Chapter 9 Theory and Design of Ferrimagnetic Components

9.6 Ferrite circulator

1 2 0 0 1 1 2 0 1 0
   
1 0 0 0 0 1
   
3 0 1 0  3 1 0 0 

Discussion
1. Circular structure (p.487, Fig.9.22) includes stripline, ferrite
disk and bias magnet.
2. A lossless, small mismatched  circulator
   1  2 
 
1     
2

  1  2  
 
3. Terminate one port of circulator  isolator
9-1 微波電路講義
 (derivation of 2 for a lossless, small mismatched  circulator)

  
     1
2 2 2
  
lossless

  *  *  *  0

  

1 2  1,  1,  1
 *  *  0    
2    1    1 
2 2 2
3
   1  2 
 
 1   2   
  1  2  
 
isolation: S 23  S12  S31  

9-2 微波電路講義
 Chapter 10 Noise and Nonlinear Distortion

10.1/2 Noise in microwave circuits/Noise figure

noise power, equivalent noise temperature, noise figure of
various networks
10.3/4 Nonlinear distortion/Dynamic range
gain compression, third-order intermodulation distortion,
3rd-order intercept point, linear and spurious free dynamic
range

10-1 微波電路講義
10.1/10.2 Noise in microwave circuits/Noise figure
• noise power, equivalent noise temperature, noise figure
noisy
resistor rms voltage vn  4kTBR
v(t)
at microwave frequencies:white noise source
R, T°k
Pn noisy Pn
noisyless
R T lossless R  R 0°k Te, B R
lossless
BPF BPF
maximum power delivered from the noisy resistor
v 4kTBR
Pn  ( n )2 R  2
R  kTB
2R 4R
equivalent noise temperature Te  Pn/kB
excess noise ratio
Pn  Po Te  To
ENR(dB)  10 log  10 log , T o  290 o K
Po 10-2
To 微波電路講義
 Pi=Si+Ni
Po=So+No
noisy
R, To
Si network R
G, B, Te

So  GSi , N i  kTo B, N o  Gk (To  Te ) B

Si N i Si N o 1 Gk (To  Te ) B T
noise figure F     1 e  1
So N o So N i G kTo B To
Te  ( F  1)To

Ni  kTo B
GkTo B  GN i   Gk (To  Te ) B
noisy   No
R, To GkTe B  Gk ( F  1)To B  GN add   GkTo BF
Si network
G, B, Te R
GSi  So

10-3
微波電路講義
Discussion
1. noisy amplifier with Te
Pn=GkTeB Pn=GkTeB

R 0°k G, Te, B R  R Te G, 0°k, B R

noisy noiseless
2. Y-factor (noise figure, noise temperature) measurement method
hot load P1, P2 P1 Gk (T1  Te ) B T1  Te
R, T1 DUT Y  
P2 Gk (T2  Te ) B T2  Te
R T1  YT2 T
cold load G, Te, B  Te  , F  1 e
R, T2 Y 1 To

3. Ex10.1 X-band amplifier, G=20dB, B=1GHz, gives Y-factor

measured results as T1=290°k, P1= -62dBm, T2=77°k, P2= - 64.7dBm.
Y= P1-P2 = 2.7dB = 1.86  Te =170°k  F =1.585=2dB
if Ts = 450°k  Pn = k(Ts+Te)BG= -60.7dBm 微波電路講義
10-4
 4. F of a passive lossy matched 2-port circuit
Si
@To thermal equilibrium N o  N i  kTo B, So 
L
R To L=1/G R Si N i S N T
(Te, F) B F  i o  L( 1  e )
So N o So N i To
R 1 G
@To  Te  ( L  1)To  To , N add  kTe B  ( L  1) kBTo
 1 1  G
 N o  kTo B  L kTo B  L kTe B  ( L  1)T
   @T , Te  ( L  1)T , F  1 
  Te  ( L  1)To , F  L  To

