1.0 Features 2.0 Description: Digital PWM Current-Mode Controller For Quasi-Resonant Operation
1.0 Features 2.0 Description: Digital PWM Current-Mode Controller For Quasi-Resonant Operation
1.0 Features 2.0 Description: Digital PWM Current-Mode Controller For Quasi-Resonant Operation
N
VOUT
+
+
RTN
1 NC VCC 8
2 VSENSE OUTPUT 7
3 VIN ISENSE 6
4 SD GND 5
Optional U1
NTC iW1710
Thermistor
2 VSENSE OUTPUT 7
3 VIN ISENSE 6
4 SD GND 5
2 VSENSE Analog Input Auxiliary voltage sense (used for primary side regulation).
3 VIN Analog Input Rectified AC line average voltage sense.
External shutdown control. Connect to ground through a resistor if not used.
4 SD Analog Input
(see section 10.16)
5 GND Ground Ground.
6 ISENSE Analog Input Primary current sense (used for cycle-by-cycle peak current control and limit).
8 VCC Power Input Power supply for control logic and voltage sense for power-on reset circuitry.
Shutdown low voltage threshold VUVDC TA= 25°C, negative edge 201 221 243 mV
Nominal voltage threshold VSENSE(NOM) TA=25°C, negative edge 1.523 1.538 1.553 V
Output OVP threshold - 01 (Note 2) VSENSE(MAX) TA=25°C, negative edge 1.754 1.846 1.938 V
ICCQ CL = 330 pF,
Operating current 3.5 5 mA
VSENSE = 1.5 V
SD SECTION (Pin 4)
Notes:
Note 1. Adjust VCC above the start-up threshold before setting at 12 V.
Note 2. These parameters are not 100% tested, guaranteed by design and characterization.
Note 3. Operating frequency varies based on the line and load conditions, see Theory of Operation for more details.
6.0 12.0
3.0 11.8
0.0 11.6
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 -50 -25 0 25 50 75 100 125
VCC (V) Ambient Temperature (°C)
Figure 7.1 : VCC vs. VCC Supply Start-up Current Figure 7.2 : Start-Up Threshold vs. Temperature
% Deviation of Switching Frequency from Ideal
0.3 % 1.548
-0.3 % 1.538
-0.9 % 1.528
-1.5 % 1.518
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Ambient Temperature (°C) Ambient Temperature (°C)
Figure 7.3 : % Deviation of Switching Frequency to Figure 7.4 : Internal Reference vs. Temperature
Ideal Switching Frequency vs. Temperature
VIN 3 8 VCC
ADC
ZVin VIN_A
25 kΩ 0.2 V ~ 2.0 V
Gate
7 OUTPUT
VVMS Driver
Digital
Signal 60 kΩ
VSENSE 2 VFB Logic
Conditioning
Control
ISD
Detection Switch
+ 6 ISENSE
VOCP 1.1 V
–
+
SD 4
– DAC
VSD-TH
RSD
IPEAK +
– –
GND VIPK
5 0V~1V
Referring to the block diagram in Figure 8.1, the digital logic iWatt’s digital control scheme is specifically designed to
control block generates the switching on-time and off-time address the challenges and trade-offs of power conversion
information based on the line voltage and the output voltage design. This innovative technology is ideal for balancing new
feedback signal and provides commands to dynamically regulatory requirements for green mode operation with more
control the external MOSFET current. The system loop is practical design considerations such as lowest possible cost,
compensated internally by a digital error amplifier. Adequate smallest size and highest performance output control.
system phase and gain margin are guaranteed by design
and no external analog components are required for loop
compensation. The iW1710 uses an advanced digital
9.1 Pin Detail If at any time the VCC voltage drops below VCC(UVL) threshold
then all the digital logic is reset. At this time VIN switch turns
Pin 2 – VSENSE off so that the VCC capacitor can be charged up again towards
Sense signal input from auxiliary winding. This provides the the start-up threshold.
secondary voltage feedback used for output regulation. Start-up
Sequencing
Pin 3 – VIN
Sense signal input from the rectified line voltage. VIN is used
VIN
for line regulation. The input line voltage is scaled down
using a resistor network. It is used for input undervoltage VCC(ST)
and overvoltage protection. This pin also provides the supply
current to the IC during start-up.
