Technical Data Sheet: PNP Switching Silicon Transistor

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

PNP SWITCHING SILICON TRANSISTOR


Qualified per MIL-PRF-19500/290

DEVICES LEVELS
2N2904 2N2905 JAN
2N2904A 2N2905A JANTX
2N2904AL 2N2905AL JANTXV
JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


2N2904 2N2904A, L
Parameters / Test Conditions Symbol Unit
2N2905 2N2905A, L
Collector-Emitter Voltage VCEO 40 60 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 600 mAdc
(1)
Total Power Dissipation @ TA = +25°C 0.8
PT W/°C
@ TC = +25°C (2) 3.0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
TO-39 (TO-205AD)
Thermal Resistance, Junction-to-Ambient RθJC 50 °C/W 2N2904, 2N2904A
2N2905, 2N2905A
NOTES:
1/ Derate linearly 3.43W/°C for TA > +25°C
2/ Derate linearly 17.2W/°C for TC > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit


OFF CHARACTERTICS
Collector-Emitter Breakdown Current
IC = 10mAdc 2N2904, 2N2905 V(BR)CEO 40 Vdc
2N2904A, 2N2905A / AL 60
Collector-Emitter Cutoff Voltage TO-5
VCE = 40Vdc 2N2904, 2N2905 2N2904AL, 2N2905AL
ICES 1.0 µAdc
VCE = 60Vdc 2N2904A, 2N2905A / AL
Collector-Base Cutoff Current
VCB = 50Vdc 2N2904, 2N2905 20 ηAdc
2N2904A, 2N2905A / AL 10 ηAdc
ICBO
VCB = 60Vdc All Types 10 µAdc

Emitter-Base Cutoff Current


VEB = 3.5Vdc IEBO 50 ηAdc
VEB = 5.0Vdc 10 µAdc

T4-LDS-0186 Rev. 1 (101764) Page 1 of 4


TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions Symbol Min. Max. Unit


ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc 2N2904 20
2N2905 35
2N2904A, 2N2904AL 40
2N2905A, 2N2905AL 75
IC = 1.0mAdc, VCE = 10Vdc 2N2904 25 175
2N2905 50 450
2N2904A, 2N2904AL 40 175
2N2905A, 2N2905AL 100 450

IC = 10mAdc, VCE = 10Vdc 2N2904 35


2N2905 hFE 75
2N2904A, 2N2904AL 40
2N2905A, 2N2905AL 100

IC = 150mAdc, VCE = 10Vdc 2N2904, 2N2904A / AL 40 120


2N2905, 2N2905A / AL 100 300

IC = 500mAdc, VCE = 10Vdc 2N2904 20


2N2905 30
2N2904A, 2N2904AL 40
2N2905A, 2N2905AL 50

Collector-Emitter Saturation Voltage


IC = 150mAdc, IB = 15mAdc 0.4
VCE(sat) Vdc
IC = 500mAdc, IB = 50mAdc 1.6

Base-Emitter Saturation Voltage


IC = 150mA, IB = 15mAdc 1.3
VBE(sat) Vdc
IC = 500mA, IB = 50mAdc 2.6

T4-LDS-0186 Rev. 1 (101764) Page 2 of 4


TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit


Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N2904 25
2N2905 50
2N2904A, 2N2905A hfe 40
2N2904AL, 2N2905AL 100
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 20Vdc, f = 100MHz |hfe| 2.0

Output Capacitance
Cobo pF
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz 8.0
Iutput Capacitance
Cibo pF
VEB = 2.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz 30

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit


Turn-On Time t
on 45 ηs
VCC = 30Vdc, IC = 150mAdc, IB1 = 15mAdc

Turn-Off Time t
off 300 ηs
VCC = 30Vdc, IC = 150Adc, IB1 = IB2 = 15mA

(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

T4-LDS-0186 Rev. 1 (101764) Page 3 of 4


TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com

PACKAGE DIMENSIONS

Dimensions
Symbol Inches Millimeters Note
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TP 5.08 TP 6
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.70 19.05 7, 8, 12
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .100 2.54
Q .050 1.27 5
TL .029 .045 0.74 1.14 4
TW .028 .034 0.71 0.86 3
r .010 0.25 10
α 45° TP 45° TP 6

NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and L minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions (similar to TO-39)

T4-LDS-0186 Rev. 1 (101764) Page 4 of 4

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