Lecture 04 - Bipolar Junction Transistors (BJT)
Lecture 04 - Bipolar Junction Transistors (BJT)
Lecture 04 - Bipolar Junction Transistors (BJT)
TRANSISTOR
The transistor is a three-layer semiconductor device
consisting of either two N-Type and one P-Type layers of
material or two P-Type and one N-type layers of material.
The former is called an NPN transistor, while the latter is
called a NPN transistor.
Accordingly, there are two types of transistors, namely:
1
BIPOLAR JUNCTION
TRANSISTOR
Fig. 8.8
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COMMON BASE CONNECTION
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COMMON BASE CONNECTION
Example 03
In a common base connection, α = 0.95. The voltage drop
across 2 kΩ resistance which is connected in the
collector is 2V. Find the base current. (Ans: 0.05 mA)
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
The most important characteristics of common base
connection are input characteristics and output
characteristics.
1. Input characteristics.
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
The following points may be noted from these
characteristics:
1. The emitter current IE increases rapidly with small
increase in emitter-base voltage VEB. It means that
input resistance is very small.
2. The emitter current is almost independent of collector-
base voltage VCB. This leads to the conclusion that
emitter current (and hence collector current) is almost
independent of collector voltage.
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
2. Output characteristics.
It is the curve between collector current IC and collector-
base voltage VCB at constant emitter current IE. Generally,
collector current is taken along y-axis and collector-base
voltage along x-axis.
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
The following points may be noted from the output
characteristics:
1. The collector current IC varies with VCB only at very low
voltages ( < 1V). The transistor is never operated in this
region.
2. When the value of VCB is raised above 1 - 2 V, the
collector current becomes constant as indicated by
straight horizontal curves. It means that now IC is
independent of VCB and depends upon IE only. This is
consistent with the theory that the emitter current
flows almost entirely to the collector terminal. The
transistor is always operated in this region.
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
3. A very large change in collector-base voltage
produces only a tiny change in collector current. This
means that output resistance is very high.
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CHARACTERISTICS OF A COMMON BASE
CONNECTION
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COMMON EMITTER CONNECTION
In this circuit arrangement, input is applied between base
and emitter and output is taken from the collector and
emitter. Here, emitter of the transistor is common to both
input and output circuits and hence the name common
emitter connection.
Fig. 8.16 30
COMMON EMITTER CONNECTION
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COMMON EMITTER CONNECTION
Assignment 3
Develop the Relationship between β and α.
Example 04.
Determine VCB in the transistor circuit shown in Fig. below
The transistor is of silicon and has β = 150 ( Ans: 2.85V)
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CHARACTERISTICS OF A COMMON
EMITTER CONNECTION
The most important characteristics of common base
connection are input characteristics and output
characteristics.
1. Input characteristics.
It is the curve between base current IB and base-emitter
voltage VBE at constant collector-emitter voltage VCE of the
input characteristics of a CE connection.
Keeping VCE constant (say at 10 V), note the base current
IB for various values of VBE. Then plot the readings
obtained on the graph, taking IB along y-axis and VBE along
x-axis. This gives the input characteristic at VCE = 10V as
shown.
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CHARACTERISTICS OF A COMMON
EMITTER CONNECTION
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CHARACTERISTICS OF A COMMON
EMITTER CONNECTION
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CHARACTERISTICS OF A COMMON
EMITTER CONNECTION
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CHARACTERISTICS OF A COMMON
EMITTER CONNECTION
The following points may be noted from these
characteristics:
1. The collector current IC varies with VCE for VCE between
0 and 1V only. After this, collector current becomes
almost constant and independent of VCE. This value of
VCE up to which collector current IC changes with VCE is
called the knee voltage (VKnee). The transistors are
always operated in the region above knee voltage.
2. For any value of VCE above knee voltage, the collector
current IC is approximately equal to β IB.
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CHARACTERISTICS OF A COMMON
EMITTER CONNECTION
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TRANSISTOR BIASING
H/W
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