VCC
Pin 4 – SD
will shut-down when the VCC voltage is below 6 V (typical). A – VAUX
decoupling capacitor should be connected between the VCC TS(t) Q1
pin and GND.
VAUX = VO x
NAUX 9.5 Dynamic Load Transient
NS
There are three components that compose the voltage drop
during a load transient event.
The voltage at the load differs from the secondary voltage by The final drop in voltage is due to the time from when VSENSE
a diode drop and IR losses. The diode drop is a function of drops Vmin to when the next VSENSE signal appears. In the
current, as are IR losses. Thus, if the secondary voltage is worst case condition this is how much voltage drops during
always read at a constant secondary current, the difference the longest switching period.
between the output voltage and the secondary voltage will
be a fixed ΔV. Furthermore, if the voltage can be read when I OUT × TP (No load)
VDROP ( IC ) =
the secondary current is small; for example, at the knee of COUT
(9.8)
the auxiliary waveform (see Figure 9.3), then ΔV will also be
small. With the iW1710, ΔV can be ignored. A larger output capacitance in this case greatly reduces the
VDROP(IC).
Output Voltage
case when the power supply goes from light load to heavy
load prior to output voltage settling TPERIOD(CLAMP) substitutes
CC mode
TPERIOD(PFM) in equation 9.8.
across the drain and source of the MOSFET is at its lowest Output Current
point (see Figure 9.4). By switching at the lowest VDS, the Figure 9.5 : Power Envelope
switching loss will be minimized.
Gate
9.8 PFM Mode at Light Load
The iW1710 normally operates in a fixed frequency PWM or
critical discontinuous conduction mode when IOUT is greater
than approximately 10% of the specified maximum load
current. As the output load IOUT is reduced, the on-time tON
is decreased. At the moment that the load current drops
VDS below 10% of nominal, the controller transitions to Pulse
Frequency Modulation (PFM) mode. Thereafter, the on-
Figure 9.4 : Valley Mode Switching time will be modulated by the line voltage and the off-time
Turning on at the lowest VDS generates lowest dV/dt, thus is modulated by the load current. The device automatically
valley mode switching can also reduce EMI. To limit the returns to PWM mode when the load current increases.
switching frequency range, the iW1710 can skips valleys
(seen in the first cycle in Figure 9.4) when the switching 9.9 Variable Frequency Operation
frequency becomes too high. At each of the switching cycles, the falling edge of VSENSE
will be checked. If the falling edge of VSENSE is not detected,
iW1710 provides valley mode switching during constant the off-time will be extended until the falling edge of VSENSE
output current operation. So, the EMI and switching losses is detected. The maximum allowed transformer reset time
are still minimized during CC mode. This feature is superior is 120 µs. When the transformer reset time reaches this
to other quasi-resonant technologies which only support maximum reset time, the iW1710 immediately shuts off.
valley mode switching during constant voltage operation.
This is beneficial to applications, such as chargers, where 9.10 Internal Loop Compensation
the power supply mainly operates in CC mode.
The iW1710 incorporates an internal Digital Error Amplifier
9.7 Constant Current Operation with no requirement for external loop compensation. For a
typical power supply design, the loop stability is guaranteed
The constant current mode (CC mode) is useful in battery to provide at least 45 degrees of phase margin and –20dB
charging applications. During this mode of operation the of gain margin.
iW1710 will regulate the output current at a constant level
regardless of the output voltage, while avoiding continuous
conduction mode.
The input voltage is monitored by the VIN pin and the output
voltage is monitored by the VSENSE pin. If the voltage at these Detection Switch
pins exceed their respective undervoltage or overvoltage
thresholds the iW1710 shuts down immediately. However, Detection Switch:
When switch is low SD pin is connected to R SD
the IC remains biased which discharges the VCC supply. Once When switch is high SD pin is connected to a current source ISD
9.13 Shutdown
The shutdown (SD) pin in the iW1710 provides protection
against overtemperature (OTP) and additional overvoltage
(OVP) for the power supply.
No
10.3 Input Selection
Can you wind this transformer ?
