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Digitron Semiconductors: C106 Series Silicon Controlled Rectifier

Digitron Semiconductors C106 series silicon controlled rectifiers are available in various voltage ratings from 15V to 600V. The document provides maximum ratings, thermal characteristics, electrical characteristics, and mechanical characteristics for the devices. Key specifications include forward current up to 4A, blocking voltages from 15V to 500V, junction temperature range from -40°C to 110°C, and industry standard TO-126 packaging. High reliability screened versions per military standards are also available.
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0% found this document useful (0 votes)
68 views

Digitron Semiconductors: C106 Series Silicon Controlled Rectifier

Digitron Semiconductors C106 series silicon controlled rectifiers are available in various voltage ratings from 15V to 600V. The document provides maximum ratings, thermal characteristics, electrical characteristics, and mechanical characteristics for the devices. Key specifications include forward current up to 4A, blocking voltages from 15V to 500V, junction temperature range from -40°C to 110°C, and industry standard TO-126 packaging. High reliability screened versions per military standards are also available.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DIGITRON SEMICONDUCTORS

C106 SERIES SILICON CONTROLLED RECTIFIER


Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak repetitive forward and reverse blocking voltage (1)

(RGK = 1kΩ, TJ = -40 to +110°C)


C106Q 15
C106Y 30
C106F 50
C106A VRRM, VDRM 100 Volts
C106B 200
C106C 300
C106D 400
C106E 500
C106M 600
Forward current RMS (all conduction angles) IT(RMS) 4 Amps
Average forward current (TA = 30°C) IT(AV) 2.55 Amps
Peak non-repetitive surge current
ITSM Amps
(1/2 cycle, 60Hz, TJ = -40 to +110°C) 20
Circuit fusing considerations
I2 t A2s
(t = 8.3ms) 1.65
Peak gate power PGM 0.5 Watts
Average gate power PG(AV) 0.1 Watts
Forward peak gate current IGFM 0.2 Amps
Peak reverse gate voltage VGRM 6 Volts
Operating junction temperature range TJ -40 to +110 °C
Storage temperature range Tstg -40 to +150 °C
Mounting torque (2)
6 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and
heatsink contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.

THERMAL CHARACTERISTICS
Characteristic Symbol Maximum Unit
Thermal resistance, junction to case RӨJC 3 °C/W
Thermal resistance, junction to ambient RӨJA 75 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C)


Characteristic Symbol Min. Typ. Max. Unit
Peak forward or reverse blocking current
(VAK = rated VDRM or VRRM, RGK = 1kΩ)
IDRM, IRRM µA
TJ = 25°C - - 10
TJ = 110°C - - 100
Forward “on” voltage
VTM Volts
(IFM = 1A peak) - - 2.2
Gate trigger current (continuous dc)
(VAK = 6Vdc, RL = 100Ω) IGT - 30 200 µA
(VAK = 6Vdc, RL = 100Ω, TC = -40°C) - 75 500
Gate trigger voltage (continuous dc)
(VAK = 6Vdc, RL = 100Ω) VGT 0.4 0.60 0.8 Volts
(VAK = 6Vdc, RL = 100Ω, TC = -40°C) 0.5 0.75 1.0

144 Market Street phone +1.908.245-7200 sales@digitroncorp.com


Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130118
DIGITRON SEMICONDUCTORS
C106 SERIES SILICON CONTROLLED RECTIFIER

Characteristic Symbol Min. Typ. Max. Unit


Holding current
(VD = 12Vdc, RGK = 1kΩ)
TJ = 25°C IH 0.3 - 3 mA
TJ = -40°C 0.4 - 6
TJ = 110°C 0.14 - 2
Forward voltage application rate
dv/dt V/µs
(TJ = 110°C, RGK = 1000Ω, VD = rated VDRM) - 8 -
Turn-on time tgt - 1.2 - µs
Turn-off time tq - 40 - µs

MECHANICAL CHARACTERISTICS
Case TO-126
Marking Body painted, alpha-numeric
Pin out See below

TO-126

Inches Millimeters
Min Max Min Max
A 0.425 0.435 10.80 11.050
B 0.295 0.305 7.490 7.750
C 0.095 0.105 2.410 2.670
D 0.020 0.026 0.510 0.660
F 0.115 0.125 2.920 3.180
G 0.091 0.097 2.310 2.460
H 0.050 0.095 1.270 2.410
J 0.015 0.025 0.380 0.640
K 0.595 0.655 15.110 16.640
M 3° TYP 3° TYP
Q 0.148 0.158 3.760 4.010
R 0.045 0.055 1.140 1.400
S 0.025 0.035 0.640 0.890
U 0.145 0.155 3.680 3.940
V 0.040 - 1.020 -

144 Market Street phone +1.908.245-7200 sales@digitroncorp.com


Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130118
DIGITRON SEMICONDUCTORS
C106 SERIES SILICON CONTROLLED RECTIFIER

144 Market Street phone +1.908.245-7200 sales@digitroncorp.com


Kenilworth NJ 07033 USA fax +1.908.245-0555 www.digitroncorp.com

Rev. 20130118

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