 2 L - -- .J '5
The devices are housed in a low cost plastic package with lead 1 U r°-l
spacing compatible with. dual in-line. package.
'ill Covered under U.L. component reco$nition prO.,gram~ference file.E51868
absolute maximum ratings: (4:!5°v)
o
b"~+
bt
0,,4
SECTIONX-XT' 2
LEAOPROALE I
"E +!l 31-- E
I~_r-=~
-.-I -
TOTAL DEVICE INCHES MILLIMETERS
SYMBO
MIN. MAX. MIN. ·MAX. NOTES l..~
Storage Temperature TSTG _55°C to + 85°C A
<lib
.350
.024 .030 .600
8.89
.750 I
51
A
Operating Temperature TJ _55°C to + 85°C bt .020 NOM. .50 NOM . 1
0 7 9.5
Lead Soldering Temperature TL 260°C at
a2
.285 .315 7.24 B.O SEATING
.090 .110 2.29 2.79 PLANE
(5 seconds maximum) E .250 6.35
L .300 7.62 1 L
Surge Isolation Voltage (Inputto Output). R .050 NOM. 1.27 NOM.
6000V(peak) 4242V(RMS) S
St
.020 .030
020 .030
.5U
.50
.76
:1 _e, _ _ a 2 _ 1
Steady-State Isolation Voltage (Input to Output). NOTE·
1. FOUR LEAOS; LEAD DIMENSIONS CONTROLLED
BETWEEN .050" 11.27MMI FROM THE SEATING
4500V(peak) 3200V(RMS) PLANE AND THE END OF THE LEADS.
INFRARED EMITTING DIODE (EMITTER) PHOTOTRANSISTOR (DETECTOR)

Forward Current (peak) IF 3 A Collector-Emitter VCEO 30 V
(Pulse Width ~ 1 JJ.S Voltage
PRR ~ 300 pps) Emitter-Collector VECO 6 V
Reverse'Voltage VR 4 V Voltage
*Derate 1.67 mWrC above 25°C ambient. "Derate 2.5 Mwfc above 2SDC ambient.
V(BR)R @ IR= 10 JJ.A V(BR)CEO@IC=I rnA, IF=O
forward Voltage - - 1.7 V Breakdown Voltage 6 - - V
VF@IF =60mA V(BR)ECO@IE=looJJ.A,IF=(]
Reverse Current - - 1.0 JJ.A. Collector Dark Current - 5 100 nA
IR@VR=3V ICEO@VCE= lOY, IF=O
Capacitance - 30 - pF Capacitance - 3.3 - pF
Ci @ V = 0, f= I MHz Cce@VCE=5V,f=lMHz
MIN. TYP. MAX•. UNITS
CTR - DC Current Transfer Ratio (IF = lOrnA, VCE = 10V) H24AI 100 - - %
H24A2 20 - - %
VCE(sat) - Saturation Voltage - Collector to Emitter (IF = lOrnA, Ic = O.5mA) - 0.1 0.4 V
RIO - Isolation Resistance (Input to Output Voltage = 5OOVDc) t 100 - - GO
Cia - Input to Output Capacitance (Input to Output Voltage = O,f = IMHz) t - 0.5 - pF
ton - Turn-On Time - (VCE = 10V, IC = 2mA, RL = 1000) - 9 - IJS
tofT - Turn-Off Time - (VCE = JOV, Ic = 2mA, RL = 1000) - 4 - JJ.s
ton - Turn-On Time - (VCC = 5V, IF = lOrnA, RL= lOKn) - 6.5 - IJS
tofT - Turn-Off Time -(V~c = 5V, IF = lOrnA, RL = lOKO) - 165 - JJ.s
t Measured with input diode leads
shorted together, and output
detector leads shorted together.
306
1H24A1-H24A21
100 10
r- NORMALIZED TO: - PULSED
I-
r- IF'IOmA
VCE·5V
- PW=IOO,.s
PRR=IOOpps
Z I--- -
II!a: TA= 25°C
I
- ::> I F =20mA
u
....
..........
~ I-
~
0.
I.
IF 'IOmA -
I I-
~
o
...o
I
I F =5mA -
I
V
./
NORMALIZED TO:
IF=IOmA
e
Vc 5V
PULSED
N
:J
io --
- --
Z IF=2mA
PWeIOO,,"s I
I PRR=IOOpps ~ O. I
...... r--
J}
I
1 1 1 0.03
.00 I 10 100 1000 I-50 -25 0 +25 +50 +75 +10o
-55
I -INPUT CURRENT-mA TA -AMBIENT TEMPERATURE-OC
10000 10
-
:aa:
~IOOO
~
I _....
-- -- -- -
PULSED
---
I-
...a:
Z
a:
~
o
I-
~
0.
i---
i--- PULSED
Ii---
NORMALIZED TO:
IF"IOmA
VCE e 5 V
PW =100,. s
PRR"IOOPps
- ,/
/
;""
~
IF" 60mA 1 .,.I.--""
" / ----r.:~20m~
--- ~
-
I F "5mA
II I/' -
~
I-
...
Z
;,,"'- I //
. ~ ...
l
100 C
::> N I
u F S 2iA': f-
~
;
o
a:
~
/ PULSED ABOVE 60 mA
PW= 100,,"s ~ 0.I
o
rJ
/
a:
~
I
..'t
10
/
PRR'IOOpps Z
I
i
'"
.!?
."
V1/ IIIL
/ II
II
2
I
I 0.1 I 10 100
VF- FORWARD VOLTAGE -VOLTS VCE -COLLECTOR TO EMITTER VOLTAGE-VOLTS
ETECTOR EMITTER
11120 ~NORMAL~EDTO:~ ~NORMAUZEDTO;------
::f jtON VCE"IO v VR e 5V
~IO4
X
o TA=25°C TA=256 C
'" 10 a:
Q
g
./
/
/.
tOFF
L
a
~103 r'
...
o
I~ ~
~
N
:; v
«
::f
. ,py ..J 102
a:
o
z
...... I
./ NORMALIZED TO: 1/
e,,(.
...o
N
:J L
..
o
o
/. ~
<?' RL=IOKSl
IF=~
RL
/ ~
a:
~I
10
..,.-
..........
z L
~ -?'
« Vcc=5V
1/ 0:
z PW= 300,," S H I"""'"
..0
pPS
TR,r ,
I
1000K
O.I o.1 75
IK 10K lOOK 25 50 75 100 25 50 100
ReLOAD RESISTANCE - OHMS TA-AMBIENT TEMPERATURE _oC TrAMBIENT TEMPERATURE-OC
5. SWITCHING SPEED VS. RL 6. LEAKAGE CURRENTS VS. TEMPERATURE
307
SOLID STATE
@D· co ELECTRONICS
Photon Coupled IsohJtor H24B1-H24B2
Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier
The General Electric H24B series consists of a gallium arsenide
. infrared emitting diode coupled with a silicon Darlington
connected photo transistor . The devices are housed in a low
cost plastic package with lead spacing compatible with dual in·line package.
'U Covered under U.L. component recognition program, reference file E51868
TOTAL DEVICE SYMAOJ INCHES MILLIMETERS
MIN. MAX. MIN., MAX. NOTES
Storage Temperature _55°C to + 85°C A .350 8.89
.024 .030 .60 .75 I
Operating Temperature _55°C to + 85°C b .020 NOM. .50 NOM. 1
7 ~.:; ~
SEATING
Lead Soldering Temperature 260°C 8, .285 .;,t :; 7.~ 4 8.
(5 seconds maximum)
82
E
.090 .t t 0 2.29
.25
2.79
. 6.35
, PLANE
Surge Isolation Voltage (Input to Output).

L
R
S
.300
.050 NOM.
.020 .030
7.62
1.27 NOM.
.50 .76
1
rll"
X X
6000V(peak) 4242V(RMS) ~, 0.:0 .030 .5 .76
4-'-8, __
82
Steady.State Isolation Voltage (Input to Output). NOTE:
I. FOUR LEADS; LEAD DIMENSIONS CONTROLLED
BETWEEN .050" (1.27MM) FROM THE SEATING
4S00V(peak) 3200V(RMS) PLANE AND THE END OF THE LEADS.
INFRARED EMITTING DIODE IEMITTER) DARLINGTON CONNECTED PHOTOTRANSISTOR IDETECTOR)

Forward Current IF 60 rnA Collector Current IC 100 rnA
Forward Current (peak) IF 3 A Collector·Emitter VCEO 30 V
(Pulse Width :E;; 1 IJ,S Voltage
PRR :E;; 300 pps) Emitter-Collector VECO 7 V
Reverse. Voltage VR 4 V Voltage
*Detate 1.67 mW tCahove 2SoC ambient. **Derate 2.5 mWtC above 25°C ambient.

V(BR)R@IR = 10 p.A V(BR)CEO@IC= I rnA, IF=O
VF@IF=60mA V(BR)ECO@IE=IOOp.A,IF=O
Reverse Current - - 1.0 p.A Collector Dark Current - 5 100 nA
IR@VR =3V ICEO@VCE== 10V, IF=O
.Capacitance - 30 - pF Capacitance - 5 - pF
Ci@V=O,f=IMHz Cce@VCE=SV, f= lMHz
MIN. TYP: MAX. UNITS
CTR - DC Current Transfer Ratio (IF = SmA, VCE = l.5V) H24Bl 1000 - - %
H24B2 400 - - %
VCE(sat)- Saturation Voltage - Collector to Emitter (IF = SmA, IC = 2rnA) - 0.8 1.0 V
RIO - Isolation Resistance (Input to Output Voltage = SOOVDc) t 100 - - GO
Cio - Input to Output Capacitance (Input to Output Voltage = 0,£= IMHz)t - 0.5 - pF
ton - Tum·On Time - (VCE = 10V,Ic= lOrnA, RL = 1000) - 105 - IJ,S
toff - Tum·OffTime -(VCE == lOV, Ic = lOrnA, RL = 1000) - 60 - IJ.S
ton - Tum·On Time - (VCC = SV, IF = lOrnA, RL = 1.0KO) - 10 - IJ.S
toff - Tum·OffTime -(VCC = 5V, IF = lOrnA, RL = 1.0KO) - 700 - IJ,S
tMeasured with input diode leads shorted tOl!;ether. and output

detector leads shorted together. 308
IH24B1, H24B21
10 10
I- NORMALIZED TO: - PULSED
I- IF-emA ~
PW-IOO",
IE
~ I
- ....
i
I- VeE-LSV
T,,-2S·C - PRR-IOOPPI
a /- u
--
to- IF"IOmA
/'
i
~
~ I
i ./
§ o
IF "SmA
-- IF"~mA
o
~
-
III
N
I
:::i NORMAUZED TO:
~ .0I IF-5mA r- r---
It: VCE°1.5V
o
z V PULSED I I
PW-IOO,.s
I / ~ OJ
~.OOI
PRRalOOpps
j ~A -
...t I
.000I I 0.05
I-50 -25 0 +25 +50 +75 +10 o
0.1 I 10 100
IF -INPUT CURRENT - mA TA -AMBIENT TEMPERATURE-oC
'0000 10
- --
III
IF alOmA
I--
- -
PULSED
v: IF"5mA
--- I
'1 II
/,,'"
,.,-
- III
IF"2mA
/
/ " PULSED ABOVE &OmA
PWaIOO,.s
PRR-'OOpPl
I - 1.11
IF"lmA
NORMALIZED TO:
IF"5mA
I veE "1.5V
PULSED
/ PW"IDO,.s
PRR"/OOpps
,L 0.0I0 .1 I . 10 100 1000
2 3
VF- FORWARD VOLTAGE -VOLT~ VeE-COLLECTOR TO EMITTER VOLTAGE-VOLTS
DETECTOR
10' EMITTER
r----NORMALIZEDTO:-
~ 20 r----NORMALIZED T O : -
l:
V tON VCE" IOV
/
VR =5V
:rA"25°C TA"25°C
o 10
" / /
to" 3 V
~ v ...
~
.~
~9'
~
,/
I /
NORMAUZED 10:
---
/ ' ;;-- RL-tK.Il /
o . /V I
F RL
_.lSI!
z
c
... V
z
o V / Vcc- 5V
PW- 300,., ,/ ,
,
100 tK 10K
If'i PPl
lOOK
.I
0 25 50 75 100
.1
025 50 75 100
ReLOAD RESISTANCE -OHMS TA-AMBIENT TEMPERATURE_oC TA-AMBIENT TEMPERATURE~"C
309
SOLID STATE
@ D co ELECTRONICS
'AS'. -'§' iBPW36 , BPW37
The General Electric BPW36 and BPW37 are highly sensitive NPN Planar Silicon Photo-
transistors. They are housed in a TO-l8 style hermetically sealed package with lens cap.
These devices are ideal for use in optoelectronic sensing applications where both high
sensitivity and fast switching speeds are important parameters. Generally only the collector
and emitter leads are used; a base lead is provided, however, to control sensitivity and gain
of the device.
absolute maximum ratings: (25°C.unless otherwise specified)
Voltages - Dark Characteristics
Collector to Emitter Voltage 45 volts
COLLEC,7OII
COllector to Base Voltage 45 volts CONNECTID
,,:~"
Emitter to Base Voltage 5 volts
Currents
Em
light Current IL SO rnA
.Cl
Dissipations
Power Dissipation (T A = 25° C)* PT 300 mW
INCHES MILLI M TERS NOTES
Power Dissipation (Tc = 25°C)** PT 600 mW SYMBOL
MIN. MAX. MIN. MAX.
A .225 .l55 5: I 6.47
Temperatures ct>b 016 I ~O ~~~
D .209 .230 5.31 i.84
Junction Temperature +150 °c _<l>D. .18 .19:> 4 ..52 ·.96
TJ e IDC N M 2.5 OM 2
°c OSC NOM 127 OM
Storage Temperature TSTG -65 to +150 '"
h . 30
.036 .046 92
.7'0
.. <;
I 16
k . )28 . 48 71 1.22 1
"Derate 2.4 mWtC above 25°C ambient L .500 12.7
"*Derate 4.8 mWfC above 25°C case a 45· 45" 45" 45· ~
- - - - - - - - - - - - - ..... - - - - - - - - NOTES:
1. Measured from maximum diameter of device.
electrical characteristics: (25°C unless otherwise specified)
2. Leads having maximum dicmeter .021"
(.533mm\ measured in gouging plone.054"
+.001" -.000(137 + .025-.000mm)below
BPW36 BPW37 the ref. rence plane of the device sholl be
STATIC CHARACTERISTICS MIN. MAX. within .007 "t.77Bmm) their true posit~n
MIN.
relafive to maximum width tab. •
light Current
(VCE = 5V, Ht = IOmW/cm2 ) IL 6 3 rnA
Dark Current
(VeE = 10V, H = 0) ID 100 nA
(IE = 100pA, Ic = 0, H = 0) V(BR)EBO 5 5 V
(Ic = 100pA, IE = 0, H = 0) V(BR)CBO 45 45 V
(Ic = lOrnA, H = 0) V(BR)CEO 45 45 V
Saturation Voltage
(Ic = lOrnA, IB = lmA) VCE(SAT) 0.4 V
Turn-On Time (VCE = lOY, Ic = 2rnA, ton 8 psec
Turn-Off Time RL = lOOn) toff 7 psec
tH =Radiation Flux Density. Radiation soutce is on unfiltered tungsten f"Jlament bulb at 2870 0 K color temperature.
NOTE: A GaAs source of 3.0mWjcm2 is approximately equivalent to a tungsten source, at 2870°1{, of 10 mWjcm2.
310
TYPICAL ELECTRICAL CHARACTERISTICS BPW36, BPW37
10 10
IHt.<>' ~
ffi
. /~'""
...
.n, 2 ~ a
It:
/'
,
1.0
I ~ i.oIII"" I-
15mWI :cm l '~
~ :; ~
~r/ / "'""
-
o
,,;>-'" I , J '":;
N /'"
~
_/1 L"" :tmW~cm~
<I
::;:
~ O. I
Z
,/ NORMALIZED TO
I 1
VCE =5V
.i
'j/' ~ ~ "m..'" 171 'TO
~ Ht'IOmW/cm 2
,0 I
,01
t= .1 I
VCE-COLLECTOR TO EMITTER VOLTAGE
i~l~m.w~cm2
10 100
.01
0.1
V
~
V
Ht
L
=TOTAL IR,RADIANCE IN mW/cm 2
~ 100

II) 10
'"::;:i= ........
--
10
~
"- f"""""-o.. r-...
Z
~ -
ia
"
It:
RL= I K.I}
~
V Q
Z
<I
~
l-
!2
x
V
,/
2i
'"i'- '" ~,
'" '", ""

o
oJ
~
~ 1.0 / ~ LO
f Q
oJ
<I
::;: / '":;
N ~
i'"o~
It:
~
...~
/ ~
~
NORMALIZED TO " 1"00...
.......
r-.~
RL =100.1}- - -
~
/ NORMALIZED TO
VCE=5V
Ht=IOmW/cm2
T= 25 °1
'O?
I
1
:t:
-
VCE =10 VOLTS
IL'2mA
ton stoff =Sl'sec
RL=IOr II
RL·IO.l}
O. I
...80.1
-50 o 50 100 ISO I 1.0 10 100
T-TEMPERATURE- °c IL-OUTPUT CURRENT-mA
NORMALIZED LIGHT CURRENT VS TEMPERATURE SWITCHING TIMES VS OUTPUT CURRENT
1.4
/'
~
I-
1.2 10lcJ CQXl4 BPW36 OR
~
Z
~ 1.0 .- BPW37
~
~ ............
/' ,/
~
/
~
U
I-
i3
:0
~
!::! .6
.8
NORMALIZED TO
" r-......
~
~
V NORMALIZED TO
ID@25°C
oJ
<I
::;:
~ .4
CQXI4INPUT&IOmA
VCE -10 VOLTS
IL=IOOIOA
V VCEO=IOVOLTS
. I
oJ
•2
T= 25"C
I
'0
/' 25 50 75 100 125 150
o
55 35 15 5 25 45 65 85 105
T- TEMPERATURE _oC T-TEMPERATURE-OC
DARK CURRENT VS TEMPERATURE NORMALIZED LIGHT CURRENT VS TEMPERATURE

Both Emitter (CQX14) and Detector
(BPW36 or BPW37)
at Same Temperature
311
SOLID STATE
-@ ©ELECTRONICS
-Light Detector Planar Silicon Photo-Darlington Amplifier
'%'. -'4+' BPW38
The General Electric BPW38 is a supersensitive NPN Planar Silicon Photo-
. darlington Amplifier. For many applications, only the collector and emitter
leads are. used; however, a base lead is provided to control sensitivity and the
gain of the device. The BPW38 is a TO·18 Stylf. hermetically sealed package
with lens cap and is designed to be used in opto-electronic sensing applica·
tions requiring very high sensitivity.
absolute maximum ratings: (25°e unless otherwise specified)
VOLTAGES - DARK CHARACTERISTICS ~g~'ifE~W~
Collector to Base Voltage
Emitter to Base Voltage
CURRENTS
VCEO
VCBO
VEBO
25
25
12
volts
volts
volts (2) B
@
TOCASE C (3)
EO)
light Current IL 200 mAo
DISSIPATIONS
Power DisSipation (TA =25° C)* . PT 300 mW
INCH~
MAX. ~~
Power Dissipation (Tc =25°C)**
SYMBOL MIN. . NOTES
PT 600 mW A l 5 6.47
TEMPERATURES ct>b
<1>1
.016 .021 40 !;:l3
.209 .230 5.31 5. 4
Junction Temperature 150 O.
e
.1 .19 4. 4.
.1 ONOM ~.5 M
Storage Temperature ·65 to 150 '"
h
.05 NCM
.03C
1.27N Iv!
.76
~
·Derate 2.4 mW/oC above 25°C ambient. J ·036 .046 liZ 16

k 7 t
··Derate 4.8 mW/oC above 25°C case. L .500 12.7
a 45· 45- 45· 45· ~
electrical characteristics: (25°e unless otherwise specified) NOTES:
1. Measured from maximum diameter of device.
STATIC CHARACTERISTICS MIN. MAX. 2. Leads having maximum diameter. 021 11
(.533mm1 measured in gouging plone.054"
LIGHT CURRENT +.001" -.000(137 +.o25-.000mm) below
(VCE = 5V, Ht =0.2 mW/cm 2) 3 rnA the reference plane of the device sIIoll be
within .007 "L77Bmm) their true position
DARK CURRENT relative to maximum width tab.
(VCE = l2V~ IB =0) ID 100 nA
EMITTER·BASE BREAKDOW,N VOLTAGE
(IE = l00JlA) V(BR)EBO 12 v
COLLECTOR·BASE BREAKDOWN VOLTAGE
=
(Ic 100JlA) V(BR)CBO 25 V
COLLECTOR·EMITTER BREAKDOWN
VOLTAGE j
(Ic = lOrnA) V(BR)CEO 25 V

. (see Switching Circuit)
SWITCHING SPEEDS
(VCC = lOY, IL = 10 mA, RL = lOOn)
DELAY TIME 50 Jlsec
RISE TIME 300 JlSec
STORAGE TIME· 10 Jlsec
FALL TIME· 250 Jlsec
tH = Radiation Flux Density. Radiation source is an unfiltered tungsten filament bulb at 2870 0 K color temperature.
NOTE: The 28700 K radiation is 25% effective on the photodarlington; i•.e., a GaAs source of 0.05 mW/cm 2 is equivalent to this 0.2 mW/cm 2
tungsten source.
312
BPW38
100 10
5.0mW/cm2 8
".
,,- ~
Z
6
."
4
-
IIJ
~
Z
IIJ
II::
/' 2.0 II::
II::
a 2
/'
l/~
II::
::l
o 10 / 1.0 ~
s:::i 1.0
~ .8 ./
:J: ./ .5 .6
tlI 1/ ~ .4 /'
:::i
~
".
Q
L ./ ;j /
---
IIJ .2 .2
!:::!
.J
II::
/
--
I
~ 1.0 .I
o O. I VeE·5V
II:: ~ .08 H = .2mW/cm 2
o /" N .06
/
Z /'
.05
.-' @. .04 V
/' /
I
~
~ NORMALIZED TO:
VeE = 5V - :;. .02
~ H = .2mW/cm 2
I ./ .0 I
5 10 15 20 25 30 35 -50 -25 o 25 50 75 100 125
VeE - COLLECTOR TO EMITTER - VOLTS T - TEMPERATURE -'C
1. LIGHT CURRENT VS. COLLECTOR 2. RELATIVE LIGHT CURRENT VS.

TO EMITTER VOLTAGE AMBIENT TEMPERATURE
1.0
r ""\
0.9 . 100~--+---~---+----~mr1----r--~----t---~
IIJ
~ 0.8
I \ 90~--+---~---+----r;+r~---r---+----r---~
o
/ \ ~ 80~--+---~---+----rT++~---r--~----r---~
g; 0.7
IIJ
II::
V 1\, ::l
~ 70~--+---~---+----r+++~---r--~----r---~
.J 0.6 .J
ct
II::
t; 0.5
I ~60~--+---~---+----rr+1~---r--~----r---~
ct
IIJ
11.
0.4 V \ ~ 50~--+---~---+----~+4H----r---1----r---~
~40~--+-~-r---+----H-~H----r--~----+---~
Ul
IIJ
./ V
~ 0.3
IIJ
1I::30~--+---~---+----#-+-*----r--~----+---~
ct
.J
III 0.2 \ 20~--+---~---+----~+-~---r---1----r---~
O. I 10~--+----r---+--~~+-1----r--~----t---~
o
400 500 600 700 800 900 1000 1100 1200 ~90' -70' -50' -30' -10' 10· 30' 50' 70' 90'
1\- WAVELENGTH - NANOMETERS DEGREES
3. SPECTRAL RESPONSE CURVE 4. ANGULAR RESPONSE
100
" LOAD RESISTANCE
10.1}
Vee NORMALIZED TO:
BPW38
ct
e
\ RL = 100.1}
IL = 10mA I-
~ 10 r'\. 100.1}
z '\
IIJ
II::
II:: \
::l
I ~ RL OUTPUT
0
~
:J:
\.'
tlI
:::i
\ .\ \lpOO.l}
1.0
-= ... ..J
"',\1\
5. TEST CIRCUIT 6. WAVE FORMS Vee' IOV
\~
:,
0.1 1.0
RELATIVE SWITCHING SPEED
10 100
td + tr + ta + tf
7. LIGHT CURRENT VS. RELATIVE

SWITCHING SPEED
313
SOLID. STATE
@ D © ELECTRONICS
Infrared Emitter
---'4+ 1 CQX14-CQX15-CQX16,-CQX17
G,lIium Arsenide ~nfrared-Emlttlng Diode CQX14, CQX16
The GeneraiElectric CQX14-CQXlS-CQX16-CQX17 Series are gallium arsenide,

light emitting diodes which emit non-coherent, infrared energy with a peak wave
length of 940 nanometers. They are ideally suited for use with silicon detectors.
absolute maximum ratings: (25°C unless otherwise speCified)

Voltage:
Reverse Voltage VR 3 volts
INCHES MIWMETERS
Currents: SYMBOL MIN. MAX. MIN. MAX. NOTES
Forward Current Continuous IF 100 ·mA A .255 6.47
.021 .533
"
.011 .407
Forward Current (pw 1 JJS, 200 Hz) IF 10 A ,0 .20' .uo 5031 584
,01 ,180 .187 4.57 4.77
?
Dissipations: t .IOONOM.
.050 NOM.
2.54NOM.
I.Z7NOM. 2
Ii
Power Dissipation (TA = 2S0C)* PT 170 mW h
\.7a
Power Dissipation (Tc = 2S 0C)** PT 1.3 W I
k
.031
.036 1..046
030
.044 .79
.92
1.11
1.16 I
Temperatures: ..
L 1.00
4"
Z!!,4
45" 3
~unction Temperature TJ -6SoC to +lSO°C

CQX15,CQX17
Storage Temperature Tstg -6SoC to +lS0°C SEATING
Lead Soldering Time 10 seconds at 260°C
"'Derate 1.36 mwtC above 25°C ambient.
"'Derate 10.4 mwtC above 25°C case.
electrical characteristics: (2S0C unless otherwise specified)

SYMIIOI. INCHES
MIN. MAX :~~E1f:i NOTES
A .155 ! 11.113
;b .016 .021
Reverse Leakage Current ,0 .209 .230 •407
31 1.533
f>. f>.84
(VR =3V) 10 JJA ,a, .180 .187 4.57 4.77
IR t . 100_. 2.54 NOM• 2
to .050NOM. 1.27NOM 2
Forward Voltage
1'~76
h
(IF = 100mA) VF lA 1.7 V I
k
.031
.036 1. 030
.044
.046
.79
.92
1.11
1.16 I
optical characteristics: (2S0C unless otherwise specified)

.
L 1.00
45·
211.4
45· 3
Total Power Output (note 1)

ANODE
38
o
CATHODE;
0I
(IF = lOOmA) (CONNECTED
CQXl4-CQX1S Po SA mW TO CASEI
CQXl 6-CQXl 7 1.5 mW

Peak Ermssion Wavelength of device.
(IF = 100mA) 940 nm 2. Leads having max. diameter .021"
!.533I'Am) measured in gaging plane
Spectral Shift with Temperature .28 nmtC .054" + .001" - .000 (137 + 025 -
OOOmm) below the reference plane of
Spectral Bandwidth SO% 60 nm the device shall be within .007"
(.7'78mm) their true position relative
Rise Time 0-90% of Output 1.0 JJs to II maximum width tab.
Fall Time 100-10% of Output 1.0 JJS 3. From centerline tab.
Note 1: Total power output, PO' is the total poWer radiated by the device into a solid angie of 2 11' steradians.
314
TYPICAL CHARACTERISTICS ICQX14 - COX17·1
100 1.4
50
20
10
A. .I'l.IL~EI!i
~~;~I
CURRENT I
1.2
'" t---...
""-
~
'" "'
5 ,:0
I..... 2
lL. -I- ~NTINUOUS
ORWARO
a:
;
2
0.8
~
~ I.0 CURRENT
G.
S O.!l
S
N
:::; 0.6
c
~
'"
N
:::;
c NORMALI ZED I
I 0. 2 rF"IOOmA i
~ .... 11' TA-ZS-C I
,p 0.4 ~
o.I NORMALIZED TO
........
IFolOOmA
0.05 TAO 25"C
0.2
0.02
~
0.01
.DOI .002 .D05 .01 .02 .os 0.1 0.2 0.5 1.0 2
o -25 0 25 50 T5 100 125 150
5 10
IF-FORWARD CURRENT-AMPERES TA-AMIIENT TEMPERATURE-oC

10 IDO
-
8.0
80
6.0
..
::: 2.0
4.0
- ~
- I--
;
60
40
/'
7
17
....
/'
./
/
",
./
~ '/ V /
/ 5 /
~
a
I
5a:
I.0
0.8
0.6
0.4
I
3
iji
!i...
20
10
FOIOo-C 7 50C 1-55 0
C
5 0.2
I ;
u
8
7
I I I
~
~
\.. .08
o. I
/ ~
!f 4
6
I
I
J 7
7
I I I
H .08
.04
....
I
/ I
2
.02
I
2 3 4 5 6
7 8 9 10
j
V
.. 1.0
/ 7 1.1
1.2 1.3 1.4
3. FORWARD VOLTAGE VS. FORWARD CURRENT 4. FORWARD VOLTAGE VS.