Yes
VIN resistors are chosen primarily to scale down the input
voltage for the IC. The default scale factor for the input
Determine Current Sensing Resistor voltage in the IC is 0.0043 and the internal impedance of
this pin is ZIN (25 kW). Therefore, the VIN resistors should
Determine Input Bulk Capacitance
equate to:
Z IN
RVin
= − Z IN
Determine Output Capacitance 0.0043 (10.2)
pin to filter out any noise that may appear on the VIN signal. TPERIOD
This is especially important for line in surge conditions.
Figure 10.2 : VDS Timing
10.4 Turns Ratio
When both criterion are met then (VINTON)MAX can be
The maximum allowable turns ratio between the primary and
secondary winding is determined by the minimum detectable determined by equation 10.8.
−1
reset time of the transformer during PFM mode. (VIN ⋅ TON )max=
f SW (max op) ×
1
+
1
VINDC (min) NTR × VOUT
(VIN ⋅ TON )PFM 1
NTR (max) = where, f SW (max op) =
TP (QRmin) (10.8)
TRESET (min) × VOUT
(10.5)
Where VINDC(min) is the minimum input voltage across the bulk
Setting TRESET(min) at 1.5 μs,
capacitor. In order to avoid input undervoltage detection
119V ⋅ms during normal operation, VINDC(min) should be set above the
NTR (max)
= = 6.3
1.5ms × 12.5V
input undervoltage shutdown limit.
For this example a turns ratio of 6 is chosen. RVin + Z IN
(10.9)
VINDC (min) > ⋅ VUVDC
Z IN
Keep in mind in valley mode switching the higher the turns
ratio the lower the VDS turn-on voltage, which means less Assuming TRES is 2 μs then:
switch turn-on power loss. Also consider the voltage stress TP ( QR min ) > 10ms
on the MOSFET (VDS) is higher with an increase in turns
1
ratio. The voltage stress on the output diode is lower with TP' (QR min) > + 2ms= 11.1ms
110kHz
an increase in turns ratio respectively.
5.1M W + 25k W
10.5 Operating Maximum (VINTON) VINDC (min) >
25k W
× 0.369V =
76V
Maximum operating VINTON or (VINTON)MAX for valley mode To give some margin, we use 79 V for VINDC(min) in equation
switching is traditionally designed at full load and lowest 10.8,
input voltage. For the iW1710, two constraints (equation 72kHz and TP (QR min) =
Choosing, ƒ SW(max op) = 14ms
10.6 and 10.7) need to be satisfied so that indeed (VINTON)MAX −1
1
TP (QR min) > (10.6) Also, to provide enough margin for component values,
100kHz
usually:
1
TP' (QR min) > + TRES (10.7)
110kHz (VIN ⋅ TON )max < (VIN ⋅ TON )limit × 0.85 (10.10)
TRES is the VDS resonant period as shown in Figure 10.2.
(VIN ⋅ TON )max < 635V ⋅ms × 0.85
= 540V ⋅ms
TRES can be estimated to be
Rev. 2.5 iW1710 Page 12
November 27, 2012
iW1710
Digital PWM Current-Mode Controller for Quasi-Resonant Operation
Since we calculated 534 V·μs as our VIN·TON we have enough (VIN ⋅ TON )max
N PRI ≥
margin. Bmax × Ae
(10.13)
10.6 Magnetizing Inductance Where BMAX is maximum allowed flux density and Ae is the
A feature of the iW1710 is the lack of dependence on the core area. From the transformer core datasheet we find that
magnetizing inductance for the CC curve. for this example BMAX is 300 mT. For an EE19 core, Ae is
22.6 mm2.
Although the constant current limit does not depend on the
534V ⋅ms
magnetizing inductance, there are still restrictions on the N PRI ≥ 83.0T
=
magnetizing inductance. The maximum LM is limited by the 320mT × 20.1mm 2
amount of power that needs to come out of the transformer
For this example, we choose 90 primary turns.
in order for the power supply to regulate. This is given by:
LM (max) =
(VIN ⋅ TON )2max × f sw(max op) 10.8 Secondary Winding
2 × PXFMR (max)
(10.11) From the primary winding turns, we obtain the secondary
VOUT × I OUT
PXFMR (max) = winding.
hX
N PRI
N SEC =
NTR
Where ηX is the efficiency of the transformer, for this example (10.14)
we assume it’s 87 %.
