BSP 762 T

Smart Power High-Side-Switch

Features Product Summary
• Overload protection Overvoltage protection Vbb(AZ) 41 V
• Current limitation Operating voltage Vbb(on) 5...34 V
• Short circuit protection On-state resistance RON 100 mΩ
• Thermal shutdown with restart Nominal load current IL(nom) 2 A
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current

Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.

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 BSP 762 T

Block Diagram

+ V bb

Voltage Overvoltage Current Gate

source protection limit protection
V Logic
Limit for OUT
Charge pump unclamped
Level shifter ind. loads Temperature
sensor
Rectifier
IN
Load
ESD Logic


GND miniPROFET

Signal GND Load GND

Pin Symbol Function

1 GND Logic ground
2 IN Input, activates the power switch in case of logic high signal
3 OUT Output to the load
4 NC not connected
5 Vbb Positive power supply voltage
6 Vbb Positive power supply voltage
7 Vbb Positive power supply voltage
8 Vbb Positive power supply voltage

Pin configuration

Top view

GND 1• 8 Vbb

IN 2 7 Vbb

OUT 3 6 Vbb

NC 4 5 Vbb

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 BSP 762 T

Maximum Ratings at Tj = 25°C, unless otherwise specified

Parameter Symbol Value Unit
Supply voltage Vbb 40 V
Supply voltage for full short circuit protection Vbb(SC) Vbb
Tj = -40...+150°C
Continuous input voltage VIN -10 ... +16
Load current (Short - circuit current, see page 5) IL self limited A
Current through input pin (DC) I IN ±5 mA
Operating temperature Tj -40 ...+150 °C
Storage temperature T stg -55 ... +150
Power dissipation 1) Ptot 1.5 W
Inductive load switch-off energy dissipation 1)2) EAS 870 mJ
single pulse, (see page 8)
Tj =150 °C, Vbb = 13.5 V, IL = 1 A
Load dump protection 2) VLoadDump3)= VA + VS VLoaddump V
RI=2Ω, td=400ms, VIN= low or high, VA=13,5V
RL = 13.5 Ω 60
Electrostatic discharge voltage (Human Body Model) VESD kV
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin ±1
all other pins ±5

Thermal Characteristics
Thermal resistance @ min. footprint Rth(JA) - 95 - K/W
Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 70 83

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2not subject to production test, specified by design
3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.

Page 3 2004-01-27
 BSP 762 T

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150°C, V bb = 13,5V, unless otherwise specified min. typ. max.
Load Switching Capabilities and Characteristics
On-state resistance RON mΩ
T j = 25 °C, I L = 2 A, V bb = 9...40 V - 70 100
T j = 150 °C - 140 200
Nominal load current; Device on PCB 1) IL(nom) 2 2.4 - A
T C = 85 °C, T j ≤ 150 °C
Turn-on time to 90% V OUT ton - 90 170 µs
RL = 47 Ω
Turn-off time to 10% V OUT toff - 90 230
RL = 47 Ω
Slew rate on 10 to 30% V OUT, dV/dton - 0.8 1.7 V/µs
RL = 47 Ω
Slew rate off 70 to 40% V OUT, -dV/dtoff - 0.8 1.7
RL = 47 Ω

Operating Parameters
Operating voltage Vbb(on) 5 - 34 V
Undervoltage shutdown of charge pump Vbb(under)
Tj = -40...+85 °C - - 4
Tj = 150 °C - - 5.5
Undervoltage restart of charge pump Vbb(u cp) - 4 5.5
Standby current Ibb(off) µA
Tj = -40...+85 °C, VIN = 0 V - - 10
Tj = 150°C2) , VIN = 0 V - - 15
Leakage output current (included in Ibb(off)) IL(off) - - 5
VIN = 0 V
Operating current IGND - 0.5 1.3 mA
VIN = 5 V

1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2higher current due temperature sensor

Page 4 2004-01-27
 BSP 762 T

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified min. typ. max.
Protection Functions1)
Initial peak short circuit current limit (pin 5 to 3) I L(SCp) A
Tj = -40 °C, Vbb = 20 V, tm = 150 µs - - 18
Tj = 25 °C - 10 -
Tj = 150 °C 4 - -
Repetitive short circuit current limit I L(SCr)
Tj = Tjt (see timing diagrams) - 7 -
Output clamp (inductive load switch off) VON(CL) 41 47 - V
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
Overvoltage protection 2) Vbb(AZ) 41 - -
Ibb = 4 mA
Thermal overload trip temperature T jt 150 - - °C
Thermal hysteresis ∆Tjt - 10 - K

Reverse Battery
Reverse battery 3) -Vbb - - 32 V
Drain-source diode voltage (VOUT > Vbb) -VON - 600 - mV
Tj = 150 °C

1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2 see also VON(CL) in circuit diagram on page 7
3Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).