FORWARD CURRENT
100 IDO
v '\
• 0
I~ .....
80
I 1\
...!iu
...a:
G. II 0
u
~
z
a:
.. I
60
/fl \
.0 \
I
~ ..
::>
G.
r
::>
B 0
...>
~ 40 40
~
I ~
~..J ...a:
..J
...a:
20 20
V \
J ~ V
40
5.
30 '20 10 0
'-ANGULAR DISPLACEMENT FROM OPTICAL AXIS-DEGREES
COX14-COX16
TYPICAL RADIATION PATTERN
10 20 30 40
o .....
60
6.
60 40
, - ANGULAR DISPLACEMENT
CQX15-CQX17·
TYPICAL RADIATION PATTERN
20 0 20 40
FfIOM OPTICAL AXIS - DEGREES
60
'" "
60
315
SOLI 0 stATE
@ D co ELECTRONICS
Photon Coupled Isolator CQvao r-----~-.. ~
Ga As Infrared Emitting Diode & NPN Silicon
Photo-Transistor .
I~ij; II r\~
2-t--' I
6'5 \ SYIII!Ol.
MILLIMETERS
MIN. MAX.
'INCHES
MIN. MAX.
NOTES
. I I A 8.38 .18.89
The General Electric CQY80 is a gallium arsenide, infrared 3<>--t=_____ J 4 B
C -
7.62 REF.
8.64
.330:1. .350
'.300 REF.
- .340
1
2
emitting diode coupled with a silicon photo·transistor in a dual D .406 .508 .016 .020
in·line package. E . - 5.08 - .200 3
F 1.01 1.78 .040 .070
G 2.28 2.80 .090 .110
absolute maximum ratings: (25°C) H
J
-
.203
2.16
.305
-
.008
.085
.012
4
INFRARED EMITTING DIODE K 2.54 - .100 -

M - 150 - 150
N .381 - .015 -
Power DiSSipation * 100 milliwatts P - . 9.53 - .375
R 2.92 3.43 .115 .135
Forward Current (Continuous) 60 milliamps S 6.10 6.86 .240 .270
Forward Current (Peak) 3 ampere NOTES:
(Pulse width lp.sec 300 P Ps) 1. INSTALLED POSITION LEAD CENTERS.
Reverse Voltage 5 volts 2. OVERALL INSTALLED DIMENSION.
*Derate 1.33mWrC above 2S·C ambient. SEATING. PLANE.
4. FOUR PLACES.
PHOTO·TRANSISTOR TOTAL DEVICE
Power Dissipation **150 milliwatts Storage Temperature ·S5°C to +1 50°C

VCEO 32 volts Operating Temperature ·S5°C to +lQO°C
VCBO 70 volts
5 volts Lead Soldering Time (at 260°C) 10 seconds
VECO
Collector Current (Continuous) 100 milliamps Surge Isolation Voltage (Input to Output)
**Derate 2.0mWrC above 2S·C ambient. 4000VRMS
individual electricalcharacteristics:(25 °C)


(IF = lOmA) (lc = 10mA, IF = 0)
(Ic = 100 1lA, IF = 0)
(VR = 3V) (IE = 1001lA, IF = 0)
(VCE =:= lOV, IF = 0)
(V'= O,f= 1 MHz) (VCE = 10V, f= 1 MHz)
coupled electrical characteristics:(25°C)

DC Current Transfer Ratio (IF =lOmA, VCE =5 V) 60 - - %

Saturation Voltage - Collector to Emitter (IF = 10mA, Ic = 0.5mA) - 0.1 0,4 volts
Isolation Resistance (Input to Output Voltage = 500 Vnc) 100 - - gigaohms
Switching Speeds: Rise/Fall Time (VCE = 10 V, ICE = 2 mA, RL = lOOn) - 2 - microseconds
316
TYPiCAl. CHARACTERISTICS CQV80
10
-
r,.-
v t--
V
0
NOIIMALIZED TO
VcE" IOV
IF alOmA
v-
r,'-
- t--
r--
1,·-
V ~
I
-..zED TO-
r---.
'U'IOY
1,'lOmA
TA'Z5'C
.()I
I 10 100 ~
0.110
-
I 100
IF - ~T CURRENT - mA
OUTPUT CURRENT VS_ INPUT CURRENT OUTPUT CURRENT VS. TEMPERATURE
1.000
.",-
./
"" ....
100
/'
10
1
....
Z
I
10
I F·5QrM
a:
a 1.0
/ /
L..-
IF'1...I-
~Tl
i
I / 7
7
7
I---
~L
~ O. I
/
I
II-
.0I
/ NORMALIZED TO.
/
VeE-lOY
I
.5 1.0 1.5
2.0 .()I
.I I
II i'(i 10 100
VeE - COLLECTOR TO EMITTER VOLTAGE- VOLTS
100
v
V
'" --
0
I I
" l-
I'-- ~....... -t-- I-RL"KA
/
I/'
1'-" ~
......
r.... V Vee'1OY
1--. NORMAUZED TO
I-- VCE -IOVOLT5
'ao· 2mA
.......... I'-r-....
h ....._ "L·1OOQ
I
II
ton • toff • 3"". "LaIOA
I--- RL '1000
I
I I I I I
LO
I CEO - OUTPUT CuRRENT - mA
10 100
1,-- 10
Cl/lll£NT-mA
100
SWITCHING TIMES VS. OUTPUT CURRENT OUTPUT CURRENT (leBO) VS. INPUT CURRENT
317
soLID STATE
@ D co ELECTRONICS
Photon Coupled Isolator CNY17
Ga As Infrared Emitting Diode & npn Silicon Photo . Transistor
The General Electric CNY17 consists of a gallium arsenide in-
frared emitting diode coupled with a silicon photo transistor in
a dual in-line package.
FEATURES:
'iU Covered under U. L. component recognition program, reference fIle E51868
@8R3 VDE approved to 0883/6.80 0110/11.72

Power Dissipation - TA *100 milliwatts
MILLIMETERS INCHES
Forward Current (peak) 3 ampere SYMBOL ~-~
NOTES.
MIN. MAX. MIN. MAX.
(Pulse width IJ.Ls, 300 P Ps)
A
B
8.38.1 8.89
7.62 REF.
I .330 ~ I .350
.300 REF . 1
C - 8.64 - .340
*Derate 1.33 mwtC above 25°C 0 .406 .508 .016 .020
2
E - 5.08 - .200 3
F 1.01 1.78 .040 .070
G 2.28 2.80 .090 .110
H - 2.16 - .085 4
J .203 .305 .008 .012
K 2.54 - .100 -
M - 15' - 15'
PHOTO-TRANSISTOR N .381 - .015 -
P - 9.53 - .375
Power Dissipation - TA
VCEO .
·*150 milliwatts R
S
2.92
6.10
I 3.43
6.86
.115
.240
.135
.270
70 volts
NOTES:
VCBO 70 volts 1. INSTALLED POSITION LEAD CENTERS.
VECO ~
7 volts 2. OVERALL INSTALLED DIMENSION.
Collector Current (Continuous 150 milliamps 3. THESE MEASUREMENTS ARE MADE FROM THE
SEATING PLANE.
'**Derate 2.0 mwtC above 25°C 4. FOUR PLACES.
TOTAL DEVICE
Steady-State Isolation Voltage (Input to Output).
~ VDE Approved to 0883/6.80 OllOb Certificate # 35025
318
CNY17
Forward Voltage - VF .8 1.65 volts Breakdown Voltage - V(BR)CEO 70 - - volts
(IF = 60 rnA) (Ic = 10mA, IF = 0)
(Ic = 100J,LA, IF = 0)
Reverse Current - IR - 10 microamps Breakdown Voltage - V(BR)ECO 7 - - volts
(VR = 3V) (IF = 100J,LA, IF = 0)
(VCE = 10V, IF = 0)
Capacitance - CJ - 100 picofarads Capacitance - CCE - 2 - picofarads
(V = O,f = 1 MHz) (VCE = lOY, f = lMHz)
Current Transfer Ratio -hpE
(VCE = SY, Ic = 100",A) 100 - -

DC Current Transfer Ratio (IF = lOrnA, VCE = 5V) CNY17 I 40 - 80 %
CNY17 II 63 - 125 %
CNY17 III 100 - 200 %
CNY17 N 160 - 320 %
Saturation Voltage - Collector to Emitter (IF = lOrnA, Ic = 2.5mA) - - 0.3 volts
Isolation Resistance (VIO = 500VDc) (See Note 1) ·100 - - gigaohms
Input to Output Capacitance (VIO = O,f = 1 MHz) (See Note 1) - - 2 picofarads
Turn-On Time - ton (VCC = lOV, Ie = 2mA, RL = lOOn) (See Figure 1) - 5 10 microseconds
Turn-Off Time - toff (Vee = lOV, Ie = 2mA, RL = 100n) (See Figure 1) - 5 10 microseconds
Note 1: Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together and
the output tei:minals (transistor) shorted together.
r - - - - 1 . INPUT
......J L....,PULSE
~-~OUTPUT
RL
Adjust Amplitude of Input Pulse for Output lIel of 2 mA
FIGURE 1
319
CNV17 TYPICAL CHARACTERISTICS
1000
,
, .
,,
,
100 ,
~ 10
!
I
-2 ..
..........
I
o / ~ -2.2
r--....
o 1.0
I' . 1- 0
I
2
.
'-.....
,
.!to. I •
~-1. .......
r-...
I-... I--
.0 I
/ ~
-----
I -. .4
I
.000 .5
/ ID IS
VF - FORWARD VOLTAGE -.VOLTS
2D .2 '" .6.81.0
1, - FORWARD CURRENT -iliA
4 ti 810.0 20 40 eo 80 100
10'
u''''''
~E·2OV
~ 'icE" lOY
~V
""
-
I
ClV ~
--......
..
Vee" lOt
10'
'/V II 10'
1/ :7 V
,// 1/:7V
'0 '
II NORfMUztD 1'0:
Vet" lOY
Ta ••25"(;
' .. ·0 =~ i
j
10'
7. V
7
VI V/ NOFIMAUZf.OTO:
"co' lOY
l .. o+2SOC l-t- -
1.0
I ID
1/ I, -0
01 ... . ..", 0.1

... .", .,.
100
-
50
~,~---+-+----+-+---~~----~~
10
/'
lJ
I, =IOtnA
V , i -r ---
5
, , ,,-'rocit
II.
12 0
5
V ,'/ ,
ks-J
~
~ 0_ I
V
V
I
,'l/, 7' /, .-
~mA
.;
-.1---- ----
1000C r---
,,
o
J} _05
l/j."
, .- II 59-""" , I
II
j :'
I
I
.0 I , I
7 .. "'ioooc. 7 / I
.005
.... '
.00.I 01
.02
V ,/
.04.06 .06 0.1 .2
It'
.4.6.8 1.0 2.0
VCJ - COLlETOR TO EMITTER VOI,TAGE - VOLTS
320
CNY17
0 !ODD
I I
s -._TO I-
aDD
Yea 'lOY V ~
1.0
I, .IQMA
V IOD
Vea-IOY
1/ V
I s
/'
,/
10
,/
I .oa
I
V
./ /
! , .IM
/1 I
/
1.00 / /'
J ~
,-",,'
.oa l/
.000 ,/ III /'
V v
.2 A . I .. ID 24'.10 40 10.10100
/ .2 40 10 10 IOD
IF-INPUT CUllRENT-..A
7. OUTPUT CURRENT VS INPUT CURRENT. 8. OUTPUT CURRENT - COLLECTOR TO BASE

VS INPUT CURRENT
• I
-
. "'''''-1-
~..... -I-
1"'20""
•
1""0""
r-- 1.0
I"'" !,.IL-
.
1.0
..
.1
--
~'""_I-
•
I /" II
r-- .1 Ii I
•
.1 - --I--. . I I
'~"=~
I
~~
~:::' r-
.. I il
.1M - p:"...
-
1,- ,"'"
~
NCIMIAUZED TO:
~'IOV
I, -Dd
.GO
r--
T"r" ...
I. OUTPUT CURRENT VS TEMPERATURE
100
.001 10
10. OUTPUT CURRENT VS BASE EMITTER

-.
"~~IAII MIIS'IQR.q
RESISTANCE
-->-
10
8
6:---'" 110
4~ - NC)RMAUZED ton ~ 1,.-1OmA ........

'\:0'101/
~ ,
r-~'IKIl
• ""i-
--
2 r--t-<
NORMALIZED TO:
"' ,......... 'I"-
~
r.....
.......
.......
t---...
I
_.....
NORMAUztD ton FOR
-.....c...
,/
z,. 20rnA
.........
~
- -I-
- VCE '10 VOLTS

.......... ....r---..., V LV
ICEO'2mA r-.... • /'
4-
Ian '!off '3jo.
RL'IOO0
.....
r-..
RL'IOOIl - t- f;l
/NORMAUZED 1aI. I'ORl,-1OftlA R.-_8
NORMALIZED 'YO:
I I I
RL -100
I. K •
/
""""-'IJZEO'oIII'ORr,"_
1, -1OmA
ton a 'off -&,a ..
I
I
I I
..8
I 20 110 100
.2 II 1.0 2 4 6 8 10
.CEO·OUTPUT CURRENT-mA
20 40 6060 100 10
"'"
RIl - EX1!.ANAL BAlE RESlSTO.... KA
500 1000
11. SWITCHING TIMES VS OUTPUT CURRENT 12. SWITCHING TIME VS RBE
321
SOLIOSD\TE
@DcoELECTRONICS
Photon Coupled Interrupter Module CNY28
The General Electric CNY28 is a gallium arsenide infrared emitting.
diode coupled with a silicon photo-transistor in a plastic housing.
'~
2
r- ,
1I J1""'
h1
L_
,
r--- ,
L-___
Q4 1I
j
3
The gap in the housing provides a means of interrupting the signal
with tape, cards, shaft encoders, or. other opaque material,'
switching the output transistor from an "ON" into an "OFF' r.~~ I: SYMBOL
;, I
-:~M£= .:..~:.
~o J.I~~ ~:~ l:-;: NOTES
state. I.p + D At 10 3.2 .119 .125
<.;!;I E + •• ,..,. .700._ D30
III .$0 NOM. .ozo NOM.
FEATURES: o
Dt
24.3
11.1
24.7
12.0
.967
.457
.872
.472
02 3.0 13 .119 .129
• Low cost, plastic module 'I 8.. U .272 .210
•• U 2.8 .091 .110
• Non-contact Switching E
L
fllS
aDO
U5 .243
..31S
.249
T
., s..z
3'r~~'1~~
14 .IM .153
• Fast Switching speeds R
Q 18.9
1.3 NQII,
't.2 .7e .155
.051 NOM. (!,$INCH1.
• Solid state reliability RI
RI
1.3 NOM.
1.:5 NOM.
.0&1 NOlI.
·.051 NOM.
• I/O compatible with integrated circuits S ....u'.O I'IH

SI
DMU ....
S.45 17!! .147
T 2.' .1 NOM.

Storage and Operating Temperature _55° to 85°C. Lead Soldering Time (at 260°C) 10 seconds.

Power Dissipatiol\ *100 milliwatts Power Dissipation **150 milliwatts
Forward Current (Continuous) 60 milliamps Collector Current (Continuous) 100 milliamps
Forward Current 1 amp VCEO 30 volts
(peak, 100llS, 1 % duty cycle) VECO 5 volts
*Derate 1.67mW/"C above 25°C ambient **Derate 2.5mW/oC above 25°C ambient

INFRARED EMITTING DIOD,E TVP. MAX. UNITS PHOTO-TRANSISTOR MIN. MAX. UNITS
Forward Voltage 1.2 1.7 volts Breakdown Voltage

V(BR)CEO (IC = 10 rnA)
30 - volts
(IF = 10 rnA) -
Reverse Current - 10 ,uamps Breakdown Voltage 5 - volts
(VR = 2V) V(BR)ECO (IE = JOOJ,LA)
Capacitance 150 - pf Collector Dark Current - 100 nA

(V = 0, f = 1 Mhz) leEO (VCE =10V, IF = 0, H=O)

Output Currerit (IF = 20mA, VCE = 10V) 200 400 - J,Lamps
Saturation Voltage (IF = 20mA, IC = 25J,LA) - 0.2 0.4 volts
Switching Speeds (VCE = 10V,IC = 2mA, RL = 100SJ)
On Time (td + t r ) - 5 - J,Lsec
Off Time (ts + tf)
- - 5 - J,Lsec
322
ICNY2S\
-
10 10
8 8 ~'NORMALIZED TO VCE'" 5V, IF "20 mA,TA"25·C
6 ..,.....,... ~
I- 4
6 r--. INPUT PULSED IF _ 100 mA I--
...
-
Z I- I--
Z
".
a: l/ ~ 4
--
I F -60mA-
\!i 2 a:
o
I-
( I
V :;)
o
I- 2
~
r-
--
.8 / ( IF -30 mA
I- .6 NORMALIZED TO'
:;)
.r I-
~
o
...
o
.4 IF = 20mA 5 I I~~ r--
:I« .2
V VCE =5V
PULSED
o
'...N .8
/ PW=IOg: ::i .6
«
-
---
::E PRR=IO pps
IF"IOmA
.I
~
z
.!-.
.08
.06
/ l .4
~
1 I
- N-t--
j .04 c:
...u o
-
- .02 / iii
.!t /""
I F "5 mA
/
I I
.0 I 2 4 6 8 10 20 40 60 80 100 ,200 400 600 1000 -55 -40 -20 0 20 40 60 80 100
1"..INPUT CURRENT-mA TA-AMBIENT TEMPERATURE-·C
3~----~----~-----r----~----~r-----~--~
D£1ECTOR EMITTER
103
/ 103
NORMALIZED TO-
l-
~"~'T
i
2 =25·C I-
IF 30mA A ...a:
Z V/
...
~
0
PULSED "," ~
§ 102 010 2
.~ .~- t--
N PW=IOO,.s,PRR=IOO pps
::; o
«
::E ~
~CJ <.'" ~
a:
0 ~ V lO:
~
./
~ fil 10 I L / ..J
I /
..:
iii
g N
:::;
«
, 0
~
10
.."
/ 1/
i
u :I
> ./
.8
1----=3:::_.-.:=J-----+-----I-----~ • ~
ib IV 1/
t----1 ... , --
.6
IF 15mA
...
u
/
NORMALIZED TO-
VCE =25V .2'
NORMALIZED TO- I--
VR =5V I--
I
TA~25.~ I I
- r--TA =25°C
I I
-50 -25 o 25 50 15 100 +25 +50 +15 +100 +25 +50 +15 +100
TA -AMBIENT TEMPERATURE-"C TA-AMBIENT TEMPERATURE-·C TA-AMBIENT TEMPERATURE-·C
3. VCE(sat) VS. TEMPERATURE 4. LEAKAGE CURRENTS VS. TEMPERATURE
d-DISTANCE-mils
181 1515 2362 315 3937'
4.5
4 /
1.00
/ ,
VI
:I
i5 3
VCC' 5V,
15
IF"~ A
. . .V I-
...a:
Z I
V I I
lO:
III
PYJ'300,.s tON t~ V !5o I
N NORMALIZED
~ 2 PRR'loopps // I-
~
I TO VALUE WITH
l ~~~l;eED
...
~ ".".
0 NORMALIZED TO I- '
N
::;
RL=2.5KA 5 BLACK
SHIELD
1.5 ~ .01
~loIIEf'Wlo
«
:I
a:
0
/
V ~
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-0
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SHIELD
z
......
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I
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./
RL -
j " .001
,nn, :
z L o
D~G;=
«
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!l
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.5
../'
A5 I I I I J .000I0
IK 2K 3K 4K 5K 6K 1K 8K 9K 10K 2 4 6 8 10
323
SOLID STATE
@D co ELECTRONICS
The General Electric CNY29 is gallium arsenide infrared emitting
diode coupled with a silicon photo-darlington in a plastic housing.
The. gap in the housing provides a means of interrupting' the
signal with tape, cards, shaft encoders,or other opaque material,
sWitching the output transistor from an "ON" into an "OFF"
state.
FEATURES:
•
•
Low cost, plastic module
Non-contact Switching
'TI ~'4 ~-F1
.
r'" ,
I
I
! :"':
I I
I'
,..--- ,
, "'"
I
I
1.._-.1';'++
@ E
"
D
+ +
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SECT ....
~.
'1~
~.!.,
x.~:r
~£.., ""OFl.,
S'tIIIIOL
~ :, ~~ J'i~.At
..
II,
o
, 0,
MtL~IIII!:TE'"
3.0
._
24.S
II..
s.o
3.2
.SO NOlI.
24.7
IZ.o
':"'NCHESIMX. NOTES
~.~'J.~:
.119
.7110.024 1»0
.oto NOM.
. •7,72
.457 .472
.121
3
~ oJI
01 5.J .11' .12t
• .Solid-state reliability .....;.J L. __ ~'.T . e.
_. ...
2.1
7.5
2.8
.212 .Z.
.011 .110
• I/O compatible with integrated circuits ,2 3.. . L~ 1 E
L
I.IS
8.00
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.31S
r
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..., .~
~ ..
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...
Q
ft
H,
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5.2
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I.S NOM.
I.S NOM.
14
' ..2
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.7'45 .7•
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.051 NOM.
.051 NOlI.
........ -"" ......... S
s, .8511.0
14!S 5:'5
.o34 l.o
,,13& ••
.147
T 2.. M. .10 NOM.
absolute maximum ratings: (25°C) (lUlless otherwise

. ' .
specified) ,
Storage and Operating Temperature _55° to 85°C. Lead Soldering Time (at 260°C) 10 seconds .
INFRARED EMITTING DIODE .PHOTO-DARLINGTON

Power-Dissipation *100 milliwatts Power Dissipation **150 milliwatts
Forward Current 1 amp VCEO 25 volts
(peak, 100 ~s, 1% duty cycle) VECO 7 volts
Reverse Vo)tage 3 volts
*Derate 1.67mWrC above 25°C ambient **Derate 2.5mWrC above 25°C.ambient

INFRARED EMITTING DIODE TYP. MAX. ~UNITS PHOTO-DAR LlNGTON MIN. MAX. UNITS
Forward Voltage 1.2 1.7 volts Breakdown Voltage 25 - volts
OF= lOrnA) V(BR)CEO (Ie = lOrnA)
Reverse Current - 10 , pamps Breakdown Voltage 7 - volts
(VR = 2V) V(BR)ECO (IE = 100~a)
(V = 0, f = 1 MHz) IcEO (VCE= 10V, Ip=O, H=O)

Output Current (IF = 2OrnA, VCE = 5V) 2500 - - ~amps
Saturation Voltage OF = 20mA, IC = 0.5 rnA) - - 1.2 volts
Switching Speeds (VCE = 10V, IC = 2 rnA, RL" lOOn)
On Time (td + t r) - 150 - ~secs
Off Time (t s + tf)

" - 150 - ~secs
324
ICNY291
100 100
18
40
NORMALIZED TO
....z _t"'"
I-
Z
"cE"1.5V, IF " 5mA, TA=25"C
....II: 20 .... INPUT PULSED
,.i,....--' i-"" II:
II:
I.J
l-
:;) 10
B
S
./
II:
:;)
I.J
I- 10
IF "IOOmA
..,.
4 :;)
~ IF"IiO~A _
..-- -
IL
I- ~ I-
:;) 2 :;)
0
NORMALIZED TO' 0 IF"30 mA
./
IF"~
I
....Q .B IF "5mA ....NQ
!::! .6 VCE "1.5V :J
-
..J
.4 ./
'"
::Ii
II:
0 .2
/ PULSED
PW'IOO,.. •
'"
::Ii
II:
0
IF"IO;;;r-
zI / PRR"IOO pps Z
I
~
" :81 /
..!!
OJ
.04 OJ
_I.>
"
..!!
IF"5 mA
I
.02 IF"29-
2 4 S B 10 20 40 6080100 200 400 6DO 1000

0.1
-50 -25 0 +25 +50 +75 +100
IF'"INPUT CURRENT-mA T,,-AMBIENT TEMPERATURE-OC
1. OUTPUT CURRENT V8. INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE
DETECTOR EMITTER
I
NORMALIZED TO' I I ./
.!l;,. I.BmA ,TA=250C 104
~
~
NORMALIZED TO:
2
IF 10 mA
I- r-- VCE"25V /
' - - IC • 50mA PULSED ....Z r-- TA =25°C
IF 60M\.
PW'IOO I's,PRR=IOO pps II: 103 /
....NQ
:J
-- II:
:;)
I.J
"
II:
C§
~~
.y .t'(J
~6-.).o/
i
102
f= NORMALIZED TO: ==
O.B ~_3./mA ....Q
N
1 II
r-- VR=5V
:2
I
IF - 20 mA r--- IC I.B t.A IC 0.9-;:::A :::i r-- TA = 25°C
~ t--- iF = IOmA iF= 5 mA '"
::Ii 10
/ ./"
~
II:
0.6 0
Z
I / ./'
....0I.J I' / 1./
0.4 101
-50 -25 o 25 50 75 100 O.l2!i 50 75 100 O'b 50 75 100

