Technical Data Sheet: PNP Switching Silicon Transistor
Technical Data Sheet: PNP Switching Silicon Transistor
Technical Data Sheet: PNP Switching Silicon Transistor
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DEVICES LEVELS
2N2904 2N2905 JAN
2N2904A 2N2905A JANTX
2N2904AL 2N2905AL JANTXV
JANS
DYNAMIC CHARACTERISTICS
Output Capacitance
Cobo pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 8.0
Iutput Capacitance
Cibo pF
VEB = 2.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz 30
SWITCHING CHARACTERISTICS
Turn-Off Time t
off 300 ηs
VCC = 30Vdc, IC = 150Adc, IB1 = IB2 = 15mA
PACKAGE DIMENSIONS
Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 6
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.70 19.05 7, 8, 12
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .100 2.54
Q .050 1.27 5
TL .029 .045 0.74 1.14 4
TW .028 .034 0.71 0.86 3
r .010 0.25 10
α 45° TP 45° TP 6
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and L minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.