1.

A thyristor (SCR) is a a) P-N-P device b) N-P-N View Answer

device c) P-N-P-N device d) P-N device
Answer: c 
Explanation: The device is in the reverse blocking state (3rd quadrant) & only 
View Answer the middle junction is forward biased whereas other two are reversed biased. 
8. For an SCR in the reverse blocking mode,
Answer: c 
Explanation: An SCR (silicon controlled rectifier) is a four layer p-n-p-n type 
(practically) a) leakage current does not flow b)
device.  leakage current flows from anode to cathode c)
2. Which terminal does not belong to the SCR? a) leakage current flows from cathode to anode d)
Anode b) Gate c) Base d) Cathode leakage current flows from gate to anode

View Answer View Answer

Answer: c  Answer: c 
Explanation: The SCR is having three terminals viz. anode, cathode and the  Explanation: In the reverse blocking mode, the gate current is zero & a reverse 
gate.  voltage is applied at the cathode-anode. 
3. An SCR is a a) four layer, four junction device b) 9. With the anode positive with respect to the
four layer, three junction device c) four layer, two cathode & the gate circuit open, the SCR is said to
junction device d) three layer, single junction device be in the a) reverse blocking mode b) reverse
conduction mode c) forward blocking mode d)
View Answer forward conduction mode

Answer: b 
View Answer
Explanation: SCR is a four layer p-n-p-n device which forms three p-n 
junctions. 
Answer: c 
4. Choose the false statement. a) SCR is a
Explanation: The SCR is in the forward blocking mode with its top and bottom 
bidirectional device b) SCR is a controlled device c) junctions forward biased and the middle junction reversed biased. 
In SCR the gate is the controlling terminal d) SCR 10. For an SCR in the forward blocking mode
are used for high-power applications (practically) a) leakage current does not flow b)
leakage current flows from anode to cathode c)
View Answer leakage current flows from cathode to anode d)
leakage current flows from gate to anode
Answer: a 
Explanation: It is a unidirectional device, current only flows from anode to 
cathode.  View Answer
5. In the SCR structure the gate terminal is located
Answer: b 
a) near the anode terminal b) near the cathode
Explanation: In the forward blocking mode, the gate current is zero & only the 
terminal c) in between the anode & cathode middle J2 junction is reversed biased. 
-----------------------------------------------------
terminal d) none of the mentioned
1. The forward break over voltage is the a)
View Answer anode-cathode voltage at which conduction starts
with gate signal applied b) anode-cathode voltage
Answer: b 
at which conduction starts with no gate signal
Explanation: The gate is located near the cathode, because it allows fast 
turning on of the device when the gate signal is applied by forward basing the  applied c) gate voltage at which conduction starts
second junction. 
with no anode-cathode voltage d) gate voltage at
6. The static V-I curve for the SCR is plotted for a) which conduction starts with anode-cathode voltage
Ia (anode current) vs Ig (gate current), Va (anode – applied
cathode voltage) as a parameter b) Ia vs Va with Ig
as a parameter c) Va vs Ig with Ia as a parameter d) View Answer
Ig vs Vg with Ia as a parameter
Answer: b 
View Answer Explanation: It is the forward voltage at which the middle junction breaks 
down without any gate signal and pushes the device into the conducting 
state. 
Answer: b 
2. For a forward conducting SCR device, as the
Explanation: The curve is plotted for Ia vs Va for different values of gate 
current Ig.  forward anode to cathode voltage is increased a)
7. If the cathode of an SCR is made positive with the device turns on at higher values of gate current
respect to the anode & no gate current is applied b) the device turns on at lower values of gate
then a) all the junctions are reversed biased b) all current c) the forward impedance of the device goes
the junctions are forward biased c) only the middle on increasing d) the forward impedance of the
junction is forward biased d) only the middle device goes on decreasing
junction is reversed biased
View Answer
Answer: b 
b) latching current c) switching current d) peak
Explanation: Higher the value of anode-cathode forward voltage, lower the 
gate requirements of the device. Also, the forward resistance of the device is  anode current
always constant as long as the junction temperature is constant. 
3. A thyristor can be bought from the forward View Answer
conduction mode to forward blocking mode by a)
the dv/dt triggering method b) applying a negative Answer: b 
Explanation: It is the minimum anode current value required to maintain the 
gate signal c) applying a positive gate signal d)
conduction of an SCR even though the gate signal is removed. It is a very 
applying a reverse voltage across anode-cathode important parameter when employing an SCR in any circuit. 
terminals 9. In the reverse blocking mode the middle junction
(J​2​) has the characteristics of that of a a) transistor
View Answer b) capacitor c) inductor d) none of the mentioned