TC-AMBIENT TEMPERATURE-OC TA-AMBIENT TEMPERATURE-oC TA-AMBIENT TEMPERATURE-oC
d-DISTANCE-mils
4 7B7 1575 2362 315 3937
IF
I I ,I
RL
I-
1.00
, /
I
]~G:
~
2 ....Z /
II:
Q
....N
II:
:;)
I.J
I I L
NORMALIZED
:J
I r--
PW' 300 I's
PRR -100 pps ~ I-
~
TO VALUE WITH
SHIELD
'"
::Ii
~
.B r - - rF" 7.5 AMPS,Vcc" 5 V
RL
V/
f?' I-
:;)
0
1 BLACK
SHIELD
REMOVED
.6 r - - NORMALIZED TO • - ....NQ .0
~loIlEr1~lo
~/ V
IL
I -d
_I!i RL -7500
~ BLACK
:::; 1-' -0
SHIELD
Q .4 i
z
,
~~
'"~~ !5
.00I
~d 0_
.2 ";;:;0
~ /'"
.!'
0. I 1 ~ .000 I0
2 4 S B 100 200 400 6D07~ 1000 1500 2 4 6 8 10
75
325
SOLID STATE
@ 0
I
CO ELECTRONICS
Photon Coupled IsolatorCNY30-CNY34 ~ MILLIMETERS INCHES
SYMBOl NOTES
MIN. MAX. MIN. MAX.
G8 As Infrared EmittiJl.g Diode & Light Activated SCR .' .. A 8.36 _I 8.89 .330 J .350
8 7.62 REF. .300 REF. 1
. The General Electric 0030 and CNY34 consist of a gallium
arsenide, infrared e~tting diode coupled with a light activated
silicon controlled rectifier in a dual in-line package.
SEATING
PLANE
JLr~ ~:1
--r=" NIT -
1- A-I .
_
C
0
E
F
G
-
-
.406
1.01
2.28
8.64 1
5.08
1.78
2.80
-
.508 ; .016
-
.040
.090
·.340
.020
.200
.070
.110
2
absolute maximum ratings: (25°C) I· I 3 1. t H - 2.16 - .085

.012
4

B
M
C (TOP VIEW)
114 6
S
~
J
K
M
.203
2.54
-
.305
-
15"
.008
.100
- -
15"
mil
Power Dissipation (-55°C to 50°C) *100 .milliwatts N .381 - .015 -
P - 9.53 - .375 .
Forward Current (Continuous) 60 milliamps \ ----1::1 f- -1 f-
H F R 2.92 I 3.43 .115 .135
(-SSOC to 50°C)
Forward Current (Peak) (-SSOC to SO°C) 1 ampere 'Diff6
2
r
I
- " t
I P-t R I
5~.,
I. NOTES:
S 6.10 6.86 .240

.270
(1001lS 1% duty cycle)

. Reverse Voltage (-SSOC to SO°C) 6 volts 3t__ I 4
I
...1 G- -11-I' 0 2. OVERALL INSTALLED DIMENSION.
SEATING PLANE.. 4. FOUR PLACES.
*Del'ate 2.0mW/oC above 50°C.
TOTAL DEVICE
PHOTO-SCR Storage Temperature Range -SSoC to lS0°C
Off-State and Reverse Voltage CNY30 200 volts Operating Temperature Range -SSoC to 100°C
(-SSOCto 100°C) CNY34 400 volts Normal Temperature Range (No Derating) -SSoC to 80°C
Peak Reverse Gate Voltage (-SSOC to SOo C) 6 volts Soldering Temperature (10 seconds) 260°C
Direct On-State Current (-SSOC to 50°C) 300 milliamps Total Device Dissipation (-SSoC to SO°C), 4S0 milliwatts
Surge (non-rep) On-State Current 10 amps
Linear Derating Factor (above SO°C), 9.OmWrC
(-SSOC to SO°C)
Peak Gate Current (_55°C toSO°C) 10 milliamps
2S00V(peak) 1770V(RMS)
Output Pow~r Dissipation.
(-SSOC to SO°C)** Steady-State Isolation Voltage (Input to Output).
400 milliwatts
**Del'ate 8mWtC.above SOOc~ lS00V(peak) 1060V(RMS)
individual electrical characteristics (25°C) (unless otherwise specified) .

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTo-seR MIN. MAX. UNITS
Forward Voltage VF 1.1 I.S volts Peak Off-State Voltage-VnM CNY30 200 - volts
(IF = 10mA) (Ro~ = 10KO, TA = 100°C) CNY34 400 - volts
Peak Reverse Voltage-VRM CNY30 200 - volts
(TA= 100°C) CNY34 400 - volts
On-State Voltage-VT 1.3 volts
Reverse Current IR - 10 micro amps (IT = 30OmA)
(VR= 3V) Off-State Current-In CNY30 SO microamps
(Vn =200V, TA =100°C,IF=0,Ro~=lOK)
Off-State Current-In CNY34 ISO microamps
(Vn=400V, TA =loo°C,I F =O,RoK=10K)
Capacitance SO - picofarads Reverse Current-IR CNY30 SO microamps
(V= O,f= 1 MHz) (VR =200V, TA = 100°C, IF = 0)
Reverse Current-IR CNY34 ISO microamps
(VR =400V, TA = 100°C, IF :0 0)

MIN. MAX. UNITS
Input Current to Trigger VAK = SOY, ROK = IOKn 1FT - 20 milliamps
VAK = 100V, RoK = 27Kn 1FT - 11 milliamps
Isolation Resistance . VIO =SOOVnc rIO 100 - gigaohms
Turn-On Time - VAK = SOY, IF = 30mA, RoK= 10KO, RL = 2000 ton - SO microseconds
Coupled dv/dt', Input to Output (See Figure 13) SOO - volts microsec
Input to Output Capacitance (VIO = O,f= 1 MHz) - 2 - picofarads
~.VDE Approved to 0883/6.80 0110b Certificate :# 3S02S
326
TYPICAL CHARACTERISTICS ICNY30 • CNY34 I
2
NORMALIZED TO
YAM -SOY
. . . . KlK
T. -2S·C .=f=
Kl
6
"GK ·.00.n.
4
RGK -3001\, 'K
5
OK
, .
- '" •
,
.8
KlK
27K
.. 27K
,.;. ......... 4
--
,.;.
.........:
J
.. NORMALIZED 10
10 50 100 200 400 YAK-!50V
VAK -ANODE TO CATHODE VOLTAGE-VOLTS RGK alOK
TA "~·C
.I
-60 -40 -20 o 20 40 60 eo 100 120
TA ~AMBIENT TEMPERATURE·ec
VS. ANODE-CATHODE VOLTAGE
VS. TEMPERATURE
'00 NORMALIZED TO
VAK -!SOY
RGK -tOK
0
T -'5"<:
........
0
r- Or.. • ooo.n
"
-
00
6 ""'-
'K
•
•~
NORMALIZED TO
YAK-SOY 'i"-
2
RGK-IOK ..........
TA -25-<:
L "~ ......... ,..... KlK
~ ..
.8
....... ;-..... 7.
............
~
.. •r-
••
..
J
• • • 00 20 40 80 KJO 200 400 KJOO
PULSE WtDTH -MICRO SB:ONDS
I
VS. PULSE WIDTH
-40 -2 0
•
fA-AMBIENT TEMPERATURE--C
•
FIGURE 3. INPUT CURRENT TO TRIGGER J I I I j
;100
24
2.
I
• 00
I
I: \
,
\ VAK· !50YOLTS
ton ·'d +h
'r=-I p. '
I,
i,
...1M
! ,.
,.
r\
., "G.". \ .
- _ .. Q 1
I
~ 10
.' . ~
~ ~.
•••
" ---- --
i'-...
.01
I
• - I
O~ W 2~
10 20 30 40 50 70 10 90 KJO v,,-FIIRWMO-WLTAGE-WLTS
IF -INPUT CURRENT - MLLIAMPERES
FIGURE 5. TURN-ON TIME VS. INPUT CURRENT IF VS. VF
327
I CNY30 .. CNY341 TYPICAL CHARACTERISTICS OF OUTPUT (SCR)
1000
&00 .~ NOTE: UlLEAD TEMPERATURE MEASURED AT THE WIDEST PORTION
OF .THE SCR ANODE LEAD
0 .. 400 l= t2} AM8ftNT TEMPERATURE MEASUREO AT A POINT
- r I-- l/2°O FROM THE OE~tCE TO''::~:CT,"""

"me. sOO..... ~200
.1-- .:. '~i~O~-""
l! 100
or-
100
!
1..40
60
P20
- - t-......
r::: t--... 1'--1'-- ~
!
i•
10
4
........ k-
27. ,1/ "

2 \I
0
"40 "20 o 20 40
r-
56.
VAK"'50V
60
- 60
t--
100
IMPEDANCE
TA -AMBIENT TEMPERATURE-·C

VS. TEMPERATURE
100
~,
10,000
5000
90
\,,\,
\,\
NORMALIZED TO 80
VAK ·SOV ~ I'
..
~ 1000
TA ·2S·C
J ~70
I
1\'
10
...~
:>
!c \\ \ '
... 60
\ ~\ \ ~
500 :
f f :. '\
J
OJ
1/
1\\ \ ",
" : 50
IIi! / J 140
\\ 1\ '~
100
.Il? ~ !.ANODE LEAD TEMP
1\ ,
DC CURRENT
Iil 50 :.30
N
::; If f :> AMBIENT TEMP~ , I'
iI HALF-81NE WAVE",
i9 i20 AVO
I0
400\1 II 10, 10
\ \ . \ ' ...
AMB TEMPi
'\
ANODE LEAD TEMP

OCCURRENT 112 SINE WAVE AVERAGE
5
0.2 0.4 0.6 0.8 1.0
I ON STATE CURRENT - AMPERES
I
V
25 50 75 100
FIGURE 10. ON-STATE CURRENT VS.
lA-AMBIENT TEMPERATURE-·C MAXIMUM ALLOWABLE TEMPERATURE
FIGURE 9. OFF-STATE FORWARD
a 2
J~
100
500 I
..... .1
U
.........
~
a
-......, .....
r--....... I
.11
.4
~
A•••300 .....~ l=- ::l
I"-
..
0:
OJ
Z
c
.2
.........
~
I0 .I .,
""
I ........... .0
~ .0 II
a ~ JUNCT10N TEMPERATURE ·2S·C
a
0:
.04
5
......
OJ
~. I-IJUJCTI~N ~E!PEtT~REI. I~'C
"'
i'.. "' ......... .........
IiiI .0 2
..... ~
.0
~ l'-.. ~o.oI
......
10 I--
.5
.....
.........
.......
.............27•
... " '.~
- INCREASES TO FORWARD
BREA.OYER VOLTAGE
~56. o 1.0 2.0 3.0 4.0
50 75 100
v T-ON-STATE VOLTAGE -VOLTS
TA-AMBIENT T~TURE--C
FIGURE 12. ON·STATE

FIGURE 11. dv/dt VS. TEMPERATURE CHARACTER ISTICS
328
I
CNY30 • CNY341
10A, T2 L COMPATIBLE, SOLID STATE RELAY.
Use of the CNY34 for high sensitivity, 2500V iso-

lation capability, provides this highly reliable solid
state relay design, This design is compatible with
74, 74S and 74H series T2L logic systems inputs
and 220V AC loads up to lOA. IN50eO(4)
INDICATOR.
25W LOGIC INDICATOR LAMP DRIVER LAMP

of the device allow it to directly couple, without buffers, T2 L
5t~ ~;r~~~--'
LOGIC
INPUT
: :
L _______ J
:
IOO.t\.
220VAC
of introducing noise and logic glitches. O.I}lF
56K
~--~~--------~

CNY34-
Use of the high voltage PNP portion of the CNY34!provides a 400V transistor
capable of conducting positive and negative signals with current transfer
ratios of over 1%. This function is useful in remote instrumentation, high
INP~ rl~-t-lo~PUT
L _______ J
voltage power supplies and test equipment. Care _should be taken not to ex-
ceed the CNY34 400 mW power dissipation rating when used at high voltages.
FIGURE 13
COUPLED dv/dt - TEST CIRCUIT
Vp = 800 Volts
tp =.010 Seconds
f = 25 Hertz CNY30
OR
f T---
TA = 250C
~~----~
CNY34
.------
Vp
l·6jVp
RAMP GEN.
329
SOLID STATE
-@ D co ELECTRONICS
Photon Coupled Isolator CNY31 '~r'r~--"j' ,'
l l~
Itt.
, t· J L __
Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier • ,3
The General Electric CNY31 is a gallium arsenide, infrared emit-

ting diode coupled with silicon photo~darlington amplifier in a
low cost plastic package with lead spacing, compatible to dual
in-line package.
SYMBOl INCHES MILLIMETERS

MIN. MAX. MIN. MAX. NOTES
absolute maximum ratings: (25°C) A .350 111·89
•• Df
.124 . 3
.020 NOM.
.60(1
.50
.75
NOM .
1
1
INFRARED EMITTING DIODE 19.52 SEATING
,'<:110. 1 .>::4 111.0
Power Dissipation *100 milliwatts "
82
E
.090 .11
.250
2.29 2.79
6.3:>
PLANE
L
Forward Current (Continuous) 60 milliamps L .300 7.62 1
Forward Current (Peak) 3 ampere
R
S
51
.050 NOM.
.0>::0 .030 .50
020 . 3
1.27 NOM.
.5
.76
.76 ., !
(l>ulse width 1 Jlsec 300 pps) NOTE:
Reverse Voltage 3 volts 1. FOUR LEAOS; LEAO DIMENSIONS CONTROLLED
BETWEEN .050" 11.27 MM) FROM THE SEATING
PLANE AND THE END OF THE LEADS.
*Derate 1.67 mWrC above 25°C ambient.
TOTAL DEVICE
PHOTO-DAR LlNGTON Operating Temperature -55 to 85°C
Power Dissipation **150 milliwatts Lead Soldering Time (at 260°C) 10 seconds
VCEO 30 volts Surge Isolation Voltage (Input to Output).
**Derate 2.5 mW/oC above 25°C ambient. 3500V(peak) 25OOV(RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-DAR LlNGTON MIN. TYP. MAX UNITS
Forward Voltage 1.1 1.7 volts Breakdown Voltage - V(BR)CEO 30 - - volts "
(IF = lOrnA) (Ic =lOrnA, IF =0)
Breakdown Voltage - V(BR)ECO 7 - - volts
•
Reverse Current - 10 microamps (IE = lOOJlA, IF = 0)
(VR = 3V) Collector Dark Current - ICEO - 5 100 nanoamps
(VCE = lOV, IF = 0)
(V= O,f= 1 MHz) (VeE = lOY, f= 1 MHz)
coupled electrical characteristics (25.o C)

MIN. TVP. MAX. UNITS
DC Current Transfer Ratio (IF = 5 mA, VCE = 5V) 400 - - %

Saturation Voltage - Collector to Emitter (IF = 5 rnA, Ie = 2 rnA) - 0.8 1.4 volts
Isolation Resistance (Input to Output Voltage = 500VD c) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f = I MHz) - - 2 picofarad's
Switching Speeds: Turn-On Time - (VCE = 10V, Ie = lOrnA, RL = lOOn) - 125 - microseconds
Turn-Off Time - (VCE = lOY, Ie = lOrnA, RL = lOOn) - 100 - microseconds
330
I CNV31 I
10 10
I- NORMALIZED TO: - PULSED
I-
r- IF"SmA - PW-IOO}' •
PRR"1Q01iPs
!Zl&J i-" ffi I-
VCE"I.5V
T."25°C
-
~
I
~
a 1/ U
IF"IOmA
I-
K V
/' I-
~ - I
g I
6
co - IF -5mA
--- IF"~mA
co III
- r--
l&J N
N
NORMALIZED TO: :::i
~ .0I IF"5mA cr
~
::;; VCE"I.5V
II:
o / PULSED
z PW=IOO}'s I
I J PRR=IOOpps ~ O.I
i' OOI ~A r--
sa
......
\oj
.000I
j
0.03 I
-
I-50 -25 0 +25 +50 +75 +10 o
0.1 I 10 100 -55
IF - INPUT CURRENT - mA TA -AMBIENT TEMPERATURE-"C
'DODO 10
--
I- I II
Z
VI III IF "IOmA
.~ It: L--
~'OOO
- --
PULSED
i3 r- Io--
IFI"~~A
~ , _... ..- --- I- I
I-
Z
~
II:
::.
'00
.,..,....
K
~co
III
- IF 82mA
III
-
u N
:::;
" IF'"I~~
co
II:
;
II: /
/ PULSED ABOVE SOmA
PW= 100}'s
PRR,'OOpps
i o.
z
I
NORMALIZED TO:
~ 10
! IF"5mA
......
I
/ J VCE"I.5V
PULSED
/ PW"100,.s
PRR=IOOpps
,I 0.0I0 .1 I 10 100 1000
2 3
VF- FORWARD VOLTAGE -VOLT!; VeE-COLLECTOR TO EMITTER VOLTAGE-VOLTS
DETECTOR
lOS EMITTER
VI 20 f---NORMALIZED T O : - f---NORMALIZEDTO:-
:e
:r
'I tON VCE" 10V VR =5V
..
0'0
0'
f
1- 10
ffi
It:
:rA"25°C /
/
TA"25°C
~ It:
co tOFF a,D 3
I:l
~
~ ~
~
::i
«
,/
~
.~
::!! I~~
:;::102
~
V
i NORMAL'ZED m:
N
~ /
ito :e
... V RL"IKG
.~
It: 10
~
/
/'" /' I
--
co F RL
z I
/
~V ......
cr VCc:~5V o
..
rrr
z PW= 300},s u I I
o
.,...- PP
'
I
.I .1
025
100 IK 10K lOOK 50 75 100 50 75 100
ReLOAD RESISTANCE -OHMS TA-AMBIENT TEMPERATURE-oc TA-AMBIENT TEMPERATURE-OC
331
SOLID .STATE
@ © ELECTRONICS
Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistors
The General Electric CNY32 is a gallium arsenide, infrared emit-
ting diode cOupled. with a' silicon photo transistor in a low cost
plastic package with lead spacing, compatible to dual in-line
package. SYM"'"
INCHES MILLIMETERS
NOTES
MIN. MAX. MIN. MAX.
A .350 8.89
.024 . 3 .6 0 .75~ 1
bl .020 NOM. .50 N M. 1
absolute I'!laximum ratings: (25°C) 8, .~15 7.24
I·<!I:I 18 . SEATING
82 .090 .110 2.29 2.79 PLANE
INFRARED EMITTING DIODE E .25 6.35
L .300 7.62 1 L
R .050 NOM. 1.27
Power Dissipation *100
!
milliwatts NOM.
Forward Current (Continuous) 60 Milliamps

S
, .020 .03 ' .5C
o 0 .030 .50
.76
.7tl
., 82
NOTE:
Forward Current (peak) 3 ampere 1. FOUR LEADS; LEAD DIMENSIONS CONTROLLED
BETWEEN .050" 11.27 MMI FROM THE SEATING
(pulse width lllsec 300 pps) PLANE AND THE END OF THE LEADS.
"'Derate 1.67 mW/oabove 25°C ambient.
TOTAL DEVICE
PHOTO-TRANSISTOR Operating Temperature -55 to 85°C
Power Dissipation **150 milliwatts Lead Soldering Time (at 260°C) 10 seconds
VCEO 30 vcilts Surge Isolation Voltage (Input to Output)
"''''Derate 2.5 mWtC above 25°C ambient. 3500V(peak) . 2500V(RMS)

Forward Voltage 1.1 1.7 volts Breakdown Voltage...;... V(BR)CEO 30 - - volts
(IF = IOmA) (Ic ::= lOrnA, IF = 0).
Breakdown Voltage - V(BR)ECO 5 - - volts
Reverse Current - 10 micoramps (IE = 1001lA, IF = 0)
(VR = 3V) Collector Dark Current - ICEO - 5 100 nanoamps
(VCE = IOV, IF = 0)
Capacitance Capacitance - 3.5 - picofarads
(V = O,f = 1 MHz) 50 - picofarads (VCE = lOY, f= 1 MHz)

DC Current Transfer Ratio (IF = lOrnA, VCE = 10V) 20 - - %
Saturation Voltage - Collector to Emitter (IF = 1OrnA, Ic = O.5mA) - 0.2 0.4 volts
" Isolation Resistance (Input to Output Voltage = 500Vo c) 160 - - gigaohms
. Input to Output Capacitance (Input to Output Voltage = O,f = 1 MHz) - - 2 picofarads
Switching Speeds: Turn-On Time - (VCE = lOY, ICE = 2mA, R L = lOOn) - 3 - microseconds
Tum-Off Time - (VCE = lOY, ICE = 2mA, RL = lOOn) - 3 - microseconds
332
ICNY32 I
100 10
r--
f--
f--
NORMALIZED TO:
IF"IOmA
VcEolIV -
" - PULSED
r-
PWOIOOS;S
PRR=IO pps
TA=211°C
I
I
...,.., -- I
...
-
IF"20mA
IF;IOmA
IF "limA
./
V NORMALIZED TO:
.1 X,'lOmA t--
VCE'5V
PULSED IF=2mA
PW"IOOl's
I PRR"IOOppl I
r--
I
.00I I 10 100 1000
0.03 ,-!SO -215 0 +215 +110 +75 +10o
I -INPUT CURRENT - mA
-515
'10000 10
I - - NORMALIZED TO:
IF"IOmA
IF o 60mA J.J..--
I--
'"
II! PULSED t--
VCE=IIV
V ~F"20m~ l -
~1000
- - PULSED
, / I--" V V ~
~
~
I
....... -
...
--- II--
PW-IOO,.s
PRR"IOOPPS
L IF"lImA
Z IV ........... ~
11 I~ .....
III ","
~
iF"21~
",
100
:;)
U fo-
"
j'J
Q
II:
~
/ PULSED ABOVE SOmA
pW= 100,.s .1
~ / PRR-IOOpPS
10
rl
..
I
IL
/
I
V VI)
III
2 3
I J V VI 0.1 10 100
VF-fORWARD VOLTAGE-VOLTS VCE -COLLECTOR TO EMITTER VOLTAGE-VOLTS
105
ETECTOR EMITTER
r----NORMAL~EDTO:---- ~NORMAUZEDTO:------
~20
:E: V tON VCE"IO V VR"5V
TA=25°C
o TA ° 25°C
" 10 /
Q
~ tOFF
Q V L
~ V
III
~
...J V
« -p~
::Ii 2
II:
o / ~t.~
Z
.. ~
I
./ ~
~
NORMALIZED TO
RL=IOK.n
IF=IOOA
/
IL
........... --
o
z
«
..0
z 0 ~
RL
Vcc=5V
PW=300,.s
rrrpps
11/
/
I""""" --
I OJ o.1
IK 10K lOOK IOOOK 25 50 75 100 25 50 75 100
RL-LOAD RESISTANCE -OHMS TA- AMBIENT TEMPERATURE _·C TA -AMBIENT TEMPERATURE-oC
5. SWITCHING SPEED VS. R L 6. LEAKAGE CURRENTS VS. TEMPERATURE
333
SOLID STATE
@ D co ELECTRONICS
Ga As Infrared Emitting Diode & NPN Silicon High Voltage Photo-Transistor MI,LLIMETERS INCHES
NOTES
.:
SVMIIOl
~:n-4±-~
MIN. MAX. MIN. MAX.
The General Electric CNY33 is a gallium arsenide, infrared emit- A
6
8.38 _I. 8.89
7.62 REF.
I . .330.300,I REF..350 1
ting diode coupled with silicon high voltage photo-transistors in I I C - 8.64 - .340 2
a dual in-line pacIalge. SEATING 30--1--. 4 D .406 .508 .016 .020
i:rN9-~N1 -A~I
E - 5.06 - .200 3
£]1 F 1.01 1.78 .040 .070

absolute maximum ratings: (25°C) 'T- 1"1 LI__ G 2.28 2.80 .090 .110
~----..,.----'--------,
H - 2.16 - .085 4
INFRARED EMITTING DiODE B

3
C (TOP VIEW)
1. t S
J
K
.203
2.54
.305
-
.006
.100
.012
-
M - 15" - 15"
Power Dissipation *100 milliwatts M ]4 6 ~ Np .015
-
.381
-
.375
-
9.53
-
R .115 .135
2.92 3.43
Forward Current (Continuous) 60 Jnilliamps \"" I_'H'- 'Ff-
3 S .240 6.10
.270 6.86
Forward Current (Pe.ak) ampere ~ -L1 r -, I
(Pulse width 1 J,lSec 300pps) - IR 'I I I
NOTES:
Reverse Voltage •
6 "olts 1 t 2. OVERALL INSTALLED DIMENSION.
I,
___m_t_e_l._33_m_w_'_0_C_ab_o_v_e_2s_0_C_a_m_bl_'en_~_'____________~
.._______.De G- I' SEATING PLANE.
--II-D 4. FOUR PLACES.
PHOTO-TRANSISTOR TOTAL DEVICE,
Power Dissipation **300 milliwatts Storage Temperature -55 to 150°C

VCEO 300 volts Operating Temperature -55 to 100°C
VCBO 300 volts lead Soldering Time (at 260°C) 10 seconds.
VEBO 7 volts Surge Isolation Voltage (Input to.Output).
Collector Current 100 milliamps 2S00V(peak) 1770V(RMS)
(Continuous) Steady"State Isolation Voltage (Input to Output).
··Derate 4;OmW,oC above 25° ambien~ 1SOOV(peak) 1060V(RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-TRAI'./SISTOR MIN. MAX. UNITS;
Forward Voltage 1.1 1.5 volts Breakdown Voltage - V(BR)CEO 300 - volts
(IF = lOrnA) (lc = lmA; IF = 0)
Breakdown Voltage - V(BR)CBO 300 - volts
(lc = 100llA; IF = 0)
Reverse Current - 10 microamps Breakdown Voltage - V(BR)EBO 7 - volts
(VR =6V) (IE = lOOllA; IF = 0)
Collector Dark Current - IeEO
(VcE=200V; IF=O, TA = 25°C) - 100 nanoamps
Capacitance SO - picofarads (VCE=200V; IF=O; TA =1 00° C) - 250 microamps
(V = O,f= 1 MHz)

DC Current Transfer Ratio (IF = lOrnA, VCE = 10V)
Saturation Voltage - Collector to Emitter (IF = lOrnA, Ie = O.SmA)
20
-
-
0.1 0.4
- %
volts
Isolation Resistance (VIO = SOOVoc) , 100 - - gigaohms
Input to Output Capacitance (VIO = O,f = IMHz) - - 2 picofarads
Switching Speeds: Tum-On Time - (VCE = lOY, ICE = 2mA, RL = lOOn) .. - 5 - microseconds
Tum-Off Time- (VCE = lOV, ICE = 2mA, RL = lOOn) - 5 - microseconds

