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SEMICONDUCTOR TECHNICAL DATA by MV104/D

    

This device is designed for FM tuning, general frequency control and tuning, or any
top–of–the–line application requiring back–to–back diode configurations for minimum
signal distortion and detuning.
DUAL
• High Figure of Merit  Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz
VOLTAGE VARIABLE
• Guaranteed Capacitance Range CAPACITANCE DIODE
37–42 pF @ VR = 3.0 Vdc (MV104)
• Dual Diodes – Save Space and Reduce Cost
• Monolithic Chip Provides Near Perfect Matching – Guaranteed ± 1.0%
(Max) Over Specified Tuning Range

1
2
3
Pin 1 Pin 3
A1 A2
CASE 29 – 04, STYLE 15
TO–92 (TO – 226AA)
Pin 2 C

MAXIMUM RATINGS (EACH DIODE)

Rating Symbol Value Unit
Reverse Voltage VR 32 Vdc
Forward Current IF 200 mAdc
Total Power Dissipation @ TA = 25°C PD 280 mW
Derate above 25°C 2.8 mW/°C
Junction Temperature TJ +125 °C
Storage Temperature Range Tstg – 55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 32 — — Vdc
(IR = 10 µAdc)
Reverse Voltage Leakage Current TA = 25°C IR — — 50 nAdc
(VR = 30 Vdc) TA = 60°C — — 500
Diode Capacitance Temperature Coefficient TCC — 280 — ppm/°C
(VR = 4.0 Vdc, f = 1.0 MHz)

CT, Diode Capacitance Q, Figure of Merit CR, Capacitance Ratio

VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc C3/C30
pF f = 100 MHz f = 1.0 MHz
Device Min Max Min Typ Min Max
MV104 37 42 100 140 2.5 2.8

REV 1

Motorola Small–Signal
Motorola, Inc. 1997 Transistors, FETs and Diodes Device Data 1
MV104
TYPICAL CHARACTERISTICS (Each Diode)

100 550

70
CT , DIODE CAPACITANCE (pF)

450

Q, FIGURE OF MERIT
40 350

250 TA = 25°C
20 f = 100 MHz

150

10 50
0.3 0.5 1.0 2.0 3.0 5.0 7.0 10 20 30 0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Diode Capacitance (Each Diode) Figure 2. Figure of Merit versus Voltage

2000 1.04

CT , DIODE CAPACITANCE (NORMALIZED)

1.03 VR = 2.0 V
1000 VR = 3.0 Vdc
Q, FIGURE OF MERIT

TA = 25°C 1.02
500 4.0 V
1.01

200 1.00 30 V

0.99
100
0.98 NORMALIZED to CT
50 at TA = 25°C
0.97

20 0.96
10 20 30 50 70 100 200 300 –75 –50 –25 0 +25 +50 +75 +100 +125
f, FREQUENCY (MHz) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Figure of Merit versus Frequency Figure 4. Diode Capacitance versus Temperature

100
50 TA = 125°C
20
I R , REVERSE CURRENT (nA)

10
5
2 TA = 75°C
1
0.5
0.2 TA = 25°C
0.1
0.05
0.02
0.01
0 5.0 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Reverse Current versus Reverse Voltage

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 MV104
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 15:
CASE 029–04 PIN 1. ANODE 1
(TO–226AA) 2. CATHODE
3. ANODE 2
ISSUE AD

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

MV104

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4 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data

MV104/D