5. Ex. 10.3 a matched lossy Wilkinson power divider (IL=Lw) with

port 3 connected to a matched load, find its F
0 11
-j 
0 0  , L 
1
S = 1  2 Lw
2 Lw 
2
S 21
1 0 0 
T T
Te  ( L  1)T  (2 Lw  1)T , F  1  e  1  (2 Lw  1)
To To
if Lw  1 (lossless), T  To  F  2  3dB
10-5 微波電路講義
 6. F of a cascaded circuit

G1, F1 G2, F2 GN, FN

Si N i Si N o
F 
So N o So N i
N N N

1 kTo B Π Gi  k ( F1  1)To B Π Gi  k ( F2  1)To B Π Gi  ...  k ( FN  1)To BGN

 N
i 1 i 1 i 2

Π Gi kTo B
i 1

F2  1 F3  1 F 1
 1  ( F1  1)    ...  N
G1 G1G2 G1...GN 1
F2  1 F3  1 F 1
 F1    ...  N
G1 G1G2 G1...GN 1
Te 2 T TeN
T  Te1   e 3  ... 
G1 G1G2 G1...GN 1

10-6 微波電路講義
7. noise analysis of a microwave receiver
Ga, Fa Lf Lm, Fm

N i , Si BPF No, So
TREC

i/p noise ower from antenna TA  N i  kTA B

Ff  1 Fm  1
receiver noise FREC  Fa    TREC  ( FREC  1)T
Ga Ga G f
Ga Gm
o/p signal power So  Si  Si GREC
Lf
o/p noise power N o  ( N i  kBTREC )GREC  kB (TA  TREC )GREC
So Si
o/p 
N o kB (TA  TREC )
10-7 微波電路講義
 8. Ex.10.2
Ga, Fa Lf Lm, Fm TA  150o k
Ga  10dB  10, Fa  2dB  1.58
BPF L f  1dB  1.26, G f  0.79
N i, S i TREC No, So Gm  3dB  0.5, Fm  4dB  2.51
BIF  10 MHz , To  290o k

i/p noise power N i  kTA B  1.38 1023  150  107  2.07  1014 W  106.8dBm
Ff  1 Fm  1
receiver noise figure FREC  Fa    1.8  2.5dB
Ga Ga G f
receiver noise temperature TREC  ( FREC  1)To  232o k
Ga Gm
receiver gain GREC   3.95  6dB
Lf
o/p noise power N o  kB (TA  TREC )GREC
 1.38 10 23 107  382  3.95  2.08  1013W  96.8dBm
96.8 dBm 6 dB
if SNRo  20dB  So  76.8dBm  Si  82.8dBm  SNRi  24dB
10-8 微波電路講義
9. F of a passive lossy mismatched (ΓS≠0,Γout≠0) 2-port circuit
Zg
S21 (1   S )
2 2
[S] ZL Ga  ..(12.12)
1  S11 S (1   out )
2 2
T
Ga  S21 , for  S  out  0
2

S in out L
i/p noise power N i  kTB
Pavn PL  L out 1
available power gain Ga    1
Pavs Pin   La
in S

available o/p noise power N o  Ga ( N i  N added )  Ga k (T  Te ) B

 kTB(thermal equilibrium)
1  Ga T 1  Ga T ( L  1)T
 Te  T  ( La  1)T , F  1  e  1   1 a
Ga To Ga To To

10-9 微波電路講義
 10. F of a mismatched (ΓS≠0) lossy line
Zg l  1  j l 
 0 e 
@T Zo S    1 L

Zo,Te, , L   j l 
 L e 0 
 
Z g  Zo
S in out L=0 S 
Z g  Zo
S12 S21 S  S  j 2  l
 out  S 22   e
1  S11 S L
1
 
2
S 21 (1   S )
2 2 (1 S ) L (1  
2
L S ) 1
Ga    
1  S11 S (1   out ) S L2   S
2 2 2 2
La
1 2
L
( L  1)( L   S )
2
( La  1)T
 Te  ( La  1)T  T  ( L  1)T S 0
, F  1
L(1   S )
2
To