Page 5 2004-01-27
 BSP 762 T

Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified min. typ. max.
Input
Input turn-on threshold voltage VIN(T+) - - 2.2 V
(see page 12)
Input turn-off threshold voltage VIN(T-) 0.8 - -
(see page 12)
Input threshold hysteresis ∆V IN(T) - 0.3 -
Off state input current (see page 12) I IN(off) 1 - 25 µA
VIN = 0.7 V
On state input current (see page 12) I IN(on) 3 - 25
VIN = 5 V
Input resistance (see page 7) RI 1.5 3.5 5 kΩ

Page 6 2004-01-27
 BSP 762 T

Terms Inductive and overvoltage output clamp

Ibb + V bb

V
Z
Vbb
V
ON
I IN IL VON
IN PROFET OUT
OUT

GND
V
IN GND
V IGND
bb VOUT
R
GND
VON clamped to 47V typ.

Input circuit (ESD protection) Overvoltage protection of logic part

R + V bb
I
IN
V
Z2

ESD- ZD I RI
I
I IN
L o gic
GND
V
Z1

The use of ESD zener diodes as voltage clamp GND

at DC conditions is not recommended R GN D

S ignal GND

Reverse battery protection

VZ1 =6.1V typ., VZ2 =Vbb(AZ) =47V typ.,
- V bb
RI=3.5 kΩ typ., RGND=150Ω
Logic
RI
IN
OUT
Power
Inverse
Diode

GND

R GND RL

Signal GND Power GND

RGND=150Ω, RI=3.5kΩ typ.,

Temperature protection is not active during
inverse current

Page 7 2004-01-27
 BSP 762 T

GND disconnect Vbb disconnect with charged inductive

load

Vbb
Vbb

high
IN OUT IN PROFET OUT
PROFET

GND GND
V V V
bb IN GND

V
bb

GND disconnect with GND pull up

Vbb Inductive Load switch-off energy

dissipation
IN PROFET OUT
E bb

E AS
GND
E Load
Vbb

V V
V IN GND IN PROFET OUT
bb
= L

{
EL
GND
ZL
ER
R
L

Energy stored in load inductance: EL = ½ * L * IL2

While demagnetizing load inductance,
the enérgy dissipated in PROFET is
EAS = Ebb + EL - ER = VON(CL) * iL(t) dt,
with an approximate solution for RL > 0Ω:

IL * L IL * R L
E AS = * ( V b b + | V O U T ( C L )| ) * ln (1 + )
2 * RL | V O U T ( C L )|

Page 8 2004-01-27
 BSP 762 T

Typ. transient thermal impedance Typ. transient thermal impedance

ZthJA=f(tp) @ 6cm 2 heatsink area Z thJA=f(tp) @ min. footprint
Parameter: D=tp/T Parameter: D=tp/T
2
10 10 2
D=0.5 D=0.5
K/W K/W
D=0.2 D=0.2

D=0.1 D=0.1
10 1 10 1
D=0.05 D=0.05

Z thJA
ZthJA

D=0.02 D=0.02

D=0.01
10 0 10 0
D=0.01

D=0
10 -1 10 -1
D=0

10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 4
10 10 10 10 10 10 10 10 10 10 s 10 10 10 10 10 10 10 10 10 10 10 s 10
tp tp

Typ. on-state resistance Typ. on-state resistance

RON = f(Tj) ; Vbb = 13,5V ; Vin = high RON = f(V bb); IL = 0.5A ; V in = high

160 200

mΩ mΩ

150°C
120 150
RON

RON

100 125

80 100

25°C
60 75

-40°C
40 50

20 25

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 0 5 10 15 20 25 30 V 40
Tj Vbb

