F20C20A thru F20C60A ®

F20C20A thru F20C60A Pb

Pb Free Plating Product
20.0 Ampere Dual Common Anode Fast Recovery Rectifier Diode

TO-220AB Unit : inch (mm)

Features .419(10.66) .196(5.00)
 Fast switching for high efficiency .387(9.85) .163(4.16)

 Low forward voltage drop .139(3.55)

MIN
.054(1.39)
.045(1.15)
 High current capability

.269(6.85)
.226(5.75)
 Low reverse leakage current

.624(15.87)
.548(13.93)
 High surge current capability
Application
 Automotive Inverters/Solar Inverters
 Plating Power Supply,SMPS and UPS

.50(12.7)MIN
 Car Audio Amplifiers and Sound Device Systems

.177(4.5)MAX
.038(0.96) .025(0.65)MAX
.019(0.50)

Mechanical Data
 Case: Heatsink TO-220AB .1(2.54) .1(2.54)

 Epoxy: UL 94V-0 rate flame retardant

 Terminals: Solderable per MIL-STD-202 method 208
 Polarity: As marked on diode body Case Case Case
 Mounting position: Any Negative Doubler
Positive
 Weight: 2.2 gram approximately Common Cathode Common Anode Tandem Polarity
Suffix "C" Suffix "A" Suffix "D"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.
o

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.
F20C20C F20C40C F20C60C
SYMBOL F20C20A F20C40A F20C60A UNIT
F20C20D F20C40D F20C60D
Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V

Maximum RMS Voltage VRMS 140 280 420 V

Maximum DC Blocking Voltage VDC 200 400 600 V

Maximum Average Forward Rectified

o IF(AV) 20.0 A
Current TC=125 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM 200 175 A
(JEDEC method)

Maximum Instantaneous Forward Voltage

VF 0.98 1.3 1.7 V
@ 10.0 A

Maximum DC Reverse Current @TJ=25 C

o
10.0 uA
o IR
At Rated DC Blocking Voltage @TJ=125 C 250 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 120 70 pF

Operating Junction and Storage -55 to +150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Rev.04/2014 Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 F20C20A thru F20C60A ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

20 200
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

175 (JEDEC Method)

16
CURRENT, AMPERES

150
F20C20A
10
125

AMPERES
8 100
F20C40A-F20C60A
75
6

50
4
60 Hz Resistive or 25
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
100 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

F20C20A
o
F20C40A TJ=125 C
100
MICROAMPERES

10
AMPERES

10
F20C60A
o
TJ=25 C
0.1
1

TJ=25 oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Rev.04/2014 Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/