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KVR13S9K2/16: Memory Module Specifi Cations

This document provides specifications for the ValueRAM KVR13S9K2/16 16GB memory kit. The kit contains two 8GB DDR3-1333 memory modules with a CL of 9. Each module has 16 512M x 8-bit DDR3 components running at 1333Mb/sec. The modules operate at 1.5V with standard DDR3-1333 timing and have a maximum power of 2.46W per module.

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JULIÁN TRUJILLO
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46 views2 pages

KVR13S9K2/16: Memory Module Specifi Cations

This document provides specifications for the ValueRAM KVR13S9K2/16 16GB memory kit. The kit contains two 8GB DDR3-1333 memory modules with a CL of 9. Each module has 16 512M x 8-bit DDR3 components running at 1333Mb/sec. The modules operate at 1.5V with standard DDR3-1333 timing and have a maximum power of 2.46W per module.

Uploaded by

JULIÁN TRUJILLO
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Memory Module Specifications

KVR13S9K2/16
16GB (8GB 2Rx8 1G x 64-Bit x 2 pcs.)
PC3-10600 CL9 204-Pin SODIMM Kit

DESCRIPTION SPECIFICATIONS
ValueRAM's KVR13S9K2/16 is a kit of two 1G x 64-bit (8GB) CL(IDD) 9 cycles
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory Row Cycle Time (tRCmin) 49.5ns (min.)
modules, based on sixteen 512M x 8-bit DDR3-1333 FBGA Refresh to Active/Refresh 260ns (min.)
components per module. Total kit capacity is 16GB. The SPDs Command Time (tRFCmin)
are programmed to JEDEC standard latency DDR3-1333 timing Row Active Time (tRASmin) 36ns (min.)
of 9-9-9 at 1.5V. Each 204-pin SODIMM uses gold contact Maximum Operating Power 2.460 W* (per module)
fingers. The electrical and mechanical specifications are as
UL Rating 94 V - 0
follows:
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
FEATURES
*Power will vary depending on the SDRAM used.
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V)

• 667MHz fCK for 1333Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with


starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ


pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C,


3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB: Height 1.18” (30mm), double sided component

Continued >>

Document No. VALUERAM1249-001.A00 07/31/12 Page 1


MODULE DIMENSIONS:

(units = millimeters)

Document No. VALUERAM1243-001.A00 Page 2

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