Thus, in our example:
12.5V × 1.2 A
PXFMR (max) = 17.2W
=
0.87 90T
N=
SEC = 15T
2 6
( 534V ⋅ ms )
× 72kHz
=LM (max) = 0.597mH
2 × 17.2W
10.9 Bias Winding and VCC Capacitance
The minimum LM is limited by the maximum allowable peak VCC is the supply to the iW1710 and should be below 16 V.
primary current. VREG-TH corresponds to the maximum ISENSE The bias winding needs to ensure than VCC does not exceed
voltage. See section 10.11 to calculate RIsense. Therefore LM 16 V during normal operation.
is limited by:
N SEC (VCC + VFD )
2 × PXFMR ( max ) N BIAS =
LM (min) = VOUT
2 (10.15)
V
f SW (max op) × REG −TH
RIsense
(10.12) Set VCC at around 10 V
2 × 12.5V × 1.2 A 15T × 10.5V
=LM (min) = 0.486mH N BIAS
= = 12T
( )
2
72kHz × 1.0V 12.5V
1.08W
Choose a value for NBIAS to be close to this number, for this
For this example, we choose LM to be 0.577 mH. example we choose 12 turns.
If these limits do not give enough tolerance for LM, increasing The VCC capacitor (CVcc) stores the VCC charge during IC
(VINTON)max can raise the maximum limit on LM. Take care not operation and the controller checks this voltage and makes
to go above (VINTON)limit. Also, keep in mind that if equation sure it is within range before starting and operating. The
10.6 and 10.7 are not met then (VINTON)max does not occur at startup time is a function of how quickly this capacitor can
full load and lowest input voltage, thus some of the equations charge up.
here would be invalid.
CVCC × VCC ( ST )
tSTART −UP =
10.7 Primary Winding VINAC × 2
− I INST
RVin
In order to keep the transformer from saturation, the (10.16)
maximum flux density must not be exceeded. Therefore the
minimum primary winding must meet: 10.10 VSENSE Resistors and Winding
The output voltage regulation is mainly determined by the
feedback signal VSENSE.
Rev. 2.5 iW1710 Page 13
November 27, 2012
iW1710
Digital PWM Current-Mode Controller for Quasi-Resonant Operation
VSENSE VOUT _ PCB × K SENSE
= 6 × 0.5V
(10.17) RISNS = × 0.87 =1.08W
2 × 1.2 A
Where:
We recommend using ±1% tolerance resistors for RIsense.
RBVsns N
=K SENSE × Vsense
( RBVsns + RTVsns ) N SEC 10.12 Input Bulk Capacitor
(10.18)
The input bulk capacitor, CBULK is chosen to maintain enough
Internally, VSENSE is compared to a reference voltage input power to sustain constant output power even as the
VSENSE(nom). Where, VSENSE(nom) is 1.538 V. input voltage is dropping. In order for this to be true CBULK
VSENSE ( nom )
must be:
K SENSE =
VOUT _ PCB
(10.19)
2 × PIN × 0.25 + 21π × arcsin INDC (min)
V
2 ×VINAC (min)
1.538V CBULK =
K=
SENSE = 0.128
12.0V ( 2
2 × VINAC 2
(min) − VINDC (min) × f line ) (10.24)
VOUT (Cable ) × I OUT
From here we can find the ratio necessary for RBVsns and PIN =
RTVsns. For this example we set RTVsns to be 24 kΩ. Assuming hpower supply
we use the same winding for both VSENSE and VCC:
VINAC(min) is the minimum input voltage (rms) to be inputted
RBVSNS 12T into the power supply and fline is the lowest line frequency for
=0.128 ×
RBVSNS + 24k W 15T
the power supply (in this case 47 Hz). VINDC(min) is calculated
→ RBVSNS =4.57 k W from equation 10.9.
At this point the transformer design is complete. This would 12.5V × 1.2 A
= PIN = 20.8W
be a good time to confirm that this transformer is feasible to 0.72
build. 2 × 20.8W × 0.25 + 21π × arcsin
CBULK=
( 79V
2 ×85Vac )= 39mF
10.11 Current Sense Resistor ( 2 × (85V ac )2 − ( 79V )2 ) × 47 Hz
The ISENSE resistor determines the maximum current output
of the power supply. The output current of the power supply 10.13 Output Capacitance
is determined by: The output capacitance affects both the steady state ripple
TRESET and the dynamic response of the power supply.
