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    2N2102 Silicon NPN Transistor General Purpose Amplifier and Switch TO 39 Type Package

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    Naelectronic UO
    1) The 2N2102 is a silicon NPN transistor in a TO-39 package for general purpose amplification and switching in military and industrial equipment. 2) It has maximum ratings of 120V collector-base voltage, 65V collector-emitter voltage, 1A collector current, and 175°C operating junction temperature. 3) Electrical characteristics include a DC current gain of 10-120, collector-emitter saturation voltage below 0.5V, and noise figure below 8dB.

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    2N2102 Silicon NPN Transistor General Purpose Amplifier and Switch TO 39 Type Package

    Uploaded by

    Naelectronic UO
    60 views2 pages
    1) The 2N2102 is a silicon NPN transistor in a TO-39 package for general purpose amplification and switching in military and industrial equipment. 2) It has maximum ratings of 120V collector-base voltage, 65V collector-emitter voltage, 1A collector current, and 175°C operating junction temperature. 3) Electrical characteristics include a DC current gain of 10-120, collector-emitter saturation voltage below 0.5V, and noise figure below 8dB.

    Original Description:

    2N2102 transistor npn datasheet

    Original Title

    2N2102

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    1) The 2N2102 is a silicon NPN transistor in a TO-39 package for general purpose amplification and switching in military and industrial equipment. 2) It has maximum ratings of 120V collector-base voltage, 65V collector-emitter voltage, 1A collector current, and 175°C operating junction temperature. 3) Electrical characteristics include a DC current gain of 10-120, collector-emitter saturation voltage below 0.5V, and noise figure below 8dB.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    60 views2 pages

    2N2102 Silicon NPN Transistor General Purpose Amplifier and Switch TO 39 Type Package

    Uploaded by

    Naelectronic UO
    1) The 2N2102 is a silicon NPN transistor in a TO-39 package for general purpose amplification and switching in military and industrial equipment. 2) It has maximum ratings of 120V collector-base voltage, 65V collector-emitter voltage, 1A collector current, and 175°C operating junction temperature. 3) Electrical characteristics include a DC current gain of 10-120, collector-emitter saturation voltage below 0.5V, and noise figure below 8dB.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N2102

    Silicon NPN Transistor


    General Purpose Amplifier and Switch
    TO−39 Type Package
    Description:
    The 2N2102 is a silicon NPN transistor in a TO39 type package intended for a wide variety of small−
    signal and medium power applications in military and industrial equipment.

    Absolute Maximum Ratings:


    Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
    Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
    Collector−Emitter Voltage (RBE 10), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
    Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
    Total Device Dissipation, PD
    TA  +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
    TC  +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +175C
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30C/W
    Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C/W

    Electrical Characteristics: (TC = +25C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector Cutoff Current ICBO VCB = 60V − − 2 nA
    TC = +150C − − 2 A
    Emitter Cutoff Current IEBO VBE = 5V − − 5 nA
    Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100A, IE = 0 120 − − V
    Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 1 65 − − V
    Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 1 − − 0.5 V
    Base−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA, Note 1 − − 1.1 V

    Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle  1%.


    Electrical Characteristics: (TC = +25C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    DC Current Gain hFE VCE = 10V, Note 1 IC = 10A 10 − −
    IC = 100A 20 − −
    IC = 10mA 35 − −
    IC = 150mA 40 − 120
    IC = 500mA 25 − −
    IC = 1A 10 − −
    High Frequency Current Gain hfe IC = 50mA, VCE = 10V, f = 20MHz, − 6 −
    Note 1
    Noise Figure NF IC = 300A, VCE = 10V, f = 1KHz, − − 8 dB
    BW = 1Hz, Rg = 510
    Collector−Base Capacitance CCBO IE = 0 VCB = 10V, f = 1MHz − − 15 pF
    Emitter−Base Capacitance CEBO IC = 0 VEB = 500mV, f = 1MHz − − 80 pF

    Note 1. Pulse Test: Pulse Width + 300s, Duty Cycle  1%.

    .370 (9.39) Dia Max

    .355 (9.03) Dia Max

    .260
    (6.6)
    Max

    .500
    (12.7)
    Min

    .018 (0.45)

    Base
    Emitter Collector/Case

    45

    .031 (.793)

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