Freescale Semiconductor Document Number: MHVIC910HR2

Technical Data Rev. 7, 8/2006

Replaced by MHVIC910HNR2. There are no form, fit or function changes with this part
replacement. N suffix indicates RoHS compliant part.

MHVIC910HR2
921 MHz - 960 MHz SiFET
RF Integrated Power Amplifier
The MHVIC910HR2 integrated circuit is designed for GSM base stations,
uses Freescale’s newest High Voltage (26 Volts) LDMOS IC technology, and 960 MHz, 10 W, 26 V
contains a three - stage amplifier. Target applications include macrocell (driver GSM CELLULAR
function) and microcell base stations (final stage). The device is in a PFP - 16 RF LDMOS INTEGRATED CIRCUIT
Power Flat Pack package which gives excellent thermal performances through
a solderable backside contact.
• Typical GSM Performance @ Full Frequency Band
ARCHIVE INFORMATION

ARCHIVE INFORMATION
(921 - 960 MHz), 26 Volts 16
Output Power — 40 dBm (CW) @ P1dB
Power Gain — 39 dB @ P1dB 1
Efficiency — 48% @ P1dB
CASE 978 - 03
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
PFP - 16
• Integrated ESD Protection
• Usable Frequency Range — 921 to 960 MHz
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit
Drain Supply Voltage VDD 28 Vdc
Gate Supply Voltage VGS 6 Vdc
RF Input Power Pin 5 dBm
Case Operating Temperature TC - 30 to + 85 °C
Storage Temperature Range Tstg - 65 to + 150 °C
Operating Channel Temperature Tch 150 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 2.9 °C/W

VD1 VD2 VD3 N.C. 1 16 N.C.

VD2 2 15 VD3/RFout
VD1 3 14 VD3/RFout
GND 4 13 VD3/RFout
RFin RFout RFin 5 12 VD3/RFout
VGATE1
6 11 VD3/RFout
VGATE2
7 10 N.C.
VGATE3
8 9 N.C.

(Top View)
VGATE1 VGATE2 VGATE3 Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram Figure 2. Pin Connections

© Freescale Semiconductor, Inc., 2006. All rights reserved. MHVIC910HR2

RF Device Data
Freescale Semiconductor 1
 Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 0 (Minimum)
Machine Model M2 (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020 3 240 °C

Table 5. Recommended Operating Ranges

Parameter Symbol Value Unit
Drain Supply Voltage VDD 26 Vdc
3rd Stage Quiescent Current IDQ3 150 mA
2nd Stage Quiescent Current IDQ2 50 mA
ARCHIVE INFORMATION

ARCHIVE INFORMATION
1st Stage Quiescent Current IDQ1 25 mA

Table 6. Electrical Characteristics (TA = 25°C matched to a 50 Ω system, unless otherwise noted)
VDD = 26 V, VGS set for IDQ3 = 150 mA, frequency range 921 - 960 MHz
Characteristic Symbol Min Typ Max Unit
Frequency Range fRF 921 — 960 MHz
Output Power @ 1 dB Compression Point P @ 1dB 39 40 — dBm
Power Gain @ P1dB G @ 1dB 38 39 — dB
Power Added Efficiency @ 1 dB Compression Point PAE @ 1dB 43 48 — %
Input Return Loss @ P1dB IRL @ 1dB — - 15 - 10 dB
Gain Flatness @ 40 dBm GF — .5 — dB
Variation (TC = - 30 to +85°C @ 40 dBm) GV — 5 — dB
Load Stability VSWR 10:1 — — —
(VDS = 24 V to 28 V, Pout = P1dB Down to 0 dBm,
All Phase Angles)
Ruggedness Ψ
(VDS = 26 V, Pout = 42 dBm, Load VSWR = 10:1, No Damage After Test
All Phase Angles)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