334
CNY33 j'
10 10
v
I /' ...-- IF-20mA
I
u 1.0
/
[,.'OmA
---
!I /
./
NORMALIZED TO:
-~
VC["IOVOLTS
j O. I IF-IOmA
----
I
.H / NORMAUZED TO:
VCE -10 VOLTS
/ If- IOMA
TA-+25·C
2 4 SIlO 20
IF-INPUT CURII£NT-M.
40 110 110100
I
- IS +25
TA-AMBIENT TEMPERATURE-'C
+liS +100
1. OUTPUT CURRENT VS INpUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE
IOOD
.,." 10 IF' mjl
",'"
;'
100
/~
-
V
IFi'rr,~
1 10 I
...
/
I
1
U ID I
IF-SmA
~ I I I
i'l'
.... 0 .1
/ I ~
I
I
I I
ALIZE TO:
VCE ·10 VOLTS
IF-lOrnA
.00I
o .5
/ 1.0 1.5
VF-FORWARD VOLTAGE-VOLTS
Z.O
.0I
.01
I
I 10 100
VCE - COLLECTOR TO EMITTER VOL1IUIE -VOLTS
1000
104~
./ .~~~:::'~~
'~~.;~~§
50D
250
~
,
.....
.........
..is.
c Vee" OY
I ~[F'50mA
./.V /
ZOO
~
0:
0:
i!
~'// III
I 150
.............
. '70" TO:
0:
I?u .............
I /././ ~;~~~.- .~,~ ......'" 100 VCI'200Y
8I
'+ZS'C
.. 1'---- /Z,"OmA
---
Vce"OV
0
'u
~
'50
r--t--
L.Vce·'OV
1""'-- -/-IF "omA
r- ..... __
IF-SmA
ler Z
• TA - AMa~i~T TEMPERA~u'RE -'C ·"0 +12: 0
- - 25 0 +25 50
TA -AMBIENT TEMPERATURE -'C
. +75 +100
5. NORMALIZED DARK CURRENT 6. COLLECTOR BASE CURRENT

VS. TEMPERATURE VS. TEMPERATURE
335
SOUDSTATE
@ co ELECTRONICS
AC Input Photon Coupled Isolator CNY35
Ga Aslnfared Emitting Diodes & NPN Silicon Photo-Transistor ~ .
The General Electric CNY35 consists of two gallium arsenide,
infrared emitting diodes connected in inverse parallel and coupled
witha silicon photo-transistor in a dual in-line package.
FEATURES:
•
•
AC or polarity insensitive inputs
Fast switching speeds
lji{(f----~ 6
• Built-in reverse polarity input protection 2 I I 5
I I
• High isolation voltage 3o-f- I 4
L _______ .JI
• I/O compatible with integrated circuits MILLIMETERS INCHES
S't'MIIOL NOTES
MIN. MAX. MIN. MAX.
absolute maximum ratings: (25°C) (unless otherwise specified) A 8.38 ,I 8.89 .330 J .350
8 7.62 REF. .300 REF. 1
INFRARED EMITTING DIODE C - 8.64 - .340 2
D .406 .508 .016 .020
Power Dissipation - TA =25°C *100 milliwatts E - 5.08 - .200 3
- F 1.01 1.78 .040 .070
Power Dissipation - TA = 25°C *100 milliwatts G 2.28 2.80 .090 .110
H - 2.16 - .085 4
(TC indicates collector lead J .203 .305 .008 .012
temperature 1/32" from case) K 2.54 - .100 -
M - IS" - IS'
Input Current (RMS) 60 milliamps N .381 - .015 -
- -
Input Current (peak)
(PUlse width IllS, 300 pps)
±I ampere
P
R
S
2.92
6.10
I 9.53
3.43
6.86
.115
.240
.375
.135
.270
NOTES:
"'Derate 1.33 mWrC above 2SoC 1. INSTALLED POSITION LEAD CENTERS.
PHOTO-TRANSISTOR SEATING PLANE.
4. FOUR PLACES.
Power Dissipation - TA ='25°C **300 milliwatts
Power Dissipation - TA = 25°C ***500 milliwatts
TOTAL DEVICE
(TC indicates collector lead
temperature 1/32" from case) Storage Temperature -55 to 150°C
VCBO 70 volts Lead Soldering Time (at 260°C) 10 seconds
VEBO 5 volts Surge Isolation Voltage (Input to Output)
Collector Current Continuous) 100 milliamps 1500V(peak) 1060V(RMS)
"""Derate 4.0 mW/oC above 2SoC Steady-State Isolation Voltage (Input to Output)
"""*Derate 6.7 mWrC above 2SoC 950V(peak) 660V(RMS)

INFRARED EMITTING DIODE MAX. UNITS PHOTO-TRANSISTOR MIN. MAX. UNITS
Input. Voltage - V F 1.8 volts Breakdown Voltage - V(BR)CEO 30 - volts

(IF = ±lOmA) (Ic = lOrnA, IF =0)
Breakdown Voltage - V(BR)CBO 70 - volts
(Ic = 1001lA, IF =0)
Breakdown Voltage - V(BR)EBO 5 - volts
(IE = lOOIlA, IF =0)
Capacitance 100 picofarads Collector Dark Current - ICEO - 200 nanoamps
(V =O,f= I MHz) (VCE =IOV, IF =0)
336
CNV35
coupled electrical characteristics (25 °e) (unless otherwise specified)

MIN. MAX. UNITS
Current Transfer Ratio (VCE = lOY, IF = ± lOrnA) 10 - percent

Saturation Voltage - Collector to Emitter (ICEO =0.5. rnA, IF =± lOrnA) - 0.4 volts
Isolation Resistance VIO =500V (note 1) 100 - gigaohms
Note 1: Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together and
the output terminals (transistor) shorted together.
Ie
PEAK
OUTPUT ( \ f\
I \ I \
IC
I 1\ I 1\
PEAK
OUTPUT
I \ I
/'
"\ I \ /
/'
"\
l/ . \ / \. J . \J I,
I(CEO)OUTPUT WAVE FORM (SEE NOTE 2)
AT VCE '5V
V
/
"\
.........
I \ /
\ / \ /
i\. /V
./
IF INPUT WAVE FORM
"
10
...z
"':>
II:
II:
...u
I
f( -'"
-- IF'-I~AI
-
IF·llOmAI
~
.""'
0
IL
10"1
Note 2: These waveforms and curves are. exaggerated

in amplitude differences to indicate the out-
puts corresponding to the positive and neg-
.ative input polarities will not be identical.
10"3
0.01
~0.1 I 10 100
Typical differences in amplitude is 10% to
20%.
licE -COLLECTOR TO EMITTER VOLTAGE - VOLTS
337
ICNY35 .
50
I
-
0
40 $ _ _IUD TOo
I
V V
0
Yct:'1OY
I, 'IOIIIA
,
1.0
1/
0 I /
V
0
I .0
, I
/
I .01
, .00s /
/
~V
-30
-40 I J
.001
,/
V·
-50
/ .000
/
-w - ~ ~ ~ 0 ~
V.. -INPUT VOLTAGE -VOLTS
~ ~ W DOOI.I .2 .4.6.81.0 246810
I, -INPUT CURRENT-IlIA
20 40 50 80 100
1. INPUT CHARACTERISTICS 2. OUTPUT CURRENT VS INPUT CURRENT

... •
,'3OV
~'2OY
~ • I ..·""""
,oJ 'lV
VeE-IOV
",.,,,,,,,
~
r---
0
'l'/ •
.
'lV
r-; /
•
•
-- r--
,. fir!
NORMlUZEO TO:
.Vet"IOV
fA. +H"C
I, -0 = f= .I
I--
r-- - ...
0
I
I
... -
NOftMA&,.IZED TO:.
~
~
",. ,...
-
.... IOY
IF -10mA
TA'r
, . .
TA-AMIENT T[MPERATURE--c
'100 ,0I II) ..zs 0 2& 50
TA - AMBIENT TEllPERATURE -'"C
15 IDO
3. DARK I CEO CURRENT VS TEMPERATURE 4. OUTPUT CURRENT VS TEMPERATURE

50
NORMtUZED 1C)I
... ·IO ....TS
• IF~5OmA - I-
I .. -IOIIIA I .. "201IlA - l-
10
~J...l5OMA
0
/' UL
V1".zO-. •
~~
1,.5t11A_
l-
~ I ,......
"'" r;::.. r-
// "I IF
I /' JI
1,- 5mA / 1\
V .I
=F
,
II.
IVY
"r I
"""i,. .....
I
•
/
J.::r!t ...
~~ED~
I / IF alOmA
.,.1 ...
.01
II V .01
I I
I ... ·~ l-
1,.-ltnA
-
.00 I .01
/; 'l f/'(
MOA a.5LO 5to
Vea -COLLECfOR TO ~ YOLTAGE-WLTS
I"r 00 '00
001
10 ",eo 100 400 600
-
5. OUTPUT CHARACTERISTICS 6. OUTPUT CURRENT VS BASE
EMITTER RESISTANCE
338
TYPICAL APPLICATIONS CNY35
LOAD MONITOR AND ALARM
POWER SWITCH
I
1 ~
0 - -......- -
MONITOR
SWITCH
In many computer controlled systems where
120VAC AC power is controlled, load dropout due to
filament burnout, fusing, etc. or the opposite
situation - load power when uncalled for due to
switch failure can cause serious systems or
safety problems. This circuit provides a simple
220.n. AC power monitor which lights an alarm lamp
and provides a "I" input to the computer
control in either of these situations while
+5V maintaining complete electrical isolation be-
tween the logic and the power system.
D29E2 Note that for other than resistive loads, phase

angle correction of the monitoring voltage
INPUf;.~R~GIC3,h0 LED . divider is required.
o---------------------~~~ LIGHT
ALARM
RING DETECTOR
0.2,u.f IK r--------,
o---i .---1----0 In many telecommunications applications it is
desirable to detect the presence of a ring
I
86 Voc -..... 1
I
I
signal in a system without any direct electrical
contact with the system. When the 86 Vac
ring signal is applied, the output transistor of
the CNY35 is turned on indicating the presence
of a ring signal in the isolated telecommuni-
1 cations system.
L _______ ~
CNY35
UPS SOLID STATE TURN-ON SWITCH
BATTERY
Interruption of the 120 VAC power line
turns off the CNY35. allowing C to charge
and turn on the 2N5308-D45H8 combination
which activates the auxiliary power supply.
TO INVERTER
OR ENGINE This system features low standby drain, isola-
STARTER tion to prevent ground loop problems and the
capability of ignoring a fixed number of "drop-
pedcycles" by choice of the value of C.
CNY35 -
339
, SOLID SIAl E
@. ©ELECTRONICS
The General Electric CNY36 is a gallium arsenide infrared emitting
diode coupled \Vith a silicon photo-transistor in a plastic housing.
The gap in the housing provides a means of interrupting the signal.
with tape, cards, shaft 'encoders, or other opaque material, ., ...II.' '2.0 .457 ,472
NOTES'
..
" ...
.. ... .......
switching the output transistor from an "ON" into an' "OFF' tE:I •t u . 111 .129 DPIVID "ROM WLL_Tt:RS•
.012
...
..10
". 13i
2.8 ,09' .110
E .245 .
state. L
6,"
lOCI .51$
FEATURES: • I.S NOli. .051 NOM.

.051 NOIl-
" I.' NOM.
.,•
R,'
A5ll.o I 1
UNOM. .051 NOlI.
1]1 r.-:~'
• Low cost, plastic module i-~'" ..jozj-
5.45 3.75
.034 .051
.131 .147
T 2.S M. .10 NOM.
• Non-contact switching
• Fast switching speeds 4
• Solid state reliability II 1"'
'''''/1 . II.
• I/O compatible with integrateo circuits L .J L_ .J
2 1

Storage and Operating Temperature _55° to 85°C. Lead Soldering Time (at 260°C) 10 seconds.

'power Dissipation *100 milliwatts PowerDQ~pation *.150 milliwatts
Forward Current 1 amp VCEO 30 vQlts
(peak, 1001lS, 1%duty cycle) VECO 5 volts
*Derate 1.67mWrC above 25°C ambient **Derate 2.5mWrC above 25°C ambient

INFRARED EMITTING DIODE TYP. MAX. UNITS P!iOTO-TR.ANSISTOR MIN. MAX. UNITS
Forward Voltage l.2 1.7 volts Breakdown Voltage 30 - voits

(IF = 10 rnA) . V (BR)CEO (Ie = 10 rnA)
Reverse Current - 10 /.lamps Breakdown Voltage S - vohs·

(VR = 2V) V(BR)ECO (IE =100~A)

(V = 0, f =1 Mhz) leEO (VCE" 10V, IF = 0, H=O)

Ou~put Current (IF = 20mA, VCE = lOV) 200 400 - ~amps ,
Saturation Voltage (IF =20mA, IC = 2S~A)
Switching Speeds (VCE = 10V, IC = 2mA, RL =lOOn)
- 0.2 0.4 volts
(td + t r )
On Time
(ts + tf)
- 5 - ~sec
Off Time
- 5 - p.sec
340
(CNY361
-
10
8
10
8 ==" NORMALIZED TO VCE·oSV,r,.. 020 mA, TA 02SoC
==
~
....z
6
4
./
i--"
~-
_.
----"-,INPUT PULSEQ IF" 100 mA
IF-60mA~
-
-
~
------
2
~ V ........- r-
I
~
~
5
.8
.. 6
.4
, ./
NORMALIZED TO -
IF"20mA
IF -30 mA
IF 02'O":A-- f---
a I
.... / VCE - SV
:I .2 PULSED
/ PW=I&g:
--
--,.,...-
PRR-I PIli
I IF"IOmA
"'z! .08
.06 ----+-
---Fh
J,..
~
! .04 I I
-
.!J .02
/
I
I I -20 0 20 40 60 80 100
.0 I 2 4 6 8 10 20 40 60 80 100 200 400 S)() 1000 -55 - 10
I ....INPUT CURRENT-mA T,,-AM8IENT TEMPERATURE-OC
Dl1'ECTOil EMITTER
3~----~----~----~----~----~----~--~
105 /
Ie I.B mA
NORMALIZED TO-
IF " 20 ",A
2 ~, T -25"C
!£. " Ie _ ---t"7'"r-l V/
IF 30 mA A
~
a
....N PULSED IF <t' ~ I--
:J
PlN-IOOI'"PRR-IOO PPI .~ .~""-
~ (J'"
':I"
II: /, ./
i I ] I 1 /'
~
.,.:
iii
a f /:
~ .8
/ / ./
I 1/
15mA 1
NORMALIZED TO-
VCE "25V ~
- NORMALIZED TO-
VR "5V
--
.6
I I
TA-2 5 "C ~
.I
- _T,,"25OC
I I
.I
-50 -25 0 25 50 75 100 +25 +50 +15 +100 +25 +50 +75, +100
TA -AMBIENT TEMPERATURE-OC T,,-AM8IENT TEMPERATURE·"C TA-AM8IENT TEMPERATURE-oC
3. VCE(sat) VS. TEMPERATURE 4. LEAKAGE CURRENT~ VS. TEMPERATURE
d-DISTANCE-mila
78.7 1575 2362 315 3937
4.5
4
/
1.00
, /
III Vcc -5V, V I
l 3 IF-~
RL
A ~ I /
~
N PW-3001"
tON t~ V I
NORMALIZED
~ 2 PRR-IOOpp, /./ TO VALUE WITH

SHIELD
&V
REMOVED
....a
N
NORMALIZED TO
RL =2.5K4
/'
~LACK
SHIELD
:J 1.5 I
~
+ D_d
'"
:I
II:
+ -0
~ BLACK
0
Z
I
/ SHIELD
j .9
./
(!]-:
a
z
.8
/" " RL - I
'~" .7
.6
./ D~tG;=
.5
/
A5 I I 11 .000I0
IK 2K 31< 4K SK 6K 7K 8K 9K 10K 2 4 6 8 10
RL-LOAD RESISTANCE-OHMS d- DISTANCE-mm
341
SOLID SlATE
@ co ELECTRONICS
~
Photon Coupled Isolator CNY47,CNY47A
The General Electric CNY47 and CNY47A are gallium arsenide
infrared emitting diodes coupled with a silicon photo-transistor
in a dual in-line package.
..l--A
.
,
.--- -
'I
t J
T- T 3
A
t
SEE' '-----'-""""'N=CH"-
NOTE' SYMBOL ",. I....
A
8
C
0
.~OO REF. 7.62
.340
.016 .020 ,406
..i,
MILL IMETER
.33~1 .3508.3. 8.89

REF.
MAX
8.64
.50B
.OT<'
2
3

I
roll-- I
.
.J"'f
lJ C (TOP V'EW)
4 6 -L
S
I
~
E
F
J
.200
,040 .0701.01
.090 :~~~ 2.2ti
.008.0' 2 .203
5.08
1.78
~:~:
.305
4
J i--B~ K .100 2.54

INFRARED EMITTING DIODE -+1- -IFI- = .Ol~ '5' .381 '5' 3
,..---,
I: n r J : 6 . SEATING IE..L
IT
--r-~I P .375 9.53
Power Dissipation *100 milliwatts I ___ P R ,.225.2805.71
S .100 .18S 2.54 .47u
7.12
, 30 I PlA''' I ~ NOTES·
Forward Current (Continuous) milliamps 2
I
. 5
I
KN
--*-=--
I I. There ."011 be a permanent indlcatfon of ttrm-
Inal orientation in the quodrant adjGCelt' to·
Forward Current (Peak) 3 ampere -I ~~ hlrminall .
3 0-+-
L __ J
4
' .
1-0 2. Installed position l.ad center•.
3. Overall instolled dimension.
(Pulse width llJS 300 pps) 4. These m""\lre"'''M''I are ""'1610 f,.,..", the SII"II.
i"4 plane.
Reverse Voltage 3 volts 5. Four ploces,
*Derate 1.33mW/oC above 2SoC ambient

TOTAL DEVICE
VCEO . 30 volts Lead Soldering Time (at 260°C) 10 seconds
50 volts Surge Isolation Voltage (Input to Output).
VCBO
VEBO 4 volts 2828V(peak) 20ooV(RMS)
Collector Current (Continuous) 30 milliamps Steady~State Isolation Voltage (Input to Output).
'''Derate i.omWfC above 2SoC ambient 1695V(peak) l200V(RMS)
INFRARED EMITTING DIODE TYP. MAX. UNITS . PHOTO-TRANSISTOR MIN. TYP. MAX. UNITS
Forward Voltage 1.1 1.5 volts Breakdown Voltage-V(BR)CEO 30 - - volts

(IF = 10mA) (Ic= lOmA, IF = 0)
Breakdown Voltage-V(BR)CBO 50 - - volts
(Ic= ~OO~A, IF = 0)
Reverse Current - 100 microamps Breakdown Voltage-V(BR)EBO 4 - - volts
(VR = 3 V) (IE = 100~A, IF = 0)
Collector park Current-leEo - 5 100 nanoamps
. (VCE = 10V, IF = 0)
Capacitance 50 - picofarads Collector Dark Current-leBO - - 20 nanoamps
(V= O,f= 1 MHz) (VCB = 10V, IF = 0).
Capacitance - 2 - picofarads
(VCE = lOV, F:= 1 MHz)

DC Current Transfer Ratio (IF = lOrnA, VCE =.4V) CNY47 20 - 60 %

CNY47A 40 - - %
Saturation Voltage - Collector to Emitter (IF'= lamA, Ic = 2mA) CNY47
-
- 0.1 0.4 volts
(IF = lOmA, Ie = 4mA) CNY47 A 0.4 volts
Isolation Resistance (VIO = 500Voc) 100 - gigaohms
- - 2
Input to Output Capacitance (VIO = O,f= 1 MHz) picofarads
.Switching Speeds:
Rise/Fall Time (VCE = lOY, ICE = 2mA, RL = lOOn) - 2 - microseconds
Rise/Fall Time (VCB =10V, ICB = 501LA, RL = lOOn) - 300 - nanoseconds
~ VDE Approved to 0883/6.80 01 lOb Certificate # 35025 .
342·
ICNY47, CNY47AI
Kl
V
V
~
"'02QnA
",01OnlA
-- r---
NORMALIZED TO
VeE -IOV
I-- ---- t--- r--..
IF-lOmA
IF O _
V
I
V I""---- r--
~TO'
\b: 0 lOY
I,-lOmA
T..o25"C
DI
I
I 100
I Kl 100
rF - N'UT CURRENT - ",A
10
1000
, ,.~
'- .... I F·5QmA

,/
t,.-~
11
--
IF o
100
/ ~TI
.. 10
/ II V~
/
~L
/
E
IV
II 17 -.oALIZED 10,
VeE- IOV
IF 0 IOmA
1
_1 ULl._
.01
I "c£- COLLECTOR
OUTPUT CHARACTERISTICS
,
10 EMITTER YOLTAGE-YOLTS
10 100
.5
/ 1.0 1.5
YF-FORWARO VOLTAGE - VOLTS
2.0
100
L/
V
'"t"-.. t'---
......
t- II
.......
r- I-RLo'KII
/
~~
0
~ NORMALIZED TO
'" .....
........
[,7 IbolOY
I-- YCE olOVOLTS
I-- RLo
ICEo-2mA
tan • _toff· 3....
" r-....
r--
RL -fOOa
I
RL -lOA
V
I I I I.
IJ
ID . 10 !DO
I
10. 100
ICEO- OUTPUT CURRENT - 1ft. I,--lJIIIIIT CUIIIENT-IftA
343
5a.IOsmTE
@ co ELECTRONICS
Photon Coupled Isolator CNY48':5~1 :'~ SYMBOL
MILLIMETERS INCHES
NOTES
Ga As Infrared Emitting Diode &. 2 . : I 5, .. MIN. MAX. MIN. MAX.
NPN Silicon Photo-Darlington Amplifier 30---1:-___ .1 4., A 8.38 '1

8.891
7.62 REF.
.330 J .350
1
B .300 REF.
The General Electric CNY48 consists of a gallium arsenide, in- C - 8.64 - .340 2
D A06 .508 ; .016 .020
frared emitting diode coupled with' a silicon photo-darIington E - 5.08 - .200 3
F 1.01 1.78 .040 .070
amplifier in a dual in-line package. G 2.28 2.80 .090 .110
H - 2.16 - .085 4
J .203 .305 .008 .012
absolute maximum ratings: (25°C) K
M
2.54
-
-
15"
.100
- 15"
-

N ,381 - .015 -
P - 9,53 - .375
Power Dissipation *100 milliwatts

R
S
2.92
6.10
I 3.43
6,86
,115
.240
.135
.270

1. INSTALLED I'OSITION LEAD CENTERS.
Forward Current (Peak) 3 ampere 2. OVERALL INSTALLED DIMENSION,
(Pulse width 1 J.l.S 300 pps) 3. THESE MEASUREMENTS ARE'MADE FROM THE
SEATING PLANE.
Reverse. Voltage 3 volts 4. FOUR PLACES,
"'Derate 1.33mWfc above 2SC>C ambient.
TOtAL DEVICE
PHOTO-DARLINGTON Storage Temperature -65 to 150°C
Power Dissipation **150 milliwatts
VCEO 30 volts
Surge IsolationVoltage (Input to Output).
VCBO 30 volts
VEBO 6 volts 2120(peak) , 1500V(RMS)
"Derate 2.0mW/oC above 25°C ambient. 1270V(peak) 900V(RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-DARLINGtON MIN. TVP. MAX. UNITS
Forward Voltage Breakdown Voltage-V(BR)CEO 30 - - volts

(IF = 10mA) 1.1 1.3 volts (Ic = 10mA, IF = 0)
(Ic = 100J.l.A, IF = 0)
Reverse Current Breakdown Voltage - V(BR)EBO 6 - - volts
(VR =3V) - 10 microamps (IF = 1ooJ.l.A, IF = 0)
Collector Dark Current - IeEO - 5 100 nanoamps
(VCE = lOY, IF = 0)
Capacitance Capacitance - 6 - picofarads
(V= O,f= 1 MHz) 50 - picofarads (VCE = 10V,f= I MHz)
coupled electrical charactetistics(25 °C)

MIN. TVP. MAX. UNITS
DC Current Transfer Ratio (IF = lOrnA, VCE. = IV) 600 - - %

Saturation Voltage-Collector to Emitter (IF = ImA Ic = 2mA) - - .8 volts
(IF = SmA Ie = lOmA) - - .8 volts
(I F = lOmA, Ie =6OmA) - - 1.0 volts
Isolation Resistance (VIQ =500VD c) 100 - - gigaohms
Input to Output Capacitance (VIQ =O;f = IMHz) - - 2 picofarads
SwitchingSpeeds: (VCE = lOY, Ie = 10mA, RL 1000) = On-Time - 125 - microseconds
Off-Time - 100 microseconds
® VDE Approved to 0883/6.80 OllOb Certificate # 35025

344
TVPI(:AL CHARACTERISTICS " CNY48
100 10
IF =4.0 mA
....
iI&J
i:;,
10
---
Z
I&J
II:
II: -
--
u
1.0
,,- a
.... 1.0
~F " 1.0mA
!5
Go
V ~
~ I /' S ~
a
N
/'
Q
I&J
N
~
~ IF •. 5mA
:J I-"'"
:: .01 /
NORMALIZED TO: ;j
VCE " SV lIE I
~ IF =1 mA ~
Z
,
NORMALIZED TO:
VCE • 5V
.....
I
.....
~ .00 I e IF. tmA
TA' +25"C
.000 I
.1 1,0 10
.0I
-55 -I!S
1
25 65
100 100
IF -INPUT CURRENT -mA TA - AMBIENT TEMPERATURE -"C
1,000
,.-- 10
100 ./
"' ..... ....Z
~ r-- ~ t
l7
=4.0(' A 1-
«
e,
....Z 10
// I&J
II:
II:
:;,
U
,~
l - - 1 ; ' : l . o t I-
.... 1.0
/
I&J :;,
II: Go
....:;, J......-'"
II:
:;,
U o I--"'" IF". S m~ _ f-
1.0 Q
~
~
II:
V I&J
!::!
oJ
« I
e O. I lIE I
/
II:
I
... ~,
NORMALIZED TO:
....
.0 I ...o VCE • 5V
I
.S
/ 1.0 I.S
'YF - FORWARD VOLTAI;E - VOLTS
2.0
.0 I
.1
j
1.0 10
J;F',·OIIIA
100
100
"\ LOAD RESISTANCE
Ion ./
I NORMALIZED TO ~ ./
.... 10 5
«
e, \ I VCE"'OV
RL",oon -
Z
'"II:
.... r-.. loon. ICEO"OmA g;
u
10 4 ./
~ 10
/
II:
::>
o \
"
o~ 103 1/
i.... 1\' o
III
!::! 10 2 /
/
a'0 \
~\
oJ
\Iooon «
lIE
'0
...'" 1.0
\.
II:
~ 10 I
/ NORMALIZED TO:
\[\ , VCE = 10V
...o / IF • 0
N~ ..!"' 1.0 1,,1""
TA =+2S·C
O. I I
0.01 0.1 I .10 100 o + 25 +45 +65· +85 +100
NORMALIZED SWITCHING SPEED TA -AMBIENT TEMPERATURE _·C
Id+I,+I.+I,
345
SOLID STATE
@ D © ELECTRONICS
Photon Coupled Isolator CNV51
Go As Infrared Emitting Diode & NPN Silicon Photo-Transistor :: f\i::
The General Electric CNY51 consists of a gallium arsenide,
infrared emitting diode coupled with a silicon photo-transistor I
-.
1
3
A-I -t-
,.
3e>-l-L__
~
J
1
4
MILLIMETERS INCHES
in a dual in-line package. C (TOP VIEW) S SVMBOL NOTES
FEATURES:
lJ4 6~ A
B
MIN. MAX.
8.38.1 8.89
7.62 REF.
MIN.
.330 J
MAX.
.350
.300 REF • 1
• High isolation voltage, 5000V minimum. C -
.406
8.64 I -
.016
.340
.020
2
D .508
• General Electric unique patented glass isolation con- E - 5.08 - .200 3
F 1.01 1.18 .040 .070
struction. G 2.28 2.80 .OBO .110
• High efficiency liqUid epiraxial IRED. H
J
-
.203
2.16
.305
I -
.008
.085
.012
4
• High humidiy resistant silicone encapsulation. K 2.54 - .100 -

