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Week 4 Quiz Answers

This document contains the answers to two quizzes on semiconductor equations for a class on semiconductor devices. The quizzes have multiple choice questions testing understanding of concepts like carrier mobility, resistivity, the Einstein relation, Fermi level, and recombination mechanisms. The document provides the student's name, ID number, course information and the questions and correct answers for the two quizzes.

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Manjunath Badiger
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112 views

Week 4 Quiz Answers

This document contains the answers to two quizzes on semiconductor equations for a class on semiconductor devices. The quizzes have multiple choice questions testing understanding of concepts like carrier mobility, resistivity, the Einstein relation, Fermi level, and recombination mechanisms. The document provides the student's name, ID number, course information and the questions and correct answers for the two quizzes.

Uploaded by

Manjunath Badiger
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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NAME:______________________________________

    PUID:  ______________________________________  
 
 
Week  4  Quiz  ANSWERS:    Semiconductor  Equations  
ECE  305:  Semiconductor  Devices  
Mark  Lundstrom  
Purdue  University,  Fall  2014  
 
Quiz  1:  
Answer  the  four  multiple  choice  questions  below  by  choosing  the  one,  best  answer.    
 
1) The  quantity,   ! µ nE represents:    
a)    The  instantaneous  velocity  at  which  electron  drift  in  an  electric  field.    
b)    The  average  velocity  at  which  electron  drift  in  an  electric  field.  
c)    The  average  power  dissipated  in  a  semiconductor  under  bias.  
d)    The  average  velocity  at  which  electrons  diffuse.  
e)    The  thermal  velocity  of  electrons.  
 
2)   As  the  doping  density  of  a  semiconductor  increases,  the  mobility  generally:  
a)    Stays  the  same  
b)    Increases.  
c)    Decreases.  
d)    First  increases,  then  decreases.  
e)    First  decreases,  then  increases.  
.
 
 
3) At  high  temperatures,  the  mobility  decreases  because:  
a)    Lattice  vibrations  scatter  the  electrons.  
b)    The  intrinsic  carrier  concentration  increases.  
c)    The  semiconductor  crystal  begins  to  melt.  
d)    The  Einstein  relation  begins  to  break  down  
e)    Because  of  Mathiesson’s  rule
 
 
4) To  decrease  the  resistivity  of  a  semiconductor,  we  can:  
a)  Increase  the  carrier  density  
b)  Decrease  the  mobility  
c)  Increase  the  electric  field  
d)  Increase  the  cross-­‐sectional  area  of  the  resistor  
e)  Decrease  the  length  of  the  resistor  
 
 
 
 
 
 

  1  
Quiz  2:  
 
Answer  the  four  multiple  choice  questions  below  by  choosing  the  one,  best  answer.    
 
1) The  Einstein  relation  relates  what  two  quantities?  
a)    The  diffusion  coefficient  and  the  minority  carrier  lifetime.    
b)    The  diffusion  length  and  the  minority  carrier  lifetime.  
c)    The  hole  and  electron  mobilities.  
d)    The  hole  and  electron  diffusion  coefficients.  
e)    The  mobility  and  the  diffusion  coefficient.  
 
 
2)   Under  what  conditions  is  the  Fermi  level  constant?  
a)    For  an  intrinsic  semiconductor.  
b)    For  an  extrinsic  semiconductor.  
c)    In  the  freezeout  regime.  
d)    In  equilibrium  for  any  semiconductor.  
e)    Where  there  is  a  temperature  gradient.  
 
 
3)   Which  of  the  following  is  NOT  a  recombination  mechanism?  
a)    Shockley-­‐Read-­‐Hall  (SRH).  
b)    Auger.  
c)    Radiative.  
 c)  Band-­‐to-­‐band.  
d)    Impact  ionization.  
e)    R-­‐G  center.  
 
 
4)   In  the  equation,   R = !n p " n ,  what  is  the  meaning  of  the  parameter,   ! n ?  
a)  It  is  the  majority  electron  lifetime.  
b)  It  is  the  minority  electron  lifetime.  
c)  It  is  the  majority  electron  diffusion  length.  
d)  It  is  the  minority  electron  diffusion  length.  
e)  It  is  the  transit  time  of  a  minority  electron  across  a  p-­‐type  region.  
 
 
 
 
 
 
 
 

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