MHVIC910HR2
RF Device Data
2 Freescale Semiconductor
 1 16

VD2
2 15
C2
VD1 VD3
3 14
C3 C7 C8

4 13
RF RF
INPUT OUTPUT
5 12
C9
C6

6 11
R3
C4
VGS
7 10
ARCHIVE INFORMATION

ARCHIVE INFORMATION
R1
C5

8 9
R2 C1

C1, C2, C3, C4, C5, C8 1 μF Surface Mount Chip Capacitors J1, J2 Header (Break−away), HDR2X10STIMCSAFU
C6 4.7 pF AVX Chip Capacitor, ACCU−P (08051J4R7BBT) J3, J4 SMA Connector 2052−1618−02 (Threaded)
C7 47 pF AVX Chip Capacitor, ACCU−P (08055K470JBTTR) R1, R2, R3 100 Ω Chip Resistors (0402)
C9 33 pF AVX Chip Capacitor, ACCU−P (08053J330JBT) PCB Rogers 04350, 20 mils

Figure 3. 921 - 960 MHz Demo Board Schematic

MHVIC910HR2
RF Device Data
Freescale Semiconductor 3
 C8
VD1 VD2 VD3

C2
C3
C7

RF Input C6 C9 RF Output
ARCHIVE INFORMATION

ARCHIVE INFORMATION
C4 C5 C1

R3 R1 R2 MHVIC910HR2
900 MHz
VG1 VG2 VG3

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 4. 921 - 960 MHz Demo Board Component Layout

MHVIC910HR2
RF Device Data
4 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

43 50
TC = −30°C, IDQ3 = 150 mA

PAE, POWER ADDED EFFICIENCY (%)

TC = −30°C
42 45
+25°C
41 40 +85°C
G ps, POWER GAIN (dB)

TC = +25°C, IDQ3 = 150 mA

40 TC = +25°C, IDQ3 = 120 mA 35

39 30
TC = +25°C, IDQ3 = 110 mA
38 25
TC = +85°C, IDQ3 = 150 mA
37 20

36 15 IDQ3 = 150 mA
f = 960 MHz
35 10
0 2 4 6 8 10 12 0 2 4 6 8 10 12
ARCHIVE INFORMATION

ARCHIVE INFORMATION
Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS)

Figure 5. Power Gain versus Figure 6. Power Added Efficiency

Output Power versus Output Power
100 43

42 TC = −30°C, IDQ3 = 150 mA

Pout , OUTPUT POWER (WATTS)

41
Gps , POWER GAIN (dB)
+25°C 40 TC = +25°C, IDQ3 = 150 mA
10
39 TC = +25°C, IDQ3 = 120 mA
TC = −30°C
+85°C 38

37 TC = +85°C, IDQ3 = 150 mA

IDQ3 = 150 mA
f = 960 MHz
1 36
−15 −13 −11 −9 −7 −5 −3 −1 1 3 5 910 920 930 940 950 960 970
Pin, INPUT POWER (dBm) f, FREQUENCY (MHz)

Figure 7. Output Power versus Input Power Figure 8. Power Gain versus Frequency
Pout = 10 W
43 48
PAE, POWER ADDED EFFICIENCY (%)

TC = −30°C, IDQ3 = 150 mA 47.5

42
47
41 46.5 TC = +25°C, IDQ3 = 120 mA
Gps , POWER GAIN (dB)

TC = +25°C, IDQ3 = 150 mA 46

40
45.5
39
TC = +25°C, IDQ3 = 120 mA 45 TC = +25°C, IDQ3 = 150 mA
38 TC = +25°C, IDQ3 = 110 mA 44.5
44
37 TC = +85°C, IDQ3 = 150 mA
43.5 f = 960 MHz
36 43
910 920 930 940 950 960 970 910 920 930 940 950 960 970

f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 9. Power Gain versus Frequency Figure 10. Power Added Efficiency versus Frequency
Pout = P1dB Pout = 10 W

MHVIC910HR2
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

−12 −12
IRL, INPUT RETURN LOSS (dB)

IRL, INPUT RETURN LOSS (dB)