M - 15' - 15'
• Fast switching speeds. N .381 - .015 -
P - 9.53 - .375
R 2.92 3.43 .115 .135
absolute maximum ratings: (25°C) (unles~ otherwise specified) S 6.10 6.86 .240 .270
. SEATI~. NOTES:
~B~l
r:M~JD~',;1
INFRARED EMITTING
Power Dissipation - TADIODE
= 25°C *100 milliwatts . "I 2. OVERALL INSTALLED DIMENSION.
Forward Current (Continuous) 60 milliamps SEATING PLANE.
Forward Current (Peak) 3 amperes 4. FOUR PLACES.
(Pulse width Ip.sec, 300 pps)

Reverse Voltage 6 volts _, Creepage Distance 8.2mm min.
*Derate 1.33mW/oc above 25°C. Air
...-_ _ _ _ _ _ _ _ _ _ _ _ __Gap
__ mm
7.6_ min.
__ _ _ _ _---,
TOTAL DEVICE
Storage Temperature -55 to 150°C.
PHOTO-TRANSISTOR
Power Dissipation - T A = 25° C **300 milliwatts Lead Soldering Time (at 260°C) 10 seconds.
VcEa . 70 volts Surge Isolation Voltage (Input to Output). See Note 2.
VcBa 70 volts 5656V(peak) 4000V(RMS)
VEBa 7 volts Steady-State Isolation Voltage' (Input to Output);
Collector Current (Continuous) 100 milliamps See Note 2.
*·Derate 4.0mW/oC above 25°C. 5000V(DC) 3000V(RMS)

INFRARED EMITTING DIODE MIN. ~AX UNITS PHOTO-TRANSISTOR MIN.' TYP. MAX. UNITS
Forward Voltage - ,V F ~
1.65 volts Breakdown Voltage - '(BR)CEO 70 - - volts
(I F = 60mA) (Ic = 10mA, ~ = 0)
Forward Voltage - V F .8 1.5 volts Breakdown Voltage - '\{BR)CEO 70 - - volts
(I F = 10m4) (Ie = 100JlA, :...- = 0) ,
Forward Voltage - VF .9 .1.7 volts Breakdown Voltage - V(BR)CEO 7 - - volts
(IF= 10mA) (Ie = 100JlA, :...- = 0)
T A= -55°C
Forward Voltage - VF .7 1.4 volts
Collector Dark Current - I CEO - 5 50 nano-
(VCE = 10V, IF = 0) amps
(IF= 10mA)
T A= +100 o C Collector D~rk Current - I CEO - - 500 micro-
(VCE = 10V, IF = 0, amps
Reverse Current - I R - 10 rnicroamps TA = 100°C
(VR = 6V)
Capacitance - C J - 100 picofarads Capacitance - CCE - 2 - pico
(V = O,f = 1MHz) (VCE :i: 10V,.f =IMHz) farads
'.
~ Covered under U.L. component recognition program, reference file E51868

. ~ VDE Approved to 0883/6.80 0110b Certificate # 35025
346
ICNY51 I
DC Current Transfer Ratio (I F = lOrnA, VeE = lOY) CYN51 100 - - %
Saturation Voltage - Collector to Emitter (IF = 20mA, Ic = 2mA) - - 0.4 volts

Isolation Resistance (Input to Output Voltage = SOOVDC ' See Note 1) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage =O,f= 1 MHz. See Note 1) - - 2.0 picofarads
Turn-On Time - ton (Vee = 10V, Ie =2mA, RL = lOOn). (See Figure 1) - 5 10 microseconds
Turn-Off Time - toff (Vee = IOV, Ie = 2mA, R L.= lOOn). (See Figure 1) - 5 10 microseconds
NOTE 1:
Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together
and the output terminals (transistor) shorted together;
NOTE 2:
Surge Isolation Voltage
a. Defillition:
This rating .is used to protect against transient over-voltages generated from switching and lightning-induced surges. Devices shall be
capable of withstanding this stress, a minimum of 100 times during its useful life. Ratings shall apply over entire device operating
temperature range.
Specification, in terms of peak andlor RMS, 60 Hz voltage, of specified duration (e.g., S6S6Vpeak/4000VRMS for one minute).
" Test COllditions:
Application of full rated 60 Hz sinusoidal voltage for one minute, with initial application restricted to zero voltage (i.e., zero phase),
from a supply capable of sourcing SmA at rated voltage.
Steady-State Isolation Voltage
a. Definition:
This rating is used to protect .against a steady-state voltage which will appear across the device isolation from an electrical source
during its useful life. Ratings shall apply over the entire device operating temperature range for a period of 10 ~inutes minimum.
h. Specification Formot:
Specified in terms of D.C. and/or RMS 60 Hz sinusoidal waveform.
c. Test Conditions:
Application of the full rated 60 Hz sinusoidal voltage, with initial application restricted to zero voltage (i.e., zero phase), from a
supply capable of sourcing SmA at rated voltage, for the duration of the test .
.--------, INPUT
o--J l - PULSE
)L---....-OUTPUT
"L
TEST CIRCUIT VOlTAGE WAVE FORMS
FIGURE 1: Adjust Amplitude of Input Pulse for Output lIel of 2mA
347
1000
",'"
,
100
.' I
I "
~ 10
/ ....
! if
I
."-
, 11.0 1/
II
.0
'" t-.
fZ
.!to. I
.. ""'- ........~
..
.0 I
f
I . ,..
r----
.00 I 0 .5
/ 1.0 1.5 20 .I .. A .. • 1.0
•
.,-FORWARD CURRENT·MA
• • 8100 20 40 10 10 100
V. -FORWARO VOLTAGE - VOLTS
.0'
1Vco! ....
~t:.2OV
'f'l' ~i·IOY
I
"JV ...
r,/V ~ ""
Yc.0'011
....
Yea""'"
II 1
rJ V !I 00'
1/ 77
'IV /7 7
I
j
10'
1/ 'I
.......ZEOtO:
,.o4t"C
Ya:°'OV
I... 0 f::: f::: I
j
,,' .I":
/
rI /" / ""..,.
IIOMMLlztO 10:
--
.
T. "4I"C '--
II '.0
7 I,. 00
0.' . . . 0.'
+25 +10
T.· . . .1lNT lDIPlR""-IItI·-c
+" +fOG
10 100
_'100
I, -.o_
"",.10_... 50
10
J
~I"-
~~..o...
0
5
/'
L.! -
---
1•• IOmA
l-:;:::::: ~ _I
.
.... 1-- [7,, ,..::~~
// c.. ~ '~'i 0
il
1.,- •• 5
V 1'1 I
~s-J
V
, IJ'ff I
_Ij'" VV~J ,
I
I 'I' i-1.JmA
~.j.~~~ ~---
r---
17 ,
t,.
III' .1
I
, 1000C
II7 ,"
1/I V ~.I ...
l:n','
, II'4~ I
I
I
I
)
, I
- h~ 'Ilf
I
'"
--I"r
.0 I
/" "i~"'" / I ,
.005
.. '"
l/. 1/
~
,/
.00I.00 .al0J o.tLO 110 10100 .00.I 01 .02 .04.06 .08 0.1 .2 .4.6.B 1.0 2D
VOlE -COLLICfOIt 10 IIIrna VOLTMI-WL.TI
VeE - COLLE'CTOR TO EMITTER VOLTAGE - VOLTS
.348
ICNY51)
10
1.0
•
_ _ 10
-\Ico:'10\1
I, -IOu
./
~ - -- 100
V.-ICW
..,.""
.' .
i.-" /'
I' 1/
V
10
.. V
I ,01
I
./ ./
I, V
./
.01
./" I
• .00
/ L.
J
-
.000'
V
./
V ,
J
/
v
L
L
~~
.1 . • • .".0 t
I, --., CUIIIIUr-OIA
• • • 10 10 40 1 0 _ .1 ..... I 1,· _
1 _
• •·••
• 10 10 40 ID eo 100
7. OUTPUT CURRENT VS. INPUT CURRENT . 8. OUTPUT CURRENT - COLLECTOR·TO·BASE

VS. INPUT CURRENT
• c~- r-
I
•
110.....
·.ow - I-- '.0
•
V
Jc.... ~ r-
UL
...-
.
--
r-
I• •
J I ./ II
I• r-- I • 1/ I
:~ .. =F
I· ;.oe
r- t--- t-.. l!.. IJ I I
~~
I"·-r-
1"·-
.. 1 II 1,- ._
--
~.oo
.04
NOMULtZID TO'
~
~
...
... 1.:j
'\:c·1OV
t--
.01
9. OUTPUT CURRENTVS. TEMPERATURE

... . !DO ...
10. OUTPUT CURRENT VS. BASE EMITTER
-- .... ...
..._,..,. .-
RESISTANCE
--
1.0
..
•I'--.....
6
! ~ 1--1-
4 ~t.FOfI"·~
1 ,.-
"",.101/
I ~ ~ r-.....
~
--"""KD • ~ I I
i"I
-- ...... -
2
........... I-"
1"-01"- I
j r-..... r-.. ..... - . z f D t....... · _ ~ 1--

! 1.0
I .• >-- NORMALIZED TO:
"-
...... ....... ........."", .... f-"
i! .1
; . VeI!'lO VOLTS
........
............
r--..
r-..... .....r-....... I v "V .... ",.,
-
lcEo'Z"'"
f- ""'IOOD ..,.-
I
1..,''eIf .3,0... ...... ..... ./ _10:
12
",,'1000
r----- "L'IOO K /
iaUZID .... _1,·_
I,· ...
............
1 1 1
-.. .............. 1 I
I
'.
I
QI
.1 2 ..
11. SWITCHING TIMES VS. OUTPUT CURRENT

.6" 1.0
I I 2 . . . . 10
'CIO-OIITP\Ir CU_NT-"'"
20 40 .IDID!DO 10 DO
12. SWITCHING TIME VS. RaE

• - -
349
SOLID STATE
@ D©ELECTRONICS
, Photon Coupled Isolator GE3009-GE3012
The General Electric GE3009.:.GE3012 series consists of a

gallium arsenide infrared emitting diode coupled with a light
activated. silicon bilateral switch, which functions like a triac,
These devices are especially designed for triggering power
triaes while maintaining dielectric isolation from the trigger
Control circuit.

Power Dissipation milliwatts

Forward Current (Continuous) milliamps
Forward Current (Peak) amperes
(Pulse width 1 ",sec. 300 pps)
-Derate 1.33 mWrC above 25°C ambient.
OUTPUT DRIVER
Off-State Output Terminal Voltage 250 volts ,..-----..,

(Full Cycle Sine Wave, 50 to 60 Hz)
100 milliamps
':pI
I fE'
, II ~
6 Pin5is
substrate
Peak Nonrepetitive Surge Current 1.2 amperes 2 ...!--OS DO NOT
I . I CONNECT
(PW =10 ms, DC =10%) 3o-r----
L _____ ..J
4
Total Power Dissipation @ TA = 25°C ··300 milliwatts
MILLIMETERS INCHES
SYI'IBOl 'NOTES
MIN. MAX. MIN. MAX.
TOTAL DEVICE
A 8.38 ~I 8.89 .330 J.350
B 7.62 REF. .300 REF. 1
C - 8.64 - .340 2
Storage Temperature -55°C to +150o C D .406 .508 .016 .020
E - 5.08 - .200 3
Operating Temperature -40°C to +100°C F 1.01 1.78 .040 .070
G 2.28 2.S0 .090 , .110
Lead Soldering Time (at 260°C) 10 seconds H - 2.16 - .OS5 4
Surge Isolation Voltage (Input to Output) J .203 .305 .OOS .012
K 2.54 - .100 -
5656 V(peak) 4000 V (RMS) M - 15' - 15'
Steady-State Isolation Voltage (Input to Output) N .381 - .015 -
P - 9.53 - .375
5300 V(peak)" 3750V(RMS) R 2.92 3.43 .116 .135
S 6.10 6.86 .240 .270
~ Covered under U .L. component recognition program, reference file E51868 NOTES:
SEATING PLANE. '
4. FOUR PLACES. •
350
I
GE3009, GE3010, GE3011~ GE30121
individual electric characteristics (25 0 C)

EMITTER SYMBOL TYP. MAX. UNITS
Forward Voltage VF 1.2 1.5 volts

(IF =10 mA)

(VR =3V) ,
Capacitance q 50 - picofarads
(V =0, f =1 MHz)
DETECTOR S•• Note 1 SYMBOL TYP. MAX. UNITS
Peak Off-State Current VDRM = 250V IDRM - 100 nanoamps

Peak On-State Voltage ITM = 100mA VTM 2.5 3.0 volts
Critical Rate-of-Rise of Off-State Voltage Vin = 30V(RMS) dvjdt 10.0 - voltsj llSec.
(See Figure 1)
Critical Rate-of-Rise of Commutating lload = 15mA dvjdt(C) 0.15 - voltsj 1lS«.

Off-State Voltage Vin = 30 V(RMS)
(See Figure 1)
Critical Rate-of-Rise of Off-State Voltage Vin = 140 V(RMS) dvjdt 6.0 - voltsj~c.
JEDEC conditions
coupled electrical characteristics (25 0 C)

IRED Trigger Current, Current Required to Latch Output GE3009 1FT - 30 milliamps
(Main Terminal Voltage = 3.0V, RL = 150 0) GE3010 1FT - 15 milliamps
GE3011 1FT - 10 milliamps
GE3012 1FT 5 milliamps
Voltages must be applied within dv/dt rating.
+ Rln 6
~
. v•• Vee 120n
-
r ING+S1lmM
2 5
OUT
OV
COMMUTAT 3 4
dv/dt dv/dt
RL
2K
FIGURE 1. dv/dt - TEST CIRCUIT
351
SOLID STATE
@D © ELECTRONICS
Photon Coupled Isolator GE3020-GE3023
The General Electric GE3020-GE3023 series consists of a

gallium arsenide infrared emitting diode coupled with a light
activ~ted silicon bilateral switch, which functions like a triac,
These devices are especially designed for triggering power
triacs while maintaining dielectric isolation from the trigger
control circuit.
absolute maximum ratings: (25 0 C)

Power Dissipation milliwatts

Fo~ard Current (Continuous) milliamps
Forward Current (Peak) amperes
(Pulse width 1 p.sec. 300 pps)
·Derate 1.33 mWrC above 25°C ambient.
OUTPUT DRIVER
Off-State Output Terminal Voltage 400 volts ,...------,

(Full Cycle Sine Wave, 50 to 60 Hz)
Peak Nonrepetitive Surge Current
100
1.2
milliamps
amperes
':f=J1 til
2
I ..... .
...
I 6
1-05 DO NOT
Pin 5 is
substrate
(PW =10 ms, DC =10%) I I CONNECT

3~ 4
Total Power Dissipation @ TA = 25°C --300 milliwatts L _____ .J
MILLIMETERS INCHES
SYMlOL NOTES
MIN. MAX. MIN. MAX.
A 8.38 cl. 8.89 .330 J.350
. TOTAL DEVICE B 7.62 REF. .300 REF. 1
C - 8.64 - .340 2
D .406 .508 .016 .020
Storage Temperature -55°C to +150°C E - 5.08 - .200 3
Operating Temperature ~40°C to +100°C F 1.01
2.28
1.78 .040
.090
.070
.110
G 2.80
Lead Soldering Time (at 260°C) 10 seconds H - 2.16 - .085 4
J .203, .305 .008 .012
Surge Isolation Voltage (Input to Output) K 2.54 - .100 -
5656 V(peak) 4000 V(RMS) M - 150 - 150
N .381 - .015 -
Steady-State Isolation Voltage (Input to Output) P - 9.53 - .375
R 2.92 3.43 .115 .135
5300V(peak) 3750V(RMS) S 6.10 6.86 .240 .270
NOTES:
~ Covered under D.L. component recognition program, reference file E51868 1. INSTALLED POSITION LEAD CENTERS.
SEATING PLANE.
4. FOU R PLACES.
352
I GE3020, GE3021, GE3022, GE3023 I
individual electric characteristics (25 0 C)
EMmER SYMBOL TYP. MAX. UNITS
Forward Voltage VF 1.2 1.5 volts

(IF = 10 mA)

(VR = 3V)
Capacitance q 50 - picofarads
(V = 0, f = 1 MHz)
DETECTOR See Nole 1 SYMBOL TYP. MAX. UNITS
Peak Off-State Current VORM = 400 V IORM - 100 nanoamps

Peak On-State Voltage ITM = 100mA VTM 2.5 3.0 volts
Critical Rate-of-Rise of Oif-State Voltage Yin = 30 V(RMS) dv/dt 10.0 - volts / p.sec.
(See Figure 1)
Critical Rate-of-Rise of Commutating lload = 15mA dv/dt(C) 0.15 - volts / p.sec.
Off-State Voltage Yin = 30 V(RMS)
(See Figure 1)
Critical Rate-of-Rise of Off-State Voltage Yin = 120 V(RMS) dv/dt 6.0 - volts/ p.sec.
JEDEC conditions
coupled electrical characteristics (25 0 C)

IRED Trigger Current, Current Required to Latch Output GE3020 1FT ' - 30 milliamps
(Main Terminal Voltage =3.0V, RL =1500) GE3021 1FT - 15 milliamps
GE3022 1FT - 10 milliamps
GE3023 1FT 5 milliamps
Voltages must be applied within dv/dt rating.
+ Rift 6
~
Vee Vee 120n
. OV
- 2
OUT
5
ING+sumM
/ - COMMUTAT
dv/dt dv/dt
3 4
RL
2K
FIGURE 1. eIY/d! - TEST CIRCUIT
353
SOLI 0 STATE
@ D ©ELECTRONICS
Photon Coupled Isolator Gi: PS2001 SYMBOL
MILLIMETERS I INCHES
NOTES
Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor MIN. MAX. MiN. MAX.
A 8.38 ,I ,8.89'\ .330,1 . . 350
B 7.62 REF. .300 REF. 1
The General Electric GEPS2001 is a gallium arsenide, infrared emit- C - 8.64 - .340 2
D .406 .508 : .016 .020
ting diode coupled with a silicon photo-transistor in a dual in- E - 5.08 - .200 3
line package. F 1.01 1.78 .040 .070
.110
G 2.28 2.80 .090
H - 2.16 - .085 4
absolute maximum ratings: (2S0C) J .203 .305 .OOB .01i
K 2.54 - .100 -
M - 15' - IS"
Power Dissipation
Forward Current (Continuous)
*100
60
milliwatts
milliamps \
P'
R
S
-
.2.92
6.10
J 9.53
3.43
6.86
-
.115
.240
.375
.135
.270
NOTES:
Forward Current (peak) 3 ampere 1. INSTALLED POSITION LEAD CENTERS.
~
(Pulse width l#Lsec 300 P Ps) 2. OVERALL INSTALLED DIMENSION.
Reverse Voltage 5 ,volts 3. THESE MEASUREMENTS ARE MADE FROM THE
' - - - - - - _ - - - - - ' U~~\

SEATING PLANE.
*Derate 1.33mW/oC above 25°C ambient. 4. FOUR PLACES.
PHOTO-TRANSISTOR TOTAL DEVICE

Power Dissipation **150 milliwatts '.
VCEO ' 30 VGlts Operating Temperature -55 to 100°C
VECO 7 volts Surge Isolation Voltage (Input to Output).
Collector Current (Continuous) 100 milliamps 2500V(peak) 1770 V(RMS)
"Derate 2.0mW/oC above 25°C ambient.

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-TRANSISTOR MIN. TYP. MAX. UNIT$

(IF =20mA) (Ic = lOrnA, IF = 0)
=
(Ic 100#LA, IF = 0)
Reverse Current - 2() microamps Breakdown Voltage - V(BR)ECO 7 - - volts
(VR =4V) (IE = 100#LA, IF = 0)
Collector Dark Current - IcEO - 5 100 nanoamps
(VCE = lOY, IF = 0)
Capacitance 50 - picofarads DC Current Gain hPE - 400 -
(V = O,f = IMHz) (VCE=5V" Ic=4mA)

DC Current Transfer Ratio (IF = 20mA, VCE = 5V) 30 - - %

Saturation Voltage - Collector to Emitter (IF = 20mA, Ic =2mA) - 0.1 0.3 volts
Isolation Resistance (Input to Output Voltage = 1000Voc ) . 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = O,f= IMHz) - 0.8 2 picofarads
Switching Speeds: Rise/Fall Time (VCE = 10V, IcE = 2mA, RL = lOOn) -' 5 - microseconds
Rise/Fall Time (VCB = 10V, ICB =50#LA, RL = lOOn) - 300 - nanoseconds
354
IGEPS20011
10 2.0 NORMALIZED TO
~
VCE"OV
z 'F=20mA
UJ
II:
II: ./
J...-' I--' ~ TA25" C
UJ
~ a:
(.)
~
~ 1.0
1/ a:
(ho
10--
'F=20mA
Il.
~
~
./ " NORMALIZED TO- f- f-- t-
~
--
a.
-
--
0 VCE='O V f - f- ~
0
UJ V 'F= 20mA I
~
o I F=10mA
N
::::;
c(
/
V c
UJ
r---
'a:
:e 0.1 N
::::;
0
z / «
:e
rz:
'F=5mA
'Ii! o
u
I 2
'0
...
~ ~
r---- t--
0.Q1
II _0
O. I
10 100 55 15 25 65 100
' F - INPUT CURRENT - mA TA- AMBIENT TEMPERATURE-"C
OUTPUT CURRENT VS. INPUT CURRENT OUTPUT CURRENT VS. TEMPERATURE
1000 10
".-
100
/. ,,"'" ~
z
UJ
// ~mA
II:
c( II:
E
~
, ~
U
~ V
I.....--
10 I IF "20JA
-
2 ~
/
UJ IL ./
a: !; /
rz:
~
(.)
o
o I1,omA-
0
rz:
1.0
V
UJ
7 [,7/ V j,......--' .
-
N
~ ::::;
II:
0
IL
Ql
«
~ o.I ITI 7..- IF =!SmA
/
o
I z T
I
-"- Tl NORMALIZED TO:
.01 ~ VCE = 5V,
<>
III /
/
H' . IF =20m'.
.001
o .5 1.0 1.5 2.0 .0 1
.1
rrr II
10 100
VF- FORWARD VOLTAGE"': VOLTS
VCE - COLLECTOR TO EMITTER VOLTAGE-VOLTS
--
\0 100
en
UJ
-
::E I'"'--..
i=
v
~
u.
u.
0
~
~
~
'" ~ r-
~ r-...
t-- t-RL-u<n
c(
z
.:t
~
UJ V
~
..........
~ cz
..,c: c(
10
t'--
r"- r-.... "",
r-..... ~IO
/
" .....'" .......... '"
2
0 ~
0 Il.
c
2
.!' a: ........ ~
:::>
V
t'..... r-.. t---....... ,
o
~
~
r-
NORMALIZED TO
VCE-IO VOLTS RL-,oon- f - I -
V VCB"IOV
...... t---
c
UJ
N
::::;
r--
' CEO"2mA
ton' t off - 3JoLHC
r---.. 11
RL= 10
o
ID
.? V
I
o
RL" loon
201 I I II
I 10 10 100 10 100
'CEO OUTPUT CURRENT· mA 'F - INPUT CURRENT- mA
SWITCHING TIMES VS. OUTPUT CURRENT OUTPUT CURRENT (leBO) VS. INPUT CURRENT
355
SOLID STATE
@DCOELECTRONICS
Photon ·Coupled Isolator GFH600
Ga As Solid State Lamp & NPN Silicon Photo-Transistor
The General Electric GFH600 consists of a gallium arsenide infrared
emitting diode coupled with a silicon photo transistor in a dual in..Jine
package.
FEATURES:
• High DC current traDsfer ratio
absolute maximum ratings: (25°C) (unless otherwise specified) 'Nr----'

2
I
I
I
I
6
5

S()004- L __ J 4
Power Dissipation - TA rnilliwatts

Forward Current (Continuous) milliamps MILLIMETERS INCHES
SVI'IIIOl NOTES
Forward Current (Peak) ampere MIN. MAX. MIN. MAX.
(Pulse width Ips, 300 P Ps) A 8.38 .la.89 .330.1. :350
B 7.62 REF. .~oo REF. 1
Reverse Voltage . 6 volts C - 8.64 - .340 2
D .406 .508 .016 .020
E - 5.08 - .200
.070
3
F 1.01 1.78 .040
G 2.28 2.80 .090 .110
H - 2.16 - .085
.012
4
J .305 .008
-
K
M
N
,;' I
.381
-
IS"
-
.100
-
.015
IS"
,.-
PHOTO·TRANSISTOR -' . 9.53 - .375
Power Dissipation - TA **150 .milliwatts

P
R
5
2.92
6.10
I 3.43
6.86
.115
.249
.1~5
.270
VCEO '/0 volts NOTES:
VCBO 70 volts 1. INSTALLED POSITION' LEAD CENTERS.'
V ECO 7 volts
1 THESE MEASUREMENTS ARE MADE FROM THE
Collector Current (Continuous) 150 milliamps .TING PLANE.
R PLACES.
TOTAL DEVICE
4OOO\'(peak) 2800V(RMS)
356
IGFH6001
Forward Voltage - VF 1.65 volts Breakdown Voltage - V(BR)CEO 70 - - volts
(IF =60mA) (Ic= 10mA, IF =0)
(Ic = lOOIlA, IF. =0)
Reverse Current - IR - 10 rnicroamps Breakdown Voltage - V(BR)ECO 7 - - volts
(VR = 3V) (IF = lOOIlA, IF = 0)
(VCE = IOV, IF = 0)
Capacitance - CJ - 100 picofarads Capacitance - CCE - 2 - picofarads
(V = O,f = I MHz) (VCE = 10V, f = I MHz)
coupled electrical characteristics (25 °C) (unle~s otherwise specified)

