PD -91594C

IRG4BC30KD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
Features C

• High short circuit rating optimized for motor control, VCES = 600V
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high VCE(on) typ. = 2.21V
G
switching speed
• tighter parameter distribution and higher efficiency @VGE = 15V, IC = 16A
E
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, n-ch an nel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristic
reduce noise, EMI and switching losses
• This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
• For hints see design tip 97003 D 2Pak
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 28
IC @ TC = 100°C Continuous Collector Current 16
ICM Pulsed Collector Current Q 58 A
ILM Clamped Inductive Load Current R 58
IF @ TC = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 58
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 100
W
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– 1.2
RθJC Junction-to-Case - Diode 2.5
RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)U ––– 40
Wt Weight 1.44 ––– g
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IRG4BC30KD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.21 2.7 IC = 16A VGE = 15V
— 2.88 — IC = 28A See Fig. 2, 5
— 2.36 — V IC = 16A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 5.4 8.1 — S VCE = 100V, IC = 16A
ICES Zero Gate Voltage Collector Current — — 250 VGE = 0V, VCE = 600V
µA
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 IC = 12A See Fig. 13
V
— 1.3 1.6 IC = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 67 100 IC = 16A
Qge Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 25 37 VGE = 15V
td(on) Turn-On Delay Time — 60 —
tr Rise Time — 42 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 160 250 IC = 16A, VCC = 480V
tf Fall Time — 80 120 VGE = 15V, RG = 23Ω
Eon Turn-On Switching Loss — 0.60 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.58 — mJ and diode reverse recovery
Ets Total Switching Loss — 1.18 1.6 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on) Turn-On Delay Time — 58 — TJ = 150°C, See Fig. 11,14
tr Rise Time — 42 — IC = 16A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 210 — VGE = 15V, RG = 23Ω
tf Fall Time — 160 — Energy losses include "tail"
Ets Total Switching Loss — 1.69 — mJ and diode reverse recovery
LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 920 — VGE = 0V
Coes Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 27 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Irr Diode Peak Reverse Recovery Current — 3.5 6.0 TJ = 25°C See Fig.
A
— 5.6 10 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 80 180 TJ = 25°C See Fig.
nC
— 220 600 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — TJ = 25°C See Fig.
A/µs
During tb — 160 — TJ = 125°C 17

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 IRG4BC30KD-S
2.5

For both:
D uty cy cle: 50%
2.0 TJ = 125°C
55°C
T s ink = 90°C
LOAD CURRENT (A)

G ate drive as specified

P ow e r Dis sip ation = 1.8 W
1.5
S q u a re w a v e :
6 0% of rate d
volta ge
1.0
I

0.5 Id e a l d io d e s

0.0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100


TJ = 25 o C
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)


TJ = 150 o C

TJ = 150 o C
10 10


TJ = 25 oC
1 1

0.1

V GE = 15V
20µs PULSE WIDTH
0.1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 10 15
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC30KD-S

30 4.0
V GE = 15V
80 us PULSE WIDTH 
I C = 32 A

VCE , Collector-to-Emitter Voltage(V)

25
Maximum DC Collector Current(A)

20 3.0

15 
I C = 16 A

10 2.0 
I C = 8.0A
8A

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( ° C) TT , Junction Temperature ( °C)
J J, Junction Temperature ( °C )

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

10
Thermal Response (Z thJC )

1
D = 0.50


0.20

0.10 P DM
0.1 0.05 t1
0.02 t2


0.01 SINGLE PULSE
(THERMAL RESPONSE) Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4BC30KD-S


1500


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 16A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

1200 Coes = Cce + Cgc 16
C, Capacitance (pF)

900

Cies
12

600 8

300 C
oes 4

C
res
0 0
1 10 100 0 20 40 60 80
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage


10


23Ω
1.50
V CC = 480V RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V 
IC = 32 A
1.40 I C = 16A
Total Switching Losses (mJ)
Total Switching Losses (mJ)


IC = 16 A
1.30

1

IC = 8.0A
8A
1.20

1.10

1.00 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG, ,Gate
RG Gate Resistance Ω)
Resistance ((Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature

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IRG4BC30KD-S


5.0
Ω

100
RG = 23
Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC
125°C
VCC = 480V

I C , Collector-to-Emitter Current (A)

4.0 VGE = 15V
Total Switching Losses (mJ)

3.0

10

2.0

1.0

SAFE OPERATING AREA

0.0 1
0 8 16 24 32 40 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Insta ntane ous Forward C urrent - I F (A )

TJ = 15 0°C

10 TJ = 12 5°C

TJ = 2 5°C

1
0.4 0.8 1.2 1.6 2.0 2.4
Fo rwa rd V oltage D rop - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 IRG4BC30KD-S
160 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C

120

I F = 24 A
I F = 2 4A

I IR R M - (A )
t rr - (ns)

I F = 1 2A
I F = 1 2A
80 10
I F = 6 .0 A
I F = 6 .0A

40

0 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
d i(re c )M /d t - (A /µ s)

400 1000
IF = 6.0 A
Q R R - (n C )

I F = 24 A
I F = 12 A
I F = 12 A
200 100

I F = 2 4A
I F = 6.0 A

0 10
100 1000 100 1000
d i f /dt - (A /µs) d i f /d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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IRG4BC30KD-S

Same ty pe
device as
D .U.T.