−14 −14

−16 −16 TC = +85°C

TC = +85°C

+25°C +25°C
−18 −18

−20 −20
−30°C −30°C
VDD = 26 Vdc VDD = 26 Vdc
−22 −22
910 920 930 940 950 960 970 910 920 930 940 950 960 970
ARCHIVE INFORMATION

ARCHIVE INFORMATION
f, FREQUENCY(MHz) f, FREQUENCY(MHz)

Figure 11. Input Return Loss versus Frequency Figure 12. Input Return Loss versus Frequency
Pout = 10 W Pout = P1dB

ACPR, ADJACENT CHANNEL POWER RATIO (dBc)

4.5 −50
EVM, ERROR VECTOR MAGNITUDE (%)

4 −55
Pout = 2.0 W (RMS)
3.5 Pout = 2.0 W (RMS)
−60
3
−65 0.5 W (RMS)
2.5
−70 0.1 W (RMS)
2
2.0 W (RMS)
−75
1.5 0.5 W (RMS)
0.5 W (RMS)
1 −80
0.1 W (RMS) = 400 kHz VDD = 26 Vdc
0.5 VDD = 26 Vdc −85
0.1 W (RMS) f = 880 MHz = 600 kHz f = 880 MHz
0 −90
140 150 160 170 180 190 200 140 150 160 170 180 190 200
IDQ, DRAIN QUIESCENT CURRENT (mA) IDQ, DRAIN QUIESCENT CURRENT (mA)

Figure 13. Error Vector Magnitude versus IDQ Total Figure 14. Adjacent Channel Power Ratio
versus IDQ Total

8 8

7 7
Pout , OUTPUT POWER (WATTS)

Pout , OUTPUT POWER (WATTS)

Pin = 1.0 mW Pin = 1.0 mW

6 6
0.8 mW 0.8 mW
5 5
0.6 mW 0.6 mW
4 4
0.4 mW 3 0.4 mW
3

2 2
IDQ total = 180 mA IDQ total = 170 mA
1 1
f = 880 MHz f = 880 MHz
0 0
16 17 18 19 20 21 22 23 24 25 26 16 17 18 19 20 21 22 23 24 25 26

VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS)

Figure 15. Output Power versus Supply Voltage Figure 16. Output Power versus Supply Voltage

MHVIC910HR2
RF Device Data
6 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

45 0 45 0
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

IMD, INTERMODULATION DISTORTION (dBc)

IMD, INTERMODULATION DISTORTION (dBc)

Gps
40 −5 40 Gps −5

IRL, INPUT RETURN LOSS (dB)

IRL, INPUT RETURN LOSS (dB)

35 −10 35 η −10
η
30 IRL −15 30 −15
IRL
25 VDD = 26 Vdc −20 25 −20
VDD = 26 Vdc
Pout = 10 W (PEP) Pout = 10 W (PEP)
20 IMD IDQ total = 200 mA −25 20 IDQ total = 200 mA −25
Two−Tone Measurement, 100 kHz Tone Spacing IMD
Two−Tone Measurement, 100 kHz Tone Spacing
15 −30 15 −30

10 −35 10 −35
820 840 860 880 900 920 940 960 820 840 860 880 900 920 940 960
ARCHIVE INFORMATION

ARCHIVE INFORMATION
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 17. Two - Tone Broadband Performance Figure 18. Two - Tone Broadband Performance

45 0 15 50
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

IMD, INTERMODULATION DISTORTION (dBc)
VDD = 26 Vdc
40 Gps −5 IRL, INPUT RETURN LOSS (dB)
Gps
12 40
Pout , OUTPUT POWER (WATTS)
Pout = 10 W (PEP), IDQ total = 200 mA
35 η −10 η
Pout
Two−Tone Measurement 9 30
30 −15
100 kHz Tone Spacing
IRL
25 −20 6 20

20 IMD −25
3 VDD = 26 Vdc 10
15 −30 IDQ total = 180 mA
f = 880 MHz
10 −35 0 0
820 840 860 880 900 920 940 960 0 0.5 1 1.5 2 2.5 3 3.5

f, FREQUENCY (MHz) Pin, INPUT POWER (mW)