DC Current Transfer Ratio (IF = lOmA, VeE = 5V)
GFH600 I 63 - 125 %
GFH600 II 100 - 200 %
GFH600 III 160 - 320 %
Saturation Voltage - Collector to Emitter (IF = lOmA, Ie = 2.5mA) - - 0.3 volts
Isolation Resistance (VIO = SOOVDc) (See Note 1) 100 -, - gigaohrns
Input to Output Capacitance (VIO = O,f = I MHz) (See Note I) - - 2 picofarads
Turn-On Time - ton (Vec = 10V, Ie = 2mA, RL' = lOOn) (See Figure 1) - 5 10 microseconds
Turn-Off Time - toft' (Vce = lOV, Ie = 2mA, RL = lOOn) (See Figure 1) - 5 10 microseconds
Not. 1: Tests of input to output isolation current resistance, and capacitance are performed with the input terminals (diode) shorted together and
the output terminals (transistor) shorted together.
~--T""OUTPUT
TEST CIRCUIT VOLTOGE WAVE FORtIS
Adjust Amplitude of Input Pu_ for Output (leI of 2 mA

FIGURE 1
357
1000
, "
,,
,
100 I
110
I
/ •
-I.
~
\:.
.-1.I'"' r-.....
/ i t--
Ii
ff
~o. I
I.0
II
II r'
~-1.s
0
, ....... ~
1...
.0 I
I
/ S
~
•
-0.
.00 I 0 .5
/ 10 III 20 .2 1t.8.11.0
I,· FORWARD CURRENT·ntA
4 • • 10.0 20 40 to eo 100
VF -FOfIWARD VOLTAGE - VOLTS
1•. INPUT CHARACTERISTICS 2. FORWARD CURRENT TEMPERATURE COEFFICIENT
...
.......
c''''
~ €.IO¥'
... I"/V
/IV ...-
",...ov
~ .,._Iew
iI , t/' / II ,.. I......:: t7 V
fJ/ // V
I
j
'0'
1;/ NOMMUZD 10:
.... IOY
Ta .,.zs-c
I, -0
== I
j
10'
l/,
7
rJ V/ ....,.. -- r-
NORIIIMJIEDTO:
TA -1IIPC
, II '.0
1/ I, -0
0.' . 0.'
100
-..no .....
Yco°IO~
1, -10_ 50
10
S
~~
1,-
10
5
/
zsJ
IF' IOnIA
---
-
I i' ~ ~~ I II ,, ,....loot·
i i
0.0
// t;:. ~ "'j ,
I CIS
".S"'" V ,'/
~~
Vf
.5
~
;j
0.0
.os 1//
I
_I".j"'" .1
V ,
1/
,rl", ' /, -+--- ----
, I ,"
r-t"JmA
." 1000C t---

".1"",
V3~
I
,,
I!I ff , 1I I
,
- ~ ~ Ii,
I
.00 .0
"i~ 1/ I
-"or
1/
.00II ,
.... ,
I
000
10 000 .00.I 01
l/ "
.02 .04.0& .08 0.1
//
VeE - COLLECTOR TO E~R VOLTAGE - VOLTS
2 .4.6.8 1.0 2D
358
10 1000
I
1.0
• -.IZIDTOo
YcI'1OY
1, -10_ /'
..-- ~
100
100
YCI-IOY ~r
i.;' 10 V
",.
/' ",/
I
L ./
V
/~
I
/
1
./ /'
.OCI
_I ./
V D. /'
/
VI-"
V V~
.1 10 40 10. 10 100 .l! 10 40 10 10 100
7. OUTPUT CURRENT va INPUT CURRENT 8. OUTPUT CURRENT - COLLECTOR TO BASE

va INPUT CURRENT
• 1,·-.-f-
•
'.0
•
......
...... -- r- .0
..
V
1<".... -
UJ..
-1_-
f-
..
--
l-
• ~
.. I /' II
t-- .. 1/ I
• ~ ... =F
r--
.I
--~ I ...
I I
~~
I .. -.o.a
,,,._ f-.
.04
-
NORMALIZED TO:
.... IOY ~
~ .....
GOO
... I I 1,-,-
"'r...
I, -101M
r--
.01
110 'IS ... ... ...,
9. OUTPUT CURRENT va TEMPERATURE '0. OUTPUT CURRENT va BASE EMITTER

RESISTANCE
r--....
i'...
~ --
0,
r-I-
I'-.
- -RL·IKII
10
a
NDRMAUZEO tOIl FO!'''-1OIItA
"i-..
I
I
.........
"cc:' 1OY
--
j r-t-I.
i'-r'- •
... NORMALIZED ' . FOIt r,. ~ ~
.-- !-
f-
f-
NORMALIZED TO:
VCE '10 VOLTS
... ·faI, .:s,.-

leEo· 2mA
r--
"I'-.
.......
.........
, r---...
'"
. . . r--.... RL·IDOII
1"' .....
-~ • /' Y
"""'..t....
V
V
,.
..... r--
NORMAuzm ..., FOR I, ·DftA ,,-oeD

NOMIIALIZED TO:
RL'IOOII
, I l"- RL'IOII zA / 1, -IOMA
I
. MCIIIMALIZED '1If' fDIIt ., • lOlItA
. . -"" ·~MC.
,
I I
I I
OJ .. .2 ~ .6.81.0 2 46810 20 40 10 80 100 00 100
ICEO-OUTI'IIT CURRENT-IlIA
" . SWITCHING TIMES va OUTPUT CURRENT '2. SWITCHING TIME va RaE
359
SOUDSW"E
@D© ELECTRONICS
. . .
Photon Coupled Isolator GFH601

Ga As Solid State Lamp & NPN Silicon Photo-Transistor
The General Electric GFH601 consists of a gallium arsenide infrared
emitting diode coupled with a silicon photo transistor in a dual in-line
package.
FEATURES:
• High isolation vottage
• 1/0 compatible with integrated circuits
absolute maximum ratings: (25°C) (unless otherwise specified) I~r----'6

I I
2 ,
INFRARED EMITTING DIODE I
:so-L
L __ J
4
Power Dissipation - TA *100 milliwatts
Forward Current (Peak) 3 ampere
(Pulse width Ips, 300 P Ps)
Reverse Voltage 6\ volts MILLIMETERS INCHES
NOTES
SYMBOl.
MIN. MAX. MIN. MAX.
*Derate 1.33 mwtC above 25°C
A 8.38 I 8.89 .330 .1 .. 350
B 7.62 REF. .300 REF. 1
C
D
-
.406
8.64
.508
I -
.016
.340
.020
2
E - 5.08 - .200 3
F 1.01 1.78 .040 .070
G 2.28 2.80 .090 .110
PHOTO-TRANSISTOR H
J
-
.203
2.16
.305
I -
.008
.085
.012
4
K 2.54 - .100 -
Power Dissipation - TA **ISO milliwatts M - 15' - 15'
VCEO '/0 volts. N .381 - .015 -
VCBO P - 9.53 - .375
70 volts R 2.92 I
I
3.43 .115 .135
VECO 7 volts S 6.10 6.86 .240 .270
Collector Current (Continuous) ISO milliamps NOTES:

SEATING PLANE.
4. FOUR PLACES.
TOTAL DEVICE
<fu YDE APPROVED TO:
883 V~E 0883/6.80 .
Lead Soldering Time (at 260°C) 10 seconds ~E 0110/11.72
Surge Isolation Voltage (Input to Output). V DE 0804/1.83
5300V(peak} 3750'V(RMS} VDE 0806/8.81
CERTIFICATE #30415
.~ Covered under U .L. component recognition program, reference file E51868

@ VDE Approved to 0883/6.80 0110b Certificate :# 35025. .
360
IGFH601}

Forward Voltage - VF 1.65 volts Breakdown Voltage - V(BR)CEO 70 - - volts
(IF = 60 rnA) (Ic =lOrnA, IF = 0)
(lc = lOO",A, IF. = 0)
Reverse Current - IR - 10 microarnps Breakdown Voltage - V(BR)ECO 7 - - volts
(VR =6V) (IF =100",A, IF =0)
Collector Dark Current - ICEO - 2 50 nanoarnps
(VCE =10V, IF = 0)
Capacitance - C1 - 100 picofarads Capacitance - CCE - 2 - picofarads
(V = O,f = 1 MHz) (VCE =10V, f= 1 MHz)

DC Current Transfer Ratio (IF = lOrnA, VCE =5V) GFH601 I 40 -- 80 %
GFH601 II 63 125 %
GFH601 III 100 - 200 %
GFH601 N 160 - 320 %
Saturation Voltage - Collector to Emitter (IF = lOrnA, Ic =2.5mA) - - 0.4 volts
Isolation Resistan.ce (VIO = 500Voc ) (See Note 1) 100 - - gigaohms
Input to Output Capacitance (VIO = O,f = 1 MHz) (See Note 1) - - 2 picofarads
Tum-On Time - ton (VCC = 10V, Ic = 2mA, RL = lOOn) (See Figure I) - 5 10 microseconds
Tum-Off TIme - tolr (VCC = 10V, Ic =2rnA, RL = lOOn) (See Figure 1) - 5 10 microseconds
Note 1: Tests of input to output isolation current resistance, and capacitance are performed with the input termirials (diode) shorted together and
the output terminals (tranSistor) shorted together.
~-~OUTPUT
"cc
TEST CIICUIT
Adjust Amplitude of Input Pus. for Output (Ie) of 2 mA
FIGURE 1
361
IGFH60'l1 TYPICAL CHARACTERISTICS
1000
,, "
,
1 10
/ I
!1
f
10
.
.=.0. 1
..
I
/
II
II I:I-I
.""'- i'..
I"-
............
...... ......
.01
/
I
-I
-I
~
I
.II
/ 10 III 20 .. ~ • • LO z· 4.1100 10 40 10 10 DO
.v, - FOR_RO WLTACIE - VOLTS .1,-_-.-"",
1. INPUT CHARACTERISTICS 2. FORWARD VOLTAGE TEMPERATURECOEFFICIENT
~
.....·.ow
1Woo·...
rJV
~7 ~ ::::
'10....
II ~V
I...
I
;./. V V
rJ / //V
I... Vi rl .......
....
........1ID1Q;
~ = I .I.
---
Ta ,,:"-': 10'
j N
j /
.
VI
I ...
Y' /
/ .... '10....
' •• ...-c -- -
0.. .
3. DARK ICED CURRENT VS TEMPERATURE
. ... .
4. ICBO VS TEMPERATURE
'ID . -
100
110
10
II
7 ,, ,-~ ---
/'
L.!,,1OtnA -
,'/
i
,
5 "L
211'1
1
V ,
,'!/
~
,
' / --t'I...,r-----
V
•
• .1-... .---
!OO"C
,, 7 , "
V3~ ,,
I
V ,
.01
, I ,
,005 /' ,~ / I 'I
...... '
. . ._10 _ .......--WIn . .001.oJ ,OR

~ ,,'
.00.os ,08 0.1

/1 .2 .4.S.8 1.0 2D
VCl - COLLECTOR TO EMITTER VOI.TAGE - VOIl'S
362
IGFH601]
TVPICAL CHARACTERISTICS
10
I I
--,.,..
w.·m
1,·- /""
~ - - 100
"..DV ~~
." "
,.
1.0
i...o'
100
V
I V
10
;'/
I.
I~
,.
L
1/
~V
L
V
,
flO
J.
•
• /'
/
./
~;'
J
.oGI
.-
/ J /
V
./
•/'" / '
.. .4 . . . 1.0 1."10
I,·-.r CUIIIIINr·OIA
10 40 &IODO .. .4 .I . . . 1,· _
I _
• •·,..
• 10 10 40 10 10100
7. OUTPUT CURRENT VS INPUT CURRENT •• OUTPUT CURRENT - COLLECTOR TO BASE

VI INPUT CURRENT
•
.-.... r-- .i,."-+-
--
~..... -f-
r
.,
V UL
..
I .0
.. _ -'--r-
•
..
r
- -- i
I
I
.1
I
1/
/ II
I
.~"=f=
.I
r-- ~
- ... ) I I
~~
I"'-f-
.1"--
.04 -..
-
...... ::::::..... , •I I 1,- ....
...Ta'j
-
IilDMllUIID TO:
.GO .... 100 • ••..lrI_=....... -

•• OUTPUT CURRENT VI TEMPERATURE 10. OUTPUT CURRENT VI BASE EMlnER
RESISTANCE
10
••"-.,.
i
~
4
"~
~
r-- r-f-
r-..... 'KII
I' .I
~ZID
~
t.roar,.-IOM .... -
'!:c ....
I r-....
t5
2 .........
r--- 1"I"'- .... ............... iI I
.... ..........D ... ~r,..10.&
~
--- -I-
I .•
'.0
i! ,. -
! .•,-
_UZEDlO:
"" ·10 VOL'lS
,"0. 1 IlIA
.s,.-
.......
.....
..........
..........
.......
.......
i"'- .......... I V
'""'-t.... ,..,
V
-,,-,""
...
V .... twzlD .... _,,,_
---
i t<- -...-
... ·,",1 RL'1OO11 - - _10:
/
I
1" ...... .... ooA
.... ·10011
............ .... ·1011
I I I / .........
I, -10M
~-,
.2
....
I
----..
I I '
.1 II . . . 1.0
11. SWITCHING TIMES VS OUTPUT CURRENT

2 •
I8810
ICIO'O\mIUf CURIlENI'·1IIA
20 40 101(1100 ID zo
...
zo
12. SWITCHING TIME VS RBE

.KID 100
-
363
SOLIDsmfE
@ 0 (0 ELECTRONICS
Photon Coupled Isolator MCA230, MCA231, MCA255
GaAs Infrared Emitting Diode & NPN Silicon Darlington Connected Phototransistor MILLIMETERS INCHES
The General Electric MCA series consists of a gallium arsenide ~ SWSOL
MIN. MAX. MIN. MAX.
NOTES
infrared emitting. diode coupled with a silicon photo-darlington • A 8.38 _I 8.89 .330.1 .350
B 7.62 REF. .300 REF. 1
amplifier in a dual in-line package. C - 8.64 - .340 2
1M Covered under U.L. component recognition program, reference file E51868 0 .406 .508 .016 .020
E - 5.08 - .200 3
absolute maximum ratings: (2S0C) F
G
1.01
2.28
1.78
2.80
.040
.090
.070
.110
H - 2.16 -
INFRARED EMITTING DIODE .085 4
J .203 .305 .008 .012
Power Dissipation *100 milliwatts K 2.54 - .100 -
M - 15' - 15'
FOrWiml Current.(Continuous) 60 milliamps N .381 - .015 -
(Pulse width 300j.tsec,
P
R
S
-
2. 92
6.10
1 9.53
3.43
6.86
-
.115
.240
.375
.135
.270
2 % Duty Cycle) 0.5 amperes

\ -1.:J HI- --j FI--
-----, 1 I I I I
NOTES:
I I 6 R 1. INSTALLED POSITION LEAD CENTERS.
(Pulse width 1j.tsec, 300Hz) 3 amperes <>p~ t P I 2. OVERALL INSTALLED DIMENSION.
Reverse Voltage 3 volts 2 ~ 5 ~ " 3. THESE MEASUREMENTS ARE MADE FROM THE
0-4- G I' SEATING PLANE.
*Derate 1.33mW1°C above 25°C ambient. 3 .L_ _ _ 4 -11- 0 4. FOU R PLACES.
DARLINGTON CONNECTED PHOTO· TRANSISTOR TOTAL DEVICE

Power Dissipation **210 milliwatts Storage Temperature -55°C to -+ 150°C
V CEO ....:. MCA230/MCA231 30 volts Operating Temperature - 55°C to + 100°C
-MCA255 55 volts Lead Soldering Time (at 260°C) 10 seconds
Vcoo - MCA230/MCA231 30 volts Surge Isolation Voltage (Input to Output)
-MCA255 55 volts
V EBO 8 volts
Collector Current (Continuous)
-Forward 150 milliamps 2125V(pe&k) 1500V(RMs)
Collector Current (Continuous)
-Reverse 10 milliamps
**Derate 2.8mW/OC above 25°C ambient.
individual electrical characteristics: (2S0C)

EMITTER TYP. MAX. UNITS DETECTOR MIN. TYP. IMAX. UNITS
Forward Voltage 1.1 1.5 volts Breakdown Voltage - V (BR)CEO
(IF = 20mA) (Ic = 1.0mA, IF =0) - MCA255 55 - - volts
MCA230/MCA231 30 - - volts
Breakdown Voltage - V (BR)CBO
Reverse Current - 10 microamps (Ie = lOlA-A, IF =0) - MCA255 55 - - volts
(VR = 3V) MCA230/MCA231 30 - - volts
Breakdown Voltage - V (BR)EBO 8 - - volts
(IE = lOlA-A, IF = 0)
Capacitance 50 - picofarads
Collector Dark Current - I CEO
(V = 0, f = 1MHz) (VCE = lOY, IF = 0) - - 100 nanoamps
coupled electrical characteristics: (2S0C)
DC Current 1hmsfer Ratio - (IF = lOmA, VCE = 5V) MCA230/MCA255 100 - - %
MCA231 200 - - %
Saturation Voltage - Collector to Emitter - (IF = SOmA, Ie = SOmA) MCA2301255 - - 1.0 volts
-(IF = lmA, Ie = 2mA) MCA231 - - 1.0 volts
- (IF = SmA, Ic = 10mA) MCA231 - - 1.0 volts
- (IF = 10mA, Ie = SOmA) MCA231 - - 1.2 volts
Isolation Resistance (Input to Output Voltage = 500VDC) 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = 0, f = 1MHz) - - 2 picofarads
Switching Speeds:
, On-Time -(VCE = 5Y, RL = 1000, IF = lOmA) - 5 - microseconds
Off-Time - (Pulse width :S 300j.tsec, f:s 30HZ) - 100 - microseconds

I MCA230, MCA231, MCA255 1
100 10
Ito 04.0 mA
10
--
I""""
--
.-"'" IF" !.OmA
1.0 I
V ~
/' I
I "IF~-
til ~
!:! ./ ~
oJ
NORMALIZED TO:
; .01 / I
VeE" !IV
~I
IF "'iliA NORMALIZED TO:
VeE 0 5V
: .00 I I,.otmA
...u TA 0 +2S·C
.000 I
.1
I I
1.0 10 100 -15 25 65 100
I" -INPUT CURRENT -iliA TA - AMBIENT TEMPERATURE _·C
1.000
,,- 10
1,
100
//
/
~"
!E
II!
II::
too-" - t-"" J......o-'" t(...000'"
=4.0, III A 1-
~I.ot
;:)
-
U
I-
Z 10 I- 1.0 I-
/
IIJ ;:)
a:: G.
a:: I-
~
u
~
o ~ IF"·SmA_ i -
1.0 o
Ii!
!e V IIJ
...
!:!
c [I
O. I :I I
a::
I
II.
.0 I / ~,
...
o
Ij
NORMALIZED TO:
VeE = SV
I
~
/ LO 1.5
VF - FORWARO VOLTAGE - VOLTS
2.0
.0 I
.1
J
1.0 10
J:F • tOlnA
100
100 '\
'\ LOAD RESISTANCE
Ion -'
I NORMALIZED TO - I- 10 5
-'
c
e, \ I VCE"'OV
RL",oon -
Z
IIJ
a::
./
I- loon ICEOolOlllA ~ 10 4
Z 10 \ u
i
;:) "o~ 105
,/
,/.
,,\\
(J
!o
o .. /
IIJ
-'
9C '02
lj 1.0
\\ \10000
:I
a::
... '\ ~ 10 I
,
.L NORMALIZED TO:
VCE = 10V
'1\
I\~
.o
...u 1.0 V
.L IF' 0
TA =+25°C
O.I I
0.01 0.1 I 10 100 '0 +~ +~ +~ +~ +100
NORMALIZED SWITCHING SPEED TA -AMBIENT TEMPERATURE -'C
'd+ 'r+'.+'1
365
SOLIDS1ME
@ D ©ELECTRONICS
Photon Coupled Isolator MCS2, MCS2400
GaAs Infrared Emitting Diode & Light Activated SCR SYMBOL
MIL;LIMETERS +-_IN_C,HE_S---l NOTES
MIN. MAX. MIN. MAX.
The General Electric MCS2 and MCS2400 consist of a gallium
arsenide, infrared emitting diode coupled with a light activated A
B
8.38 I 8.89
7.62 REF.
I .330 J .350
.300 REF.
- 8.64 - .340
silicon controlled rectifierin a dual in-line package. C
D 406 508 .016 .020
~:~~'I .~o :~~

E 3
'" Covered under U.L. component recognition program, F 1:01
2.28 2.80 .090 .110
reference file E51868 G
H - 2.16 - .085 4
J .203 .305 .008 .012
absolute maximum ratings K
M
2.54 -
15'
.100 -
15"
N .381 - .015
INFRARED EMITTING DIODE P - 9.53 .375
R 2.92 ~:J .115 .135
Power Dissipation *100 milliwatts S 6.10 ".86 .240 .270
Forward Current (Continous) 60 milliamps
NOTES:
(lOO",sec 1 % duty cycle) 2. OVERALL INSTALLED DIMENSION.
*Derate 1.33mW/oC above 25°C ambient. SEATING PLANE. 4. FOUR PLACES.
TOTAL DEVICE
PHOTO-SCR Storage Thmperature Range - 55°C to 150°C
Off-State and Reverse Voltage MCS2 200 volts Operating Temperature Range - 55°C to 100°C
MCS2400 400 volts Soldering Temperature (1116" from' case, 10 seconds) 260°C
Peak Reverse Gate Voltage 6 volts Total Device Dissipation 450 milliwatts
Direct On-State Current 300 milliamps Linear Derating Factor (above 25°C) 6.0mW/oC
Surge (non-rep) On-State Current 10 amps Surge Isolation Voltage (Input to Output).
Peak Gate Current 10 milliamps 3550 V(peak) 2550V (RMS)
Output Power Dissipation **400 milliwatts Steady-State Isolation Voltage (Input to Output).
*"'Derate 5.3mW/oC above 25°C ambient. 3150V(peak) 2250V (RMS)

Forward Voltage VF 1.1 1.5 V Peak Off-State Voltage - VnM MCS2 200 - V
(IF = 20mA) ROK = lOKO, TA = 100°C, In= 15OI'A) MCS2400 400 - V
Peak Reverse Voltage - VRM MCS2 200 - V
(TA = 100°C, IR = 15OI'A) MCS2400 400 - V
On-State Voltage - VT - 1.3 V
(IT = lOOmA)
Off-State Current - In MCS2 - 2 "A
Reverse Current .IR - 10 ",A (Vn = 200V, IF=O, ROK=27K)
(V R = 3V) Off-State Current - In MCS2400 - 2 ",A
(V n =400V, IF=O, RoK=27K)
Reverse Current - IR MCSi. - 2 "A
(V R=200V, IF=O)
Reverse Current - IR MCS2400 - 2 ",A
(V R=400V, IF=O)
Capacitance 50 - pF Holding Current - IH 10 500 "A
(V = 0, f = IMHz) (V FX =50V, RoK=27KO)

MIN. MAX. UNITS
Input Current to Trigger
VAx. = 100V, RoK = 27KO 1FT .5 14 milliamps
Isolation Resistance (Input to Output) Vio = 500Voc rio 100 - gigaohms
Tum-On Time - VAK = 50V, IF = 30mA, ROK = lOKO, RL = 2000 ton
I
- 50 microseconds
Coupled dv/dt, Input to Output 500 - volts/microsec.
Input to Output Capacitance (Input to Output Voltage = o,r = IMHz) - 2 picofarads
366
IMCS2, MCS2400 I
I. ---.--.--
_IIAUZEDTO
VA. -SOY
110 10
"eK'IOK
If-- f-- "GK ·300A
TA -21-c
•
ie • 10 - RGK -3001\.
0
IK
I
ia
'.0
IK
I
- "-
-
2
I
.8
10K I
i .7•
.8
• 27.
• IK
, ...... 0
.OK
2
NORMALIZED TO
.I
I 10 50 K)() 200 400 VAK -SOY
RGK -10K
"AK -ANODE TO eATHODE VOLTAGE-VOLTS TA ·a-e
.I
60 -40 20 20 40 60 80 tOO 120
TA -AMaIENT TEMP[RATlRE·-C
VS. ANODE·CATHODE VOLTAGE
VS. TEMPERATURE
00 NORMALIZED TO
VA. -50\1
RGK -10K
T '25'C
0
0
"'" F:::: t-
1
f•
e
10
I,
......
RGK -300""
IK
0
I
NORMALIZED TO
'~
~ .. YAK·~OV
RGKslOK 2
.........
~ ~
~II/'
TA -Hac:
l
r---.... 10K
.1
...... "'-
I PERCENTILE .8
~ ..... •
""""" .0
~
2
.0
J
I 4 I I 10 20 40 110 100 200 400 1000
PUL. WlDTH- MICRO SECONO$

VS. PULSE WIDTH
-00 -20 2
TA - '''BI[NT TEll PERATURE • "C
•

V
.0
22
1 100
10
I
"
\
\ , VA.· !OVOLTS
'0" -'dt,:sIJ1HC
I• I
I
+'r
"
,
10
1\
."
"GK"· 1\
12 f--- :,..... 0. I I
10
~\..
~ t--....
•
•
~ ~.
56K -- -
--= - -.
........ .0 I
0
- 0:: ~
• 0 ..
I
1.0 2.0 3.0
10 20 110 40 110 10 10 10 v , - - \IOLT_-VOUI
I, -INPUT CURRENT - MILLIAMPERES
FIGURE 5. TURN·ON TIME VS. INPUT CURRENT IF VS. VF
367
sou0 STArE
@D © ELECTRONICS
Photon Coupled Isolator MCS21, MCS2401
GaAsInfrar~d Emitting Diode" .Light Activated SCR MILLIMETERS INCHES
SVMIIOL NOTES
The General Electric MCS21 and MCS2401 consist. of a gallium MIN. MAX. MIN. MAX.
arsenide, infrared emitting diode coupl~ with a light activated -t---="i::!'!II. A 8.38 .1.8.89
7.62 REF;
.330 J .350
B .300 REF. 1
silicon' controlled rectifier in a dual in-line package. C - 8.64 - .340 2
0 .406 .508 .016 .020
-Covered under U.L. component recognition program, E - 5.08 - .200 3
F 1.01 1.78 .040 .070
reference fileES 1868 G 2.28 2.80 .090 .110
H - 2.16 - .085 4
J .203 .305 .008 .012
absolute maximum ratings K
M
2.54
-
-
15"
.100
- 15"
-
P - 9.53 - .375
Power Dissipation *100 milliwatts R
S
2.92
6.10
I 3.43
6.86
.115
.240
.135
.270
Forward Current (Continous) 60 milliamps
Forward Current (Peak) 1 ampere NOTES:
(lool'sec 1 % duty cycle) 2. OVERALL INSTALLED DIMENSION.
"'Derate 1.33mW/OC above 2,S°C ambient. SEATING PLANE. 4. FOUR PLACES.
TOTAL DEVICE
PHOTO-SCR Storage Temperature Range - 55°C to 150°C
Off-State and Reverse Voltage MCS21 200 volts Operating Temperature Range - 55°C to HlQoC
MCS2401 400 volts Soldering Temperature (1/16" from case, 10 seconds) 260°C
Peak Reverse Gate Voltage 6 volts Total Device Dissipation 450 milliwatts
Direct On-State Current 300 milliamps Linear Derating Factor (above 25°C) 6.0mW/oC
Surge (non-rep) On-State Current 10 amps Surge Isoladon Voltage (Input to Output).
Peak Gate Current 10 milliamps 4OooV(peak.) 30ooV(RMS)
Output Power Dissipation "'*400 milliwatts Steady-State Isolation Voltage (Input to Output).
"''''Derate 's.3mW/oC above 2,S°C ambient. 3500 V(peak) 2500V (~S)
individual electrical characteristics (25 °C) (unless otherwise specified) .