Answer: d 
View Answer
Explanation: a) & c) are used to turn on the device, b) will damage the SCR. 
4. Usually the forward voltage triggering method is
Answer: b Explanation: It is like a capacitor, as the dv/dt voltage triggering 
not used to turn-on the SCR because a) it increases turns on the device. The charging current is given by, 
losses b) it causes noise production c) it may I​C​ = C​j​dV​a​/dt.
damage the junction & destroy the device d)
relatively it’s an inefficient method 10. ________ are semiconductor thyristor devices
which can be turned-on by light of appropriate
View Answer wavelengths. a) LGTOs b) LASERs c) MASERs d)
LASCRs
Answer: c 
Explanation: In forward voltage triggering the middle junction breaks down 
without any gate signal and pushes the device into the conducting state. This  View Answer
method can permanently damage the J2 junction and make the device 
useless. 
Answer: d 
5. Among the following, the most suitable method to Explanation: LASCR stands for light activated SCRs, which can be turned on in 
made to conduct by firing appropriate light pulses at its gate region. 
turn on the SCR device is the a) gate triggering -----------------------------------------------------
method b) dv/dt triggering method c) forward
voltage triggering method d) temperature triggering 1. During the transition time or turn-on time a) The
method forward anode voltage decreases from 90 % to 10
% & the anode current also decreases from 90 to
View Answer 10 % of the initial value b) The forward anode
voltage increases from 10 % to 90 % & the anode
Answer: a Explanation: d) & b) are unreliable methods, c) can permanently  current also increases from 10 % to 90 % of the
damage the SCR 
initial value c) The forward anode voltage
Gate triggering is simple, reliable & most efficient. decreases from 90 % to 10 % & the anode current
increases from 10 % to 90 % of the initial value d)
6. The forward break over voltage is maximum The forward anode voltage increases from 10 % to
when a) Gate current = ∞ b) Gate current = 0 c) 90 % & the anode current decreases from 90% to
Gate current = -∞ d) It is independent of gate 10% of the initial value
current
View Answer
View Answer
Answer: c 
Answer: b  Explanation: During the turn on time, the voltage across the SCR is going 
Explanation: Higher the value of anode-cathode forward voltage, lower the  down and the current through it is slowly rising as it is going into the 
gate requirements of the device.  conduction mode. 
7. For the SCR to remain in the ON (conducting) 2. For an SCR the total turn-on time consists of i)
state a) gate signal is continuously required b) no Delay time ii) Rise time and iii) Spread time During
continuous gate signal is required c) no forward the delay time the a) anode current flows only near
anode-cathode voltage is required d) negative gate the gate b) anode current rises from zero to very
signal is continuously required high value c) losses are maximum d) anode to
cathode voltage is zero
View Answer
View Answer
Answer: b 
Explanation: Unlike the transistor devices, once the SCR is turned on by the 
Answer: a 
gate terminal, the gate terminal losses its control over the device. 
Explanation: Initially for a fraction of a microsecond (delay time) after the gate 
8. The value of anode current required to maintain signal is applied the anode current only flows near the gate terminal where the 
the conduction of an SCR even though the gate gate current density is maximum, as the gate current takes some time to 
spread all over the cross section of the device. 
signal is removed is called as the a) holding current
3. The minimum value of anode current below equal to the thyristor turn-off time d) none of the
which it must fall to completely turn-off the device is above mentioned
called as the a) holding current value b) latching
current value c) switching current value d) peak View Answer
anode current value
Answer: a 
Explanation: If the thyristor turn off time is more than the circuit turn off time, 
View Answer the circuit will be turned off and the thyristor will keep conducting, which is 
not at all desirable. 
Answer: a  9. The gate characteristics of thyristor is a plot of
Explanation: The device will remain in the conducting state unless the anode 
current falls below the holding current value. 
4. For an SCR the total turn-on time consists of i) a) V​g​ on the X-axis & I​g​ on the Y-axis
Delay time ii) Rise time and iii) Spread time During
the rise time the a) anode current flows only near b) I​g​ on the X-axis & V​g​ on the Y-axis
the gate b) anode current rises from zero to very
high value c) losses are maximum d) anode to c) V​a​ on the X-axis & I​g​ on the Y-axis
cathode voltage is zero
d) I​g​ on the X-axis & V​a​ on the Y-axis
View Answer
View Answer
Answer: c 
Explanation: The losses are maximum during the rise time because both Ia &  Answer: b 
Va are high.  Explanation: It is the gate current versus the gate voltage plot and gives the 
5. The latching current is _________ than the minimum and maximum values of gate parameters. 