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 BSP 762 T

Typ. turn on time Typ. turn off time

ton = f(Tj ); RL = 47Ω toff = f(Tj); RL = 47Ω

160 160
32V
µs µs
9V 9V

120 120
13.5V

toff
t on

100 100

32V
80 80

60 60

40 40

20 20

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj

Typ. slew rate on Typ. slew rate off

dV/dton = f(T j) ; RL = 47 Ω dV/dtoff = f(Tj); R L = 47 Ω

2 2

V/µs V/µs

1.6 1.6
dton

dtoff
-dV
dV

1.4 1.4

1.2 1.2

1 1

0.8 32V 0.8 32V

0.6 0.6

13.5V
0.4 0.4 13.5V
9V
9V
0.2 0.2

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj

Page 10 2004-01-27
 BSP 762 T

Typ. standby current Typ. leakage current

Ibb(off) = f(Tj ) ; Vbb = 32V ; VIN = low I L(off) = f(Tj) ; Vbb = 32V ; VIN = low

7 2

µA
µA
1.6

5
I bb(off)

1.4

I L(off)
1.2
4

3
0.8

2 0.6

0.4
1
0.2

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj

Typ. initial peak short circuit current limit Typ. initial short circuit shutdown time
IL(SCp) = f(Tj) ; Vbb = 20V toff(SC) = f(Tj,start) ; Vbb = 20V

14 3.5

A ms

2.5
toff(SC)

10
IL(SCp)

8 2

6 1.5

4 1

2 0.5

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 -40 -20 0 20 40 60 80 100 120 °C 160
Tj Tj

Page 11 2004-01-27
 BSP 762 T

Typ. input current Typ. input current

IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high I IN = f(VIN); V bb = 13.5V
VINlow ≤ 0,7V; VINhigh = 5V
14 200

µA
µA
150°C
160

10 140
on
IIN

IIN
120 -40...25°C
8

100

6 off 80

4 60

40
2
20

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 0 2 4 V 8
Tj VIN
Typ. input threshold voltage Typ. input threshold voltage
VIN(th) = f(Tj ) ; Vbb = 13,5V VIN(th) = f(V bb) ; Tj = 25°C

2 2
V V
on
on
1.6 1.6
V IN(th)

1.4
VIN(th)

1.4
off
1.2 1.2
off
1 1

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0 0
-40 -20 0 20 40 60 80 100 120 °C 160 5 10 15 20 25 V 35
Tj Vbb

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 BSP 762 T

Maximum allowable load inductance Maximum allowable inductive switch-off

for a single switch off energy, single pulse
L = f(IL); Tjstart =150°C, Vbb=13.5V, RL=0Ω EAS = f(I L); T jstart = 150°C, Vbb = 13,5V
3000 2500

mH
mJ

2000

EAS
1500
L

1500

1000
1000

500
500

0 0
0 0.5 1 1.5 A 2.5 0 0.5 1 1.5 A 2.5
IL IL

Page 13 2004-01-27
 BSP 762 T

Timing diagrams

Figure 1a: Vbb turn on: Figure 2b: Switching a lamp,

IN IN

V OUT
bb

I
V L
OUT

t
t

Figure 2a: Switching a resistive load, Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition

IN
IN

V OUT V
OUT
90%
t on d V /d to f f

d V /d to n t
o ff
10%

I
IL
L

t t

Page 14 2004-01-27
 BSP 762 T

Figure 3a: Turn on into short circuit,

Figure 5: Undervoltage restart of charge pump
shut down by overtemperature, restart by cooling
IN
Vo n

I
L

I
L(SCp)
V b b( u c p )
I
L(SCr) Vbb( under )
tm

Vbb
t off(SC) t

Heating up of the chip may require several milliseconds, depending

on external conditions.

Figure 4: Overtemperature:
Reset if Tj < Tjt

IN

V
OUT

T
J

Page 15 2004-01-27
 BSP 762 T

Package and ordering code

all dimensions in mm

Package: Ordering code:

P-DSO-8-6 Q67060-S7301-A2

Printed circuit board (FR4, 1.5mm thick, one

layer 70µm, 6cm2 active heatsink area ) as
a reference for max. power dissipation Ptot
Published by nominal load current IL(nom) and thermal
Infineon Technologies AG, resistance R thja
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your
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Due to technical requirements components may contain dangerous substances. For information on the
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Page 16 2004-01-27