10-10 微波電路講義
 11. F of a mismatched (Γin≠0) amplifier
Zo
@To
G, F, B Zo

S in
N i  kTo B
N o  kToGB (1  in )  kTo ( F  1)GB  kToGB( F   in )
2 2

So  G (1   in ) Si
2

kTo GB ( F  in ) F  in

2 2
S / Ni SN Si
 Fm  i  i o  
So / N o So N i G (1   in ) Si
2
kTo B 1   in
2

F 1
 1 , in  0, Fm  F
1  in
2

10-11 微波電路講義
 10.3/4 Nonlinear distortion/Dynamic range

• gain compression 1dB compression point

vo  ao  a1vi  a2vi2  a3vi3  ... Pout

1dB
OP1dB
OP1dB= IP1dB+G-1dB slope = 1
DRl
MDSout
linear dynamic range of an amplifier
with gain G
MDSin IP1dB Pin
MDSin (dBm) = kTB+F (+3dB)
MDSout (dBm) = kTB+F+G (+3dB) “dB-plot”
DRl (dB) = OP1dB - MDSout

10-12 微波電路講義
 • intermodulation distortion
vo  ao  a1vi  a2vi2  a3vi3  ...
vi2 : w1 , w2  2w1 , 2w2 , w1  w2 , w1  w2 2nd-order products
vi3 : w1 , w2  3w1 ,3w2 , 2w1  w2 , 2w1  w2 , 2w2  w1 , 2w2  w1 3rd- order products
2w1  w2 , 2w2  w1: 3rd- order intermodulation distortion (IMD3)
3rd-order intercept point (IP3)
OIP3(dB)=G+IIP3 Pout
OIP3
“dB-plot”
Pw1
slope = 1
C/I ~1/PIMR
PIMD
P2w1-w2
amplifier
1 2 1 2 
slope = 3
Pin
IIP3
10-13 微波電路講義
Discussion
1. device nonlinearity effect
If vo  a1vi  a2 vi2  a3vi3
3
single tone input vi  A cos w1t  vo w1
 (a1 A  a3 A3 ) cos w1t
4
3
 voltage gain@w1 Gv  a1  a3 A2
4
two tone input vi  A(cos w1t  cos w2t )
3
 vo 2 w1  w2
 a3 A3 cos(2w1  w2 )t
4
3 4 a1
at third-order intercept point a1 A  a3 A3  A2 
4 3 a3
3
( a3 A3 ) 2
1 (a1 A) 2 a 2 3
1 4 9 a32 A6
 OIP3   , P2 w1  w2 ( PIMD ) 
1

2 R 3 a3 R 2 R 32 R
1 (a1 A) 2 3
Pw31 [ ]
2 R 9 a32 A6
   P2 w1  w2  3Pw1  2OIP3  P2 w1  w2 (dBm)
OIP32 2 a13 2 32 R
[ ]
3 k3 R 10-14 微波電路講義
 2. spurious-free dynamic range
Pout
Pw1
DR f 
P2 w1  w2 OIP3
P2 w1w2  Pn Pw1
1 2
3 3
P2 w w OIP 3 OIP3 23
 1 2
( ) P2w1-w2
P2 w1  w2 Pn DRf
P2 w1w2  Pn Pn
2
DR f (dB)  (OIP3  Pn ) “dB-plot” Pin
3
3. Ex. 10.5 A receiver with F=7dB, OP1dB=25dBm, G=40dB,
OIP3=35dBm, B=100MHz, i/p antenna noise temperature TA=150k,
desired SNRo=10dB, find DRl and DRf
o/p noise power Pn  GkB[TA  ( F  1)To ]  10 4 1.38 10 23 108  [150  (5  1)  290]  47.4dBm
DRl  OP1dB  Pn  25  (47.4)  72.4dB
2 2
DR f  (OIP3  Pn )  55dB, or (OIP3  Pn )  SNRo  45dB
3 3
10-15 微波電路講義
 4. Cascaded two-port circuits
v 2 w1  w 2 ,1 v o , Po
vi G1, OIP3,1 G2, OIP3,2
v 2 w1  w 2 ,2

Po  PG
i 1G2  Po ,1G2 (@ fundamental frequency wo )

