PR Elektronika Dasar

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PR Elektronika Dasar

1. Tinjau Rangkaian berikut: Hitung i dan vx pada rangkaian bila i(0) = 12 A

2. Dari rangkaian berikut ini, jika mula-mula saklar tertutup dan pada t = 0 saklar
dibuka, hitung arus i untuk t < 0 dan untuk t ≥ 0

3. Misalkan mula-mula saklar terbuka, dan pada t = 0 saklar ditutup.


Hitung v(t) untuk t > 0 dan pada t = 0,5 s

4. Jika saklar tertutup pada t = 0, hitung i(t) dan v(t) untuk semua waktu t.

5. Dari rangkaian arus bolak-balik (AC) berikut ini,


Hitunglah i(0) jika
a. ω = 1 rad/s
b. ω = 5 rad/s
c. ω = 10 rad/s
SEMIKONDUKTOR
A. Self-Test

1. The nucleus of a copper atom contains how many protons?


a. 1 b. 4 c. 18 d. 29

2. The net charge of a neutral copper atom is


a. 0 b. 11 c. 21 d. 14

3. Assume the valence electron is removed from a copper atom. The net charge of the atom
becomes a. 0 b. 11 c. 21 d. 14

4. The valence electron of a copper atom experiences what kind of attraction toward the nucleus? a.
None b. Weak c. Strong d. Impossible to say

5. How many valence electrons does a silicon atom have?


a. 0 b. 1 c. 2 d. 4

6. Which is the most widely used semiconductor?


a. Copper b. Germanium c. Silicon d. None of the above

7. How many protons does the nucleus of a silicon atom contain?


a. 4 b. 14 c. 29 d. 32

8. Silicon atoms combine into an orderly pattern called a


a. Covalent bond b. Crystal c. Semiconductor d. Valence orbit

9. An intrinsic semiconductor has some holes in it at room tempera ture. What causes these holes?
a. Doping b. Free electrons c. Thermal energy d. Valence electrons

10. When an electron is moved to a higher orbit level, its energy level with respect to the nucleus
a. Increases b. Decreases c. Remains the same d. Depends on the type of atom

11. The merging of a free electron and a hole is called


a. Covalent bonding b. Lifetime c. Recombination d. Thermal energy

12. At room temperature, an intrinsic silicon crystal acts approximately like


a. A battery b. A conductor c. An insulator d. A piece of copper wire

13. The amount of time between the creation of a hole and its disappearance is called
a. Doping b. Lifetime c. Recombination d. Valence

14. The valence electron of a conductor can also be called a


a. Bound electron b. Free electron c. Nucleus d. Proton

15. A conductor has how many types of flow?


a. 1 b. 2 c. 3 d. 4

16. A semiconductor has how many types of flow?


a. 1 b. 2 c. 3 d. 4
17. When a voltage is applied to a semiconductor, holes will flow
a. Away from the negative potential b. Toward the positive potential c. In the external circuit d. None
of the above

18. For semiconductor material, its valence orbit is saturated when it contains
a. One electron b. Equal (1) and (2) ions c. Four electrons d. Eight electrons

19. In an intrinsic semiconductor, the number of holes


a. Equals the number of free electrons b. Is greater than the number of free electrons c. Is less than
the number of free electrons d. None of the above

20. Absolute zero temperature equals


a. 2273°C b. 0°C c. 25°C d. 50°C

B. Problems

2-1 What is the net charge of a copper atom if it gains two electrons?

2-2 What is the net charge of a silicon atom if it gains three valence electrons?

2-3 Classify each of the following as conductor or semiconductor:


a. Germanium
b. Silver
c. Silicon
d. Gold

2-4 If a pure silicon crystal has 500,000 holes inside it, how many free electrons does it have?