holding current a) lower b) higher c) same as d) 10. The area under the curve of the gate
negative of characteristics of thyristor gives the a) total average
gate current b) total average gate voltage c) total
View Answer average gate impedance d) total average gate
power dissipation
Answer: b 
Explanation: The latching current is the value of current on which the device  View Answer
will remain in the on state even after removal of the gate signal. Whereas, the 
holding current is the threshold above which the device will work. 
Answer: d 
6. For an SCR the total turn-on time consists of i) Explanation: As the gate characteristics is a plot of Ig vs Vg consisting of two 
Delay time ii) Rise time and the iii) Spread time The curves one for the maximum values & other for the minimum the area 
between them gives the total average gate power dissipation. (A very 
spread time interval depends upon a) the value of
important parameter in designing of the triggering circuits). 
gate current b) junction temperature c) area of the ------------------------------------------------------

cathode d) area of the anode

1. A tangent drawn from the Y-axis to the Pavg on
the gate characteristics gives the value of the a)
View Answer
maximum value of gate-source resistance b)
Answer: c  minimum value of gate-source resistance c)
Explanation: During the spread time the conduction starts spreading all over  maximum value of gate-source power d) minimum
the SCR cathode cross-section structure, which depends upon the structure of 
value of gate-source power
the gate & cathode. Higher the cathode area more is the time required for the 
charges to spread all over. 
7. For effective turning off of the SCR after the View Answer
anode current has reached zero value,
______________ a) chargers are injected by Answer: b 
Explanation: It gives the min gate to source resistance. 
applying reverse anode-cathode voltage b)
2. Higher the magnitude of the gate pulse a) lesser
chargers are removed by applying reverse
is the time required to inject the charges b) greater
anode-cathode voltage c) chargers are injected by
is the time required to inject the charges c) greater
applying gate signal d) chargers are removed by
is the value of anode current d) lesser is the value
applying gate signal
of anode current

View Answer
View Answer
Answer: b 
Answer: a 
Explanation: To enable the device to regain its reverse blocking capabilities, 
the stored charges in the junctions of the SCR must be removed.  Explanation: Lesser time is required to inject the charges & turn on the device 
with higher gate pulse magnitude. 
8. To avoid commutation failure a) circuit turn-off
3.The average gate power dissipation for an SCR is
time must be greater than the thyristor turn-off time
0.5 Watts the voltage applied to the gate is Vg = 10
b) circuit turn-off time must be lesser than the
thyristor turn-off time c) circuit turn-off time must be
V. What is the maximum value of current Ig for safe View Answer
operation? a) 0.25 A b) 10 A c) 0.05 A d) 0.1 A
Answer: a Explanation: Load line is nothing but Rs Es = 16V Vg.Ig = 0.5 Rs = 
128 
View Answer
We have Es = Ig x Rs + Vg.
Answer: c 
Explanation: Vg.Ig = 0.5 W, the power dissipation mustn’t exceed the average  8. From the two transistor (T1 & T2) analogy of
power dissipation. 
SCR, the total anode current of SCR is
4. For an SCR, the gate-cathode characteristic has ___________ in the equivalent circuit. a) the sum of
a slop of 130. The gate power dissipation is 0.5 both the base currents b) the sum of both the
watts. Find Ig a) 0.62 A b) 620 mA c) 62 mA d) 6.2 collector current c) the sum of base current of T1 &
mA collector current of T2 d) the sum of base current of
T2 & collector current of T1
View Answer
View Answer
Answer: c Explanation: Vg/Ig = 130 .. (given) Vg.Ig = 0.5 watts .. (given) 
use both the given data & find the gate current.
Answer: b 
Explanation: The sum of both the collector currents of T1 and T2 forms the 
total anode current of SCR. Refer the model. 
5. The two transistor model of the SCR can
obtained by a) bisecting the SCR vertically b) 9. Consider the two transistor analogy of SCR, if α​1
bisecting the SCR horizontally c) bisecting the & if α​2​ are the common-base current gains of both
SCRs top two & bottom two layers d) bisecting the the transistors then to turn-on the device
SCRs middle two layers
a) α​1​ + α​2​ should approach zero
View Answer
b) α​1​ x α​2​ should approach unity
Answer: d 
Explanation: The two transistor model consists of p-n-p and n-p-n transistors, 
c) α​1​ – α​2​ should approach zero
of which the middle n-p layer is common in both the transistors. 
6. Latching current for an SCR is 100 mA, DC
d) α​1​ + α​2​ should approach unity
source of 200 V is also connected from the SCR to
the L load. Compute the minimum width of the gate
pulse required to turn on the device. Take L = 0.2 View Answer
H. a) 50 μsec b) 100 μsec c) 150 μsec d) 200 μsec
Answer: d 
Explanation: To turn on the device sum of both the current gains should 
approach unity value. 
View Answer
10. Latching current for an SCR is 100 mA, a dc
Answer: b Explanation: For L load, E = L di/dt I = E/L t Therefore, 0.100 =  source of 200 V is also connected to the SCR which
200t/0.2 
is supplying an R-L load. Compute the minimum
T = 100 μsec. width of the gate pulse required to turn on the
device. Take L = 0.2 H & R = 20 ohm both in series.
7. The gate-source voltage is Es = 16 V and the a) 62.7 μsec b) 100.5 μsec c) 56.9 μsec d) 81 μsec
load line has a slope of 128 V/A. Calculate the gate
current for an average gate power dissipation of 0.5 View Answer
W.
Answer: b Explanation; E = Ri + L di/dt Solve the above D.E for I & substitute 
the above values. 
t = 100.503 μsec.

a)
62.5 mA b) 100.25 mA c) 56.4 mA d) 80.65 mA