Po3 Po3 Z o
 P2 w1  w2  v2 w1  w2  P2 w1  w2 Z o 
OIP32 OIP3
worst case, two intermods @2 w1  w2 add in phase 
G2 Po3,1Z o Po3 Z o G2 ( Po3 / G23 ) Z o Po3 Z o
v2 w1  w2  v2 w1  w2 ,1 G2  v2 w1  w2 ,2    
OIP3,1 OIP3,2 OIP3,1 OIP3,2
1 1
(  ) Po3 Z o
G2OIP3,1 OIP3,2
v22w1  w2 1 1 2 3 Po3
P2 w1  w2  (  ) Po 
Zo G2OIP3,1 OIP3,2 OIP32
1 1 1
  
OIP3 G2OIP3,1 OIP3,2
微波電路講義
10-16
5. Ex. 10.4 An LNA with G1=20dB and OIP3,1=22dBm, a mixer with
G2=-6dB and IIP3,2=13dBm, find the cascaded PIP3
G1  100, G2  0.25, OIP3,1  22dBm  158mW , OIP3,2  13  6  7dBm  5mW
1 1 1 1 1
     OIP3  4.4mW  6.4dBm
OIP3 G2OIP3,1 OIP3,2 0.25 158 5

(case 2, interchange LNA and mixer, prob.10.15)

G1  0.25, OIP3,1  13  6  7dBm  5mW
G2  100, OIP3,2  22dBm  158mW
1 1 1 1 1
     OIP3  120mW  20.8dBm
OIP3 G2OIP3,1 OIP3,2 100  5 158

6. OIP3 of a cascaded circuit

1 1 1 1
   .... 
OIP3 Gn ...G2OIP3,1 Gn ...G3OIP3,2 OIP3,n

微波電路講義
10-17
Solved problems: Prob. 10.11 F of a balanced amplifier

vi , Si , Ni v1, A , N1, A v2, A , N2, A

0 1 j 0  G, F
  v1, B , N1, B v2, B , N2, B
1 1 0 0 j 
2L  j 0 0 1 
 
 0 j 1 0  L L
G, F
vo , So , No

1 2 1 1 G G
Si  vi , v1, A  vi , v1, B  jvi  v2, A  vi , v2, B  jvi
2 2L 2L 2L 2L
1 1 jv G jvi G jvi G
vo  j v2, A  v2, B  i  
2L 2L 2L 2L L
1 1 G G
So  vo2  vi2 2  2 Si
2 2 L L 10-18 微波電路講義
 vi , Si , Ni v1, A , N1, A v2, A , N2, A

0 1 j 0  G, F
  v1, B , N1, B v2, B , N2, B
1 1 0 0 j 
2L  j 0 0 1 
  L
0 j 1 0 G, F L
vo , So , No

thermal equilibrium @To  N1, A  N1, B  kTo B

N 2, A  N 2, B  kTo BG  kTo ( F  1) BG  kTo BGF
1 1 1 1 1 GF 1 GF  L  1
No  N 2, A  N 2, B  kTe B  kTo BGF  (1  )kTo B  kTo B (  1  )  kTo B
2L 2L L L L L L L
1 1 1 1
coupler F  L, Te  ( F  1)To  ( L  1)To  N add  kTe B  ( L  1)kTo B  (1  )kTo B
L L L L
Si / Ni Si N o L2 GF  L  1 L
FBA     LF  ( L  1)  FBA  F , for L =1
So / N o So N i G L G

ADS examples: Ch10_prj

10-19 微波電路講義
 Chapter 11 Active RF and Microwave Devices

11.1 Diodes and diode circuits

Schottky diode, PIN diode, varactor diode
11.2/3 Bipolar junction transistors/Field effect transistors
BJT, MESFET
11.4 Microwave integrated circuits
HMIC, MMIC
11.5 Microwave tubes

11-1 微波電路講義
 11.1 Diodes and diode circuits
• Diode
I (V )  I s (eV  1)
DC I-V characteristics
I small signal approximation V  Vo  v
+
dI 1 2 d 2I
V I (V )  I (V o )  v  v 2
 ...
dV V 2 dV V
- o o

1 2
 I o  vG d  v G ' d  ...
2
 Io i Rs
i G ' d  G d
Cp Lp
AC model
Cj(Vo) Rj(Vo) Rj: junction resistance = 1/Gd
Cj: junction capacitance Cj Rj

applications: detector, mixer,...