Forward Voltage Vp 1.1 1.5 V Peak Off-State Voltage - VOM MCS21 200 - V
(Ip = 20mA) RoK= 10KO, TA = 100°C, 10= 15OI'A) MCS2401 400 - V
Peak Reverse Voltage - VRM MCS21 200 - V
(TA = lOOoC, IR .::15OI'A) MCS2401 400 - V
On-State Voltage - VT - 1.3 V
(IT = l00mA)
Off-State Current - 10 MCS21 - 2 I'A
Reverse Current IR - 10 I'A (VO= 2ooV. Ip=O, ROK =27K)
(Va = 3V) Off-State Current - 10 MCS2401 - 2 I'A
(V o =4ooV, Ip=O, RoK=27K)
Reverse Current - IR MCS21 - 2 I'A
(VB. =200V, Ip=O)
Reverse Current - IR MCS2401 - 2 I'A
(VR =4ooV, IF=O)
Capacitance 50 - pF . Holding Current - IH 10 500 I'A
(V = 0, f = IMHz) (V Fx =50V, RoK=27KO)

MIN. MAX. UNITS
Input Current to Trigger V AK=50V, RcK=loKn 1FT .20 .milliamps
VAK = looV, RoK = 27KO 1FT .5 11 milliamps
Isolation Resistance (Input to Output) Vio = 500Voc rio 100 - gigaohms
Tum-On Time - VAK = 50V, IF = 30mA, RoK = 10KO, RL = 2000 ton - 50 microseconds
Coupleddv/dt. Input to Output 500 - volts/microsec.
Input to Output Capacitance (Input to Output Voltage = 0, f = IMHz) - 2 picofarads
368
IMCS21, MCS24011
-..-,.
\fuc'-
".IOIC
Ta -WC 1=
•
~ "'K'SODA
- ,.
I•
I!
10
.",' IDA
I
I!
I I
OK I
........
I '.0
i 0
10K
I..
.s:
,"",
.......
"'-
I
j:
A
IT•
II
.2 _1ZED1O
J '0 10100
-_TI_ _'
-
0 \IUI'IOY
",-_10 _ _ _ ..... 10.
TA -aee:
J
-10 -10 0

VS. ANODEoCATHODE VOLTAGE
~
•
VS. TEMPERATURE
_OLIDD TO
.... -
..... 10.
T 'H'C
to
' '" r-.
i
...... IOQA
I ....
10
I! ........
i I '~
IIC
·Iii --
_OlD
I!
_.a'"
".~IOV
i
I
'l~ ........ I'"'-I-
I 'A -15-(
....
10K
Is
L
....... !'iioo,;
i """""
..........
A
-t!-
I.
.a
.!"
J
0 I 4

I
--..".---
110 10 4010 100 _ _ _
Vs. PULSE WIDTH

-'10 -I _I 4i
• --. --::ciO
FIGURE 3. INPUT CURRENT TO TRIGGER _I I 1 1 I I

I I y I
1001
1M
II
r
II I
§
1 l
01
It , \ .... MI_TS
'." -t,t,.I,.
,
t
+t,
..
! ,. ~
......,. 1\
~
I
~'\ "-
" OJ
~ 10
~ r-....
.J
•
I
~ ~. ...- - .01
I
•
I
Ilk
-- -- ..:~
1
.DOl
0.1
10 to lei .a

FIGURE 5. TURN-ON TIME VS. INPUT CURRENT IF VS. VF .
369
5OL.ID SlATE
@ . ©ELECTRONICS
Photon Coupled Isolator MCT2, MCT2E, MCT26
GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor
The General Electric MCT2, MCT2E and MCT26 are gallium MILLIMETERS INCHES
arsenide, infrared emitting diodes coupled with a silicon photo- SYMBOL NOTES
MIN. MAX. MIN. MAX.
transistor in a dual in-line package. A
B
8.38 .1 8.89
7.62 REF.
I .330.1 . . 350
.300 REF . 1
. ,,",Covered under U .L. component recognition program, C - 8.64 - .340 2
D .406 .508 I .016 .020
reference file E5l868 . E - 5.08 - .200 3
F 1.01 1.78 .040 .070
absolute maximum ratings: (25°C) G
H
2.28
-
2.80
2.16
.090
-
.110
.085 4
,~oo
J .305 .008 .012
INFRARED EMITTING DIODe K
I 15·.- .100 -
M - 15·
Power Dissipation *200 milliwatts N .381 - .015 -
P 9.53 - .375
Forward Current (Continuous) 60 milliamps R
S
2.92
6.10
I
3.43
6.86
.115
.240
.135
.270
NOTES:
(Pulse width lpsec 300 P Ps) ~. INSTALLED POSITION LEAD CENTERS.
Reverse Voltage 3 v~lts 2. OVERALL INSTALLED DIMENSION.
*Derate 2. 6mW / °C above 25°C ambient.
SEATING PLANE.
4. FOUR PLACES.
PHOTO-TRANSISTOR TOTAL DEVICE

Power Dissipation **200 milliwatts Storage Temperature -55 to 150°C
VECO 7 volts Surge Isolation Voltage (Input to Output).
Collector Current (Continuous) 100 milliamps MCT2 - MCT26 l500V (peak) 1060V(RMS)
**Derate 2.6mW/oC above 25°C ambient. MCT2E 3S00V(peak) 2500V (RMS)

INFRARED EMITTING DIODE TYP. MAX. UNITS PHOTO-TRANSISTOR , MIN. TYP. MAX. UNITS

(IF = lOrnA) (Ic = lOrnA, IF = 0) \

(Ic = 100pA, IF = 0)
(VR = 3V) (IE = 100pA, IF = 0)
Collector Dark Current - ICEO - 5 50 nanoamps.
(VCE = lOY, IF = 0)
Capacitance 50 - picofarads Capacitance . - 2 - picofarads
(V = O,f= IMHz) (VCE = IOV, f= lMHz)
coupled electrical charactedstics (25°C)

DC Current Transfer Ratio (If = lOrnA, V CE = lOY) MCT2-MCT2E 20 - - %

MCT26 6 - - %
Saturation Voltage - Collector to Emitter
(IF == l6rnA,Ic = 2.0mA) MCT2-MCT2E - 0.1 0.4 volts
Saturation Voltage - Collector to Emitter (IF = 60mA, Ic = 1.6rnA) MCT26 - - 0.5 volts
Isolation Resistance (Input to Output Voltage = 500VDC) 100 - - gigaohms
Input to Output Capacitance (Inputto Output Voltage = 0, f = lMHz) - - 2 picofarads
Switching Speeds: Rise/Fall Time (VCIl = lOV;j~E' = 2rnA, RL = 1000) - ·5 - microseconds
Rise/Fall Time.<yCB = lOY, ICB = 50Il-A, RL = 1000) - 3 - microseconds
;:~, ,
@ VDE Approved to 0883/6.80 dj10b Certificate. # 35025

. \ / ' .
370
IMCT2, MCT2E, MCT261
ID
v
1,'2QonA
- t--
It.
!
0
V
.NORMALIZED TO
vcE"tOv
IF-lOmA
~
Ij.'!OmA
- t--
r--
i
1,'-
V
, 0.I
V ~ r--
j NCRMAUZEO TO'
'U'IOV
I,'!OmA
TA-25·C
.01 ,
0. ~ 65
-IS TA-~
I
25 65
TEMPERATURE-"C
tOO
I 10 tOO
IF· INPUT CURRENT - mA
to
1000
,, " I,'SOmA
/
- 1"lJ
l;-
tOO
V ~II
.. 10
/ IT
7 7
[7 ~
l~AL
/
E
1fT
1 1/ NORMALIZED TO
VCE -lOy
I
IITti
I
J
I
.01 tOO
10
VCE - COLLECTOR TO EMITTER VOlTAGE· VOlTS
.01 OUTPUT CHARACTERISTICS
.5
/ 1.0 1.5 2.0
tOO
v
t---.
f'..
i'- l'-
- .........
l-
I'l"-
t-- t-RVIKa
/
V
l"- r---.....
....... V Vcs'IOY
.......
r- NORMALIZED TO
t-- VeE' IOVOLTS
ICEo-2mA
ton ,. toft· 3;"HC
........... ~
RL -1008
I
V
----
RLIIOA
t-- RL'!OOa
J
I I I I
LO to tOO to 100
lCEO"': OUTPUT CURRENT - IftA I,-INPUT CURRENT-mA
371
SOLID STATE
<® D .© ELECTRONICS
Photon Coupled Isolator MCT210 MILLIMETERS INCHES
svMeot. NOTES
GaAs Infrared Emitting Diode &NPN Silicon Photo-Transistor MIN. MAX.
JLrK
SEATING MIN. ",AX.
The General Electric MCT210 is a gallium arsenide, infrared emit- A 8.38.1 8.89
7,62 REF.
.330 .I.
',350
ting diode coupled with a silicon photo-transistor in a dual in-line -,=

+---"-="~
B
C - 8,64 I .300 REF.
- ,34(( 2
I
package. 1 D
E
.406
1.01
- ,i: .016
-
.020
,200 3
B F 1.78 ,040 ,070
"'Covered under U.L. component recognition program, M G 2.28 2.80
1
.090 .110
reference file E51868 H - 2.16 - ,085 4
J :203 .305 ,OOS .012
absolute maximum ratings: (25°C) K 2,54 - ,100 -

M - 15" - 15"
N .381 - .015 -
INFRARED EMITTING DIODE P - 9,53 - .375
R '2.92 3.43 ,115 .135
Power Dissipation *200 milliwatts S 6.10 6.86 .240 .270
1. INSTALLED POSITION LEAD CENTERS,
Forward Current (Peak) 3 ampere 2, OVERALL INSTALLED DIMENSION.
(Pulse width 1 J,lsec 300 P Ps) 3. THESE MEASUREMENTS ARE MADE FROM THE
Reverse Voltage 3 volts SEATING PLANE,
4, FOUR PLACES,
*Derate 2.6ntW/oC above 25°C ambient.
TOTAL DEVICE
Power Dissipation **200 milliwatts Operating Temperature -55 to lOO°C
VCEO ' 30 volts Lead Soldering Time (at 260°C) 10 seconds
VCBo 70 volts Surge Isolation Voltage (Input to Outptit)~
VEco 7 volts 2500V (peak) 1500V(RMS)
Collector Current (Continuous) 100 milliamps Steady..,State Isolation Voltage (Input to Output).
**Derate 2.6mW/oC above 25°C ambient. 2250V(peak) 1250V(RMs)

Forward Voltage 1.1 1.5 volts Breakdown Voltage-V(BR)CEO 30 - - volts
(IF = 40mA) (Ic = lOrnA, IF =0)
Breakdown Voltage-V WR)CBO 70 - - volts
(Ic = lOOIlA, IF = 0 '
Reverse Current - 10 rnicroamps Breakdown Voltage-VWR)ECO 6 - - volts
(V r = 6V) (IE = IOOIlA, IF = 0
Collector Dark Current-IcEo - 5 50 nanoamps
(VCE = lOY, IF = 0)
(V = O,f= 1 MHz) (VCE = lOV,f= 1MHz)

DC Current lhmsferRatio (IF = 3.2mA to 32mA, V CE = O.4V) 50 - - %

(IF = lOrnA, VCE = 5V) 150 - - %
Saturation Voltage - Collector to Emitter (IF = 32mA, Ic = 16mA) - 0.1 0.4 volts
Isolation Resistance (Input to Output Voltage = SOOV DC> 100 - - gigaohms
Input to Output Capacitance (Input to Output Voltage = 0, f = IMHz) - - 2 picofarads
Switching Speeds: Rise/Fall Time (V CE = lOY, ICE = 2mA, RL = 1000) - 5 - microseconds
Rise/Fall Time (V CB = lOY, ICB = 50p,A, RL = 1000) - 300 - nanoseconds
372
IMCT210 I
-
.020l0I
r-
V
0
V
NORMALIZEO TO
.VeE-IOV
I,-'OmA
~
.01OloA
- r-- --.
V I,·,...
I
V
-.am lQ.
r---- r--
'l:£0IOY
F I,·1OfftA
T... _nee
.0I - -
I 100
I 10 100
J F ~ INPUT CURRENT - mA
10
1000
, .- " IF'~
,-
100
V
l..-
l.oL'-
1--1 1
. 10
/' I
I
I ... t~L
/
e
..; I
I
a 1.0
1 -.zED TO,
o VCE-tOy
a:
;
~ 0' l'll'i'j 1
I
.01
I 10
.001 0
.5
/ 1.0
VF -FORWARO VOLTAGE - VOLTS
'.0
100
v
,I'...
"-
-
I'-...
~"
........
t-
1"-",
t-- I-"Lol ...
1
7
V
" r---... V
0
r- NORMALIZED TO ...... " V lice o lOY

.......
t-- VCE olOVOLTS
'CEo-2mA
tan JI loff JI 3,.-nc
I'-...
r--.
R'L-IOCA
I
AL-'OA
V
I-- "lolOOA
, I I I
1.0 10 100
I
IeEO· OUTPUT CURRENT - mA
373
OPTOELECTRONICS CROSS REFERENCE
The suggested replacements represent what we believe will meet the terms of its applicable published written
to be equivalents for the products listed. GE assumes no product warranties. The pertinent GE product
responsibility and does not guarantee that the specification sheets should be used as the key tool for
replacements are exact, but only the replacements actual replacements.
NEAREST NEAREST
COMPETITIVE GENERAL ELECTRIC COMPETITIVE GENERAL ELECTRIC
TYPE NUMBER PART NUMBER TYPE NUMBER PART NUMBER
IN6264 IN6264 CLl:·230 H22Bl

IN6265 IN6265 CLI-506 HllA3
IN6266 IN6266 CLI-506A HllA3
4N25 4N25 CLI-506B HIIA3
4N25A 4N25A CLI-510 4N37
4N26 4N26 CLI-511 4N37
4N27 4N27 CLI-SOO H21Al
4N28 4N28 CLI-810 H2lAl
4N29 4N29 CLI-Sll H2lA4
4N29A 4N29A CLI-820 H2lA2
4N30 4N30 CLI-82 I H2lA5
4N31 4N31 CLI-830 H2lA3
4N32 4N32 CLI-S31 H2lA6
4N32A 4N32A CLI-S35 H2lAI
4N33 4N33 CLI-S36 H2lA4
4N35 4N35 CLI-840 H2lBI
4N36 4N36 CLI-84 I H2lB4
4N37 4N37· CLI-S50 H2lB2
4N38 4N38 CLI-S5l H2lB5
4N3SA 4N3SA CLI-S60 H2lB3
4N39 4N39 CLI-861 H2lB6
4N40 4N40 CLI-870 H2lBI
BPWl3A Ll4C2 CLI-S71 H2lB4
BPWl3B Ll4C2 CLT2010 . Ll4C2
BPWl3C Ll4C2 . CLT2020 Ll4CI
BPW36 BPW36 CLT2130· Ll4G2
BPW37 BPW37 CLT2140 Ll4G2
BPW38 BPW38 , . CLT2l50 Ll4Gl
BPX-3S-1 Ll4CI CLT2160 Ll4G3 .
CL-IOO LED56 CNYl7I CNYl71
CLI-2 HllA5 CNYl7U CNYl7II
CLI-3 4N37 CNYl7II1 CNY17II1
CLI-5 HllA3 CNYl7IV CNYl7IV
CLI-6 HIIAI CNY28 CNY2S
CLI-7 HllA3 CNY29 CNY29
CLI-lO HllBI CNY32 CNY32
CLI-ll HllBI CNY33 CNY33
CLI-12 HllB2 CNY34 CNY34
CLI-13 HllG3 CNY35 CNY35
CLI-14 HllG3 CNY36 CNY36
CLI-210 H22Al CNY47A CNY47A
CLI-220 H22Bl CNY48 CNY48
374
NEAREST NEAREST
CNY51 CNY51 GE3009 GE3009

CN¥75A GFH60111 GE3010 GE3010
CNY75B GFH601II1 GE3011 GE3011
CNY75C GFH601IV GE3012 GE3012
CQXl4 CQXl4 GE3020 GE3020
CQXl7 GE3023 GE3023
CQXl7
CQY80 GFH6001 GFH600I
CQY80 GFH600II
F5DI GFH600II
F5DI GFH600II1 GFH600III
F5D2 F5D2 GFH601I GFH601I
F5D3 F5D3 GFH60lII GFH60lII
F5EI F5EI GFH60 I III GFH60lIII
F5E2 F5E2 GFH60lIV GFH6011V
F5E3 F5E3 HIIAl HIIAI
F5FI F5FI HIIA2 HIIA2
F5GI F5GI HIIA3 HllA3
FCD810 HIIA3 HllA4 HllA4
FCD8lOA HllA5 HllA5 HllA5
FCD810B HllA3 HIIAlO HIIAlO
FCD810C HllA520 HllA520 HllA520
FCD810D HllA520 HllA550 HllA550
FCD820 HllA3 HllA5100 HllA5100
FCD820A HIIA2 HIIAAI HIIAAI
FCD820B HllA3 HIIAA2 HllAA2
FCD820C HllA520 HlIAA3 HllAA3
FCD820D HIIA520 HllAA4 HllAA4
FCD825 HIIAI HllAGI HIIAGI
FCD825A HllAI HIIAG2 HllAG2
FCD825B HIIAI HllAG3 HllAG3
FCD825C HllA550 HllAVI HllAVI
FCD825D HllA550 HIIAVlA HllAVIA
FCD830 HIIAI HllAV2 HIIAV2
FCD830A HllA2 HI 1AV2A HllAV2A
FCD830B HllA3 HlIAV3 HllAV3
FCD830C HllA520 HI 1AV3A HIIAV3A
FCD830D HllA520 HIIBI HllBI
FCD831 HllA3 HllB2 HllB2
FCD83lA HllA3 HIIB3 HllB3
FCD83lB HIIA3 HllB255 HIIB255
FCD83lC HllA520 HllCI HllCI
FCD83lD HllA520 HIIC2 HllC2
FCD836 HllA3 HIIC3 HIIC3
FCD836C HllA520 HllC4 HllC4
FCD850 4N29 HllC5 HIIC5
FCD860 HllBI HIIC6 HIIC6
FCD865 HllBI HllDI HIIDI
FPE500 LED56 HllD2 HllD2
FPE510 LED56F HllD3 HIID3
FPE520 LED56 HIID4 HIID4
FPE530 LED56F HIIFI HIIFI
375
NEAREST NEAREST
HllF2 HllF2 H22B3 H72B3

H11F3 H11F3 H22B4 H22B4
H11Gl H11Gl H22B5 H22B5
HllG2 H11G2 H22B6 H22B6
H11G3 H11G3 H22Ll H22Ll
H11G45 H11G45 H22L2 H22L2
HllG46 H11G46 H23Al H23Al
H11J1 Hl11l H23A2 H23A2
HI 112 HI 112 H23Bl H23Bl
Hl113 HI 113 H23Ll H23Ll
HI114 HI 114 H24Al - H24Al
HI 115 Hl115 H24A2 H24A2
HllLl HllLl H24Bl H24Bl
HllL2 HllL2 H24B2 H24B2
HIIL3 HllL3' H74Al H74Al
H13Al H2lAl H74Cl H74Cl
H13A2 H2lAl H74C2 H74C2
H13Bl H2lBl ILl HllA3
H13B2 H2lBl IL5 H11Al
H15Al H24A2 • • IL12 HllA5.
H15A2 H24A2 IL15 HllA5
H15Bl H24B2 IL16 H11A5
H15B2 H24B2 IL74 H11A5
H17Al H23Al , IL201 CNY17II
H17Bl H23Bl IL202 CNY17III
H20Al H22Al IL203 CNY17IV
H20A2 H22Al IL250 HllAA3
H20Bl H22Bl ILA30 H11B3
H20B2 H22Bl ILA55 H11B255
H21Al H2lAl ILCA2-30 H11B3
H21A2 .H2lA2 ILCA2-55 HllB255
H2lA3 H2lA3 L14Cl L14Cl
H2lA4 H2lA4 L14C2 L14C2
H2lA5 H2lA5 L14Fl L14Fl
H2lA6 H2lA6 L14F2 L14F2
, H2lBl H2lBl L14Gl L14Gl
H2lB2 H21B2 L14G2 L14G2
H2lB3 H2lB3 L14G3 L14G3
H21B4 H2lB4 L14Nl L14Nl
H21B5 H21B5 L14N2 L14N2
H2lB6 H2lB6 L14Pl L14Pl
H2lLl H21Ll L14P2 L14P2
H21L2 H2lL2 L14Ql L14Ql
H22Al H22Al L14Rl L14Rl
H22A2 H22A2 LED55B LED55B
H22A3 H22A3 LED55BF LED55BF
H22A4 H22A4 LED55C LED55C
H22A5 H22A5 LED55CF LED55CF
H22A6 H22A6 LED56 LED56
H22Bl H22Bl LED56F LED56F
H22B2 H22B2 MCAllGl HIIGI
376
NEAREST NEAREST
MCAIIG2 HIIG2 MOC3021 GE3021

MCA8 H21Bl MOC3022 GE3022
MCA81 H2lB2 MOC3023 GE3023
MCA230 MCA230 MOC5003· HllL2
MCA231 MCA231 MOC5004 HIIL2
MCA255 MCA255 MOC5005 HllL2
MCP3009 GE3009 MOC5006 HIIL2
MCP3010 GE3010 MOC5007 HllLI
MCP3011 GE3011 MOC5008 HllL3
MCP3020 GE3020 MOC5009 HllL2
MCP3021 GE3021 MOC7811 H21Al
MCP3022 GE3022 MOC7812 H21A2
MCS2 MCS2 MOC7813 H21A3
MOC7821 H22Al
MCS21 MCS21. MOC7822 H22A2
MCS2400 MCS2400 MOC7823 H22A3
MCS2401 MCS2401 MOC8020 HIIG2
MCT2 MCT2 MOC8021 HIIG2
MCT2E MCT2E MOC8030 HllG2
MCT8 H21AI MOC8050 HIIG2
MCT26 . MCT26 MOC8100 HllAG3
MCT81 H2lA2 MRD300 Ll4Gl
MCT210 MCT210 MRD310 L14G2
MCT271 CNYI71 MRD3050 Ll4G2
MCT272 CNYl7II MRD3051 L14G2
MCT273 CNYl7II1 MRD3052 Ll4G2
MCT274 CNY17lV MRD3053 L14G2
MCT275 CNYl7III MRD3054 L14G2
MCT277 HllAl MRD3055 L14G2
MFOD202F GFODIAI MRD3056 L14Gl
MFOD302F GFODIBI MRD360 L14FI
MFOE102F GFOE1Al MRD370 L14F2
MLED7l F5Fl MRD701 L14Ql
MLED930 LED56 MRD7l1 L14Rl
MOClOOO 4N26 MTI L14Cl
MOCIOOI 4N25 MT2 L14Gl
MOClOO2 4N27 OPl30 LED56
MOClOO3 4N28 OP130W LED56F
MOCIOO5 HIIA520 OP131 LED55B
MOClOO6 HIIA520 OPl3IW LED55BF
MOCl19 HllB2 OP132 LED55C
MOC1200 4N30 OP132W LED55CF
MOC3000 HllC6 OP133 LED55C
MOC3001 HllC5 OPl33W LED55CF
MOC3002 H1IC3 OP135 LED55B
MOC3003 HllC2 OPl36 LED55B
MOC3007 HllC3 OP136W LED55BF
MQC3009 GE3009 OP137 LED55C
MOC3010 GE3010 OP137W LED55CF
MOC3011· GE3011 OP140 F5Fl
MOC3012 GE3012 OP140SL F5Fl
MOC3020 GE3020 OP140SLD F5Fl
377
NEAREST NEAREST
COMPETITIVE . GENERAL ELECTRIC COMPETITIVE GENERAL ELECTRIC
. OP230 F5D2 OPB8J5 H2lA2

OP230W F5E2 OPB816 H2lAI
OP23l F5D2 OPB817 H2lA2
OP23lW F5E2 O:PI2l00 MCT2l0
OP232 F5D3 OPI2l50 HllA4
OP232W F5E3 OPI2151 HllA4
OP233 F5Dl HIIA2
OP233W FSEl OPI2152
OP240 P5Gl OPI2153 HIIAI
O:PZ40 SLA P5Gl OPI2lS4 'HllAG3
OP240SLB FSGI OPI2155 lIllAG3
OP240SLC F5Gl OPI2250 HIIA3
OPSSO Ll4QI OPI225I HIIA3
,OPSSOSLA L14QI OPI2252 HllA3
OPSSOSLB L14QI OPI2253 HIIAl
OPSSOSLC Ll4QI OPI2254 HllAG3
OPSSOSLD L14Ql OPI22 55 HllAG3
OPS60 L14Rl OPI2S00 HllAA2
OP800 l.-l4G2 0:PI3009 GE3009 .
OP800W Ll4C2 OPI3010 GE3010
OP801 Ll4G2 OPI3011 GE30l1
OP801W Ll4CI OPI3012 GE3012
Op802 L14CI OPI3020 GE3020
OP802W L14Gl OPi302l GE3021
OP803 Ll4G3 OPI3022 GE3022
OP8Q4 . L14PI 01>13023 GE3023
OP80S L14Pl OPI3l50 HllB2
OP811 Ll4G2 OPI315l HIIB2
OP811W L14Cl OPI3l52 HllB3
OP812 Ll4GI OPI3l53 HllBl
OP813 L14G3 OPI3250 HllBl
OP814 Ll4G3 OPl325l HllBl
OP830 L14Fl OPI3252 HUBl
OP84 I Ll4G2 OPI3253 HllBI
OP84f Ll4C2 OPI4201 HIICI
OP842 L14Gl OPI4202 HllC3
OP842W L14Nl . OPI440l HllC4
OP843 L14G3 OPI4402 HllC6
OP843W Ll4Nl OPI5000 HlIA520
OP844 Ll4Pl OPI5010 HllA520
OP844W L14Nl OPI6000 HIIDl
OP84S L14Pl OPI6100 HllD3
OP84SW Ll4Nl OPI7003 H24A2
OPB120 H21Al OPI7010 H24AI
OPB242 H21AI OPI7320 H24B2
OPB243 H21Bl OPI7340 H24B2
OPB800 H21AI OPS69 0 H23A2
OPB800S H2lAI OPS69l H23A2
OPB8003 H2lBI OPS692 H23AI
QPB804 H22Al OPS693 H23Al
OPB806 H2lAI SCSJICI HIICI
OPB813 H2lAl SCSllC3 HllC3
OPB814 . H2lA2 SCSllC4 HllC4
. ,
378
NEAREST NEAREST
SCSIlC6 HIlC6 SPX26 HIlA520