2-6 Classify each of the following as n-type or p-type semiconductors:


a. Doped by acceptor atoms
b. Crystal with pentavalent impurities
c. Majority carriers are holes
d. Donor atoms were added to crystal
e. Minority carriers are free electrons
DIODA

A. Self-Test

1. When the graph of current versus voltage is a straight line, the device is referred to as
a. Active
b. Linear
c. Nonlinear
d. Passive

2. What kind of device is a resistor?


a. Unilateral
b. Linear
c. Nonlinear
d. Bipolar

3. What kind of a device is a diode?


a. Bilateral
b. Linear
c. Nonlinear
d. Unipolar

4. How is a nonconducting diode biased?


a. Forward
b. Inverse
c. Poorly
d. Reverse

5. When the diode current is large, the bias is


a. Forward
b. Inverse
c. Poor
d. Reverse

6. The knee voltage of a diode is approximately equal to the


a. Applied voltage
b. Barrier potential
c. Breakdown voltage
d. Forward voltage

7. The reverse current consists of minority-carrier current and


a. Avalanche current
b. Forward current
c. Surface-leakage current
d. Zener current

8. How much voltage is there across the second approximation of a silicon diode when it is forward
biased?
a. 0
b. 0.3 V
c. 0.7 V
d. 1 V
9. How much current is there through the second approximation of a silicon diode when it is reverse
biased?
a. 0
b. 1 mA
c. 300 mA
d. None of the above

10. How much forward diode voltage is there with the ideal diode approximation?
a. 0
b. 0.7 V
c. More than 0.7 V
d. 1 V

11. The bulk resistance of a 1N4001 is


a. 0
b. 0.23Ω
c. 10 Ω
d. 1 k Ω

12. If the bulk resistance is zero, the graph above the knee becomes
a. Horizontal
b. Vertical
c. Tilted at 45°
d. None of the above

13. The ideal diode is usually adequate when


a. Troubleshooting
b. Doing precise calculations
c. The source voltage is low
d. The load resistance is low

14. The second approximation works well when


a. Troubleshooting
b. Load resistance is high
c. Source voltage is high
d. All of the above

15. The only time you have to use the third approximation is when
a. Load resistance is low
b. Source voltage is high
c. Troubleshooting
d. None of the above

16. How much load current is there in Fig. 3-21 with the ideal diode?
a. 0
b. 11.3 mA
c. 12 mA
d. 25 mA
17. How much load current is there in Fig. 3-21 with the second approximation?
a. 0
b. 11.3 mA
c. 12 mA
d. 25 mA

18. How much load current is there in Fig. 3-21 with the third approximation?
a. 0
b. 11.3 mA
c. 12 mA
d. 25 mA

19. If the diode is open in Fig. 3-21, the load voltage is


a. 0
b. 11.3 V
c. 20 V
d. 215 V

20. If the resistor is ungrounded in Fig. 3-21, the voltage measured with a DMM between the top
of the resistor and ground is closest to
a. 0
b. 12 V
c. 20 V
d. -15 V

B. Problems

3-1 A diode is in series with 220 V. If the voltage across the resistor is 6 V, what is the current
through the diode?

3-2 A diode has a voltage of 0.7 V and a current of 100 mA. What is the diode power?

SEC. 3-2 THE IDEAL DIODE

3-4 In Fig. 3-22a, calculate the load current, load voltage, load power, diode power, and total power.

3-5 If the resistor is doubled in Fig. 3-22a, what is the load current?

3-6 In Fig. 3-22b, calculate the load current, load voltage, load power, diode power, and total power.
.
SEC. 3-3 THE SECOND APPROXIMATION

3-9 In Fig. 3-22a, calculate the load current, load voltage, load power, diode power, and total power.

3-10 If the resistor is doubled in Fig. 3-22a, what is the load current?

3-11 In Fig. 3-22b, calculate the load current, load voltage, load power, diode power, and total
power.

SEC. 3-4 THE THIRD APPROXIMATION

3-14 In Fig. 3-22a, calculate the load current, load voltage, load power, diode power, and total
power. (RB 5 0.23 V)

3-15 If the resistor is doubled in Fig. 3-22a, what is the load current? (RB 5 0.23 V)

3-16 In Fig. 3-22b, calculate the load current, load voltage, load power, diode power, and total
power. (RB 5 0.23 V)

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