11-2 微波電路講義
 Discussion
1. square-law detector
v(t )  Vo  vo cos wot
vo2
i (t )  I o  voGd cos wot  G 'd cos 2 wot
2
vo2 vo2
 I o  G 'd  voGd cos wot  G 'd cos 2wot
4 4
vo2
G 'd
I dc G 'd
current sensitivity  i  4
 2  , voltage sensitivity  v   i R j
Pin vo 2Gd
Gd
2
AM demodulation
 Pin
v(t )  vo [1  m(t ) cos wmt ] cos wot
v2 vo2
i (t )  vGd  G 'd  vGd  G 'd [2m(t ) cos wmt  ...]
2 4
11-3 微波電路講義
 2. spectrum analyzer

variable YIG IF Log

attenuator filter filter amplifier

YIG video
osc. amplifier
unresolvable
saw tooth signal
generator display

IF filter bandwidth  spectrum resolution

(resolution bandwidth)

swept frequency range

11-4 微波電路講義
 3. PIN diode

Cj

P Rf Rr
I
N Li Li

@ forward @ reverse
bias bias

applications: microwave switch, pulse modulator, control elements for

phase shifter and attenuator,...

11-5 微波電路講義
4. SPST switch

+ + + +
Zo Vo VL Zo Zo Vo VL Zo
- - - -
series switch shunt switch

VL
IL  20 log
Vo
2Z o 2Z d
IL  20 log IL  20 log
2Z o  Z d 2Z d  Z o
 R f  jwLi forward bias

Zd   1
Rr  jwLi  reverse bias

 jwC j

11-6 微波電路講義
 (derivation)
Zo 2Z o
VL  2Vo  Vo
VL 2Z o  Z d 2Z o  Z d
Zo Zd
Zo VL 2Z o
2Vo IL  20 log  20 log
Vo 2Z o  Z d

series switch
Zo Zd
Z o // Z d Zo  Zd
VL VL  2Vo  Vo
Z o  Z o // Z d Z Z
Zo  o d
Zo Zo  Zd
2Vo Zd Zo
2Z d
 Vo
2Z d  Z o
VL 2Z d
shunt switch IL  20 log  20 log
Vo 2Z d  Z o

11-7 微波電路講義
5. Ex.11.1 Cj=0.5pF, Li=0.5nH, Rr=2, Rf=1.5, f=1.8GHz, Zo=50

 1.5+j5.6 forward bias

Zd  
 2.0  j171.2 reverse bias
0.14dB ON 0.11dB ON
series switch IL   shunt switch IL  
 6 dB OFF 13.3dB OFF

6. SP2T switch

/4 /4

11-8 微波電路講義
 7. switched-line phase shifter

1

2    2  1   (l2  l1 )

8. 2 bit phase shifter 90, 180

22=4 → 0, 90, 180, 270

0o 0o
0
90
90o 180o 180
270

11-9 微波電路講義
3 bit phase shifter 45, 90, 180
23=8 → 0, 45, 90, 135, 180, 225, 270, 315

0o 0o 0o

45o 90o 180o

4 bit phase shifter 22.5, 45, 90, 180

24=16 → 0, 22.5, 45, 67.5, 90, 112.5, 135, 157.5,180,
202.5, 225, 247.5, 270, 292.5, 315, 337.5

11-10 微波電路講義
9. load-line phase shifter
 jb 2
 ,T  1  
2  jb 2  jb
Zo  jB T Zo 1 b
b  BZ o , T   tan
2

(derivation)
1 1 Zo Z 1
Z L  Z o //   , L  , b  BZ o
 jB 1  jBZ o Z o 1  jb
jB 1
Zo
1
1
Z  Z o Z L / Z o  1 1  jb  jb
 L   
Z L  Zo Z L / Zo  1 1
 1 2  jb
1  jb