SD3443-1 L14Cl SPX28 HI1A520
S05410-1 L14Fl SPX33 HIlA520
SD541O-2 L14Fl SPX35 HIIA5100
SD541O-3 L14Fl SPX36 HIlA5100
SD5440-1 , L14G2 SPX37 HI1A5100
SD5440-2 L14G2 SPX53 HllA550
SD5440-3 Ll4G2 SPX103 4N35
SD5440-4 Ll4GI SPXI872-l H22AI
SD5440-5 L14Gl SPX1872-2 lJ22Al
SD5443-l L14G2 SPX1872-3 H22Bl
SD5443-2 L14G3 SPXI872-4 H21Bl
SD5443-3 L14G3 SPX1873-l H21Al
SE3450-l LED56F SPX1873-2 H21Al
SE3450-2 LED56F SPX1873-3 H21BI
SE3450-3 LED56F SPX1873-4 H21Bl
SE3451-1 LED56F SPX1876-l H21Al
SE3451-2 LED55BF SPX1876-2 H21Al
SE3451-3 LED55CF SPX1876-3 H21Bl
SE3453-l LED56F SPX2762-4 H22A2
SE3453-2 LED56F SPX7271 CNYl71
SE3453-3 LED55BF SPX7272 CNY17II
SE3453-4 LED55CF SPX7273 CNY17II1
SE3455-1 LED55BF SPX7910 HllLI
SE3455-2 LED55CF SPX7911 HllL3
SE5450-l LED56 TIL3lA LED55B
SE5450-2 LED56 TIL31B LED55B
SE545l-l LED56 TIL33A LED55BF
SE545 1-2 TIL33B LED55BF
LED55B TIL34A LED56
SE5451-3 LED55B TIL34B LED56
SE5453-l LED56· TIL40 F5Fl
SE5453-2 LED55B TIL81 L14Gl
SE5453-3 LED55B TIL99 L14C2
SE5453-4 LED55B TILlil HllA4
SE5455-l LED55B TIL Il 2 HllA5
SE5455-2 LED55C TILl 13 HIlB2
SE5455-3 LED55C TILl14 HIlA3
SE5455-4 LED55C TILIl5 HIlA3
SFH600-l GFH6001 TILl 16 HllA3
SFH600-2 GFH6001I TIL Il 7 HIIAI
SFH600-3 GFH600II1
SFH601-1 GFH6011 TILIl8 HIIA5
SFH601-2 GFH60lII TILIl9 HIIB2
SFH601-3 GFH60lIII TILl24 HIlA520
SFH601-4 GFH60lIV TILl25 HllA520
SGI009 LED55B TIL126 HllA520
SGI009A LED55C TILl38 H2lAI
SPX2 HIIA550 . TILl43 H2lAl
SPX2E HllA550 TIL 144 H21Al
SPX4 HI1A550 TILl45 H2lBl
SPX5 HllA550 TIL 146 H21Bl
SPX6 ' H1IA5100 TIL 147 H22A3
379
NEAREST NEAREST
.TYPE "IUMBt:R PARTNUMBER TYPE NUMBER PART NUMBER
TILl48 H22Al TIL904-1 F5E2

TILl53 HllA520 TIL904-2 F5E2
TIi.l54 HllA520 XC88FA F5E2
TILl55 HIIA550 XC88FB F5E2
TILi56 Hll02 XC88FC F5E3
TILl57 Hll02 XC88FD F5EI
TIL411 Ll4QI XC88PA F5D2
TIL412 Ll4RI XC88PB F5D2
TIL903-1 F5D2 XC88PC F5D3
TIL903-2 F5D2 XC88PD F5DI
380
A DC Linear Coupler 72
Absorption Coefficient, Light in Silicon 15 DC Motor 113, 148
Accelerated Testing 77, 78 DC Relay 146, 147
Acceleration Factors 77,86,88,90,157 Defect Level 75
AC Motor 111,114 Degradation 83-87,91-94
AC Relays 131,139 Degradation Slope 84,86
AC Switch 55,59,61 Design Life 87,89
AGC 120 Detectors 22,36,59,61,63,69,73,74
Alignment 71, 121 Detectors, Light 15-22, 61-64
Ambient Light 35,37,98,106,109,112 Dial Tap 124
Amplifier 51,59,63,74,115,118,120 Dielectric 25-27,44-47
Analog 58, 116, 129 Dielectric Breakdown 46
Analog Information 116-121 Dielectric Stress 47
Anode Supply Triggering 141 Diesel 151
Answering Equipment 118 Diffraction 37
Antiparallel 47, 135, 139, 153 Digital Information 121
Antireflective Coating 76 Digital Line Receiver 128
Aperture 36,37,97 Diode Laser 14
AQL 81 DIP 25,26,43,44,80,81
Area, Light Sensitive 30.37 Display Illumination 110
Attenuation 33, 69-73, 120 Drop Detector 112
Avalanche Photodiode 16, 74 Dual In-Line Package 25,26,43,44
dv/dt 57,61,62,102,138,150
B Dynamic Response 52,57, 136, 138
Backlighting 37
Bandgap Energy 13-16 E
Base Resistor 20,54,55 Effective Irradiance 29,31
Battery Operation 107, 108, 115, 148, 151 Effectiveness 29,33
Battery Saver 148 Efficiency of IRED 32, 54
Bias 13-21,49,52,53,55,57-61,64,66, 75,88-95, Electromechanical Relay 131
98, 102 Electrostatic Shielding 43, 100
Bilateral Analog FET 51,58,102 Emergency Light 108
Breakdown Protection 46,61-63 EMIIREllmmunity 67,131,136,153
Brightness- Control 109,110 Emitters
Buffer 66,122-124,129,132 22,29,72,77,82
Epoxy Pellet Mount 92,93
Burn In 94 Expanded Base 22
C Eye Hazard 104
Cabling 68 F
Capacitance15, 17,26,43,49,52,56-61,64,98,100 FailSafe 103,115
Failure Age 80
Capacitor Discharge 49, 56, 58 Failure Mode 46, 90-94
Cascode Bias 38, 112 Failure Rate 75-81, 88-93
Channeling 47, 79 Fiber Bundles 72
Chatter 133, 139 Fiber End Polish 72
Checklist, Source/Detector 33 Fiber Optics 23,33,67-74,116,119,136,149
Click Suppression 124 Fiber Optic Connectors 71
CMOS 66,123, 132 Fiber Optic Sensing 41, 42
Coefficient of Expansion 76,81 Filters 99
Coil 131, 148, 151 Fixture 97
Communication Lines 43, 128 Flame Monitor 109
Communications 116, 124 Flasher 108
Commutation 58,61. 62. 129 Fluorescent Lamp 31
Competitive 44, 46, 52, 81, 87, 90-95 Forward Voltage 47
Compression Amplifier 59, 120 f/# 33
Construction 22-26.44,62 Frequency of LED Emission 13, 14
Contacts 102, 133, 134 F5E 71,73
Conversion Efficiency 30 G
Cost 16,23,37,38,61,71,72,75,90,93
GaAIAs 14,29,32,47,50, 71
Coupled dv/dt 56 GaAs, GaAs (Si) 13, 16,29,31,50, 72, 83, 86, 104
Coupled Thermal Resistance 79 Gain - Photodarlington 19, 32, 33
Coupling Efficiency 43 Gain - Phototransistor 18, 32, 33
Critical Angle . 69 Gallium Arsenide 13, 104
CTR 25,51,53,79,81,82,101
Gate Bias 57
Current Gain 33 GE-MOV@ II 46, 62
Current Transfer Ratio 25 GFOD, E 23,56, 72, 74,78
Curve Tracer 101 Glass Dielectric 25, 28, 43, 44, 79
o Glow Plug 151
Dark Current 18 Graded Index Core 68
Darlington 20, 79, 162 Grey Code 38
381
H Lens 22,23,72,78,108
HllAl0 42,127, 128 Lenses 31.35-37
HllAA 47,125,127,133 Light 13,15,29,31,105-110
Hl1AG 48,53 Light Detector 15-21,30,105-110
HllAV 28,43,100 Light Output 13,14,31,34
HllBX522 125 Linear Coupler 120,121
HllC 56,101, 134-146 Linearity 58,59,120,121
Hl1G 55 Line Current Detector 125-127
Hl1L 48,63,102,122,126,128,151 Line Status 126
H74A 122,123 Liquid Epitaxial 13,49, 72, 82,117
H74C 56. 122 Load Resistor
Half Duplex Link 73,119 52,55,59,60,94,98,152
Logic Circuits 66,122,124,131,138,140
Headlight Dimmer 105 Low Light Level 17,105,11.2
Heater 153 LSI 122, 123
Hermetic Package 24 LTPD 75
hFE 16-18,52,93 M
High Frequency 116 43
Machine Tool
High Voltage Switching 141-144,147 Masking 36
High Voltage Trigger Values 143 Measurement 45,46,97-102
HTRB 47,79,91.93.95 Mechanical 77,83,91-93
Humidity Life 76-78.81.88.89.91.92 Miller Effect 51,60
Hunting 113
Hysteresis Model 83-90, 151
63.133. Modulation 72,117,120,150
Moire Fringe 39
Monochromator 98
' CEO 18,37,53,54.98 Motor Controls
'FM 82-87 111, 113~115, 137, 148, 149
IFS 82-87 MSI 122, 1.23
'FT 56, 101 Multiplex Switch 129
'H 56 N
IC Logic Bias 66 134, 137, 139, 147
Indicator Lamp 128 N.C. Contacts
Neon Lamp 13.31, 108
Input Capacitance 49 106-108
Night Light
Input Characteristics 47-49 NMOS 66-124
Input Current 53, 54, 58 N.O. Contacts 133-136, 138. 139, 147
Integral Cycle Contact 136, 137 Noise 34,37,120,128,136
Integrated Circuits 61,63,66, 74, 120, 122 Normalized Response 52-55, 57, 59
Interconnect 124 NRZ Data Rate 65, 122
:~~~:~~~e[ayer 24, 42, 70. 78. 111 Numerical Aperture 69
77
Inverter 149. 152 o
IRED 13,14,31-35,38.42,44.47-49,51,53-55 Object Detector 112-115
Offset Voltage 56,58,60,129
I d· 58,61,66,72,76-78,82-88,92-97,120,123
rra I~nce 25, 26, 32, 24, 69, 97 Operating Life 76-80,88,91-95
Isolation 26 43-47 119 120 Operational Amplifier 60,120
Isolation Capacitance " 28. 43 Optical Cavity 16
Isolation Resistance 43 30, 73, 97-99, 119
Isolation Voltage 25-29,43-47 Optical Measurements
Optocoupler 25-27,43-66
- Specification 45 Optoisolator 25027, 43-66
- Steady-State 45 15,21,87,49-66
- Surge 45 Output Characteristics
- Very High 22 Output Current 30,53.54,59,73
Isolator 25-27, 128 p
J Packaging 22-26,43,44,76,77,92
Junction 13-19 Paper Discriminator 112
Junction Temperature Paper Tape Reader 112. 113
56, 58, 75, 88-90 Peak Spectral Response 15,29
K Phase Control 109, 110, 114
Key System 124 Phone 124
Photocell 15,97,98
L Photocurrent 17
L14C 30. 105 Photodarlington 19,53-56, 77.80
L14G 55, 108-111, 115, 120 Photodiode 15.16.29,30.34
Lamps 29-31,34.98. 106 Photographic Flash 105
LASCR 23.29 PhotoSCR 20,21,56-58,152
Laser 13, 14,20, 72, 117 Photosensitivity 17,34
Latching Relay 139, 146, 147 Phototransistor 16-18,51-53.77
Lead Bond Wire 17, 22, 46, .77, 92-94 PIN Diode 74
Leaka-ge Current 19,34,55,59, 76,93 PMOS 66,124
LED 13. 14, 72 PNPAction 51,152
LED Wavelength 13,14 Po 32, 83-85, 117
382
Point Source 36,98 -IRED 49,117
Positioning 38-42,97,98 - Photodarlington 56
Power Dissipation 32,55,79,88,92,117 - Phototransistor 17,53
PRM 117,121,153 - Schmitt Trigger 65
Programmable Unijunction 58,106,110,114-117 Symmetrical Transistor 21,51
120, 149 Synchronous Rectification 38,68
Proportional Control 149-153
Pulsating DC 34, 146 T
Pulse Width Modulation 149 t 83, 86, 91, 101
Pulsed Mode 30,32,34,87,149 Tachometer 111,114
Pulsed Operation 68,86,87,116,149 Telecommunications 124
Temperature Acceleration 38,84-86
Q Temperature Coefficient 37,52,54,57,63
Quality 75 Temperature Controller 153
Temperature Cycle 76-79,81,86,88,89,91,94
R Thermal Fatigue 76
Radiant Intensity 97 Thermal Resistance 58, 79
Reflections 25,37, 111 Thermopile 98
Reflector 23-26, 35, 42 Three-phase Circuits 130, 144
Relay 131-148 Threshold Operation 48, 66, 125-128, 130
Reliability 46,60-62, 75-95, 103, 131 Time Delay 48,107,124-126
Reliability Enhancement 90 Toxic Hazard 104
Reliability Prediction 76,88,89 Transceiver 34, 119
Resolution 24,36,39 Transfer Characteristics 47-66. 101
Response Time 15,38,49,52,64 Transimpedance 120
Rework Rate 77 Translucence 112
RFI 64,67,111,131,136,153 Transmission 70-116
RGK 56,57 Transmissivity 33,68
Ring Detector 124,125 Transmitter 116-120
Ring Extender 125 Triac 61,107,110,114,126,135-139
Rise Time 49,65,101,129 Triac Driver 21,61,102,138,140
Triac Selector 107, 137
Rotary Encoder 38 Triggering 56,6~ 101, 133, 13a 141
s TTL 66,122-124,131
Safety 103 Tungsten Lamp 13.29-31,106,137
Salt Atmosphere 78 Turn-off Time 57.60,65,101
Saturation Characteristics 56,60 Turn-on Time 60,65,101
Scanning 41 Two Transistor Model
22
Schmitt Trigger 48,63,111,131 U
SCR 20,51,56,80,91,133-135 UCL 77-81
138,141-145,149,152 UL 103
Self Heating 59,81,104 Unijunction Transistor 38,'51, 58
Sensitivity 15-21,33,34,37,56
Signal to Noise Ratio 37,116 V
Silicon 15,30,74 18, 55, 106
V&E
Slope 84-86 V E 26, 108
Snubber 43,57,61,135,138 Virtual Initial 84
Solid State Relay 131-147 Voltage Capability 44
Sources, Light 13,29,31 VoLtage Gain 17,51, 120
Spacial Distribution of Sources 29-37 Voltage Waveform 64, 101
Specification Selector 8-12 VOX 120
Spectral Effects 29,31,34,70,98
Speed 17,34,38,60,63,72,117 W
Steady-state Voltage 29-31 Waveform 44,64,101
Step Index Core 68 Welding 149
Storage Life 76-81,90,92,93,95 X
Stored Charge 65,117 31,38,105
Stress Xenon Flash
76, 79, 83, 88-90
Sun 108 Z
Surge Currents 107,135,137 Zener Diode 143-144
Surge Voltage 45-47 Zero Voltage Switching 57,58,130-137,153
Switching Speed 52, 101
- Bilateral Analog FET 60
383
NOTES
384
NOTES
385
DOMESTIC
ALABAMA IOWA NORTH CAROLINA

CS R Electronics, Huntsville J. R. Sales, Cedar Rapids CSR Electronics, Raleigh
(205) 533-2444 (319) 393-2232 (919) 878-9200
ARIZONA KANSAS OHIO

Shefler-Kahn, Phoenix KEBCO, Kansas City Giesting & Assoc., Cincinnati
(602) 257-9015 (913) 541-8431 (513) 521-8800
Giesting & Assoc., Dayton
CALI FORN IA MARYLAND (513) 293-4044
Addem, San Diego Robert Electronic Sales Giesting & Assoc., Mentor
(619) 729'9216 (301) 995-1900 (216) 942-3407
Interstate Marketing, Woodland Hills
(213) 883-7606 MASSACHUSETTS OKLAHOMA
Elrepco, Los Altos Advanced Technology Sales, Burlington Bonser-Philhower Sales, Tulsa
(415) 962-0660 (617) 272-0100 (918) 496-3236
COLORADO MICHIGAN OREGON
Thorson Rocky Mountain, Englewood Giesting & Assoc., Novi
LD Electronics, Beaverton
(303) 779-0666 (313) 348-3811 (503) 649-8556
CONNECTICUT Giesting & Assoc., Coloma
(616) 468-4200 PENNSYLVANIA
Advanced Component Sales, Meriden
(203) 238-6891 Gjesting & Assoc., Pittsburgh
MINNESOTA (412) 963-0727
DISTRICT OF COLUMBIA PSI, Minneapolis
TEXAS
Robert Electronic Sales (612) 944-8.545
(301) 982-1177 Bonser-Philhower Sales, Richardson
MISSOURI (214) 234-8438
FLORIDA KEBCO, St. Louis Bonser-Philhower Sales, Austin
(314) 576-4111 (512) 458-3569
E I R, Fern Park
(305 830-9600 Bonser-Philhower Sales, Houston
EIR, N. Lauderdale
NEW JERSEY (713) 495-3115
(305)975-8712 COMTEK, Mt. Laurel
(609) 235-8505 UTAH
GEORGIA Thorson Rocky Mountain, West Valley City
CSR Electronics, Atlanta NEW MEXICO (801) 973-7969
(404) 396-3720 Shefler- Kahn, Albuquerque
(505) 296-0749 WASHINGTON
ILLINOIS
LD Electronics, Snohomish
D. Dolin Sales, Chicago NEW YORK (206) 568-0511
(312) 286-6200 Ossmann Component Sales, Rochester LD Electronics, Spokane
(716) 424-4460 (509) 922-4883
INDIANA
Ossmann Component Sales, Syracuse
Giesting & Assoc., Fort Wayne (315) 455-6611 WISCONSIN
(219) 468-1912
S-J Assoc., Jamaica D. Dolin Sales, Milwaukee
Giesting & Assoc., Indianapolis
(212) 291-3232 (414) 482-1111
(313) 263-0005
386
."(!IlIJl!L@Er{fi~rI:~HrJf9lr;f1ffWIDE
INTERNATIONAL
ARGENTINA GREECE MEXICO
General Electric Argentina S.A. General Electric Trading Co. Proveedora Electronica S.A.
Santo Domingo 3220 PO. Box 11549 Apdo. Postal 21-139
Buenos Aires, Argentina Jumeirah Mexico 21, D.F.
Tel:(541)281472 Dubai, U.A.E. Tel: 5-54-8300
AUSTRALIA Tel: 237816
Australian General Electric HONG KONG Ray tel S.A.
Cnr. Lane Cove & Epping Rds. General Electric Technical Sullivan No. 47 Y 49
North Ryde, PO. Box 174 Services Company, Inc., U.SA Mexico 4, D.F.
Willoughby NSW 2068, Australia 3410 Connaught Centre Tel: 5-46-0663
Tel: 02 888 8111 Hong Kong
BELGIUM Tel: 5-210-371 PHILIPPINES
General Electric Company General Electric
INDIA
(USA) Philippines, Inc.
IGE (India) Ltd.
Chaussee de la Hulpe 150 2291 Pasong Tamo Ext.
Nirmal, 17th Floor
B-1170 Brussels Makati Metro Manila
Nariman Point, Bombay' 400 021
Tel: 660-20-10 Philippines
Tel: 233075 Tel: 89-10-01
BRAZIL IGE (India) Ltd.
Applicacoes Electronicas .A. Archana Office Complex
SINGAPORE
Artimar Ltd. General Electric (USA)
Greater Kailashi 1
Caixa Postal 5881 Asia Co.
New Delhi 11048
Sao Paulo Suites 1303-1311 Tong Eng
Tel: 645230
Tel: 231-0277 Building
INDONESIA 101 Cecil Street
CANADA General Electric Company Singapore 0106
Gidden-Morton Assoc., Inc. 18th Floor, Wisma, Kosgoro Tel: 2216155
7528 Bath Road J LMH .
Mississauga, Ontario L4T 1 L2 Thamrin No. 53
SPAIN
Tel:(416) 671-8111 Jakarta, Indonesia GETSCO Division
Internacional
Tel: 321669
CHILE Juan Bravo No. 3C
Electromat S.A. Fabrica ITALY Madrid 6
De Materiales Electricos CGE-General Electric Tel: 276-7062
Casilia2103 Electronic Components Operation TAIWAN
Santiago, Chile Via Carducci 17 General Electric Technical
(562) 53031 20123 Milano Italy Services Company, Inc.
Tel: 2/807186 7th Floor
EGYPT
General Electric Inl'l Opers. JAPAN 201, Tun-Hua North Road
1085 Corniche EI Nil General Electric Japan Ltd. Formosa Plastics Bldg.
Garden City Kowa NO.35 Bldg., 4th Floor Taipei, Taiwan
Cairo. Eavpt 1-14-14Akasaka, Minato-Ku Tel: 713-1065
Tokyo 107, Japan VENEZUELA
UNITED KINGDOM Tel: 03-588-5171 General Electric De
General Electric-I ntersi I Venezuela SA
Balgrave House KOREA
General Electric (USA) Sabana Grande
Basing View Caracas
Basingstoke, Hampshire RG21 2YS Korea Co.
Tel: 256-57361 10th FI, Hanmi Bldg.
1 Kongpyung-Dong,
FRANCE Chongro-Ku
General Electric Company Seoul, Korea 110
6/8 Rue Du 4 Septembre CPO Box 871
92130Issy-Les-Moulineaux Tel: 725-8651/6
Tel: 554-97-36
MALAYSIA
GERMANY General Electric Technical
General Electric Germany Services Company, Inc.
Postfach 2963 Room 223, Kompleks
Praunheim'er Landstrasse 50 Antarabangsa
6000 Frankfurt/Main, Jalan Sultan, Ismail
Germany Kuala Lumpur, Malaysia
Tel: 760-7333 Tel: 03-482791
387

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The

GENERAL ELEC I RIC

Manuals are available from your local GE Electronic Com-

Power Electronics Semiconductor Department

GUIDE TO SPECIFICATIONS •..•..•.•..•.• , •..•.•••....•••.•.••••••...•.....••..••.• '. . • . • • . 8

2. SYSTEMS DESIGN CONSIDERATIONS

3. RELIABILITY OF OPTOELECTRONIC COMPONENTS

4. MEASUREMENT OF OPTOELECTRONIC DEVICE PARAMETERS

1. GLOSSARY OF SYMBOLS AND TERMS ..................................................... " 155

8. BIBLIOGRAPHY AND REFERENCES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .. 163

INDEX . ................................................................................ 381

PHOTO DARLINGTON OUTPUT

SCHMITT TRIGGER OUTPUT

MATCHED EMITTER DETECTQR PAIRS

PHOTO DARLINGTON OUTPUT

PAGE FIBER POWER PEAK EMISS.ION

ISOLATION CURRENT TYpiCAL

PHOTO DARLINGTON OUTPUT

HIGH VOLTAGE PHOTO DARLINGTON OUTPUT

ISOLATION CURRENT TYPICAL

PHOTO SCR OUTPUT

TRIAC DRIVER OUTPUT

PROGRAMMABLE THRESHOLD COUPLER

BILATERAL ANALOG FET OUTPUT

SCHMITT TRIGGER OUTPUT

1.1 OPTOELECTRONIC DEVICES

1.1.1 Light Sources

FIGURE 1.1: THE FORWARD BIASED LIGHT EMITTING DIODE PN JUNCTION

FIGURE 1.2: LIGHT SENSITIVE REVERSE BIASED PN JUNCTION PHOTODIODE

c. Phototransistor - The light sensitive· transistor is one of the simplest photodiode-amplifier

WIRE TO BASE ' ... _

JUNCTION PHOTODIODE REGION TRANSISTOR REGION

FIGURE 1.3: LIGHT GENERATED CURRENT IN PHOTOTRANSISTOR

FIGURE 1.4: PHOTOTRANSISTOR SWITCHING SPEED

FIGURE 1.5: USE OF PHOTOTRANSISTOR AT VERY LOW LIGHT LEVELS

lEI = IPI (hFEI +

when at + a2 = 1 then IA = 00 ICBO(t) & I CBo(2) - Leakage Currents

(ANODE TO GATE REGION

FIGURe 1.8: TYPICAL PNP PHOTOTRANSISTOR ACTION OF LASCR

1.2 OPTOELECTRONIC COMPONENTS

1.2.1 Optoelectronic Detectors and Emitters

.,801 '-.,00 ~.2301-- -.\.230~

LEAD WIRES -~~~~--- METAL TO

FIGURE 1.9: DISCRETE OPTOELECTRONIC COMPONENT PACKAGE CONCEPTS

FIGURE 1.10: GFOD/E ACTIVE DEVICE WITH FIBER OPTICS TERMINATION

B} SCHEMATIC FOR C} SANDWICH CONSTRUCTION D} REFLECTOR CONSTRUCTION CUTAWAY

FIGURE 1.13: GLASS DIELECTRIC CONSTRUCTION TECHNIQUES FOR GE 6 PIN DIP

METAL LEADS ---~

FIGURE 1.15: H24 OPTOCOUPLER. 4000V ISOLATION VOLTAGE

2.1.1 Light, Irradillnce and Effectiveness

LIGHT SENSITIVE DEVICES LIGHT EMITTING DEVICES

FIGURE 2.2: EFFECTIVENESS OF SOURCE A ON DETECTOR B

INCANDESCENT LAMP IRED WITH LENS

FIGURE 2.3: SPACIAL D!STRIBUTION OF LIGHT SOURCES

Tungsten Lamp 20000 K .003 .16

where: Pin - Power input (mW)

HE =2.6 Po/(d+ 1.1)2 for d~ 1 cm, as illustrated in Fig. 2.4

FIGURE 2.4: LENSED LED TO PHOTOTRANSISTOR COUPLING CHART

940.111 Ge,l. 880mm Go AI As

0.1 L-______L -_ _ _ _--'-_ _ _ _--L__--'L-...J