Figure 19. Two - Tone Broadband Performance Figure 20. CW Performance @ 880 MHz

15 50 15 50
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)

Gps Gps
12 40 12 40
Pout , OUTPUT POWER (WATTS)

Pout , OUTPUT POWER (WATTS)

η η
Pout Pout
9 30 9 30

6 20 6 20

3 VDD = 26 Vdc 10 3 VDD = 26 Vdc 10

IDQ total = 170 mA IDQ total = 160 mA
f = 880 MHz f = 880 MHz
0 0 0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5

Pin, INPUT POWER (mW) Pin, INPUT POWER (mW)

Figure 21. CW Performance @ 880 MHz Figure 22. CW Performance @ 880 MHz

MHVIC910HR2
RF Device Data
Freescale Semiconductor 7
 TYPICAL CHARACTERISTICS

IMD, INTERMODULATION DISTORTION (dBc)

−25
VDD = 26 Vdc IDQ total = 140 mA
−30 f1 = 880.0 MHz, f2 = 880.1 MHz
Two−Tone Measurement 160 mA
−35 100 kHz Tone Spacing 170 mA

−40
180 mA
−45

−50

−55

−60
0.01 0.1 1 10
ARCHIVE INFORMATION

ARCHIVE INFORMATION
Pout, OUTPUT POWER (WATTS) PEP

Figure 23. Intermodulation Distortion versus

Output Power

MHVIC910HR2
RF Device Data
8 Freescale Semiconductor
 VDD = 26 V, IDQ = 225 mA, Pout = 40 dBm

f Zload
MHz Ω

900 7.81 + j4.61

920 7.27 + j4.90

940 6.77 + j5.23

960 6.31 + j5.59 f = 1000 MHz
Zo = 10 Ω
980 5.90 + j5.96
Zload
1000 5.53 + j6.36
ARCHIVE INFORMATION

ARCHIVE INFORMATION
Zload = Test circuit impedance as measured
from drain to ground.
f = 900 MHz

Device Output
Under Test Matching
Network

Z
load

Figure 24. Series Equivalent Load Impedance

MHVIC910HR2
RF Device Data
Freescale Semiconductor 9
 PACKAGE DIMENSIONS

h X 45 _ A
E2

1 16 NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
14 x e

Y14.5M, 1994.
D D1 3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
e/2

THE BOTTOM OF THE PARTING LINE.

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
8 9 PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
E1 B DETERMINED AT DATUM PLANE −H−.
BOTTOM VIEW 5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
8X E PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
bbb M C B S CONDITION.

ÉÉ
ÇÇ
b1 6. DATUMS −A− AND −B− TO BE DETERMINED AT
ARCHIVE INFORMATION

ARCHIVE INFORMATION
DATUM PLANE −H−.

ÇÇ
ÉÉ
Y
c c1 MILLIMETERS
A A2
DIM MIN MAX
A 2.000 2.300
b A1 0.025 0.100
DATUM A2 1.950 2.100
H PLANE aaa M C A S D 6.950 7.100
D1 4.372 5.180
C SEATING
PLANE E 8.850 9.150
SECT W - W E1 6.950 7.100
E2 4.372 5.180
L 0.466 0.720
L1 0.250 BSC
b 0.300 0.432
L1

b1 0.300 0.375
ccc C q W c 0.180 0.279
GAUGE c1 0.180 0.230
PLANE e 0.800 BSC
W h −−− 0.600
L A1 q 0_ 7_
aaa 0.200
bbb 0.200
1.000 ccc 0.100
0.039

DETAIL Y

CASE 978 - 03
ISSUE C
PFP- 16

MHVIC910HR2
RF Device Data
10 Freescale Semiconductor
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ARCHIVE INFORMATION

ARCHIVE INFORMATION
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MHVIC910HR2
RF DeviceNumber:
Document Data MHVIC910HR2
Rev. 7, 8/2006
Freescale Semiconductor 11