11-11 微波電路講義
 /4 e

jB jB Zo Ze Zo

 0 jZ o    BZ o jZ o 
 1 0   1 0   
(left)   j    1
 jB 0   Z 0   jB 0   j (  B Z o )  BZ o 
2

 o   Z o 
 cos e jZ e sin  e 
(right)  j sin  e 
 cos e  b
 Z e 
 1  b2
cos  e   BZ o  b e   b 1
2 e
 Zo Zo 
Ze   small b b
sin  e 1 b 2 Z e  Z o (1  )
2
11-12 微波電路講義
10. reflection-type phase shifter
1
 / 2
diode ON,   e j
diode OFF,   e j (   ) 
 / 2

j 90

hybrid

 0   0 
0 1 j 0  1   1  0 1 j 0     0 
     1 0 0 j     0 
1 1 0 0 j  0   2 1   2   
 ,
2 j 0 0 1  0  j  2  j 0 0 1   j   0 
         
0 j 1 0  0   2  0 j 1 0   2   j 
 0   0 
  

11-13 微波電路講義
11. varactor diode
applications: VCO, frequency multiplier

11-14 微波電路講義
10.2/3 Bipolar junction transistors/Field effect transistors
• microwave FET (depletion type)
Vg(-) Vd(+)
D gate length

S G D gate
G
width
S

Ids
Vgs = 0V

Vgs = - 1V

Vgs = Vp
Vds
11-15 微波電路講義
 small-signal equivalent circuit

G Cgd
D S G D
Ig
Ri
+ Rds Cds
Cgs gmVgs
Vgs
S-
gate length   f 
short circuit current gain gate width   power 
Id g mVgs g
Gi
SC
   m
Ig Ig wC gs
gm
GiSC  1@ fT  cut off frequency fT 
2Cgs
S ( f , bias, T, Pin , device geometry, device fabrication,...)

11-16 微波電路講義
 • microwave BJT
Ri Cc
C B
C
+
R Vbe C gmVbe
B
-
E E
gm
fT 
2C
Vb(+) Vc(+)
Ice
Ib=+ mA

Vce

11-17 微波電路講義
 • comparison of microwave transistors
Property D-mode III-V HBT Si BJT SiGe HBT MOSFET
FET/HEMT

Cost moderate and high and low and moderate and low to
decreasing decreasing mature decreasing moderate
Single polarity no yes yes yes yes
supply
Integration excellent excellent OK at low OK at low OK at low
capability (MMIC)
Parasitic loss very good very good modest modest modest
Turn-on voltage
control modest very good excellent excellent good

PAE excellent very good poor moderate very good

11-18 微波電路講義
10.5 Microwave integrated circuits
Discussion
1. HMIC (Fig. 11.25)
MMIC (Figs. 11.26 and 11.27)
2.
Feature MMIC HMIC

substrate semi-insulator insulator

interconnections deposited wire-bonded / deposited
distributed elements microstrip, CPW microstrip, CPW
lumped elements deposited discrete/deposited
solid state device deposited discrete
controlled parasitics Yes No
labor intensive No Yes
reparability No Yes
equipment costs high low

11-19 微波電路講義
 Feature MMIC HMIC

mass production Yes No

debugging difficult easy
integrated with digital possible impossible
and electrooptic ICs
cost low high
size and weight small large
design flexibility very good good
circuit tweaking impractical practical
broadband performance relatively good limited
reproducibility excellent good
reliability excellent good

11-20 微波電路講義
11.5 Microwave tubes
Discussion
1. Solid-state sources operate at lower power and lower frequency,
while microwave tubes operate at higher power and higher
frequency (p.553, Fig.11.28).
2. Solid-state sources use diode circuitss (Gunn diode, IMPATT diode)
or transistor circuits (GaAs MESFET, DRO, YIG oscillator) with
power combining circuits for higher output power (p.539).
3. Microwave tubes
power-frequency for oscillator tubes (p.555, Fig. 11.29)
power-frequency for amplifier tubes (p.556, Fig. 11.30)

微波電路講義
11-21