430µF 90%
80%
of Vce D .U .T.
Vge 10%

VC
90%
t d(off)

10%
Fig. 18a - Test Circuit for Measurement of IC 5%
tr tf
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs
Eon Eoff
E ts = (Eon +Eoff )

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Ic
Q rr = Ic ddt
id t
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
Vce
ce ieIcd t dt

∫
E on = V t4
t1 E re c = VVd
d idIc
d t dt
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4BC30KD-S
V g G A T E S IG N AL
D EV IC E UN DE R T E ST

C UR R EN T D.U .T .

V O LT A G E IN D .U.T .

C UR R EN T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
1 000 V Vc *
4 X IC @25°C
0 - 480V
50V
6 00 0µ F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

Tape & Reel Information

D2Pak
TRR

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .6 0 (.0 6 3)
4 .1 0 ( .1 6 1 )
1 .5 0 (.0 5 9) 0 .3 6 8 (.0 1 4 5 )
3 .9 0 ( .1 5 3 )
0 .3 4 2 (.0 1 3 5 )

F E E D D I R E C T IO N 1 .8 5 ( .0 7 3 ) 1 1.6 0 (.4 5 7 )
1 .6 5 ( .0 6 5 ) 1 1.4 0 (.4 4 9 ) 2 4 .3 0 (.95 7 )
15 .42 ( .6 09 )
2 3 .9 0 (.94 1 )
15 .22 ( .6 01 )
TRL
1 .7 5 ( .0 69 )
1 0 .9 0 (.4 2 9) 1 .2 5 ( .0 49 )
1 0 .7 0 (.4 2 1) 4 .7 2 (.1 3 6 )
1 6 .10 (.6 3 4 ) 4 .5 2 (.1 7 8 )
1 5 .90 (.6 2 6 )

F E E D D IR E C T IO N

1 3.50 ( .5 32 ) 27 .4 0 ( 1.0 79 )
1 2.80 ( .5 04 ) 23 .9 0 ( .94 1)

3 3 0.00 6 0.00 (2 .3 62)

( 14 .1 7 3) M IN .
M AX .

30 .4 0 (1.19 7)
N O T ES : M A X.
1. C O MF O R M S T O EIA-4 18 . 2 6 .4 0 ( 1.03 9 ) 4
2. C O N TR O LL IN G D IM EN S IO N : MIL LIM ET ER . 2 4 .4 0 ( .9 61 )
3. D IM EN S IO N M EA SU R ED @ H U B.
3
4. IN C LU D E S F LAN G E D IST O R T IO N @ O U TER ED G E.

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IRG4BC30KD-S
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
U When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

D2Pak Package Outline

1 0 .5 4 (.4 1 5 ) -B - 1 0 .1 6 (.4 0 0 )
1 0 .2 9 (.4 0 5 ) 4 .6 9 (.1 8 5 ) REF .
1 .4 0 (.0 55 ) 4 .2 0 (.1 6 5 )
-A - 1 .3 2 (.0 5 2 )
M A X.
1 .2 2 (.0 4 8 )
2
6 .4 7 (.2 5 5 )
6 .1 8 (.2 4 3 )

1 .7 8 (.0 7 0 ) 1 5 .4 9 (.6 1 0 ) 2 .7 9 (.1 1 0 )

1 .2 7 (.0 5 0 ) 1 3 1 4 .7 3 (.5 8 0 ) 2 .2 9 (.0 9 0 )

5 .2 8 (.2 0 8 ) 2 .6 1 (.1 0 3 )
4 .7 8 (.1 8 8 ) 2 .3 2 (.0 9 1 )

8 .8 9 (.3 5 0 )
1 .4 0 (.0 5 5 ) 1 .3 9 (.0 5 5 ) REF.
3X
1 .1 4 (.0 4 5 ) 0 .9 3 (.0 3 7 ) 0 .5 5 (.0 2 2 ) 1 .1 4 (.0 4 5 )
3X 0 .4 6 (.0 1 8 )
0 .6 9 (.0 2 7 )
5 .0 8 (.2 0 0 ) 0 .2 5 (.0 1 0 ) M B A M M IN IM U M R E C O M M E N D E D F O O T P R IN T

1 1 .43 (.4 5 0 )

NOTES: L E A D A S S IG N M E N T S 8 .8 9 (.3 5 0 )
1 D IM E N S IO N S A F T E R S O L D E R D IP . 1 - GATE
2 - D R A IN 1 7 .7 8 (.7 0 0 )
2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
3 - SOURCE
3 C O N T R O L L IN G D IM E N S IO N : IN C H .
4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S .
3 .8 1 (.1 5 0 )

2 .5 4 (.1 0 0 )
2 .0 8 (.0 8 2 ) 2X
2X

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Data and specifications subject to change without notice. 10/00

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