1
I OUT = 2
× NTR × I PRI ( pk ) × × hX
TPERIOD
(10.20) Assuming an ideal capacitor where ESR (equivalent series
resistance) and ESL (equivalent series inductance) are
When the maximum current output is achieved the voltage negligible then:
seen on the ISENSE pin (VIsense) should reach its maximum.
Thus, at constant current limit: QOUT
COUT (Steady State) =
VOUT ( ripple)
VIsense (CC ) (10.25)
I PRI ( pk ) =
RIsense
(10.21) The output capacitor supplies the load current when the
secondary current is below the output current.
Substituting this into equation 10.20 we get:
( )
2
TPERIOD LM × I SEC ( pk ) − I OUT
VIsense
= (CC ) × KC QOUT =
TRESET 2
2 × NTR × h X × VOUT
(10.22) (10.26)
For iW1710 KC is 0.5 V, therefore RIsense depends on the The ISEC(pk) is:
maximum output current by;
(VIN ⋅ TON )MAX
NTR × KC I SEC ( pk )
= × NTR × h X
RIsense
= × hX LM
2 × I OUT (10.27)
(10.23)
So to keep VOUT(ripple) to be 100 mV,
From table 10.1 IOUT is given to be 1.2 A, therefore RIsense is:
VSnub ( pk )
(10.32)
I OUT ( HIGH ) × TP (No load)
COUT ( Dynamic ) =
VDynamic ( Drop ) − VDROP (Cable ) − VDROP ( sense )
(10.29) Using equation 10.32 solve for RSNUB. This gives a
conservative estimate of what CSNUB and RSNUB should be.
Where TP(No load) is the maximum period under no load
condition, given by equation 10.30: Included in the snubber network is also a resistor in series with
a diode. The diode directs current to the snubber capacitor
RPreload × (VIN ⋅ TON ) PFM
2
when the MOSFET is turned off; however there is some
=TP ( No load ) 2
× hNo load reverse current that goes through the diode immediately
2 × LM × VOUT
(10.30) after the MOSFET is turned back on. This reverse current
Assume that we want no more than 1.0 V drop on VOUT(PCB) occurs because there is a short period of time when the
during load transient from no load to 50% load and the diode still conducts after switching from forward biased to
efficiency of the power supply at no load (ηNo load) is 50% , reverse biased. This conduction distorts the falling edge of
then COUT(Dynamic) is: the VSENSE signal and affects the operation of the IC. So,
the resistor in series with the diode is there to diminish the
5.6k W × (119V ⋅ms )
2 reverse current that goes through the diode immediately
TP ( PFM=
) = 2
461ms after the MOSFET is turned on.
2 × 0.541mH × (12.5V )
1. Measure the difference between high line and low line For the other four cycles, the iW1710 connects the SD pin
constant current limit without filter components. to RSD to ground (see section 9.13). At the last cycle the
iW1710 observes the voltage on the SD pin and detects an
2. Find the curve that best matches this difference from OVP fault if the voltage is higher than VSD-TH, 1 V. In order to
Figure 11.1. not trigger OVP fault, assuming 0 V drop across the series
diode, RSD(ext) must meet:
3. Find the LM that matches the power supply, and find the
tRC. VOUT _ PCB RSD
× N AUX × < VSD −TH
N SEC RSD + RSD (ext )
4. Find RDly and CDly from equation 10.33 (10.35)
t RC = RDly × CDly
(10.33) where, RSD = 8.333 kΩ
10.16 SD Protection
The SD pin can be configured to provide three different Both OTP and OVP
types of protection: OTP protection, OVP protection and To find RSD1(ext) so that OVP can be detected, use equation
both OVP and OTP Protection. Figure 10.3 shows the three 10.35. To find RSD2(ext) in series with the NTC use equation
configurations plus the configuration for no OTP and OVP 10.34.
protection.
No OTP and OVP
If OTP and OVP from the SD pin are not needed, simply
RSD1(ext)
SD pin SD pin place a resistor, RSD(ext) to ground from the SD pin. Make
RNTC sure RSD(ext) meets equation 10.36 so OTP protection does
RNTC
RSD2(ext) not trip.
RSD(ext)
(optional)
OUTPUT
RSD (ext ) × I SD > VSD −TH
(10.36)
a) Overtemperature Protection only b) Overtemperature Protection
and Overvoltage Protection Note that this means OVP is not detected through the SD
pin; however, OVP from VSENSE pin is still active and the
SD pin
iW1710still shuts down if overvoltage condition is detected.
RSD(ext)
RSD(ext) Since for this example OTP and OVP are not necessary we
SD pin place a resistor from SD pin to ground and calculate its value
from equation 10.36.
c) Overvoltage Protection only d) No Overtemperature Protection
and no overvoltage protection RSD (ext ) > 1.2V 12k W
=
100mA
N
VOUT
+
+ 2)
RTN
1)
3)
1 NC VCC 8
2 VSENSE OUTPUT 7
3 VIN ISENSE 6
4 SD GND 5
Optional U1
NTC iW1710
Thermistor
120
∆IOUT (Note1)
50 mA
100 40 mA
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Magnetizing Inductance LM (mH)
N 470 µH
VOUT
10 kΩ
Cout + Rpreload
+ + Rsnub Csnub 680 µF 5.6 kΩ
Cbulk Cbulk Rvin 75 kΩ 1 nF RTN
10 µF 33 µF 2.7 MΩ
68 Ω
Rvin
2.4 MΩ
+ 4.7 Ω
470 pF Cvcc
4.7 µF
Rtvsns
24.0 kΩ 1 NC VCC 8 Rgate
22 Ω
2 VSENSE OUTPUT 7
Rbvsns 22 pF
4.57 kΩ 3 VIN ISENSE 6
Rdly (opt)
4 SD GND 5 1000 Ω
Cdly (opt) Risense
U1 33 pF 1.08 Ω
iW1710 (opt): optional
Rntc
20 kΩ
Note 1: ΔIOUT refers to the difference in constant current limit between 264 Vac and 90 Vac when no RDLY and CDLY are applied.
D Inches
Symbol
Millimeters
MIN MAX MIN MAX
A 0.053 0.069 1.35 1.75
8 5
A1 0.0040 0.010 0.10 0.25
E H
1 4 A2 0.049 0.059 1.25 1.50
B 0.014 0.019 0.35 0.49
C 0.007 0.010 0.19 0.25
e D 0.189 0.197 4.80 5.00
h x 45° E 0.150 0.157 3.80 4.00
A1 e 0.050 BSC 1.27 BSC
A2 A
H 0.228 0.244 5.80 6.20
α L
h 0.10 0.020 0.25 0.50
B SEATING
C L 0.016 0.049 0.4 1.25
COPLANARITY PLANE
0.10 (0.004) α 0° 8°
Controlling dimensions are in inches; millimeter dimensions are for reference only
Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall
not exceed 0.15 mm per end. Dimension E1 does not include interlead flash or protrusion. Interlead flash or
protrusion shall not exceed 0.25 mm per side.
The package top may be smaller than the package bottom. Dimensions D and E1 are determined at the
outermost extremes of the plastic bocy exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
Trademark Information
© 2012 iWatt Inc. All rights reserved. iWatt, BroadLED, EZ-EMI, Flickerless, Intelligent AC-DC and LED Power, and
PrimAccurate are trademarks of iWatt Inc. All other trademarks and registered trademarks are the property of their respective
owners.
Contact Information
Web: https://www.iwatt.com
E-mail: info@iwatt.com
Phone: +1 (408) 374-4200
Fax: +1 (408) 341-0455
iWatt Inc.
675 Campbell Technology Parkway, Suite 150
Campbell, CA 95008
This product is covered by the following patents: 6,385,059; 6,730,039; 6,862,198; 6,900,995; 6,956,750; 6,990,900; 7,443,700; 7,505,287;
7,589,983; 6,972,969; 7,724,547; 7,876,582; 7,880,447; 7,974,109; 8,018,743; 8,049,481. A full list of iWatt patents can be found at www.
iwatt.com.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property
or environmental damage (“Critical Applications”).
Inclusion of iWatt products in critical applications is understood to be fully at the risk of the customer. Questions concerning
potential risk applications should be directed to iWatt Inc.
iWatt semiconductors are typically used in power supplies in which high voltages are present during operation. High-voltage
safety precautions should be observed in design and operation to minimize the chance of injury.